CN107686702A - A kind of chemical mechanical polishing liquid for barrier layer planarization - Google Patents
A kind of chemical mechanical polishing liquid for barrier layer planarization Download PDFInfo
- Publication number
- CN107686702A CN107686702A CN201610633749.9A CN201610633749A CN107686702A CN 107686702 A CN107686702 A CN 107686702A CN 201610633749 A CN201610633749 A CN 201610633749A CN 107686702 A CN107686702 A CN 107686702A
- Authority
- CN
- China
- Prior art keywords
- chemical mechanical
- mechanical polishing
- polishing liquid
- acid
- abrasive grains
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention relates to a kind of chemical mechanical polishing liquid for barrier layer planarization, comprising abrasive grains, azole compounds, organic/inorganic acid, oxidant and water, also comprising silicon-containing organic compound and daiamid dissaving polymer PAMAM.Polishing fluid provided by the invention realizes to be polished under environment in acidity, during barrier polishing, it can meet to require the polishing speed and selection ratio of various materials, there is very strong correction ability to the defects of semiconductor device surface, planarization can quickly be realized, operating efficiency is improved, reduces production cost.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid field, more particularly to a kind of chemical machine for barrier layer planarization
Tool polishing fluid.
Background technology
With the continuous development of semiconductor technology, the device dimensions shrink of integrated circuit, wiring number of plies increase, metallic copper quilt
The material of interconnection line is widely used as, copper is there is relatively low resistivity than the advantage of aluminium, and has high resistant to electromigration
It is anti-.But in order to prevent copper to be dissolved in dielectric material, so need to cover one layer of diffusion impervious layer between copper and dielectric material, it is conventional
Barrier material include tantalum, tantalum nitride, titanium, titanium nitride etc..
The wiring number of plies of the integrated circuit of current semiconductor manufacturer manufacture is more, to the flat of each layer of integrated circuit
Change technology becomes particularly critical, wherein, by IBM Corporation in pioneering chemically mechanical polishing (CMP) technology twentieth century eighties
It is considered as the most efficient method of current global planarizartion.Chemically mechanical polishing (CMP) is a kind of by chemical action, machinery work
With and both effects be combined and realize the technology of planarization.The CMP of copper is generally divided into two steps, and the first step is a kind of
Polishing fluid quickly removes the copper metal that barrier layer covers above, and the polishing fluid generally has the very polishing speed of high-copper and low resistance
Barrier polishing speed, to stop over the barrier layer after quickly removing the unnecessary copper of barrier layer surface.Second step is stopped with a kind of
Layer polishing fluid removes barrier layer and a small amount of dielectric layer, real by removing selection ratio different between barrier layer, dielectric layer and copper
The planarization of existing integrated circuit.
Chemically mechanical polishing (CMP) field in the semiconductor industry, the main point acidity of the chemical mechanical polishing liquid used
With two kinds of alkaline slurry.
Being related to the patent of acid polishing slurry has a lot, such as CN1312845A patents, and a kind of acidity is disclosed in the patent
Barrier polishing solution, it contains metal abrasives and the surfactant of a large amount of macromoleculars.But there is polished surface damage in the polishing fluid
Wound, and for the with serious pollution acidic materials of equipment corrosion.
The barrier polishing solution of alkalescence, such as：CN101302405A patents, it which disclose a kind of alkali barrier and throw
Light liquid, it contains PVP and imines, carbonate, inhibitor, complexing agent.But it can be produced in polishing process
Substantial amounts of foam, polishing fluid is weighed in the skewness of polishing pad and polished surface, and influence the stability of polishing fluid.
Wherein, the stability of alkaline slurry is relatively good, but no suitable oxidant be present, and in polishing process easily
Cause surface cloud point and slight the problem of scratching.Acid Slurry shows certain advantage in this respect.It can grind
Reach higher polishing speed in the case of granule density is relatively low.But the size of abrasive grain can be with storage in Acid Slurry
The extension of time, gradually grown up in the presence of chemical constituent in the slurry.When particle diameter is more than after 120 nanometers, it may appear that sedimentation
Phenomena such as layering, quality of finish is had a strong impact on, cause product failure.So growing up for control abrasive particle, increases the service life
It is that Acid Slurry is eager to solve the problems, such as.
