CN107740058B - The preparation method of metal/non-metal laminated film with orthogonal array structure - Google Patents
The preparation method of metal/non-metal laminated film with orthogonal array structure Download PDFInfo
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Abstract
The invention discloses a kind of preparation methods of metal/non-metal laminated film with orthogonal array structure, this method is to prepare metal/non-metal compound structure film by rf magnetron sputtering codeposition technique, realizes a wide range of regulation to metal array size, volume ratio by nonmetallic target/metallic target power ratio condition in strict control technical process；This technical process is environmental-friendly, it is simple and easy, it does not need by template, to substrate without particular/special requirement, the metal/non-metal orthogonal array structure for different shape, size and the crystalline state that can be obtained at room temperature, all there is good application potential and prospect in fields such as optical device, catalysis, precision resistance film, storage, display devices, provide new technical thought for the industrial applications of the laminated film of orthogonal array structure.
Description
Technical field
The present invention relates to a kind of metal/non-metal laminated film and preparation method thereof with orthogonal array structure, belongs to
Metal/non-metal laminated film preparation technical field；Material prepared is used for optical device, catalysis, precision resistance film, deposits
The fields such as storage, display device.
Background technique
Metal/non-metal laminated film with orthogonal array structure in optical device, catalysis, precision resistance film, deposit
The fields such as storage, display device suffer from extensive purposes, but it is always a problem that it, which is efficiently prepared,.Electron beam lithography, template are auxiliary
Helping the technologies such as electro-deposition, laser direct-writing, focused ion beam micro Process to be used to attempt preparation has orthogonal array structural membrane, but
Electron beam lithography, laser direct-writing and focused ion beam micro Process these three methods take time and effort, and are unable to large area preparation, and
Its abnormal high cost is also difficult to receive.From a cost perspective, template assist in electrodeposition, especially porous alumina formwork
The electro-deposition of auxiliary is the most feasible, however the aperture size of porous alumina formwork itself limits the feature of laminated film
Size, usual this method is suitable for preparing several hundred nanometers to several microns of array structure, and preparation process is cumbersome, equally can not
Realize large area preparation.It is prepared although current someone starts to explore using the method for vapor deposition, due to ceramics-
The complexity of metal array structure is difficult to control the size and crystallinity of nano-wire array, and the ceramic-metal battle array being typically prepared
Ceramic Array in array structure be it is amorphous, this also significantly limits the extensive use of ceramic-metal laminated film.Cause
This, needs quickly and easily to obtain ceramic-metal array film in industry, and keep its array sizes and crystalline state controllable
Method.
The Chinese patent literature of Publication No. CN105242334A discloses a kind of response of wide range ultra-fast nonlinear optical
Multi-layer cermet film and preparation method thereof, the metallic cermet films are prepared using physical vaporous deposition, though
Array sizes with array structure, but prepared by it are only in 1.5nm or so, and obtained Ceramic Array is amorphous knot
Structure is unable to get crystalline state ceramics.Meanwhile ceramics with metallic target sputtering power than excessively high, be 6~20, a high proportion of ceramics original
Son can interfere with the atomic arrangement of metal array, cause defect in metal array more, and then influence the quality of laminated film.
Summary of the invention
It is an object of the invention to overcome the above-mentioned prior art, a kind of gold with orthogonal array structure is provided
Category/nonmetallic laminated film preparation method, this method is to pass through RF magnetron co-sputtering skill by strict control technological parameter
Art prepares metal/non-metal compound structure film；Compared to the traditional handicraft that needs are prepared by template, such as electrochemical deposition
Or chemical liquid deposition method, this technique take environmental-friendly physical gas phase deposition technology, do not need by template, to substrate
Without particular/special requirement.And it at normal temperature, can be obtained by that size is controllable, crystallinity is controllable, tool by strict control sedimentary condition
There is the metal/non-metal laminated film of orthogonal array structure.
In order to achieve the above objectives, the present invention is achieved by the following scheme:
The preparation method of metal/non-metal laminated film with orthogonal array structure, comprising the following steps:
1) substrate is cleaned by ultrasonic and is dried, then by its clamping on sample tray, and be sent into sputtering chamber
Body；
2) metal targets and nonmetallic target are mounted on the target position with unbalanced magnetic field, and sputter chamber is evacuated to
Scheduled background vacuum；
3) using high-purity argon gas as working gas, at a predetermined temperature by controlling nonmetallic target and metallic target power ratio range
For 1.25:1~5:1, splash-proofing sputtering metal target and nonmetallic target are deposited on material atom in the tray sample of certain speed rotation；
4) tray sample is taken out after cooling to room temperature with the furnace in sputter chamber, and metal of the acquisition with orthogonal array structure/
Nonmetallic laminated film.
