CN107785093A - A kind of isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear - Google Patents
A kind of isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear Download PDFInfo
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/06—Cells wherein radiation is applied to the junction of different semiconductor materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Abstract
The invention discloses a kind of isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear, including underlayer electrode, top electrodes, wide forbidden region semi-conductor nano tube/linear layer and isotopic radiation source；The wide forbidden region semi-conductor nano tube/linear layer includes multiple nano wires, the surface of the nano wire has schottky junction or hetero-junctions, the multiple nano wire is interlaced in wide forbidden region semi-conductor nano tube/linear layer, the wide forbidden region semi-conductor nano tube/linear layer is located between underlayer electrode and top electrodes, and the isotopic radiation source is in wide forbidden region semi-conductor nano tube/linear layer and/or between wide forbidden region semi-conductor nano tube/linear layer and top electrodes.The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention, the energy converslon materials used is semiconductor nanowires, the utilization rate of Radioactive Source Decay particle is improved to greatest extent, and multigroup battery unit multilayer stacking integration packaging is realized by mode in parallel or series, it can reach high unit volume power output.
Description
Technical field
The present invention relates to a kind of isotope battery, and in particular to a kind of disorderly arranged wide forbidden region semi-conductor nano tube/linear it is same
The plain battery in position.
Background technology
Since the last century 90's mid-term, microsensor, microactrator oneself obtained extensively in military and civilian field
Using.These miniature functions are required to high efficiency, low-power consumption, the power adapter of long-life.However, normal power supplies are (as changed
Learn battery, fuel cell and solar-energy photo-voltaic cell) generally need artificial periodic maintenance to change, and also volume is big, system complex, greatly
The big working life and suitable environment for constraining Micro-sensor system.
" nuclear power source " is the ideal source for solving micro sensing system power supply, it is contemplated that security and economy, nuclear power source
One form of which：Isotopic radiation can be considered as the candidate's energy for manufacturing micro- energy battery most rationality.Based on radioactivity
The nuclear battery of isotope has energy density height, long lifespan, not by such environmental effects the characteristics of.So far, by isotope
Radiative decay, which can be converted to electric energy, mainly 4 kinds of transformation mechanisms：Thermoelectric conversion type, directly rechargeable, direct energy conrersion formula,
Connect energy conversion type.Wherein direct energy conrersion method has the easily characteristic of miniaturization and easy of integrationization, into current research
Focus.Direct energy conrersion method is similar to solar cell, mainly absorbs isotopic source radiation using semiconductor structure
Beta (β) or Alpha's (α) ray energy simultaneously produce electron hole pair in semiconductor, pass through semiconductor p-n junctions or Schottky
Electron hole pair is separated and be transferred to passive electrode by the built in field of knot realizes energy conversion.Comprehensive study shows, directly turns
Change used in isotope battery that semiconductor energy gap is bigger, density is higher, and its conversion efficiency is higher, and Antiradiation injury ability is got over
By force.The p-n junction micro isotope battery based on 4H-SiC of the developments such as Chandrashekhar, in 1mCi activity63Ni solid-states
Under radiation source irradiation, open-circuit voltage reaches 0.72V, conversion efficiency up to 6% (M.V.S.Chandrashekhar,
C.I.Thomas,H.Li,M.G.Spencer and A.Lal,“Demonstration of a 4H-SiC betavoltaic
cell”,Applied Physics Letters,Vol.88(7),pp.423-429,2006.).San of Xiamen University et al. profits
It is made with one dimension semiconductor material based on wide bandgap semiconductor titanium dioxide (TiO2) nanometer porous array isotope battery,
10mCi activity63Under the irradiation of Ni solid state radiation sources, the open-circuit voltage of battery reaches 1.54V, short circuit current 12.4nA, maximum
Effective transformation efficiency reaches 7.3% (Qiang Zhang, Ranbin Chen, Haisheng San, Guohua Liu, Kaiying
Wang,“Betavoltaic effect in titanium dioxide nanotube arrays under build-in
potential difference”,Journal of Power Sources,Vol.282,pp.529-533,2015)。
The content of the invention
A kind of disorderly arranged broad stopband is provided it is an object of the invention to overcome the shortcomings of the prior art part
The isotope battery of semiconductor nanowires.
