CN107707242A - A kind of bipolar transistor driving circuit of insulated gate - Google Patents
A kind of bipolar transistor driving circuit of insulated gate Download PDFInfo
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- CN107707242A CN107707242A CN201710897376.0A CN201710897376A CN107707242A CN 107707242 A CN107707242 A CN 107707242A CN 201710897376 A CN201710897376 A CN 201710897376A CN 107707242 A CN107707242 A CN 107707242A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00307—Modifications for increasing the reliability for protection in bipolar transistor circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00353—Modifications for eliminating interference or parasitic voltages or currents in bipolar transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/007—Fail-safe circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
- H03K19/017518—Interface arrangements using a combination of bipolar and field effect transistors [BIFET]
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- General Engineering & Computer Science (AREA)
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- Power Conversion In General (AREA)
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Abstract
The invention provides a kind of bipolar transistor driving circuit of insulated gate, including：Primary side power supply circuit；The secondary power supply circuit being connected with the primary side power supply circuit, the secondary power supply circuit include：Flash drive circuit and low side drive circuit, the flash drive circuit are connected with the low side drive circuit, and coordinate output electric signal to the grid of insulated gate bipolar transistor；And; protection circuit, the first end of the protection circuit are connected to the grid of the insulated gate bipolar transistor, and the second end is connected to the flash drive circuit; when the voltage of the first end of the protection circuit is higher than the voltage at the second end, the protection circuit conducting.The embodiment of the present invention; by setting protection circuit; so that in IGBT grid overvoltage; the voltage of the first end of protection circuit can be higher than the voltage at the second end; and then cause protection circuit conducting; so as to by the Voltage Feedback of IGBT grid to flash drive circuit, so as to protect IGBT not damaged in grid overvoltage.
Description
Technical field
The present invention relates to technical field of circuit design, more particularly to a kind of bipolar transistor driving circuit of insulated gate.
Background technology
Applied to the electric machine controller in electric automobile field, the direct current of high voltage power battery is converted into control traction electricity
The three-phase alternating current of machine rotation, so as to control electric automobile normally travel.Whole controller is by high input voltage filter circuit, sampling
Circuit, accessory power supply, drive circuit, inverter circuit, external signal Acquisition Circuit, control circuit composition.
Insulated gate bipolar transistor (IGBT, Insulated Gate Bipolar Transistor) in drive circuit
Gate-emitter driving voltage UGEGuarantee value be ± 20V, if between its grid and emitter stage add beyond ensure
The voltage of value, then it may damage IGBT.In addition, if IGBT grid is opened a way with transmitting interpolar, and in its colelctor electrode and launch
Voltage is added between pole, then with the change of collector potential, due to parasitic capacitance between grid and collector and emitter
In the presence of grid potential rise, collector emitter has electric current to flow through.If being at this moment in high pressure conditions between collector and emitter,
IGBT heatings may be made or even damaged.If equipment causes grid return to disconnect during transport or vibrations, without inspection
Voltage just is added to main circuit in the case of looking into, then IGBT be able to may be damaged.And when electrostatic buildup is in grid capacitance or electric
Holding Miller effect can cause IGBT grid overvoltage occur, so as to damage IGBT.
The content of the invention
Technical problems to be solved of the embodiment of the present invention are to provide a kind of bipolar transistor driving circuit of insulated gate, to
The grid overvoltage for solving the problems, such as IGBT can damage IGBT.
In order to solve the above technical problems, the embodiments of the invention provide a kind of bipolar transistor driving circuit of insulated gate,
Including：
Primary side power supply circuit；
The secondary power supply circuit being connected with the primary side power supply circuit, the secondary power supply circuit include：Flash driving electricity
Road and low side drive circuit, the flash drive circuit are connected with the low side drive circuit, and coordinate output electric signal extremely
The grid of insulated gate bipolar transistor；And
Protection circuit, the first end of the protection circuit are connected to the grid of the insulated gate bipolar transistor, and second
End is connected to the flash drive circuit, described when the voltage of the first end of the protection circuit is higher than the voltage at the second end
Protection circuit turns on.
Further, when the voltage of the first end of the protection circuit is less than or equal to the voltage at the second end, the guarantor
Protection circuit is off.
Further, the primary side power supply circuit includes：Driving chip and the first driving power；
The driving chip includes：First pin to the 9th pin；
Wherein, first pin is connected to the positive pole of first driving power, and the 4th pin is connected to described first
The negative pole of driving power and ground connection.