Preferably, the substrate is appointing in p type single crystal silicon, sapphire, electro-conductive glass, PET, organic glass or quartz plate
It anticipates one kind.
Preferably, the metallic target material includes copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminium；The nonmetallic target material packet
Include oxide, nitride or carbide；The oxide be aluminium oxide, zinc oxide, silica, titanium oxide or tungsten oxide, it is described
Nitride is silicon nitride, aluminium nitride, titanium nitride or zirconium nitride, and the carbide is silicon carbide, titanium carbide, tungsten carbide or carbonization
Chromium.
Preferably, in step 2), background vacuum is 1 × 10-5~3 × 10-4Pa。
Preferably, in step 3), high-purity argon gas purity is 99.999%, and operating air pressure is 0.1~0.3Pa；What is sputtered is pre-
Determining temperature is 25~100 DEG C.
Preferably, in step 3), the sputtering process, metallic target and nonmetallic target are sputtered using radio-frequency power supply, wherein
The sputtering power range of metallic target is 20~40W, and the sputtering power range of nonmetallic target is 45~130W.
Preferably, in step 3), the sputtering process, added back bias voltage be -80~-100V, sputtering time be 60~
120min。
Preferably, in step 3), the rotational velocity of tray sample is 10 degrees seconds.
Preferably, in step 4), the cooling of sample carries out under the argon atmosphere of 0.1~0.3Pa.
Preferably, in obtained laminated film, metal array is nanocrystalline structure, and nonmetallic array is nanocrystalline structure
Or non crystalline structure；Metal array and nonmetallic array are staggered, and array sizes are in 2~11nm, metal array volume ratio 20%
~70%.
The present invention has the metal/non-metal laminated film and preparation method thereof of orthogonal array structure, is splashed altogether using magnetic control
Technology is penetrated, the orderly deposition of metal, nonmetallic materials material atom is realized directly in substrate, to obtain with orthogonal array
The metal/non-metal three-dimensional structure of structure.
Compared with prior art, present invention has the advantage that
1, the present invention is by using the lower nonmetallic preparation that array film can be realized with metallic target power ratio, can be with
The defects of metal array is reduced, laminated film quality is improved.The laminated film with orthogonal array structure that the present invention obtains
The size of middle metal array and the modification scope of volume ratio are wider, and metal array size can regulate and control from 2nm to 11nm, metal
Array volume ratio can regulate and control from 20% to 70%；And Ceramic Array is either nanocrystalline structure can be non crystalline structure again；
2, for the present invention to base material without particular/special requirement, common base material can be used as substrate, and not need template,
It can large area preparation；
3, environmental-friendly physical gas phase deposition technology of the present invention, preparation that can be in situ have orthogonal array
The metal/non-metal laminated film of structure, equipment operation is convenient, high-efficient, high reliablity, low in cost, and passes through technique
The regulation to array details can be realized in stringent regulation, has in fields such as optical device, catalysis, precision resistance film, storages
Good application prospect.
Detailed description of the invention
Fig. 1 (a)-(c) is Al2O3The transmission electron microscope photo and its electron diffraction pattern of/Cu laminated film；
Fig. 2 (a)-(c) is Al2O3The transmission electron microscope photo and its electron diffraction pattern of/Ag laminated film；
Fig. 3 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiN/Cu laminated film 1；
Fig. 4 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiN/Cu laminated film 2；
Fig. 5 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiC/Cu laminated film 1；
Fig. 6 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiC/Cu laminated film 2；
Fig. 7 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of ZnO/Cu laminated film.
Specific embodiment
The technology of the present invention content is described in further detail below in conjunction with drawings and examples, but the present embodiment and is not had to
It is all using similar method and its similar variation of the invention in the limitation present invention, protection scope of the present invention should all be included in.
