CN107731789A - TFT and COA panels based on COA panels - Google Patents
TFT and COA panels based on COA panels Download PDFInfo
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- CN107731789A CN107731789A CN201710953769.9A CN201710953769A CN107731789A CN 107731789 A CN107731789 A CN 107731789A CN 201710953769 A CN201710953769 A CN 201710953769A CN 107731789 A CN107731789 A CN 107731789A
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- 239000010410 layer Substances 0.000 claims abstract description 328
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 170
- 239000004065 semiconductor Substances 0.000 claims abstract description 61
- 238000002161 passivation Methods 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 239000012044 organic layer Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 14
- 239000004973 liquid crystal related substance Substances 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 abstract description 17
- 241001025261 Neoraja caerulea Species 0.000 description 11
- 239000003086 colorant Substances 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- -1 wherein Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241001062009 Indigofera Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
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Abstract
The embodiment of the present invention provides a kind of thin film transistor (TFT) TFT and COA panel based on COA panels, including：Substrate, grid, passivation layer, semiconductor layer, source electrode, drain electrode, the first photoresist layer, the second photoresist layer and organic layer, wherein, grid is on substrate；Passivation layer covers grid；Semiconductor layer is on passivation layer；Source class and drain electrode are located at semiconductor layer；Region between first photoresist layer covering source class, drain electrode and source electrode and drain electrode；Second photoresist layer is located on the first photoresist layer；Organic layer is located on the second photoresist layer.For improving the protective value to TFT circuit.
Description
Technical field
The present embodiments relate to display technology field, more particularly to a kind of TFT and COA panels based on COA panels.
Background technology
With the continuous development of Display Technique, colored filter and array (Color Filter On Array, abbreviation
COA) panel is widely used.
COA panels include upper substrate, infrabasal plate and liquid crystal layer, wherein, liquid crystal layer is arranged between upper substrate and infrabasal plate.
Include multiple pixels and multiple thin film transistor (TFT)s (Thin Film Transistor, abbreviation TFT), each pixel in infrabasal plate
Including red sub-pixel, green sub-pixels and blue subpixels, wherein, the corresponding TFT of each sub-pixel, pass through TFT's
Conducting can control the display of color in COA panels with disconnection.Each TFT includes photoresist layer corresponding to sub-pixel and TFT electricity
Road, for example, including blue light resistance layer in TFT corresponding to blue subpixels, include red in TFT corresponding to red sub-pixel
Photoresist layer, include green photoresist layer in TFT corresponding to green sub-pixels.In TFT circuit comprise at least source class, grid, drain electrode,
Semiconductor layer etc., wherein, semiconductor layer is particularly susceptible to external influence, for example, semiconductor layer is particularly susceptible to the external world
The influence of the impurity such as light, temperature, gas.
However, in actual application, the photoresist layer of different colours is only capable of absorbing the light of particular color so that part
Light is easy to be irradiated on TFT circuit through photoresist layer, after light is irradiated on TFT circuit, can influence semiconductor layer
Electric conductivity so that leakage current between the source class and grid of TFT circuit be present, and then influence the life-span of TFT circuit.
The content of the invention
The embodiment of the present invention provides a kind of TFT and COA panels based on COA panels, improves the protectiveness to TFT circuit
Energy.
In a first aspect, the embodiment of the present invention provides a kind of thin film transistor (TFT) TFT based on COA panels, including：Substrate, grid
Pole, passivation layer, semiconductor layer, source electrode, drain electrode, the first photoresist layer, the second photoresist layer and organic layer, wherein,
The grid is on the substrate；
The passivation layer covers the grid；
The semiconductor layer is on the passivation layer；
The source class and the drain electrode are located at the semiconductor layer；
First photoresist layer covers the source class, the drain electrode and the region between the source electrode and the drain electrode；
Second photoresist layer is located on first photoresist layer；
The organic layer is located on second photoresist layer.
