CN107731682B - Substrate processing method and substrate processing apparatus - Google Patents
Substrate processing method and substrate processing apparatus Download PDFInfo
- Publication number
- CN107731682B CN107731682B CN201710680020.1A CN201710680020A CN107731682B CN 107731682 B CN107731682 B CN 107731682B CN 201710680020 A CN201710680020 A CN 201710680020A CN 107731682 B CN107731682 B CN 107731682B
- Authority
- CN
- China
- Prior art keywords
- bias voltage
- film
- substrate
- plasma
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
The invention provides a substrate processing method capable of inhibiting the reduction of the etching rate of a metal film formed on an organic film. When etching with plasma is performed on a substrate (S) having a metal film (30) formed on an organic insulating film (26), a bias voltage for introducing positive ions (34) in the plasma into the substrate (S) is applied in a pulsed manner.
Description
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus for etching a metal film formed on an organic film.
Background
In a semiconductor device formed on a glass substrate used for a Flat Panel Display (FPD) such as a Liquid Crystal Display (LCD), when a source electrode and a drain electrode of a TFT (Thin Film Transistor) are formed from a titanium/aluminum/titanium Film, which is a metal Film formed by laminating a titanium Film, an aluminum Film, and a titanium Film in this order from a lower layer side, the titanium/aluminum/titanium Film is etched by plasma generated in a chamber by a chlorine-containing reaction gas. At this time, a compound of chlorine and aluminum is generated, and this compound may inhibit the subsequent etching of the titanium/aluminum/titanium film.
Therefore, the following scheme is proposed: after the titanium/aluminum/titanium film is etched by plasma, oxygen gas is supplied into the chamber while the chamber is once evacuated to perform oxygen purging (purge), whereby the above compound is reacted with oxygen gas to be decomposed and exhausted (see, for example, patent document 1).
However, in a TFT using LTPS (Low Temperature polysilicon), a titanium/aluminum/titanium film, which is a metal film and is formed by stacking a titanium film, an aluminum film, and a titanium film in this order from the lower layer side, is formed on an organic film, which is an insulating film, and the titanium/aluminum/titanium film is etched by plasma to form a source electrode and a drain electrode.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication (JP 2015-76487)
Disclosure of Invention
Technical problem to be solved by the invention
However, when the source electrode and the drain electrode are formed of a titanium/aluminum/titanium film, a part of the organic film may be exposed as etching proceeds. The exposed organic film is also exposed to plasma and etched, and at this time, the organic component generated by peeling the organic film is scattered as a blocking substance to cover the titanium/aluminum/titanium film. The blocking substance covering the titanium/aluminum/titanium film partially masks the titanium/aluminum/titanium film from the plasma, and as a result, there arises a problem that the etching rate of the titanium/aluminum/titanium film is lowered.
The invention aims to provide a substrate processing method and a substrate processing device which can inhibit the reduction of the etching rate of a metal film formed on an organic film.
In order to achieve the above object, a substrate processing method according to the present invention is a substrate processing method for performing etching by plasma on a substrate having a metal film formed on an organic film, the substrate processing method including applying a bias voltage for introducing positive ions of the plasma into the substrate in a pulsed manner.
In order to achieve the above object, a substrate processing apparatus according to the present invention is a substrate processing apparatus for performing etching by plasma on a substrate having a metal film formed on an organic film, wherein a bias voltage for introducing positive ions of the plasma into the substrate is applied in a pulsed manner.
Effects of the invention
According to the present invention, since the bias voltage for introducing the positive ions of the plasma to the substrate is applied in a pulse manner, the time for physically etching the organic film mainly stripped by the physical etching is substantially shortened, the inhibitor composed of the organic component generated by stripping the organic substance is reduced, and the metal film is hardly covered with the inhibitor. Further, since the metal film is peeled mainly by chemical etching, the peeling of the metal film continues even when a time during which no bias voltage is applied occurs. Therefore, the decrease in the etching rate of the metal film can be suppressed.