And for example, CN1400266 patents, the patent contain amine and nonionic surfactant.But the polishing fluid is in polishing
It is more severe to the surface losses on barrier layer.
In addition, chemical mechanical polishing liquid contains abrasive grains, it is most of to use nano silicon dioxide sol as abrasive material
Particle.In polishing fluid, also usually need to add some polymer to adjust the friction in the viscosity and polishing process of polishing fluid
Power, but this kind of polymer is added in acid polishing slurry can cause the coalescence of abrasive grains, especially electronegative abrasive grains.Close
There are many document reports in the stability of silicon dioxide gel.But increase in CMP fields on suppressing abrasive grain particle diameter, extend
The document of chemical mechanical polishing liquid stability has not been reported.
Dissaving polymer is the tree form modification of highly branched three-D space structure, contains the end that can be largely modified
Base, have it is intermolecular it is less tangle, dissolubility is good, viscosity is low, easy film forming and reactivity height etc. a little.Superbrnaching end-hydroxy gathers
The one kind of compound as dissaving polymer, not only all properties with dissaving polymer, simultaneously as mechanism outer end contains
There is substantial amounts of hydroxyl, reactivity is high, easily according to the different hyperbranched polies for needing progress chemical modification, synthesizing various performances
Compound, meet the various performance requirements in modern various fields.Due to all having inside dendrimers and hyperbranched polymer molecule
Have cavity, molecular surface has high functional group densities because can effectively complex ion, adsorb small molecule.
Daiamid PAMAM is to study most extensive, most deep dendrimers, its height cladodification, high degree of symmetry at present
It is one of the dendrimer of three kinds of commercializations and a large amount of functional groups are contained on surface, its compound with regular structure, molecular structure essence
Really, relative molecular mass is controllable, has high density surface functional group, the geometrical symmetry of height, and global molecular squeezes interior pine outside, point
Cavity in son be present and can adjust.The researchs such as Diallo find PAMAM (daiamid) dendrimers and Cu2+Complexing very
By force.Thick ability of Xu etc. has studied in detail PAMAM dendrimers and Cu2+Complexing diversified forms.According to two kinds of macromolecular knots
The similitude of structure understands that dissaving polymer equally has complex performance, therefore can be applied to the stabilization of hydrogen peroxide.1992
Year, the Kim and Webster of E.I.Du Pont Company have synthesized the first highly branched polymer, and are named as dissaving polymer.
It has substantial amounts of chain end functional group, therefore has higher end group reactivity, can carry out reaction kinetic, prepares feature
Material.Dissaving polymer preparation process is simple, and without fine separating-purifying, strict rate-determining steps are not needed in building-up process,
It can be advantageous to mass produce with one-step synthesis.
Hydrocarbon chain in daiamid PAMAM dendrimers is oil loving group, and carboxyl and amido are hydrophilic
Group, acted on so daiamid PAMAM dendrimers have possessed by the surfactant such as solubilising, demulsification, stable.But
Daiamid PAMAM dendrimers as surfactant be in structure with traditional surfactant it is different, with
Algebraically increases, and it is close to spherical, and traditional surfactant is mostly linear.Thus, daiamid PAMAM dendrimers
The characteristics of having its own again as surfactant.
Nano material it is small-sized, surface energy is very big, is easy to reunite in preparation process, thus prepare nanometer material
Select suitable dispersant and stabilizer critically important during material.Daiamid PAMAM dendrimers not only have internal cavities, and
With abundant surface functional group, so daiamid PAMAM dendrimers are the good templates for preparing nano material.Li Guoping
Deng using Amino End Group daiamid pamam dendrimer molecule as template, hydrazine hydrate is reducing agent, has obtained good dispersion in atmosphere,
Grain size is evenly distributed, the Cu cluster of structure and stable performance.Daiamid PAMAM is applied to chemistry in the present invention
In machine polishing liquor, realize high barrier layer and remove speed, and the cover closing material that is applicable in different polishing process and
The removal speed and selection ratio of metallic copper require.
The content of the invention
The present invention provides a kind of requirement for meeting the barrier polishing stage, and there is high barrier layer (Ta/TaN) to remove speed
Rate, it is suitable for cover closing material (TEOS) in different polishing process, the removal rate of Ni metal and selection ratio and requires, and quick correction
The ability of the defects of present in semiconductor device surface is strong, and pollutant residual is few, the high acidic chemical machine polishing liquor of stability.
