CN107706290A - A kind of UV LED and substrate etching method for flip-chip - Google Patents
A kind of UV LED and substrate etching method for flip-chip Download PDFInfo
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- CN107706290A CN107706290A CN201710934804.2A CN201710934804A CN107706290A CN 107706290 A CN107706290 A CN 107706290A CN 201710934804 A CN201710934804 A CN 201710934804A CN 107706290 A CN107706290 A CN 107706290A
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- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000005530 etching Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 17
- 241001270131 Agaricus moelleri Species 0.000 claims abstract description 11
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 7
- 230000000873 masking effect Effects 0.000 claims description 21
- 229910015844 BCl3 Inorganic materials 0.000 claims description 7
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 241001062009 Indigofera Species 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 abstract description 6
- 239000010980 sapphire Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910018516 Al—O Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of UV LED and substrate etching method for flip-chip, UV LED includes P-type electrode and N-type electrode, and substrate, cushion, n type semiconductor layer, luminous zone, p type semiconductor layer and the contact layer sequentially formed, the substrate is Sapphire Substrate and is used as exiting surface, wherein, substrate face and buffer layer contacts, and substrate back is etched with multiple condensing bodies.Condensing body is cone, hemisphere or the semiellipsoid of flat-top.In this way, the optically focused particle by etching flat-top in itself in sapphire, lens mode compared with prior art so that light being capable of uniform transillumination.
Description
Technical field
The invention belongs to deep ultraviolet LED manufacturing fields, and in particular to a kind of UV LED for flip-chip.
Background technology
For ultraviolet-sterilization, compared with traditional mercury lamp, deep ultraviolet LED has lot of advantages, and it can direct handle
Electricity is converted into light, and it is pollution-free, brightness is high, low in energy consumption, long lifespan, operating voltage are low and easy miniaturization.Due to light-emitting diodes
Pipe is solid light source, and refractive index is higher, easily produces total internal reflection, and light emission rate thus will be caused low, therefore, how to be improved
LED light extraction efficiency, it is always the focus of the area research.Currently used means are：Substrate surface is roughened, although can subtract
Few total internal reflection rate, but light emission rate is not still high；It is more for the chip being molded, such as the mode of chip front side light extraction
Number is high in the additional lens of substrate face, but which complex process, cost.
In view of the foregoing, the present invention provides a kind of UV LED and substrate etching side for flip-chip
Method, to solve the problems of the prior art.
The content of the invention
The present invention provides a kind of UV LED for flip-chip, including P-type electrode and N-type electrode, and
Substrate, cushion, n type semiconductor layer, luminous zone, p type semiconductor layer and the contact layer sequentially formed, the substrate is as light extraction
Face, wherein, substrate face and buffer layer contacts, and substrate back is etched with condensing body multiple equal in magnitude and regularly arranged.
Further, the condensing body is cone, hemisphere or the semiellipsoid of flat-top.
Further, the substrate back smooth surface before etching, and have one layer of masking layer.
Further, sheltering layer material includes photoresist, SiO2, SiN or Ni.
Further, the multiple condensing body is arranged in array.
Further, the size of the condensing body is micron order or nanoscale.
Further, the substrate is Sapphire Substrate.
The present invention also provides a kind of substrate etching method of UV LED, comprises the following steps：
S1, according to predetermined dimension of picture, etched from top to bottom on masking layer and substrate it is multiple it is equal-sized just
Beginning condensing body, the initial condensing body is cone, hemisphere or semiellipsoid；
S2, the masking layer after etching and substrate inserted in developer solution, the developing solution dissolution masking layer；
After S3, masking layer remove completely, expose the condensing body of substrate back flat-top, clean and dry the substrate.
Further, the initial condensing body, obtained using the inductively reaction particle etching mode of dry etching.
Further, the etching mode using two kinds or two kinds of gas including BCl3, HBr, HCl, SF6 and Cl2 with
Upper mixed gas.
The invention has the advantages that and beneficial effect：
Provided by the present invention for the UV LED of flip-chip, including P-type electrode and N-type electrode, Yi Jiyi
Substrate, cushion, n type semiconductor layer, luminous zone, p type semiconductor layer and the contact layer of secondary formation, the substrate serve as a contrast for sapphire
Bottom is simultaneously used as exiting surface, wherein, substrate face and buffer layer contacts, and substrate back is etched with multiple condensing bodies.Condensing body is
Cone, hemisphere or the semiellipsoid of flat-top.In this way, the optically focused particle by etching flat-top in itself in sapphire, compared to existing
There is the lens mode of technology so that light being capable of uniform transillumination.