To achieve the above object, the technical scheme taken of the present invention is：Including underlayer electrode, top electrodes, broad stopband half
Nanowires layer and isotopic radiation source；The wide forbidden region semi-conductor nano tube/linear layer includes multiple nano wires, the nano wire
Surface there is schottky junction or hetero-junctions, multiple nano wires are interlaced in wide forbidden region semi-conductor nano tube/linear layer, described
Wide forbidden region semi-conductor nano tube/linear layer is located between underlayer electrode and top electrodes, and the isotopic radiation source is partly led located at broad stopband
In body nano wire layer and/or between wide forbidden region semi-conductor nano tube/linear layer and top electrodes.
The energy converslon materials that the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention uses
For wide bandgap semiconductor crystalline state nano wire.Wide bandgap semiconductor has the characteristics of density is big, Antiradiation injury ability is strong, is made with it
Standby isotope battery output voltage is high, therefore has higher energy conversion efficiency and device stability.And nano wire is partly led
The preparation method of body material is simple and various, easy and radioactive source mass integration, can more effectively separate electronics and hole, reduces electricity
Sub- hole pair it is again compound, so as to improve conversion ratio.
The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention is a kind of sandwich structure, wide
Bandgap semiconductor nano wire is the interlaced nano wire colony by either physically or chemically preparing, and passes through physics or change
Method makes dissimilar materials carry out effective surface recombination formation schottky junction or hetero-junctions, schottky junction or heterogeneous with nano wire
Knot can improve the efficiency of electron hole pair separation and transfer caused by radiation source radiation, reduce Carrier recombination rate, effectively carry
The energy conversion efficiency of high battery.
The isotopic radiation source can be located in wide forbidden region semi-conductor nano tube/linear layer, can also be located at wide bandgap semiconductor
Between nano wire layer and top electrodes, isotopic radiation source can be liquid, gaseous state or solid-state, in wide forbidden region semi-conductor nano tube/linear
In layer and/or between wide forbidden region semi-conductor nano tube/linear layer and top electrodes, the isotopic radiation source of liquid, gaseous state or solid-state can be with
Formed and be staggered to form in multiple nano wires with wide forbidden region semi-conductor nano tube/linear Material cladding by using method physically or chemically
Grid-gap in and/or be directly arranged between wide forbidden region semi-conductor nano tube/linear layer and top electrodes, realize radiation source material with
The contact of nano wire.Finally top electrodes are pressed on the wide forbidden region semi-conductor nano tube/linear layer above underlayer electrode, obtained same
The plain battery unit in position.
The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention is to realize high unit volume
Power output, multigroup unit multi-layer stacking integration packaging can be realized by mode in parallel or series.To be integrated with nano wire
Underlayer electrode is unit, and is superimposed multigroup unit stacking encapsulates successively.Topmost it will be collected with nethermost electrode definition
Positive pole and negative pole, achievable battery pack are connected in series；Odd electrode is connected as to collect positive pole, even electrode is connected as collecting and born
Realize being connected in parallel for battery pack in pole.
In wide forbidden region semi-conductor nano tube/linear layer, multiple interlaced settings of nano wire make the formation between nano wire low
Contact berrier, carrier can be made to be transported between different nano wires, so as to realize the biography of carrier in nanometer line network on the whole
It is defeated.
Preferably, the isotopic radiation source is in wide forbidden region semi-conductor nano tube/linear layer.
Isotopic radiation source is preferably disposed in wide forbidden region semi-conductor nano tube/linear layer, that is, isotopic radiation source is located at multiple
Nano wire is formed in the grid-gap being staggered to form, and isotopic radiation source can so contacted with the surface of nano wire more abundant.
In wide forbidden region semi-conductor nano tube/linear layer, the isotopic radiation source of liquid, gaseous state or solid-state can be by using physically or chemically
Method wide forbidden region semi-conductor nano tube/linear Material cladding is formed in the grid-gap that is staggered to form in multiple nano wires, realize spoke
Fully contacting for source material and nanowire surface is penetrated, the area of energy conversion active area greatly improved.
