CN107740058A - The preparation method of metal/non-metal laminated film with orthogonal array structure - Google Patents
The preparation method of metal/non-metal laminated film with orthogonal array structure Download PDFInfo
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Abstract
The invention discloses a kind of preparation method of the metal/non-metal laminated film with orthogonal array structure, this method is to prepare metal/non-metal compound structure film by rf magnetron sputtering codeposition technique, by strictly controlling nonmetallic target/metallic target power ratio condition in technical process to realize a wide range of regulation and control to metal array size, volume ratio；This technical process is environment-friendly, it is simple and easy, need not be by template, to substrate without particular/special requirement, it is the metal/non-metal orthogonal array structure of available different shape, size and crystalline state at room temperature, all there is good application potential and prospect in fields such as optics, catalysis, precision resistance film, storage, display devices, new technical thought is provided for the industrial applications of the laminated film of orthogonal array structure.
Description
Technical field
The present invention relates to a kind of metal/non-metal laminated film with orthogonal array structure and preparation method thereof, belong to
Metal/non-metal laminated film preparing technical field；Prepared material is used for optics, catalysis, precision resistance film, deposited
The fields such as storage, display device.
Background technology
Metal/non-metal laminated film with orthogonal array structure in optics, catalysis, precision resistance film, deposit
The fields such as storage, display device suffer from extensive purposes, but it is always a problem that it, which is efficiently prepared,.Beamwriter lithography, template are auxiliary
The technologies such as electro-deposition, laser direct-writing, focused ion beam micro Process are helped to be used for attempting to prepare that there is orthogonal array structural membrane, but
Beamwriter lithography, laser direct-writing and focused ion beam micro Process these three methods take time and effort, it is impossible to and it is prepared by large area, and
Its abnormal high cost is also difficult to receive.From a cost perspective, template assist in electrodeposition, especially porous alumina formwork
The electro-deposition of auxiliary is the most feasible, but the aperture size of porous alumina formwork in itself limits the feature of laminated film
Size, usual this method is applied to prepare hundreds of nanometers to several microns of array structure, and preparation process is cumbersome, equally can not
Realize prepared by large area.Although at present someone start explore prepared using the method for vapour deposition, due to ceramics-
The complexity of metal array structure, it is difficult to the size and crystallinity of nano-wire array are controlled, and the ceramic-metal battle array being typically prepared
Ceramic Array in array structure is amorphous, and this also significantly limit the extensive use of ceramic-metal laminated film.Cause
This, needs badly in industry and quickly and easily obtains ceramic-metal array film, and makes its array sizes and crystalline state controllable
Method.
Publication No. CN105242334A Chinese patent literature discloses a kind of wide range ultra-fast nonlinear optical response
Multi-layer cermet film and preparation method thereof, described metallic cermet films are prepared using physical vaporous deposition, though
With array structure, but the array sizes prepared by it are only in 1.5nm or so, and resulting Ceramic Array is amorphous knot
Structure, crystalline state ceramics can not be obtained.Meanwhile ceramics with metallic target sputtering power than too high, be 6~20, a high proportion of ceramics original
Son can interfere with the atomic arrangement of metal array, cause defect in metal array more, and then influence the quality of laminated film.
The content of the invention
A kind of the shortcomings that it is an object of the invention to overcome above-mentioned prior art, there is provided gold with orthogonal array structure
The preparation method of category/nonmetallic laminated film, this method is by strictly controlling technological parameter, passes through RF magnetron co-sputtering skill
Art prepares metal/non-metal compound structure film；Compared to needs by template come the traditional handicraft prepared, such as electrochemical deposition
Or chemical liquid deposition method, this technique take environment-friendly physical gas phase deposition technology, it is not necessary to by template, to substrate
Without particular/special requirement.And at normal temperatures, by strictly controlling sedimentary condition can be obtained by, size is controllable, crystallinity is controllable, tool
There is the metal/non-metal laminated film of orthogonal array structure.
To reach above-mentioned purpose, the present invention is achieved using following technical scheme：
The preparation method of metal/non-metal laminated film with orthogonal array structure, comprises the following steps：
1) substrate is cleaned by ultrasonic and drying process, then by its clamping on sample tray, and is sent into sputtering chamber
Body；
2) metal targets and nonmetallic target are arranged on the target position with unbalanced magnetic field, and sputter chamber is evacuated to
Predetermined background vacuum；
3) using high-purity argon gas as working gas, at a predetermined temperature by controlling nonmetallic target and metallic target power ratio range
For 1.25:1~5:1, splash-proofing sputtering metal target and nonmetallic target are deposited on material atom with the platter of certain speed rotation；
4) platter is taken out after cooling to room temperature with the furnace in sputter chamber, and metal of the acquisition with orthogonal array structure/
Nonmetallic laminated film.
