CN107680898A - Manufacture method, substrate board treatment and the storage medium of semiconductor device - Google Patents

Manufacture method, substrate board treatment and the storage medium of semiconductor device Download PDF

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Publication number
CN107680898A
CN107680898A CN201710648342.8A CN201710648342A CN107680898A CN 107680898 A CN107680898 A CN 107680898A CN 201710648342 A CN201710648342 A CN 201710648342A CN 107680898 A CN107680898 A CN 107680898A
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Prior art keywords
amorphous silicon
silicon film
process chamber
semiconductor device
manufacture method
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CN201710648342.8A
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CN107680898B (en
Inventor
宫仓敬弘
森谷敦
中矶直春
芳贺健佑
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INTERNATIONAL ELECTRIC CO Ltd
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Hitachi Kokusai Electric Inc
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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    • H01L21/02521—Materials
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    • H01L21/02532—Silicon, silicon germanium, germanium
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    • C23C16/04—Coating on selected surface areas, e.g. using masks
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled

Abstract

The application is related to manufacture method, substrate board treatment and the storage medium of semiconductor device.Problem to be solved by this invention is to improve the film quality of the Si films formed on substrate.As the means for solving above-mentioned problem, there is provided a kind of manufacture method of semiconductor device, it has：The process that the 1st amorphous silicon film is formed on substrate in process chamber；And in process chamber, at a temperature of the noncrystalline state of the 1st amorphous silicon film is maintained, the process that is etched using hydrogen chloride gas to a part for the 1st amorphous silicon film.

Description

Manufacture method, substrate board treatment and the storage medium of semiconductor device
Technical field
The present invention relates to the manufacture method of semiconductor device, substrate board treatment and storage medium.
Background technology
As a procedure of the manufacturing process of semiconductor device (Device), carry out forming silicon fiml on substrate sometimes The processing (referring for example to patent document 1,2) of (Si films).
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2003-218036 publications
Patent document 2：Japanese Unexamined Patent Publication 2003-218037 publications
The content of the invention
Invent problem to be solved
It is an object of the present invention to provide the technology for the film quality that can improve the Si films formed on substrate.
For solving the method for problem
According to the mode of the present invention, there is provided a kind of manufacture method of semiconductor device, it has：
The process that the 1st amorphous silicon film is formed on substrate in process chamber, and
In above-mentioned process chamber, at a temperature of the noncrystalline state of above-mentioned 1st amorphous silicon film is maintained, hydrogen chloride gas is used The process being etched to a part for above-mentioned 1st amorphous silicon film.
The effect of invention
In accordance with the invention it is possible to improve the film quality of the Si films formed on substrate.
Brief description of the drawings
Fig. 1 is the summary structure of the vertical treatment furnace of the substrate board treatment suitably used in an embodiment of the invention Cheng Tu, it is the figure for representing treatment furnace part with profilograph.
Fig. 2 is the summary structure of the vertical treatment furnace of the substrate board treatment suitably used in an embodiment of the invention Cheng Tu, it is the figure for representing treatment furnace part with Fig. 1 line A-A profile.
Fig. 3 is that the summary of the controller of the substrate board treatment suitably used in an embodiment of the invention is formed Figure, is the figure for representing the control system of controller with block diagram.
Fig. 4 is the figure on gas supply opportunity etc. in the film forming sequence for show an embodiment of the invention.
In Fig. 5, (a) be show sowing stage start before wafer surface texture profile, (b) be display sowing rank Section terminate after wafer surface texture profile, (c) be show the 1st text message terminate after wafer surface texture Profile, (d) be show etch phase terminate after wafer surface texture profile, (e) be display the 2nd text message knot The profile of the surface texture of wafer after beam.
Fig. 6 is the figure for the evaluation result for showing etch-rate.
Symbol description
121 controllers (control unit)
200 wafers (substrate)
200h Si films (the 1st amorphous silicon film)
200i Si films (the 1st amorphous silicon film)
201 process chambers
202 treatment furnaces
203 reaction tubes
207 heaters
250a, 250b gas supply hole
249a, 249b nozzle
217 wafer cassettes
267 rotating mechanisms
263 temperature sensors
218 heat-insulating shields
248 integrated-type supply systems
232a, 232b, 232c, 232d feed tube
241a, 241b, 241c, 241d mass flow controller
243a, 243b, 243c, 243d valve
220 O-rings
245 pressure sensors
231 blast pipes
244 APC valves
219 seal caps
255 rotary shafts
115 wafer cassette lifts
200a dielectric films
200e, 200f Seed Layer
200g Si films
Embodiment
＜ an embodiment of the invention ＞
Hereinafter, an embodiment of the invention is illustrated using Fig. 1~Fig. 3.
(1) composition of substrate board treatment
As shown in figure 1, treatment furnace 202 has the heater 207 as heating unit (heating arrangements).Heater 207 is Cylindrical shape, by being supported in holding plate and right angle setting.Heater 207 also serves as the activation equipment for making gas activation (exciting) with heat Structure (exciting portion) and play function.
The inner side of heater 207, it is equipped with heater 207 in concentric circles and forms reaction vessel (process container) Reaction tube 203.Reaction tube 203 is made up of the heat-resisting material such as quartzy (SiO2) or carborundum (SiC), forms upper end closed The cylindrical shape of lower ending opening.Process chamber 201 is formed in the cylinder hollow bulb of reaction tube 203.Process chamber 201 is used as base that can accommodate The mode of the wafer 200 of plate is formed.
In process chamber 201, nozzle 249a, 249b are provided with a manner of the lower sides through reaction tube 203.Nozzle 249a, 249b are connected to feed tube 232a, 232b.
In feed tube 232a, 232b, since upstream side, it is respectively equipped with successively as flow controller (flow Control unit) mass flow controller (MFC) 241a, 241b and valve 243a, 243b as switch valve.Feed tube 232a, 232b than valve 243a, 243b further downstreams, be connected to supply non-active gas feed tube 232c, 232d.In feed tube 232c, 232d, since upstream side, be respectively equipped with successively MFC241c, 241d and valve 243c, 243d。
Nozzle 249a, 249b are set in the following manner respectively：As shown in Fig. 2 in the inwall and wafer 200 of reaction tube 203 Between vertical view in circular space, along the bottom of the inwall from reaction tube 203 upwards, towards the arrangement side of wafer 200 Establish upward.That is, nozzle 249a, 249b is respectively located at the crystalline substance for being arranged with wafer 200 in a manner of along wafer arrangement region The region in the horizontal circle wafer arrangement region of circle best-fit field side.Supply is respectively equipped with nozzle 249a, 249b side Gas supply hole 250a, 250b of gas.Gas supply hole 250a, 250b is respectively in a manner of the center of orientating reaction pipe 203 Opening, gas can be supplied to wafer 200.Gas supply hole 250a, 250b is provided with more from the bottom of reaction tube 203 to top It is individual.
