CN107731956B - Method for controlling preparation process of thin-film solar cell absorption layer - Google Patents
Method for controlling preparation process of thin-film solar cell absorption layer Download PDFInfo
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- 238000010521 absorption reaction Methods 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 230000003287 optical effect Effects 0.000 claims abstract description 72
- 238000004886 process control Methods 0.000 claims abstract description 5
- 229910052755 nonmetal Inorganic materials 0.000 claims description 53
- 238000009826 distribution Methods 0.000 claims description 48
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 30
- 238000006243 chemical reaction Methods 0.000 claims description 15
- 238000012544 monitoring process Methods 0.000 claims description 12
- 238000001514 detection method Methods 0.000 claims description 11
- 239000010408 film Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 238000004364 calculation method Methods 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 239000000523 sample Substances 0.000 claims description 5
- 238000001883 metal evaporation Methods 0.000 claims description 4
- 230000008054 signal transmission Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000004044 response Effects 0.000 abstract description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 238000005070 sampling Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 238000004876 x-ray fluorescence Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- PCRGAMCZHDYVOL-UHFFFAOYSA-N copper selanylidenetin zinc Chemical compound [Cu].[Zn].[Sn]=[Se] PCRGAMCZHDYVOL-UHFFFAOYSA-N 0.000 description 1
- WILFBXOGIULNAF-UHFFFAOYSA-N copper sulfanylidenetin zinc Chemical compound [Sn]=S.[Zn].[Cu] WILFBXOGIULNAF-UHFFFAOYSA-N 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000009123 feedback regulation Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
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- 238000011897 real-time detection Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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Abstract
The invention discloses a thin-film solar cell absorption layer preparation process control method, which realizes process control through an input device, a signal acquisition device and a signal feedback control device, and comprises the following steps: s1, setting input control variables and calibration quantities on the input device according to the production parameter requirements; s2, setting a signal acquisition device to acquire the optical signal of the input device and transmitting the optical signal to a signal feedback control device; s3, converting the optical signal into output control variable by the signal feedback control device, comparing the output control variable with the standard quantity, judging and forming an analog signal instruction and transmitting the analog signal instruction to the input device; s4, the input device judges and adjusts the input control variable according to the analog signal command, and repeats the steps S2 and S3. The process control method provided by the invention realizes the closed-loop control of the production process, automatically adjusts the parameters in real time, has high response speed, realizes the control of the uniformity of the absorption layer, ensures the stability and the accuracy of the process and improves the yield of the battery chip.
Description
Technical Field
The invention relates to the field of thin film solar cells, and relates to a method for controlling a preparation process of an absorption layer of a multi-component thin film solar cell.
Background
The thin-film solar cell is green and environment-friendly, and has wide market prospect as a second-generation solar technology to replace the traditional crystalline silicon cell. In the thin-film solar cell technology, a multi-component semiconductor is generally used as an absorption layer, such as CIGSSe (copper indium gallium selenide), CIGS (copper indium gallium selenide), CZTS (copper zinc tin sulfide), CZTSe (copper zinc tin selenide), and the like. The key to the scale preparation of the absorption layer of the thin-film solar cell is as follows: 1. realizing the atomic ratio and gradient distribution of each element of the absorption layer; 2. the atomic ratio and gradient distribution of each element of the absorption layer are accurately and automatically controlled.
In the existing industrialized absorption layer film-forming preparation process, the mainstream technical route is a multi-component co-evaporation and sputtering selenization method. The realization and control principle of the atomic ratio and the gradient distribution of each element of the absorption layer is as follows: according to the thickness of the absorbing layer film, the element atom ratio and the gradient distribution requirement, presetting metal sputtering or evaporation sources of different proportions of each distribution layer according to a simulation model. Controlling the actual value of each input variable to be close to a set value, sampling according to a certain frequency, and detecting the quantity ratio of each element on the total absorption layer and the distribution uniformity of each element on the substrate off line.
The essence of the existing film forming preparation process is that input control variables are used for online control and adjustment, the element atomic ratio of an actual film layer and the gradient distribution of each film layer are not detected and adjusted in real time, but only obtained through offline detection with certain frequency, but the existing general detection method such as X-ray fluorescence spectrum only can obtain the quantity ratio of each element on the total absorption layer, cannot measure the element quantity ratio of each distribution film layer on the absorption layer, cannot obtain accurate gradient distribution, cannot adjust uniformity, and is an imperfect control method with slow response.
