CN107731704B - Method and device for detecting reverse angle of via hole - Google Patents
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Abstract
The invention relates to a via hole reverse angle detection method and a device, wherein the method comprises the following steps: shooting the TFT array substrate by using a metallographic microscope to obtain a via hole image; analyzing the via hole image to obtain a grey scale value outside the via hole and a grey scale value inside the via hole; detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not; and when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, judging that an inverse angle exists in the through hole. When the metal layer on the inner side edge of the through hole is etched, light rays emitted into the through hole are subjected to diffuse reflection, the difference value between the gray value in the through hole and the gray value outside the through hole is small, the reverse angle is judged to exist, the judgment on the reverse angle of the through hole is realized quickly and efficiently through the process, the TFT array substrate of a defective product can be effectively detected, the TFT array substrate of the defective product is prevented from entering the subsequent process for processing, and the production cost is low.
Description
Technical Field
The invention relates to the technical field of TFT (thin film transistor) manufacturing, in particular to a method and a device for detecting an inverse angle of a via hole.
Background
In the production process of a Thin Film Transistor (TFT) array, an SiN (silicon nitride) layer on a metal layer needs to be etched, and a via hole is formed in the SiN layer, so that the metal layer corresponding to the via hole is exposed. In via etching, if a reverse angle occurs, indicating that the interface of the SiN layer with the metal layer growth has been etched, it can be concluded that the metal near the inner edge of the via has been mostly etched. The TFT-array prepared in this way has defects, and if the TFT-array is put into a production process of a subsequent stage, a defective product is generated. However, the prior method for detecting the reverse angle of the via hole is lacked, so that the TFT-array cannot be repaired in time, the reject ratio is high, and the production cost is high.
Disclosure of Invention
Based on this, it is necessary to provide a method and an apparatus for detecting a reverse angle of a via hole.
A via hole reverse angle detection method comprises the following steps:
shooting the TFT array substrate by using a metallographic microscope to obtain a via hole image;
analyzing the via hole image to obtain a grey scale value outside the via hole and a grey scale value inside the via hole;
detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not;
and when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, judging that an inverse angle exists in the through hole.
In one embodiment, the step of determining that an inverse angle exists in the via hole when the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than the first preset threshold includes:
when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, detecting whether the fluctuation of the gray value inside the through hole is larger than a second preset threshold;
and when the fluctuation of the gray value in the through hole is larger than the second preset threshold value, judging that the through hole has an inverse angle.
In one embodiment, the step of detecting whether the fluctuation of the gray value in the via is greater than a second preset threshold value includes:
and detecting whether the difference between the maximum value and the minimum value of the gray value in the through hole is larger than a second preset threshold value.
In one embodiment, the step of determining that the via hole has an inverse angle when the fluctuation of the grayscale value in the via hole is greater than the second preset threshold includes:
when the fluctuation of the gray value in the through hole is larger than the second preset threshold, acquiring a gray value curve in the through hole according to the fluctuation of the gray value in the through hole, and detecting the number of wave crests and/or wave troughs of the gray value curve in the through hole;
and when the number of wave crests and/or wave troughs of the gray value curve in the through hole is larger than the third preset threshold value, judging that the through hole has an inverse angle.
In one embodiment, the step of detecting whether the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than a first preset threshold includes:
and detecting whether the difference between the average value of the gray values outside the through hole and the average value of the gray values inside the through hole is smaller than a first preset threshold value.
In one embodiment, the step of detecting whether the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than a first preset threshold includes:
and detecting whether the difference between the maximum value of the gray value outside the through hole and the maximum value of the gray value inside the through hole is smaller than a first preset threshold value.
In one embodiment, the step of taking a picture of the TFT array substrate by using a metallographic microscope to obtain a via hole image includes:
and shooting the TFT array substrate from the direction perpendicular to the TFT array substrate by adopting a metallographic microscope to obtain the via hole image.
A via reverse angle detection device, comprising:
the via hole image acquisition module is used for shooting the TFT array substrate by adopting a metallographic microscope to acquire a via hole image;
the grey value acquisition module is used for analyzing the via hole image and acquiring the grey value outside the via hole and the grey value inside the via hole;
the detection module is used for detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not;
and the judging module is used for judging that the reverse angle exists in the through hole when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold.