The present invention has the preparation method of the metal/non-metal laminated film of orthogonal array structure, comprising the following steps:
1) substrate that material is p type single crystal silicon, sapphire, electro-conductive glass, PET, organic glass or quartz plate is surpassed
Sound washing and drying treatment then by its clamping on sample tray, and is sent into sputter chamber；
It 2) will include that material includes aluminium oxide, aoxidizes for copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminum metal target and material
The oxide of zinc, titanium oxide or tungsten oxide, including silicon nitride, aluminium nitride, titanium nitride, zirconium nitride, or including silicon carbide, carbonization
The nonmetallic target of the carbide of titanium, tungsten carbide or chromium carbide is mounted on the target position with unbalanced magnetic field, and by sputter chamber
Scheduled background vacuum is evacuated to 1 × 10-5~3 × 10-4Pa；
It 3) is 99.999% high-purity argon gas as working gas using purity, operating air pressure is 0.1~0.3Pa；In predetermined temperature
Degree according to nonmetallic target and metallic target power ratio range is 1.25:1~5:1 splash-proofing sputtering metal target and non-at a temperature of 25~100 DEG C
Metallic target, metallic target and nonmetallic target are sputtered using radio-frequency power supply, and wherein the sputtering power range of metallic target is 20~40W,
The sputtering power range of nonmetallic target is 45~130W, and adding back bias voltage is -80~-100V, sputtering time 90-120min；Make
Material atom is deposited in the tray sample of 10 degrees second speed rotations；
4) tray sample is taken out after cooling to room temperature with the furnace in sputter chamber under the argon atmosphere of 0.1~0.3Pa, obtains
Metal/non-metal laminated film with orthogonal array structure.
Specific embodiment is given below to further illustrate the method for the present invention.
Embodiment 1
Al2O3The preparation of/Cu orthogonal array laminated film: selecting p type single crystal silicon, (resistivity is about 9-15 Ω cm, thereon
Having a layer thickness is the oxide layer of 2 ± 0.5nm) it is substrate, the successively ultrasound 15min in acetone, dehydrated alcohol, deionized water,
Carry out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after, be sent into sputter chamber.Then by copper
Target (purity 99.999%) and aluminium oxide target (purity 99.99%) are separately mounted on non-equilibrium magnetic controlled target position, by sputter chamber
Background vacuum be evacuated to 2 × 10-4Start coating operation after Pa.It is passed through Ar (purity 99.999%) gas and keeps operating air pressure
In 0.15Pa, cosputtering is carried out to copper target and aluminium oxide target using radio-frequency power supply, the power of aluminium oxide and copper be respectively 120W and
40W, ceramics, metallic target power ratio be 3:1, underlayer temperature be 25 DEG C, open tray sample rotation switch, make substrate its with 10
The speed of degrees second rotates, the back bias voltage of application -80V, sputtering time 90min in sputtering process.Argon gas of the sample in 0.1Pa
It is cooling under atmosphere.
The metal array volume ratio of gained laminated film is 50%, film thickness 110nm；By the visible Al of Fig. 1 (a)2O3It is handed over Cu
The array verticality that mistake arrangement is formed is high；It is 3nm or so by the visible array sizes of Fig. 1 (b)；By the visible Al of Fig. 1 (c)2O3Array is
Non crystalline structure, Cu array are nanocrystalline structure.
Embodiment 2
Al2O3The preparation of/Ag orthogonal array laminated film: selection electro-conductive glass be substrate, successively acetone, dehydrated alcohol,
Ultrasound 15min, carries out drying and processing in a nitrogen atmosphere in deionized water, after drying by substrate clamping on sample tray after,
It is sent into sputter chamber.Then silver-colored target (purity 99.999%) and aluminium oxide target (purity 99.99%) are separately mounted to non-equilibrium
On magnetic control target position, the background vacuum of sputter chamber is evacuated to 1 × 10-4Start coating operation after Pa.It is passed through Ar (purity
99.999%) it gas and keeps operating air pressure in 0.10Pa, cosputtering, oxidation is carried out to silver-colored target and aluminium oxide target using radio-frequency power supply
The power of aluminium and silver is respectively 120W and 30W, and ceramics, metallic target power ratio are 4:1, and underlayer temperature is 100 DEG C, opens tray sample
Rotation switch, making substrate, it is rotated with the speed of 10 degrees seconds, and the back bias voltage of application -100V, sputtering time are in sputtering process
60min.Sample is cooling under the argon atmosphere of 0.3Pa.