Preferably, the material of the nano wire be metal oxide, semiconducting compound and semiconductor simple substance at least
It is a kind of；The semiconducting compound is the semiconductor chemical combination containing group IIIA, the Vth A races, II A races, II B races or VI A races element
Thing.
Preferably, the material of the nano wire includes zinc oxide, zirconium dioxide, titanium dioxide, gallic oxide, titanium dioxide
Tin, tungstic acid, gallium nitride, gallium phosphide, indium nitride, aluminium nitride, aluminum phosphate, aluminium arsenide, cadmium sulfide, zinc sulphide, magnesium sulfide, selenium
Change at least one of zinc, magnesium selenide, silicon and diamond.
Preferably, a diameter of 10~1000nm of the nano wire, length are 5~1000 μm.
The preparation method of nano wire of the present invention is：The nanometer of disordered networks shape is prepared into by physically or chemically technique
Line, then high annealing is carried out, diameter is obtained between 10-1000nm, wide bandgap semiconductor of the length in 5-1000 μm of crystallization
Nano wire layer.Using above-mentioned draw ratio nano wire when, the active area of isotope material and energy converslon materials can be increased, most
The utilization rate of Radioactive Source Decay particle is improved to limits, so as to improve energy conversion efficiency.
Preferably, the isotopic radiation source is β radiation sources or α radiation sources；Preferably, the isotopic radiation source includes
At least one of tritium, nickel -63, Strontium-90, carbon-14 and promethium -147.
Isotopic radiation source material can be unit cellulosic material or isotope and the compound material of other materials,
It can be the compound-material of isotope.Physical aspect can be solid, gas or liquid.
Preferably, the material of the top electrodes and underlayer electrode is metal, electro-conductive glass, graphene, conducting polymer
At least one of with electrocondution slurry.
The metal can be the high conductive metal materials such as gold, silver, aluminium, copper.
Preferably, the schottky junction or heterogeneous become are modified or mixed to the surface of nano wire using dissimilar materials
Miscellaneous formation.
Preferably, the dissimilar materials is at least one of semiconductor, metal, graphene and macromolecule conducting material.
Preferably, the semiconductor be selected from metal oxide, the compound semiconducting compound of group IIIA and the Vth A races and
II B-group and the compound semiconducting compounds of the VIth A；The metal is selected from gold, silver and platinum；The macromolecule conducting material is selected from
Polypyrrole, polyphenylene sulfide, polyaniline and polythiophene.
The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention utilizes dissimilar materials modification half
Nanowires.By the compound dissimilar materials on nano wire, the structure type of the dissimilar materials can select nano particle
Or nanometer layer film, the dissimilar materials can be at least one in semiconductor, metal, graphene and macromolecule conducting material
Kind, SEMICONDUCTOR-METAL Schottky barrier is formed on nano wire whole length surface, its built in field promotes beta radiation to send a telegraph
Son-hole is transmitted along dissimilar materials and nano wire respectively to efficiently separating, and substantially reduces electronics and the recombination probability in hole,
It is effectively improved the energy conversion efficiency of battery.
The beneficial effects of the present invention are：The invention provides a kind of the same of disorderly arranged wide forbidden region semi-conductor nano tube/linear
The plain battery in position, the energy converslon materials that isotope battery of the present invention uses are semiconductor nanowires, and nano wire uses energy
Increase the active area of isotopic radiation source and energy converslon materials, improve the utilization of Radioactive Source Decay particle to greatest extent
Rate；The schottky junction or hetero-junctions of nanowire surface can improve caused by isotopic radiation source radiation electron hole pair separation and
The efficiency of transfer, reduce Carrier recombination rate, effectively improve the energy conversion efficiency of battery；By the same of liquid, gaseous state or solid-state
The plain radiation source in position can be compound in multiple receive by using method physically or chemically and wide forbidden region semi-conductor nano tube/linear material
Rice noodles are formed in the grid-gap being staggered to form, and realize that radiation source material fully contacts with nanowire surface, energy greatly improved
The area of amount conversion active area；Multiple interlaced settings of nano wire make the low contact berrier of the formation between nano wire, can make
Carrier transports between different nano wires, so as to realize the transmission of carrier in nanometer line network on the whole.It is of the present invention
The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear can realize that multigroup unit is more by mode in parallel or series
Layer stacking integration packaging, can be achieved high unit volume power output, has the characteristics of small volume and high energy density.