Further, the flash drive circuit includes：First resistor, second resistance, 3rd resistor, the oxidation of the first metal
Thing semiconductor field, the first electric capacity and the second driving power；
Wherein, the first end of the first resistor is connected with the 6th pin of the driving chip, the second end respectively with institute
The first end for stating second resistance connects with the grid of first metal oxide semiconductor field effect tube；
Grid of the first end of the second resistance also with first metal oxide semiconductor field effect tube is connected, institute
State the second end of second resistance and the drain of first metal oxide semiconductor field effect tube, the first end of the first electric capacity and
The positive pole connection of second driving power；
Second end of first electric capacity is connected to the second end of second driving power, and is grounded；
The source electrode of first metal oxide semiconductor field effect tube is connected to the 3rd resistor, and passes through described
Three resistance are connected with the grid of the insulated gate bipolar transistor.
Further, the voltage of first driving power is 5V, and the voltage of second driving power is 15V.
Further, the low side drive circuit includes：4th resistance, the 5th resistance, the 6th resistance, the 7th resistance,
Eight resistance, the second metal oxide semiconductor field effect tube, the 3rd metal oxide semiconductor field effect tube, the second electric capacity,
Three electric capacity and the 3rd driving power；
Wherein, the first end of the 4th resistance is connected with the 7th pin of the driving chip, the second end and described the
The grid connection of the first end of six resistance, second metal oxide semiconductor field effect tube；
The first end of 5th resistance is connected with the 8th pin of the driving chip, the second end and the 7th resistance
First end connected with the grid of the 3rd metal oxide semiconductor field effect tube；
The grid connection of also described second metal oxide semiconductor field effect tube of first end of 6th resistance, second
End and the second end of the 7th resistance, the positive pole of the 3rd driving power, the first end of second electric capacity and described the
The source electrode connection of three metal oxide semiconductor field effect tubes；
Grid of the first end of 7th resistance also with the 3rd metal oxide semiconductor field effect tube is connected, the
Two ends and the positive pole of the 3rd driving power, the first end of second electric capacity and the 3rd MOS field
The source electrode connection of effect pipe；
The first end of second electric capacity also with the source electrode of the 3rd metal oxide semiconductor field effect tube and described
The positive pole connection of 3rd driving power, the second end is connected with the negative pole of the 3rd driving power, and is grounded；
The drain of second metal oxide semiconductor field effect tube is connected with the first end of the 8th resistance, described
Positive pole of the source electrode of second metal oxide semiconductor field effect tube also with the 3rd driving power, the of second electric capacity
One end connects with the source electrode of the 3rd metal oxide semiconductor field effect tube；
Second end of the 8th resistance is connected to the grid of the 3rd resistor and the insulated gate bipolar transistor
The circuit of connection；
The drain of 3rd metal oxide semiconductor field effect tube is connected to the 3rd resistor and the insulated gate
The circuit of the grid connection of bipolar transistor；
The first end of 3rd electric capacity is connected with the second end of second electric capacity and the negative pole of the 3rd driving power, the
Two ends are connected to the circuit that the 3rd resistor is connected with the grid of the insulated gate bipolar transistor.
Further, the low side drive circuit also includes：9th resistance, the tenth resistance and the first diode；
Drain and the insulated gate of 9th resistant series in the 3rd metal oxide semiconductor field effect tube
On the circuit of the grid connection of bipolar transistor, and the first end of the 9th resistance is partly led with the 3rd metal oxide
The drain connection of body FET, the second end is connected with the second end of the 8th resistance；
Tenth resistance and first diode are in parallel with the 3rd electric capacity.
Further, the voltage of the 3rd driving power is -7V.
Further, the protection circuit includes：Second diode；
The positive pole of second diode is connected with the grid of the insulated gate bipolar transistor；
The negative pole of second diode and the positive pole of second driving power, the first end of first electric capacity, institute
The drain of the first metal oxide semiconductor field effect tube is stated to connect with the second end of the second resistance.
Further, the protection circuit also includes：11st resistance and the 4th electric capacity；
Wherein, the negative pole of the first end of the 11st resistance and second diode, second driving power
Positive pole, the first end of first electric capacity, the drain of first metal oxide semiconductor field effect tube and second electricity
The second end connection of resistance, the second end is connected with the first end of the 4th electric capacity；
Second end of the 4th electric capacity is connected to the grid of the 3rd resistor and the insulated gate bipolar transistor
The circuit of connection.