Provided in an embodiment of the present invention based in the TFT of COA panels, because TFT photoresist layer includes two types
Photoresist layer, different types of photoresist layer has preferable absorbability to different types of light, so, can strengthen TFT
Photoresist layer to the absorbability of multiple color light, enhance barrier property of the photoresist layer in TFT to light, and then can be with
The intensity that light is irradiated to TFT circuit is effectively reduced, and then strengthens the protective value to TFT circuit.
In a kind of possible embodiment, first photoresist layer is red photoresist layer, green photoresist layer, blue light resistance
Layer and yellow photoresist layer in any one；
Second photoresist layer is any in red photoresist layer, green photoresist layer, blue light resistance layer and yellow photoresist layer
One, and second photoresist layer is different from first photoresist layer.
When the first photoresist layer is red photoresist layer, the second photoresist layer is green photoresist layer, blue light resistance layer and sodium yellow
Any one in resistance layer.
When the first photoresist layer is green photoresist layer, the second photoresist layer is red photoresist layer, blue light resistance layer and sodium yellow
Any one in resistance layer.
When the first photoresist layer is blue light resistance layer, the second photoresist layer is red photoresist layer, green photoresist layer and sodium yellow
Any one in resistance layer.
When the first photoresist layer is yellow photoresist layer, the second photoresist layer is red photoresist layer, green photoresist layer and blue light
Any one in resistance layer.
In alternatively possible embodiment, the thickness of first photoresist layer is more than the thickness of second photoresist layer
Degree.
Certainly, can be according to the thickness for being actually needed the first photoresist layer of setting and the second photoresist layer in actual application
Degree, the embodiment of the present invention are not especially limited to this.
In alternatively possible embodiment, the source class covers the first area of the semiconductor layer；
The drain electrode covers the second area of the semiconductor layer；
Wherein, the region between the source electrode and the drain electrode be the semiconductor layer the 3rd region, firstth area
Domain and the second area are symmetrical relative to the 3rd region.
In alternatively possible embodiment, the semiconductor layer covers the intermediate region of the passivation layer；
The source class also covers the first edge region of the passivation layer, and/or, the drain electrode also covers the passivation layer
Second edge region, wherein, the first edge region and the second edge region are respectively positioned at the intermediate region
Both sides.
In alternatively possible embodiment, the source class also covers the subregion of the substrate；
And/or
Described drain also covers the subregion of the substrate.
Passivation layer also covers the subregion of the substrate described in alternatively possible embodiment.So, can be with
Increase the horizontal area of passivation layer so that passivation layer can preferably obstruct infringement of the introduced contaminants to semiconductor, and then improve
Protective value of the passivation layer to semiconductor layer.
In alternatively possible embodiment, the material of the passivation layer includes at least one in silicon nitride, silica
Kind.
In alternatively possible embodiment, the material of the semiconductor layer is amorphous silicon hydride.
Second aspect, the embodiment of the present invention provide a kind of COA panels, including upper substrate, liquid crystal layer and infrabasal plate, the liquid
Crystal layer is arranged between the upper substrate and the infrabasal plate, wherein,
The infrabasal plate comprises at least TFT corresponding to color sub-pixel and color sub-pixel, and the TFT is above-mentioned first party
TFT described in any one of face.
Optionally, color sub-pixel includes red sub-pixel, green sub-pixels and blue subpixels.
In above-mentioned COA panels, because TFT photoresist layer includes two kinds of photoresist layer, different types of photoresistance
Layer has preferable absorbability to different types of light, so, can strengthen TFT photoresist layer to multiple color light
Absorbability, barrier property of the photoresist layer in TFT to light is enhanced, and then can effectively reduce light and TFT circuit is entered
The intensity of row irradiation, and then strengthen the protective value to TFT circuit.
