CN107791664A - A kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode - Google Patents
A kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode Download PDFInfo
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- CN107791664A CN107791664A CN201610620433.6A CN201610620433A CN107791664A CN 107791664 A CN107791664 A CN 107791664A CN 201610620433 A CN201610620433 A CN 201610620433A CN 107791664 A CN107791664 A CN 107791664A
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- printing
- cell piece
- half tone
- single net
- grid line
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- 238000007639 printing Methods 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 230000000694 effects Effects 0.000 claims abstract description 17
- 230000032258 transport Effects 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 32
- 239000010703 silicon Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 230000002708 enhancing effect Effects 0.000 claims description 28
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 15
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007547 defect Effects 0.000 claims description 3
- 235000008216 herbs Nutrition 0.000 claims description 3
- 230000001788 irregular Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 7
- 230000008569 process Effects 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 238000007650 screen-printing Methods 0.000 abstract 1
- 238000007649 pad printing Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41F—PRINTING MACHINES OR PRESSES
- B41F15/00—Screen printers
- B41F15/14—Details
- B41F15/34—Screens, Frames; Holders therefor
- B41F15/36—Screens, Frames; Holders therefor flat
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
It is an object of the invention to provide single the net half tone equipment and technique and method of a kind of printing low production cost, the front electrode of the dereliction grid cell piece of high generated energy.Exported including workbench, scraper, single net half tone and conductive silver paste, workbench is provided with cell piece and transports platform, cell piece is placed on cell piece motion platform, single net half tone is arranged on cell piece and transported above platform, scraper and conductive silver paste outlet are arranged on the top of single net half tone, single net half tone is without main gate line half tone, it is provided with some thin grid line printings, both ends on the vertical line direction at thin grid line printing are provided with main grid end printing, the production technology of the present invention removes main gate line typography, is only retained in main grid end.The present invention is the screen printing process without the design of main gate line solar battery sheet, and it has very big application space, has the effect for promoting solar photovoltaic industry progress.
Description
Technical field
The invention belongs to technical field of solar, more particularly to a kind of production equipment and process of solar battery sheet, tool
Saying for body is a kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode
Background technology
Global fossil energy crisis has promoted the fast development of photovoltaic industry with environmental pollution.A few days ago, with crystal silicon electricity
Component based on the piece of pond occupies more than the 80% of global photovoltaic module market；Crystal-silicon battery slice is developed so far, its cost of manufacture
And generated energy turns into the main restricting factor of its development.In terms of cost of manufacture, material of the silicon materials in occupation of about 60-70%
Cost, the material cost of the dosage of silver paste in occupation of about 20-30%.The bold proposition of forefathers is to drop without main gate line technology
The most eager serious hope of this inexpensive target, and this technology also contributes to increase the effective illuminating area of cell piece, improves hair
Electricity.But some of which technological difficulties have contained the development without main grid, such as 1. Chinese patent《Silion cell without main gate line
Piece》[the patent No.：CN201820762U] in there is situations such as welding difficulty is big, welding is easy to fall off；2. Germany Schmid without
Main grid line technology butt welding machine requires too harsh, so as to improve equipment cost；3. Lin Jianwei《Connect without main grid, the high efficiency back of the body
Touch solar energy module, component and preparation technology》[the patent No.：The A of CN 104282788] there is whole battery sheet material and group
The technological innovation of part material, and technique and quality standard are very immature.However, the silicon of no main gate line more proposed by the present invention
Cell piece can balance the problem of reducing cost and guaranteed efficiency well.
The front electrode for being proposed to guarantee to print out a variety of no main gate line silicon cells well of this patent.
