CN107785485A - A kind of preparation method of MTJ - Google Patents
A kind of preparation method of MTJ Download PDFInfo
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- CN107785485A CN107785485A CN201610779667.5A CN201610779667A CN107785485A CN 107785485 A CN107785485 A CN 107785485A CN 201610779667 A CN201610779667 A CN 201610779667A CN 107785485 A CN107785485 A CN 107785485A
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- layer
- mtj
- preparation
- hard mask
- mtj according
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000009825 accumulation Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 15
- 239000001301 oxygen Substances 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims abstract description 13
- 238000002347 injection Methods 0.000 claims abstract description 9
- 239000007924 injection Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000003989 dielectric material Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 7
- 238000001459 lithography Methods 0.000 claims description 7
- 229910019236 CoFeB Inorganic materials 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 4
- 229910003321 CoFe Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 238000000206 photolithography Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 230000005415 magnetization Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910018936 CoPd Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- 229910015187 FePd Inorganic materials 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Chemical group 0.000 description 1
- 229910052751 metal Chemical group 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention discloses a kind of preparation method of MTJ, MTJ heaps are deposited on substrate, then prepare MgO transition zones and hard mask layer, hard mask quarter layer is subsequently patterned to stop on MgO transition zones, oxygen injection process is carried out, exposed accumulation layer is converted into the non-magnetic high dielectric constant material of high resistance after oxidizing and crystallizing process, removes unnecessary part with photolithography method, backfill and cmp planarizationization processing are carried out again so that dielectric constant diminishes.The processing speed of MTJ core piece is higher made of the present invention.
Description
Technical field
The invention belongs to magneto-resistor random access memory manufacturing technology field, especially designs a kind of preparation side of MTJ
Method.
Background technology
In recent years, the magneto-resistor random access memory (MRAM) based on MTJ (MTJ) principle is very likely to conduct
Solid-state nonvolatile storage application of future generation, is currently received significant attention.Magneto-resistor random access memory (MRAM) storage principle is
Realized based on MTJ (MTJ) change in resistance.MTJ is usually to be made up of trilaminate material, and centre is thin insulation
Tunnel layer, one layer is reference layer that the direction of magnetization is fixed in another two magnetosphere, and one layer is the variable accumulation layer of the direction of magnetization.When
When reference layer is parallel with the accumulation layer direction of magnetization, MTJ is low resistance state, counterlogic state 0；When reference layer and the accumulation layer direction of magnetization
When antiparallel, MTJ is high-impedance state, counterlogic state 1.
In MRAM preparation process, the Patternized technique of MTJ, which has become, most one of technique of challenge.Pass
The technology of system patterning small size, such as the technology such as ion beam bombardment, reactive ion beam etching (RIBE) can not meet the system of MTJ heaps
It is standby.Patterning techniques based on ion implanting mode are by it has been proposed that come applied in MRAM preparations.However, due to processing
The dielectric constant for the accumulation layer crossed is bigger, and the processing speed of chip can be than relatively low.In order to improve chip processing speed, it is necessary to solve
Certainly above mentioned problem.
The content of the invention
It is an object of the invention to provide a kind of preparation method of MTJ, etches away the accumulation layer after oxygen injection, adopts
Filled with dielectric material, dielectric constant diminishes, and solves the problems, such as chip processing speed than relatively low.
To achieve these goals, technical solution of the present invention is as follows：
A kind of preparation method of MTJ, the preparation method of the MTJ include：
Deposited seed layer, reference layer, tunnel layer, accumulation layer, transition zone and hard mask layer on substrate；
Make mask shape by lithography, and etch hard mask layer；
Using the hard mask layer after etching as hard mask, oxygen injection is carried out；
The high temperature anneal is carried out, and photoetching removes unnecessary part；
Dielectric material is backfilled, and carries out cmp planarization processing；
Surface deposition top electrode after planarization process, and make top electrode pattern by lithography.
The seed layer materials are Ta, Ru or Ta/Ru.
The storage layer material is CoFeB or CoFeB/CoFe double layer materials.
The tunnelling layer material is MgO, Al2O3 or HfO2.
The buffer layer material is the MgO of anoxic.
The dielectric material of the backfill is SiOx, low k material, or ultra low k material.
The hard mask material is the one or more in Ta, TaN, TiN or W.
The temperature of the high annealing is 300 degree~800 degree, 30 seconds~40 minutes time.
The present invention proposes a kind of preparation method of MTJ, and MTJ heaps are deposited on substrate, then prepare MgO
Transition zone and hard mask layer, it is subsequently patterned hard mask quarter layer and stops on MgO transition zones, carry out oxygen injection process, it is exposed
Accumulation layer is converted into the non-magnetic high dielectric constant material of high resistance after oxidizing and crystallizing process, is removed with photolithography method more
Remaining part point, carry out backfill and cmp planarizationization processing so that dielectric constant diminishes.The processing speed of MTJ core piece made of the present invention
Can be higher.