TFT and COA panels provided in an embodiment of the present invention based on COA panels, TFT include：The grid is located at institute
State on substrate；The passivation layer covers the grid；The semiconductor layer is on the passivation layer；The source class and institute
State drain electrode and be located at the semiconductor layer；First photoresist layer cover the source class, the drain electrode and the source electrode and
Region between the drain electrode；Second photoresist layer is located on first photoresist layer；The organic layer is positioned at described the
On two photoresist layers.Because TFT photoresist layer includes two kinds of photoresist layer, different types of photoresist layer is to different type
Light there is preferable absorbability, so, TFT absorbability of the photoresist layer to multiple color light can be strengthened, increase
Photoresist layer in strong TFT to the barrier property of light, and then can effectively reduce light TFT circuit is irradiated it is strong
Degree, and then strengthen the protective value to TFT circuit.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of COA panels provided in an embodiment of the present invention；
Fig. 2 is the structural representation one of the TFT provided in an embodiment of the present invention based on COA panels；
Fig. 3 is the structural representation two of the TFT provided in an embodiment of the present invention based on COA panels.
Description of reference numerals：
11st, upper substrate；
12nd, infrabasal plate；
12-1, gate line；
12-2, source class line；
12-3, infrabasal plate；
21st, substrate；
22nd, grid；
23rd, passivation layer；
24th, semiconductor layer；
25th, source electrode；
26th, drain；
27th, the first photoresist layer；
28th, the second photoresist layer；
29th, organic layer.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Fig. 1 is the structural representation of COA panels provided in an embodiment of the present invention.Refer to Fig. 1, including upper substrate 11, under
Substrate 12 and the liquid crystal layer (not shown) being arranged between upper substrate 11 and infrabasal plate 12.Include grid in infrabasal plate 12
Polar curve 12-1, source class line 12-2, infrabasal plate 12-3, red sub-pixel, green sub-pixels, blue subpixels and each height picture
TFT corresponding to element, TFT corresponding to each sub-pixel are used to be controlled sub-pixel.It should be noted that each height picture
TFT corresponding to element is used to may refer to prior art to the process that sub-pixel is controlled, and the embodiment of the present invention is no longer entered to this
Row repeats.
In the TFT of COA panels, including photoresist layer and TFT circuit, photoresist layer can obstruct to light, avoid light
Line carries out direct irradiation to TFT circuit, and then realizes protection TFT circuit.In this application, at least two can be included in TFT
Different types of photoresist layer, different types of photoresist layer can have preferable absorbability to the light of different colours, so,
The photoresist layer in TFT can be caused to be respectively provided with preferable absorbability to the light of multiple color, enhance the photoresist layer in TFT
To the barrier property of light, and then the intensity that light is irradiated to TFT circuit can be effectively reduced, and then strengthened to TFT electricity
The protective value on road.
Below, the structure of the TFT in the COA panels shown in the application is described in detail by specific embodiment.Need
It is noted that following several specific embodiments can be combined with each other, for same or analogous content, in different implementation
Repeat specification is no longer carried out in example.
Fig. 2 is the structural representation one of the TFT provided in an embodiment of the present invention based on COA panels.Fig. 2 is referred to, TFT can
With including：Substrate 21, grid 22, passivation layer 23, semiconductor layer 24, source electrode 25, the 26, first photoresist layer 27 of drain electrode, the second photoresistance
Layer 28 and organic layer 29, wherein,
Grid 22 is on substrate 21.
Passivation layer 23 covers grid 22.
Semiconductor layer 24 is on passivation layer 23.
Source class 25 and drain electrode 26 are on semiconductor layer 24.
Region between first photoresist layer 27 covering source class 25, drain electrode 26 and source electrode 25 and drain electrode 26.
Second photoresist layer 28 is located on the first photoresist layer 27.
Organic layer 29 is located on the second photoresist layer 28.
Optionally, the material of grid 22, source electrode 25 and drain electrode 26 can be any one in molybdenum, titanium, aluminium, copper, also may be used
Think the combination of above-mentioned material.
Certainly, can also be according to being actually needed selection gate 22, source electrode 25 and drain electrode 26 in actual application
Material, the embodiment of the present invention are not especially limited to the material of grid 22, source electrode 25 and drain electrode 26.
Passivation layer 23 can play buffer action to impurity, can be effective by covering passivation layer 23 in the top of grid 22
Prevent impurity from intruding into inside TFT, for example, impurity can include steam, sodium ion and oxonium ion etc..