The invention can also be used for the polishing on TSV barrier layers.
Specifically, the invention provides one kind, for the chemical mechanical polishing liquid of barrier layer planarization, the polishing fluid includes
Abrasive grains, azole compounds, organic/inorganic acid, oxidant, water and daiamid dissaving polymer PAMAM and siliceous
Organic compound.
Wherein, the abrasive grains are selected from SiO2、Al2O3、ZrO2、SiC、CeO2、TiO2And Si3N4In one or more,
It is preferred that SiO2；The mass percent concentration of the abrasive grains is preferably 1~15%, and more preferably 2~10%；The grinding
The particle diameter of particle is preferably 20~150nm, more preferably 20~100nm.
Wherein, described silicon-containing organic compound can be represented with following formulas：
Formula：
Wherein, R is unhydrolyzable substituent, usually alkyl；A, B are identical or different hydrolyzable substituent or hydroxyl
Base；C is hydrolyzable group or hydroxyl, or the alkyl substituent for non-hydrolysable；D is the organo-functional group being connected on R, choosing
From vinyl, amino, urea groups, sulfydryl, epoxy radicals, acrylic or acryloxy, these reactive groups can be anti-with organic substance
Answer and combine.Preferably, containing 1-10 carbon atom in the alkyl, A, B and the C in the formula are respectively selected from chloro, first
Epoxide, ethyoxyl, methoxy ethoxy, acetoxyl group or hydroxyl etc., silanol (Si (OH) 3) is generated when these groups hydrolyze,
And combined with inorganic substances, form siloxanes.More preferably, the alkyl contains 3-7 carbon atom, and on the alkyl carbon chain
Carbon atom can be substituted by oxygen, nitrogen, sulphur, phosphine, halogen or silicon atom.
Preferably, the silicon-containing organic compound be selected from APTES (trade name KH-550), γ-
(2,3- glycidoxies) propyl trimethoxy silicane (trade name KH-560), γ-(methacryloxypropyl) propyl trimethoxy
Silane (trade name KH-570), gamma-mercaptopropyltriethoxysilane (trade name KH-580), N- (β-aminoethyl)-γ-aminopropyl
Methyl dimethoxysilane (trade name KH-602), γ-aminoethylaminopropyl trimethoxy silane (trade name KH-792) and/or
One or more in γ-aminopropyltriethoxy diethoxy silane (trade name KH-902).Described silicon-containing organic compound
Mass percent concentration is preferably 0.01~1%, and more preferably 0.01~0.5%.
Wherein, the azole compounds preferably selected from BTA, methyl benzotriazazole, 5- phenyl tetrazole,
Mercaptophenyl tetrazole, benzimidazole, aphthotriazoles, 5- aminotetrazoles, 1,2,4- triazoles, the nitrogen of 3- amino -1,2,4 three
Azoles, the triazole of 4- amino -1,2,4,3,5- diaminostilbenes, one kind in 2,4 triazoles and/or 2- Mercapto-benzothiazoles.It is described
The mass percent concentrations of azole compounds be preferably 0.001~1%, more preferably 0.01~0.5%.
Wherein, the organic/inorganic acid preferably selected from acetic acid, propionic acid, oxalic acid, malonic acid, succinic acid, citric acid, oneself
One or more in diacid, tartaric acid, phosphoric acid, boric acid.The concentration of the mass percent of described organic/inorganic acid is preferable
For 0.001~1%, more preferably 0.01~0.5%.
Wherein, the molecular weight of the daiamid dissaving polymer PAMAM (structure is shown below) is preferably
6000~100000, more preferably 9000~50000.Described daiamid dissaving polymer PAMAM mass percent
Concentration is preferably：0.005~0.5%.
Wherein, described oxidant is preferably in hydrogen peroxide, Peracetic acid, potassium peroxydisulfate and/or ammonium persulfate
One or more.The mass percent concentration of described oxidant is preferably 0.01~5%, and more preferably 0.1~1%.
Wherein, the pH value of the chemical mechanical polishing liquid is 3.0-6.0, more preferably 4.0-6.0.
In addition, the chemical mechanical polishing liquid of the present invention can also include the addition of other this areas such as pH adjusting agent and bactericide
Agent.