Cell piece printing screen plate this aspect, domestic and international many patents have some of oneself to illustrate viewpoint, but are substantially all and are concentrating
What routine was discussed has main gate line cell piece.For example, 1. Chinese patent《Photovoltaic cell printing module》[the patent No.：
CN202669148U] main gate line that prints out and the junction of secondary grid line it is rounded, therefore contact area increase between the two,
Contact resistance reduces, it is possible to increase photoelectric transformation efficiency.2. Chinese patent《Improved photovoltaic cell printing module》[patent
Number：CN202742802U] by aiding in grid line so that when a main gate line breaks down, connect the secondary grid of the failure main gate line
Line can be by aiding in grid line to be connected in another main gate line.3. Chinese patent《A kind of enhanced crystal silicon solar batteries
The cell piece of four main gate lines》[the patent No.：CN204792810U] when cell piece prints secondary grid line and broken, still may be used
Effectively to carry out the collection of electric current, the bad ratios of cell piece EL are greatly reduced.
The patent of many cell piece printing screen plates has all related to main gate line cell piece, without dereliction grid line cell piece
Half tone occur.Therefore the production equipment for the dereliction grid line cell piece that forms a complete production network also is badly in need of researching and developing.
The content of the invention
It is an object of the invention to provide a kind of printing low production cost, the front electricity of the dereliction grid cell piece of high generated energy
Single the net half tone equipment and technique of pole.
In order to achieve the above object, the technical scheme is that：A kind of printing dereliction grid line cell piece front electrode
Single net half tone equipment, including workbench, scraper, single net half tone and conductive silver paste outlet, workbench transport provided with cell piece
Platform, cell piece are placed on cell piece motion platform, and single net half tone is arranged on cell piece and transported above platform, scraper and conduction
Silver paste exports the top for being arranged on single net half tone, and single net half tone is without main gate line half tone, and it is provided with some thin grid line prints
At brush, the both ends on the vertical line direction at thin grid line printing are provided with main grid end printing.
Its both ends of dereliction grid cell piece that the present invention is directed to are provided with termination, and non-fully change existing production technology, only
The main gate line of center section is removed, the printing of main gate line is reduced, simultaneously because main gate line requires very high in itself, does not print main grid
Line can substantially reduce work quality requirement, while reduce the requirement of half tone production, and then reduce production cost.
Also include at enhancing pad printing, it is arranged between the printing of main grid end.
Also include enhancing electrical connection effect portion and print place, it is placed perpendicular on the straight line at thin grid line printing.
Shape at main grid end printing includes rectangle, ellipse, triangle, circle, trapezoidal and irregular strip.
Quantity at thin grid line printing is 50-110 roots.
Width at thin grid line printing is 60-120 microns.
Printing length best results at main grid end printing are 2-20mm, and optimal printing width best results are 0.2-
1.2mm。
Length at enhancing pad printing is 2-10 millimeters, and width is 0.2-1.2 millimeters, and its shape includes rectangle, circle
Shape, ellipse and triangle.
The width that enhancing electrical connection effect portion prints place is 20-120 microns, is highly 10-40 microns, its shape includes
Linear, rhombus, fold-line-shaped or rounding off are linear.
A kind of technique that dereliction grid cell piece is produced using the said equipment, is comprised the following steps：
A) crystalline silicon substrate selects
Preferential quality meets the crystalline silicon substrate of quality standard；Crystalline silicon substrate without open defect for example：Sliver, unfilled corner etc.；It is few
Number carrier lifetime is more than 20 microseconds.
B) crystalline silicon substrate surface wool manufacturing
Silicon chip surface making herbs into wool：Corrosion is carried out in silicon chip surface and forms scraggly shape, to increase silicon chip to sunshine
Capture rate；
C) PN junction is diffuseed to form
Diffuse to form PN junction：Phosphorus or boron doping are carried out to silicon chip so that cell piece both sides form P-type silicon and N-type silicon respectively；
D) surface coated with antireflection coatings
Silicon chip surface coated with antireflection film：One layer of silicon nitride film is deposited in silicon chip surface, to reduce the reflectivity of sunshine；
E) print electrode
Print electrode：Including printing aluminium back surface field, backplate, thin grid line and main grid line end respectively to silicon chip both sides
Head, enhancing pad and enhancing electrical connection effect portion.