Optionally, the material of passivation layer 23 can be silicon nitride, any one in silica, or silicon nitride and
The combination of silica.
Certainly, in actual application, can also be implemented according to the material for being actually needed selection passivation layer 23, the present invention
Example is not especially limited to the material of passivation layer 23.
Optionally, inside TFT, because semiconductor layer 24 is easily influenceed by temperature, photosensitivity, reacting gas etc., because
This to semiconductor layer 24, it is necessary to protect, to prevent the impurity (such as temperature, light, gas etc.) in the external world by substrate 21
Semiconductor layer 24 is impacted.In order that obtaining passivation layer 23 carries out good protection, the water of passivation layer 23 to semiconductor layer 24
Plane product is more than the horizontal area of semiconductor layer 24, and semiconductor layer 24 is fully located at the upper surface of passivation layer 24, and then can be with
Prevent introduced contaminants from being impacted to semiconductor layer 24 by passivation layer 23.
Optionally, the material of semiconductor layer 24 is amorphous silicon hydride.Certainly, can also basis in actual application
The material of selection semiconductor layer 24 is actually needed, the embodiment of the present invention is not especially limited to the material of semiconductor layer 24.
The electric conductivity of semiconductor layer 24 is variable, and when semiconductor layer 24 meets preparatory condition, semiconductor layer 24 can
With conduction, otherwise, semiconductor layer 24 is non-conductive.
Optionally, when the voltage of grid 22 is more than turn on voltage threshold, semiconductor layer 24 is used as conductor, and can carry out
Conduction, so that source electrode 25 and the conducting of drain electrode 26, produce ON state source-drain current.When the voltage of grid 22, which is less than, closes voltage threshold,
Semiconductor layer 24 is used as insulator, and cannot carry out conduction, so that source electrode 25 and drain electrode 26 are not turned on, produces OFF state source and drain electricity
Stream.
Optionally, the thickness of the first photoresist layer 27 is more than the thickness of the second photoresist layer 28.Certainly, in actual application
In, the thickness that the first photoresist layer 27 and the second photoresist layer 28 can also be set according to being actually needed, the embodiment of the present invention to this not
Make specific limit.
Optionally, the first photoresist layer 27 is in red photoresist layer, green photoresist layer, blue light resistance layer and yellow photoresist layer
Any one；Second photoresist layer 28 is any one in red photoresist layer, green photoresist layer, blue light resistance layer and yellow photoresist layer
It is individual, and the second photoresist layer 28 is different from the first photoresist layer 27.
Optionally, different types of photoresist layer can absorb different types of light, for example, blue light resistance layer can absorb
The light of other colors in addition to blue ray, red photoresist layer can absorb the light of other colors in addition to red light
Line, green photoresist layer can absorb the light of other colors in addition to green light, and yellow photoresist layer can be absorbed except yellow
The light of other colors beyond light.
When the first photoresist layer 27 is red photoresist layer, the second photoresist layer 28 is green photoresist layer, blue light resistance layer and Huang
Any one in coloured light resistance layer.
When the first photoresist layer 27 is green photoresist layer, the second photoresist layer 28 is red photoresist layer, blue light resistance layer and Huang
Any one in coloured light resistance layer.
When the first photoresist layer 27 is blue light resistance layer, the second photoresist layer 28 is red photoresist layer, green photoresist layer and Huang
Any one in coloured light resistance layer.
When the first photoresist layer 27 is yellow photoresist layer, the second photoresist layer 28 is red photoresist layer, green photoresist layer and indigo plant
Any one in coloured light resistance layer.
Optionally, in actual application, for TFT corresponding to blue subpixels, in order to simplify TFT making stream
Journey, blue light resistance layer can be comprised at least in two photoresist layers of TFT corresponding to blue subpixels, red photoresistance can also be included
Layer either green photoresist layer or yellow photoresist layer, for example, can be by multiple combinations mode to TFT corresponding to blue subpixels
Two photoresist layers be combined, to obtain two photoresist layers in TFT.
