CN107329340A - A kind of tft array substrate and COA type TFT liquid crystal panels - Google Patents

A kind of tft array substrate and COA type TFT liquid crystal panels Download PDF

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Publication number
CN107329340A
CN107329340A CN201710701387.7A CN201710701387A CN107329340A CN 107329340 A CN107329340 A CN 107329340A CN 201710701387 A CN201710701387 A CN 201710701387A CN 107329340 A CN107329340 A CN 107329340A
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CN
China
Prior art keywords
tft
substrate
color blocking
layer
correspondence
Prior art date
Application number
CN201710701387.7A
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Chinese (zh)
Inventor
彭邦银
黄添钧
Original Assignee
深圳市华星光电技术有限公司
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Filing date
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Priority to CN201710701387.7A priority Critical patent/CN107329340A/en
Publication of CN107329340A publication Critical patent/CN107329340A/en

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Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating, or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F2001/136222Color filter incorporated in the active matrix substrate

Abstract

The embodiment of the invention discloses a kind of tft array substrate, the tft array substrate at least includes:Substrate (11) and the TFT structure (2) being arranged on the substrate (11);It is arranged on the color blocking layer (18) on the substrate (11), wherein, color blocking layer (18) the correspondence red, green, blue sub-pixels region forms red, green, blue color color blocking block respectively, and the color blocking block (182) of at least described blue subpixel areas forms the first open area (185) in the correspondence position of the TFT structure.The present embodiment additionally provides corresponding COA types TFT liquid crystal panels.Implement the present invention, TFT devices can be protected, so as to avoid picture from occurring colour cast phenomenon.

Description

A kind of tft array substrate and COA type TFT liquid crystal panels

Technical field

The present invention relates to liquid crystal display manufacturing technology field, more particularly to a kind of tft array substrate and COA types TFT Liquid crystal panel.

Background technology

Liquid crystal display device (Liquid Crystal Display, LCD) has that fuselage is thin, power saving, without good fortune penetrate etc. numerous Advantage, is widely used.Usual liquid crystal display device includes housing, the liquid crystal panel in housing and located at housing Interior backlight module (Backlight module).Wherein, the structure of liquid crystal panel is mainly by a TFT (Thin Film Transistor, thin film transistor (TFT)) array base palte, a colored filter substrate (Color Filter, CF) and it is configured at two Liquid crystal layer (Liquid Crystal Layer) between substrate is constituted, and its operation principle is by being applied on two panels glass substrate Plus driving voltage controls the rotation of the liquid crystal molecule of liquid crystal layer, the light of backlight module reflected into generation picture.

COA (Color filter On Array) is that a kind of color blocking layer by CF substrates is prepared on array base palte The delay situation of signal is improved on technology, coupling of the COA structures because reducing pixel electrode and metal routing, metal wire. Parasitic capacitance size can be obviously reduced in COA structures, and improves panel aperture opening ratio, improve Display panel quality.

Usual COA designs are using red color resistance, green color blocking, blue color blocking covering TFT devices, due to red color resistance, green Color color blocking, blue color blocking are different to the absorptivity, refractive index, reflectivity of light, wherein, red color resistance and green color blocking are poor It is different smaller, and two kinds of color blockings of blue color blocking and other differ greatly, so when TFT is influenceed larger by photoelectric current or is existed certain Electric leakage when, partially yellow phenomenon (i.e. the secondary colour of red and green manure color) occurs in picture, as this colour cast of the aging of device shows As also can be increasingly severe.

The content of the invention

The technical problems to be solved by the invention are there is provided a kind of tft array substrate and COA type TFT liquid crystal panels, TFT devices can be protected, it is to avoid colour cast phenomenon occurs for picture.

In order to solve the above-mentioned technical problem, the one side of the embodiment of the present invention 1 provides a kind of tft array substrate, described Tft array substrate at least includes:

Substrate and the TFT structure being arranged on the substrate;

Color blocking layer, is set on the substrate, wherein, the color blocking layer correspondence red, green, blue sub-pixels region point Not Xing Cheng red color resistance block, green color blocking block, blue color blocking block, the blue color blocking block of at least described blue subpixel areas is in institute State the first open area of correspondence position formation of TFT structure.

