CN107779835A - A kind of method of continous way magnetic control sputtering device and continous way magnetron sputtering - Google Patents

A kind of method of continous way magnetic control sputtering device and continous way magnetron sputtering Download PDF

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Publication number
CN107779835A
CN107779835A CN201711267226.8A CN201711267226A CN107779835A CN 107779835 A CN107779835 A CN 107779835A CN 201711267226 A CN201711267226 A CN 201711267226A CN 107779835 A CN107779835 A CN 107779835A
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Prior art keywords
magnetron sputtering
chamber
continous way
magnetic control
movable device
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CN201711267226.8A
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毛华云
梁礼渭
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JLMAG RARE-EARTH Co Ltd
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JLMAG RARE-EARTH Co Ltd
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Priority to CN201711267226.8A priority Critical patent/CN107779835A/en
Publication of CN107779835A publication Critical patent/CN107779835A/en
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides a kind of continous way magnetic control sputtering device, including the magnetron sputtering stove containing vacuum chamber, magnetron sputtering chamber and cooling chamber;The vacuum chamber is arranged on the side of the magnetron sputtering chamber, is separated between vacuum chamber and the magnetron sputtering chamber with the first movable device;The cooling chamber is arranged on the opposite side of the magnetron sputtering chamber, is separated between the cooling chamber and magnetron sputtering chamber with the second movable device;The vacuum chamber is arranged at the porch of the magnetron sputtering stove, and the cooling chamber is arranged at the exit for stating magnetron sputtering stove.The invention provides a kind of continous way magnetic control sputtering device, has continuous three chambers, is respectively vacuum chamber, magnetron sputtering chamber, cooling chamber by job order.Separated between three chambers with movable device, each work, does not interfere with each other, it is achieved thereby that continuous production, reduces the stand-by period for vacuumizing and cooling down, improves production efficiency.

Description

A kind of method of continous way magnetic control sputtering device and continous way magnetron sputtering
Technical field
The invention belongs to magnet preparing technical field, is related to a kind of continous way magnetic control sputtering device and continous way magnetron sputtering Method, it is more particularly to a kind of for the continous way magnetic control sputtering device of neodymium iron boron magnetic body plated film and the side of continous way magnetron sputtering Method.
Background technology
Physical vapour deposition (PVD) (Physical Vapor Deposition, PVD) technology represents under vacuum, to use Physical method, by material source -- solid or liquid surface are gasificated into gaseous atom, molecule or partial ionization into ion, and by low Calm the anger body (or plasma) process, in the technology of film of the matrix surface deposition with certain specific function.Physical vapor is sunk Long-pending main method has, vacuum evaporation, sputter coating, arc-plasma plating, ion film plating, and molecular beam epitaxy etc., development To current, physical gas phase deposition technology not only can deposited metal film, alloy film, can with deposited compound, ceramics, semiconductor, Polymer film etc..
Among these, magnetron sputtering is more one kind of utilization rate during realizing commercial Application in recent years, magnetron sputtering Film refers under vacuum, using the particle bombardment target surfaces for obtaining function, make target material surface atom obtain enough Energy and the process escaped.The target material deposition being sputtered is referred to as sputter coating to substrate surface.In sputter coating it is incident from Son, typically obtained using glow discharge, so the particle sputtered out is during matrix is flown to, easily and the gas in vacuum chamber Molecule collides, and makes the direction of motion random, and the film of deposition is easy to uniform.Existing scale magnetron sputtering plating, deposition speed Rate is higher, good process repeatability, is easy to automate, and has equipment is simple, easily controllable, plated film area is big and adhesive force is strong etc. Advantage, with continuous research, even more realize high speed, low temperature, low damage.
Existing magnetron sputtering, mainly in negative electrode (target) between anode (plated matrix) apply orthogonal magnetic field and Electric field, under vacuum state, be passed through inert gas argon gas, make argon plasma, and in the presence of magnetic field and electric field, at a high speed Hong Target is hit, target is sputtered onto plated matrix surface with ion or atomic form, forms the protective layer of densification.Exactly because its into The advantages that film is uniform, and adhesion is good, and the feature of environmental protection is good is widely used in surfacecti proteon field, has been adapted for carrying out large-scale build Build decoration film coating, and the feature plated film of industrial materials.Such as a kind of Patent No. CN105112873A magnetic control of patent disclosure Sputter equipment, the device include a magnetron sputtering chamber, and target is provided with chamber and places the base of plated matrix, work When target and matrix base respectively as negative electrode and anode, while circular magnet is housed inside target, there is provided orthogonal with electric field Magnetic field, after being passed through argon gas, you can bombardment target is simultaneously sputtered onto matrix surface, forms one layer of dense protective layer.
But in current actual application, the defects of many undesirable still also be present, especially in actual production work In sequence, as magnet coating process in, because magnetron sputtering need to be realized under vacuum conditions, thus at present common practice be, Plated matrix is placed in stove, vacuumized, plate overcoat, after cooling blow-on obtain final products.The technique is needed per stove evacuation, Etc. to be cooled, nonproductive time length, low production efficiency.