For example, it is assumed that TFT corresponding to blue subpixels includes blue light resistance layer and red photoresist layer, and the first photoresist layer
For red photoresist layer, the second photoresist layer is blue light resistance layer.So, in actual application, light is irradiated to blueness first
Photoresist layer, after light reaches organic layer, organic layer is reflected light so that and light arrives again at blue light resistance layer,
Then red photoresist layer, the light of other colors that blue light resistance layer is reflected organic layer, in addition to blue ray are reached again
Once absorbed, then organic layer is reflected by red photoresist layer, the light of other colors in addition to red light carries out
Second of absorption, so, it may be determined that two photoresist layers have carried out good absorption to the light of most of color, reduce
The light intensity being irradiated on TFT circuit, and then improve the protective value to TFT circuit.
It should also be noted that, in actual application, three kinds of photoresist layers can also be set in TFT, three kinds of light
Resistance layer can be respectively any three kinds in red photoresist layer, green photoresist layer, blue light resistance layer and yellow photoresist layer.Certainly,
The arrangement mode that three kinds of photoresist layers can be set according to being actually needed, the embodiment of the present invention are not especially limited to this.
Below, the accessible beneficial effects of the TFT based on COA panels shown in the application are carried out by specific example detailed
Describe in detail bright：In the prior art, for TFT corresponding to blue subpixels, blue light resistance layer is only included in TFT, due to blue light
Resistance layer is poor to the absorbability of blue ray, and so, blue ray is easy to be irradiated to TFT circuit by blue light resistance layer
On, and because the energy of blue ray is stronger, therefore, after blue ray is radiated at TFT circuit, TFT circuit can be influenceed
Life-span.And in this application, it is assumed that TFT corresponding to blue subpixels includes blue light resistance layer and red photoresist layer, blue light
Resistance layer can carry out good absorption to the light (including red light) of other colors in addition to blue ray, in light by blue
After coloured light resistance layer, the light through blue light resistance layer is substantially blue ray, and red photoresist layer is irradiated in blue ray
When, red photoresist layer can carry out good absorption to blue ray, and then avoid blue ray from being radiated on TFT circuit, really
Protect and good absorption is carried out to the light of majority by blue light resistance layer and red photoresist layer, reduced and be irradiated to TFT circuit
On light intensity, and then improve to the protective value of TFT circuit.
TFT provided in an embodiment of the present invention based on COA panels includes：The grid is on the substrate；It is described
Passivation layer covers the grid；The semiconductor layer is on the passivation layer；The source class and the drain electrode are located at described
Semiconductor layer；First photoresist layer is covered between the source class, the drain electrode and the source electrode and the drain electrode
Region；Second photoresist layer is located on first photoresist layer；The organic layer is located on second photoresist layer.By
Include two kinds of photoresist layer in TFT photoresist layer, different types of photoresist layer has preferable to different types of light
Absorbability, so, TFT absorbability of the photoresist layer to multiple color light can be strengthened, enhance the photoresistance in TFT
Layer can effectively reduce the intensity that light is irradiated to TFT circuit to the barrier property of light, and then strengthen to TFT
The protective value of circuit.
, can also be in TFT in order to strengthen the protective value to semiconductor layer 24 on the basis of embodiment illustrated in fig. 2
Source class 25 and the set-up mode of drain electrode 26 are further improved, specifically, embodiment shown in Figure 3.
Fig. 3 is the structural representation two of the TFT provided in an embodiment of the present invention based on COA panels.In embodiment illustrated in fig. 2
On the basis of, Fig. 3 is referred to,
Source class 25 covers the first area of semiconductor layer 24, the second area of the covering semiconductor layer 24 of drain electrode 26；Wherein, source
Region between pole and drain electrode 26 is the 3rd region of semiconductor layer 24, and first area and second area are relative to the 3rd region pair
Claim.Optionally, source class 25 and 26 formed symmetricals relative to semiconductor layer 24 that drain.
Optionally, semiconductor layer 24 covers the intermediate region of passivation layer；Source class 25 also covers the first edge area of passivation layer
Domain, and/or, drain electrode 26 also covers the second edge region of passivation layer, wherein, first edge region and second edge region difference
Positioned at the both sides of intermediate region.