The metal array volume ratio of gained laminated film is 45%, film thickness 60nm；By the visible Al of Fig. 2 (a)2O3It is handed over Ag
The array verticality that mistake arrangement is formed is high；It is 4nm or so by the visible array sizes of Fig. 2 (b)；By the visible Al of Fig. 2 (c)2O3Array is
Non crystalline structure, Ag array are nanocrystalline structure.
Embodiment 3
The preparation of SiN/Cu orthogonal array laminated film: selection quartz plate be substrate, successively in acetone, dehydrated alcohol, go
Ultrasound 15min, carries out drying and processing in a nitrogen atmosphere in ionized water, after drying by substrate clamping on sample tray after, send
Enter sputter chamber.Then copper target (purity 99.999%) and silicon nitride target (purity 99.99%) are separately mounted to Nonequilibrium magnetic
It controls on target position, the background vacuum of sputter chamber is evacuated to 1 × 10-5Start coating operation after Pa.It is passed through Ar (purity
99.999%) it gas and keeps operating air pressure in 0.10Pa, cosputtering, nitridation is carried out to copper target and silicon nitride target using radio-frequency power supply
The power of silicon and copper is respectively 100W and 20W, and ceramics, metallic target power ratio are 5:1, and underlayer temperature is 60 DEG C, opens tray sample
Rotation switch, making substrate, it is rotated with the speed of 10 degrees seconds, and the back bias voltage of application -80V, sputtering time are in sputtering process
90min.Sample is cooling under the argon atmosphere of 0.2Pa.
The metal array volume ratio of gained laminated film is 70%, film thickness 52nm；Interlocked by Fig. 3 (a) visible SiN and Cu
The array verticality formed of arranging is high；It is 3~5nm or so by the visible array sizes of Fig. 3 (b)；It is by the visible SiN array of Fig. 3 (c)
Non crystalline structure, Cu array are nanocrystalline structure.
Embodiment 4
The preparation of SiN/Cu orthogonal array laminated film: selection PET is substrate, successively in acetone, dehydrated alcohol, deionization
Ultrasound 15min, carries out drying and processing in a nitrogen atmosphere in water, after drying by substrate clamping on sample tray after, feeding is splashed
Penetrate cavity.Then copper target (purity 99.999%) and silicon nitride target (purity 99.99%) are separately mounted to non-equilibrium magnetic controlled target
On position, the background vacuum of sputter chamber is evacuated to 8 × 10-5Start coating operation after Pa.It is passed through Ar (purity 99.999%)
Gas simultaneously keeps operating air pressure in 0.15Pa, carries out cosputtering to copper target and silicon nitride target using radio-frequency power supply, silicon nitride and copper
Power is respectively 130W and 40W, and ceramics, metallic target power ratio are 3.25:1, and underlayer temperature is 40 DEG C, opens the rotation of tray sample
Switch, making substrate, it is rotated with the speed of 10 degrees seconds, the back bias voltage of application -80V, sputtering time 90min in sputtering process.
Sample is cooling under the argon atmosphere of 0.2Pa.
The metal array volume ratio of gained laminated film is 45%, film thickness 168nm；It is handed over by Fig. 4 (a) visible SiN and Cu
The array verticality that mistake arrangement is formed is high；It is 3nm or so by the visible array sizes of Fig. 4 (b)；It is by the visible SiN array of Fig. 4 (c)
Non crystalline structure, Cu array are nanocrystalline structure.
Embodiment 5
The preparation of SiC/Cu orthogonal array laminated film: selection sapphire be substrate, successively in acetone, dehydrated alcohol, go
Ultrasound 15min, carries out drying and processing in a nitrogen atmosphere in ionized water, after drying by substrate clamping on sample tray after, send
Enter sputter chamber.Then copper target (purity 99.999%) and carbonization silicon target (purity 99.99%) are separately mounted to Nonequilibrium magnetic
It controls on target position, the background vacuum of sputter chamber is evacuated to 3 × 10-4Start coating operation after Pa.It is passed through Ar (purity
99.999%) it gas and keeps operating air pressure in 0.3Pa, cosputtering, carbonization is carried out to copper target and silicon nitride target using radio-frequency power supply
The power of silicon and copper is respectively 85W and 20W, and ceramics, metallic target power ratio are 4.25:1, and underlayer temperature is 60 DEG C, opens sample
The rotation of disk switchs, and making substrate, it is rotated with the speed of 10 degrees seconds, the back bias voltage of application -90V, sputtering time in sputtering process
For 120min.