The positive effect of the present invention is：
1. it may be such that there is polishing fluid excellent silicon dioxide etc. dielectric layer to remove speed by adding silicon-containing organic compound
The removal rate on the barrier layer such as rate and tantalum；
2. the polishing fluid of the present invention can reduce ultra-low dielectric materials ULK removal rate simultaneously；
3. providing a kind of polishing fluid formula of stable under acidic conditions, it can be in the relatively low feelings of abrasive grains solid content
Under shape (2%~10%), reach the grinding rate that can be only achieved between alkalescence polishing liquid abrasive grains content 30%-50%.
4. highly concentrated chemical mechanical polishing liquid can be prepared by this method.
Embodiment
The present invention is further illustrated below by the mode of embodiment, but described reality is not limited the present invention to this
Apply among a scope.
The chemical mechanical polishing liquid of the present invention can be prepared as follows：By the other components in addition to oxidant in proportion
It is well mixed, with pH adjusting agent (such as KOH or HNO3) adjust and arrive required pH values, using preceding oxidizer, it is well mixed i.e.
Can.And agents useful for same of the present invention and raw material are commercially available.
Table 1 below gives contrast polishing fluid 1 and the polishing fluid 1~15 of the present invention, by the formula given in table, will remove oxidation
Other components beyond agent are well mixed, with KOH or HNO3Adjust required pH value.It is equal using preceding oxidizer, mixing
It is even.Water is surplus.
Table 1 contrasts polishing fluid 1 and the polishing fluid 1~15 of the present invention
Effect example
Using contrast polishing fluid and the polishing fluid 1~15 of the present invention, in following conditions of stating to copper (Cu), tantalum (Ta), dioxy
SiClx (TEOS) is polished.Polishing condition：Polishing machine platform is 8 " Mirra boards, and polishing pad is Fujibo pad, and lower pressure is
1.5psi, rotating speed are polishing disk/rubbing head=93/87rpm, and polishing flow velocity is 150ml/min, polishing time 1min.
1~15 pair of copper (Cu) of contrast polishing fluid 1 and polishing fluid of the present invention, tantalum (Ta), silica are shown in table 2
(TEOS) removal rate and the comparable situation of correction ability.
The polishing effect of the embodiment 1~15 of table 2 and comparative example 1~2
From table 2, compared with contrasting polishing fluid 1, polishing fluid of the invention can obtain higher barrier layer Ta and two
The removal rate of silica (TEOS).Embodiment 1-15 shows by adjusting grinding agent, siliceous organic matter, azole compounds, having
The various concentrations of machine/inorganic acid, daiamid PAMAM and oxidant, suitable polishing selection ratio can be adjusted.Polished with contrast
Liquid 2 is compared, and this application provides a kind of polishing fluid formula of stable under acidic conditions, and it can be relatively low in abrasive grains solid content
In the case of (2%~10%), reach the grinding rate that can be only achieved between alkalescence polishing liquid abrasive grains content 30%-50%.
Found by embodiment 1-15 and the contrast of comparative example 1, the defects of polishing fluid of the invention is to the wide line area and fine line district
Correction significantly improves, can the short time correct semiconductor devices the defects of surface, so as to realize planarization.
It should be appreciated that %, wt% of the present invention refer to weight/mass percentage composition.
It should be noted that embodiments of the invention have preferable implementation, and not the present invention is made any type of
Limitation, any one skilled in the art change or are modified to possibly also with the technology contents of the disclosure above equivalent effective
Embodiment, as long as without departing from the content of technical solution of the present invention, above example is made according to technical spirit of the invention
Any modification or equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (27)
1. a kind of chemical mechanical polishing liquid for barrier layer planarization, include abrasive grains, azole compounds, organic/inorganic
Acid, oxidant and water, it is characterised in that also comprising silicon-containing organic compound and daiamid dissaving polymer PAMAM.
2. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the abrasive grains are selected from SiO2、Al2O3、
ZrO2、SiC、CeO2、TiO2And Si3N4In one or more.
3. chemical mechanical polishing liquid as claimed in claim 2, it is characterised in that the abrasive grains are SiO2。
4. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the particle diameter of the abrasive grains be 20~
150nm。
5. chemical mechanical polishing liquid as claimed in claim 4, it is characterised in that the particle diameter of the abrasive grains be 20~
100nm。
6. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the mass percent concentration of the abrasive grains
For 1~15%.