Wherein, the array base palte at least include red, green, blue sub-pixels region, each subpixel area include substrate, TFT structure and color blocking layer on the substrate;

Wherein, the TFT structure includes the grid and scan line being arranged on the substrate, is covered on the grid The gate insulator of the substrate, on the gate insulator and semiconductor layer that the correspondence grid is set, located at institute The source/drain being in contact on gate insulator with the two ends of the semiconductor layer is stated, the grid are covered in the source/drain The passivation layer of pole insulating barrier;

Each subpixel area further comprises:Hung down on the gate insulator and in the horizontal direction with scan line The signal wire of straight cross arrangement, the pixel electrode layer in the color blocking layer;Wherein, the color blocking layer is located at the passivation layer On, the top of the correspondence source/drain is provided with the first via in the color blocking layer and passivation layer, and the pixel electrode layer is via institute The first via is stated to be in contact with the source/drain.

Wherein, the color blocking block of the red subpixel areas is in the second open region of correspondence position formation of the TFT structure Domain, the color blocking block of the green subpixel areas is in the 3rd open area of correspondence position formation of the TFT structure.

Wherein, it is provided with red color resistance in first open area.

Wherein, it is provided with green color blocking in first open area.

Correspondingly, the another aspect of the embodiment of the present invention, also provides a kind of COA types TFT liquid crystal panels, it includes array base Glass substrate and the liquid crystal layer between the array base palte and glass substrate that plate and the array base palte are oppositely arranged, Wherein, the array base palte uses foregoing tft array substrate.

Wherein, the position of the correspondence semiconductor layer is provided with point-like black matrix, the black square on the glass substrate Battle array is provided with common electrode layer.

Wherein, the pixel electrode layer and the material of common electrode layer are tin indium oxide.

Implement the embodiment of the present invention, with following beneficial effect:

A kind of tft array substrate and COA type TFT liquid crystal panels provided in an embodiment of the present invention, by least in blueness The top of the TFT structure of subpixel area forms open area, or sets red color resistance or green color blocking in the open area, When TFT structure by photoelectric current is influenceed larger or when there is certain electric leakage, due to the color of blue subpixel areas open area The performance hindered with the color blocking in other colored pixels regions is more or less the same, it is possible to achieve TFT devices are protected, so that certain It can mitigate in degree, it is to avoid colour cast phenomenon occurs for picture.

Brief description of the drawings

In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with Other accompanying drawings are obtained according to these accompanying drawings.

Fig. 1 is a kind of structural representation of the one embodiment for tft array substrate that the present invention is provided;

Fig. 2 is a kind of structural representation of another embodiment of tft array substrate that the present invention is provided;

Fig. 3 is a kind of structural representation of another embodiment of tft array substrate that the present invention is provided;

Fig. 4 is a kind of structural representation of the one embodiment for COA types TFT liquid crystal panels that the present invention is provided.

Embodiment

Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear complete Ground is described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on Embodiment in the present invention, those of ordinary skill in the art obtained on the premise of creative work is not made it is all its Its embodiment, belongs to the scope of protection of the invention.

Here, it should also be noted that, in order to avoid having obscured the present invention because of unnecessary details, in the accompanying drawings only Show and according to the solution of the present invention closely related structure and/or process step, and eliminate little with relation of the present invention Other details.

As shown in figure 1, showing a kind of structural representation of tft array substrate one embodiment that the present invention is provided. In the embodiment, the tft array substrate at least includes:

Substrate 11 and the TFT structure 2 being arranged on the substrate;

Color blocking layer 18, is set on the substrate, wherein, the correspondence of the color blocking layer 18 red, green, blue sub-pixels area Domain forms red color resistance block 180, green color blocking block 181, blue color blocking block 182 respectively, at least described blue subpixel areas Blue color blocking block 182 is in the first open area 185 of correspondence position formation of the TFT structure.

More specifically, the array base palte 1 at least includes red, green, blue sub-pixels region, each subpixel area includes Substrate 11, TFT structure 2 and color blocking layer 18 on the substrate 11;

Wherein, the TFT structure 2 includes the grid 12 and scan line being arranged on the substrate 11, located at the grid The gate insulator 13 of the substrate 11 is covered on 12, on the gate insulator 13 and the correspondence grid 12 sets Semiconductor layer 14, the source/drain 16 being in contact on the gate insulator 13 with the two ends of the semiconductor layer 14, is located at The passivation layer 17 of the gate insulator 13 is covered in the source/drain 16;

Each subpixel area further comprises:On the gate insulator 13 and in the horizontal direction with scan line The signal wire 15 of square crossing arrangement, the pixel electrode layer 19 in the color blocking layer 18;Wherein, the color blocking layer 18 is located at On the passivation layer 17, the top of the correspondence source/drain 16 is provided with the first via 81 in the color blocking layer 18 and passivation layer 17, The pixel electrode layer 19 is in contact via first via 81 with the source/drain 16.It is understood that in color blocking layer One layer of insulating protective layer 10 can also be set on 18, and it is used to protect the liquid crystal in the panel of the composition of TFT substrate 11 not to be contaminated.

