CN107768475A - 一种太阳能电池组件 - Google Patents
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Abstract
本发明公开了一种太阳能电池组件,包括太阳能电池和位于太阳能电池背光面下方的上转换模块,所述上转换模块包括从下到上依次叠加的底电极、下接触层、子电池组、发光二极管、上接触层和顶电极,所述底电极和顶电极通过导线连接,所述上转换模块的顶电极透光,所述太阳能电池透光,所述太阳能电池的带隙高于子电池组的带隙,所述发光二极管的带隙高于或等于太阳能电池的带隙。本发明通过背光面的上转换模块将低能量光子转化为高能量光子,提高了太阳能电池效率。
Description
技术领域
本发明涉及太阳能电池领域,尤其涉及一种背面具有上转换模块的太阳能电池。
背景技术
在上个世纪70年代引发的能源危机刺激下,也在空间飞行器能源系统的需求牵引下,光伏技术领域不断取得突破。晶体硅太阳能电池、非晶硅太阳能电池、非晶硅薄膜太阳能电池、III-V族化合物半导体太阳能电池、II-VI族化合物半导体多晶薄膜太阳能电池等,越来越多的太阳能电池技术日趋成熟。光电转换效率的不断提高及制造成本的持续降低,使得光伏技术在空间和地面都得到了广泛的应用。在传统的太阳能电池中,能量小于电池带隙的光子不能被有效地吸收以产生电子—空穴对,因此光电转换效率就受到限制。如果能够将低能量光子转化为高能量光子被太阳能电池吸收,那么电池的效率将会增加。实现将低能量光子转换为高能量光子的一种方法是通过在太阳能电池中引入上转换发光材料。
上转换发光材料是一种在红外或近红外光激发下发出可见光的新型功能材料,即将红外光或近红外光转换成为可见光的材料,将上转换发光材料与太阳能电池相结合,可以扩展太阳能电池光谱的利用范围。然而,当前存在的问题是,上转换发光材料的发光效率普遍较低,这样即使材料吸收谱域宽、吸收强度强,应用于电池中也难以提高电池的光电性能。因此开发一种能够高效地将低能量光子转化为高能量光子的上转换系统,对太阳能电池效率的提高,具有现实意义。
发明内容
发明目的:本发明针对现有技术存在的问题,提供一种太阳能电池组件,通过背光面的上转换模块将低能量光子转化为高能量光子,提高了太阳能电池效率。
技术方案:本发明所述的太阳能电池组件,包括太阳能电池和位于太阳能电池背光面下方的上转换模块,所述上转换模块包括从下到上依次叠加的底电极、下接触层、子电池组、发光二极管、上接触层和顶电极,所述底电极和顶电极通过导线连接,所述上转换模块的顶电极和所述太阳能电池均透光,所述太阳能电池的带隙高于子电池组的带隙,所述发光二极管的带隙高于或等于太阳能电池的带隙。
进一步的,所述太阳能电池包括从下到上依次叠加的底电极、下接触层、背场层、基区、发射区、窗口层、上接触层和顶电极。
作为可选的实施方式,所述子电池组可以是单个子电池或多个子电池,多个子电池之间通过隧道结连接。若所述子电池组包括多个子电池,则多个子电池按照带隙从低到高依次从下到上排列设置。所述子电池具体为InGaAs子电池、InGaAsP子电池、GaAs子电池和Ge子电池中任意一种,包括从下到上依次叠加的背场层、基区、发射区和窗口层。
进一步的,所述太阳能电池的顶电极和底电极为栅状电极或透明导电电极。所述上转换模块的顶电极也为栅状电极或透明导电电极。所述透明导电电极的材料为氧化铟锡、氧化铟锌和石墨烯中任意一种。
有益效果:本发明与现有技术相比,其显著优点是:本发明的上转换模块通过低带隙子电池组与高带隙发光二极管(LED)结合,使用低带隙子电池组驱动高带隙发光二极管,所发出的光被上方的高带隙太阳能电池吸收,转化为电能。与上转换发光材料相比,本发明提出的上转换模块能够更加高效的将低能量光子转化为高能量光子,提高了太阳能电池的转化效率。
附图说明
图1为本发明提供的太阳能电池组件的一个实施例的结构示意图;
图2为图1中太阳能电池的结构示意图;
图3为图1中上转换模块的结构示意图;
图4为本发明提供的太阳能电池组件的另一实施例的结构示意图;
图5为图4中太阳能电池的结构示意图;
图6为图4中上转换模块的结构示意图.