Preferably, the substrate is appointing in p type single crystal silicon, sapphire, electro-conductive glass, PET, lucite or quartz plate
Meaning is a kind of.
Preferably, the metallic target material includes copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminium；The nonmetallic target material bag
Include oxide, nitride or carbide；The oxide is aluminum oxide, zinc oxide, silica, titanium oxide or tungsten oxide, described
Nitride is silicon nitride, aluminium nitride, titanium nitride or zirconium nitride, and the carbide is carborundum, titanium carbide, tungsten carbide or carbonization
Chromium.
Preferably, in step 2), background vacuum is 1 × 10-5~3 × 10-4Pa。
Preferably, in step 3), high-purity argon gas purity is 99.999%, and operating air pressure is 0.1~0.3Pa；What is sputtered is pre-
Constant temperature degree is 25~100 DEG C.
Preferably, in step 3), the sputter procedure, metallic target and nonmetallic target are sputtered using radio-frequency power supply, wherein
The sputtering power scope of metallic target is 20~40W, and the sputtering power scope of nonmetallic target is 45~130W.
Preferably, in step 3), the sputter procedure, added back bias voltage is -80~-100V, sputtering time is 60~
120min。
Preferably, in step 3), the rotational velocity of platter is 10 degrees seconds.
Preferably, in step 4), being cooled under 0.1~0.3Pa argon gas atmosphere for sample is carried out.
Preferably, in resulting laminated film, metal array is nanocrystalline structure, and nonmetallic array is nanocrystalline structure
Or non crystalline structure；Metal array and nonmetallic array are staggered, and array sizes are in 2~11nm, metal array volume ratio 20%
~70%.
The present invention has metal/non-metal laminated film of orthogonal array structure and preparation method thereof, is splashed altogether using magnetic control
Technology is penetrated, the orderly deposition of metal, nonmetallic materials material atom is directly realized in substrate, so as to obtain with orthogonal array
The metal/non-metal three-dimensional structure of structure.
Compared with prior art, the present invention has the advantage that：
1st, the present invention is the preparation of achievable array film by using relatively low nonmetallic and metallic target power ratio, can be with
The defects of metal array is reduced, improves laminated film quality.The laminated film with orthogonal array structure that the present invention obtains
The size of middle metal array and the modification scope of volume ratio are wider, and metal array size can regulate and control from 2nm to 11nm, metal
Array volume ratio can regulate and control to 70% from 20%；And Ceramic Array not only can be nanocrystalline structure but also can be non crystalline structure；
2nd, for the present invention to base material without particular/special requirement, conventional base material can be used as substrate, and not need template,
Can large area preparation；
3rd, environment-friendly physical gas phase deposition technology of the present invention, preparation that can be in situ have orthogonal array
The metal/non-metal laminated film of structure, equipment operation convenience, efficiency high, reliability are high, cost is cheap, and pass through technique
The regulation and control of row details poised for battle can be achieved in strict regulation and control, have in fields such as optics, catalysis, precision resistance film, storages
Good application prospect.
Brief description of the drawings
Fig. 1 (a)-(c) is Al2O3The transmission electron microscope photo and its electron diffraction pattern of/Cu laminated films；
Fig. 2 (a)-(c) is Al2O3The transmission electron microscope photo and its electron diffraction pattern of/Ag laminated films；
Fig. 3 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiN/Cu laminated films 1；
Fig. 4 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiN/Cu laminated films 2；
Fig. 5 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiC/Cu laminated films 1；
Fig. 6 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of SiC/Cu laminated films 2；
Fig. 7 (a)-(c) is the transmission electron microscope photo and its electron diffraction pattern of ZnO/Cu laminated films.
Embodiment
The technology of the present invention content is described in further detail below in conjunction with drawings and examples, but the present embodiment and not had to
In the limitation present invention, every similarity method using the present invention and its similar change, protection scope of the present invention all should be included in.