Therefore, a kind of apparatus and method of magnetron sputtering how are obtained, improve production effect, it has also become many manufacturing enterprises With use one of enterprise urgent problem to be solved.
The content of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of continous way magnetic control sputtering device and continous way The method of magnetron sputtering, in particular for the continous way magnetic control sputtering device and method of neodymium iron boron magnetic body plated film, of the invention carries The continous way magnetic control sputtering device of confession can effectively realize the continuity of plated film production, when reducing the wait for vacuumizing and cooling down Between, improve production efficiency.
The invention provides a kind of continous way magnetic control sputtering device, including contain vacuum chamber, magnetron sputtering chamber and cold But the magnetron sputtering stove of chamber;
The vacuum chamber is arranged on the side of the magnetron sputtering chamber, vacuum chamber and the magnetron sputtering chamber it Between separated with the first movable device;
The cooling chamber is arranged on the opposite side of the magnetron sputtering chamber, the cooling chamber and magnetron sputtering chamber Between separated with the second movable device;
The vacuum chamber is arranged at the porch of the magnetron sputtering stove, and the cooling chamber is arranged at the magnetic control and splashed Penetrate the exit of stove.
Preferably, the described first movable device includes flapper valve or push-pull valve;
The second movable device includes flapper valve or push-pull valve.
Preferably, the described first movable device is located at the side of magnetron sputtering chamber and is provided with scraper plate;
The side that the second movable device is located at magnetron sputtering chamber is provided with scraper plate.
Preferably, first material conveyer is additionally provided with the vacuum chamber;
Second material conveyer is additionally provided with the magnetron sputtering chamber;
3 material conveyer is additionally provided with the cooling chamber.
Preferably, two in the first material conveyer, second material conveyer and 3 material conveyer It is individual or multiple, the continuous transmission of material can be realized when in use.
Preferably, the first material conveyer includes the one or more in guide rail, conveyer belt and conveying roller;
The second material conveyer includes the one or more in guide rail, conveyer belt and conveying roller;
The 3 material conveyer includes the one or more in guide rail, conveyer belt and conveying roller.
Preferably, it is additionally provided with encapsulant in the magnetron sputtering stove.
Preferably, the size of the vacuum chamber is the wide * 500~3000mm of the long * 200~3000mm of 1200~4200mm It is high;
The size of the magnetron sputtering chamber is that the wide * 500~3000mm of the long * 200~3000mm of 1200~4200mm are high;
The size of the cooling chamber is that the wide * 500~3000mm of the long * 200~3000mm of 1200~4200mm are high.
Present invention also offers a kind of method of continous way magnetron sputtering, comprise the following steps:
1) from the import of magnetron sputtering stove, first raw material is placed in vacuum chamber, open the first movable device and Second movable device, vacuum chamber, magnetron sputtering chamber are connected with cooling chamber, vacuumized;
2) first raw material is sent into magnetron sputtering chamber, closes the first movable device and the second movable device, enter Row observing and controlling sputters, then by second batch raw material, from the import of magnetron sputtering stove, is sent into vacuum chamber, is vacuumized again;
3) the second movable device is opened, first raw material of magnetron sputtering will be completed, cooling chamber is sent into and is cooled down, The second movable device is closed, then opens the first movable device, second batch raw material is sent into magnetron sputtering chamber, closes first Movable device, carry out observing and controlling again and sputter, the then import by the 3rd batch of raw material from magnetron sputtering stove, be sent into vacuum chamber It is interior, vacuumized for the third time;
Repeat the above steps, carry out continous way magnetron sputtering.
Preferably, the raw material includes neodymium iron boron magnetic body;
The vacuum vacuumized is (1~9) × 10- 3Pa;
The temperature of the magnetron sputtering is 100~400 DEG C
The time of the magnetron sputtering is 1~5h;
The time of the cooling is 0.2~2h.
The invention provides a kind of continous way magnetic control sputtering device, including contain vacuum chamber, magnetron sputtering chamber and cold But the magnetron sputtering stove of chamber;The vacuum chamber is arranged on the side of the magnetron sputtering chamber, the vacuum chamber and magnetic Separated between control sputtering chamber with the first movable device;The cooling chamber is arranged on the another of the magnetron sputtering chamber Side, separated between the cooling chamber and magnetron sputtering chamber with the second movable device;The vacuum chamber is arranged at described The porch of magnetron sputtering stove, the cooling chamber are arranged at the exit for stating magnetron sputtering stove.Compared with prior art, this hair It is bright to be directed to existing magnetic control sputtering device in actual use, it is necessary to which plated matrix is placed in stove, vacuumize, plating protection Layer, blow-on obtains final products after cooling, and will be vacuumized per stove, waits to be cooled, nonproductive time length, low production efficiency Defect.