Compared with prior art, a kind of bipolar transistor driving circuit of insulated gate provided in an embodiment of the present invention, at least
Have the advantages that：
The embodiment of the present invention, by setting protection circuit, and the first end of protection circuit and IGBT grid connect, and second
End is connected to flash drive circuit so that in IGBT grid overvoltage, the voltage of the first end of protection circuit can be higher than second
The voltage at end, and then cause protection circuit conducting, so that by the Voltage Feedback of IGBT grid to flash drive circuit, reduce
The voltage of IGBT grid, so as to protect IGBT not damaged in grid overvoltage.
Brief description of the drawings
Fig. 1 is the circuit diagram of the bipolar transistor driving circuit of insulated gate of the embodiment of the present invention.
Embodiment
To make the technical problem to be solved in the present invention, technical scheme and advantage clearer, below in conjunction with accompanying drawing and tool
Body embodiment is described in detail.In the following description, there is provided such as specific configuration and the specific detail of component are only
In order to help comprehensive understanding embodiments of the invention.Therefore, it will be apparent to those skilled in the art that can be to reality described herein
Example is applied to make various changes and modifications without departing from scope and spirit of the present invention.In addition, for clarity and brevity, eliminate pair
The description of known function and construction.
It should be understood that " one embodiment " or " embodiment " that specification is mentioned in the whole text mean it is relevant with embodiment
During special characteristic, structure or characteristic are included at least one embodiment of the present invention.Therefore, occur everywhere in entire disclosure
" in one embodiment " or " in one embodiment " identical embodiment is not necessarily referred to.In addition, these specific feature, knots
Structure or characteristic can combine in one or more embodiments in any suitable manner.
Referring to Fig. 1, the embodiments of the invention provide a kind of bipolar transistor driving circuit of insulated gate, including：
Primary side power supply circuit；
The secondary power supply circuit being connected with the primary side power supply circuit, the secondary power supply circuit include：Flash driving electricity
Road and low side drive circuit, the flash drive circuit are connected with the low side drive circuit, and coordinate output electric signal extremely
The grid of insulated gate bipolar transistor；And
Protection circuit, the first end of the protection circuit are connected to the grid of the insulated gate bipolar transistor, and second
End is connected to the flash drive circuit, described when the voltage of the first end of the protection circuit is higher than the voltage at the second end
Protection circuit turns on.
The embodiment of the present invention, by setting protection circuit, and the first end of protection circuit and IGBT grid connect, and second
End is connected to flash drive circuit so that in IGBT grid overvoltage, the voltage of the first end of protection circuit can be higher than second
The voltage at end, and then cause protection circuit conducting, so that by the Voltage Feedback of IGBT grid to flash drive circuit, reduce
The voltage of IGBT grid, so as to protect IGBT not damaged in grid overvoltage.
Wherein, when the voltage of the first end of the protection circuit is less than or equal to the voltage at the second end, the protection electricity
Road is off.
Wherein the voltage of the grid of insulated gate bipolar transistor is provided by flash drive circuit, so work as insulated gate bipolar
During the grid overvoltage of transistor npn npn, i.e., the voltage of the grid of insulated gate bipolar transistor is more than power supply institute in flash drive circuit
During the voltage of offer, the grid voltage of insulated gate bipolar transistor can be by being connected to the grid of insulated gate bipolar transistor
Protection circuit between flash drive circuit feeds back to flash drive circuit, and then protects insulated gate bipolar transistor.And
When the voltage of the first end of protection circuit is less than or equal to the voltage at the second end, i.e. the grid of insulated gate bipolar transistor
When voltage is not over-pressed, protection circuit is off, and does not influence the normal work of insulated gate bipolar transistor.
With continued reference to Fig. 1, in one embodiment, the primary side power supply circuit can include：The drivings of driving chip U and first
Power supply；
The driving chip U includes：First pin to the 9th pin；
Wherein, first pin is connected to the positive pole of first driving power, and the 4th pin is connected to described first
The negative pole of driving power and ground connection.