The present invention has the preparation method of the metal/non-metal laminated film of orthogonal array structure, comprises the following steps：
1) substrate that material is p type single crystal silicon, sapphire, electro-conductive glass, PET, lucite or quartz plate is surpassed
Sound washing and drying treatment, then by its clamping on sample tray, and it is sent into sputter chamber；
2) it is that copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminum metal target and material include aluminum oxide, oxidation that will include material
The oxide of zinc, titanium oxide or tungsten oxide, including silicon nitride, aluminium nitride, titanium nitride, zirconium nitride, or including carborundum, carbonization
The nonmetallic target of carbide of titanium, tungsten carbide or chromium carbide is arranged on the target position with unbalanced magnetic field, and by sputter chamber
Predetermined background vacuum is evacuated to 1 × 10-5~3 × 10-4Pa；
3) it is 99.999% high-purity argon gas as working gas using purity, operating air pressure is 0.1~0.3Pa；In pre- constant temperature
Spend to be 1.25 according to nonmetallic target and metallic target power ratio range at a temperature of 25~100 DEG C:1~5:1 splash-proofing sputtering metal target and non-
Metallic target, metallic target and nonmetallic target are sputtered using radio-frequency power supply, and wherein the sputtering power scope of metallic target is 20~40W,
The sputtering power scope of nonmetallic target is 45~130W, and it is -80~-100V, sputtering time 90-120min to add back bias voltage；Make
Material atom is deposited on in the platter of 10 degrees second speed rotations；
4) platter is taken out after cooling to room temperature with the furnace in sputter chamber under 0.1~0.3Pa argon gas atmosphere, obtains
Metal/non-metal laminated film with orthogonal array structure.
Specific embodiment is given below to further illustrate the inventive method.
Embodiment 1
Al2O3The preparation of/Cu orthogonal array laminated films：From p type single crystal silicon, (resistivity is about 9-15 Ω cm, thereon
Have the oxide layer that a layer thickness is 2 ± 0.5nm) it is substrate, the ultrasonic 15min in acetone, absolute ethyl alcohol, deionized water successively,
Carry out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after, be sent into sputter chamber.Then by copper
Target (purity 99.999%) and aluminum oxide target (purity 99.99%) are separately mounted on non-equilibrium magnetic controlled target position, by sputter chamber
Background vacuum be evacuated to 2 × 10-4Start coating operation after Pa.It is passed through Ar (purity 99.999%) gas and keeps operating air pressure
In 0.15Pa, cosputtering is carried out to copper target and aluminum oxide target using radio-frequency power supply, the power of aluminum oxide and copper be respectively 120W and
40W, ceramics, metallic target power ratio are 3:1, underlayer temperature be 25 DEG C, open platter rotation switch, make substrate its with 10
The speed of degrees second rotates, application -80V back bias voltage, sputtering time 90min in sputter procedure.Argon gas of the sample in 0.1Pa
Cooled down under atmosphere.
The metal array volume ratio of gained laminated film is 50%, thickness 110nm；By the visible Al of Fig. 1 (a)2O3Handed over Cu
The array perpendicularity that mistake arrangement is formed is high；It is 3nm or so by the visible array sizes of Fig. 1 (b)；By the visible Al of Fig. 1 (c)2O3Array is
Non crystalline structure, Cu arrays are nanocrystalline structure.
Embodiment 2
Al2O3The preparation of/Ag orthogonal array laminated films：Be substrate from electro-conductive glass, successively acetone, absolute ethyl alcohol,
Ultrasonic 15min in deionized water, carries out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after,
It is sent into sputter chamber.Then silver-colored target (purity 99.999%) and aluminum oxide target (purity 99.99%) are separately mounted to non-equilibrium
On magnetic control target position, the background vacuum of sputter chamber is evacuated to 1 × 10-4Start coating operation after Pa.It is passed through Ar (purity
99.999%) gas and operating air pressure is kept in 0.10Pa, cosputtering, oxidation are carried out to silver-colored target and aluminum oxide target using radio-frequency power supply
The power of aluminium and silver is respectively 120W and 30W, and ceramics, metallic target power ratio are 4:1, underlayer temperature is 100 DEG C, opens platter
Rotation switch, making substrate, it is rotated with the speed of 10 degrees seconds, and application -100V back bias voltage, sputtering time are in sputter procedure
60min.Sample cools down under 0.3Pa argon gas atmosphere.