After the detailed description of the application embodiment is read in conjunction with the figure, other features and advantage of the application will become more
Add clear.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are this hairs
Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is that the UV LED overall structure for flip-chip that present pre-ferred embodiments provide is illustrated
Figure；
Fig. 2 is that the UV LED substrate back for flip-chip that present pre-ferred embodiments provide is overlooked
Figure；
Fig. 3 is the UV LED substrate etching method stream for flip-chip that present pre-ferred embodiments provide
Cheng Tu；
Fig. 4 a are the schematic diagram with masking layer substrate that present pre-ferred embodiments provide；
Fig. 4 b be present pre-ferred embodiments provide by masking layer and the schematic diagram of substrate etching aftershaping；
The condensing body schematic diagram formed after the removal masking layer that Fig. 4 c provide for present pre-ferred embodiments.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Below in conjunction with drawings and examples, the invention will be further described.
Fig. 1 is that the UV LED overall structure for flip-chip that present pre-ferred embodiments provide is illustrated
Figure.As shown in figure 1, the UV LED for flip-chip that present pre-ferred embodiments provide includes N-type electrode 100
Partly led with P-type electrode 200, and the substrate 300 that sequentially forms, cushion 400, n type semiconductor layer 500, luminous zone 600, p-type
Body layer 700 and contact layer 800, substrate 300 are used as exiting surface, wherein, the front of substrate 300 contacts with cushion 400, and substrate
300 back-etchings have multiple condensing bodies 301.In this, to ensure optimal light transmittance and substrate hardness, the material that substrate 300 uses
For sapphire.
Fig. 2 is that the UV LED substrate back for flip-chip that present pre-ferred embodiments provide is overlooked
Figure.As shown in Fig. 2 condensing body 301 is cone, hemisphere or the semiellipsoid of the flat-top formed on substrate.In the present embodiment,
To keep the uniformity of light guide, multiple condensing bodies are equal in magnitude and arranged in array.Specifically, adjacent four condensing bodies
Line of centres composition square, and the ratio range of the square length of side and condensing body basal diameter is between 1.5-6.Further
, the size of condensing body is micron order or nanoscale, such as a diameter of tens microns of condensing body or hundreds of nanometers, specifically can root
According to setting is actually needed, however, to this and being not construed as limiting to invention.
Fig. 3 is the UV LED substrate etching method stream for flip-chip that present pre-ferred embodiments provide
Cheng Tu.As shown in figure 3, the UV LED substrate etching method for flip-chip that present pre-ferred embodiments provide
Comprise the following steps：
Step S1, according to predetermined dimension of picture, etched from top to bottom on masking layer and substrate multiple equal in magnitude
Initial condensing body, initial condensing body is cone, hemisphere or semiellipsoid.
Specifically, incorporated by reference to Fig. 4 a and Fig. 4 b, the backside surface of substrate 300 is smooth, and with one layer of masking layer 900 (figure
4a).In this step, masking layer 900 and substrate 300 are etched into initial condensing body, i.e. cone, hemisphere or the semielliptical bodily form
Shape (Fig. 4 b), in this, masking layer material includes photoresist, SiO2, SiN or Ni.
In the present embodiment, initial condensing body is that condensing body 301 is integrally formed with substrate 300, and using the sense of dry etching
Answer coupled reaction particle etching mode to obtain, in other embodiment, can also use other dry etchings, but to this present invention
And it is not construed as limiting.
With reference to Fig. 2, what deserves to be explained is, it is multiple in the etching process of initial condensing body to reach the effect of uniform in light emission
Plane 302 between condensing body 301 keeps smooth.
Step S2, the masking layer after etching and substrate are inserted in developer solution, developing solution dissolution masking layer.
Specifically, high energy Al-O is interrupted as a result of inductively reaction particle etching mode, Ions Bombardment, simultaneously
By adsorbed product desorption so that etching process is uninterrupted, middle also such as spray process to be used to carry out dedusting.
Step S3, after masking layer removes completely, expose the condensing body of substrate back flat-top, clean and dry substrate.
Specifically, in the present embodiment, gas that foregoing inductively reaction particle etching uses include BCl3, HBr,
HCl, SF6 and Cl2 two or more mixed gas, for example, BCl3 and HBr, BCl3 and HCl, BCl3 and SF6 or
BCl3 and Cl2 mixed gas etc..
This method formed flat-top condensing body, compared with prior art in lens light gathering mode, enable to light to pass through
More uniformly launch after condensing body convergence.