In one embodiment, the determining module comprises:
the fluctuation detection unit is used for detecting whether the fluctuation of the gray value in the through hole is larger than a second preset threshold value or not when the difference between the gray value outside the through hole and the gray value in the through hole is smaller than the first preset threshold value;
and the judging unit is used for judging that the via hole has an inverse angle when the fluctuation of the gray value in the via hole is larger than the second preset threshold value.
In one embodiment, the determining unit includes:
the gray value curve detection subunit is used for acquiring a gray value curve in the via hole according to the fluctuation of the gray value in the via hole when the fluctuation of the gray value in the via hole is greater than the second preset threshold value, and detecting the number of wave crests and/or wave troughs of the gray value curve in the via hole;
and the judging subunit is used for judging that an inverse angle exists in the through hole when the number of wave crests and/or wave troughs of the gray value curve in the through hole is larger than the third preset threshold.
According to the method and the device for detecting the reverse angle of the via hole, the via hole image of the TFT array substrate is obtained through the metallographic microscope, the difference value between the gray value outside the via hole and the gray value inside the via hole is detected, when the metal layer on the edge inside the via hole is etched, light rays emitted into the via hole are subjected to diffuse reflection, the difference value between the gray value inside the via hole and the gray value outside the via hole is smaller, the reverse angle is judged to exist, the reverse angle of the via hole is judged quickly and efficiently through the process, the TFT array substrate with the poor reverse angle can be effectively detected, the defective TFT array substrate is prevented from entering subsequent procedures for processing, waste operation of post-processing is avoided, and the production cost is lower.
Drawings
FIG. 1 is a schematic flow chart of a via reverse angle detection method according to an embodiment;
FIG. 2 is a partial schematic flow chart diagram illustrating a method for via reverse angle detection according to another embodiment;
FIG. 3 is a partial schematic flow chart diagram illustrating a method for via reverse angle detection according to another embodiment;
FIG. 4 is a block diagram of a via reverse angle detection apparatus according to an embodiment;
FIG. 5 is a block diagram of the structure of a decision module of one embodiment;
FIG. 6 is a block diagram of the structure of a decision unit of an embodiment;
FIG. 7 is a block diagram of a computer architecture of one embodiment.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
For example, a via reverse angle detection method includes: shooting the TFT array substrate by using a metallographic microscope to obtain a via hole image; analyzing the via hole image to obtain a grey scale value outside the via hole and a grey scale value inside the via hole; detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not; and when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, judging that an inverse angle exists in the through hole.
In the above embodiment, the via hole image of the TFT array substrate is obtained through the metallographic microscope, the difference between the gray value outside the via hole and the gray value inside the via hole is detected, and when the metal layer on the inner edge of the via hole is etched, light emitted into the via hole is diffusely reflected, so that the difference between the gray value inside the via hole and the gray value outside the via hole is small, thereby determining that the reverse angle exists.
In one embodiment, a method for detecting an inverse angle of a via hole is provided, as shown in fig. 1, including:
and 120, shooting the TFT array substrate by using a metallographic microscope to obtain a via hole image.
In this embodiment, the TFT array substrate is a TFT substrate located at a TFT-array segment, and the TFT substrate is a TFT substrate subjected to a via etching process.
Specifically, the metallographic microscope is connected with a computer as an optical microscope, performs photoelectric conversion on an image acquired by the optical microscope, and transmits the image to the computer, so that microscopic observation can be performed on an eyepiece of the microscope, and a real-time dynamic image can be observed on a display screen of the computer, so that the computer can realize detection of the TFT array substrate through analytic judgment of the image.
For example, the TFT array substrate is observed by a metallographic microscope under magnification, and the magnified image is photographed to obtain a via hole image, for example, a static via hole image, for example, a dynamic via hole image. For example, the TFT array substrate is locally magnified by a metallographic microscope to obtain a via image, for example, a via image at a local position on the TFT array substrate, for example, a via image of one via on the TFT array substrate, for example, a via image of at least one via on the TFT array substrate. Specifically, the via image is an image of the TFT array substrate including the via and the outside of the via, and it should be understood that the imaging principle of the microscope is that light reflected by an observed object is received by the microscope, and therefore, the via image reflects the light reflection inside and outside the via on the TFT array substrate.
And 140, analyzing the via hole image to obtain a grey scale value outside the via hole and a grey scale value inside the via hole.