So, it can not only ensure that source class 25 and drain electrode 26 can cover the both sides of semiconductor layer 24, and then improve half-and-half
The protective value of conductor layer 24.
Optionally, source class 25 can also cover the subregion of substrate；And/or drain electrode 26 can also cover the portion of substrate
Subregion.So, source class 25 and the cladding thickness to semiconductor layer 24 of drain electrode 26 are added, is further increased to semiconductor
The protective value of layer.
Optionally, passivation layer 23 can also cover the subregion of the substrate.So, the water of passivation layer 23 can be increased
Plane is accumulated so that passivation layer 23 can preferably obstruct infringement of the introduced contaminants to semiconductor layer 24, and then improve passivation layer 23
To the protective value of semiconductor layer 24.
In the embodiment shown in fig. 3, it is different types of because TFT photoresist layer includes two kinds of photoresist layer
Photoresist layer has preferable absorbability to different types of light, so, can strengthen TFT photoresist layer to multiple color light
The absorbability of line, barrier property of the photoresist layer in TFT to light is enhanced, and then can effectively reduce light to TFT electricity
The intensity that road is irradiated, and then strengthen the protective value to TFT circuit.Further, by setting source class and drain locations,
The protective value to semiconductor layer can be further improved, and then improves the protective value to TFT circuit.
The embodiment of the present invention also provides a kind of COA panels, and the structure of the COA panels is as shown in figure 1, in the embodiment of the present invention
In, including upper substrate, liquid crystal layer and infrabasal plate, liquid crystal layer be arranged between upper substrate and infrabasal plate, wherein, infrabasal plate at least wraps
TFT corresponding to color sub-pixel and color sub-pixel is included, the TFT is the TFT described in Fig. 2 embodiments.
Optionally, color sub-pixel can include red sub-pixel, green sub-pixels and blue subpixels.
In above-mentioned COA panels, because TFT photoresist layer includes two kinds of photoresist layer, different types of photoresistance
Layer has preferable absorbability to different types of light, so, can strengthen TFT photoresist layer to multiple color light
Absorbability, barrier property of the photoresist layer in TFT to light is enhanced, and then can effectively reduce light and TFT circuit is entered
The intensity of row irradiation, and then strengthen the protective value to TFT circuit.
Finally it should be noted that：Various embodiments above is only illustrating the technical scheme of the embodiment of the present invention, rather than to it
Limitation；Although the embodiment of the present invention is described in detail with reference to foregoing embodiments, one of ordinary skill in the art
It should be understood that：It can still modify to the technical scheme described in foregoing embodiments, either to which part or
All technical characteristic carries out equivalent substitution；And these modifications or replacement, the essence of appropriate technical solution is departed from this hair
The scope of bright embodiment scheme.
Claims (10)
- A kind of 1. thin film transistor (TFT) TFT based on COA panels, it is characterised in that including：Substrate, grid, passivation layer, semiconductor Layer, source electrode, drain electrode, the first photoresist layer, the second photoresist layer and organic layer, wherein,The grid is on the substrate；The passivation layer covers the grid；The semiconductor layer is on the passivation layer；The source class and the drain electrode are located at the semiconductor layer；First photoresist layer covers the source class, the drain electrode and the region between the source electrode and the drain electrode；Second photoresist layer is located on first photoresist layer；The organic layer is located on second photoresist layer.
- 2. TFT according to claim 1, it is characterised in thatFirst photoresist layer is any one in red photoresist layer, green photoresist layer, blue light resistance layer and yellow photoresist layer；Second photoresist layer is any one in red photoresist layer, green photoresist layer, blue light resistance layer and yellow photoresist layer, And second photoresist layer is different from first photoresist layer.
- 3. TFT according to claim 1 or 2, it is characterised in that the thickness of first photoresist layer is more than second light The thickness of resistance layer.