When printing front electrode, the cell piece by a-d processing is put into cell piece first and transported on platform, such as accompanying drawing
Shown, conductive silver paste is in the left side of scraper (7), and as scraper moves to left movement.When scraper pushes, lead
Electric silver paste leaks through silk screen and is attached in crystalline silicon substrate, and the then motion of scraper blows Excess conductive silver paste off, Ran Houyou
Cell piece transports platform and transported, into next sintering circuit.
The present invention, which solves the typography of current battery piece front electrode and screen mesh printing plate, can not meet us without main grid
The production of line cell piece, it is therefore desirable to propose the printing screen plate of special dereliction grid line cell piece.
In addition, the main gate line of conventional batteries piece front electrode and thin grid line require higher to printing quality, therefore to silk
Net requires higher；But in our dereliction grid line cell piece, because without main gate line, only to the printing quality of thin grid line
It is required that it is somewhat higher, it is less demanding to some other printing positions, so silk screen manufacture difficulty is reduced, so as to reduce
The cost of manufacture of screen mesh printing plate.
The present invention is to be designed without main gate line solar battery sheet, and it has very big application space, has and promotes solar energy
The effect of photovoltaic industry progress.
Brief description of the drawings
Fig. 1 screen structure schematic diagrames of the present invention；
The structural representation of Fig. 2 embodiment of the present invention 2；
The structural representation of Fig. 3 embodiment of the present invention 3；
The structural representation of Fig. 4 embodiment of the present invention 4；
The structural representation of Fig. 5 embodiment of the present invention 5；
The structural representation of Fig. 6 embodiment of the present invention 6；
Fig. 7 present device cell piece production section structural representations；
Fig. 8 dereliction grid cell chip architecture schematic diagrames of the present invention；
Fig. 9 dereliction grid cell chip architecture schematic diagrames of the present invention；
Figure 10 dereliction grid cell chip architecture schematic diagrames of the present invention；
Figure 11 dereliction grid cell chip architecture schematic diagrames of the present invention；
Figure 12 dereliction grid cell chip architecture schematic diagrames of the present invention；
Figure 13 dereliction grid cell chip architecture schematic diagrames of the present invention；
In figure：At 1 main grid end printing；At 2 thin grid line printings；At 3 enhancing pad printings；4 enhancing electrical connection effects
Print place in fruit portion；5 single net half tones；6 scrapers；7 workbench；8 dereliction grid cell pieces.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples
Embodiment 1
As shown in Fig. 1, Fig. 7 and Fig. 8, a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode, including
Workbench 7, scraper 6, single net half tone 5 and conductive silver paste outlet, workbench 7 are provided with cell piece and transport platform, cell piece 8
It is placed on cell piece motion platform, single net half tone 5 is arranged on cell piece and transported above platform, and scraper 6 and conductive silver paste go out
Mouth is arranged on the top of single net half tone 5, and single net half tone 5 is without main gate line half tone, and it is provided with 2 at some thin grid line printings,
Both ends on the vertical line direction at thin grid line printing are provided with 1 at main grid end printing.
Also include 3 at enhancing pad printing, between it is arranged on 1 at main grid end printing, and it is thin in two
Between 2 at grid line printing.
Also include enhancing electrical connection effect portion and print place 4, it is placed perpendicular at thin grid line printing on 2 straight line.
1 shape includes rectangle, ellipse, triangle, circle, trapezoidal and irregular strip at main grid end printing
Shape.
2 quantity is 50-110 roots at thin grid line printing.
2 width is 60-120 microns at thin grid line printing.
1 printing length best results are 2-20mm at main grid end printing, and optimal printing width best results are
0.2-1.2mm。
The length for strengthening at pad printing 3 is 2-10 millimeters, is highly 0.2-1.2 millimeters, and its shape includes rectangle, circle
Shape, ellipse and triangle.