Drawings
Fig. 1 is a sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a partial sectional view schematically showing the structure of a TFT formed on a substrate etched by plasma in the substrate processing apparatus of fig. 1.
Fig. 3 is a process diagram for explaining a method of etching the metal film when forming the drain and source electrodes of fig. 2.
Fig. 4 is a sequence diagram showing the application method of the bias voltage in the substrate processing method of the present embodiment.
Fig. 5 is a process diagram for explaining an etching method in the substrate processing method according to the present embodiment.
Fig. 6 is a sequence diagram showing a first modification of the application method of the bias voltage in the substrate processing method according to the present embodiment.
Fig. 7 is a sequence diagram showing a second modification of the application method of the bias voltage in the substrate processing method according to the present embodiment.
Description of the reference numerals
S substrate
10 substrate processing apparatus
17 bias high frequency power supply
26 organic insulating film
30 metal film
31 lower layer titanium film.
Detailed Description
Embodiments of the present invention will be described below with reference to the drawings.
Fig. 1 is a sectional view schematically showing the structure of a substrate processing apparatus according to the present embodiment.
In fig. 1, a substrate processing apparatus 10 is an inductively coupled plasma processing apparatus, and includes: a substantially rectangular chamber 11; a susceptor 12 as a mounting table disposed below the chamber 11 for mounting a substrate S on the top thereof; a dielectric window 13 constituting the top of the chamber 11; an inductive coupling antenna 14 made of a spiral conductor and disposed opposite to the base 12 with a dielectric window 13 interposed therebetween; a gas supply mechanism 15 for supplying a process gas into the chamber 11; and an exhaust pipe 16 for exhausting the inside of the chamber 11, wherein a processing space PS is formed between the susceptor 12 and the dielectric window 13. In the present embodiment, a glass substrate used for an FPD such as an LCD is used as the substrate S, but a wafer made of silicon and formed by cutting semiconductor chips may be used as the substrate S.
The susceptor 12 is connected to a high-frequency bias power supply 17 via a matching unit 18. The bias high-frequency power supply 17 applies a bias voltage to the susceptor 12, and generates a bias potential in the susceptor 12. The inductive coupling antenna 14 is connected to a high-frequency power supply 19 for plasma generation via a matching box 20, and the high-frequency power supply 19 for plasma generation supplies high-frequency power for plasma generation to the inductive coupling antenna 14. The inductive coupling antenna 14 for supplying high-frequency power for plasma generation generates an electric field in the processing space PS.
In the substrate processing apparatus 10, when etching the substrate S with plasma, the processing space PS is depressurized, a processing gas is introduced into the processing space PS, and high-frequency power for generating plasma is applied to the inductive coupling antenna 14, thereby generating an electric field in the processing space PS. The process gas introduced into the process space PS is excited by an electric field to generate plasma, and cations in the plasma are introduced into the substrate S by a bias potential generated on the substrate S by the susceptor 12, thereby physically etching the substrate S. Then, the radicals in the plasma reach the substrate S, and the substrate S is chemically etched. In the substrate processing apparatus 10, the inductively coupled antenna 14 is disposed so as to cover the entire surface of the substrate S, and therefore, plasma is generated so as to cover the entire surface of the substrate S, and the entire surface of the substrate S is uniformly etched by the plasma. When the substrate processing apparatus 10 performs etching on the substrate S, the apparatus controller 21 controls the operations of the respective components of the substrate processing apparatus 10 according to a predetermined program.
Fig. 2 is a partial sectional view schematically showing the structure of a TFT formed on a substrate etched by plasma in the substrate processing apparatus of fig. 1.