In this step, the via hole image is analyzed to obtain the gray scale value outside the via hole and the gray scale value inside the via hole in the via hole image, that is, the gray scale value of the TFT array substrate outside the via hole and the gray scale value of the TFT array substrate inside the via hole are obtained.
In the present embodiment, the gray scale value is used to reflect the light reflection condition of the TFT array substrate, specifically, the gray scale value is to reflect the brightness of the surface of the TFT array substrate, or to reflect the black color of the surface of the TFT array substrate, it should be understood that the higher the brightness of the surface of the TFT array substrate, the lower the gray scale value thereof, and the lower the brightness of the surface of the TFT array substrate, the higher the gray scale value thereof. When the gray value is 0%, the surface thereof appears white, and when the gray value is 100%, the surface thereof appears black.
It should be understood that, in each embodiment, the gray-level value may be a value in the range of 0 to 100%, and for convenience of calculation, the gray-level value may also be a value corresponding to a value in the range of 0 to 100%.
Generally, when the object surface generates specular reflection, the reflected light can be collectively received and observed, so that the higher the brightness of the object surface, the lower the corresponding gray scale value, and when the object surface generates diffuse reflection, the irregular direction of the reflected light is, so that the reflected light cannot be collectively received and observed, and the lower the brightness of the object surface, the higher the corresponding gray scale value. That is, the higher the specular reflectivity of the surface of the TFT array substrate, the higher the brightness of the surface of the TFT array substrate, the lower the corresponding gray scale value, the higher the diffuse reflectivity of the surface of the TFT array substrate, and the lower the brightness of the surface of the TFT array substrate, the higher the corresponding gray scale value. Because the metal layer exposed after the SiN layer is etched is arranged in the through hole, and the SiN layer is arranged outside the through hole, different gray values are arranged inside and outside the through hole, and the through hole image can be obtained by analyzing the through hole image.
Specifically, in this step, the grayscale value outside the via hole is compared with the grayscale value inside the via hole, and whether the difference between the two is smaller than the first preset threshold is compared, for example, the grayscale value outside the via hole is subtracted from the grayscale value inside the via hole to obtain the difference between the grayscale value outside the via hole and the grayscale value inside the via hole, and whether the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than the first preset threshold is detected.
And step 180, judging that an inverse angle exists in the via hole when the difference between the gray value outside the via hole and the gray value inside the via hole is smaller than the first preset threshold value.
Specifically, the surface of the TFT array substrate is etched with via holes, and after etching, the metal layer in the via holes is exposed, and the metal has a good reflective characteristic, generally speaking, when the surface of the metal layer is smooth, mirror reflection is generated, and the surface brightness value is high, so the gray value is low, while the SiN layer has a poor reflective characteristic, so diffuse reflection is easily generated, and the surface brightness value is low, so the gray value is high.
That is, under the condition that the metal layer is not etched or the etching amount is small, the metal layer in the via hole should have higher brightness, that is, lower gray value, so that the difference between the gray value outside the via hole and the gray value in the via hole is larger; if the via hole has an inverse angle, most of the metal near the edge of the inner side of the via hole is etched, so that the surface of the metal layer is uneven, the specular reflectivity of the part of the metal layer is low and mainly diffuse reflection is achieved, namely the diffuse reflectivity is high, the brightness value of the part of the metal layer is low, the gray value is high, and the difference between the gray value outside the via hole and the gray value in the via hole is small.
Therefore, in this step, by comparing the gray value outside the via hole with the gray value inside the via hole, it can be determined whether the metal layer inside the via hole has a large area etched condition, so as to detect whether the via hole has an inverse angle. For example, when the difference between the gray value outside the via hole and the gray value inside the via hole is smaller than the first preset threshold, a large area of the metal layer inside the via hole is etched, and it is determined that an inverse angle exists in the via hole; and when the difference between the gray value outside the through hole and the gray value inside the through hole is greater than or equal to the first preset threshold, the metal layer inside the through hole is not etched, and the through hole is judged to have no reverse angle. For example, the step of determining that the via hole has no reverse angle further includes outputting the determination that the via hole has no reverse angle.
For example, the first preset threshold is 50, for example, whether the difference between the grayscale value outside the via and the grayscale value inside the via is smaller than 50 is detected, and when the difference between the grayscale value outside the via and the grayscale value inside the via is smaller than 50, it is determined that an inverse angle exists in the via.