The metal array volume ratio of gained laminated film is 45%, thickness 60nm；By the visible Al of Fig. 2 (a)2O3Handed over Ag
The array perpendicularity that mistake arrangement is formed is high；It is 4nm or so by the visible array sizes of Fig. 2 (b)；By the visible Al of Fig. 2 (c)2O3Array is
Non crystalline structure, Ag arrays are nanocrystalline structure.
Embodiment 3
The preparation of SiN/Cu orthogonal array laminated films：Be substrate from quartz plate, successively in acetone, absolute ethyl alcohol, go
Ultrasonic 15min in ionized water, carries out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after, send
Enter sputter chamber.Then copper target (purity 99.999%) and silicon nitride target (purity 99.99%) are separately mounted to Nonequilibrium magnetic
Control on target position, the background vacuum of sputter chamber is evacuated to 1 × 10-5Start coating operation after Pa.It is passed through Ar (purity
99.999%) gas and operating air pressure is kept in 0.10Pa, cosputtering, nitridation are carried out to copper target and silicon nitride target using radio-frequency power supply
The power of silicon and copper is respectively 100W and 20W, and ceramics, metallic target power ratio are 5:1, underlayer temperature is 60 DEG C, opens platter
Rotation switch, making substrate, it is rotated with the speed of 10 degrees seconds, and application -80V back bias voltage, sputtering time are in sputter procedure
90min.Sample cools down under 0.2Pa argon gas atmosphere.
The metal array volume ratio of gained laminated film is 70%, thickness 52nm；Interlocked by Fig. 3 (a) visible SiN and Cu
The array perpendicularity formed of arranging is high；It is 3~5nm or so by the visible array sizes of Fig. 3 (b)；It is by the visible SiN arrays of Fig. 3 (c)
Non crystalline structure, Cu arrays are nanocrystalline structure.
Embodiment 4
The preparation of SiN/Cu orthogonal array laminated films：It is substrate from PET, successively in acetone, absolute ethyl alcohol, deionization
Ultrasonic 15min in water, carries out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after, feeding is splashed
Penetrate cavity.Then copper target (purity 99.999%) and silicon nitride target (purity 99.99%) are separately mounted to non-equilibrium magnetic controlled target
On position, the background vacuum of sputter chamber is evacuated to 8 × 10-5Start coating operation after Pa.It is passed through Ar (purity 99.999%)
Gas simultaneously keeps operating air pressure in 0.15Pa, and cosputtering is carried out to copper target and silicon nitride target using radio-frequency power supply, silicon nitride and copper
Power is respectively 130W and 40W, and ceramics, metallic target power ratio are 3.25:1, underlayer temperature is 40 DEG C, opens the rotation of platter
Switch, making substrate, it is rotated with the speed of 10 degrees seconds, application -80V back bias voltage, sputtering time 90min in sputter procedure.
Sample cools down under 0.2Pa argon gas atmosphere.
The metal array volume ratio of gained laminated film is 45%, thickness 168nm；Handed over by Fig. 4 (a) visible SiN and Cu
The array perpendicularity that mistake arrangement is formed is high；It is 3nm or so by the visible array sizes of Fig. 4 (b)；It is by the visible SiN arrays of Fig. 4 (c)
Non crystalline structure, Cu arrays are nanocrystalline structure.
Embodiment 5
The preparation of SiC/Cu orthogonal array laminated films：Be substrate from sapphire, successively in acetone, absolute ethyl alcohol, go
Ultrasonic 15min in ionized water, carries out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after, send
Enter sputter chamber.Then copper target (purity 99.999%) and carbonization silicon target (purity 99.99%) are separately mounted to Nonequilibrium magnetic
Control on target position, the background vacuum of sputter chamber is evacuated to 3 × 10-4Start coating operation after Pa.It is passed through Ar (purity
99.999%) gas and operating air pressure is kept in 0.3Pa, cosputtering, carbonization are carried out to copper target and silicon nitride target using radio-frequency power supply
The power of silicon and copper is respectively 85W and 20W, and ceramics, metallic target power ratio are 4.25:1, underlayer temperature is 60 DEG C, opens sample
The rotation switch of disk, making substrate, it is rotated with the speed of 10 degrees seconds, application -90V back bias voltage, sputtering time in sputter procedure
For 120min.