The present invention starts with from existing magnetic control sputtering device structure, and existing apparatus all includes a magnetron sputtering chamber, Vacuumize and cool down and all completed in magnetron sputtering chamber, grown so as to cause to vacuumize and the nonproductive time such as cool down, production efficiency It is low.The invention provides a kind of continous way magnetic control sputtering device, has continuous three chambers, is respectively vacuum by job order Chamber, magnetron sputtering chamber, cooling chamber.Separated between three chambers with movable device, each work, does not interfere with each other. When magnetron sputtering chamber works, vacuum chamber starts to vacuumize, and cooling chamber cools down upper stove product, chamber and magnetic control to be cooled When sputtering chamber completes work, product moves to next chamber, so as to realize continuous production, reduces the wait for vacuumizing and cooling down Time, production efficiency is improved, the inherent shortcoming of original magnetic control sputtering device service intermittent is largely overcomed, realizes magnetic control and splash The continuous controllable operation of injection device.
Test result indicates that carrying out magnetron sputtering plating using continous way magnetic control sputtering device provided by the invention, compare Original magnetic control sputtering device, save the time nearly 50%.
Brief description of the drawings
Fig. 1 is the structure schematic diagram of magnetic control sputtering device provided in an embodiment of the present invention.
Embodiment
For a further understanding of the present invention, the preferred embodiment of the invention is described with reference to embodiment, still It should be appreciated that these descriptions are intended merely to further illustrate the features and advantages of the present invention, rather than to invention claim Limitation.
All raw materials of the present invention, its source is not particularly limited, commercially buying or according to people in the art Known to member prepared by conventional method.
The present invention all technique, equipment and parts, its title belong to the conventional designation of this area, and each title is in its phase It is explicit to close in the field of purposes, and those skilled in the art are according to title, it is to be understood that its conventional processing step With use corresponding equipment, part.
The invention provides a kind of continous way magnetic control sputtering device, including contain vacuum chamber, magnetron sputtering chamber and cold But the magnetron sputtering stove of chamber;
The vacuum chamber is arranged on the side of the magnetron sputtering chamber, vacuum chamber and the magnetron sputtering chamber it Between separated with the first movable device;
The cooling chamber is arranged on the opposite side of the magnetron sputtering chamber, the cooling chamber and magnetron sputtering chamber Between separated with the second movable device;
The vacuum chamber is arranged at the porch of the magnetron sputtering stove, and the cooling chamber is arranged at the magnetic control and splashed Penetrate the exit of stove.
Continous way magnetic control sputtering device of the present invention, it is containing vacuum chamber, magnetron sputtering chamber and cooling chamber Magnetron sputtering stove.In embodiments of the present invention, the vacuum chamber is arranged at the porch of the magnetron sputtering stove, the cooling Chamber is arranged at the exit of the magnetron sputtering stove.I.e. when continous way magnetic control sputtering device works, raw material is sent from porch Enter, be introduced into vacuum chamber, after completing whole set process, from cooling chamber, exported through outlet.In embodiments of the present invention, it is described Vacuum chamber, magnetron sputtering chamber and cooling chamber are disposed adjacent successively, and its role is to preferably realize magnetic control sputtering device Continuous production.In other embodiments, the vacuum chamber can be arranged on other positions, in favor of preferably realizing magnetic The continuous production for controlling sputter equipment is preferred scheme.In other embodiments, the cooling chamber can be arranged on other positions Put, in favor of preferably realizing that the continuous production of magnetic control sputtering device is preferred scheme.In other embodiments, the vacuum Other setting relations can also be used between chamber, magnetron sputtering chamber and cooling chamber, in favor of preferably realizing magnetic control The continuous production of sputter equipment is preferred scheme.
In embodiments of the present invention, the vacuum chamber is arranged on the side of the magnetron sputtering chamber, the vacuum chamber Separated between room and magnetron sputtering chamber with the first movable device, its role is to preferably realize the company of magnetic control sputtering device Continuous metaplasia production.In other embodiments, the vacuum chamber can be arranged on other positions, in favor of preferably realizing that magnetic control splashes The continuous production of injection device is preferred scheme.In other embodiments, between vacuum chamber and the magnetron sputtering chamber It can be separated with other devices, in favor of preferably realizing that the continuous production of magnetic control sputtering device is preferred scheme.
Described first movable device is not particularly limited the present invention, can be realized with well known to those skilled in the art The device isolated and connected, those skilled in the art can be according to practical condition, product design requirement and characteristics It is required that being selected or being adjusted, the first movable device of the present invention preferably includes flapper valve or push-pull valve, more preferably keeps off Plate valve.First movable device of the present invention can be control manually, automatically control with remote logic control in one kind or It is a variety of, more preferably control manually, automatically control or remote logic control, most preferably remote logic control.
In embodiments of the present invention, the cooling chamber is arranged on the opposite side of the magnetron sputtering chamber, the cooling Separated between chamber and magnetron sputtering chamber with the second movable device, its role is to preferably realize magnetic control sputtering device Continuous production.In other embodiments, the cooling chamber can be arranged on other positions, in favor of preferably realizing magnetic control The continuous production of sputter equipment is preferred scheme.In other embodiments, between the cooling chamber and magnetron sputtering chamber Also can be separated with other devices, in favor of preferably realizing that the continuous production of magnetic control sputtering device is preferred scheme.