Through the detection process, the reverse angle of the via hole is judged quickly and efficiently, the TFT array substrate of the defective product can be effectively detected, the TFT array substrate of the defective product is prevented from entering the subsequent procedures for processing, the production cost is low, and the reject ratio of the product is effectively reduced.
It should be understood that the first preset threshold is set according to the manufacturing process of the TFT array substrate and the via etching process, that is, the first preset thresholds corresponding to the TFT array substrates in different processes are different, so that the detection efficiency can be further improved, and the detection accuracy can be improved. For example, for a TFT array substrate with a high requirement on the manufacturing process and quality, the first preset threshold is set to be larger, so that the difference between the gray level outside the via hole and the gray level inside the via hole is larger, and it can be determined that there is no reverse angle when the specular reflectivity of the metal layer inside the via hole is higher, so that the detection accuracy is improved.
In one embodiment, as shown in FIG. 2, step 180 includes:
In this step, in order to further detect whether the metal layer in the via hole is etched or not, so as to improve the detection accuracy of the reverse angle, after comparing the gray-level value outside the via hole with the gray-level value in the via hole, the fluctuation of the gray-level value in the via hole is also detected, specifically, for the metal layer in the via hole, the surface of the metal layer may have an inconsistent condition, that is, a part is etched, and a part is not etched, and the metal layer in the same via hole also has different diffuse reflectance, and in order to detect the condition that the metal layer in the via hole is etched, in this embodiment, the fluctuation of the gray-level value in the via hole is detected.
Specifically, when the etching condition of the partial metal layer in the via hole is serious, the diffuse reflection rate is high, the brightness is low, the gray value is high, and the partial metal layer in the via hole is not etched, the partial metal layer is mainly subjected to mirror reflection, or the mirror reflection rate is high, the brightness is high, and the gray value is low. When the fluctuation of the gray value in the via hole is larger than the second preset threshold value, the fact that part of the metal layer in the via hole is seriously etched is shown, the fluctuation of the gray value in the via hole is larger, and therefore the fact that the via hole has the reverse angle is judged.
To obtain the grayscale values at different locations within the via, for example, step 140 includes analyzing the via image, obtaining a number of grayscale values outside the via and a number of grayscale values within the via, for example, obtaining grayscale values at a number of locations outside the via and obtaining grayscale values at a number of locations within the via. Therefore, a plurality of gray values in the through hole can be obtained, and the fluctuation detection judgment is further carried out on the plurality of gray values in the through hole.
In one embodiment, the step of detecting whether the fluctuation of the gray value within the via is greater than a second preset threshold value comprises: and detecting whether the difference between the maximum value and the minimum value of the gray value in the through hole is larger than a second preset threshold value.
In this embodiment, in order to detect the fluctuation of the grayscale value in the via hole, the maximum value and the minimum value of the grayscale value in the via hole are compared, and whether the difference between the two values is greater than the second preset threshold is detected, and when the difference between the two values is greater than the second preset threshold, it indicates that the fluctuation of the grayscale value in the via hole is greater, it may be determined that the via hole has an inverted angle.
For example, whether the difference between the maximum value and the minimum value of the gray-scale values in the via holes is larger than a second preset threshold value or not is detected, and when the difference between the maximum value and the minimum value of the gray-scale values in the via holes is larger than the second preset threshold value, the via holes are judged to have reverse angles; for example, whether the difference between the maximum value and the minimum value of the grayscale values in the via holes is greater than a second preset threshold is detected, when the difference between the maximum value and the minimum value of the grayscale values in the via holes is less than or equal to the second preset threshold, it is determined that the via holes do not have the reverse angle, specifically, when the difference between the maximum value and the minimum value of the grayscale values is smaller, it indicates that the fluctuation of the grayscale values in the via holes is smaller, and therefore, it is determined that the via holes do not have the reverse angle.
For example, the second predetermined threshold is 20, for example, whether a difference between a maximum value and a minimum value of the grayscale values in the via holes is greater than 20, that is, whether a difference between a peak and a trough is greater than 20 is detected, and when the difference between the maximum value and the minimum value of the grayscale values in the via holes is greater than 20, it is determined that an inverted angle exists in the via holes.