Brief description of the drawings
Fig. 1 is the structural representation of the isotope battery of wide forbidden region semi-conductor nano tube/linear disorderly arranged described in embodiment 1；
Fig. 2 is the knot of the isotope battery of wide forbidden region semi-conductor nano tube/linear disorderly arranged described in embodiment 2 and embodiment 3
Structure schematic diagram；
Fig. 3 is the multilayer series connection stacking envelope of the isotope battery unit of multigroup disorderly arranged wide forbidden region semi-conductor nano tube/linear
Fill schematic diagram；
Fig. 4 is the Multi-layer Parallel stacking envelope of the isotope battery unit of multigroup disorderly arranged wide forbidden region semi-conductor nano tube/linear
Fill schematic diagram.
Embodiment
To better illustrate the object, technical solutions and advantages of the present invention, below in conjunction with specific embodiment to the present invention
It is described further.
Embodiment 1
A kind of embodiment of the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention, such as Fig. 1
It is shown, top electrodes 1, wide forbidden region semi-conductor nano tube/linear layer 2, underlayer electrode 3 and isotopic radiation source 4 are followed successively by from top to bottom.
Multiple nano wires are provided with wide forbidden region semi-conductor nano tube/linear layer 2 described in the present embodiment, multiple nano wires are interlaced
Set, the surface of wide forbidden region semi-conductor nano tube/linear layer 2 is used as face finish material using graphene 5；Partly lead the broad stopband
The material of body nano wire is titanium dioxide, and the material of the underlayer electrode is electro-conductive glass, and top electrode material is electro-conductive glass,
The isotopic radiation source is tritium.
The preparation method of the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear described in the present embodiment, comprising with
Lower step：
(1), the preparation of underlayer electrode, top electrodes；
(2), the preparation of the wide forbidden region semi-conductor nano tube/linear layer of graphene modified：Using graphene to unordered 1-dimention nano
Line surface is modified, and then prepares wide forbidden region semi-conductor nano tube/linear layer, specifically, in a kettle, wide bandgap semiconductor seed
It is brilliant that the nano wire of disordered networks shape is grown to serve as by physics, chemical method, then high annealing is carried out, diameter is obtained in 10-
Between 1000nm, nano wire cluster of the length in 5-1000 μm of crystallization；Nano wire cluster and graphene oxide are dispersed in methanol
Or in the organic solution such as ethanol and be sufficiently mixed, then uniformly it is spun on underlayer electrode, graphene is obtained through reducing, after drying
The wide forbidden region semi-conductor nano tube/linear layer of modification；
(3), isotopic radiation source and wide forbidden region semi-conductor nano tube/linear layer is compound：By physical method, by isotope spoke
The source of penetrating is introduced into wide forbidden region semi-conductor nano tube/linear disordered array assembled layers；Or by chemical reaction method, make isotopic radiation source
With reference to semiconductor nanowires or decorative material is entered, realize that radioactive source material is compound in nanometer line network space；
(4), the encapsulation of isotope battery：Top electrodes are pressed in wide forbidden region semi-conductor nano tube/linear disordered array assembled layers
Upper surface, and contact conductor is picked out from underlayer electrode and top electrodes respectively, insulated enclosure protection then is carried out to battery edge,
Finally give the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as shown in Figure 1.
Embodiment 2
A kind of embodiment of the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention, such as Fig. 2
It is shown, top electrodes 6, wide forbidden region semi-conductor nano tube/linear layer 7, underlayer electrode 8 and isotopic radiation source 9 are followed successively by from top to bottom.
Multiple nano wires are provided with wide forbidden region semi-conductor nano tube/linear layer 2 described in the present embodiment, multiple nano wires are interlaced
Set, the surface of wide forbidden region semi-conductor nano tube/linear layer 7 is used as face finish material using noble metal gold 10；The broad stopband half
The material of nanowires is tin ash, and the material of the underlayer electrode is electro-conductive glass, and top electrode material is aluminium foil,
The isotopic radiation source is nickel -63.