The metal array volume ratio of gained laminated film is 25%, thickness 74nm；Interlocked by Fig. 5 (a) visible SiC and Cu
The array perpendicularity formed of arranging is high；It is 4nm or so by the visible array sizes of Fig. 5 (b)；It is non-by the visible SiC arrays of Fig. 5 (c)
Crystal structure, Cu arrays are nanocrystalline structure.
Embodiment 6
The preparation of SiC/Cu orthogonal array laminated films：Be substrate from P-type silicon, successively acetone, absolute ethyl alcohol, go from
Ultrasonic 15min in sub- water, carries out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after, be sent into
Sputter chamber.Then copper target (purity 99.999%) and carbonization silicon target (purity 99.99%) are separately mounted to non-equilibrium magnetic controlled
On target position, the background vacuum of sputter chamber is evacuated to 2 × 10-5Start coating operation after Pa.It is passed through Ar (purity
99.999%) gas and operating air pressure is kept in 0.2Pa, cosputtering, carbonization are carried out to copper target and silicon nitride target using radio-frequency power supply
The power of silicon and copper is respectively 120W and 40W, and ceramics, metallic target power ratio are 3:1, underlayer temperature is 25 DEG C, opens platter
Rotation switch, making substrate, it is rotated with the speed of 10 degrees seconds, and application -100V back bias voltage, sputtering time are in sputter procedure
60min。
The metal array volume ratio of gained laminated film is 58%, thickness 148nm；Handed over by Fig. 6 (a) visible SiC and Cu
The array perpendicularity that mistake arrangement is formed is high；It is 7~11nm or so by the visible array sizes of Fig. 6 (b)；By the visible SiC battle arrays of Fig. 6 (c)
Non crystalline structure is classified as, Cu arrays are nanocrystalline structure.
Embodiment 7
The preparation of ZnO/Cu orthogonal array laminated films：Be substrate from lucite, successively acetone, absolute ethyl alcohol,
Ultrasonic 15min in deionized water, carries out drying and processing in a nitrogen atmosphere, after drying by substrate clamping on sample tray after,
It is sent into sputter chamber.Then copper target (purity 99.999%) and zinc oxide target (purity 99.99%) are separately mounted to non-equilibrium
On magnetic control target position, the background vacuum of sputter chamber is evacuated to 1 × 10-5Start coating operation after Pa.It is passed through Ar (purity
99.999%) gas and operating air pressure is kept in 0.3Pa, cosputtering, oxidation are carried out to copper target and zinc oxide target using radio-frequency power supply
The power of zinc and copper is respectively 45W and 40W, and ceramics, metallic target power ratio are 1.25:1, underlayer temperature is 100 DEG C, opens sample
The rotation switch of disk, making substrate, it is rotated with the speed of 10 degrees seconds, application -100V back bias voltage, sputtering time in sputter procedure
For 90min.
The metal array volume ratio of gained laminated film is 20%, thickness 135nm；Handed over by Fig. 7 (a) visible ZnO and Cu
The array perpendicularity that mistake arrangement is formed is high；It is 2nm or so by the visible array sizes of Fig. 7 (b)；It is by the visible ZnO arrays of Fig. 7 (c)
Nanocrystalline structure, Cu arrays are also nanocrystalline structure.
The metallic target material that the present invention uses is not limited to above-mentioned copper, ag material, can also use gold, platinum, ruthenium, iridium, rhodium or
Aluminum metal target；The nonmetallic target material that the present invention uses is not limited to above-mentioned material, can also use silica, titanium oxide, oxygen
Change tungsten, aluminium nitride, titanium nitride, zirconium nitride, titanium carbide, tungsten carbide or the nonmetallic target of chromium carbide.
Table 1 below give the inventive method preparation metal/non-metal laminated film with orthogonal array structure and
The contrast of case in other open source literatures.