Wherein, with reference to accompanying drawing 1, driving chip U the first pin is the VCC1 pins of diagram, and second pin is diagram
PWM pins, the 3rd pin are the FAULT pins of diagram, and the 4th pin is the VGND pins of diagram, and the 5th pin is diagram
VCC2 pins, the 6th pin are the VOUTP pins of diagram, and the 7th pin is the VOUTN pins of diagram, and the 8th pin is diagram
VGMOS pins, the 9th pin are the VEE pins of diagram.It is understood that the connection of said chip and pin is only the present invention
The preferred embodiment provided, the present invention is not limited thereto.
Wherein, the flash drive circuit can include：First resistor R1, second resistance R2,3rd resistor R3, the first gold medal
Belong to oxide semiconductor field effect pipe Q1, the first electric capacity C1 and the second driving power；
Wherein, the first end of the first resistor R1 is connected with the 6th pin of the driving chip U, the second end respectively with
The first end of the second resistance R2 connects with the grid of the first metal oxide semiconductor field effect tube Q1；
The first end of the second resistance R2 also connects with the grid of the first metal oxide semiconductor field effect tube Q1
Connect, the second end of the second resistance R2 and the first metal oxide semiconductor field effect tube Q1 drain, the first electric capacity
C1 first end connects with the positive pole of the second driving power；
The second end of the first electric capacity C1 is connected to the second end of second driving power, and is grounded；
The source electrode of the first metal oxide semiconductor field effect tube Q1 is connected to the 3rd resistor R3, and passes through institute
The grid that 3rd resistor R3 is stated with the insulated gate bipolar transistor is connected.
Wherein, first resistor R1 be the first metal oxide semiconductor field effect tube Q1 driving resistance, second resistance R2
For pull-up resistor, 3rd resistor R3 is the driving resistance of the grid of insulated gate bipolar transistor, and the first electric capacity C1 is used for for the
Two driving powers filter.
Wherein, in one embodiment, the voltage of first driving power is preferably 5V, the electricity of second driving power
Pressure is preferably 15V.
Wherein, the low side drive circuit can include：4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th electricity
Hinder R7, the 8th resistance R8, the second metal oxide semiconductor field effect tube Q2, the 3rd metal oxide semiconductor field effect tube
Q3, the second electric capacity C2, the 3rd electric capacity C3 and the 3rd driving power；
Wherein, the first end of the 4th resistance R4 is connected with the 7th pin of the driving chip U, the second end with it is described
The grid connection of 6th resistance R6 first end, the second metal oxide semiconductor field effect tube Q2；
The first end of the 5th resistance R5 is connected with the 8th pin of the driving chip U, the second end and the described 7th
Resistance R7 first end connects with the grid of the 3rd metal oxide semiconductor field effect tube Q3；
The also described second metal oxide semiconductor field effect tube Q2 of the first end of 6th resistance R6 grid connection,
Second end and the second end of the 7th resistance R7, the positive pole of the 3rd driving power, the first end of the second electric capacity C2
Connected with the source electrode of the 3rd metal oxide semiconductor field effect tube Q3；
The first end of the 7th resistance R7 also connects with the grid of the 3rd metal oxide semiconductor field effect tube Q3
Connect, the second end and the positive pole of the 3rd driving power, the first end of the second electric capacity C2 and the 3rd metal oxide
Semiconductor field Q3 source electrode connection；
The first end of the second electric capacity C2 also with the source electrode of the 3rd metal oxide semiconductor field effect tube Q3 and
The positive pole connection of 3rd driving power, the second end is connected with the negative pole of the 3rd driving power, and is grounded；
The drain of the second metal oxide semiconductor field effect tube Q2 is connected with the first end of the 8th resistance R8,
Positive pole, second electricity of the source electrode of the second metal oxide semiconductor field effect tube Q2 also with the 3rd driving power
The first end for holding C2 connects with the source electrode of the 3rd metal oxide semiconductor field effect tube Q3；
The second end of the 8th resistance R8 is connected to the 3rd resistor R3 and the insulated gate bipolar transistor
The circuit of grid connection；
The drain of the 3rd metal oxide semiconductor field effect tube Q3 be connected to the 3rd resistor R3 with it is described absolutely
The circuit of the grid connection of edge grid bipolar transistor；
3rd electric capacity C3 first end connects with the second end of the second electric capacity C2 and the negative pole of the 3rd driving power
Connect, the second end is connected to the circuit that the 3rd resistor R3 is connected with the grid of the insulated gate bipolar transistor.
