CN107671732A - Polishing solution supply system - Google Patents
Polishing solution supply system Download PDFInfo
- Publication number
- CN107671732A CN107671732A CN201710532812.4A CN201710532812A CN107671732A CN 107671732 A CN107671732 A CN 107671732A CN 201710532812 A CN201710532812 A CN 201710532812A CN 107671732 A CN107671732 A CN 107671732A
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- Prior art keywords
- polishing
- accumulator tank
- pipeline
- valve
- polishing fluid
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- 238000005498 polishing Methods 0.000 title claims abstract description 166
- 239000007788 liquid Substances 0.000 claims abstract description 83
- 238000000227 grinding Methods 0.000 claims abstract description 23
- 239000012530 fluid Substances 0.000 claims description 83
- 230000001590 oxidative effect Effects 0.000 claims description 33
- 230000033116 oxidation-reduction process Effects 0.000 claims description 32
- 239000007800 oxidant agent Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000010979 pH adjustment Methods 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 239000013307 optical fiber Substances 0.000 claims description 3
- 238000002835 absorbance Methods 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 2
- 239000007924 injection Substances 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910019093 NaOCl Inorganic materials 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(III) nitrate Inorganic materials [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Inorganic materials O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0475—Changing the shape of the semiconductor body, e.g. forming recesses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Abstract
The invention provides a polishing solution supply system, which comprises a storage tank, a first pipeline, a first valve, a pH sensor and a controller, wherein the storage tank is used for containing a polishing solution. The storage tank is communicated to a chip polishing device through an output pipeline and a return pipeline, and the storage tank is communicated with a pH adjusting liquid supply source through the first pipeline. The first valve is disposed on the first pipeline. The pH sensor is arranged in the storage tank, and the controller controls the first valve according to the pH value sensed by the pH sensor, so that the pH value of the polishing solution in the storage tank is maintained within a preset pH value range. Therefore, the grinding and polishing efficiency of the chip grinding and polishing device during grinding and polishing the chips is effectively controlled, and the processing quality is maintained.
Description
Technical field
The invention belongs to CMP art, is related to a kind of polishing liquid supply system.
Background technology
During by semiconductor device fabrication chip, before extension is carried out, in order to ensure the flatness of chip surface
Or the thickness of chip is reduced, it can all carry out polishing technique.Currently used polishing mode is chemically-mechanicapolish polishes (CMP), core
Piece is in polishing, it is necessary to adds polishing fluid and carries out polishing, has the compositions such as abrasive material, etching solution in polishing fluid, to accelerate polishing
Speed.For silicon, chemically mechanical polishing has been quite ripe technology, however, the core for chemical inertness material
For piece, when carrying out polishing using presently commercially available polishing fluid, its polishing efficiency is bad.By taking the silicon that is carbonized as an example, carborundum
Chip can be used for the fields such as high potential assembly, high power component, solar cell, and carbonization silicon needs to expend when carrying out polishing
Longer time so that the cost increase of polishing technique so that component cost made of silicon remains high to be carbonized.It is based on
This, it would be highly desirable to a kind of polishing liquid supply system is proposed, can effectively control chip polishing efficiency, and maintain the crudy of polishing.
The content of the invention
(1) technical problems to be solved
The invention provides one kind to polish liquid supply system, at least partly to solve technical problem set forth above.
(2) technical scheme
According to an aspect of the invention, there is provided a kind of polishing liquid supply system, including：One accumulator tank, an efferent duct
Road, a return line, one first pipeline, one first valve, a pH sensors and a controller；Wherein, the accumulator tank is holding
Put a polishing fluid；Output pipe connection accumulator tank inside and a chip grinding and polishing device, to convey the polishing fluid to the chip
Grinding and polishing device；The return line is connected inside the accumulator tank with the chip grinding and polishing device, is returned to receive the chip grinding and polishing device
The polishing fluid of stream；First pipeline connection accumulator tank inside and pH adjustment liquid sources of supply, are supplied to convey pH adjustment liquid
Ying Yuan pH adjustment liquid；First valve is arranged on first pipeline, controlled and open or block first pipeline；The pH is passed
Sensor is arranged inside the accumulator tank, to sense the pH value of polishing fluid in the accumulator tank；The controller be electrically connected with this first
Valve and the pH sensors, the pH value sensed according to the pH sensors control first valve, make the pH of polishing fluid in the accumulator tank
Value maintains a predetermined pH value range.