The TFT22 in fig. 2 includes: a channel 23 composed of LTPS; a gate electrode 25 facing the trench 23 with a gate insulating film 24 interposed therebetween; an organic insulating film 26 formed of an organic component (mainly carbon) on the gate insulating film 24; n-type LTPS films 27 formed on both sides of the channel 23 and composed of impurity-doped LTPS; and a drain electrode 28 and a source electrode 29 formed on the organic insulating film 26 and in contact with each n-type LTPS film 27 through the gate insulating film 24 and the organic insulating film 26. In the TFT22, a metal film 30 made of a titanium/aluminum/titanium film formed on an organic insulating film 26 is formed into a desired shape to form a drain electrode 28 and a source electrode 29.
Fig. 3 is a process diagram for explaining an etching method performed on the metal film when forming the drain and source electrodes of fig. 2.
First, a metal film 30 is formed on the organic insulating film 26 by CVD (Chemical Vapor Deposition) or PVD (Physical Vapor Deposition). The metal film 30 is a three-layer film, and is formed by stacking a lower titanium film 31, an aluminum film 32, and an upper titanium film 33 in this order from below. Then, the metal film 30 is covered with a masking film (not shown) of a predetermined pattern.
Next, the gas supply device 15 supplies a gas including chlorine-based gas, such as chlorine (Cl), into the chamber 112) Gas or boron trichloride (BCl)3) A gas and a rare gas, for example, a process gas such as argon (Ar) gas, and the high-frequency power supply 19 for plasma generation supplies high-frequency power for plasma generation to the inductive coupling antenna 14. At this time, the process gas is excited by the electric field generated in the process space PS to generate plasma. When the bias high-frequency power supply 17 supplies a bias voltage to the susceptor 12, as shown in fig. 3 a, positive ions 34 (shown as "●" in the drawing) of chlorine and argon in the plasma are introduced into the substrate S, and the metal film 30 is physically etched by sputtering the positive ions 34. When the radicals 35 (indicated by ". smallcircle") of chlorine in the plasma drift in the processing space PS and reach the substrate S, the metal film 30 is chemically etched. The upper titanium film 33, the aluminum film 32, and the lower titanium film 31 are peeled off in this order in the metal film 30 by these physical etching and chemical etching.
Here, when the metal film 30 is subjected to physical etching or chemical etching, the etching rate of each part of the metal film 30 may be different depending on the pattern of the mask film. At this time, as shown in fig. 3 (B), the amount of cutting of each portion of the metal film 30 varies, and eventually the organic insulating film 26 may be partially exposed.
Then, when the etching by plasma is continued, the exposed organic insulating film 26 is also physically etched by sputtering of the cations 34, and if the organic insulating film 26 is peeled off by the physical etching, the organic component of the organic insulating film 26 is scattered as the blocking substance 36 (indicated as "circleincircle" in the drawing). The sputtered barrier substance 36 is deposited on the metal film 30, for example, the lower titanium film 31, partially covers the lower titanium film 31 ((C) of fig. 3), and masks the lower titanium film 31 from the cations 34 and radicals 35. As a result, the radicals 35 hardly reach the lower titanium film 31, and the progress of chemical etching is suppressed, thereby lowering the etching rate of the lower titanium film 31.
In the present embodiment, in order to cope with this, the amount of peeling of the organic insulating film 26 is reduced to suppress the generation of the inhibitor 36. Here, it is known that metals such as titanium and aluminum are mainly peeled off by chemical etching, while organic films are mainly peeled off by physical etching. Therefore, in this embodiment, the time for physically etching the organic film is substantially shortened. Specifically, by preventing cations 34 from being continuously drawn into the exposed organic insulating film 26 without continuously applying a bias voltage to the susceptor 12, physical etching by sputtering of the cations 34 is suppressed from being continuously performed on the exposed organic insulating film 26.
Fig. 4 is a sequence diagram showing the application method of the bias voltage in the substrate processing method of the present embodiment. Fig. 5 is a process diagram for explaining an etching method in the substrate processing method according to the present embodiment.