Therefore, the closed-loop control method which can detect output control variables such as the element atomic ratio, the gradient distribution and the like of each distribution film layer of the absorption layer in real time on line and feed back and adjust input control variables such as the sputtering power, the evaporation rate and the like of each sputtering source or evaporation source in real time to accurately control the element atomic ratio and the gradient distribution in the thickness direction of the absorption layer is very significant for the scale preparation of the absorption layer of the thin-film solar cell.
Disclosure of Invention
The invention aims to provide a control method of a preparation process of an absorption layer of a thin-film solar cell, and solves a closed-loop control method of online real-time detection and synchronous accurate control.
In order to solve the technical problems, the invention adopts the following technical scheme:
the invention relates to a method for controlling a process for preparing an absorption layer of a thin-film solar cell, which realizes the control of the process for preparing the absorption layer of the solar cell through an input device, a signal acquisition device and a signal feedback control device, and comprises the following steps: s1, the input device comprises a metal source and a nonmetal source, and input control variables of the metal source and the nonmetal source of each distribution layer are respectively set according to the requirements of the thickness of the absorption layer film of the thin-film solar cell and the gradient distribution of elements, and calibration values of output control variables of each distribution layer are set; s2, the signal acquisition device comprises a longitudinal optical detector and a transverse optical detector, the longitudinal optical detector acquires optical signals of the metal elements of the metal source and the nonmetal elements of the nonmetal source of the distribution layer, and the transverse optical detector acquires optical signals of the nonmetal elements and the metal elements accumulated by each distribution layer and transmits the optical signals to the signal feedback control device; s3, the signal feedback control device is provided with a signal conversion and feedback unit and a control unit, the signal conversion and feedback unit converts the received optical signal into an output control variable through calculation processing and transmits the output control variable to the control unit, the control unit judges the deviation between the output control variable and the output control variable calibration value set by the input device and compares the output control variable with the output control variable calibration value set by the input device, and the signal conversion and feedback unit converts the judgment result into an analog signal instruction to be transmitted to the input device; s4, if the deviation between the output control variable value and the output control variable calibration value is judged to be in the process allowable deviation range in the step S3, the output analog signal instruction keeps the input control variable unchanged, otherwise, the input device resets the input control variable according to the analog signal instruction, and the steps S2 and S3 are repeated until the deviation between the output control variable value and the output control variable calibration value is in the process allowable deviation range. The signal acquisition device comprises but is not limited to various detectors based on atomic absorption spectrum and atomic emission spectrum principles; the input control variable prepared by the solar cell absorption layer is set through the input device, the signal acquisition device continuously monitors the content of metal elements and non-metal elements on the solar cell absorption layer and the uniformity of the non-metal elements, the optical intensity signal output by the signal acquisition device is transmitted to the signal feedback device, the signal feedback device converts the output light intensity analog signal into an output control variable to be compared with a standard value, an analog signal command is formed according to the comparison result and transmitted to the input device so as to adjust the input control variable, and the input device, the signal acquisition device and the signal conversion and feedback device form a closed-loop monitoring system, so that the online real-time monitoring and the adjustment of the input control variable are realized, the sampling and off-line detection are not needed, and the production efficiency and the production quality are improved.
Further, the metal source comprises a metal sputtering source and a metal evaporation source, and the non-metal source comprises a non-metal evaporation source. The invention adopts a common solar cell absorbing layer preparation device, and is suitable for the production and use of similar products.
Still further, the nonmetal source is provided with a longitudinal input unit, and the transverse optical detector collects optical signals of nonmetal elements of the longitudinal input unit. The vertical input unit is arranged on the nonmetal source, so that the spraying range of nonmetal elements on the surface of the absorption layer of the solar cell is expanded, the distribution uniformity of the nonmetal elements on the absorption layer is improved, meanwhile, the distribution conditions of the metal elements and the nonmetal elements of each distribution layer are monitored and fed back in real time through the transverse optical detector, and the window or the angular displacement controller of the vertical input unit and the nonmetal source comprises but is not limited to a general stepping motor and a servo motor.