7. chemical mechanical polishing liquid as claimed in claim 6, it is characterised in that the mass percent concentration of the abrasive grains
For 2~10%.
8. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the formula of the silicon-containing organic compound is：
Wherein, R is unhydrolyzable substituent；A, B are identical or different hydrolyzable substituent or hydroxyl；C is hydrolyzable
Group or hydroxyl, or the alkyl substituent for non-hydrolysable；D is the organo-functional group being connected on R, selected from vinyl, amino,
Urea groups, sulfydryl, epoxy radicals, acrylic or acryloxy.
9. chemical mechanical polishing liquid as claimed in claim 8, it is characterised in that the R in the formula is alkyl, wherein containing
1-10 carbon atom, A, B and C in the formula are respectively selected from chloro, methoxyl group, ethyoxyl, methoxy ethoxy, acetyl oxygen
Base or hydroxyl.
10. chemical mechanical polishing liquid as claimed in claim 9, it is characterised in that the alkyl contains 3-7 carbon atom, and
Carbon atom on the alkyl carbon chain can be substituted by oxygen, nitrogen, sulphur, phosphine, halogen or silicon atom.
11. chemical mechanical polishing liquid as claimed in claim 8, it is characterised in that the silicon-containing organic compound is selected from 3- ammonia
Base propyl-triethoxysilicane (trade name KH-550), γ-(2,3- glycidoxies) propyl trimethoxy silicane (trade name
KH-560), γ-(methacryloxypropyl) propyl trimethoxy silicane (trade name KH-570), gamma-mercaptopropyltriethoxysilane
(trade name KH-580), N- (β-aminoethyl)-γ-aminopropyltriethoxy dimethoxysilane (trade name KH-602), γ-aminoethyl
Aminopropyl trimethoxysilane (trade name KH-792) and/or γ-aminopropyltriethoxy diethoxy silane (trade name KH-902)
In one or more.
12. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the quality of the siliceous organic compound
Percent concentration is 0.01~1%.
13. chemical mechanical polishing liquid as claimed in claim 12, it is characterised in that the quality of the siliceous organic compound
Percent concentration is 0.01~0.5%.
14. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the azole compounds are selected from the nitrogen of benzo three
Azoles, methyl benzotriazazole, 5- phenyl tetrazole, mercaptophenyl tetrazole, benzimidazole, aphthotriazoles, 5- aminotetrazoles,
1,2,4- triazoles, the triazole of 3- amino -1,2,4, the triazole of 4- amino -1,2,4,3,5- diaminostilbenes, 2,4 triazoles and
One or more in 2- Mercapto-benzothiazoles.
15. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the mass percent of the azole compounds
Concentration is 0.001~1%.
16. chemical mechanical polishing liquid as claimed in claim 15, it is characterised in that the mass percent of the azole compounds
Concentration is 0.01~0.5%.
17. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the organic/inorganic acid is selected from acetic acid, third
One or more in acid, oxalic acid, malonic acid, succinic acid, citric acid, adipic acid, tartaric acid, phosphoric acid, boric acid.
18. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the mass percent of the organic/inorganic acid
Concentration be 0.001~1%.
19. chemical mechanical polishing liquid as claimed in claim 18, it is characterised in that the quality percentage of the organic/inorganic acid
The concentration of ratio is 0.01~0.5%.
20. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the daiamid dissaving polymer
PAMAM molecular weight is 6000~100000.
21. chemical mechanical polishing liquid as claimed in claim 20, it is characterised in that the daiamid dissaving polymer
PAMAM molecular weight is 9000~50000.
22. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the daiamid dissaving polymer
PAMAM mass percent concentration is 0.005~0.5%.
23. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the oxidant is selected from hydrogen peroxide, peroxide
One or more in acetic acid, potassium peroxydisulfate and/or ammonium persulfate.
24. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the mass percent concentration of the oxidant
For 0.01~5%.
25. chemical mechanical polishing liquid as claimed in claim 24, it is characterised in that the mass percent concentration of the oxidant
For 0.1~1%.