In one embodiment, as shown in FIG. 3, step 184 includes:
184a, when the fluctuation of the gray value in the via hole is greater than the second preset threshold, obtaining a gray value curve in the via hole according to the fluctuation of the gray value in the via hole, and detecting the number of peaks and/or troughs of the gray value curve in the via hole.
In this embodiment, in order to further detect the fluctuation of the gray scale value in the via hole and further obtain the etched condition of the metal layer in the via hole, the gray scale value curve in the via hole is detected. Specifically, the gray value curve in the via hole is composed of a plurality of gray values in the via hole, the fluctuation condition of the gray value can be obtained by analyzing the gray value curve, the gray value corresponding to the peak is larger, the gray value corresponding to the trough is smaller, the number of the peak and the trough is larger, the uneven distribution of the gray value in the via hole is shown, and the metal layer in the via hole is etched in a larger area, so that the fact that the via hole has an inverse angle is judged.
In order to accurately obtain the fluctuation of the gray value in the via, for example, when the number of peaks of the gray value curve in the via is greater than the third preset threshold, it is determined that the via has a reverse angle, for example, when the number of troughs of the gray value curve in the via is greater than the third preset threshold, it is determined that the via has a reverse angle, for example, when the number of peaks and troughs of the gray value curve in the via is greater than the third preset threshold, it is determined that the via has a reverse angle. The fluctuation condition of the gray curve is detected through the number of the wave crests and the wave troughs or the number of the wave crests and the wave troughs, so that the fluctuation of the gray value in the through hole is detected, and the judgment accuracy of the existence of the inverse angle of the through hole is effectively improved.
For example, the third preset threshold is 20, for example, when the number of peaks and troughs of the gray value curve in the via hole is greater than 20, it is determined that an inverse angle exists in the via hole.
In one embodiment, the step of detecting whether the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than a first preset threshold includes: and detecting whether the difference between the average value of the gray values outside the through hole and the average value of the gray values inside the through hole is smaller than a first preset threshold value.
For example, whether the difference between the average value of the gray-scale values outside the via hole and the average value of the gray-scale values inside the via hole is smaller than a first preset threshold is detected, and when the difference between the average value of the gray-scale values outside the via hole and the average value of the gray-scale values inside the via hole is smaller than the first preset threshold, it is determined that an inverted angle exists in the via hole.
In one embodiment, the step of detecting whether the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than a first preset threshold includes: and detecting whether the difference between the maximum value of the gray value outside the through hole and the maximum value of the gray value inside the through hole is smaller than a first preset threshold value.
For example, whether the difference between the maximum value of the grayscale values outside the via hole and the maximum value of the grayscale values inside the via hole is smaller than a first preset threshold is detected, and when the difference between the maximum value of the grayscale values outside the via hole and the maximum value of the grayscale values inside the via hole is smaller than the first preset threshold, it is determined that an inverse angle exists in the via hole.
It should be understood that, when the via hole image is analyzed, a plurality of gray values inside and outside the via hole are obtained respectively, in the above embodiment, in order to improve the contrast accuracy of the gray values and to improve the determination accuracy of the reverse angle, an average value is obtained for a plurality of gray values outside the via hole, an average value is obtained for a plurality of gray values inside the via hole, and the average values of the two are compared, so as to determine whether the reverse angle exists in the via hole according to the comparison result, thereby effectively improving the determination accuracy; or whether the reverse angle exists in the through hole is judged according to the comparison result by comparing the maximum value of the gray value outside the through hole with the maximum value of the gray value in the through hole, so that the judgment accuracy is effectively improved.
It should be understood that, in order to fully and fully detect the reverse angle of the via holes of the TFT array substrate, in an embodiment, the step of taking the image of the via holes by using a metallographic microscope includes: and acquiring the position of at least one through hole on the TFT array substrate. For example, shooting the TFT array substrate by using a metallographic microscope, and acquiring a via hole image includes: and shooting at least one via hole on the TFT array substrate by adopting a metallographic microscope according to the position of the at least one via hole to obtain at least one via hole image.
For example, the positions of a plurality of via holes on the TFT array substrate are obtained, and a metallographic microscope is used to photograph the via holes on the TFT array substrate according to the positions of the via holes, so as to obtain a plurality of via hole images. For example, a metallographic microscope is used for respectively shooting each via hole on the TFT array substrate, and via hole images corresponding to each via hole are respectively obtained.