As the 1st unstrpped gas, the halogenated silanes unstrpped gas containing silicon (Si) and halogen is situated between from feed tube 232a Supplied from MFC241a, valve 243a, nozzle 249a into process chamber 201.Unstrpped gas is the raw material of gaseous state, such as logical Cross make be under normal temperature and pressure under gas, normal temperature and pressure obtained from the material gasification of liquid condition be raw material of gaseous state etc.. Halogenated silanes raw material is the silane raw material for having halogen group.Halogen group includes chloro, fluorine-based, bromo, iodo etc..That is, halogen Plain group includes the halogens such as chlorine (Cl), fluorine (F), bromine (Br), iodine (I).Halogenated silanes raw material could also say that one kind of halide. As halogenated silanes unstrpped gas, such as dichlorosilane (SiH can be used2Cl2, referred to as：DCS) gas.
Dopant gas from feed tube 232a via MFC241a, valve 243a, nozzle 249a into process chamber 201 Supply.As dopant gas, the hydrogen phosphide (PH for example containing the phosphorus (P) as dopant (impurity) can be used3, referred to as： PH) gas.
Etching gas supplies from feed tube 232a via MFC241a, valve 243a, nozzle 249a into process chamber 201 Should.As etching gas, such as hydrogen chloride (HCl) gas can be used.
As the 2nd, the 3rd unstrpped gas, containing Si but not halogen-containing silane gas from feed tube 232b via MFC241b, valve 243b, nozzle 249b supply into process chamber 201.As silane gas, such as single silane can be used (SiH4, referred to as：MS) gas, disilane (Si2H6, referred to as：DS) gas.
Hydrogen (H as hydrogeneous (H) gas2) gas, the nitrogen (N as non-active gas2) gas from feed tube 232c, 232d is respectively via MFC241c, 241d, valve 243c, 243d, feed tube 232a, 232b, nozzle 249a, 249b to place Manage in room 201 and supply.
The gas that supplies raw material mainly is formed by feed tube 232a, 232b, MFC241a, 241b, valve 243a, 243b The 1st supply system.Mainly the 2nd of supply etching gas the is respectively constituted by feed tube 232a, MFC241a, valve 243a 3rd supply system of supply system and supply dopant gas.Mainly by feed tube 232c, 232d, MFC241c, 241d, Valve 243c, 243d respectively constitute the 4th supply system and non-active gas supply system of supply hydrogen-containing gas.
In above-mentioned various supply systems, any or whole supply systems can be used as by valve 243a~243d, The integrated integrated-type supply system 248 formed such as MFC241a~241d and form.Integrated-type supply system 248 is in the following manner Form：Respectively connect feed tube 232a~232d, supply from various gases to feed tube 232a~232d action, I.e. valve 243a~243d switch motion, using MFC241a~241d carry out flow adjustment act etc. by control described later Device 121 controls.Integrated-type supply system 248 is formed in the following manner：As one-piece type or Splittable integrated unit by Form, for feed tube 232a~232d etc., can be dismounted in the form of integrated unit unit, can be with integrated single The form of first unit carries out the maintenance of supply system, replaces, sets up.
On reaction tube 203, provided with the blast pipe 231 that the atmosphere in process chamber 201 is exhausted.In blast pipe 231 On, via as the pressure sensor 245 of the pressure detector (pressure detecting portion) of pressure in detection process room 201 and as pressure APC (Auto Pressure Controller, automatic pressure control) valve 244 of force regulator (pressure adjustment unit), connection There is the vavuum pump 246 as exhaust apparatus.APC valves 244 are formed in the following manner：Can be by making vavuum pump 246 work In the state of controlled valve and carry out the vacuum exhaust in process chamber 201 and vacuum exhaust and stop, and then, can by make it is true In the state of empty pump 246 works, based on the pressure information controlling opening of valve detected using pressure sensor 245, so as to adjust Pressure in whole process chamber 201.Gas extraction system is mainly formed by blast pipe 231, APC valves 244, pressure sensor 245.Can be with Consider vavuum pump 246 being contained in gas extraction system.
In the lower section of reaction tube 203, provided with as the furnace access cap that can block the lower ending opening air-tightness of reaction tube 203 The seal cap 219 of body.Seal cap 219 is formed such as the metal as SUS, is formed as discoid.The upper surface of seal cap 219 is provided with The O-ring 220 of the seal member abutted as the lower end with reaction tube 203.In the lower section of seal cap 219, be provided with make it is aftermentioned The rotating mechanism 267 that wafer cassette 217 rotates.The rotary shaft 255 of rotating mechanism 267 is through seal cap 219 and is connected to wafer cassette 217.Rotating mechanism 267 is formed in the following manner：By making the rotation of wafer cassette 217 rotate wafer 200.Seal cap 219 with Following manner is formed：By the use of the wafer cassette lift 115 as elevating mechanism outside reaction tube 203, in vertical direction Upper lifting.Wafer cassette lift 115 as by lifting seal cap 219, by wafer 200 to moving into inside and outside process chamber 201 and Take out of the conveying device (conveying mechanism) of (conveying) and form.
Wafer cassette 217 as substrate support is formed in the following manner：Make multiple, such as 25~200 wafers 200 with The mode of horizontal attitude and in the state of mutual center alignment, in vertical direction arrangement and multistage support, i.e., to leave between Formed every the mode of ground arrangement.Wafer cassette 217 is made up of the heat-resisting material such as quartz, SiC.In the bottom of wafer cassette 217, The heat-insulating shield 218 formed by the heat-resisting material such as quartz, SiC is supported with horizontal attitude by multistage.
The temperature sensor 263 as temperature detector is provided with reaction tube 203.By based on by temperature sensor 263 temperature informations detected adjust the energization situation to heater 207, and the temperature in process chamber 201 turns into desired temperature Distribution.Inwall of the temperature sensor 263 along reaction tube 203 is set.
As shown in figure 3, the controller 121 as control unit (control device) is used as and possesses CPU (Central Processing Unit) 121a, RAM (Random Access Memory) 121b, storage device 121c, I/O port 121d Computer and form.RAM121b, storage device 121c, I/O port 121d are with can be via internal bus 121e and CPU121a The mode for carrying out data exchange is formed.It is connected with controller 121 as the input/output unit formed such as touch-screen 122。
Storage device 121c such as flash memory, HDD (Hard Disk Drive) by forming.In storage device 121c, with The mode that can be read, it is stored with the control program of the action of control base board processing unit, records processing substrate described later Technical recipe (process recipe) of step, condition etc. etc..Technical recipe is described later can perform controller 121 The mode of result is combined as defined in each step, acquisition in processing substrate process, and function is played as program.Hereinafter, Also the technical recipe, control program etc. are referred to generally simply as program.In addition, also technical recipe is referred to as being formulated.This specification In, in the case of having used the word of program one, sometimes only including formulation monomer, sometimes only including control program monomer or sometimes Including both above-mentioned.RAM121b is as the temporary transient storage region (workspace for preserving the program read using CPU121a, data etc. Domain) and form.
I/O ports 121d is connected to above-mentioned MFC241a~241d, valve 243a~243d, pressure sensor 245, APC valves Door 244, vavuum pump 246, heater 207, temperature sensor 263, rotating mechanism 267, wafer cassette lift 115 etc..
CPU121a is formed in the following manner：While reading control program from storage device 121c and performing, according to next From moving into for the operational order of input/output unit 122, read and be formulated from storage device 121c.CPU121a is in the following manner Form：In a manner of the formula content for deferring to reading, control is adjusted using the flow of MFC241a~241d various gases carried out Action, valve 243a~243d switch motion, the switch motion of APC valves 244 and the utilization based on pressure sensor 245 Pressure adjustment action, the startup of vavuum pump 246 and the stopping of the progress of APC valves 244, heater 207 are based on temperature sensor 263 Temperature adjustment action, using rotating mechanism 267 carry out wafer cassette 217 rotation and rotary speed regulation action, utilize crystalline substance Lifting action of wafer cassette 217 that circle box lift 115 is carried out etc..
Controller 121 can be by that will be stored in external memory (such as the light such as CD, the MO such as the disk such as hard disk, CD The semiconductor memories such as disk, USB storage) 123 said procedure installs and forms on computers.Storage device 121c, External memory 123 is formed as the storage medium that computer can be read.Hereinafter, also they are referred to generally simply as depositing Storage media.When term as storage medium has been used in this specification, only include storage device 121c monomers, sometimes only sometimes Including the monomer of external memory 123 or sometimes including both above-mentioned.In addition, providing program to computer can not also make Carried out with external memory 123 using communication modes such as internet, special circuits.
(2) processing substrate process
On the procedure as the process using aforesaid substrate processing unit manufacture semiconductor device, as substrate Wafer 200 on formed silicon fiml (Si films) sequence example, illustrated using Fig. 4, Fig. 5 (a)~Fig. 5 (e).It is convenient in Fig. 4 For the sake of, eliminate N2The diagram on the supply opportunity of gas.In the following description, the action for forming each portion of substrate board treatment utilizes Controller 121 controls.
In film forming sequence shown in Fig. 4, implement to form the 1st of the 1st amorphous Si film on the wafer 200 in process chamber 201 Text message, and HCl gases are used to the 1st at a temperature of the noncrystalline state of the 1st amorphous Si film is maintained in process chamber 201 The etch phase that a part for amorphous Si film is etched, then further implement to be etched in a part in process chamber 201 The 2nd text message of the 2nd amorphous Si film is formed on the 1st amorphous Si film afterwards.
In above-mentioned film forming sequence, the 1st, the 2nd amorphous Si film formation respectively by supplying the wafer 200 in process chamber 201 MS gases and PH gases is answered to carry out.In addition, in above-mentioned film forming sequence, before the 1st text message is implemented, implement to process chamber The sowing stage of the alternate supplies DCS gases of wafer 200 and DS gases in 201.In addition, in above-mentioned film forming sequence, lost Before stage at quarter and after progress, implement to supply H to wafer 200 respectively2Gas hydrogen purging the stage (the 1st, the 2nd hydrogen purging Stage).
In this specification use " wafer " as term when, mean wafer sometimes in itself, mean sometimes wafer with Defined layer, the layered product of film formed on its surface.When term as " surface of wafer " is used in this specification, sometimes The surface of wafer in itself is meant, means the surface of the defined layer formed on wafer etc. sometimes.It is described in this specification When " layer as defined in formed on wafer ", mean in layer as defined in wafer formation directly on a surface in itself, anticipate sometimes sometimes Think of is layer as defined in formation on layer formed on wafer etc..Used in this specification as word " substrate " during term It is equivalent in meaning during with using term as word " wafer ".
(wafer load and wafer cassette are carried)
Multiple wafers 200 are loaded in wafer cassette 217 (wafer load).Then, as shown in figure 1, supporting multiple wafers 200 Wafer cassette 217 lifted by wafer cassette lift 115, moved into process chamber 201 (wafer cassette carrying).Under the state, sealing Cap 219 turns into the state for sealing the lower end of reaction tube 203 via O-ring 220.
As wafer 200, the Si substrates being for example made up of single crystalline Si or surface can be used formed with single crystalline Si film Substrate.As shown in Fig. 5 (a), the surface of wafer 200 is provided with recess, and the bottom of recess is made up of single crystalline Si, the sidepiece of recess and upper Portion is made up of dielectric film 200a such as silicon oxide layers (SiO films).The surface of wafer 200 turns into single crystalline Si and dielectric film 200a reveals respectively The state gone out.
Before wafer 200 is moved into process chamber 201, the surface of wafer 200 is washed with hydrogen fluoride (HF) etc. in advance.Its In, to during being moved into process chamber 201 after carrying out washing treatment, the surface of wafer 200 is temporarily exposed to air.Therefore, to place At least a portion on the surface for the wafer 200 moved into reason room 201 is formed with Natural Oxide Film (SiO films).Natural Oxide Film has When formed by sparsely in a manner of the bottom of (island) covering recess, a part for the single crystalline Si exposed, in addition, also sometimes Formed in a manner of the whole region for the single crystalline Si that continuously (non-island) covering is exposed.
(pressure adjusts and temperature adjustment)
Using vavuum pump 246, by vacuum exhaust (decompression exhaust) in process chamber 201, to cause in process chamber 201, i.e. crystalline substance Space present in circle 200 turns into desired pressure (vacuum).Now, the pressure in process chamber 201 is by pressure sensor 245 Measure, based on the pressure information that this is measured to, APC valves 244 are by feedback control.In addition, utilize the heat treatment chamber of heater 207 In 201, to cause the wafer 200 in process chamber 201 to turn into desired treatment temperature.Now, detected based on temperature sensor 263 To temperature information carry out the situation that feedback control is powered to heater 207, to turn into desired temperature point in process chamber 201 Cloth.In addition, start with the rotation of the wafer 200 of the progress of rotating mechanism 267.Exhaust, heating, wafer 200 in process chamber 201 Rotation persistently carried out during before the processing at least to wafer 200 terminates.
(sowing stage)
Then, the following stage 1,2 is carried out successively.
[stage 1]
In this stage, DCS gases are supplied to wafer 200.Specifically, valve 243a is opened, DCS gases is flowed into gas In body supply pipe 232a.DCS gases carry out flow adjustment using MFC241a, are supplied via nozzle 249a into process chamber 201, It is vented from blast pipe 231.Now, DCS gases are supplied to wafer 200.Now, while valve 243c is opened, makes N2Gas flows into In feed tube 232c.N2Gas carries out flow adjustment using MFC241c, is supplied together with DCS gases into process chamber 201 Should, it is vented from blast pipe 231.In addition, in order to prevent DCS gases from being invaded into nozzle 249b, valve 243d is opened, makes N2Gas Flowed into feed tube 232d.N2Gas is supplied via feed tube 232b, nozzle 249b into process chamber 201, from Blast pipe 231 is vented.
, can be in the bottom of recess, i.e. single crystalline Si by supplying wafer 200 the DCS gases containing the big Cl of electronegativity On, the Si-O keys contained by Natural Oxide Film are cut off, Natural Oxide Film is removed.Thereby, it is possible to produce Si in the bottom of recess to be total to The dangling bonds (dangling bond, being not associated with key) of valence link, form the environment for easily carrying out epitaxial growth.Furthermore, it is possible to recessed The sidepiece in portion and top, i.e. on dielectric film 200a, the Si-O keys contained by dielectric film 200a surface are cut off.Thus, it is possible to Dielectric film 200a surface forms Si uncombined key, i.e. Si adsorption site.
Then, valve 243a is closed, stops the supply of DCS gases.Now, APC valves 244 are set to keep opening, are utilized Vavuum pump 246 in process chamber 201 to being exhausted.Now, be set in the state of valve 243c, 243d keep open, maintain to N in process chamber 2012Gas is supplied.N2Gas plays a role as purge gas.
[stage 2]
After stage 1 terminates, DS gases are supplied to wafer 200.In this stage, by by with the valve 243a in the stage 1, 243c, 243d switch control same step to carry out valve 243b~243d switch control, DS gases is supplied to gas Flowed into pipe 232b.DS gases in inflow gas supply pipe 232b carry out flow adjustment using MFC241b, via nozzle 249b Supply into process chamber 201, be vented from blast pipe 231.
By supplying DS gases to wafer 200, in the bottom of recess the Si contained by DS can be made to be incorporated into by the stage 1 The Si of formation uncombined key, form Si core (seed).It is epitaxial growth that this, which is grown under aftermentioned treatment conditions,.In addition, can On the sidepiece of recess and top, to make the Si contained by DS be adsorbed in the Si formed in the stage 1 adsorption site, form Si kind Son.This is grown under aftermentioned treatment conditions grows for amorphous (noncrystalline).
Then, valve 243b is closed, stops the supply of DS gases.Moreover, by the processing step same with the stage 1 to place Reason is exhausted in room 201.Now, the N into process chamber 201 is maintained2Gas is supplied.N2Gas plays as purge gas to be made With.
[implementation stipulated number]
The circulation in alternately above-mentioned stage 1,2 is subjected to stipulated number (n times (n is more than 1 integer)).Thus, such as Shown in Fig. 5 (b), Seed Layer 200e can be formed in the bottom of recess, Seed Layer is formed respectively in the sidepiece of recess and top 200f.Seed Layer 200e is formed by the crystalline single crystalline Si (epitaxy Si) for inheriting substrate, is formed and is densely covered recess The pantostrat of bottom.Seed Layer 200f is formed by amorphous Si, forms the sidepiece for densely covering recess and the pantostrat on top.
Hereinafter, the treatment conditions of sowing stage are illustrated.Condition as shown below is also that can make outside Seed Layer 200e Epitaxial growth, the condition for making Seed Layer 200f amorphous growths.
DCS gases, the supply flow of DS gases are set to the flow for example in the range of 10~1000sccm.DCS gases, The supply time of DS gases is set to the time in the range of such as 0.5~10 minute.The N supplied by each feed tube2 The supply flow of gas is set to the flow for example in the range of 100~10000sccm.
The temperature (sowing temperature) of wafer 200 is set to the temperature in the range of such as 350~450 DEG C.Pressure in process chamber 201 Power (sowing pressure) is set to the pressure for example in the range of 1~1000Pa.
If sowing temperature is less than 350 DEG C or sowing pressure is less than 1Pa, above-mentioned DCS gases, DS gases sometimes Act on insufficient, it is difficult to form Seed Layer 200e, 200f.By the way that sowing temperature is set into more than 350 DEG C of temperature or will be broadcast Kind pressure is set to more than 1Pa pressure, can form Seed Layer 200e, 200f.
If sowing temperature more than 450 DEG C or sowing pressure being more than 1000Pa, sometimes in the bottom of recess, in day Before right oxide-film is removed, the Si contained by DCS accumulates, and carries out amorphous growth.In addition, sometimes in the sidepiece of recess and upper Portion, it is difficult to using the cut-out of the DCS Si-O keys carried out, it is difficult to form Seed Layer 200f.By the way that sowing temperature is set into 450 Temperature below DEG C or the pressure that will sow pressure and be set to below 1000Pa, can eliminate these problems.
The implementation number of the alternately circulation in stage 1,2 is set to the number for example in 1~20 underrange.Seed Layer 200e, 200f thickness are set to for exampleIn the range of thickness.
As the 1st unstrpped gas, in addition to DCS gases, monochlorosilane (SiH can also be used3Cl, referred to as：MCS) gas Body, trichlorosilane (SiHCl3, referred to as：TCS) gas, tetrachloro silicane (SiCl4, referred to as：STC) gas, hexachloro-silane (Si2Cl6, referred to as：HCDS) gas, the silane (Si of eight chlorine three3Cl8, referred to as：OCTS) the chlorosilane unstripped gas containing Cl such as gas Body.
As the 2nd unstrpped gas, in addition to DS gases, MS gases, three silane (Si can also be used3H8, referred to as：TS) Gas, tetrasilane (Si4H10) gas, five silane (Si5H12) gas, six silane (Si6H14) the formula Si such as gasnH2n+2(n be 1 with On integer) represented by silane gas.
As non-active gas, except N2Beyond gas, it can also use rare such as Ar gas, He gas, Ne gas, Xe gas Gas.
(the 1st text message)
After sowing stage terminates, the temperature of wafer 200 is set to film-forming temperature, the pressure in process chamber 201 is set into Film pressure.Fig. 4, which is shown, to be set to film-forming temperature than the high temperature of sowing temperature, is set to film pressure and to sow pressure same Deng pressure example.Then, MS gases, PH gases are supplied to wafer 200.In this stage, by by with the above-mentioned stage 1 Valve 243a, 243c, 243d switch control same step to carry out valve 243b~243d switch control, make MS gases Flowed into feed tube 232b.MS gases in inflow gas supply pipe 232b carry out flow adjustment using MFC241b, are situated between Supplied into process chamber 201 from nozzle 249b, be vented from blast pipe 231.In addition, now, open valve 243a, make PH gases to Flowed into feed tube 232a.PH gases carry out flow adjustment using MFC241a, via nozzle 249a into process chamber 201 Supply, is vented from blast pipe 231.Now, to wafer 200, MS gases and PH gases are supplied together.
By supplying MS gases, PH gases to wafer 200, Si films 200g can be made in Seed Layer in the bottom of recess Grown on 200e.It is epitaxial growth that this, which is grown under treatment conditions described later,.It is same with Seed Layer 200e, Si films 200g crystal Structure is to inherit the crystalline monocrystalline of substrate.Furthermore, it is possible to sidepiece and top in recess, make Si films 200h in Seed Layer Grown on 200f.This, which is grown under treatment conditions described later, turns into amorphous growth.It is same with Seed Layer 200f, Si films 200h crystalline substance Body structure is amorphous.By the way that PH gases are supplied together with MS gases, P compositions can be added respectively in Si films 200g, 200h, These films can be made to doping Si films.
As shown in Fig. 5 (c), by persistently above-mentioned processing, Si films 200g top is by the Si films of the sidepiece growth from recess 200h is covered.Thus, Si films 200g epitaxial growth stops.In this state, in recess, i.e. on wafer 200, formed The stepped construction that Si films 200h is formed is laminated on Si films 200g.Boundaries of the Si films 200g between wafer 200 and Si films 200h Formed on face.
By continuing to above-mentioned processing, at least face side (open side) of recess turns into the shape blocked by Si films 200h State.That is, the face side of recess turns into the shape blocked by the Si films 200h grown in a manner of being dangled from the sidepiece of recess and top State.But in the process, the non-landfill region (cavity, gap) stretched in the depth direction can be produced in recess sometimes.If Before the inside of recess is by Si films 200h completely landfill, the face side of recess is blocked, then MS gases do not reach the interior of recess Portion (growth of the Si films 200h in recess stops), the inside of recess produce cavity.For cavity, the depth-width ratio of recess is (recessed The width of the depth/recess in portion) it is bigger, be specially more than 1, be, for example, more than 20, further be more than 50, then easier production It is raw.
After the face side of recess is blocked by Si films 200h, valve 243b, 243a are closed, stops MS gases, PH gases respectively Supply into process chamber 201.Moreover, by the processing step same with the above-mentioned stage 1, to being exhausted in process chamber 201. Now, N is maintained2Supply of the gas into process chamber 201.N2Gas plays a role as purge gas.MS gases, PH gases Supply stops before the face side of recess turns into by state that Si films 200h blocks completely to stop, can also be as complete Stop after the state of obstruction.
The treatment conditions of the 1st text message are illustrated below.Condition as shown below is also that can make outside Si films 200g Epitaxial growth, the condition for making Si film 200h amorphous growths.
The supply flow of MS gases is set to the flow for example in the range of 10~2000sccm.The supply flow of PH gases is Si P concentration in film 200g, 200h turns into such as 1.0 × 1021~1.0 × 1022atoms/cm3In the range of concentration flow, if For the flow for example in the range of 1~1000sccm.MS gases, the supply time of PH gases are set to such as 20~400 minutes In the range of time.The N supplied by each feed tube2The supply flow of gas is set to such as 100~10000sccm In the range of flow.
The temperature (film-forming temperature) of wafer 200 is set to the temperature in the range of such as 450~550 DEG C.Pressure in process chamber 201 Power (film pressure) is set to the pressure for example in the range of 1~900Pa.
If film-forming temperature is less than 450 DEG C or film pressure is less than 1Pa, MS is difficult to decompose sometimes, it is difficult to forms Si Film 200g, 200h.By the way that film-forming temperature to be set to more than 450 DEG C of temperature or film pressure is set to more than 1Pa pressure Power, MS decomposition can be promoted, Si films 200g, 200h formation can be carried out with the speed of practicality.
If film-forming temperature is more than 550 DEG C or film pressure is more than 900Pa, MS decomposition behavior becomes acute sometimes It is strong, or the coated property deterioration of Si films 200g, 200h film thickness uniformity, difference of height.Sometimes caused particle in process chamber 201 Amount increase, makes the quality of film process reduce.By the way that film-forming temperature to be set to less than 550 DEG C of temperature or by film pressure Below 900Pa pressure is set to, the decomposition behavior of MS gases can be relaxed, avoids these problems.
As the 3rd unstrpped gas, except MS gases, above-mentioned silane gas, chlorosilane unstrpped gas can also be used.For Residuals of the Cl in Si films 200g, 200h is avoided, preferably using silane gas as the 3rd unstrpped gas, in order to improve Si Film 200g, 200h rate of film build, preferably it is used as the 3rd unstrpped gas using chlorosilane unstrpped gas.
As dopant gas, except PH gases, arsine (AsH can also be used3) gas etc. is containing P, the gas of arsenic (As), i.e., Contain gas of the 15th race's element as dopant.In addition, as dopant gas, diborane (B can also be used2H6) gas, Three chloroborane (BCl3) gas of boracic (B) such as gas, contain gas of the 13rd race's element as dopant.
As non-active gas, except N2Gas, above-mentioned rare gas can also be used.
(the 1st hydrogen purges the stage)
After 1st text message terminates, H is supplied to wafer 2002Gas.In this stage, opening valve 243c, 243d, H2 Gas flows into feed tube 232c, 232d.H2Gas carries out flow adjustment using MFC241c, 241d, is supplied via gas Should pipe 232a, 232b, nozzle 249a, 249b supplied into process chamber 201, be vented from blast pipe 231.Now, wafer 200 is supplied Answer H2Gas.By supplying H to wafer 2002Gas, it is whole hydrogen can be carried out to the Si films 200h formed on wafer 200 surface Only, whole surface region clean is made.
Then, valve 243c, 243d are closed, stops H2Supply of the gas into process chamber 201.Now, in APC valves In the state of 244 open, using vavuum pump 246 to being exhausted in process chamber 201.At this time it is also possible to by N2Gas is to processing Supplied in room 201.N2Gas plays a role as purge gas.
The H supplied by each feed tube2The supply flow of gas is set to for example in the range of 500~3000sccm Flow.H2The supply time of gas is set to the time in the range of 30~120 minutes.(the 1st hydrogen purges the temperature of wafer 200 Temperature) it is the temperature same with above-mentioned film-forming temperature, the temperature being set in the range of such as 450~550 DEG C.In process chamber 201 Pressure (the 1st hydrogen purges pressure) is set to the pressure for example in the range of 500~2000Pa.
(etch phase)
After the 1st hydrogen purging stage terminates, HCl gases are supplied to wafer 200.
In this stage, valve 243a is opened, HCl gases is flowed into feed tube 232a.HCl gases utilize MFC241a carries out flow adjustment, supplies into process chamber 201 via nozzle 249a, is vented from blast pipe 231.Now, to wafer 200 supply HCl gases.Valve 243c, 243d are closed, and do not implement N2Supply of the gas into process chamber 201.
By supplying HCl gases to wafer 200, the Si films 200h formed on wafer 200 a part can be lost Carve.By the way that the part for blocking recess surface side among Si films 200h is removed, its lower empty upper opening formed, dew is formed Go out the state in cavity., can be further to forming empty inwall by making etching process continue the stipulated time in this condition The Si films 200h of (side wall, bottom) is etched, and its opening can be made to become big.HCl gases to cavity inside supply, from Surface lateral bottom side is slowly reduced.Therefore, as shown in Fig. 5 (d), empty vertical section shape turns into A/F from bottom side The V-shape or reverse trapezoid shape become larger to face side., can by the way that the cavity exposed is adjusted into such shape Promote MS gases in the 2nd text message described later to the supply inside the cavity exposed.As a result, the interior of recess can be made Portion fully, is i.e. filled by Si films in a manner of the state without cavity.In addition, the etching process need to cover by Si films 200h , Si films 200g carries out in the range of not exposing, i.e. carried out in the range of the Si films 200g of substrate is not etched.That is, it needs to control The terminal of etching process processed, to cause the finish time in etching process, turn into cavity inwall on only expose amorphous Si without Expose the state of single crystalline Si (epitaxy Si).
Then, valve 243a is closed, stops supply of the HCl gases into process chamber 201.Now, beaten in APC valves 244 In the state of opening, using vavuum pump 246 to being exhausted in process chamber 201.At this point it is possible to by N2Gas is into process chamber 201 Supply.N2Gas plays a role as purge gas.
The treatment conditions of etch phase are illustrated below.Condition as shown below is also to maintain to be formed on wafer 200 The condition of Si films 200h noncrystalline state, i.e. avoid the condition of Si films 200h crystallization.That is, condition as shown below It is conditions of the Si films 200h without multimerization (polycrystallization), and the condition without epimerization (single crystallization).In addition, Condition as shown below is also the condition of the inner evenness for the etch quantity for maintaining Si films 200h, i.e. Si films 200h etch quantity Whole region turns into uniform condition in face.
The supply flow of HCl gases is set to the flow for example in the range of 100~10000sccm.The supply time of HCl gases The time being set in the range of such as 10~60 minutes.
The temperature (etch temperature) of wafer 200 is the temperature same with above-mentioned film-forming temperature, is set to such as 450~550 DEG C In the range of temperature.Pressure (etching pressure) in process chamber 201 is the pressure higher than above-mentioned film pressure, is set to such as 1000 ~50000Pa, preferably 10000~40000Pa, the pressure more preferably in the range of 20000~30000Pa.
Under above-mentioned etch temperature, if etching pressure is less than 1000Pa, etching process or etching are difficult to sometimes The inner evenness of amount reduces., can be with reality by the way that etching pressure to be set to more than 1000Pa pressure under above-mentioned etch temperature The inner evenness of etch quantity is etched, improved with the speed of property.By the way that etching pressure is set into more than 10000Pa's Pressure, etch-rate can be increased really, further improve the inner evenness of etch quantity.By the way that etching pressure is set to More than 20000Pa pressure, it can more reliably obtain these effects.
Under above-mentioned etch temperature, if etching pressure is excessively carried out more than 50000Pa, etching process, it is difficult to reality sometimes Shape control during existing above-mentioned empty shaping, the terminal point control of etching process.Under above-mentioned etch temperature, by the way that etching pressure is set For below 50000Pa pressure, these problems can be avoided., can by the way that etching pressure to be set to below 40000Pa pressure Really these problems are avoided.By the way that etching pressure to be set to below 30000Pa pressure, more reliably these can be avoided to ask Topic.
(the 2nd hydrogen purges the stage)
After etch phase terminates, by the processing step same with the 1st hydrogen purging stage, supplied into process chamber 201 H2Gas.Thereby, it is possible to exclude the Cl of residual in process chamber 201 out of process chamber 201.Then, by being purged with the 1st hydrogen Stage same processing step, to being exhausted in process chamber 201.At this time it is also possible to supply N into process chamber 2012Gas.N2 Gas plays a role as purge gas.H2The supply time of gas is set to the time in the range of 10~60 minutes.Other processing Condition is set to identical with the treatment conditions in the 1st hydrogen purging stage.
(the 2nd text message)
After the 2nd hydrogen purging stage terminates, by the processing step same with the 1st text message, MS is supplied to wafer 200 Gas, PH gases.MS gases, the supply time of PH gases are set to the time in the range of such as 10~300 minutes.Its elsewhere Manage bar part is set to identical with the treatment conditions of the 1st text message.
By supplying MS gases, PH gases to wafer 200, it can make Si films 200i on wafer 200, i.e. after etching process Si films 200h surface on grow.Si films 200i also doping Si films being set to doped with P same with Si films 200h.As above institute State, except the supply time of gas, the treatment conditions of the 2nd text message and the treatment conditions of the 1st text message are same.This Outside, the empty inwall widened that is open is in not expose epitaxy Si, only expose amorphous Si state.Therefore, Si films 200i growth Amorphous growth is similarly when being grown with Si films 200h.Si films 200h surface is covered by the Si films 200i of noncrystalline state.It is in addition, empty The inside in hole is filled completely by the Si films 200i of noncrystalline state with the state without cavity.
Then, valve 243a, 243b are closed, stops MS gases, supply of the PH gases into process chamber 201 respectively.Moreover, By the processing step same with the above-mentioned stage 1, to being exhausted in process chamber 201.Now, N is maintained2Gas is to process chamber Supply in 201.N2Gas plays a role as purge gas.
(recovering after purging with atmospheric pressure)
After 2nd text message terminates, N is supplied into process chamber 201 from feed tube 232c, 232d respectively2Gas, from Blast pipe 231 is vented.N2Gas plays a role as purge gas.Thus, purged, located with non-active gas in process chamber 201 Manage the gas of residual in room 201, byproduct of reaction is removed (after purging) out of process chamber 201.Then, in process chamber 201 Atmosphere is replaced into non-active gas (non-active gas displacement), and the pressure in process chamber 201 recovers normal pressure (atmospheric pressure recovery).
(wafer cassette unloads and wafer release)
Decline seal cap 219 using wafer cassette lift 115, make the lower ending opening of reaction tube 203.Then, handled Wafer 200 taken out of in the state of being supported by wafer cassette 217 from the lower end of reaction tube 203 to the outside (wafer of reaction tube 203 Box unloads).The wafer 200 handled is taken out (wafer release) by wafer cassette 217.
(3) effect that present embodiment obtains
According to present embodiment, one or more effects as shown below are obtained.
(a) by using HCl gases as etching gas, even if etch temperature to be set as to the temperature same with film-forming temperature Spend (temperature in the range of 450~550 DEG C), Si films 200h etching process can also carried out.Thereby, it is possible to improve at substrate The productivity ratio of reason.
Because use chlorine (Cl2) gas as etching gas in the case of, in order to be etched to Si films 200h, need Etch temperature is set to such as 350 DEG C or so of temperature.In this case, it is necessary to the 1st text message and etch phase it Between set and temperature in process chamber 201 is reduced by more than 100 DEG C and standby temperature-fall period before its temperature stabilization.This Outside, it is also necessary to which being set between etch phase and the 2nd text message makes the temperature in process chamber 201 rise more than 100 DEG C and arrive The standby temperature rise period untill its temperature stabilization.
And in contrast, in the present embodiment, can implement at the same temperature from the 1st text message to the 2 one-tenth A series of stages of mem stage, it is therefore not necessary to set temperature-fall period, temperature rise period between these stages.Thereby, it is possible to make substrate The step of processing, simplifies, or shortens the total time needed for processing substrate, it is possible to increase the productivity ratio of processing substrate.
(b) by being etched at a temperature of Si films 200h noncrystalline state is maintained, it is able to maintain that Si films 200h The high state of etch-rate.
Because in temperature (temperature more than 550 DEG C, such as 800~1300 DEG C scopes higher than above-mentioned etch temperature Interior temperature) under be etched in the case of, sometimes due to Si films 200h crystallization, i.e. Si films 200h crystalline state send out Changing, etch-rate reduce.In addition, Si films 200h it is a part of it is local-crystalized changed in the case of, the part that has crystallized Etch-rate it is lower than other parts, the surface of Si films 200h after the etching forms bumps sometimes.As a result, wafer sometimes The surface roughness deterioration of the Si films (stacked film for including Si film 200h, Si films 200i) ultimately formed on 200, i.e. film surface Smoothness reduces.
And in contrast, in present embodiment, at a temperature of Si films 200h noncrystalline state is maintained, it will not make Si Film 200h crystalline state is etched in a low temperature of changing, it is thus possible to maintains the state that etch-rate is high.This Outside, film thickness uniformity in the face of the Si films ultimately formed can be improved, surface roughness is maintained good state.
(c) by under the pressure higher than film pressure, specifically 1000~50000Pa, preferably 10000~ It is etched under 40000Pa, the pressure more preferably in the range of 20000~30000Pa, can effectively carries out Si films 200h Etching.Furthermore it is possible to maintain the inner evenness of etch quantity, uniform film thickness in the face of the Si films ultimately formed can be improved Property, surface roughness is maintained good state.
(d) by adulterating P in Si films 200h, its concentration being set into such as 1.0 × 1021~1.0 × 1022atoms/cm3 In the range of concentration, it is possible to increase used the Si films 200h of HCl gases etch-rate.Thereby, it is possible to shorten processing substrate Required total time, improve the productivity ratio of processing substrate.
(e) by being etched the stage in the state of not being etched to the Si films 200g of substrate, it is able to maintain that etching The high state of speed.Furthermore, it is possible to improve film thickness uniformity in the face of the Si films ultimately formed, surface roughness is set to remain good State.Furthermore, it is possible to the state that Si films 200g does not expose in the outmost surface of wafer 200 is maintained, can be in the 2nd text message In make Si film 200i amorphous growths.Because the growth rate of amorphous growth is faster than epitaxial growth, it is thus possible to shorten processing substrate Required total time, improve the productivity ratio of processing substrate.Further, it is also possible to avoid entering shape by being etched Go in the recess of adjustment, cavity is produced again because Si films 200i growth rate is different.
(f) stage is purged by implementing the 1st hydrogen before etch phase is implemented, Si films 200h surface cleaning can be made, Thus, it is possible to improve the efficiency of etching process followed by or improve the inner evenness of etch quantity.In addition, by Implement the 2nd hydrogen purging stage after implementing etch phase, it is possible to increase the efficiency for removing Cl in from process chamber 201, thus, can To improve the film quality for the Si films 200i being subsequently formed.
(g) sowing stage of alternate supplies DCS gases and DS gases is implemented before the 1st text message, it is thus possible to have Effect ground carries out Si films 200g, 200h film process or improves the film quality of these films, film thickness uniformity in face.
(h) the effect above is using situation of the halogenated silanes unstrpped gas as the 1st unstrpped gas beyond DCS gases Under, in the case where using the silane gas beyond DS gases as the 2nd unstrpped gas, using the hydrogenation beyond MS gases Silicon gas as the 3rd unstrpped gas in the case of, in the case where using the gas beyond PH gases as dopant gas Can equally it obtain.
(4) variation
Film forming sequence in present embodiment is not limited to above-mentioned form, and variation that can be as shown below is changed like that Become.
(variation 1)
The P concentration ratios for the Si films 200h that can make to be formed before implementation etch phase implement the Si films formed after etch phase 200i P concentration is high.For example, the P concentration in Si films 200h can be set to 3.0 × 1021~1.0 × 1022atoms/cm3Scope Interior concentration, the P concentration in Si films 200i is set to 1.0 × 1021~2.0 × 1021atoms/cm3In the range of concentration.For example, This can be realized by operations described below：By the supply flow of the PH gases in the 1st text message be set to 600~1000sccm, The supply flow of PH gases in 2nd text message is set to 1~500sccm etc., makes the confession of the PH gases in the 1st text message Answer flow, the supply flow of PH gases in the text message of intrinsic standoff ratio the 2nd, partial pressure big.By making to be used as etching by this way P concentration in the Si films 200h of object is sufficiently above the P concentration in such as Si films 200i, it is possible to increase above-mentioned etch-rate carries High effect.
(variation 2)
The Si films 200i for implementing to be formed after etch phase can also be set to the non-impurity-doped Si films undoped with P.For example, can be with P concentration in Si films 200h is set to 1.0 × 1021~1.0 × 1022atoms/cm3In the range of concentration, Si films 200i is set to Non-impurity-doped Si films.By the P concentration that makes to be used as in the Si films 200h of etch target by this way sufficiently above such as Si films P concentration in 200i, it can equally obtain the raising effect of above-mentioned etch-rate.
(variation 3)
Supply flow, partial pressure of PH gases etc. can also be increased in the midway of the 1st text message, make to make among Si films 200h P concentration for the P concentration ratios other parts (than surface closer to the part of lower layer side) of the part of the face side of etch target is high. Such as the 1st text message can be started by the way that the supply flow of PH gases is set into 1~500sccm, in the 1st text message The supply flow of PH gases is changed into 600~1000sccm etc. to realize by midway.By making by this way in Si films 200h P concentration as the part of etch target is especially high, can further improve the raising effect of above-mentioned etch-rate.
(variation 4)
1st hydrogen was purged among stage and the 2nd hydrogen purging stage, it is convenient to omit the implementation of either phase.In addition, also may be used To omit the implementation in the two stages respectively.
The other embodiment ＞ of the ＜ present invention
More than, specifically embodiments of the present invention are illustrated.But the invention is not restricted to above-mentioned embodiment, In scope without departing from the spirit, there can be various changes.
The formula used in processing substrate preferably individually prepares according to process content, via telecommunication line, external storage Device 123 is stored in storage device 121c.Also, it is preferred that in start to process, CPU121a according to the content of processing substrate from The suitable suitable formula of selection in multiple formulas of storage in storage device 121c.Thereby, it is possible to repeatability to utilize 1 well Substrate board treatment forms various film species, combination ratio, the film of film quality, thickness.Furthermore it is possible to reduce the burden of operator, energy Enough avoid operating mistake and promptly start to process.
Above-mentioned formula is not limited to newly formed situation, can also for example be installed on having for substrate board treatment by changing Formula prepare.In the case of changing formula, can by the formula after change via telecommunication line, store the storage of the formula Medium is installed on substrate board treatment.In addition it is also possible to operate existing substrate board treatment possessed input/output unit 122, directly change the existing formula installed in substrate board treatment.
In above-mentioned embodiment, the example of film is formed to the batch type substrate board treatment using disposable multiple substrates of processing Son is illustrated.The invention is not restricted to above-mentioned embodiment, such as in the single page using disposably 1 or several substrate of processing In the case that formula substrate board treatment forms film, can also suitably it apply.In addition, in above-mentioned embodiment, to hot using having The example that the substrate board treatment of wall-shaped treatment furnace forms film is illustrated.The invention is not restricted to above-mentioned embodiment, makes In the case of forming film with the substrate board treatment with cold-wall type treatment furnace, can also suitably it apply.At these substrates Manage device in the case of, can with the sequence same with above-mentioned embodiment, variation, treatment conditions carry out film forming, obtain with The same effect of above-mentioned embodiment, variation.
Contact caused by the Si films formed by the method for above-mentioned embodiment can be suitable for the landfill of contact hole is inserted The purposes such as the formation of head.
Above-mentioned embodiment, variation etc. can be used with proper combination.In addition, treatment conditions now can be set to example Such as treatment conditions same with above-mentioned embodiment.
Embodiment
Hereinafter, the experimental result of the effect to supporting to obtain in above-mentioned embodiment, variation illustrates.
Using aforesaid substrate processing unit, by carrying out sowing stage, the 1st text message of the film forming sequence shown in Fig. 4, Si films are formed on wafer.P concentration in Si films is set to 7.0 × 1020、1.0×1021、2.1×1021atoms/cm3.Moreover, By carrying out the etch phase of the film forming sequence shown in Fig. 4, the surface of Si films is etched.Etching pressure is set to 20000, 30000Pa.Other treatment conditions are set to the condition in the condition and range described in above-mentioned embodiment.
Fig. 6 is the figure for the evaluation result for representing etch-rate.Transverse axis represents etching pressure (Pa) in figure, and the longitudinal axis represents etching Speed◇, ■, △ is marked to represent that P concentration is 7.0 × 10 respectively in figure20、1.0×1021、2.1×1021atoms/ cm3Si films data.It can be seen from Fig. 6, in the case of any P concentration, any etching pressure, the erosion of practicality is obtained Etching speed.In addition understand, make that P concentration is higher, makes etching pressure higher in addition, then can more improve the etch-rate of Si films.

Claims (18)

1. a kind of manufacture method of semiconductor device, it has：
The process that the 1st amorphous silicon film is formed on substrate in process chamber, and
In the process chamber, at a temperature of the noncrystalline state of the 1st amorphous silicon film is maintained, using hydrogen chloride gas to institute State the process that a part for the 1st amorphous silicon film is etched.
2. the manufacture method of semiconductor device according to claim 1, carried out in the part to the 1st amorphous silicon film In the process of etching, the pressure in the process chamber is set in process chamber during than forming 1 amorphous silicon film The high pressure of pressure.
3. the manufacture method of semiconductor device according to claim 1, carried out in the part to the 1st amorphous silicon film In the process of etching, the pressure in the process chamber is set to maintain to the pressure of the etch quantity uniformity of the 1st amorphous silicon film.
4. the manufacture method of semiconductor device according to claim 1, carried out in the part to the 1st amorphous silicon film In the process of etching, the pressure in the process chamber is set to more than 1000Pa and below 50000Pa.
5. the manufacture method of semiconductor device according to claim 1, carried out in the part to the 1st amorphous silicon film In the process of etching, the pressure in the process chamber is set to more than 10000Pa and below 40000Pa.
6. the manufacture method of semiconductor device according to claim 1, carried out in the part to the 1st amorphous silicon film In the process of etching, the pressure in the process chamber is set to more than 20000Pa and below 30000Pa.
7. the manufacture method of semiconductor device according to claim 1, it further has following process：In the processing Interior, the process that the 2nd amorphous silicon film is formed on the 1st amorphous silicon film after a part is etched.
8. the manufacture method of semiconductor device according to claim 1, the 1st amorphous silicon film is doped with dopant Film.
9. the manufacture method of semiconductor device according to claim 8, the 2nd amorphous silicon film is doped with dopant Film, make the concentration of dopant in the 1st amorphous silicon film higher than the concentration of dopant in the 2nd amorphous silicon film.
10. the manufacture method of semiconductor device according to claim 8, the 2nd amorphous silicon film is undoped with dopant Film.
11. the manufacture method of semiconductor device according to claim 8, dense by the dopant in the 1st amorphous silicon film Degree is set to 1.0 × 1021atoms/cm3Above and 1.0 × 1022atoms/cm3Below.
12. the manufacture method of semiconductor device according to claim 1, carrying out one to the 1st amorphous silicon film Before dividing the process being etched, further with following process：To the supply substrate hydrogen-containing gas in the process chamber Process.
13. the manufacture method of semiconductor device according to claim 1, carrying out one to the 1st amorphous silicon film After dividing the process being etched, further with following process：The process that hydrogen-containing gas is supplied into the process chamber.
14. the manufacture method of semiconductor device according to claim 1, the surface of the substrate, which is exposed, monocrystalline silicon and absolutely Velum.
15. the manufacture method of semiconductor device according to claim 1, the surface of the substrate is provided with recess, described recessed The bottom in portion is made up of monocrystalline silicon, and the sidepiece of the recess is made up of dielectric film.
16. the manufacture method of semiconductor device according to claim 15,
In the process for forming the 1st amorphous silicon film, extension is formed at the interface of the 1st amorphous silicon film and the monocrystalline silicon Silicon fiml；
In the process being etched to a part for the 1st amorphous silicon film, in the state of the epitaxial silicon film is not etched, A part for 1st amorphous silicon film is etched.
17. a kind of substrate board treatment, it has：
The process chamber handled substrate,
The 1st supply system of silicon-containing gas is supplied into the process chamber,
The 2nd supply system of hydrogen chloride gas is supplied into the process chamber,
The heater heated to the substrate in the process chamber, and
Control unit, it is formed in the following manner：To carry out forming the place of the 1st amorphous silicon film on the substrate in the process chamber Manage and use hydrogen chloride gas pair at a temperature of the noncrystalline state of the 1st amorphous silicon film is maintained in the process chamber The mode for the processing that a part for 1st amorphous silicon film is etched, to the 1st supply system, the 2nd supply system And the heater is controlled.
18. the storage medium that a kind of computer can be read, it is characterised in that the storage medium is stored with makes base using computer Plate processing unit performs the program of following steps：
The step of 1 amorphous silicon film is formed on substrate in the process chamber of the substrate board treatment, and
It is right using hydrogen chloride gas at a temperature of the noncrystalline state of the 1st amorphous silicon film is maintained in the process chamber A step of part for 1st amorphous silicon film is etched.
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