In Fig. 1, the red color resistance block 180 of the red subpixel areas is formed in the correspondence position of the TFT structure Second open area 183, the green color blocking block 181 of the green subpixel areas is formed in the correspondence position of the TFT structure 3rd open area 184.

Wherein, the pixel electrode layer 19 and the material of common electrode layer 45 are tin indium oxide, the source/drain 16, The material of grid 12, scan line and signal wire 15 can be iron, molybdenum or copper etc..

As shown in Fig. 2 showing a kind of structural representation of another embodiment of tft array substrate that the present invention is provided Figure.In this embodiment, it is with the difference of the embodiment shown in Fig. 1, in this embodiment, the red sub-pixel The red color resistance block 180 in region covers whole red subpixel areas, and the green color blocking block 181 of green subpixel areas covers Whole green subpixel areas is covered;Red color resistance is provided with first open area 185 of blue subpixel areas.

As shown in figure 3, showing a kind of structural representation of another embodiment of tft array substrate that the present invention is provided Figure.In this embodiment, it is with the difference of the embodiment shown in Fig. 1, described the first of blue subpixel areas Green color blocking is provided with open area 185.

It is understood that setting red color resistance or green color blocking in the first open area, blue subpixels can be made The performance of the color blocking and the color blocking in other colored pixels regions of region first open area is close.

As shown in figure 4, showing that the invention provides a kind of schematic diagram of one embodiment of COA types TFT liquid crystal panels. In this embodiment, it includes array base palte 1, the glass substrate 4 being oppositely arranged with the array base palte 1 and positioned at the battle array Liquid crystal layer 3 between row substrate 1 and glass substrate 4;

Wherein, the tft array substrate shown in being using Fig. 1 in the array base palte 1.

The position of the correspondence semiconductor layer 14 is provided with black matrix" 44, the black matrix" 44 on the glass substrate 4 It is provided with common electrode layer 45.

Wherein, the pixel electrode layer 19 and the material of common electrode layer 45 are tin indium oxide, the source/drain 16, The material of grid 12, scan line and signal wire 15 can be iron, molybdenum or copper etc..

It is understood that in the invention provides a kind of other embodiment of COA types TFT liquid crystal panels, can also Array base palte 1 therein is replaced with such as the tft array substrate in Fig. 2 or Fig. 3.

More details, may be referred to the foregoing description to Fig. 1 to Fig. 3.

Implement the embodiment of the present invention, with following beneficial effect:

A kind of tft array substrate and COA type TFT liquid crystal panels provided in an embodiment of the present invention, by least in blueness The top of the TFT structure of subpixel area forms open area, or sets red color resistance or green color blocking in the open area, When TFT structure by photoelectric current is influenceed larger or when there is certain electric leakage, due to the color of blue subpixel areas open area The performance hindered with the color blocking in other colored pixels regions is more or less the same, it is possible to achieve TFT devices are protected, so that certain It can mitigate in degree, it is to avoid colour cast phenomenon occurs for picture.

It should be noted that herein, such as first and second or the like relational terms are used merely to a reality Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating In any this actual relation or order.Moreover, term " comprising ", "comprising" or its any other variant are intended to Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that Also there is other identical element in process, method, article or equipment including the key element.

Described above is only the embodiment of the application, it is noted that for the ordinary skill people of the art For member, on the premise of the application principle is not departed from, some improvements and modifications can also be made, these improvements and modifications also should It is considered as the protection domain of the application.

Claims (8)