Described second movable device is not particularly limited the present invention, can be realized with well known to those skilled in the art The device isolated and connected, those skilled in the art can be according to practical condition, product design requirement and characteristics It is required that being selected or being adjusted, the second movable device of the present invention preferably includes flapper valve or push-pull valve, more preferably keeps off Plate valve.Second movable device of the present invention can be control manually, automatically control with remote logic control in one kind or It is a variety of, more preferably control manually, automatically control or remote logic control, most preferably remote logic control.
In embodiments of the present invention, the described first movable device is located at the side of magnetron sputtering chamber and is additionally provided with scraper plate (the first scraper plate), i.e., scraper plate can be arranged on the side of magnetron sputtering chamber, can also be arranged on the first movable device, excellent Choosing is arranged on the top of the first movable device, and its role is in magnetron sputtering process, the first head splashes positioned at magnetic control Chamber side is penetrated, the metal that there can be sputtering, influences the air-tightness that the first head is run, and scraper plate be able to can live first During dynamic device folding, the metal sputtered on the first head is struck off, so as to ensure that the sealing between three chambers.At it Can also be set in his embodiment, in magnetron sputtering stove other devices be used for remove sputter metal, scraper plate can also be set It is used for the metal for removing sputtering in other positions, in favor of preferably ensureing the sealing and magnetic control sputtering device between chamber Continuous production be preferred scheme.
In embodiments of the present invention, the described second movable device is located at the side of magnetron sputtering chamber and is additionally provided with scraper plate (the second scraper plate), i.e., scraper plate can be arranged on the side of magnetron sputtering chamber, can also be arranged on the second movable device, excellent Choosing is arranged on the top of the second movable device, and its role is in magnetron sputtering process, the second movable device is located at magnetic control Sputtering chamber side, there can be the metal of sputtering, influence the air-tightness of the second movable plant running, and scraper plate can be second During movable device folding, the metal sputtered on the second movable device is struck off, so as to ensure that the sealing between three chambers Property.In other embodiments, can also be set in magnetron sputtering stove other devices be used for remove sputter metal, will can also scrape Plate be arranged on other positions be used for remove sputtering metal, in favor of preferably guarantee chamber between sealing and magnetic control splash The continuous production of injection device is preferred scheme.
In embodiments of the present invention, first material conveyer is additionally provided with the vacuum chamber, its role is to more Transported in the system of good guarantee raw material, realize the continuous production of magnetic control sputtering device.In other embodiments, the vacuum Other positions can also be arranged in chamber, in favor of preferably ensureing to be transported in the system of raw material, preferably realize that magnetic control splashes The continuous production of injection device is preferred scheme.
The present invention first material conveyer is not particularly limited, with it is well known to those skilled in the art can be real The device of existing raw material transmission, those skilled in the art can be according to practical condition, product design requirement and characteristics It is required that being selected or being adjusted, first material conveyer of the present invention is preferably included in guide rail, conveyer belt and conveying roller One or more, more preferably guide rail, conveyer belt or conveying roller, most preferably guide rail.First material of the present invention passes Device is sent more preferably to be controlled manually, certainly to control, automatically controlling the one or more in being controlled with remote logic manually Dynamic control or remote logic control, most preferably remote logic control.
In embodiments of the present invention, second material conveyer is additionally provided with the magnetron sputtering chamber, it is acted on Transported in the system for preferably ensureing raw material, realize the continuous production of magnetic control sputtering device.In other embodiments, it is described Other positions can also be arranged in magnetron sputtering chamber, it is preferably real in favor of preferably ensureing to be transported in the system of raw material The continuous production of existing magnetic control sputtering device is preferred scheme.
The present invention second material conveyer is not particularly limited, with it is well known to those skilled in the art can be real The device of existing raw material transmission, those skilled in the art can be according to practical condition, product design requirement and characteristics It is required that being selected or being adjusted, second material conveyer of the present invention is preferably included in guide rail, conveyer belt and conveying roller One or more, more preferably guide rail, conveyer belt or conveying roller, most preferably guide rail.Second material of the present invention passes Device is sent more preferably to be controlled manually, certainly to control, automatically controlling the one or more in being controlled with remote logic manually Dynamic control or remote logic control, most preferably remote logic control.
In embodiments of the present invention, 3 material conveyer is additionally provided with the magnetron sputtering chamber, it is acted on Transported in the system for preferably ensureing raw material, realize the continuous production of magnetic control sputtering device.In other embodiments, it is described Other positions can also be arranged in magnetron sputtering chamber, it is preferably real in favor of preferably ensureing to be transported in the system of raw material The continuous production of existing magnetic control sputtering device is preferred scheme.