The preparation method of the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear described in the present embodiment, comprising with
Lower step：
(1), the preparation of underlayer electrode, top electrodes；
(2), the preparation of the wide forbidden region semi-conductor nano tube/linear layer of noble metal gold modification：Table using noble metal gold to nano wire
Face is modified, and then prepares wide forbidden region semi-conductor nano tube/linear layer, and specifically, in a kettle, wide bandgap semiconductor seed crystal leads to
Physics, chemical method are crossed, is grown to serve as the one-dimensional nano line of disordered networks shape, then carries out high annealing, obtains diameter in 10-
Between 1000nm, nano wire cluster of the length in 5-1000 μm of crystallization；Nano wire cluster and tetra chlorauric acid crystal are dispersed in first
In the organic solution such as alcohol or ethanol and be sufficiently mixed, by physically or chemically the methods of reducing solution in gold ion, make gold it is attached
In nanowire surface.Restoring method can be reducing agent reducing process, thermal reduction, ultraviolet irradiation reducing process, electrochemical reduction
Method etc.；Then the nanowire solution by gold modification is uniformly spun on underlayer electrode, and the broad stopband half of gold modification is obtained after drying
Nanowires layer；
(3), isotopic radiation source and wide forbidden region semi-conductor nano tube/linear layer is compound：By physical method, by isotope spoke
The source of penetrating is introduced into wide forbidden region semi-conductor nano tube/linear disordered array assembled layers；Or by chemical reaction method, make isotopic radiation source
With reference to semiconductor nanowires or decorative material is entered, realize that radioactive source material is compound in one-dimensional nano line network space；
(4), the encapsulation of isotope battery：Top electrodes are pressed in wide forbidden region semi-conductor nano tube/linear disordered array assembled layers
Upper surface, and contact conductor is picked out from underlayer electrode and top electrodes respectively, insulated enclosure protection then is carried out to battery edge,
Finally give the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as shown in Figure 1.
Embodiment 3
A kind of embodiment of the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear of the present invention, such as Fig. 2
It is shown, include top electrodes 6, wide forbidden region semi-conductor nano tube/linear layer 7, underlayer electrode 8 and isotopic radiation source successively from top to bottom
9。
Multiple nano wires are provided with wide forbidden region semi-conductor nano tube/linear layer 2 described in the present embodiment, multiple nano wires are interlaced
Set, the surface of wide forbidden region semi-conductor nano tube/linear 7 is used as face finish material using lead sulfide nanoparticles 10；The wide taboo
Material with semiconductor nanowires is zirconium dioxide, and the material of the underlayer electrode is electro-conductive glass, and top electrode material is gold
Belong to paillon foil, the isotopic radiation source is carbon-14.
The preparation method of the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear described in the present embodiment, comprising with
Lower step：
(1), the preparation of underlayer electrode, top electrodes；
(2), the preparation of the wide forbidden region semi-conductor nano tube/linear layer of lead sulfide nanoparticles modification：Utilize lead sulfide nanoparticles
Unordered one-dimensional nano line surface is modified, then prepares wide forbidden region semi-conductor nano tube/linear layer, specifically, passes through colloidization
The methods of method, sol-gal process, vapour deposition, microemulsion method, electrochemical deposition method or hydro-thermal method, prepares vulcanized lead nanometer
Particle.In a kettle, wide bandgap semiconductor seed crystal is grown to serve as a wiener of disordered networks shape by physics, chemical method
Rice noodles, then high annealing is carried out, diameter is obtained between 10-1000nm, nano wire cluster of the length in 5-1000 μm of crystallization；Will
Nano wire cluster is dispersed in the organic solutions such as methanol or ethanol and is sufficiently mixed with lead sulfide nanoparticles, then uniform spin coating
In the wide forbidden region semi-conductor nano tube/linear layer on underlayer electrode, obtaining lead sulfide nanoparticles modification after drying；
(3), isotopic radiation source and wide forbidden region semi-conductor nano tube/linear layer is compound：By physical method, by isotope spoke
The source of penetrating is introduced into wide forbidden region semi-conductor nano tube/linear disordered array assembled layers；Or by chemical reaction method, make isotopic radiation source
With reference to semiconductor nanowires or decorative material is entered, realize that radioactive source material is compound in nanometer line network space；
(4), the encapsulation of isotope battery：Top electrodes are pressed in wide forbidden region semi-conductor nano tube/linear disordered array assembled layers
Upper surface, and contact conductor is picked out from underlayer electrode and top electrodes respectively, insulated enclosure protection then is carried out to battery edge,
Finally give the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as shown in Figure 2.