As shown in fig. 4, in the substrate processing apparatus 10, when the metal film 30 is etched by plasma, the bias high-frequency power supply 17 applies a bias voltage to the susceptor 12 in a pulse manner. Specifically, application of a bias voltage (hereinafter referred to as "bias on") and non-application of the bias voltage (hereinafter referred to as "bias off") are periodically repeated, and the time ratio of bias on (hereinafter referred to as "duty") in pulsed application of the bias voltage is set to 50% to 70%. In the pulse application of the bias voltage, particularly when the bias is turned off after the organic insulating film 26 is partially exposed, the exposed organic insulating film 26 is chemically etched only, and physical etching is not performed any more. At this time, since the organic insulating film 26 is hardly peeled off, the blocking substance 36 is hardly scattered (fig. 5 a). On the other hand, when the bias on state is established, the exposed organic insulating film 26 is not only chemically etched but also physically etched, and as a result, the blocking substance 36 is scattered (fig. 5 (B)). However, since the duty ratio is set to 50% to 70% as described above, the total amount of the inhibitor 36 that is scattered when the bias voltage is applied in a pulse manner is reduced as compared with the total amount of the inhibitor 36 that is scattered when the bias voltage is continuously applied, specifically, the total amount of the inhibitor 36 that is scattered when the bias voltage is continuously applied is kept at 50% to 70%. Therefore, the amount of the inhibiting substance covering the lower titanium film 31 is reduced, and the radicals 35 do not reach the lower titanium film 31 easily. Further, since the lower titanium film 31 is peeled mainly by chemical etching as described above, even if the bias is turned off, the lower titanium film 31 cannot be physically etched, and peeling of the lower titanium film 31 continues. As a result, the etching rate of the lower titanium film 31 can be suppressed from decreasing. Further, since peeling of the exposed organic insulating film 26 is suppressed by the pulse application of the bias voltage, the selection ratio of the lower titanium film 31 to the organic insulating film 26 can be maintained at a high value.
Further, when the time of bias off is long, it may be difficult to maintain plasma in the processing space PS, but the duty ratio is set to 50% to 70%, and the time of bias off is not excessively long, so that it is possible to suppress disappearance of plasma in the processing space PS.
The present invention has been described above with reference to the above embodiments, but the present invention is not limited to the above embodiments.
For example, the metal film 30 is not limited to a titanium/aluminum/titanium film, and may be mainly composed of a metal that can be peeled off by chemical peeling, and any of a single layer film and a multilayer film may be used as long as it is composed of such a metal. The substrate processing apparatus 10 is configured by a so-called inductively coupled plasma processing apparatus, but the present invention is applicable to any plasma processing apparatus to which a bias voltage can be applied, and for example, the present invention can also be applied to a capacitively coupled plasma processing apparatus (specifically, a parallel-plate type plasma processing apparatus).
The present invention is applied to an environment in which a metal film and an organic film are mixed, but the present invention can be applied to an environment in which a film mainly peeled by physical etching and a film mainly peeled by chemical etching are mixed and it is not intended to reduce the etching rate of the film peeled by chemical etching.
In the present embodiment described above, the bias voltage is applied in pulses at a duty ratio of 50% to 70%, but the manner of applying the bias voltage in pulses is not limited to this. For example, as shown in fig. 6, when etching the metal film 30 with plasma, the bias voltage may be continuously applied at first, and then the bias voltage may be applied in a pulse manner at a certain time. Here, the certain time may be a time earlier by a predetermined time than when the organic insulating film 26 is partially exposed, for example. Thus, the metal film 30 can be peeled not only by chemical etching but also by physical etching until the organic insulating film 26 is partially exposed. As a result, the etching rate of the metal film 30 can be increased until the organic insulating film 26 is partially exposed, and throughput (throughput) can be improved. Further, by starting the pulsed application of the bias voltage from a time earlier than the time when the organic insulating film 26 is partially exposed by a predetermined time, it is possible to reliably prevent the exposed organic insulating film 26 from being continuously physically etched, and thus it is possible to suppress a rapid increase in the amount of the inhibitor 36 to be generated. The timing at which the organic insulating film 26 is partially exposed can be observed by an EPD (End Point Detector) that monitors the light emission state in the chamber 11. However, even if the organic insulating film 26 is exposed, the light emission state in the chamber 11 does not change greatly, but rather, when the aluminum film 32 is peeled off and the lower titanium film 31 is exposed, the light emission state in the chamber 11 changes greatly, and therefore, the timing at which the lower titanium film 31 is exposed can be observed by EPD, and the bias voltage is started to be applied at the timing at which the lower titanium film 31 is exposed.