Wherein, the 4th resistance R4 be the second metal oxide semiconductor field effect tube Q2 driving resistance, the 5th resistance R5
For the 3rd metal oxide semiconductor field effect tube Q3 driving resistance, the 6th resistance R6 and the 7th resistance R7 are drop-down electricity
Resistance, the 8th resistance R8 are the driving resistance of the grid of insulated gate bipolar transistor, and the second electric capacity C2 is used for for the second driving electricity
Source filters, and the 3rd electric capacity C3 is the driving electric capacity of the grid of insulated gate bipolar transistor.
Wherein, the low side drive circuit can also include：9th resistance R9, the tenth resistance R10 and the first diode D1；
The 9th resistance R9 be connected on the drain of the 3rd metal oxide semiconductor field effect tube Q3 with it is described absolutely
On the circuit of the grid connection of edge grid bipolar transistor, and the first end of the 9th resistance R9 aoxidizes with the 3rd metal
Thing semiconductor field Q3 drain connection, the second end is connected with the second end of the 8th resistance R8；
The tenth resistance R10 and the first diode D1 are in parallel with the 3rd electric capacity C3.
Wherein, the 9th resistance R9 is current-limiting resistance, can adjust the gate discharge speed of insulated gate bipolar transistor, the
Ten resistance R10 are the protective resistance of the grid of insulated gate bipolar transistor.Tenth resistance R10 and the first diode D1 coordinates can
Gate-emitter overvoltage as protection device, to prevent insulated gate bipolar transistor IGBT to a certain extent.
Wherein, the first diode D1 is preferably Transient Suppression Diode (TVS, Transient Voltage
Suppressor)。
Wherein, the voltage of the 3rd driving power is preferably -7V.
Wherein, although the tenth resistance R10 and the first diode D1 can be prevented to a certain extent as protection device
IGBT gate-emitter overvoltage, but because resistance and TVS response speed limit, for the overvoltage under bad working environments not
It can accomplish to timely respond to, IGBT still has damage risk.
So being provided with protection circuit in this explanation embodiment, the protection circuit can include：Second diode
D2；
The positive pole of the second diode D2 is connected with the grid of the insulated gate bipolar transistor；
The negative pole of the second diode D2 and the positive pole of second driving power, the first of the first electric capacity C1
End, the drain of the first metal oxide semiconductor field effect tube Q1 connect with the second end of the second resistance R2.
By the way that inverse parallel the second diode D2 is at the second driving power at IGBT grid, when over-pressed feelings occurs in grid
Condition, what extra energy can be quickly feeds back to the second driving power by the second diode D2, reduces the electricity of IGBT grid
Pressure, so as to protect IGBT not damaged in grid overvoltage.
Further, the protection circuit can also include：11st resistance R11 and the 4th electric capacity C4；
Wherein, negative pole, the second driving electricity of the first end of the 11st resistance R11 with the second diode D2
The positive pole in source, the first end of the first electric capacity C1, the drain of the first metal oxide semiconductor field effect tube Q1 and institute
Second resistance R2 the second end connection is stated, the second end is connected with the first end of the 4th electric capacity C4；
The second end of the 4th electric capacity C4 is connected to the 3rd resistor R3 and the insulated gate bipolar transistor
The circuit of grid connection.
Inverse parallel the second diode D2 is at the second driving power at IGBT grid, when there is overpressure situation in grid,
Extra energy can be quickly the second driving power is fed back to by the second diode D2, and by the 11st resistance R11 and
4th electric capacity C4 does RC absorptions, can effectively clamp down on grid voltage, and it is drive circuitry to feed back energy to driving power.
As illustrated, when IGBT grids severe overvoltage are occurred by effect of parasitic capacitance, grid voltage can be higher than second
The voltage of driving power, the second diode D2 meeting forward conductions, D2 response speed is in ns (nanosecond) rank, and D1 response is fast
Spend in us (microsecond) rank, the tenth resistance R10 infiltration rate is in ms (millisecond) rank, it can be seen that the big portion of energy after overvoltage
Branch is fed back at the second driving power by the second diode D2, and protection circuit can accomplish quickly to protect.
By improve electric vehicle controller design in IGBT drive gate protection circuit, substantially reduce due to
The probability that the situation that IGBT gate-emitter overvoltage causes IGBT to damage occurs, eliminates traffic safety hidden danger, protects
Full Vehicle System safety, and faster response overpressure problems can be accomplished and protected, while can be effectively using caused by overvoltage
Energy, improve power utilization efficiency.