For example, each via hole image is analyzed, a gray value outside the via hole and a gray value inside the via hole corresponding to each via hole are respectively obtained, whether the difference between the gray value outside the via hole and the gray value inside the via hole corresponding to each via hole is smaller than a first preset threshold value or not is detected, and when the difference between the gray value outside the via hole and the gray value inside the via hole corresponding to at least one via hole is smaller than the first preset threshold value, it is determined that an inverted angle exists in the via hole.
In this embodiment, the plurality of via holes on the TFT array substrate are respectively photographed to obtain a plurality of via hole images, each via hole image is analyzed, and the grayscale value inside each via hole is compared with the grayscale value outside the via hole to detect, so as to determine whether the TFT array substrate has a phenomenon that the via hole has an inverted angle due to excessive etching of the metal layer. The accuracy of judging whether the TFT array substrate is a defective product or not is effectively improved.
In one embodiment, the step of taking a picture of the TFT array substrate by using a metallographic microscope to obtain a via hole image includes: and shooting the TFT array substrate from the direction perpendicular to the TFT array substrate by adopting a metallographic microscope to obtain the via hole image.
It should be understood that, in order to better receive the light reflected by the mirror surface of the TFT array substrate, the incident light is incident in the direction perpendicular to the TFT array substrate, so that the light reflected by the mirror surface of the TFT array substrate will be reflected in the direction perpendicular to the TFT array substrate, that is, reflected in the reverse direction along the incident direction, so that the light reflected by the mirror surface of the TFT array substrate can be received in a concentrated manner, the mirror reflection effect of the smooth metal layer (the metal layer that is not etched) is more obvious, and the detection of the gray value in the via hole of the via hole image is more accurate.
In one embodiment, the step of taking a picture of the TFT array substrate by using a metallographic microscope to obtain a via hole image includes: and shooting the TFT array substrate by adopting a metallographic microscope under the preset objective lens multiplying power to obtain the via hole image.
It should be understood that, the via holes are small relative to the area of the TFT array substrate, and in order to accurately obtain the via hole image, the image of the via holes and the image around the via holes need to be magnified by a large factor, for example, the magnification of the preset objective lens is 1000 times, and for example, the magnification of the preset objective lens is greater than 1000 times and less than 1200 times, so that the through hole image can be accurately and clearly shot by the metallographic microscope, and the detection precision is further effectively improved.
In order to further improve the detection accuracy, for example, a via reverse angle detection method includes: shooting the TFT array substrate by using a metallographic microscope to obtain a via hole image; analyzing the via hole image to obtain a grey scale value outside the via hole and a grey scale value inside the via hole; detecting whether the difference between the gray value outside the through hole and the gray value in the through hole is smaller than a first preset threshold, detecting whether the difference between the maximum value and the minimum value of the gray value in the through hole is larger than a second preset threshold, and detecting the number of wave crests and/or wave troughs of a gray value curve in the through hole; and when the difference between the gray value outside the through hole and the gray value in the through hole is smaller than the first preset threshold, and when the difference between the maximum value and the minimum value of the gray value in the through hole is larger than a second preset threshold, and the number of wave crests and/or wave troughs of the gray value curve in the through hole is larger than a third preset threshold, judging that the through hole has an inverse angle. In this embodiment, when the difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than the first preset threshold, and the difference between the maximum value and the minimum value of the grayscale value inside the via hole is larger than the second preset threshold, and the number of the wave crests and/or the wave troughs of the grayscale value curve inside the via hole is larger than the third preset threshold, and the three conditions are simultaneously met, it is determined that an inverted angle exists in the via hole, so that the probability of erroneous determination can be further reduced, and the determination result is more accurate.
In one embodiment, as shown in fig. 4, a via reverse angle detection apparatus is provided, which includes: via image acquisition module 220, grayscale value acquisition module 240, detection module 260, and determination module 280.
And the via hole image acquisition module 220 is used for shooting the TFT array substrate by using a metallographic microscope to acquire a via hole image.
And the gray value obtaining module 240 is configured to analyze the via hole image and obtain a gray value outside the via hole and a gray value inside the via hole.
The detecting module 260 is configured to detect whether a difference between a grayscale value outside the via hole and a grayscale value inside the via hole is smaller than a first preset threshold.