Table 1
| Ceramic/metal power ratio | Volume ratio shared by metal | Metal array size | Ceramic/metal structure | |
| Comparative example | 6~20 | 3%~50% | 1~2nm | Amorphous/crystal |
| Embodiment 1 | 3 | ~50% | 3nm | Amorphous/nanocrystalline |
| Embodiment 2 | 4 | ~45% | 4nm | Amorphous/nanocrystalline |
| Embodiment 3 | 5 | ~70% | 3~5nm | Amorphous/nanocrystalline |
| Embodiment 4 | 3.25 | ~45% | 3nm | Amorphous/nanocrystalline |
| Embodiment 5 | 4.25 | ~25% | 4nm | Amorphous/nanocrystalline |
| Embodiment 6 | 3 | ~58% | 7~11nm | Amorphous/nanocrystalline |
| Embodiment 7 | 1.25 | ~20% | 2nm | It is nanocrystalline/nanocrystalline |
The metal/non-metal with orthogonal array structure obtained through the inventive method is can be seen that from above-mentioned contrast to answer
The metal array size of conjunction film can adjust to 11nm, metal array volume ratio from 2nm and can adjust to 70%, expand from 20%
The upper limit of regulation and control is opened up, while obtained nonmetallic array not only can be amorphous but also can be nanocrystalline, expand metal/non-
The existing forms of metallic vertical array structure.Only with relatively low ceramet target power output than being the preparation that array film can be achieved,
The defects of metal array can be reduced, improves laminated film quality.What this preparation technology obtained has orthogonal array structure
Metal/non-metal laminated film has good in fields such as optics, catalysis, precision resistance film, storage, display devices
Application prospect.
It is understood that although the present invention is disclosed as above with preferred embodiment, but above-described embodiment and it is not used to
Limit the present invention.For any those skilled in the art, without departing from the scope of the technical proposal of the invention,
The technology contents that may be by the disclosure above make many possible changes and modifications to technical solution of the present invention, or are revised as
The equivalent embodiment of equivalent variations.Therefore, every content without departing from technical solution of the present invention, the technical spirit according to the present invention
To any simple modifications, equivalents, and modifications made for any of the above embodiments, the model that technical solution of the present invention is protected is still fallen within
In enclosing.
Claims (10)
1. the preparation method of the metal/non-metal laminated film with orthogonal array structure, it is characterised in that including following step
Suddenly：
1) substrate is cleaned by ultrasonic and drying process, then by its clamping on sample tray, and is sent into sputter chamber；
2) metal targets and nonmetallic target are arranged on the target position with unbalanced magnetic field, and sputter chamber is evacuated to predetermined
Background vacuum；
3) using high-purity argon gas as working gas, at a predetermined temperature by controlling nonmetallic target and the metallic target power ratio range to be
1.25:1~5:1, splash-proofing sputtering metal target and nonmetallic target are deposited on material atom with the platter of certain speed rotation；
4) platter is taken out after cooling to room temperature with the furnace in sputter chamber, obtains metal/non-gold with orthogonal array structure
Belong to laminated film.
2. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is that the substrate is any one in p type single crystal silicon, sapphire, electro-conductive glass, PET, lucite or quartz plate.
3. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is that the metallic target material includes copper, silver, gold, platinum, ruthenium, iridium, rhodium or aluminium；The nonmetallic target material include oxide,
Nitride or carbide；The oxide is aluminum oxide, zinc oxide, silica, titanium oxide or tungsten oxide, and the nitride is nitrogen
SiClx, aluminium nitride, titanium nitride or zirconium nitride, the carbide are carborundum, titanium carbide, tungsten carbide or chromium carbide.
4. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is, in step 2), background vacuum is 1 × 10-5~3 × 10-4Pa。
5. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is, in step 3), high-purity argon gas purity is 99.999%, and operating air pressure is 0.1~0.3Pa；The predetermined temperature of sputtering is
25~100 DEG C.
6. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is, in step 3), the sputter procedure, metallic target and nonmetallic target are sputtered using radio-frequency power supply, wherein metallic target
Sputtering power scope is 20~40W, and the sputtering power scope of nonmetallic target is 45~130W.
7. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is, in step 3), the sputter procedure, added back bias voltage is -80~-100V, and sputtering time is 60~120min.
8. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is, in step 3), the rotational velocity of platter is 10 degrees seconds.
9. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, it is special
Sign is, in step 4), being cooled under 0.1~0.3Pa argon gas atmosphere for sample is carried out.
10. the preparation method of the metal/non-metal laminated film according to claim 1 with orthogonal array structure, its
It is characterised by, in resulting laminated film, metal array is nanocrystalline structure, and nonmetallic array is nanocrystalline structure or amorphous
Structure；Metal array and nonmetallic array are staggered, and array sizes are in 2~11nm, metal array volume ratio 20%~70%.
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| CN115233159A (en) * | 2022-08-05 | 2022-10-25 | 中国科学院光电技术研究所 | Low-roughness and dielectric constant controllable silver film and preparation method thereof |
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