Still further, the transverse optical detector is provided with 3 detection probes which respectively correspond to the upper part, the middle part and the lower part of the monitoring longitudinal input unit. The transverse optical detector is used for monitoring the distribution uniformity of the non-metal elements, and because the non-metal elements enter the film coating cavity in a steam form, the non-uniform temperature of the upper part, the middle part and the lower part of the absorption layer easily causes the non-metal elements to be distributed unevenly, so that 3 detection probes are arranged to correspondingly detect the upper part, the middle part and the lower part of the longitudinal input unit, the accuracy of a monitoring result is ensured, and the quality of a product is improved.
Still further, the input control variable of the metal source is defined as the sputtering power or evaporation rate of different metal proportions of each distribution layer, the input control variable of the non-metal source is defined as the valve opening degree of each distribution layer, and the input control variable of the longitudinal input unit is defined as the opening degree of each distribution layer opening window.
Still further, the signal feedback control device comprises a signal feedback control device alpha and a signal feedback control device beta, the signal feedback control device alpha receives the optical signal collected by the longitudinal optical detector and converts the optical signal into an output control variable through calculation processing, and the output control variable is defined as Rp（k）=
In the formula, W is the optical signal value of the non-metal element i, WmIs the optical signal value, R, of the metal element jp(k)Is the ratio of the optical signals of the non-metal element and the metal element.
Still further, the signal feedback control device beta receives the optical signal collected by the transverse optical detector, and converts the optical signal into an output control variable through calculation processing, wherein the output control variable is defined as ΔTB=Wt-Wb， ∆CE=Wm-
(Wt+Wb) Δ in the formulaTBThe signal intensity of the non-metallic elements at the two ends of the longitudinal output device is ΔCEIs the intensity deviation of the non-metallic element signal at the middle part and the two ends of the longitudinal output device, WtFor the value of the optical signal of the non-metallic element at the top of the longitudinal output device, WbIs the value of the optical signal of the non-metallic element at the bottom of the longitudinal output device, WmThe optical signal value of the non-metal element in the middle of the longitudinal output device.
Still further, the signal feedback control device alpha calculates and converts the optical signal value collected by the longitudinal optical detector into an actual output control variable Rp（k）Comparing with a standard value, converting the comparison result into an analog signal instruction, feeding back the analog signal instruction to a metal source to adjust the sputtering power or the evaporation rate, adjusting the opening of a valve of a non-metal evaporation source, and calculating and converting an optical intensity signal value acquired by a transverse optical detector into an actual output control variable Δ by a signal feedback control device betaTBAnCEAnd respectively comparing the control signals with the output control variable calibration values, converting the comparison result into an analog signal instruction, feeding the analog signal instruction back to the longitudinal input unit, and adjusting and controlling the uniformity of the opening degree of the opening window.
Still further, the signal feedback control device α and the signal feedback control device β are provided with a control unit, and the control unit controls a signal transmission deviation generated by the signal feedback control device α and the signal feedback control device β in a feedback adjustment process. The control unit performs PI control on fluctuation in the adjustment process of the signal feedback unit alpha and the signal feedback unit beta by setting a gain threshold, an integral and a sampling period, so that the response speed is improved, and a steady-state error is eliminated. The signal feedback unit alpha, the signal feedback unit beta and the control unit comprise but are not limited to a single chip microcomputer, an AD/DA data acquisition converter, software simulation control and the like.
Compared with the prior art, the invention has the beneficial technical effects that:
first, closed-loop control, easy to operate. The input control variable and the output control variable calibration value are set by an input device, optical signals of metal elements and nonmetal elements are collected by a signal collection device and transmitted to a signal feedback control device, a signal conversion and feedback unit of the signal feedback control device performs signal conversion on the signals, the control unit performs analysis and judgment on the converted signals, and the signal conversion and feedback unit forms an analog regulation signal from an analysis result and feeds the analog regulation signal back to the input device to form a closed loop circulation control system; the realization and control of the atomic proportion and the gradient distribution of each element in the preparation process of the absorption layer of the existing solar cell need to control the input variable actual value to be close to the calibrated value through personnel, the production operation is complex and tedious, the invention can realize the synchronous operation of production, monitoring and adjustment through the setting of process parameters, the operation steps are simplified, and the production efficiency is improved.