To sum up, the embodiment of the present invention, by setting protection circuit, and the first end of protection circuit and IGBT grid connect
Connect, the second end is connected to flash drive circuit so that in IGBT grid overvoltage, the voltage of the first end of protection circuit can be high
Voltage in the second end, and then cause protection circuit conducting, so as to by the Voltage Feedback of IGBT grid to flash drive circuit,
The voltage of IGBT grid is reduced, so as to protect IGBT not damaged in grid overvoltage.
It should also be noted that, herein, such as first and second or the like relational terms are used merely to one
Entity or operation make a distinction with another entity or operation, and not necessarily require or imply between these entities or operation
Any this actual relation or order be present.Moreover, term " comprising ", "comprising" or its any other variant are intended to contain
Lid nonexcludability includes.
Described above is the preferred embodiment of the present invention, it is noted that for those skilled in the art
For, on the premise of principle of the present invention is not departed from, some improvements and modifications can also be made, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
- A kind of 1. bipolar transistor driving circuit of insulated gate, it is characterised in that including：Primary side power supply circuit；The secondary power supply circuit being connected with the primary side power supply circuit, the secondary power supply circuit include：Flash drive circuit and Low side drive circuit, the flash drive circuit are connected with the low side drive circuit, and coordinate output electric signal to insulation The grid of grid bipolar transistor；AndProtection circuit, the first end of the protection circuit are connected to the grid of the insulated gate bipolar transistor, and the second end connects The flash drive circuit is connected to, when the voltage of the first end of the protection circuit is higher than the voltage at the second end, the protection Circuit turn-on.
- 2. bipolar transistor driving circuit of insulated gate according to claim 1, it is characterised in that when the protection circuit First end voltage be less than or equal to the second end voltage when, the protection circuit is off.
- 3. bipolar transistor driving circuit of insulated gate according to claim 1, it is characterised in that the primary side power supply electricity Road includes：Driving chip and the first driving power；The driving chip includes：First pin to the 9th pin；Wherein, first pin is connected to the positive pole of first driving power, and the 4th pin is connected to first driving The negative pole of power supply and ground connection.
- 4. bipolar transistor driving circuit of insulated gate according to claim 3, it is characterised in that the flash driving electricity Road includes：First resistor, second resistance, 3rd resistor, the first metal oxide semiconductor field effect tube, the first electric capacity and second Driving power；Wherein, the first end of the first resistor is connected with the 6th pin of the driving chip, and the second end is respectively with described The first end of two resistance connects with the grid of first metal oxide semiconductor field effect tube；Grid of the first end of the second resistance also with first metal oxide semiconductor field effect tube is connected, and described Second end of two resistance and drain, the first end and second of the first electric capacity of first metal oxide semiconductor field effect tube The positive pole connection of driving power；Second end of first electric capacity is connected to the second end of second driving power, and is grounded；The source electrode of first metal oxide semiconductor field effect tube is connected to the 3rd resistor, and passes through the described 3rd electricity Resistance is connected with the grid of the insulated gate bipolar transistor.
- 5. bipolar transistor driving circuit of insulated gate according to claim 4, it is characterised in that the first driving electricity The voltage in source is 5V, and the voltage of second driving power is 15V.
- 6. bipolar transistor driving circuit of insulated gate according to claim 4, it is characterised in that the low side driving electricity Road includes：4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the second metal oxide semiconductcor field effect Ying Guan, the 3rd metal oxide semiconductor field effect tube, the second electric capacity, the 3rd electric capacity and the 3rd driving power；Wherein, the first end of the 4th resistance is connected with the 7th pin of the driving chip, the second end and the described 6th electricity The grid connection of the first end of resistance, second metal oxide semiconductor field effect tube；The first end of 5th resistance is connected with the 8th pin of the driving chip, and the of the second end and the 7th resistance One end connects with the grid of the 3rd metal oxide semiconductor field effect tube；Also described second metal oxide semiconductor field effect tube of first end of 6th resistance grid connection, the second end with The second end, the positive pole of the 3rd driving power, the first end of second electric capacity and the 3rd gold medal of 7th resistance Belong to the source electrode connection of oxide semiconductor field effect pipe；Grid of the first end of 7th resistance also with the 3rd metal oxide semiconductor field effect tube is connected, the second end The first end of positive pole, second electric capacity with the 3rd driving power and the 3rd metal oxide semiconductor field-effect The source electrode connection of pipe；Source electrode and described threeth of the first end of second electric capacity also with the 3rd metal oxide semiconductor field effect tube The positive pole connection of driving power, the second end is connected with the negative pole of the 3rd driving power, and is grounded；The drain of second metal oxide semiconductor field effect tube is connected with the first end of the 8th resistance, and described second Positive pole of the source electrode of metal oxide semiconductor field effect tube also with the 3rd driving power, the first end of second electric capacity Connected with the source electrode of the 3rd metal oxide semiconductor field effect tube；Second end of the 8th resistance is connected to the 3rd resistor and is connected with the grid of the insulated gate bipolar transistor Circuit；The drain of 3rd metal oxide semiconductor field effect tube is connected to the 3rd resistor and the insulated gate bipolar The circuit of the grid connection of transistor npn npn；The first end of 3rd electric capacity is connected with the second end of second electric capacity and the negative pole of the 3rd driving power, the second end It is connected to the circuit that the 3rd resistor is connected with the grid of the insulated gate bipolar transistor.