The width that enhancing electrical connection effect portion prints place 4 is 60-120 microns, is highly 10-40 microns, its shape includes
Linear, rhombus, fold-line-shaped or rounding off are linear.
A kind of technique that dereliction grid cell piece is produced using the said equipment, is comprised the following steps：
F) crystalline silicon substrate selects
Preferential quality meets the crystalline silicon substrate of quality standard；Crystalline silicon substrate without open defect for example：Sliver, unfilled corner etc.；It is few
Number carrier lifetime is more than 20 microseconds.
G) crystalline silicon substrate surface wool manufacturing
Silicon chip surface making herbs into wool：Corrosion is carried out in silicon chip surface and forms scraggly shape, to increase silicon chip to sunshine
Capture rate；
H) PN junction is diffuseed to form
Diffuse to form PN junction：Phosphorus or boron doping are carried out to silicon chip so that cell piece both sides form P-type silicon and N-type silicon respectively；
I) surface coated with antireflection coatings
Silicon chip surface coated with antireflection film：One layer of silicon nitride film is deposited in silicon chip surface, to reduce the reflectivity of sunshine；
J) print electrode
Print electrode：Including printing aluminium back surface field, backplate, thin grid line and main grid line end respectively to silicon chip both sides
Head, enhancing pad and enhancing electrical connection effect portion.
When printing front electrode, the cell piece by a-d processing is put into cell piece first and transported on platform, such as accompanying drawing
Shown, conductive silver paste is in the left side of scraper (7), and as scraper moves to left movement.It is conductive when scraper pushes
Silver paste leaks through silk screen and is attached in crystalline silicon substrate, and the then motion of scraper blows Excess conductive silver paste off, then by electricity
Pond piece transports platform and transported, into next sintering circuit.
Embodiment 2
As shown in Fig. 2 single net half tone 5 is also included 3 at enhancing pad printing, it is arranged on 1 at main grid end printing
Between.3 on the line at a pair of main grid end printings at enhancing pad printing.
Other are the same as embodiment 1
Embodiment 3
As shown in figure 3, single net half tone 5, which also includes enhancing electrical connection effect portion, prints place 4, it is placed perpendicular to thin grid line
At printing on 2 straight line.Place 4 is printed on the line at a pair of main grid end printings in enhancing electrical connection effect portion.
Embodiment 4
As shown in figure 4, single net half tone 5, which also includes enhancing electrical connection effect portion, prints place 4, it is placed perpendicular to thin grid line
At printing on 2 straight line.Print the side of line of the place 4 at a pair of main grid end printings in enhancing electrical connection effect portion.
Embodiment 5
As shown in figure 5, single net half tone 5 prints place 4 including at enhancing pad printing 3 and enhancing electrical connection effect portion, its
It is placed perpendicular at thin grid line printing on 2 straight line, on the line at a pair of main grid end printings.
Embodiment 6
As shown in fig. 6, single net half tone 5 prints place 4 including at enhancing pad printing 3 and enhancing electrical connection effect portion, its
It is placed perpendicular at thin grid line printing on 2 straight line, the side of the line at a pair of main grid end printings.
Certainly, the above is only the preferred embodiment invented, it is impossible to is considered as limiting the embodiment model to invention
Enclose.The present invention is also not limited to the example above, those skilled in the art institute in the essential scope of the present invention
The equivalent change made and improvement etc., all should belong to patent covering scope of the present invention.
Claims (10)
1. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode, including workbench (7), scraper (6), single net
Half tone (5) and conductive silver paste outlet, workbench (7) are provided with cell piece and transport platform, and cell piece (8) is placed on cell piece fortune
On moving platform, single net half tone (5) is arranged on cell piece and transported above platform, and scraper (6) and conductive silver paste outlet are arranged on list
The top of net half tone (5), it is characterised in that：Single net half tone (5) is without main gate line half tone, and it is provided with some thin grid line printings
Locate (2), the both ends on the vertical line direction at thin grid line printing are provided with main grid end printing (1).
2. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 1, its feature
It is：Also include at welding enhancing point printing (3), it is arranged at main grid end printing between (1).
3. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 1, its feature
It is：Single net half tone also includes enhancing electrical connection effect portion and prints place (4), and it is placed perpendicular to (2) at thin grid line printing
On straight line.
4. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 1, its feature
It is：The shape of (1) includes rectangle, ellipse, triangle, circle, trapezoidal and irregular strip at main grid end printing.
5. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 1, its feature
It is：The quantity of (2) is 50-110 roots at thin grid line printing.
6. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 1, its feature
It is：The width of (2) is 60-120 microns at thin grid line printing.
7. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 1, its feature
It is：The printing length best results of (1) are 2-20mm at main grid end printing, and optimal printing width best results are 0.2-
1.2mm。
8. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 2, its feature
It is：The length of (3) is 2-10 millimeters at welding enhancing point printing, and width is 0.2-1.2 millimeters, and its shape includes rectangle, circle
Shape, ellipse and triangle.
9. a kind of single net half tone equipment for printing dereliction grid line cell piece front electrode according to claim 3, its feature
It is：The width that enhancing electrical connection effect portion prints place (4) is 60-120 microns, is highly 10-40 microns, its shape includes straight
Linear, rhombus, fold-line-shaped or rounding off are linear.
A kind of 10. technique that dereliction grid cell piece is produced using the said equipment, it is characterised in that：Comprise the following steps：
A) crystalline silicon substrate selects
Preferential quality meets the crystalline silicon substrate of quality standard；Crystalline silicon substrate without open defect for example：Sliver, unfilled corner etc.；Minority carries
The sub- life-span is flowed more than 20 microseconds.
B) crystalline silicon substrate surface wool manufacturing
Silicon chip surface making herbs into wool：Corrosion is carried out in silicon chip surface and forms scraggly shape, and sunshine is caught with increasing silicon chip
Obtain rate；
C) PN junction is diffuseed to form
Diffuse to form PN junction：Phosphorus or boron doping are carried out to silicon chip so that cell piece both sides form P-type silicon and N-type silicon respectively；
D) surface coated with antireflection coatings
Silicon chip surface coated with antireflection film：One layer of silicon nitride film is deposited in silicon chip surface, to reduce the reflectivity of sunshine；
E) print electrode
Print electrode：Including printing aluminium back surface field, backplate, thin grid line and main grid end respectively to silicon chip both sides, increasing
Fierce contact and enhancing optical effect portion.
When printing front electrode, the cell piece by a-d processing is put into cell piece first and transported on platform, conductive silver paste exists
The left side of scraper (7), and as scraper moves to left movement.When scraper pushes, conductive silver paste leak through silk screen and
It is attached in crystalline silicon substrate, the then motion of scraper blows Excess conductive silver paste off, and then transporting platform by cell piece transports,
Into next sintering circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610620433.6A CN107791664A (en) | 2016-09-06 | 2016-09-06 | A kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610620433.6A CN107791664A (en) | 2016-09-06 | 2016-09-06 | A kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107791664A true CN107791664A (en) | 2018-03-13 |
Family
ID=61527656
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610620433.6A Pending CN107791664A (en) | 2016-09-06 | 2016-09-06 | A kind of single net half tone equipment and technique for printing dereliction grid cell piece front electrode |
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2016
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|---|---|---|---|---|
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| CN202293614U (en) * | 2011-09-28 | 2012-07-04 | 中节能太阳能科技（镇江）有限公司 | Positive silver screen printing plate of screen printing crystalline silicon solar cell |
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| CN105514183A (en) * | 2015-11-30 | 2016-04-20 | 黄河水电光伏产业技术有限公司 | Method for preparing front electrode of crystalline silicon solar cell |
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