And secondly, the process parameters are automatically adjusted in real time, and the response speed is high. The invention forms a closed-loop control system, the signal acquisition device acquires optical intensity signals of metal elements and nonmetal elements of a product in real time, the signal feedback control device converts and analyzes the signals acquired in real time and feeds the signals back to the input device, the process parameters are adjusted, an operator does not need to sample at certain time intervals and perform off-line detection, the process parameters are adjusted according to the detection result, the response speed of finding and solving the product quality problem of a production line is improved, and the inferior product rate is reduced.
Thirdly, the gradient distribution and uniformity control of the solar cell absorption layer are realized, and the quality of the product is improved. The scale preparation of the solar cell absorption layer is generally multi-step film formation, the existing process adopts X-ray fluorescence spectrum detection for off-line detection, only the element quantity ratio and the distribution uniformity on the total absorption layer can be measured, the element quantity ratio and the distribution uniformity on each distribution layer cannot be monitored and adjusted, and the element gradient distribution in the thickness direction of the absorption layer cannot be monitored and adjusted, so that the reject ratio of the product is high; the invention adopts a detection instrument based on atomic absorption spectrum and atomic emission spectrum principles, sets longitudinal monitoring and transverse monitoring, longitudinally monitors the content of metal elements and non-metal elements in each absorption layer and transversely detects the uniformity of the non-metal elements, realizes the control of the element quantity ratio and the element distribution uniformity of the absorption layer of the solar cell, and improves the quality of products.
Drawings
The invention is further described in the following description with reference to the drawings.
FIG. 1 is a schematic diagram of a control method of a thin film solar cell absorption layer preparation process according to the present invention;
FIG. 2 is an atomic distribution diagram of an absorption layer of the method for controlling the preparation process of the absorption layer of the thin film solar cell.
Description of reference numerals: 11. a source of metal; 12. a non-metal source; 21. a longitudinal optical detector; 22. a transverse optical detector; 31. a signal feedback control device alpha; 32. a signal feedback control device beta; 4. a control unit.
Detailed Description
As shown in fig. 1 and fig. 2, a method for controlling a process for preparing an absorption layer of a thin film solar cell is characterized in that: the process control method is controlled by an input device, a signal acquisition device and a signal feedback control device, and comprises the following specific implementation steps:
s1, arranging 3 equidistant and parallel metal sources 11 in a coating cavity, wherein the metal sources are intermediate-frequency twin copper indium gallium rotary targets, the bottom between the metal sources 11 is provided with a non-metal source 12, the non-metal source is a selenium tank, a nozzle of the non-metal source 12 is connected to a longitudinal input device 13 through a manifold, the longitudinal input device 13 is arranged in the coating cavity, sputtering power of the metal source 11 in different metal proportions of each distribution layer is set to be 15kw according to the thickness of an absorption layer film of a thin-film solar cell and the requirement of element gradient distribution, the transmission rate of a coating substrate is 25 inches/minute, the opening degree of a valve of the non-metal source 12 in each distribution layer is 42%, the opening degree of the longitudinal input device 13 in each distribution layer is set to be 61%, and input control quantity calibration values are respectively set;
s2, arranging a longitudinal optical detector 21 to collect optical signals of copper indium gallium sputtered by a metal source of a distribution layer and selenium evaporated by a nonmetal source, wherein the monitoring position is the middle position of an absorption layer of the solar cell; the transverse optical detector 22 is provided with 3 probes which respectively correspond to the upper part, the middle part and the lower part of the monitoring longitudinal output device 13 and collect optical signals of non-metal elements and metal elements accumulated in each distribution layer, the longitudinal optical detector 21 transmits the collected optical signals to the signal feedback control device alpha 31, and the transverse optical detector transmits the optical signals to the signal feedback control device beta 32.