- 7. bipolar transistor driving circuit of insulated gate according to claim 6, it is characterised in that the low side driving electricity Road also includes：9th resistance, the tenth resistance and the first diode；Drain and the insulated gate bipolar of 9th resistant series in the 3rd metal oxide semiconductor field effect tube On the circuit of the grid connection of transistor npn npn, and the first end of the 9th resistance and the 3rd MOS field The drain connection of effect pipe, the second end is connected with the second end of the 8th resistance；Tenth resistance and first diode are in parallel with the 3rd electric capacity.
- 8. bipolar transistor driving circuit of insulated gate according to claim 6, it is characterised in that the 3rd driving electricity The voltage in source is -7V.
- 9. bipolar transistor driving circuit of insulated gate according to claim 4, it is characterised in that the protection circuit bag Include：Second diode；The positive pole of second diode is connected with the grid of the insulated gate bipolar transistor；The positive pole of the negative pole of second diode and second driving power, the first end of first electric capacity, described the The drain of one metal oxide semiconductor field effect tube connects with the second end of the second resistance.
- 10. bipolar transistor driving circuit of insulated gate according to claim 9, it is characterised in that the protection circuit Also include：11st resistance and the 4th electric capacity；Wherein, the negative pole of the first end of the 11st resistance and second diode, second driving power positive pole, The of the first end of first electric capacity, the drain of first metal oxide semiconductor field effect tube and the second resistance Two ends are connected, and the second end is connected with the first end of the 4th electric capacity；Second end of the 4th electric capacity is connected to the 3rd resistor and is connected with the grid of the insulated gate bipolar transistor Circuit.
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| CN201710897376.0A CN107707242B (en) | 2017-09-28 | 2017-09-28 | Insulated gate bipolar transistor driving circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418572A (en) * | 2018-05-07 | 2018-08-17 | 雅安小航电器有限责任公司 | One kind having short-circuit protection function modified driving circuit |
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| CN102801142A (en) * | 2012-08-29 | 2012-11-28 | 深圳市英威腾电气股份有限公司 | Insulated gate bipolar transistor-driven protective circuit |
| CN104065253A (en) * | 2014-06-25 | 2014-09-24 | 台达电子企业管理（上海）有限公司 | Power conversion device, driving device and driving method thereof |
| JP2014226959A (en) * | 2013-05-20 | 2014-12-08 | 株式会社オートネットワーク技術研究所 | Power supply control device for vehicle |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102801142A (en) * | 2012-08-29 | 2012-11-28 | 深圳市英威腾电气股份有限公司 | Insulated gate bipolar transistor-driven protective circuit |
| JP2014226959A (en) * | 2013-05-20 | 2014-12-08 | 株式会社オートネットワーク技術研究所 | Power supply control device for vehicle |
| CN104065253A (en) * | 2014-06-25 | 2014-09-24 | 台达电子企业管理（上海）有限公司 | Power conversion device, driving device and driving method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108418572A (en) * | 2018-05-07 | 2018-08-17 | 雅安小航电器有限责任公司 | One kind having short-circuit protection function modified driving circuit |
| CN108418572B (en) * | 2018-05-07 | 2023-11-07 | 雅安小航电器股份有限公司 | Improved driving circuit with short-circuit protection function |
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| CN107707242B (en) | 2021-09-14 |
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