The present invention 3 material conveyer is not particularly limited, with it is well known to those skilled in the art can be real The device of existing raw material transmission, those skilled in the art can be according to practical condition, product design requirement and characteristics It is required that being selected or being adjusted, 3 material conveyer of the present invention is preferably included in guide rail, conveyer belt and conveying roller One or more, more preferably guide rail, conveyer belt or conveying roller, most preferably guide rail.3 material of the present invention passes Device is sent more preferably to be controlled manually, certainly to control, automatically controlling the one or more in being controlled with remote logic manually Dynamic control or remote logic control, most preferably remote logic control.
In embodiments of the present invention, the first material conveyer, second material conveyer and 3 material transmission It is two or more in device, the continuous transmission of material can be carried out.Its role is to preferably ensure the system interior energy of raw material The continuous transmission of material is enough realized, contributes to the continuous production of magnetic control sputtering device.In the present invention due to three chambers it Between head be present and carry out folding, so material conveying device is not easy to connect or connects setting, but can be by pressing close to set Put or using other factorses such as gravity etc., realize continuous transmission.In other embodiments, the first material conveyer, Two or more settings that can also use integral conveyer in two material conveying devices and 3 material conveyer Or other positions are arranged on, continuous transmission is realized, in favor of preferably ensureing continuative transport in the system of raw material, is preferably realized The continuous production of magnetic control sputtering device is preferred scheme.
In embodiments of the present invention, preferably it is additionally provided with encapsulant in the magnetron sputtering stove.Its role is to help In the device for being frequently necessary to folding, sealing is kept, contributes to the continuous production of magnetic control sputtering device.In other embodiment In, other devices can also be provided with, to improve the sealing for being frequently necessary to closing device, preferably realize magnetic control sputtering device Continuous production be preferred scheme.
The set location of the encapsulant is not particularly limited the present invention, with sealing well known to those skilled in the art The conventional arrangement position of material, those skilled in the art can be according to practical condition, product design requirement and spies Property require selected or adjusted.
In embodiments of the present invention, the bleeding point vacuumized is preferably additionally provided with the magnetron sputtering stove, it is acted on In the continuous production of magnetic control sputtering device can be contributed to carrying out vacuum pumping in stove.In other embodiments, also may be used To be provided with other devices, can keep vacuum, the continuous production for preferably realizing magnetic control sputtering device is preferred side Case.
The set location of the bleeding point vacuumized is not particularly limited the present invention, with known to those skilled in the art The bleeding point vacuumized conventional arrangement position, those skilled in the art can be according to outside practical condition, product Shape requirement and characteristic requirements are selected or adjusted, and the bleeding point of the present invention vacuumized is preferably separately positioned on three chambers It is indoor.
In embodiments of the present invention, the inflation inlet of working gas is preferably additionally provided with the magnetron sputtering stove, it is acted on It is that the continuous production of magnetic control sputtering device can be contributed to being filled with working gas in stove.In other embodiments, also may be used To be provided with other devices, can be filled with working gas, the continuous production for preferably realizing magnetic control sputtering device is preferred Scheme.
The set location of the inflation inlet of the working gas is not particularly limited the present invention, ripe with those skilled in the art The conventional arrangement position of the inflation inlet for the working gas known, those skilled in the art can be according to practical condition, productions Product shape requirement and characteristic requirements are selected or adjusted, and the inflation inlet of working gas of the present invention is preferably separately positioned on In three chambers, more preferably it is arranged in magnetron sputtering chamber.
The concrete structure parameter of the vacuum chamber is not particularly limited the present invention, with well known to those skilled in the art The conventional parameter of magnetron sputtering stove, those skilled in the art can according to practical condition, product design requirement and Characteristic requirements are selected or adjusted, and the size of vacuum chamber of the present invention, length, width and height are respectively preferably 1200~4200mm* 200~3000mm*500~3000mm, wherein, length is more preferably 1700~3700mm, more preferably 2200~3200mm;It is wide Degree is more preferably 700~2500mm, more preferably 1200~2000mm;1000~2500mm is highly more preferably, more preferably 1500~2000mm.
The concrete structure parameter of the magnetron sputtering chamber is not particularly limited the present invention, ripe with those skilled in the art The conventional parameter for the magnetron sputtering stove known, those skilled in the art can be according to practical condition, product design requirements And characteristic requirements are selected or adjusted, the size of magnetron sputtering chamber of the present invention, length, width and height are respectively preferably 1200 ~4200mm*200~3000mm*500~3000mm, wherein, length is more preferably 1700~3700mm, more preferably 2200~ 3200mm;Width is more preferably 700~2500mm, more preferably 1200~2000mm;1000~2500mm is highly more preferably, More preferably 1500~2000mm.
The concrete structure parameter of the cooling chamber is not particularly limited the present invention, with well known to those skilled in the art The conventional parameter of magnetron sputtering stove, those skilled in the art can according to practical condition, product design requirement and Characteristic requirements are selected or adjusted, and the size of cooling chamber of the present invention, length, width and height are respectively preferably 1200~4200mm* 200~3000mm*500~3000mm, wherein, length is more preferably 1700~3700mm, more preferably 2200~3200mm;It is wide Degree is more preferably 700~2500mm, more preferably 1200~2000mm;1000~2500mm is highly more preferably, more preferably 1500~2000mm.