S3, the signal feedback control device alpha 31 passes the received optical signal through the signal conversion formula Rp（k）=
The calculation is converted into output control variable and the output control variable R of each distribution layerp（k）Comparing the calibration values, the signal feedback control device beta 32 passing the received optical signal through the signal conversion formulaTB=Wt-Wb， ∆CE=Wm-
(Wt+Wb) Calculating and converting the output control variable into an output control variable, comparing the output control variable with the calibration value 0, judging the deviation of the output control variable value and each calibration value, converting the judgment result into an analog signal instruction and transmitting the analog signal instruction to a signal input device;
s4, step S3, the signal feedback control device α 31 and the signal feedback control device β 32 determine that the deviation between the output control variable value and the output control variable calibration value is within 10% of the process tolerance, the input control variables of the metal source 11, the nonmetal source 12 and the longitudinal input unit 13 remain unchanged, if the signal feedback control device determines that the deviation between the output control variable value and the output control variable calibration value is outside 10% of the process tolerance, the metal source 11, the nonmetal source 12 and the longitudinal input unit 13 adjust the input control variables according to the analog signal commands, and step S2 and step S3 are repeated until the thickness of the absorption film layer and the element gradient distribution meet the requirements; the signal feedback control device alpha 31 and the signal feedback control device beta 32 are respectively connected with the control unit 4, and the control unit 4 sets a gain threshold value to be 5 so as to adjust the stride of the feedback regulation deviation of the signal conversion and feedback device; setting the integral value to be 0.3, and carrying out offset correction on the sum of errors of all previous periods; the sampling period is set to be 0.3, the period for the control unit 4 to carry out deviation adjustment on the signal conversion and feedback device is set, the fluctuation of the signal conversion and feedback device is adjusted through the control unit 4, the response speed is improved, and the steady-state error is eliminated.
Therefore, the process control method provided by the invention processes complex multi-input and multi-output nodes, carries out accurate automatic closed-loop control in a relatively simple mode, improves the responsiveness and the accuracy, improves the production efficiency, ensures the product quality and reduces the cost by realizing closed-loop real-time monitoring.
The embodiments described above are merely exemplary embodiments adopted for the principles of the present invention, and the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (5)
1. A method for controlling a preparation process of an absorption layer of a thin film solar cell is characterized by comprising the following steps:
the process control method realizes the control of the preparation process of the solar cell absorption layer through the input device, the signal acquisition device and the signal feedback control device, and comprises the following steps:
s1, the input device comprises a metal source (11) and a nonmetal source (12), input control variables of the metal source (11) and the nonmetal source (12) of each distribution layer are respectively set according to the requirement of the thickness of an absorption layer film of the thin-film solar cell and the element gradient distribution, and output control variable calibration values of each distribution layer are set;
s2, the signal acquisition device comprises a longitudinal optical detector (21) and a transverse optical detector (22), the longitudinal optical detector (21) acquires optical signals of metal elements of the metal source (11) and nonmetal elements of the nonmetal source (12) of the distribution layer, and the transverse optical detector (22) acquires optical signals of the nonmetal elements and the metal elements accumulated by each distribution layer and transmits the optical signals to the signal feedback control device;
s3, the signal feedback control device is provided with a signal conversion and feedback unit and a control unit, the signal conversion and feedback unit converts the received optical signal into an output control variable through calculation processing and transmits the output control variable to the control unit, the control unit judges the deviation between the output control variable and the output control variable calibration value set by the input device and compares the output control variable with the output control variable calibration value set by the input device, and the signal conversion and feedback unit converts the judgment result into an analog signal instruction to be transmitted to the input device;
s4, if the deviation between the output control variable value and the output control variable calibration value is judged to be in the process allowable deviation range in the step S3, the output analog signal instruction keeps the input control variable unchanged, otherwise, the input device resets the input control variable according to the analog signal instruction, and the steps S2 and S3 are repeated until the deviation between the output control variable value and the output control variable calibration value is in the process allowable deviation range;
