CN107699925B - 铼的熔盐电铸制备方法 - Google Patents
铼的熔盐电铸制备方法 Download PDFInfo
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- CN107699925B CN107699925B CN201611116848.6A CN201611116848A CN107699925B CN 107699925 B CN107699925 B CN 107699925B CN 201611116848 A CN201611116848 A CN 201611116848A CN 107699925 B CN107699925 B CN 107699925B
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- CN
- China
- Prior art keywords
- fused salt
- rhenium
- electroforming
- anode
- chlorination
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Electrolytic Production Of Metals (AREA)
Abstract
Description
Claims (10)
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CN201611116848.6A CN107699925B (zh) | 2016-12-07 | 2016-12-07 | 铼的熔盐电铸制备方法 |
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CN201611116848.6A CN107699925B (zh) | 2016-12-07 | 2016-12-07 | 铼的熔盐电铸制备方法 |
Publications (2)
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CN107699925A CN107699925A (zh) | 2018-02-16 |
CN107699925B true CN107699925B (zh) | 2019-05-17 |
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CN201611116848.6A Active CN107699925B (zh) | 2016-12-07 | 2016-12-07 | 铼的熔盐电铸制备方法 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113279030B (zh) * | 2021-05-24 | 2022-07-19 | 中国人民解放军国防科技大学 | 一种铌涂层的熔盐电沉积方法 |
CN113881975A (zh) * | 2021-10-19 | 2022-01-04 | 杭州嘉悦智能设备有限公司 | 熔盐氯化电解炉及其控制方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123781A (ja) * | 1982-12-28 | 1984-07-17 | Toshiba Corp | 微細金属メツシユの製造方法 |
CN103805995A (zh) * | 2014-01-24 | 2014-05-21 | 中国人民解放军国防科学技术大学 | 碳/碳复合材料抗氧化用铼/铱涂层表面缺陷的修复方法 |
CN103806044A (zh) * | 2014-01-24 | 2014-05-21 | 中国人民解放军国防科学技术大学 | 氯铱酸铯-氯化物熔盐体系中电解制备铱涂层的方法 |
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2016
- 2016-12-07 CN CN201611116848.6A patent/CN107699925B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59123781A (ja) * | 1982-12-28 | 1984-07-17 | Toshiba Corp | 微細金属メツシユの製造方法 |
CN103805995A (zh) * | 2014-01-24 | 2014-05-21 | 中国人民解放军国防科学技术大学 | 碳/碳复合材料抗氧化用铼/铱涂层表面缺陷的修复方法 |
CN103806044A (zh) * | 2014-01-24 | 2014-05-21 | 中国人民解放军国防科学技术大学 | 氯铱酸铯-氯化物熔盐体系中电解制备铱涂层的方法 |
Non-Patent Citations (2)
Title |
---|
Epitaxial growth of rhenium on intrinsic and foreign substrates;N. O. Esina et al;《Russian Journal of Electrochemistry》;20080702;第44卷(第6期);第683-689页 |
PROPERTIES AND ENHANCED CAPABILITIES FOR EL-FORM RHENIUM;R. D. Lanam et al;《37th AIAA/ASME/SAE/ASEE Joint Propulsion Conference》;20010711;第1-9页 |
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CN107699925A (zh) | 2018-02-16 |
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Address after: No.109, Deya Road, Kaifu District, Changsha, Hunan 410000 Patentee after: National University of Defense Technology Address before: 410073 School of Aerospace Science and engineering, PLA University of Defense Science and technology, No. 47, yanwachi Zhengjie, Kaifu District, Changsha City, Hunan Province Patentee before: NATIONAL University OF DEFENSE TECHNOLOGY |
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EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20180216 Assignee: Hunan Industrial Technology Cooperative Innovation Research Institute Assignor: National University of Defense Technology Contract record no.: X2021980014798 Denomination of invention: Preparation of Rhenium by molten salt electroforming Granted publication date: 20190517 License type: Common License Record date: 20211220 |
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