The metal array volume ratio of gained laminated film is 25%, film thickness 74nm；Interlocked by Fig. 5 (a) visible SiC and Cu
The array verticality formed of arranging is high；It is 4nm or so by the visible array sizes of Fig. 5 (b)；It is non-by the visible SiC array of Fig. 5 (c)
Crystal structure, Cu array are nanocrystalline structure.
Embodiment 6
The preparation of SiC/Cu orthogonal array laminated film: selection P-type silicon be substrate, successively acetone, dehydrated alcohol, go from
Ultrasound 15min, carries out drying and processing in a nitrogen atmosphere in sub- water, after drying by substrate clamping on sample tray after, be sent into
Sputter chamber.Then copper target (purity 99.999%) and carbonization silicon target (purity 99.99%) are separately mounted to non-equilibrium magnetic controlled
On target position, the background vacuum of sputter chamber is evacuated to 2 × 10-5Start coating operation after Pa.It is passed through Ar (purity
99.999%) it gas and keeps operating air pressure in 0.2Pa, cosputtering, carbonization is carried out to copper target and silicon nitride target using radio-frequency power supply
The power of silicon and copper is respectively 120W and 40W, and ceramics, metallic target power ratio are 3:1, and underlayer temperature is 25 DEG C, opens tray sample
Rotation switch, making substrate, it is rotated with the speed of 10 degrees seconds, and the back bias voltage of application -100V, sputtering time are in sputtering process
60min。
The metal array volume ratio of gained laminated film is 58%, film thickness 148nm；It is handed over by Fig. 6 (a) visible SiC and Cu
The array verticality that mistake arrangement is formed is high；It is 7~11nm or so by the visible array sizes of Fig. 6 (b)；It is SiC gusts visible by Fig. 6 (c)
It is classified as non crystalline structure, Cu array is nanocrystalline structure.
Embodiment 7
The preparation of ZnO/Cu orthogonal array laminated film: selection organic glass be substrate, successively acetone, dehydrated alcohol,
Ultrasound 15min, carries out drying and processing in a nitrogen atmosphere in deionized water, after drying by substrate clamping on sample tray after,
It is sent into sputter chamber.Then copper target (purity 99.999%) and zinc oxide target (purity 99.99%) are separately mounted to non-equilibrium
On magnetic control target position, the background vacuum of sputter chamber is evacuated to 1 × 10-5Start coating operation after Pa.It is passed through Ar (purity
99.999%) it gas and keeps operating air pressure in 0.3Pa, cosputtering, oxidation is carried out to copper target and zinc oxide target using radio-frequency power supply
The power of zinc and copper is respectively 45W and 40W, and ceramics, metallic target power ratio are 1.25:1, and underlayer temperature is 100 DEG C, opens sample
The rotation of disk switchs, and making substrate, it is rotated with the speed of 10 degrees seconds, the back bias voltage of application -100V, sputtering time in sputtering process
For 90min.
The metal array volume ratio of gained laminated film is 20%, film thickness 135nm；It is handed over by Fig. 7 (a) visible ZnO and Cu
The array verticality that mistake arrangement is formed is high；It is 2nm or so by the visible array sizes of Fig. 7 (b)；It is by the visible ZnO array of Fig. 7 (c)
Nanocrystalline structure, Cu array are also nanocrystalline structure.
The metallic target material that the present invention uses is not limited to above-mentioned copper, ag material, can also using gold, platinum, ruthenium, iridium, rhodium or
Aluminum metal target；The nonmetallic target material that the present invention uses is not limited to above-mentioned material, can also use silica, titanium oxide, oxygen
Change tungsten, aluminium nitride, titanium nitride, zirconium nitride, titanium carbide, tungsten carbide or the nonmetallic target of chromium carbide.
Following table 1 give the method for the present invention preparation metal/non-metal laminated film with orthogonal array structure and
The comparison of case in other open source literatures.