the input control variable of the metal source (11) is defined as the sputtering power or evaporation rate of different metal proportions of each distribution layer, the input control variable of the nonmetal source (12) is defined as the valve opening degree of each distribution layer, and the input control variable of the longitudinal input unit (13) is defined as the opening degree of each distribution layer opening window;
the signal feedback control device comprises a signal feedback control device alpha (31) and a signal feedback control device beta (32), wherein the signal feedback control device alpha (31) receivesOptical signals collected by the longitudinal optical detector (21) and converted into output control variables by computational processing, the output control variables being defined as Rp（k）=Wi/Wmj，
Wherein the content of the first and second substances,
Wiis the optical signal value of the non-metallic element i;
Wmjis the optical signal value of the metal element j;
Rp(k)is the optical signal ratio of the non-metal element and the metal element;
the signal feedback control device beta (32) receives the optical signal collected by the transverse optical detector (22) and converts the optical signal into an output control variable through calculation processing, and the output control variable is defined as ΔTB=Wt-Wb， ∆CE=Wm-1/2(Wt+Wb)，
Wherein:
∆TBthe signal intensity deviation of the nonmetal elements at the two ends of the longitudinal output device is obtained;
∆CEthe signal intensity deviation of the non-metallic elements at the middle part and the two ends of the longitudinal output device is obtained;
Wtthe optical signal value of the non-metal element at the top of the longitudinal output device;
Wbthe optical signal value of the non-metal element at the bottom of the longitudinal output device;
Wmthe optical signal value of the non-metal element in the middle of the longitudinal output device;
the signal feedback control device alpha (31) calculates and converts an optical signal value collected by the longitudinal optical detector (21) into an actual output control variable Rp（k）Comparing with the calibration value, converting the comparison result into an analog signal command, feeding the analog signal command back to the metal source (11) to adjust the sputtering power or evaporation rate, adjusting the opening of the valve by the non-metal source (12), and calculating and converting the optical intensity signal value acquired by the transverse optical detector (22) into the actual output control variable Δ by the signal feedback control device beta (32)TBAnCERespectively connected with output control transformerAnd comparing the quantity calibration values, converting the comparison result into an analog signal instruction, feeding the analog signal instruction back to the longitudinal input unit (13), and adjusting and controlling the uniformity of the opening degree of the opening window.
2. The method for controlling the preparation process of the absorption layer of the thin-film solar cell according to claim 1, wherein the method comprises the following steps:
the metal source (11) comprises a metal sputtering source and a metal evaporation source, and the nonmetal source (12) comprises a nonmetal evaporation source.
3. The method for controlling the preparation process of the absorption layer of the thin-film solar cell according to claim 1, wherein the method comprises the following steps:
the non-metal source (12) is provided with a longitudinal input unit (13), and the transverse optical detector (22) collects optical signals of non-metal elements of the longitudinal input unit (13).
4. The method for controlling the preparation process of the absorption layer of the thin film solar cell according to claim 1 or claim 3, wherein the method is characterized in that
The transverse optical detector (22) is provided with 3 detection probes which respectively correspond to the upper part, the middle part and the lower part of the monitoring longitudinal input unit (13).
5. The method for controlling the preparation process of the absorption layer of the thin-film solar cell according to claim 1, wherein the method comprises the following steps:
the signal feedback control device alpha (31) and the signal feedback control device beta (32) are provided with a control unit (4), and the control unit (4) controls signal transmission deviation generated in the feedback adjusting process of the signal feedback control device alpha (31) and the signal feedback control device beta (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710800854.1A CN107731956B (en) | 2017-09-07 | 2017-09-07 | Method for controlling preparation process of thin-film solar cell absorption layer |
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| JP2000171840A (en) * | 1998-12-02 | 2000-06-23 | Agency Of Ind Science & Technol | Laminated thin-film optical element and optical control method and optical controller using the same |
| CN105514218A (en) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer |
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| EP2188406B1 (en) * | 2007-09-12 | 2018-03-07 | Flisom AG | Method for manufacturing a compound film |
| US20110089348A1 (en) * | 2008-07-14 | 2011-04-21 | Moshe Finarov | Method and apparatus for thin film quality control |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2000171840A (en) * | 1998-12-02 | 2000-06-23 | Agency Of Ind Science & Technol | Laminated thin-film optical element and optical control method and optical controller using the same |
| CN105514218A (en) * | 2015-12-30 | 2016-04-20 | 中国电子科技集团公司第十八研究所 | Method for on-line monitoring of preparation of copper indium gallium selenide absorption layer |
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