CN107785222A - A kind of device for avoiding inside cavity product from accumulating - Google Patents
A kind of device for avoiding inside cavity product from accumulating Download PDFInfo
- Publication number
- CN107785222A CN107785222A CN201710985195.3A CN201710985195A CN107785222A CN 107785222 A CN107785222 A CN 107785222A CN 201710985195 A CN201710985195 A CN 201710985195A CN 107785222 A CN107785222 A CN 107785222A
- Authority
- CN
- China
- Prior art keywords
- accumulating
- thermally conductive
- conductive sheet
- air inlet
- inside cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention proposes a kind of device for avoiding inside cavity product from accumulating, including：Reaction cavity；Air inlet and gas outlet, it is respectively arranged at the reaction cavity both ends；Cooling water pipeline, the air inlet and gas outlet chamber outer wall are respectively arranged at, wherein, the air inlet and gas outlet are respectively arranged with thermally conductive sheet at reaction cavity, so as to improve the temperature in the region, promote the cleaning efficiency of clean gas to be lifted.The device proposed by the present invention for avoiding inside cavity product from accumulating, the thermally conductive sheet of carbofrax material is placed at air inlet gas outlet, so as to improve the temperature in the region, promote hydrogen chloride cleaning efficiency to be lifted.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing field, and more particularly to one kind avoids inside cavity product from accumulating
Device.
Background technology
After certain thickness monocrystalline silicon thin film is grown in the inside cavity of application material monocrystalline silicon crystal growing equipment, it is necessary to
Reaction chamber is cleaned by cleaning to remove the product in reaction chamber, be otherwise easy for the formation on wafer and lack
Fall into.Prior art be to the cleaning method of reaction chamber with hydrogen chloride gas more than 1000 degrees Celsius at a high temperature of carry out longer when
Between cleaning (scavenging period is at least 30 minutes), so can ensure that in reaction chamber be particularly silicon wafer bearing disk on product quilt
Remove completely.
Existing equipment as shown in figure 1, cleaning procedure is cleaned using hydrogen chloride to cavity 10, clean-up performance and temperature into
Direct ratio, at the gas outlet 30 of cavity air inlet 20, because the influence of chamber outer wall cooling water 40, and hci gas flow is difficult to reach
Cleaning procedure temperature requirement.
The content of the invention
The present invention proposes a kind of device for avoiding inside cavity product from accumulating, and carborundum is placed at air inlet gas outlet
The thermally conductive sheet of material, so as to improve the temperature in the region, hydrogen chloride cleaning efficiency is promoted to be lifted.
In order to achieve the above object, the present invention proposes a kind of device for avoiding inside cavity product from accumulating, including：
Reaction cavity；
Air inlet and gas outlet, it is respectively arranged at the reaction cavity both ends；
Cooling water pipeline, the air inlet and gas outlet chamber outer wall are respectively arranged at,
Wherein, the air inlet and gas outlet are respectively arranged with thermally conductive sheet at reaction cavity, so as to improve the region
Temperature, promote the cleaning efficiency of clean gas to be lifted.
Further, the reaction cavity is application material monocrystalline silicon crystal growing equipment reaction cavity.
Further, the clean gas is hydrogen chloride gas.
Further, the thermally conductive sheet uses the thermally conductive sheet of carbofrax material.
Further, the thermal conductivity factor of the thermally conductive sheet is more than or equal to 50W/mK.
Further, the thermal conductivity factor of the thermally conductive sheet is 83.6W/mK.
The device proposed by the present invention for avoiding inside cavity product from accumulating, carborundum material is placed at air inlet gas outlet
The thermally conductive sheet of material, carbofrax material have good thermal conductivity, thermal conductivity factor 83.6W/mK, compared, other two in cavity
Silicon oxide components thermal conductivity factor is only 2.7W/mK, and thus thermally conductive sheet made of material can increase the temperature of air inlet gas outlet, make
Hydrogen chloride gas cleaning efficiency is improved, and frequency is safeguarded so as to reduce, and reduces maintenance cost, reduces equipment downtime.
Brief description of the drawings
Fig. 1 show monocrystalline silicon crystal growing equipment reaction cavity structural representation in the prior art.
Fig. 2 show the apparatus structure schematic diagram for avoiding inside cavity product from accumulating of present pre-ferred embodiments.
Fig. 3 show schematic top plan view of the thermally conductive sheet in original cavity.
Embodiment
The embodiment of the present invention is provided below in conjunction with accompanying drawing, but the invention is not restricted to following embodiment.Root
According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simple
The form of change and non-accurately ratio is used, be only used for conveniently, lucidly aiding in illustrating the purpose of the embodiment of the present invention.