Finally it should be noted that：The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those within the art that：It still may be used
To be modified to the technical scheme described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical scheme spirit and
Scope.
Claims (10)
1. for the UV LED of flip-chip, including P-type electrode and N-type electrode, and the substrate, slow sequentially formed
Rush layer, n type semiconductor layer, luminous zone, p type semiconductor layer and contact layer, it is characterised in that the substrate as exiting surface, its
In, substrate face and buffer layer contacts, and substrate back is etched with condensing body multiple equal in magnitude and regularly arranged.
2. the UV LED according to claim 1 for flip-chip, it is characterised in that the condensing body is
Cone, hemisphere or the semiellipsoid of flat-top.
3. the UV LED according to claim 1 for flip-chip, it is characterised in that the lining before etching
Bottom back side smooth surface, and have one layer of masking layer.
4. the UV LED according to claim 3 for flip-chip, it is characterised in that masking layer material bag
Include photoresist, SiO2, SiN or Ni.
5. the UV LED according to claim 1 for flip-chip, it is characterised in that the multiple optically focused
Body is arranged in array.
6. the UV LED according to claim 1 for flip-chip, it is characterised in that the condensing body
Size is micron order or nanoscale.
7. the UV LED according to claim 1 for flip-chip, it is characterised in that the substrate is indigo plant
Jewel substrate.
8. a kind of substrate etching method of the UV LED for flip-chip described in any one of claim 1 to 7,
It is characterised in that it includes following steps：
S1, according to predetermined dimension of picture, etched from top to bottom on masking layer and substrate multiple equal-sized initial poly-
Body of light, the initial condensing body is cone, hemisphere or semiellipsoid；
S2, the masking layer after etching and substrate inserted in developer solution, the developing solution dissolution masking layer；
After S3, masking layer remove completely, expose the condensing body of substrate back flat-top, clean and dry the substrate.
9. according to the method for claim 8, it is characterised in that the initial condensing body, be to use dry method in step sl
The inductively reaction particle etching mode of etching obtains.
10. according to the method for claim 9, it is characterised in that the etching mode using gas include BCl3, HBr,
HCl, SF6 and Cl2 two or more mixed gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710934804.2A CN107706290A (en) | 2017-10-10 | 2017-10-10 | A kind of UV LED and substrate etching method for flip-chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710934804.2A CN107706290A (en) | 2017-10-10 | 2017-10-10 | A kind of UV LED and substrate etching method for flip-chip |
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| Publication Number | Publication Date |
|---|---|
| CN107706290A true CN107706290A (en) | 2018-02-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710934804.2A Pending CN107706290A (en) | 2017-10-10 | 2017-10-10 | A kind of UV LED and substrate etching method for flip-chip |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009344A (en) * | 2006-01-27 | 2007-08-01 | 杭州士兰明芯科技有限公司 | Coarse sapphire bushing LED and its making method |
| CN101043059A (en) * | 2006-03-24 | 2007-09-26 | 中国科学院半导体研究所 | Upside-down mounting structural Luminous diode manufacturing method with substrate surface roughening technology |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN102130285A (en) * | 2010-11-03 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light emitting diode and manufacturing method thereof |
| CN103117347A (en) * | 2011-11-16 | 2013-05-22 | Lg伊诺特有限公司 | Light emitting diode and light emitting apparatus having the same |
| CN205621763U (en) * | 2015-03-17 | 2016-10-05 | 传感器电子技术股份有限公司 | Semiconductor device |
-
2017
- 2017-10-10 CN CN201710934804.2A patent/CN107706290A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101009344A (en) * | 2006-01-27 | 2007-08-01 | 杭州士兰明芯科技有限公司 | Coarse sapphire bushing LED and its making method |
| CN101043059A (en) * | 2006-03-24 | 2007-09-26 | 中国科学院半导体研究所 | Upside-down mounting structural Luminous diode manufacturing method with substrate surface roughening technology |
| CN102130285A (en) * | 2010-11-03 | 2011-07-20 | 映瑞光电科技(上海)有限公司 | Light emitting diode and manufacturing method thereof |
| CN102044608A (en) * | 2010-11-17 | 2011-05-04 | 重庆大学 | Flip-chip LED chip structure and manufacturing method thereof |
| CN103117347A (en) * | 2011-11-16 | 2013-05-22 | Lg伊诺特有限公司 | Light emitting diode and light emitting apparatus having the same |
| CN205621763U (en) * | 2015-03-17 | 2016-10-05 | 传感器电子技术股份有限公司 | Semiconductor device |
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