In one embodiment of the invention, polishing fluid includes oxidant and acidic chemical liquid.
In one embodiment of the invention, predetermined pH value range is between 2~pH of pH 5.
In one embodiment of the invention, polishing liquid supply system also includes：One second pipeline, one second valve and one
Oxidation-reduction potential sensor；Wherein, the second pipeline connection accumulator tank inside and an oxidant source of supply, to convey this
The oxidant of oxidant source of supply；Second valve is arranged on second pipeline, controlled and open or block second pipeline,
Make that the oxidant of the oxidant source of supply delivers to the accumulator tank or the accumulator tank is injected in blocking oxide agent；The oxidation-reduction potential passes
Sensor is arranged inside the accumulator tank, to sense the oxidation-reduction potential of polishing fluid in the accumulator tank；The controller is also electrical
Second valve and the oxidation-reduction potential sensor are connected, the redox electricity sensed according to the oxidation-reduction potential sensor
Position controls second valve, the oxidation-reduction potential of polishing fluid in the accumulator tank is maintained more than a predetermined potential.
In one embodiment of the invention, polishing liquid supply system also includes：One the 3rd pipeline, one the 3rd valve and one
Liquid level detecting device；Wherein, the 3rd is provided with the 3rd pipeline with a water source inside the 3rd pipeline connection accumulator tank
Valve, it is controlled and open or block the 3rd pipeline, the water at the water source is delivered to the accumulator tank or is blocked water to inject the storage
Groove；The liquid level detecting device is arranged inside the accumulator tank, to sense the liquid level in the accumulator tank；The controller is also electrically connected with
3rd valve and the liquid level detecting device, according to the valve of Liquid level the 3rd that the liquid level detecting device is detected open or block this
Three pipelines, the liquid level of polishing fluid in the accumulator tank is set to be maintained at more than a predetermined fluid level.
In one embodiment of the invention, polishing liquid supply system also includes：One heat-exchange tube and a temperature controller；Its
In, the heat-exchange tube is connected to the temperature controller, to control the temperature of polishing fluid in the accumulator tank to be maintained at predetermined temperature, avoids throwing
Light liquid S temperature is too high.
In one embodiment of the invention, polishing liquid supply system also includes：One spectrometer, the spectrometer include：One
Optical detector, a light source and a main frame；Wherein, the optical detector is arranged inside the accumulator tank, is detected in the accumulator tank and is thrown
The absorptance of light liquid；The light of the light source is transmitted in the accumulator tank and the polishing that is irradiated in inside the accumulator tank through optical fiber
Liquid；The absorbance range that the main frame detects according to the optical detector is indicated that it is predetermined to reach one in the absorptance detected
During absorptance, a prompting signal is sent, the prompting signal can transmit to loudspeaker or display, be carried in the form of sound or image
Show the polishing fluid more renewed.
In one embodiment of the invention, a draw-off pump is provided with output pipe, the draw-off pump stores to extract
Polishing fluid in groove, to be delivered to chip grinding and polishing device.
In one embodiment of the invention, a filtration members are provided with return line, polishing is recovered by filtration in the filtration members
Impurity in liquid.
In one embodiment of the invention, the oxidation-reduction potential of polishing fluid is more than 500mV.
(3) beneficial effect
It can be seen from the above technical proposal that present invention polishing liquid supply system has the advantages that：
By controlling the pH value of polishing fluid in predetermined pH value range and controlling oxidation-reduction potential or the offer of polishing fluid
Oxidation-reduction potential more than 500mV polishing fluid, can effectively control chip grinding and polishing device in polishing chip polishing effect
Rate and the crudy for maintaining polishing.
Brief description of the drawings
Fig. 1 is the graph of a relation according to the oxidizing potential of a preferred embodiment of the present invention polishing fluid, pH value and processing times.
Fig. 2 be in embodiment illustrated in fig. 1 for the first time to the 4th processing polishing chip surface photo, in photo
1st, 2nd, 3rd, 4thPhoto shown in representing respectively is first time, second, third time and the 4th chip surface for processing polishing
Photo.
Fig. 3 is the polishing liquid supply system of present pre-ferred embodiments.