Fig. 2 and Fig. 3 are refer to, Fig. 2 show the dress for avoiding inside cavity product from accumulating of present pre-ferred embodiments
Structural representation is put, Fig. 3 show schematic top plan view of the thermally conductive sheet in original cavity.The present invention proposes that one kind avoids chamber
The device of internal portion product accumulation, including：Reaction cavity 100；Air inlet 200 and gas outlet 300, it is respectively arranged at described anti-
Answer the both ends of cavity 100；Cooling water pipeline 400, the air inlet 200 and the chamber outer wall of gas outlet 300 are respectively arranged at, wherein,
The air inlet 200 and gas outlet 300 are respectively arranged with thermally conductive sheet 500 at reaction cavity 100, so as to improve the region
Temperature, the cleaning efficiency of clean gas is promoted to be lifted.
According to present pre-ferred embodiments, the reaction cavity 100 is application material monocrystalline silicon crystal growing equipment reaction cavity.
The clean gas is hydrogen chloride gas.
The thermally conductive sheet 500 uses the thermally conductive sheet of carbofrax material.Further, the thermal conductivity factor of the thermally conductive sheet is big
In equal to 50W/mK.According to present pre-ferred embodiments, the thermal conductivity factor of the thermally conductive sheet is 83.6W/mK.
In summary, the device proposed by the present invention for avoiding inside cavity product from accumulating, puts at air inlet gas outlet
The thermally conductive sheet of carbofrax material is put, carbofrax material has good thermal conductivity, thermal conductivity factor 83.6W/mK, compared, chamber
Internal other silica pieces conduct heat coefficients are only 2.7W/mK, and thus thermally conductive sheet made of material can increase air inlet outlet
The temperature of mouth, hydrogen chloride gas cleaning efficiency is improved, frequency is safeguarded so as to reduce, reduce maintenance cost, reduce equipment downtime
Time.
Although the present invention is disclosed above with preferred embodiment, so it is not limited to the present invention.Skill belonging to the present invention
Has usually intellectual in art field, without departing from the spirit and scope of the present invention, when can be used for a variety of modifications and variations.Cause
This, the scope of protection of the present invention is defined by those of the claims.
Claims (6)
- A kind of 1. device for avoiding inside cavity product from accumulating, it is characterised in that including：Reaction cavity；Air inlet and gas outlet, it is respectively arranged at the reaction cavity both ends；Cooling water pipeline, the air inlet and gas outlet chamber outer wall are respectively arranged at,Wherein, the air inlet and gas outlet are respectively arranged with thermally conductive sheet at reaction cavity, so as to improve the temperature in the region Degree, promotes the cleaning efficiency of clean gas to be lifted.
- 2. the device according to claim 1 for avoiding inside cavity product from accumulating, it is characterised in that the reaction cavity For application material monocrystalline silicon crystal growing equipment reaction cavity.
- 3. the device according to claim 1 for avoiding inside cavity product from accumulating, it is characterised in that the clean gas For hydrogen chloride gas.
- 4. the device according to claim 1 for avoiding inside cavity product from accumulating, it is characterised in that the thermally conductive sheet is adopted With the thermally conductive sheet of carbofrax material.
- 5. the device according to claim 1 for avoiding inside cavity product from accumulating, it is characterised in that the thermally conductive sheet Thermal conductivity factor is more than or equal to 50W/mK.
- 6. the device according to claim 5 for avoiding inside cavity product from accumulating, it is characterised in that the thermally conductive sheet Thermal conductivity factor is 83.6W/mK.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710985195.3A CN107785222A (en) | 2017-10-20 | 2017-10-20 | A kind of device for avoiding inside cavity product from accumulating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710985195.3A CN107785222A (en) | 2017-10-20 | 2017-10-20 | A kind of device for avoiding inside cavity product from accumulating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107785222A true CN107785222A (en) | 2018-03-09 |
Family
ID=61435106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710985195.3A Pending CN107785222A (en) | 2017-10-20 | 2017-10-20 | A kind of device for avoiding inside cavity product from accumulating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107785222A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
| US20020088548A1 (en) * | 2000-11-15 | 2002-07-11 | Jusung Engineering Co., Ltd. | Apparatus for generating inductively coupled plasma |
| TW526523B (en) * | 2000-11-21 | 2003-04-01 | Applied Materials Inc | Apparatus for cleaning a semiconductor process chamber |
| CN1543512A (en) * | 2002-03-29 | 2004-11-03 | Lg������ʽ���� | Surface treatment system and method |
| CN105765103A (en) * | 2013-12-02 | 2016-07-13 | 应用材料公司 | Methods and apparatus for in-situ cleaning of a process chamber |
-
2017
- 2017-10-20 CN CN201710985195.3A patent/CN107785222A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6286451B1 (en) * | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
| US20020088548A1 (en) * | 2000-11-15 | 2002-07-11 | Jusung Engineering Co., Ltd. | Apparatus for generating inductively coupled plasma |
| TW526523B (en) * | 2000-11-21 | 2003-04-01 | Applied Materials Inc | Apparatus for cleaning a semiconductor process chamber |
| CN1543512A (en) * | 2002-03-29 | 2004-11-03 | Lg������ʽ���� | Surface treatment system and method |
| CN105765103A (en) * | 2013-12-02 | 2016-07-13 | 应用材料公司 | Methods and apparatus for in-situ cleaning of a process chamber |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180309 |
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| RJ01 | Rejection of invention patent application after publication |