Table 1
| Ceramic/metal power ratio | Volume ratio shared by metal | Metal array size | Ceramic/metal structure | |
| Comparative example | 6~20 | 3%~50% | 1~2nm | Amorphous/crystal |
| Embodiment 1 | 3 | ~50% | 3nm | Amorphous/nanocrystalline |
| Embodiment 2 | 4 | ~45% | 4nm | Amorphous/nanocrystalline |
| Embodiment 3 | 5 | ~70% | 3~5nm | Amorphous/nanocrystalline |
| Embodiment 4 | 3.25 | ~45% | 3nm | Amorphous/nanocrystalline |
| Embodiment 5 | 4.25 | ~25% | 4nm | Amorphous/nanocrystalline |
| Embodiment 6 | 3 | ~58% | 7~11nm | Amorphous/nanocrystalline |
| Embodiment 7 | 1.25 | ~20% | 2nm | It is nanocrystalline/nanocrystalline |
It is multiple to can be seen that the metal/non-metal with orthogonal array structure obtained through the method for the present invention from above-mentioned comparison
The metal array size for closing film can be adjusted from 2nm to 11nm, and metal array volume ratio can adjust to 70% from 20%, expand
The upper limit of regulation is opened up, while obtained nonmetallic array has expanded metal/non-either amorphous, can be nanocrystalline again
The existing forms of metallic vertical array structure.The only preparation with lower ceramet target power output than array film can be realized,
The defects of metal array can be reduced, laminated film quality is improved.What this preparation process obtained has orthogonal array structure
Metal/non-metal laminated film has good in fields such as optical device, catalysis, precision resistance film, storage, display devices
Application prospect.
It is understood that although the present invention has been disclosed in the preferred embodiments as above, above-described embodiment not to
Limit the present invention.For any person skilled in the art, without departing from the scope of the technical proposal of the invention,
The technology contents that may be by the disclosure above make many possible changes and modifications to technical solution of the present invention, or are revised as
The equivalent embodiment of equivalent variations.Therefore, anything that does not depart from the technical scheme of the invention, according to the technical essence of the invention
Any simple modifications, equivalents, and modifications made to the above embodiment still fall within the model of technical solution of the present invention protection
In enclosing.
Claims (8)
1. the preparation method of the metal/non-metal laminated film with orthogonal array structure, which is characterized in that including following step
It is rapid:
1) substrate is cleaned by ultrasonic and is dried, then by its clamping on sample tray, and be sent into sputter chamber；
2) metal targets and nonmetallic target are mounted on the target position with unbalanced magnetic field, and sputter chamber are evacuated to predetermined
Background vacuum；
3) using high-purity argon gas as working gas, it is by the nonmetallic target of control and metallic target power ratio range at a predetermined temperature
1.25:1~5:1, splash-proofing sputtering metal target and nonmetallic target are deposited on material atom in the tray sample of certain speed rotation；
4) tray sample is taken out after cooling to room temperature with the furnace in sputter chamber, obtains the metal/non-gold with orthogonal array structure
Belong to laminated film；
In step 2), background vacuum is 1 × 10-5~3 × 10-4Pa；
In step 3), operating air pressure is 0.1~0.3Pa；The predetermined temperature of sputtering is 25~100 DEG C；
In step 3), the sputtering process, added back bias voltage is -80~-100V, and sputtering time is 60~120min.
2. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is that the substrate is any one in p type single crystal silicon, sapphire, electro-conductive glass, PET, organic glass or quartz plate.
3. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is that the metallic target material includes copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminium；The nonmetallic target material include oxide,
Nitride or carbide；The oxide is aluminium oxide, zinc oxide, silica, titanium oxide or tungsten oxide, and the nitride is nitrogen
SiClx, aluminium nitride, titanium nitride or zirconium nitride, the carbide are silicon carbide, titanium carbide, tungsten carbide or chromium carbide.
4. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is, in step 3), high-purity argon gas purity is 99.999%.
5. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is, in step 3), the sputtering process, metallic target and nonmetallic target are sputtered using radio-frequency power supply, wherein metallic target
Sputtering power range is 20~40W, and the sputtering power range of nonmetallic target is 45~130W.
6. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is, in step 3), the rotational velocity of tray sample is 10 degrees seconds.
7. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is, in step 4), the cooling of sample carries out under the argon atmosphere of 0.1~0.3Pa.
8. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, special
Sign is, in obtained laminated film, metal array is nanocrystalline structure, and nonmetallic array is nanocrystalline structure or amorphous knot
Structure；Metal array and nonmetallic array are staggered, and array sizes are in 2~11nm, metal array volume ratio 20%~70%.
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