The determining module 280 is configured to determine that an inverse angle exists in the via hole when a difference between the grayscale value outside the via hole and the grayscale value inside the via hole is smaller than the first preset threshold.
In one embodiment, as shown in FIG. 5, the decision module 280 includes:
a fluctuation detection unit 282, configured to detect whether a fluctuation of the grayscale value in the via hole is greater than a second preset threshold when a difference between the grayscale value outside the via hole and the grayscale value in the via hole is smaller than the first preset threshold;
and the determining unit 284 is configured to determine that an inverse angle exists in the via hole when the fluctuation of the grayscale value in the via hole is greater than the second preset threshold.
In one embodiment, the determining unit 284 is further configured to detect whether a difference between a maximum value and a minimum value of the gray-level values in the via holes is greater than a second preset threshold.
In one embodiment, as shown in fig. 6, the determining unit 284 includes:
a gray-value curve detecting subunit 284a, configured to, when the fluctuation of the gray-value in the via hole is greater than the second preset threshold, obtain a gray-value curve in the via hole according to the fluctuation of the gray-value in the via hole, and detect the number of peaks and/or troughs of the gray-value curve in the via hole.
And the determination subunit 284b is configured to determine that an inverse angle exists in the via hole when the number of peaks and/or troughs of the grayscale value curve in the via hole is greater than the third preset threshold.
In one embodiment, the detecting module 260 is further configured to detect whether a difference between an average value of the grayscale values outside the via hole and an average value of the grayscale values inside the via hole is smaller than a first preset threshold.
In one embodiment, the detecting module 260 is further configured to detect whether a difference between a maximum value of the grayscale values outside the via hole and a maximum value of the grayscale values inside the via hole is smaller than a first preset threshold.
It should be understood that the modules in the above-described via reverse angle detection apparatus may be implemented in whole or in part by software, hardware, and a combination thereof. For example, in terms of hardware implementation, the via image acquiring module is configured to acquire a via image sent by the metallographic microscope through a network interface, a serial data interface, or a universal serial bus of a computer. The network interface may be an ethernet card or a wireless network card, and the serial data interface includes RS232 and RS 485. The modules can be embedded in a hardware form or a processor independent of a computer, and can also be stored in a memory of the computer in a software form, so that the processor can call and execute operations corresponding to the modules. The processor may be a Central Processing Unit (CPU), a microprocessor, or the like.
In one embodiment, as shown in FIG. 7, a computer is provided that includes a processor, an internal memory, a non-volatile storage medium, and a network interface connected by a system bus. The computer comprises a nonvolatile storage medium and an operating system, wherein the nonvolatile storage medium of the computer stores the operating system and computer readable instructions, and the computer readable instructions are used for executing a via hole reverse angle detection method. The processor of the computer is used for providing calculation and control capability and supporting the operation of the whole computer. The network interface of the computer is used for connecting the metallographic microscope and communicating with the metallographic microscope. The computer may be a stand-alone computer or a clustered computer. Those skilled in the art will appreciate that the structure shown in fig. 7 is only a block diagram of a part of the structure related to the present application, and does not constitute a limitation to the computer to which the present application is applied. A particular computer may include more or fewer components than shown, or some components may be combined, or have a different arrangement of components.
In one embodiment, a computer device includes a memory, a processor, and computer readable instructions stored on the memory and executable on the processor, the processor implementing the following steps when executing the computer readable instructions: shooting the TFT array substrate through a metallographic microscope to obtain a via hole image; analyzing the via hole image to obtain a grey scale value outside the via hole and a grey scale value inside the via hole; detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not; and when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, judging that an inverse angle exists in the through hole.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A via hole reverse angle detection method is characterized by comprising the following steps:
shooting the TFT array substrate by using a metallographic microscope to obtain a via hole image;
analyzing the via hole image to obtain a gray value outside the via hole and a gray value inside the via hole, wherein a metal layer exposed after an SiN layer is etched is arranged inside the via hole, and the SiN layer is arranged outside the via hole;
detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not;
when the difference between the gray value outside the via hole and the gray value inside the via hole is smaller than the first preset threshold, judging that the via hole has an inverse angle, namely judging that most of the metal near the edge inside the via hole is etched, so that the surface of the metal layer is uneven;
when the difference between the gray value outside the via hole and the gray value inside the via hole is smaller than the first preset threshold, the step of determining that the via hole has an inverse angle includes:
when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, detecting whether the fluctuation of the gray value inside the through hole is larger than a second preset threshold;
and when the fluctuation of the gray value in the through hole is larger than the second preset threshold value, judging that the through hole has an inverse angle.
2. The method according to claim 1, wherein the step of detecting whether the fluctuation of the grayscale value in the via is greater than a second preset threshold comprises:
and detecting whether the difference between the maximum value and the minimum value of the gray value in the through hole is larger than the second preset threshold value.
3. The method according to claim 1, wherein the step of determining that the via hole has the reverse angle when the fluctuation of the grayscale value in the via hole is greater than the second preset threshold comprises:
when the fluctuation of the gray value in the through hole is larger than the second preset threshold, acquiring a gray value curve in the through hole according to the fluctuation of the gray value in the through hole, and detecting whether the number of wave crests and/or wave troughs of the gray value curve in the through hole is larger than a third preset threshold;
and when the number of wave crests and/or wave troughs of the gray value curve in the through hole is larger than the third preset threshold value, judging that the through hole has an inverse angle.
4. The method according to claim 1, wherein the step of detecting whether the difference between the grayscale value outside the via and the grayscale value inside the via is smaller than a first preset threshold comprises:
and detecting whether the difference between the average value of the gray values outside the through hole and the average value of the gray values inside the through hole is smaller than the first preset threshold value.
5. The method according to claim 1, wherein the step of detecting whether the difference between the grayscale value outside the via and the grayscale value inside the via is smaller than a first preset threshold comprises:
and detecting whether the difference between the maximum value of the gray value outside the through hole and the maximum value of the gray value inside the through hole is smaller than the first preset threshold value.
6. The method according to claim 1, wherein the first preset threshold is set according to a manufacturing process of the TFT array substrate and the via etching process.
7. The via hole reverse angle detection method according to claim 1, wherein the step of taking a picture of the TFT array substrate by using a metallographic microscope to obtain a via hole image comprises:
and shooting the TFT array substrate from the direction perpendicular to the TFT array substrate by adopting a metallographic microscope to obtain the via hole image.
8. The utility model provides a reverse angle detection device of via hole which characterized in that includes:
the via hole image acquisition module is used for shooting the TFT array substrate by adopting a metallographic microscope to acquire a via hole image;
the grey value acquisition module is used for analyzing the via hole image and acquiring the grey value outside the via hole and the grey value inside the via hole, wherein a metal layer exposed after an SiN layer is etched is arranged inside the via hole, and the SiN layer is arranged outside the via hole;
the detection module is used for detecting whether the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than a first preset threshold value or not;
a determining module, configured to determine that an inverted angle exists in the via when a difference between a grayscale value outside the via and a grayscale value inside the via is smaller than the first preset threshold, that is, it is determined that most of the metal near an inner edge of the via has been etched, which results in uneven surface of the metal layer, where the step of determining that an inverted angle exists in the via when the difference between the grayscale value outside the via and the grayscale value inside the via is smaller than the first preset threshold includes:
when the difference between the gray value outside the through hole and the gray value inside the through hole is smaller than the first preset threshold, detecting whether the fluctuation of the gray value inside the through hole is larger than a second preset threshold;
and when the fluctuation of the gray value in the through hole is larger than the second preset threshold value, judging that the through hole has an inverse angle.
9. The via reverse angle detection device of claim 8, wherein the determination module comprises:
the fluctuation detection unit is used for detecting whether the fluctuation of the gray value in the through hole is larger than a second preset threshold value or not when the difference between the gray value outside the through hole and the gray value in the through hole is smaller than the first preset threshold value;
and the judging unit is used for judging that the via hole has an inverse angle when the fluctuation of the gray value in the via hole is larger than the second preset threshold value.
10. The via reverse angle detection device according to claim 9, wherein the determination unit includes:
the gray value curve detection subunit is configured to, when the fluctuation of the gray value in the via hole is greater than the second preset threshold, obtain a gray value curve in the via hole according to the fluctuation of the gray value in the via hole, and detect whether the number of peaks and/or troughs of the gray value curve in the via hole is greater than a third preset threshold;
and the judging subunit is used for judging that an inverse angle exists in the through hole when the number of wave crests and/or wave troughs of the gray value curve in the through hole is larger than the third preset threshold.
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