26. chemical mechanical polishing liquid as claimed in claim 1, it is characterised in that the pH value of the chemical mechanical polishing liquid is
3.0-6.0。
27. chemical mechanical polishing liquid as claimed in claim 26, it is characterised in that the pH value of the chemical mechanical polishing liquid is
4.0-6.0。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610633749.9A CN107686702A (en) | 2016-08-04 | 2016-08-04 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610633749.9A CN107686702A (en) | 2016-08-04 | 2016-08-04 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107686702A true CN107686702A (en) | 2018-02-13 |
Family
ID=61151098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610633749.9A Pending CN107686702A (en) | 2016-08-04 | 2016-08-04 | A kind of chemical mechanical polishing liquid for barrier layer planarization |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107686702A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109575877A (en) * | 2019-01-21 | 2019-04-05 | 雷达 | A kind of maintenance of surface binding material and preparation method thereof |
| CN115305010A (en) * | 2021-03-18 | 2022-11-08 | 三星Sdi株式会社 | Chemical mechanical polishing slurry composition and method for polishing tungsten pattern wafer |
| CN115710463A (en) * | 2021-08-23 | 2023-02-24 | 三星Sdi株式会社 | CMP slurry composition for patterning tungsten wafer and tungsten polishing method |
-
2016
- 2016-08-04 CN CN201610633749.9A patent/CN107686702A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109575877A (en) * | 2019-01-21 | 2019-04-05 | 雷达 | A kind of maintenance of surface binding material and preparation method thereof |
| CN115305010A (en) * | 2021-03-18 | 2022-11-08 | 三星Sdi株式会社 | Chemical mechanical polishing slurry composition and method for polishing tungsten pattern wafer |
| CN115305010B (en) * | 2021-03-18 | 2024-04-26 | 三星Sdi株式会社 | Chemical mechanical polishing slurry composition and method for polishing tungsten pattern wafer |
| CN115710463A (en) * | 2021-08-23 | 2023-02-24 | 三星Sdi株式会社 | CMP slurry composition for patterning tungsten wafer and tungsten polishing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100445447B1 (en) | Aqueous dispersion for chemical mechanical polishing | |
| JP2019206718A (en) | Copper barrier chemical-mechanical polishing composition | |
| TWI506127B (en) | A method for chemical mechanical polishing a substrate | |
| TWI462999B (en) | Rate-enhanced cmp compositions for dielectric films | |
| WO2007029465A1 (en) | Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device | |
| JP2017525796A5 (en) | ||
| KR20070105301A (en) | Aqueous slurry containing metallate-modified silica particles | |
| CN113166587B (en) | Compositions and methods for chemical mechanical polishing of metals | |
| TW201723139A (en) | Chemical mechanical polishing slurry and application thereof | |
| JP5333744B2 (en) | Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and chemical mechanical polishing aqueous dispersion manufacturing method | |
| JP2019522896A (en) | Slurry composition for chemical-mechanical polishing | |
| TW201623555A (en) | Chemical mechanical polishing slurry and its application | |
| CN107686702A (en) | A kind of chemical mechanical polishing liquid for barrier layer planarization | |
| TWI757349B (en) | Silica-based particles for polishing and abrasives | |
| CN106928856A (en) | A kind of acidic chemical machine polishing liquor | |
| JP2012186339A (en) | Polishing liquid and polishing method of substrate using the same | |
| JP2010041027A (en) | Aqueous dispersion for chemical mechanical polishing and method of manufacturing the same, and chemical mechanical polishing method | |
| JP7351698B2 (en) | Silica particle dispersion and its manufacturing method | |
| KR20180089542A (en) | Composition for chemical-mechanical polishing (CMP) treatment comprising alkylamine and cyclodextrin | |
| CN105802512A (en) | Chemical mechanical polishing liquid and application thereof | |
| JP2010028078A (en) | Aqueous dispersion for chemical mechanical polishing, manufacturing method of the same, and chemical mechanical polishing method | |
| JP2010028082A (en) | Aqueous dispersion for chemical mechanical polishing, manufacturing method of the same, and chemical mechanical polishing method | |
| JP2009302551A (en) | Set for manufacturing water-based dispersing element for chemical-mechanical polishing | |
| CN106928855A (en) | A kind of acidic chemical machine polishing liquor | |
| CN106928857A (en) | A kind of acidic chemical machine polishing liquor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180213 |
|
| WD01 | Invention patent application deemed withdrawn after publication |