Embodiment 4
As shown in figure 3, the isotope battery of wide forbidden region semi-conductor nano tube/linear disorderly arranged described in multiple embodiments 1 is led to
The mode for crossing series connection realizes multigroup unit multi-layer stacking integration packaging, mainly includes external load 11, storage capacitance 12, broad stopband
Semiconductor nanowires isotope battery unit 13 and external wire 14.
As shown in figure 4, the isotope battery of wide forbidden region semi-conductor nano tube/linear disorderly arranged described in multiple embodiments 1 is led to
The mode for crossing parallel connection realizes multigroup unit multi-layer stacking integration packaging, mainly includes external load 15, storage capacitance 16, broad stopband
Semiconductor nanowires isotope battery unit 17 and external wire 18.
The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear cascade encapsulation specific method be：To implement
The isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear described in example 1 is unit, and successively folds multigroup unit stacking
Seal up dress.Topmost it will be connected in series with nethermost electrode definition to collect positive pole and negative pole, achievable battery pack, such as Fig. 3
It is shown；Unit odd electrode is connected as to collect positive pole, even electrode is connected as collection negative pole and realizes being connected in parallel for battery pack,
As shown in Figure 4.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than the present invention is protected
The limitation of scope is protected, although being explained in detail with reference to preferred embodiment to the present invention, one of ordinary skill in the art should
Understand, technical scheme can be modified or equivalent substitution, without departing from the essence of technical solution of the present invention
And scope.
Claims (10)
1. a kind of isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear, it is characterised in that including underlayer electrode, top
Portion's electrode, wide forbidden region semi-conductor nano tube/linear layer and isotopic radiation source；The wide forbidden region semi-conductor nano tube/linear layer includes multiple receive
Rice noodles, the surface of the nano wire have schottky junction or hetero-junctions, and the multiple nano wire is interlaced to be located at broad stopband half
In nanowires layer, the wide forbidden region semi-conductor nano tube/linear layer is located between underlayer electrode and top electrodes, the isotope
Radiation source is in wide forbidden region semi-conductor nano tube/linear layer and/or between wide forbidden region semi-conductor nano tube/linear layer and top electrodes.
2. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
Isotopic radiation source is in wide forbidden region semi-conductor nano tube/linear layer.
3. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
The material of nano wire is at least one of metal oxide, semiconducting compound and semiconductor simple substance；The semiconductor chemical combination
Thing is the semiconducting compound containing group IIIA, the Vth A races, II A races, II B races or VI A races element.
4. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
The material of nano wire include zinc oxide, zirconium dioxide, titanium dioxide, gallic oxide, tin ash, tungstic acid, gallium nitride,
Gallium phosphide, indium nitride, aluminium nitride, aluminum phosphate, aluminium arsenide, cadmium sulfide, zinc sulphide, magnesium sulfide, zinc selenide, magnesium selenide, silicon and gold
At least one of hard rock.
5. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
A diameter of 10~1000nm of nano wire, length are 5~1000 μm.
6. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
Isotopic radiation source is β radiation sources or α radiation sources.
7. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
Isotopic radiation source includes at least one of tritium, nickel -63, Strontium-90, carbon-14 and promethium -147.
8. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
The material of top electrodes and underlayer electrode is at least one in metal, electro-conductive glass, graphene, conducting polymer and electrocondution slurry
Kind.
9. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 1, it is characterised in that described
Schottky junction or heterogeneous become are modified or adulterated to the surface of nano wire to be formed using dissimilar materials.
10. the isotope battery of disorderly arranged wide forbidden region semi-conductor nano tube/linear as claimed in claim 9, it is characterised in that institute
Dissimilar materials is stated as at least one of semiconductor, metal, graphene and macromolecule conducting material.
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