1. a kind of tft array substrate, it is characterised in that the tft array substrate at least includes:
Substrate (11) and the TFT structure (2) being arranged on the substrate (11);
Color blocking layer (18), is arranged on the substrate (11), wherein, color blocking layer (18) correspondence red, green, blue dice picture Plain region forms red color resistance block (180), green color blocking block (181), blue color blocking block (182) respectively, at least described blueness Correspondence position formation first open area (185) of the blue color blocking block (182) of pixel region in the TFT structure.
2. a kind of TFT substrate as claimed in claim 1, it is characterised in that the array base palte (1) at least includes red, green, blue Sub-pixels region, each subpixel area includes substrate (11), the TFT structure (2) and described on the substrate (11) Color blocking layer (18);
Wherein, the TFT structure (2) includes grid (12) and the scan line being arranged on the substrate (11), located at the grid The gate insulator (13) of the substrate (11) is covered on pole (12), on the gate insulator (13) and the correspondence grid The semiconductor layer (14) that pole (12) is set, the two ends with the semiconductor layer (14) on the gate insulator (13) connect Tactile source/drain (16), covers the passivation layer (17) of the gate insulator (13) in the source/drain (16);
Each subpixel area further comprises:Hung down on the gate insulator (13) and in the horizontal direction with scan line The signal wire (15) of straight cross arrangement, the pixel electrode layer (19) in the color blocking layer (18);Wherein, the color blocking layer (18) on the passivation layer (17), the correspondence source/drain (16) is upper on the color blocking layer (18) and passivation layer (17) Side is provided with the first via (81), and the pixel electrode layer (19) is via first via (81) and the source/drain (16) phase Contact.
3. a kind of tft array substrate as claimed in claim 2, it is characterised in that the color blocking block of the red subpixel areas (180) in the correspondence position formation the second open area (183) of the TFT structure, the color blocking block of the green subpixel areas (181) in the 3rd open area (184) of correspondence position formation of the TFT structure.
4. a kind of tft array substrate as claimed in claim 1 or 2, it is characterised in that in first open area (185) In be provided with red color resistance.
5. a kind of tft array substrate as claimed in claim 1 or 2, it is characterised in that in first open area (185) In be provided with green color blocking.
6. a kind of COA types TFT liquid crystal panels, it includes array base palte (1), the glass being oppositely arranged with the array base palte (1) Substrate (4) and the liquid crystal layer (3) between the array base palte (1) and glass substrate (2);Characterized in that, the battle array Row substrate (1) is using the tft array substrate as described in any one of Claims 1-4.
7. a kind of COA types TFT liquid crystal panels as claimed in claim 5, it is characterised in that correspondence on the glass substrate (4) The position of the semiconductor layer (14) is provided with black matrix" (44), and the black matrix" (44) is provided with common electrode layer (45).
8. a kind of COA types TFT liquid crystal panels as claimed in claim 6, it is characterised in that the pixel electrode layer (19) and public affairs The material of common electrode layer (25) is tin indium oxide.
CN201710701387.7A 2017-08-16 2017-08-16 A kind of tft array substrate and COA type TFT liquid crystal panels CN107329340A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710701387.7A CN107329340A (en) 2017-08-16 2017-08-16 A kind of tft array substrate and COA type TFT liquid crystal panels

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Application Number Priority Date Filing Date Title
CN201710701387.7A CN107329340A (en) 2017-08-16 2017-08-16 A kind of tft array substrate and COA type TFT liquid crystal panels

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108196408A (en) * 2017-12-28 2018-06-22 深圳市华星光电技术有限公司 The feeler switch of COA substrates and use its test method
CN108388057A (en) * 2018-03-16 2018-08-10 深圳市华星光电半导体显示技术有限公司 Array substrate
CN109742112A (en) * 2019-01-08 2019-05-10 京东方科技集团股份有限公司 OLED display panel and electronic equipment

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1512227A (en) * 2002-12-26 2004-07-14 Lg.飞利浦Lcd有限公司 Liquid crystal display device and its producing method
US20150138478A1 (en) * 2013-11-19 2015-05-21 Samsung Display Co., Ltd. Liquid crystal display and method of manufacturing the same
CN104730759A (en) * 2015-02-25 2015-06-24 友达光电股份有限公司 Display panel and manufacturing method thereof
CN104965366A (en) * 2015-07-15 2015-10-07 深圳市华星光电技术有限公司 Structure and manufacturing method of array colored film integrated type liquid crystal display panel

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1512227A (en) * 2002-12-26 2004-07-14 Lg.飞利浦Lcd有限公司 Liquid crystal display device and its producing method
US20150138478A1 (en) * 2013-11-19 2015-05-21 Samsung Display Co., Ltd. Liquid crystal display and method of manufacturing the same
CN104730759A (en) * 2015-02-25 2015-06-24 友达光电股份有限公司 Display panel and manufacturing method thereof
CN104965366A (en) * 2015-07-15 2015-10-07 深圳市华星光电技术有限公司 Structure and manufacturing method of array colored film integrated type liquid crystal display panel

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108196408A (en) * 2017-12-28 2018-06-22 深圳市华星光电技术有限公司 The feeler switch of COA substrates and use its test method
CN108388057A (en) * 2018-03-16 2018-08-10 深圳市华星光电半导体显示技术有限公司 Array substrate
CN108388057B (en) * 2018-03-16 2020-09-29 深圳市华星光电半导体显示技术有限公司 Array substrate
CN109742112A (en) * 2019-01-08 2019-05-10 京东方科技集团股份有限公司 OLED display panel and electronic equipment

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