Present invention also offers a kind of method of continous way magnetron sputtering, comprise the following steps:
1) from the import of magnetron sputtering stove, first raw material is placed in vacuum chamber, open the first movable device and Second movable device, vacuum chamber, magnetron sputtering chamber are connected with cooling chamber, vacuumized;
2) first raw material is sent into magnetron sputtering chamber, closes the first movable device and the second movable device, enter Row observing and controlling sputters, then by second batch raw material, from the import of magnetron sputtering stove, is sent into vacuum chamber, is vacuumized again;
3) the second movable device is opened, first raw material of magnetron sputtering will be completed, cooling chamber is sent into and is cooled down, The second movable device is closed, then opens the first movable device, second batch raw material is sent into magnetron sputtering chamber, closes first Movable device, carry out observing and controlling again and sputter, the then import by the 3rd batch of raw material from magnetron sputtering stove, be sent into vacuum chamber It is interior, vacuumized for the third time;
Repeat the above steps, carry out continous way magnetron sputtering.
The specifically chosen of raw material of the present invention is not particularly limited, and magnetic can be used with well known to those skilled in the art The convenient source of sputtering is controlled, those skilled in the art can be according to practical condition, product requirement and performance requirement Selected or adjusted, for the present invention preferably to realize continuous production, the raw material preferably includes neodymium iron boron magnetic body.
The design parameter of continous way magnetron sputtering of the present invention is not particularly limited, with well known to those skilled in the art Can use magnetron sputtering conventional parameter, those skilled in the art can according to practical condition, product requirement with And performance requirement is selected or adjusted, the present invention is preferably to realize continuous production, and vacuumizing for the magnetron sputtering is true Reciprocal of duty cycle is preferably (1~9) × 10-3Pa, more preferably (2~8) × 10-3Pa, more preferably (4~6) × 10-3Pa.Institute of the present invention The temperature for stating magnetron sputtering is preferably 100~400 DEG C, more preferably 150~350 DEG C, more preferably 200~300 DEG C.The present invention The time of the magnetron sputtering is 1~5h, more preferably 1.5~4.5h, more preferably 2~4h, more preferably 2.5~3.5h. The time of cooling of the present invention is preferably 0.2~2h, more preferably 0.5~1.8h, more preferably 0.7~1.5h, more preferably For 0.9~1.3h.
Referring to Fig. 1, Fig. 1 is the structure schematic diagram of magnetic control sputtering device provided in an embodiment of the present invention.Wherein, 1 be into Mouth fire door, 2 be vacuum chamber, and 3 be magnetron sputtering chamber, and 4 be cooling chamber, and 5 be outlet fire door, and 6 be first gear plate valve, and 7 are Second gear plate valve, 8 be the first scraper plate, and 9 be the second scraper plate, and 10 be the first guide rail, and 11 be the second guide rail, and 12 be the 3rd guide rail, 13 It is second batch raw material for first raw material, 14,15 be the 3rd batch of raw material.
The present invention is further refinement and complete process flow, ensures the effect of continous way magnetron sputtering, above-mentioned steps tool Body can be:
1st, it will be put into by plated product from import fire door in vacuum chamber, open flapper valve, make three chambers, opened true Empty pumping vacuum, makes Chamber vacuum degree reach vacuum needed for magnetron sputtering.
2nd, product to be sent into magnetron sputtering chamber by guide rail, closes two flapper valves, magnetron sputtering chamber is started working, Now second batch product is sent into vacuum chamber by import fire door, opens vavuum pump, vacuum chamber is vacuumized.
3. treating that the work of magnetron sputtering chamber is completed, second gear plate valve is opened, the product plated is sent into by guide rail cold But chamber, second gear plate valve is closed.First gear plate valve is opened, the product in vacuum chamber is sent into magnetron sputtering chamber, closed First gear plate valve, start magnetron sputtering, while next batch materials are sent into vacuum chamber.During flapper valve is opened, gear Attached scraper plate can strike off the metal sputtered on flapper valve on plate valve, so as to ensure that the sealing between three chambers.
4. next batch materials repeat according to above-mentioned 3 steps, product is set to plate required protective coating.Above step weight Multiple operation, reciprocation cycle, so as to realize that production is not stagnated continuously.
Above-mentioned steps of the present invention provide a kind of continous way magnetic control sputtering device for neodymium iron boron magnetic body plated film and continuous The method of formula magnetron sputtering, the present invention start with from existing magnetic control sputtering device structure, there is provided a kind of continous way magnetic control splashes Injection device, there is continuous three chambers, be respectively vacuum chamber, magnetron sputtering chamber and cooling chamber by job order, from And will vacuumize and cool down and be separated with magnetron sputtering, each work.Separated between three chambers with flapper valve, respective work Make, do not interfere with each other.When magnetron sputtering chamber works, vacuum chamber starts to vacuumize, and cooling chamber cools down upper stove product, treats When cooling chamber and magnetron sputtering chamber complete work, product moves to next chamber by guide rail, and in order to prevent flapper valve Target metal is coated with, the metal plated can be struck off, be advantageous in flapper valve top installation scraper plate, each flapper valve folding Flapper valve keeps sealing property, so as to realize continuous production, reduces the stand-by period for vacuumizing and cooling down, and improves production effect Rate, the inherent shortcoming of original magnetic control sputtering device service intermittent is largely overcomed, realizing the continuous of magnetic control sputtering device can Control operation.
Test result indicates that carrying out magnetron sputtering plating using continous way magnetic control sputtering device provided by the invention, compare Original magnetic control sputtering device, save the time nearly 50%.
In order to further illustrate the present invention, a kind of continous way magnetron sputtering provided by the invention is filled with reference to embodiments Put and the method for continous way magnetron sputtering is described in detail, but it is to be understood that these embodiments are with the technology of the present invention Implemented under premised on scheme, give detailed embodiment and specific operating process, simply for further explanation originally The feature and advantage of invention, rather than limiting to the claimed invention, protection scope of the present invention are also not necessarily limited to following Embodiment.
Embodiment 1
A kind of continous way magnetic control sputtering device, including the magnetic control containing vacuum chamber, magnetron sputtering chamber and cooling chamber Sputter stove;
Vacuum chamber is arranged on the side of magnetron sputtering chamber, and first baffle is used between vacuum chamber and magnetron sputtering chamber Valve separates, and first gear plate valve is provided with the first scraper plate, and first gear plate valve is pressed close in scraper plate side, for striking off on first gear plate valve Debris, keep sealing.Encapsulant is provided with first gear plate valve and keeps sealing.
Cooling chamber is arranged on the opposite side of magnetron sputtering chamber, and second gear is used between cooling chamber and magnetron sputtering chamber Plate valve separates, and second gear plate valve is provided with the second scraper plate, and second gear plate valve is pressed close in scraper plate side, for striking off second gear plate valve Debris, keep sealing.Encapsulant is provided with second gear plate valve and keeps sealing.
Vacuum chamber is arranged at the porch of magnetron sputtering stove, and cooling chamber is arranged at the exit of magnetron sputtering stove.
The first guide rail is additionally provided with vacuum chamber, is additionally provided with the second guide rail in magnetron sputtering chamber, in cooling chamber The 3rd guide rail is additionally provided with, the first guide rail, the second guide rail and the 3rd guide rail, the continuous transmission of material can be realized when in use.
The size of the vacuum chamber of the magnetron sputtering stove of the invention is high for the wide * 1000mm of the long * 500mm of 2000mm, and magnetic control splashes The size for penetrating chamber is that the wide * 1000mm of the long * 500mm of 2000mm are high, and the size of cooling chamber is the long wide * of * 500mm of 2000mm 1000mm is high.
Referring to Fig. 1, Fig. 1 is the structure schematic diagram of magnetic control sputtering device provided in an embodiment of the present invention.Wherein, 1 be into Mouth fire door, 2 be vacuum chamber, and 3 be magnetron sputtering chamber, and 4 be cooling chamber, and 5 be outlet fire door, and 6 be first gear plate valve, and 7 are Second gear plate valve, 8 be the first scraper plate, and 9 be the second scraper plate, and 10 be the first guide rail, and 11 be the second guide rail, and 12 be the 3rd guide rail, 13 It is second batch raw material for first raw material, 14,15 be the 3rd batch of raw material.
Embodiment 2
The process of 42H magnet continuous magnetron sputtering aluminium coats
1st, by 42H magnets through degreasing fluid oil removing, after dust technology is cleaned up and dried, vacuum chamber is put into from import fire door It is interior, flapper valve is opened, makes three chambers, vavuum pump is opened and vacuumizes, vacuum 4.0*10-3Pa。
2nd, product to be sent into magnetron sputtering chamber by guide rail, closes two flapper valves, magnetron sputtering chamber is started working, Sputtering current is 10A, time 1.5h, while opens heating, makes temperature constant at 150 DEG C, now second batch product is by entering Mouth fire door is sent into vacuum chamber, is opened vavuum pump, vacuum chamber is vacuumized, vacuum 4.0*10-3Pa。
3. treating that the work of magnetron sputtering chamber is completed, second gear plate valve is opened, the 42H magnets plated are sent into by guide rail Cooling chamber, close second gear plate valve.First gear plate valve is opened, the product in vacuum chamber is sent into magnetron sputtering chamber, closed First gear plate valve is closed, starts magnetron sputtering, conditional synchronization rapid 2, while next batch materials and is sent into vacuum chamber.Opening baffle plate During valve, attached scraper plate can strike off the metal sputtered on flapper valve on flapper valve, so as to ensure that between three chambers Sealing.
4. next batch materials repeat according to above-mentioned 3 steps, product is set to plate required protective coating.Above step weight Multiple operation, reciprocation cycle, so as to realize that production is not stagnated continuously.
The above-mentioned processing step of the present invention is counted, the magnet of same model is produced, in product requirement identical condition Under, the preparation technology of the embodiment of the present invention 2 compares original technique, and the time reduces 50%.
Above to a kind of continous way magnetic control sputtering device and continous way for neodymium iron boron magnetic body plated film provided by the invention The method of magnetron sputtering is described in detail, and specific case used herein is entered to the principle and embodiment of the present invention Elaboration is gone, the explanation of above example is only intended to help the method and its core concept for understanding the present invention, including optimal side Formula, and also cause any person skilled in the art to put into practice the present invention, including manufacture and using any device or be System, and implement the method for any combination.It should be pointed out that for those skilled in the art, this is not being departed from On the premise of inventive principle, some improvement and modification can also be carried out to the present invention, these are improved and modification also falls into the present invention In scope of the claims.The scope of patent protection of the present invention is defined by the claims, and may include this area skill Art personnel it is conceivable that other embodiment.If these other embodiments, which have, is not different from claim character express Structural element, or if they include equivalent structural elements of the character express without essence difference with claim, then this A little other embodiments should also include within the scope of the claims.

Claims (10)

1. a kind of continous way magnetic control sputtering device, it is characterised in that including containing vacuum chamber, magnetron sputtering chamber and cooling chamber The magnetron sputtering stove of room;
The vacuum chamber is arranged on the side of the magnetron sputtering chamber, is used between vacuum chamber and the magnetron sputtering chamber First movable device separates;
The cooling chamber is arranged on the opposite side of the magnetron sputtering chamber, between the cooling chamber and magnetron sputtering chamber Separated with the second movable device;
The vacuum chamber is arranged at the porch of the magnetron sputtering stove, and the cooling chamber is arranged at the magnetron sputtering stove Exit.
2. continous way magnetic control sputtering device according to claim 1, it is characterised in that the first movable device includes Flapper valve or push-pull valve;
The second movable device includes flapper valve or push-pull valve.
3. continous way magnetic control sputtering device according to claim 1, it is characterised in that the first movable device is located at The side of magnetron sputtering chamber is provided with scraper plate;
The side that the second movable device is located at magnetron sputtering chamber is provided with scraper plate.
4. the continous way magnetic control sputtering device according to claims 1 to 3 any one, it is characterised in that the vacuum chamber Interior is additionally provided with first material conveyer;
Second material conveyer is additionally provided with the magnetron sputtering chamber;
3 material conveyer is additionally provided with the cooling chamber.
5. continous way magnetic control sputtering device according to claim 4, it is characterised in that the first material conveyer, It is two or more in second material conveyer and 3 material conveyer, the continuous biography of material can be realized when in use Send.
6. continous way magnetic control sputtering device according to claim 4, it is characterised in that the first material conveyer bag Include the one or more in guide rail, conveyer belt and conveying roller;
The second material conveyer includes the one or more in guide rail, conveyer belt and conveying roller;
The 3 material conveyer includes the one or more in guide rail, conveyer belt and conveying roller.
7. continous way magnetic control sputtering device according to claim 1, it is characterised in that also set up in the magnetron sputtering stove There is encapsulant.
8. continous way magnetic control sputtering device according to claim 1, it is characterised in that the size of the vacuum chamber is The wide * 500~3000mm of the long * 200~3000mm of 1200~4200mm are high;
The size of the magnetron sputtering chamber is that the wide * 500~3000mm of the long * 200~3000mm of 1200~4200mm are high;
The size of the cooling chamber is that the wide * 500~3000mm of the long * 200~3000mm of 1200~4200mm are high.
A kind of 9. method of continous way magnetron sputtering, it is characterised in that comprise the following steps:
1) from the import of magnetron sputtering stove, first raw material is placed in vacuum chamber, opens the first movable device and second Movable device, vacuum chamber, magnetron sputtering chamber are connected with cooling chamber, vacuumized;
2) first raw material is sent into magnetron sputtering chamber, closes the first movable device and the second movable device, surveyed Control sputtering, then by second batch raw material, from the import of magnetron sputtering stove, be sent into vacuum chamber, vacuumized again;
3) the second movable device is opened, first raw material of magnetron sputtering will be completed, cooling chamber is sent into and is cooled down, closed Second movable device, then the first movable device is opened, second batch raw material is sent into magnetron sputtering chamber, closing first can live Dynamic device, carry out observing and controlling again and sputter, the then import by the 3rd batch of raw material from magnetron sputtering stove, be sent into vacuum chamber, the Vacuumized three times;
Repeat the above steps, carry out continous way magnetron sputtering.
10. according to the method for claim 1, it is characterised in that the raw material includes neodymium iron boron magnetic body;
The vacuum vacuumized is (1~9) × 10-3Pa;
The temperature of the magnetron sputtering is 100~400 DEG C
The time of the magnetron sputtering is 1~5h;
The time of the cooling is 0.2~2h.
CN201711267226.8A 2017-12-05 2017-12-05 A kind of method of continous way magnetic control sputtering device and continous way magnetron sputtering Pending CN107779835A (en)

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