Brief description of the drawings
Fig. 1 is the preparation method flow chart of MTJ of the present invention；
Fig. 2 is MTJ of embodiment of the present invention section；
Fig. 3 A- Fig. 3 F are each stage MTJ schematic cross-section of the embodiment of the present invention.
Embodiment
Technical solution of the present invention is described in further details with reference to the accompanying drawings and examples, following examples are not formed
Limitation of the invention.
A kind of preparation method of MTJ of the present embodiment, as shown in figure 1, including：
Step S1, deposited seed layer, reference layer, tunnel layer, accumulation layer, transition zone and hard mask layer on substrate.
As shown in Fig. 2 the film layer that the present embodiment deposits on substrate includes Seed Layer 310, reference layer 320, tunnel layer
330th, accumulation layer 340, transition zone 350 and hard mask layer 360.Because each film layer upsets of MTJ do not influence the performance of tunnel knot, this reality
Example is applied only by taking Fig. 2 as an example to illustrate, but the method that MTJ upsets structure is equally applicable the present invention.
In general MRAM includes spin-torque transfering type and erect spin moment of torsion in field driving type, switch type, face
Transfering type.In order to illustrate goal of the invention, the present embodiment (pSTT- by taking the MRAM of erect spin moment of torsion transfering type as an example
MRAM), other kinds of MRAM is similar.
The MTJ heaps that Fig. 2 illustrates a kind of pSTT-MRAM are formed, including Seed Layer 310, reference layer 320, tunnel layer 330,
Accumulation layer 340, transition zone 350 and hard mask layer 360.
Seed Layer 310 is generally Ta, Ru, or Ta/Ru, Ta/Ru/Ta.Reference layer 320 be generally CoPt, CoPd, FePt,
FePd or Co/Pt, Co/Pd multilayer film.Tunnel layer 330 can directly use the direct sputtering sedimentation of MgO targets, Mg targets can also be used to sputter
Formed by aoxidizing, Al can also be used2O3、HfO2Deng material.It is double that the material of accumulation layer is generally CoFeB or CoFeB/CoFe
Tunic.The material of transition zone 350 is anoxic MgO, and the content of general oxygen is relatively low.Hard mask 360 is Ta, TaN, TiN, W or multilayer
Film.
Step S2, make mask shape by lithography, and etch hard mask layer.
After having deposited each film layer, the mask shape of hard mask etching is made by lithography, as shown in Figure 3A.Carry out hard mask layer 360
Etching, the etching stopping of hard mask 360 is on transition zone 350MgO, as shown in Figure 3 B.And for overturning structure, etch-stop
Stay on reference layer 320, repeat no more here.
Step S3, using the hard mask layer after etching as hard mask, oxygen injection is carried out.
The present embodiment transition zone 350, tunnel layer 330 are all MgO, are insulation in itself.By the ion implanting of this step,
Except the part below hard mask layer, parts of other exposures are all injected into oxygen, inject the depth of oxygen to tunnel layer 330.It is wherein sudden and violent
The accumulation layer 340 of dew has been injected into oxygen, and property changes, and is changed into non magnetic electrical insulator.So that transition zone 350,
The oxygen injection zone 390 of the overall composition insulation of accumulation layer 340, tunnel layer 330, as shown in Figure 3 C.
Step S4, the high temperature anneal is carried out, and photoetching removes redundance.
The present embodiment uses the high temperature anneal, and temperature is 300 degree~800 degree, and the time is 30 seconds~40 minutes.Through too high
After temperature annealing, oxygen and metal bonding, caused damage when repairing oxygen injection.After annealing, carry out photoetching and remove unnecessary portion
Point, as shown in Figure 3 D.I.e. in addition to the part that mask layer is blocked, the region 390 injected through peroxide is all etched away.
The method of the present embodiment is injected by oxygen, and exposed accumulation layer is converted into high resistance after oxidizing and crystallizing process
Non-magnetic high dielectric constant material, it is easy to be subsequently removed.
Step S5, dielectric material is backfilled, and carries out cmp planarization processing.
Using SiOx, low k material, or the dielectric material such as ultra low k material are backfilled to step S4 and etch the area come
Domain, and cmp planarization processing is carried out, as shown in FIGURE 3 E.Conventional material includes SiO2, SiNx or Al2O3。
The present embodiment is by backfilling dielectric material, and the dielectric constant of generally dielectric material is smaller, after eliminating oxygen injection
Influence to accumulation layer, it is possible to increase the processing speed of chip.
Step S6, the surface deposition top electrode after planarization process, and make top electrode pattern by lithography.
As illustrated in Figure 3 F, the crystal column surface that top electrode is deposited to after planarization, and top electrode figure is formed by photoetching treatment
Case.
The above embodiments are merely illustrative of the technical solutions of the present invention rather than is limited, without departing substantially from essence of the invention
In the case of refreshing and its essence, those skilled in the art, which work as, can make various corresponding changes and become according to the present invention
Shape, but these corresponding changes and deformation should all belong to the protection domain of appended claims of the invention.