具体实施方式
实施例1
参阅图1,本实施例的太阳能电池组件包括从上到下依次设置的GaInP太阳能电池11和上转换模块12,上转换模块12位于GaInP太阳能电池11的背光面下方。上转换模块12吸收低能量光子,并将低能量光子转换为高能量光子被顶部的GaInP太阳能电池11吸收。
参阅图2,所述GaInP太阳能电池11包括依次设置在底电极111表面的p-GaAs下接触层112、p-AlGaInP背场层113、p-GaInP基区114、n-GaInP发射区115、n-AlInP窗口层116、n-GaAs上接触层117以及顶电极118,其中顶电极118、底电极111为栅状电极或透明导电电极,透明导电电极的材料可以为氧化铟锡、氧化铟锌和石墨烯中任意一种。这样使太阳光能透过GaInP太阳能电池11被上转换模块12吸收,并使GaInP太阳能电池11能够吸收来自上转换模块12的光。
参阅图3,所述上转换模块12包括从下到上依次在底电极121表面的p-GaAs下接触层122、GaAs子电池123、GaInP发光二极管124、p-GaAs上接触层125和顶电极126,顶电极126和底电极121通过外导线127连接,顶电极126为栅状电极或透明导电电极,可以透光。GaAs子电池123包括从下到上设置的p-GaInP背场层1231、p-GaAs基区1232、n-GaAs发射区1233以及n-AlInP窗口层1234。GaInP发光二极管124包括从下到上设置的n-GaInP导电半导体层1241、p-GaInP导电半导体层1242。GaInP发光二极管124的带隙高于GaAs子电池123的带隙,GaInP太阳能电池11的带隙高于GaAs子电池123的带隙。可以理解的,GaInP太阳能电池11、GaAs子电池123也可以为其他类型的电池,例如Ge子电池、InGaAs子电池、InGaAsP子电池,只要满足太阳能电池的带隙高于子电池的带隙即可,GaInP发光二极管124也可以是其他发光二极管,只要满足发光二极管的带隙高于或等于太阳能电池的带隙即可。
实施例2
参阅图4,本实施例的太阳能电池组件包括从上到下依次设置的GaInP太阳能电池21和上转换模块22,上转换模块22位于GaInP太阳能电池21的背光面下方。上转换模块22吸收低能量光子,并将低能量光子转换为高能量光子被顶部的GaInP太阳能电池21吸收。
参阅图5,GaInP太阳能电池21包括依次设置在底电极211表面上的p-GaAs下接触层212、p-AlGaInP背场层213、p-GaInP基区214、n-GaInP发射区215、n-AlInP窗口层216、n-GaAs上接触层217以及顶电极218,其中顶电极218、底电极211为栅状电极或透明导电电极,透明导电电极的的材料可以为氧化铟锡、氧化铟锌及石墨烯中任意一种。这样使太阳光能透过GaInP太阳能电池21被上转换模块22吸收,并使GaInP太阳能电池21能够吸收来自上转换模块22的光。
参阅图6,上转换模块22包括从下到上依次在底电极221表面的p-InP下接触层222、InGaAs子电池223、隧道结224、InGaAsP子电池225、GaInP发光二极管226、p-GaAs上接触层227以及顶电极228,顶电极228和底电极221通过外导线229连接,顶电极228为栅状电极或透明导电电极,可以透光。InGaAs子电池223包括从下到上设置的p-InP背场层2231、p-InGaAs基区2232、n-InGaAs发射区2233、n-InP窗口层2234。隧道结224包括从下到上设置的n型InGaAs隧道层2241、p型InGaAs隧道层2242。InGaAsP子电池225包括从下到上设置的p-InP背场层2251、p-InGaAsP基区2252、n-InGaAsP发射区2253、n-InP窗口层2254。GaInP发光二极管226包括从下到上设置的n-GaInP导电半导体层2261、p-GaInP导电半导体层2262。
其中,GaInP发光二极管226的带隙高于InGaAsP子电池225,InGaAsP子电池225的带隙高于InGaAs子电池223,GaInP太阳能电池21的带隙高于InGaAsP子电池225和InGaAs子电池223。可以理解的,GaInP太阳能电池21、InGaAsP子电池225和InGaAs子电池223也可以为其他类型的电池,子电池组合也可以是三结、四结或更多结的,只要满足太阳能电池21的带隙高于所有子电池,子电池按照带隙从低到高依次从下到上排列设置。GaInP发光二极管226也可以是其他发光二极管,只要满足发光二极管226的带隙高于或等于太阳能电池21的带隙即可。
由于晶格失配,GaInP太阳能电池和InGaAs/InGaAsP子电池不能直接生长成三结太阳能电池,只能通过晶片键合技术实现,但由于晶片键合工艺较为复杂,成本较大,本实施例则直接通过上转换模块解决了晶格不匹配问题,对提高太阳能电池效率意义重大。
虽然本发明是参照其示例性的实施例被具体描述和显示的,但不能说明本发明的保护范围仅限于上述几种方法,凡是由此得到启示或本领域技术人员在此基础上经过简单替换的技术方案均属本发明保护范围。
Claims (9)
1.一种太阳能电池组件,其特征在于:包括太阳能电池和位于太阳能电池背光面下方的上转换模块,所述上转换模块包括从下到上依次叠加的底电极、下接触层、子电池组、发光二极管、上接触层和顶电极,所述底电极和顶电极通过导线连接,所述上转换模块的顶电极和所述太阳能电池均透光,所述太阳能电池的带隙高于子电池组的带隙,所述发光二极管的带隙高于或等于太阳能电池的带隙。
2.根据权利要求1所述的太阳能电池组件,其特征在于:所述太阳能电池包括从下到上依次叠加的底电极、下接触层、背场层、基区、发射区、窗口层、上接触层和顶电极。
3.根据权利要求1所述的太阳能电池组件,其特征在于:所述子电池组包括单个子电池或多个子电池,多个子电池之间通过隧道结连接。
4.根据权利要求3所述的太阳能电池组件,其特征在于:所述子电池包括从下到上依次叠加的背场层、基区、发射区和窗口层。
5.根据权利要求3所述的太阳能电池组件,其特征在于:若所述子电池组包括多个子电池,则多个子电池按照带隙从低到高依次从下到上排列设置。
6.根据权利要求3-5中任意一项所述的太阳能电池组件,其特征在于:所述子电池具体为InGaAs子电池、InGaAsP子电池、GaAs子电池和Ge子电池中任意一种。
7.根据权利要求2所述的太阳能电池组件,其特征在于:所述太阳能电池的顶电极和底电极为栅状电极或透明导电电极。
8.根据权利要求1所述的太阳能电池组件,其特征在于:所述上转换模块的顶电极为栅状电极或透明导电电极。
9.根据权利要求7或8所述的太阳能电池组件,其特征在于:所述透明导电电极的材料为氧化铟锡、氧化铟锌和石墨烯中任意一种。
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