In the present embodiment described above, the exposed organic insulating film 26 increases as the etching by plasma proceeds, and the amount of peeling of the organic insulating film 26 may increase, and to cope with this, as shown in fig. 7, the duty ratio of the pulsed application of the bias voltage may be decreased as the etching proceeds. This can substantially shorten the time for which the organic insulating film 26 is physically etched as the exposed organic insulating film 26 increases, and can prevent an increase in the amount of peeling of the organic insulating film 26. As a result, even if the exposed organic insulating film 26 increases, the amount of the inhibitor 36 generated can be suppressed from increasing, and the etching rate of the underlying titanium film 31 can be reliably suppressed from decreasing.
The object of the present invention can also be achieved by supplying a storage medium, in which program codes of software for implementing the functions of the above-described embodiments are stored, to the apparatus controller 21 of the substrate processing apparatus 10, and reading the program codes stored in the storage medium by the CPU of the controller 21.
At this time, the program code itself read from the storage medium realizes the functions of the above-described embodiments, and the program code and the storage medium storing the program code constitute the present invention.
Examples of the storage medium for supplying the program code include an optical disk such as a RAM, NV-RAM, floppy (registered trademark) disk, hard disk, magneto-optical disk, CD-ROM, CD-R, CD-RW, or DVD (DVD-ROM, DVD-RAM, DVD-RW, or DVD + RW), a magnetic tape, a nonvolatile memory card, and other ROM that can store the program code. Alternatively, the program code may be downloaded from another computer or a database, not shown, connected to the internet, a commercial network, a local area network, or the like, and supplied to the apparatus controller 21.
Note that the functions of the above-described embodiments are realized not only by the CPU executing the read program code, but also by the OS (operating system) or the like running on the CPU performing a part or all of actual processing based on instructions of the program code, and realizing the functions of the above-described embodiments by this processing.
Further, the present invention also includes a case where a program code read from a storage medium is written in a memory provided in a function expansion card or a function expansion unit connected to the device controller 21, and then a CPU or the like provided in the function expansion card or the function expansion unit performs a part or all of actual processing based on an instruction of the program code, and the functions of the above-described embodiments are realized by the processing.
The program code may be provided in the form of object code, program code executed by an interpreter, script data provided to an OS, or the like.
[ examples ] A method for producing a compound
Next, an embodiment of the present invention will be explained.
First, in the substrate processing apparatus 10, a mixed gas of chlorine gas and boron trichloride is supplied as a processing gas into the chamber 11, an electric field is generated in the processing space PS by the inductive coupling antenna 14, and plasma is generated from the processing gas. Then, the etching rates of the lower titanium film 31 and the organic insulating film 26 were measured when a bias voltage was continuously applied to the susceptor 12 on which the substrate S was placed (comparative example). The etching rate of the lower titanium film 31 at this time was 210.5 nm/min, the etching rate of the organic insulating film 26 was 209.4 nm/min, and the selectivity of the lower titanium film 31 to the organic insulating film 26 was 1.