Claims (8)
1. a kind of preparation method of MTJ, it is characterised in that the preparation method of the MTJ includes：
Deposited seed layer, reference layer, tunnel layer, accumulation layer, transition zone and hard mask layer on substrate；
Make mask shape by lithography, and etch hard mask layer；
Using the hard mask layer after etching as hard mask, oxygen injection is carried out；
The high temperature anneal is carried out, and photoetching removes unnecessary part；
Dielectric material is backfilled, and carries out cmp planarization processing；
Surface deposition top electrode after planarization process, and make top electrode pattern by lithography.
2. the preparation method of MTJ according to claim 1, it is characterised in that the seed layer materials are Ta,
Ru or Ta/Ru.
3. the preparation method of MTJ according to claim 1, it is characterised in that it is described storage layer material be
CoFeB or CoFeB/CoFe double layer materials.
4. the preparation method of MTJ according to claim 1, it is characterised in that the tunnelling layer material is MgO,
Al2O3 or HfO2.
5. the preparation method of MTJ according to claim 1, it is characterised in that the buffer layer material is anoxic
MgO.
6. the preparation method of MTJ according to claim 1, it is characterised in that the dielectric material of the backfill is
SiOx, low k material, or ultra low k material.
7. the preparation method of MTJ according to claim 1, it is characterised in that the hard mask material is Ta,
One or more in TaN, TiN or W.
8. the preparation method of MTJ according to claim 1, it is characterised in that the temperature of the high annealing is
300 degree~800 degree, 30 seconds~40 minutes time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610779667.5A CN107785485B (en) | 2016-08-31 | 2016-08-31 | Preparation method of magnetic tunnel junction |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610779667.5A CN107785485B (en) | 2016-08-31 | 2016-08-31 | Preparation method of magnetic tunnel junction |
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| CN107785485B CN107785485B (en) | 2021-06-01 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108232000A (en) * | 2016-12-21 | 2018-06-29 | 上海磁宇信息科技有限公司 | A kind of method for manufacturing microminiature magnetic random store-memory unit |
| CN108242502A (en) * | 2016-12-27 | 2018-07-03 | 上海磁宇信息科技有限公司 | A kind of method for preparing magnetic tunnel junction |
| EP4053925A3 (en) * | 2021-03-04 | 2023-04-19 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device |
| CN116997240A (en) * | 2023-09-19 | 2023-11-03 | 致真存储(北京)科技有限公司 | Magnetic tunnel junction process improvement method and memory |
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| CN101911327A (en) * | 2007-11-20 | 2010-12-08 | 高通股份有限公司 | Method of forming a magnetic tunnel junction structure |
| CN103123954A (en) * | 2011-11-21 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing magnetic tunnel junction device |
| CN104465983A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
-
2016
- 2016-08-31 CN CN201610779667.5A patent/CN107785485B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101911327A (en) * | 2007-11-20 | 2010-12-08 | 高通股份有限公司 | Method of forming a magnetic tunnel junction structure |
| CN103123954A (en) * | 2011-11-21 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing magnetic tunnel junction device |
| CN104465983A (en) * | 2013-09-17 | 2015-03-25 | 中芯国际集成电路制造(上海)有限公司 | Magnetic tunnel junction and formation method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108232000A (en) * | 2016-12-21 | 2018-06-29 | 上海磁宇信息科技有限公司 | A kind of method for manufacturing microminiature magnetic random store-memory unit |
| CN108242502A (en) * | 2016-12-27 | 2018-07-03 | 上海磁宇信息科技有限公司 | A kind of method for preparing magnetic tunnel junction |
| CN108242502B (en) * | 2016-12-27 | 2021-04-27 | 上海磁宇信息科技有限公司 | Method for preparing magnetic tunnel junction |
| EP4053925A3 (en) * | 2021-03-04 | 2023-04-19 | Samsung Electronics Co., Ltd. | Magnetic tunneling junction device, memory device including the same, and method of manufacturing the magnetic tunneling junction device |
| CN116997240A (en) * | 2023-09-19 | 2023-11-03 | 致真存储(北京)科技有限公司 | Magnetic tunnel junction process improvement method and memory |
| CN116997240B (en) * | 2023-09-19 | 2024-08-16 | 致真存储(北京)科技有限公司 | Magnetic tunnel junction process improvement method and memory |
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Effective date of registration: 20210512 Address after: 311121 room 311, building 1, No. 1500, Wenyi West Road, Yuhang District, Hangzhou City, Zhejiang Province Applicant after: CETHIK GROUP Co.,Ltd. Applicant after: HIKSTOR TECHNOLOGY Co.,Ltd. Address before: Room 311121 room 311, building 1, No. 1500, Wenyi West Road, Yuhang District, Hangzhou City, Zhejiang Province Applicant before: CETHIK GROUP Co.,Ltd. |
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