- 4. TFT according to claim 1 or 2, it is characterised in thatThe source class covers the first area of the semiconductor layer；The drain electrode covers the second area of the semiconductor layer；Wherein, the region between the source electrode and the drain electrode be the semiconductor layer the 3rd region, the first area and The second area is symmetrical relative to the 3rd region.
- 5. TFT according to claim 1 or 2, it is characterised in thatThe semiconductor layer covers the intermediate region of the passivation layer；The source class also covers the first edge region of the passivation layer, and/or, described drain also covers the of the passivation layer Two fringe regions, wherein, the first edge region and the second edge region are respectively positioned at the both sides of the intermediate region.
- 6. TFT according to claim 3, it is characterised in thatThe source class also covers the subregion of the substrate；And/orDescribed drain also covers the subregion of the substrate.
- 7. TFT according to claim 1 or 2, it is characterised in that the passivation layer also covers the part area of the substrate Domain.
- 8. TFT according to claim 1 or 2, it is characterised in that the material of the passivation layer includes silicon nitride, silica At least one of.
- 9. TFT according to claim 1 or 2, it is characterised in that the material of the semiconductor layer is amorphous silicon hydride.
- 10. a kind of COA panels, it is characterised in that including upper substrate, liquid crystal layer and infrabasal plate, the liquid crystal layer is arranged on described Between upper substrate and the infrabasal plate, wherein,The infrabasal plate comprises at least TFT corresponding to color sub-pixel and the color sub-pixel, and the TFT is claim TFT described in any one of 1-9.
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| CN201710953769.9A CN107731789A (en) | 2017-10-13 | 2017-10-13 | TFT and COA panels based on COA panels |
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| CN201710953769.9A CN107731789A (en) | 2017-10-13 | 2017-10-13 | TFT and COA panels based on COA panels |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109298563A (en) * | 2018-11-29 | 2019-02-01 | 武汉华星光电技术有限公司 | A kind of display panel and its display device |
| CN110400811A (en) * | 2019-08-30 | 2019-11-01 | 合肥鑫晟光电科技有限公司 | Array substrate and display device |
| CN114428427A (en) * | 2022-01-27 | 2022-05-03 | Tcl华星光电技术有限公司 | Display panel and display device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08146402A (en) * | 1994-11-24 | 1996-06-07 | Sony Corp | Color display device |
| US20010005245A1 (en) * | 1999-12-24 | 2001-06-28 | Nec Corporation | Color liquid crystal display and method of manufacturing color liquid crystal display |
| CN1512227A (en) * | 2002-12-26 | 2004-07-14 | Lg.������Lcd����˾ | Liquid crystal display device and its producing method |
| CN103000661A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and display device |
-
2017
- 2017-10-13 CN CN201710953769.9A patent/CN107731789A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08146402A (en) * | 1994-11-24 | 1996-06-07 | Sony Corp | Color display device |
| US20010005245A1 (en) * | 1999-12-24 | 2001-06-28 | Nec Corporation | Color liquid crystal display and method of manufacturing color liquid crystal display |
| CN1512227A (en) * | 2002-12-26 | 2004-07-14 | Lg.������Lcd����˾ | Liquid crystal display device and its producing method |
| CN103000661A (en) * | 2012-12-12 | 2013-03-27 | 京东方科技集团股份有限公司 | Array substrate, preparation method of array substrate and display device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109298563A (en) * | 2018-11-29 | 2019-02-01 | 武汉华星光电技术有限公司 | A kind of display panel and its display device |
| CN110400811A (en) * | 2019-08-30 | 2019-11-01 | 合肥鑫晟光电科技有限公司 | Array substrate and display device |
| US11264411B2 (en) | 2019-08-30 | 2022-03-01 | Hefei Xinsheng Optoelectronics Technology Co., Ltd. | Array substrate and display device including light shielding layers |
| CN114428427A (en) * | 2022-01-27 | 2022-05-03 | Tcl华星光电技术有限公司 | Display panel and display device |
| CN114428427B (en) * | 2022-01-27 | 2023-10-03 | Tcl华星光电技术有限公司 | Display panel and display device |
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Application publication date: 20180223 |