Next, in the substrate processing apparatus 10, after plasma was generated under the same conditions as in the comparative example, the etching rates of the lower titanium film 31 and the organic insulating film 26 were measured when a bias voltage was applied to the susceptor 12 in a pulsed manner at a duty ratio of 50% (example). At this time, the etching rate of the lower titanium film 31 was 293.7 nm/min, the etching rate of the organic insulating film 26 was 163.8 nm/min, and the selectivity of the lower titanium film 31 to the organic insulating film 26 was 1.79.
As a result, it is possible to increase the etching rate of the organic insulating film when the bias voltage is applied in a pulse manner as compared with when the bias voltage is continuously applied, and further, to maintain the selection ratio of the lower titanium film 31 to the organic insulating film 26 at a high value.
Claims (9)
1. A substrate processing method for performing etching by plasma on a substrate having a metal film formed over an organic film, characterized in that,
etching the metal film by successively applying a bias voltage for introducing positive ions of the plasma into the substrate, then starting pulse application of the bias voltage at a predetermined time earlier than when the organic film is exposed, and continuing pulse application of the bias voltage even after the organic film is exposed,
the duty ratio when the bias voltage is applied in a pulse mode is 50% -70%.
2. A substrate processing method for performing etching by plasma on a substrate having a metal film formed over an organic film, characterized in that,
etching the metal film by successively applying a bias voltage for introducing positive ions of the plasma into the substrate, then starting pulse application of the bias voltage at a predetermined time earlier than when the organic film is exposed, and continuing pulse application of the bias voltage even after the organic film is exposed,
the duty ratio of the pulsed application of the bias voltage is reduced as the etching proceeds.
3. The substrate processing method according to claim 1 or 2,
the metal film contains at least titanium.
4. The substrate processing method according to claim 1 or 2,
the metal film includes at least aluminum.
5. The substrate processing method according to claim 3,
the metal film is composed of a titanium/aluminum/titanium film in which a titanium film, an aluminum film, and a titanium film are laminated in this order from the lower layer side.
6. The substrate processing method according to claim 1 or 2,
the plasma is generated from a process gas containing a chlorine-based gas.
7. The substrate processing method of claim 6,
the chlorine-based gas includes chlorine (Cl)2) Gas or boron trichloride (BCl)3) A gas.
8. A substrate processing apparatus for performing etching by plasma on a substrate having a metal film formed over an organic film, comprising:
a high-frequency power supply for bias, which applies a bias voltage for introducing positive ions of the plasma into the substrate; and
a controller for controlling the bias high-frequency power supply so that the bias voltage is continuously applied first, then the bias voltage is applied in a pulse manner at a predetermined time earlier than when the organic film is exposed, and the pulse application of the bias voltage is continued even after the organic film is exposed, thereby etching the metal film,
the duty ratio when the bias voltage is applied in a pulse mode is 50% -70%.
