CN107733376B - 一种基于反馈和电流复用可拓展高频带宽的低噪放电路 - Google Patents
一种基于反馈和电流复用可拓展高频带宽的低噪放电路 Download PDFInfo
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- CN107733376B CN107733376B CN201711086578.3A CN201711086578A CN107733376B CN 107733376 B CN107733376 B CN 107733376B CN 201711086578 A CN201711086578 A CN 201711086578A CN 107733376 B CN107733376 B CN 107733376B
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- mos tube
- tube
- resistor
- capacitor
- pole
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- 239000003990 capacitor Substances 0.000 claims abstract description 39
- 238000013461 design Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000012795 verification Methods 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
Description
通信制式 | 覆盖频率范围(MHz) |
2100MHz频段NB-IoT | 1920~1980,2170~2200 |
数字对讲通信 | 376~389,402.5~417.5 |
GSM900 | 885~915,930~960 |
GSM1800 | 1710~1785,1805~1880 |
WCDMA | 1920~1980,2110~2170 |
WiFi/蓝牙 | 2402~2480 |
Claims (1)
Priority Applications (1)
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CN201711086578.3A CN107733376B (zh) | 2017-11-07 | 2017-11-07 | 一种基于反馈和电流复用可拓展高频带宽的低噪放电路 |
Applications Claiming Priority (1)
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CN201711086578.3A CN107733376B (zh) | 2017-11-07 | 2017-11-07 | 一种基于反馈和电流复用可拓展高频带宽的低噪放电路 |
Publications (2)
Publication Number | Publication Date |
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CN107733376A CN107733376A (zh) | 2018-02-23 |
CN107733376B true CN107733376B (zh) | 2024-06-11 |
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CN201711086578.3A Active CN107733376B (zh) | 2017-11-07 | 2017-11-07 | 一种基于反馈和电流复用可拓展高频带宽的低噪放电路 |
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CN (1) | CN107733376B (zh) |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101895265A (zh) * | 2010-08-24 | 2010-11-24 | 复旦大学 | 一种全差分cmos多模低噪声放大器 |
CN101924524A (zh) * | 2010-08-25 | 2010-12-22 | 复旦大学 | 一种带有片上有源Balun的差分CMOS多模低噪声放大器 |
CN102497167A (zh) * | 2011-12-09 | 2012-06-13 | 电子科技大学 | 一种基于电感补偿的射频超宽带低噪声放大器 |
CN203368404U (zh) * | 2013-03-28 | 2013-12-25 | 中国矿业大学 | 一种高增益低噪声放大器 |
CN104660185A (zh) * | 2015-02-01 | 2015-05-27 | 北京工业大学 | 一种低功耗超宽带低噪声放大器 |
CN105375890A (zh) * | 2014-08-20 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | 低噪声放大器 |
CN207460104U (zh) * | 2017-11-07 | 2018-06-05 | 杭州城芯科技有限公司 | 一种基于反馈和电流复用可拓展高频带宽的低噪放电路 |
-
2017
- 2017-11-07 CN CN201711086578.3A patent/CN107733376B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101895265A (zh) * | 2010-08-24 | 2010-11-24 | 复旦大学 | 一种全差分cmos多模低噪声放大器 |
CN101924524A (zh) * | 2010-08-25 | 2010-12-22 | 复旦大学 | 一种带有片上有源Balun的差分CMOS多模低噪声放大器 |
CN102497167A (zh) * | 2011-12-09 | 2012-06-13 | 电子科技大学 | 一种基于电感补偿的射频超宽带低噪声放大器 |
CN203368404U (zh) * | 2013-03-28 | 2013-12-25 | 中国矿业大学 | 一种高增益低噪声放大器 |
CN105375890A (zh) * | 2014-08-20 | 2016-03-02 | 中芯国际集成电路制造(上海)有限公司 | 低噪声放大器 |
CN104660185A (zh) * | 2015-02-01 | 2015-05-27 | 北京工业大学 | 一种低功耗超宽带低噪声放大器 |
CN207460104U (zh) * | 2017-11-07 | 2018-06-05 | 杭州城芯科技有限公司 | 一种基于反馈和电流复用可拓展高频带宽的低噪放电路 |
Non-Patent Citations (2)
Title |
---|
2~5GHz宽带CMOS低噪声放大器设计;程远垚;蒋品群;宋树祥;;半导体技术;20160703(第07期);全文 * |
Modeling and Distributed Provisioning in 10–40–100-Gb/s Multirate Wavelength Switched Optical Networks;Nicola Sambo等;《 Journal of Lightwave Technology》;20110303;全文 * |
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CN107733376A (zh) | 2018-02-23 |
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Inventor after: Wang Xiaofeng Inventor after: Li Guoru Inventor after: Zhou Suping Inventor after: Li Haoming Inventor after: Wang Tengjia Inventor after: Chen Xubin Inventor after: Shen Yupeng Inventor before: Wang Xiaofeng Inventor before: Li Guoru Inventor before: Liu Jiarui Inventor before: Zhou Suping Inventor before: Li Haoming Inventor before: Wang Tengjia Inventor before: Chen Xubin Inventor before: Shen Yupeng |
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