【Accompanying drawing main element symbol description】
100- polishes liquid supply system；
10- accumulator tanks；
12- output pipes；122- draw-off pumps；
14- return lines；142- filtration members；
The pipelines of 16- first；The valves of 162- first；
The pipelines of 18- second；The valves of 182- second；
The pipelines of 20- the 3rd；The valves of 202- the 3rd；
22- controllers；
24-pH sensors；26- oxidation-reduction potential sensors；
28- liquid level detecting devices；30- heat-exchange tubes；
32- temperature controllers；34-pH adjusts liquid source of supply；
36- oxidants are supplied；38- water sources；
40- spectrometers；
402- optical detectors；404- light sources；
406- main frames；
200- chip grinding and polishing devices；
S- polishing fluids.
Embodiment
For the object, technical solutions and advantages of the present invention are more clearly understood, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
Fig. 1 is according to the graph of a relation of the oxidizing potential of one preferred embodiment polishing fluid of invention, pH value and processing times, please be joined
According to shown in Fig. 1, in the present embodiment, the chip grinding and polishing device polishing chip, core of institute's polishing by the way of chemically mechanical polishing
Piece is by taking the silicon that is carbonized as an example.In order to promote polishing efficiency, strong oxidizer and acidification are added with polishing fluid in the present embodiment
Agent is learned, the oxidizing potential of polishing fluid (stoste) is 1148mV, and pH value 2.4, during processing polishing every time, polishing fluid circulates
Recycling.As shown in Figure 1, with the number increase of processing, the oxidizing potential of polishing fluid gradually reduces, and pH value gradually rises
Height, above-mentioned phenomenon are due to polishing fluid with chip reaction or caused by heat caused by polishing.
Fig. 2 is for the first time to the photo of the 4th chip surface for processing polishing in embodiment illustrated in fig. 1.Incorporated by reference to Fig. 1
From the point of view of Fig. 2, it can be seen that, with the increase of processing times, the quantity of pit (pits) defect on chip surface is also therewith
Increase.It can be seen that the oxidation-reduction potential of polishing fluid will influence the crudy of chip polishing with pH value.
Based on above-mentioned principle, a kind of polishing liquid supply system 100 is present embodiments provided, makes polishing fluid S pH value and oxygen
Change reduction potential can be stablized is supplied to chip grinding and polishing device 200 in certain scope, above-mentioned polishing fluid.Fig. 3 for the present invention compared with
The polishing liquid supply system of good embodiment, shown in reference picture 3, the polishing liquid supply system 100 includes：One accumulator tank 10, one is defeated
Go out pipeline 12, a return line 14, one first pipeline 16, one second pipeline 18, one the 3rd pipeline 20 and a controller 22.
The each several part for polishing liquid supply system to the present embodiment below describes in detail.
In the present embodiment, the accumulator tank 10 includes oxidant and acidity to accommodating polishing fluid S, wherein polishing fluid S
Chemical liquids, polishing fluid S oxidation-reduction potential is more than 500mV；Oxidant uses KMnO in the present embodiment4, but not with this
It is limited, can also uses H2O2、NaOCl、Fe(NO3)3、MnO2Deng oxidant.A pH sensors 24, one are provided with the accumulator tank 10
The liquid level detecting device 28 of oxidation-reduction potential sensor 26 and one, wherein, the pH sensors 24 are thrown to sense in the accumulator tank 10
Light liquid S pH value；The oxidation-reduction potential sensor 26 is sensing the oxidation-reduction potential of polishing fluid S in the accumulator tank 10；
The liquid level detecting device 28 is detecting the liquid level of polishing fluid S in the accumulator tank 10.A heat-exchange tube 30 is provided with the accumulator tank 10,
The heat-exchange tube 30 is connected to a temperature controller 32, to control the temperature of polishing fluid S in the accumulator tank 10 to be maintained at predetermined temperature, keeps away
It is too high to exempt from polishing fluid S temperature.
In the present embodiment, the output pipe 12 connection inside of accumulator tank 10 and the chip grinding and polishing device 200, the efferent duct
A draw-off pump 122 is provided with road 12, the draw-off pump 122 is to extract the polishing fluid S in the accumulator tank 10, to be delivered to the core
Piece grinding and polishing device 200.
In the present embodiment, the return line 14 connection inside of accumulator tank 10 and the chip grinding and polishing device 200, to receive
The polishing fluid that the chip grinding and polishing device 200 is flowed back.A filtration members 142 are provided with the return line 14, the mistake of filtration members 142
Filter the impurity in the polishing fluid of recovery, such as the crystallization in polishing fluid.
In the present embodiment, the first pipeline 16 connection inside of accumulator tank 10 and pH adjustment liquid source of supply 34, this first
One first valve 162 is provided with pipeline 16, first valve 162 is controlled and opens or block first pipeline 16, adjusts the pH
The pH adjustment liquid of whole liquid source of supply 34 is delivered in the accumulator tank 10 or blocked pH adjustment liquid to inject the accumulator tank 10.
In the present embodiment, the second pipeline 18 connection inside of accumulator tank 10 and an oxidant source of supply 36, second pipe
One second valve 182 is provided with road 18, second valve 182 is controlled and opens or block second pipeline 18, makes the oxidant
The oxidant of source of supply 36 is delivered to the accumulator tank 10 or the accumulator tank 10 is injected in blocking oxide agent.The oxidant source of supply 36
Oxidant is preferred with oxidant of the oxidation-reduction potential higher than 500mV, and oxidant is KMnO in the present embodiment4Chemical liquids, and oxygen
It is about more than 800mV to change reduction potential.
In the present embodiment, the 3rd pipeline 20 connects the inside of accumulator tank 10 and a water source 38, is set on the 3rd pipeline 20
It is equipped with one the 3rd valve 202, the 3rd valve 202 is controlled and opens or block the 3rd pipeline 20, conveys the water at the water source 38
To the accumulator tank 10 or water is blocked to inject the accumulator tank 10.In the present embodiment, the water at the water source 38 is deionized water.
In the present embodiment, the controller 22 is electrically connected with the pH sensors 24, the oxidation-reduction potential sensor 26, the liquid
Position detector 28, first valve 162, the valve 202 of the second valve 182 and the 3rd.The controller 22 is according to the institute of pH sensors 24
The pH value of sensing controls first valve 162 to open or block first pipeline 16, ties up the pH value of polishing fluid S in the accumulator tank 10
Hold in a predetermined pH value range, the present embodiment, the lower limit of the predetermined pH value range is pH 2, and the upper limit is pH 5.Specifically,
When the controller 22 judges that the pH value that the pH sensors 24 are sensed exceedes the upper limit of the predetermined pH value range, control this first
Valve 162 opens first pipeline 16, the pH adjustment liquid of pH adjustment liquid source of supply 34 is injected into the accumulator tank 10；When the control
When device 22 processed judges that the pH value that the pH sensors 24 are sensed is less than the lower limit of the predetermined pH value range, first valve 162 is controlled
Block first pipeline 16.Thus, polishing fluid S pH value is allowed to maintain in the range of predetermined pH value.
In the present embodiment, oxidation-reduction potential control that the controller 22 is sensed according to the oxidation-reduction potential sensor 26
Make second valve 182 and open or block second pipeline 18, maintain the oxidation-reduction potential of polishing fluid S in the accumulator tank 10
More than one predetermined potential, the predetermined potential is 500mV in the present embodiment.Specifically, when the controller 22 judges the oxidation also
When the oxidation-reduction potential that former current potential sensor 26 is sensed is less than predetermined potential, second valve 182 is controlled to open second pipe
Road 18, the oxidant of the oxidant source of supply 36 is set to be injected into the accumulator tank 10, due to the oxidation of the oxidant source of supply 36
The oxidation of agent goes back current potential and is higher than predetermined potential, after oxidant is injected in polishing fluid S, can make polishing fluid S oxidation-reduction potential
Rise.When the controller 22 judges that the oxidation-reduction potential that the oxidation-reduction potential sensor 26 is sensed is higher than the predetermined potential
During a upper boundary potential (such as 1200mV) of the above, second valve 182 is controlled to block second pipeline 18.Thus, polishing fluid S is made
Oxidation go back current potential and maintain more than predetermined potential.
In the present embodiment, the controller 22 is opened according to the valve 202 of Liquid level the 3rd that the liquid level detecting device 28 is detected
Lead to or block the 3rd pipeline 20, the liquid level of polishing fluid S in the accumulator tank 10 is maintained at more than a predetermined fluid level.Come in detail
Say, when the controller 22 judges that the liquid level that the liquid level detecting device 28 is detected is less than the predetermined fluid level, control the 3rd valve 202
The 3rd pipeline 20 is opened, the water at the water source 38 is injected into the accumulator tank 10；When the controller 22 judges the liquid level detecting
When the liquid level that device 28 is detected is more than the predetermined fluid level, the 3rd valve 202 is controlled to block the 3rd pipeline 20.Inject water into throwing
Purpose in light liquid S, it is to maintain polishing fluid S moisture content to allow, avoids the chip grinding and polishing device 200 in the process of polishing chip
Middle polishing fluid S moisture evaporation and influence polishing fluid S concentration, cause pH value and oxidizing potential to make a variation.
Said structure can make the polishing fluid S in the accumulator tank 10 maintain the pH value range and oxidizing potential scope of permission
It is interior, influence the processing efficiency and crudy of polishing chip so as to avoid pH value from changing with oxidizing potential.
In order to more ensure polishing fluid S quality, the polishing liquid supply system 100 of the present embodiment also includes a spectrometer 40,
The spectrometer 40 includes an optical detector 402, a light source 404 and a main frame 406, and the optical detector 402 is arranged at the storage
Inside groove 10, the light of the light source 404 transmits interior to the accumulator tank 10 and is irradiated in the accumulator tank 10 through optical fiber (not shown)
Internal polishing fluid.Polishing fluid S is in specific optical band in the main frame 406 transmission optical detector 402 detecting accumulator tank 10
Absorptance, when the absorptance detected is up to a predetermined absorptance, the main frame 406 sends a prompting signal, and the prompting signal can
Loudspeaker (not shown) or display (not shown) are sent to, personnel's polishing that should more renew is prompted in the form of sound or image
Liquid S.For example, polishing fluid S is newly one first color (such as purple) using chemical liquids, when using repeatedly after, polishing fluid S by
When being gradually changed into the second color (such as brown), the main frame 406 judges polishing fluid S in the absorptance of the optical band of the second color
When increasing up to the predetermined absorptance, representing polishing fluid S can not use, and the main frame 406 then sends prompting signal.
Mentioned above, polishing liquid supply system 100 of the invention is polished by providing oxidation-reduction potential for more than 500mV
Liquid S, control polishing fluid S oxidation-reduction potential and control polishing fluid S pH value can be controlled effectively in the range of predetermined pH value
The consistent crudy of polishing efficiency and maintenance of the coremaking piece grinding and polishing device when polishing chip.
The preferable possible embodiments of the present invention are the foregoing is only, foregoing chip grinding and polishing device is only intended to explanation originally
The polishing liquid supply system of invention, and the polishing liquid supply system of the limitation present invention is not used to, such as using description of the invention
And in claims content equivalence changes, ought to be included in the present invention the scope of the claims in.
Certain embodiments of the invention will be done with reference to appended accompanying drawing in rear and more comprehensively describe to property, some of but not complete
The embodiment in portion will be illustrated.In fact, various embodiments of the present invention can be realized in many different forms, and should not be construed
To be limited to this several illustrated embodiment.
Particular embodiments described above, the purpose of the present invention, technical scheme and beneficial effect are carried out further in detail
Describe in detail it is bright, should be understood that the foregoing is only the present invention specific embodiment, be not intended to limit the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., it should be included in the guarantor of the present invention
Within the scope of shield.
Claims (10)
1. one kind polishing liquid supply system, including：One accumulator tank, an output pipe, a return line, one first pipeline, one
One valve, a pH sensors and a controller；
Wherein, the accumulator tank is to an accommodating polishing fluid；The output pipe connects to be ground inside the accumulator tank with a chip
Polishing apparatus, to convey the polishing fluid to the chip grinding and polishing device；The return line connect inside the accumulator tank with
The chip grinding and polishing device, to receive the polishing fluid of the chip grinding and polishing device backflow；Storage described in first pipeline connection
Deposit inside groove with pH adjustment liquid sources of supply, liquid is adjusted to convey the pH of the pH adjustment liquid source of supply；First valve is set
It is placed on first pipeline, it is controlled and open or block first pipeline；The pH sensors are arranged at the storage
Inside groove, to sense the pH value of polishing fluid in the accumulator tank；The controller is electrically connected with first valve and the pH
Sensor, first valve is controlled according to the pH value that the pH sensors are sensed, makes the pH value of polishing fluid in the accumulator tank
Maintain a predetermined pH value range.
2. polishing liquid supply system according to claim 1, wherein, the polishing fluid includes oxidant and acidic chemical
Liquid.
3. polishing liquid supply system according to claim 1, wherein, the predetermined pH value range between 2~pH of pH 5 it
Between.
4. polishing liquid supply system according to claim 1, in addition to：One second pipeline, one second valve and an oxidation
Reduction potential sensor；
Wherein, accumulator tank inside described in second pipeline connection and an oxidant source of supply, are supplied to convey the oxidant
Ying Yuan oxidant；Second valve is arranged on second pipeline, controlled and open or block second pipeline, makes institute
The oxidant for stating oxidant source of supply delivers to accumulator tank or blocking oxide the agent injection accumulator tank；The redox electricity
Level sensor is arranged inside the accumulator tank, to sense the oxidation-reduction potential of polishing fluid in the accumulator tank；The control
Device processed is also electrically connected with second valve and the oxidation-reduction potential sensor, according to the oxidation-reduction potential sensor institute
Second valve described in the oxidation reduction potential control of sensing, making the oxidation-reduction potential of polishing fluid in the accumulator tank, to maintain one pre-
Determine more than current potential.
5. polishing liquid supply system according to claim 4, in addition to：One the 3rd pipeline, one the 3rd valve and a liquid level
Detector；
Wherein, described in the 3rd pipeline connection inside accumulator tank with a water source, be provided with the 3rd valve on the 3rd pipeline,
It is controlled and open or block the 3rd pipeline, the water at the water source is delivered to the accumulator tank or is blocked described in water injection
Accumulator tank；The liquid level detecting device is arranged inside the accumulator tank, to sense the liquid level in the accumulator tank；The control
Device is also electrically connected with the 3rd valve and the liquid level detecting device, described in the Liquid level detected according to the liquid level detecting device
The 3rd pipeline is opened or blocked to 3rd valve, the liquid level of polishing fluid in the accumulator tank is maintained at more than a predetermined fluid level.
6. polishing liquid supply system according to claim 5, in addition to：One heat-exchange tube and a temperature controller；
Wherein, the heat-exchange tube is connected to the temperature controller, pre- to control the temperature of polishing fluid in the accumulator tank to be maintained at
Constant temperature degree, avoid polishing fluid S temperature too high.
7. polishing liquid supply system according to claim 6, in addition to：One spectrometer, the spectrometer include：One light is detectd
Survey device, a light source and a main frame；
Wherein, the optical detector is arranged inside the accumulator tank, detects the absorptance of polishing fluid in the accumulator tank；It is described
The light of light source is transmitted in the accumulator tank and the polishing fluid that is irradiated in inside the accumulator tank through optical fiber；The main frame root
The absorbance range detected according to the optical detector is indicated, when the absorptance detected reaches a predetermined absorptance,
A prompting signal is sent, the prompting signal can transmit to loudspeaker or display, prompt more to renew in the form of sound or image
Polishing fluid.
8. the polishing liquid supply system according to any one of claim 1 to 7, wherein, it is provided with one on the output pipe
Draw-off pump, the draw-off pump is to extract the polishing fluid in the accumulator tank, to be delivered to the chip grinding and polishing device.
9. the polishing liquid supply system according to any one of claim 1 to 7, wherein, it is provided with one on the return line
The impurity in polishing fluid is recovered by filtration in filtration members, the filtration members.
10. the polishing liquid supply system according to any one of claim 1 to 7, wherein, the redox electricity of the polishing fluid
Position is more than 500mV.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW105124433 | 2016-08-02 | ||
| TW105124433A TWI641038B (en) | 2016-08-02 | 2016-08-02 | Polishing liquid supply system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107671732A true CN107671732A (en) | 2018-02-09 |
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ID=61133458
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710532812.4A Pending CN107671732A (en) | 2016-08-02 | 2017-07-03 | Polishing solution supply system |
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| Country | Link |
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| CN (1) | CN107671732A (en) |
| TW (1) | TWI641038B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108789163A (en) * | 2018-05-30 | 2018-11-13 | 郑州合晶硅材料有限公司 | A kind of silicon chip back side polishing device and polishing method |
| CN109623632A (en) * | 2018-12-24 | 2019-04-16 | 上海华力集成电路制造有限公司 | A kind of chemical-mechanical polishing system and its course of work |
| CN110936021A (en) * | 2019-12-25 | 2020-03-31 | 浙江工业大学 | Scanning type laser composite chemical polishing device and method |
| CN111015500A (en) * | 2019-12-27 | 2020-04-17 | 北京天科合达半导体股份有限公司 | Polishing solution circulating device and method for processing large-size wafer |
| CN111546214A (en) * | 2020-04-23 | 2020-08-18 | 福建晶安光电有限公司 | Dynamic replacement control method and system for slurry in semiconductor wafer processing |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115892A (en) * | 1994-10-14 | 1996-05-07 | Kurita Water Ind Ltd | Recovering method for abrasive grain |
| JP2000190222A (en) * | 1998-12-24 | 2000-07-11 | Sharp Corp | Grinding liquid feeding device |
| CN1688380A (en) * | 2002-07-19 | 2005-10-26 | 动力系统有限公司 | Method and apparatus for blending process materials |
| TW200732644A (en) * | 2005-10-25 | 2007-09-01 | Rohm & Haas | Dissolution test equipment and methods for testing having improved filtration system |
| CN102935618A (en) * | 2011-08-15 | 2013-02-20 | 中芯国际集成电路制造(上海)有限公司 | Grinding fluid, over-polishing and end point detection method and device and polishing device |
| TW201529487A (en) * | 2013-06-28 | 2015-08-01 | Panasonic Corp | Hydrogen peroxide-containing effluent treatment apparatus and treatment method |
| CN104979184A (en) * | 2011-10-07 | 2015-10-14 | 旭硝子株式会社 | Single-crystal silicon-carbide substrate and polishing solution |
| US20160175779A1 (en) * | 2014-12-22 | 2016-06-23 | PRO-Equipment, Inc. | High velocity cross flow dynamic membrane filter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015152021A1 (en) * | 2014-03-31 | 2015-10-08 | 株式会社ノリタケカンパニーリミテド | Method for polishing gan single crystal material |
-
2016
- 2016-08-02 TW TW105124433A patent/TWI641038B/en not_active IP Right Cessation
-
2017
- 2017-07-03 CN CN201710532812.4A patent/CN107671732A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08115892A (en) * | 1994-10-14 | 1996-05-07 | Kurita Water Ind Ltd | Recovering method for abrasive grain |
| JP2000190222A (en) * | 1998-12-24 | 2000-07-11 | Sharp Corp | Grinding liquid feeding device |
| CN1688380A (en) * | 2002-07-19 | 2005-10-26 | 动力系统有限公司 | Method and apparatus for blending process materials |
| TW200732644A (en) * | 2005-10-25 | 2007-09-01 | Rohm & Haas | Dissolution test equipment and methods for testing having improved filtration system |
| CN102935618A (en) * | 2011-08-15 | 2013-02-20 | 中芯国际集成电路制造(上海)有限公司 | Grinding fluid, over-polishing and end point detection method and device and polishing device |
| CN104979184A (en) * | 2011-10-07 | 2015-10-14 | 旭硝子株式会社 | Single-crystal silicon-carbide substrate and polishing solution |
| TW201529487A (en) * | 2013-06-28 | 2015-08-01 | Panasonic Corp | Hydrogen peroxide-containing effluent treatment apparatus and treatment method |
| US20160175779A1 (en) * | 2014-12-22 | 2016-06-23 | PRO-Equipment, Inc. | High velocity cross flow dynamic membrane filter |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108789163A (en) * | 2018-05-30 | 2018-11-13 | 郑州合晶硅材料有限公司 | A kind of silicon chip back side polishing device and polishing method |
| CN109623632A (en) * | 2018-12-24 | 2019-04-16 | 上海华力集成电路制造有限公司 | A kind of chemical-mechanical polishing system and its course of work |
| CN109623632B (en) * | 2018-12-24 | 2020-02-07 | 上海华力集成电路制造有限公司 | Chemical mechanical polishing system and working process thereof |
| CN110936021A (en) * | 2019-12-25 | 2020-03-31 | 浙江工业大学 | Scanning type laser composite chemical polishing device and method |
| CN110936021B (en) * | 2019-12-25 | 2023-12-19 | 浙江工业大学 | Scanning type laser composite chemical polishing device and method |
| CN111015500A (en) * | 2019-12-27 | 2020-04-17 | 北京天科合达半导体股份有限公司 | Polishing solution circulating device and method for processing large-size wafer |
| CN111546214A (en) * | 2020-04-23 | 2020-08-18 | 福建晶安光电有限公司 | Dynamic replacement control method and system for slurry in semiconductor wafer processing |
| CN111546214B (en) * | 2020-04-23 | 2022-04-22 | 福建晶安光电有限公司 | Dynamic replacement control method and system for slurry in semiconductor wafer processing |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI641038B (en) | 2018-11-11 |
| TW201806014A (en) | 2018-02-16 |
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