9. A substrate processing apparatus for performing etching by plasma on a substrate having a metal film formed over an organic film, comprising:
a high-frequency power supply for bias, which applies a bias voltage for introducing positive ions of the plasma into the substrate; and
a controller for controlling the bias high-frequency power supply so that the bias voltage is continuously applied first, then the bias voltage is applied in a pulse manner at a predetermined time earlier than when the organic film is exposed, and the pulse application of the bias voltage is continued even after the organic film is exposed, thereby etching the metal film,
the controller reduces a duty ratio at which the bias voltage is applied in pulses along with the progress of the etching.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-158745 | 2016-08-12 | ||
| JP2016158745A JP6789721B2 (en) | 2016-08-12 | 2016-08-12 | Substrate processing method and substrate processing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107731682A CN107731682A (en) | 2018-02-23 |
| CN107731682B true CN107731682B (en) | 2021-10-26 |
Family
ID=61194739
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710680020.1A Active CN107731682B (en) | 2016-08-12 | 2017-08-10 | Substrate processing method and substrate processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6789721B2 (en) |
| KR (1) | KR102011567B1 (en) |
| CN (1) | CN107731682B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019244700A1 (en) * | 2018-06-22 | 2019-12-26 | 東京エレクトロン株式会社 | Plasma processing device and plasma etching method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574251A (en) * | 2003-06-03 | 2005-02-02 | 大日本网目版制造株式会社 | Substrate etching method and etching disposal device |
| JP2006120983A (en) * | 2004-10-25 | 2006-05-11 | Hitachi High-Technologies Corp | Plasma etching method |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3629705B2 (en) * | 1997-06-06 | 2005-03-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JPH11340213A (en) * | 1998-03-12 | 1999-12-10 | Hitachi Ltd | Surface treatment method for sample |
| JP4583533B2 (en) * | 1999-12-27 | 2010-11-17 | 株式会社半導体エネルギー研究所 | Method for forming metal wiring |
| JP2002016047A (en) * | 2000-06-29 | 2002-01-18 | Nec Corp | Wiring etching method for semiconductor device |
| JP2002294470A (en) * | 2001-04-02 | 2002-10-09 | Sony Corp | Etching method |
| US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
| JP5361651B2 (en) * | 2008-10-22 | 2013-12-04 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5221403B2 (en) * | 2009-01-26 | 2013-06-26 | 東京エレクトロン株式会社 | Plasma etching method, plasma etching apparatus and storage medium |
| JP5558224B2 (en) * | 2010-06-23 | 2014-07-23 | 東京エレクトロン株式会社 | Substrate processing method |
| JP2015076487A (en) | 2013-10-08 | 2015-04-20 | 株式会社ジャパンディスプレイ | Method of manufacturing liquid crystal display device |
-
2016
- 2016-08-12 JP JP2016158745A patent/JP6789721B2/en active Active
-
2017
- 2017-08-10 CN CN201710680020.1A patent/CN107731682B/en active Active
- 2017-08-10 KR KR1020170101375A patent/KR102011567B1/en active IP Right Grant
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1574251A (en) * | 2003-06-03 | 2005-02-02 | 大日本网目版制造株式会社 | Substrate etching method and etching disposal device |
| JP2006120983A (en) * | 2004-10-25 | 2006-05-11 | Hitachi High-Technologies Corp | Plasma etching method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6789721B2 (en) | 2020-11-25 |
| JP2018026501A (en) | 2018-02-15 |
| KR102011567B1 (en) | 2019-08-16 |
| CN107731682A (en) | 2018-02-23 |
| KR20180018409A (en) | 2018-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102426264B1 (en) | Etching method | |
| US20200111646A1 (en) | Substrate processing apparatus and substrate processing method | |
| US9337056B2 (en) | Semiconductor device manufacturing method | |
| KR101937727B1 (en) | Etching method | |
| KR20190135413A (en) | Method of etching film and plasma processing apparatus | |
| JP6454492B2 (en) | Method for etching a multilayer film | |
| KR102496968B1 (en) | etching method | |
| US6784110B2 (en) | Method of etching shaped features on a substrate | |
| KR20210061937A (en) | Method for etching film and plasma processing apparatus | |
| KR20220099942A (en) | Plasma processing apparatus | |
| CN107731682B (en) | Substrate processing method and substrate processing apparatus | |
| US20200126801A1 (en) | Etching method and plasma processing apparatus | |
| US9418869B2 (en) | Method to etch a tungsten containing layer | |
| KR20210023738A (en) | Etching method and substrate processing apparatus | |
| CN110783260A (en) | Etching method | |
| JP2021118221A (en) | Film formation method and film formation device | |
| KR20200113170A (en) | Method of etching film and plasma processing apparatus | |
| TW202123334A (en) | Plasma processing method and plasma processing apparatus | |
| KR19980033895A (en) | Etch Chamber with Independently Controlled Three Electrodes | |
| JP2015032780A (en) | Plasma processing apparatus and plasma processing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |