CN107660064A - Heat conductive insulating plate and preparation method thereof and electronic component - Google Patents
Heat conductive insulating plate and preparation method thereof and electronic component Download PDFInfo
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- CN107660064A CN107660064A CN201710911161.XA CN201710911161A CN107660064A CN 107660064 A CN107660064 A CN 107660064A CN 201710911161 A CN201710911161 A CN 201710911161A CN 107660064 A CN107660064 A CN 107660064A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0209—External configuration of printed circuit board adapted for heat dissipation, e.g. lay-out of conductors, coatings
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/06—Thermal details
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention relates to electronic circuit package matrix technique field, heat conductive insulating plate and preparation method thereof and electronic component are disclosed.A kind of heat conductive insulating plate, the heat conductive insulating plate include：Metal substrate (1), the oxide skin(coating) (2) stacked gradually formed on metal substrate (1) and the coating (3) containing silica.By the present invention in that being handled with Perhydropolysilazane solution, in the case of the insulating properties of no reduction heat conductive insulating plate, heat conductivility is greatly improved, heat conductive insulating plate of the invention has preferable insulating properties and thermal conductivity.
Description
Technical field
The present invention relates to electronic circuit package substrate field, and in particular to heat conductive insulating plate and preparation method thereof and electronics member
Device.
Background technology
High power, microminiaturization and the densification of electronic component turn into developing direction, and high heat-conductive characteristic turns into electronics
The integrated big problem of component.High density electronic component during work can produce substantial amounts of heat, show if heat accumulation occurs
As can then make high density electronic component service behaviour reduce or even damage and accident occurs.Therefore, high density electronic component
Assembling needs the substrate of high heat conduction to meet its working condition at full capacity.
The substrate of high heat conduction such as ceramic substrate and aluminium base are applied to the assembling of high density electronic component.Ceramic substrate has
There is fragility feature, at work cracking and breakage problem under caused awfully hot circulation impact effect.And for aluminum metal-matrix
It is that organic polymer or resinae are coated on substrate as coating mostly for substrate, reduction metal substrate that so can be serious
Heat conductivility, and organic polymer or resin type coating work long hours under thermal environment and aging phenomenon occur, cause
Heat conductivility seriously reduces, so as to further reduce the performance of device.
CN104559061A discloses a kind of high heat conductive insulating carbon system filler and high heat conductive insulating epoxy resin composite material
Preparation method, it is to be modified graphene, graphite powder or carbon fiber powder by the insulation such as tetraethyl orthosilicate or positive butyl titanate
Agent is modified, and is added in epoxy resin, hot-forming solidification obtains insulated rubber film, and the glued membrane is mixed with high thermal conductivity coefficient carbon
Based material, the glued membrane that thermal conductivity factor is 2.7~3.2W/mK is also only obtained, and the material that it is mixed is conductive
The insulating properties of material can be had an impact by the carbon-based material of energy.
The content of the invention
The invention aims to overcome heat-conducting substrate existing for prior art to take into account heat conductivility and insulating properties
Can, and the problem of heat conductivility has much room for improvement, there is provided heat conductive insulating plate and preparation method thereof and electronic component, it is of the invention
Heat conductive insulating plate, in the case of no reduction insulating properties, heat conductivility is greatly improved, there is preferable insulating properties and lead
It is hot.
To achieve these goals, first aspect present invention provides a kind of heat conductive insulating plate, wherein, the heat conductive insulating plate
Including：Metal substrate 1, the oxide skin(coating) 2 stacked gradually formed on metal substrate 1 and the coating 3 containing silica.
Second aspect of the present invention provides the preparation method of above-mentioned heat conductive insulating plate, wherein, this method includes following step
Suddenly：
(A) oxide skin(coating) 2 is formed on metal substrate 1；
(B) Perhydropolysilazane solution is coated with oxide skin(coating) 2, is then solidified, is formed containing silica
Coating 3.
Third aspect present invention provides a kind of electronic component, wherein, it is exhausted that the electronic component includes above-mentioned heat conduction
Listrium.
In the present invention, by being coated with Perhydropolysilazane solution, the coating containing silica of formation causes heat conduction
Insulation board has good insulating properties and heat conductivility, and dc breakdown voltage can reach 1500V-2500V, thermal conductivity factor energy
It is enough to improve to 20W/mK-40W/mK, preferably 25W/mK-35W/mK.
Brief description of the drawings
Fig. 1 is the schematic diagram of the heat conductive insulating plate of the present invention.
Description of reference numerals
1st, metal substrate 2, oxide skin(coating)
3rd, the coating containing silica
Embodiment
The end points of disclosed scope and any value are not limited to the accurate scope or value herein, these scopes or
Value should be understood to comprising the value close to these scopes or value.For number range, between the endpoint value of each scope, respectively
It can be combined with each other between the endpoint value of individual scope and single point value, and individually between point value and obtain one or more
New number range, these number ranges should be considered as specific open herein.
First aspect present invention provides a kind of heat conductive insulating plate, as shown in figure 1, the heat conductive insulating plate includes：Metal Substrate
Plate 1, the oxide skin(coating) 2 stacked gradually formed on metal substrate 1 and the coating 3 containing silica.
In the present invention, the coating 3 containing silica can contain but be not limited to：Silica and optional nothing
Machine thing, the inorganic matter can be silica, aluminum oxide, magnesia, zinc oxide, boron nitride, aluminium nitride, silicon nitride and carborundum
In one or more.
In the present invention, the thickness of the coating 3 containing silica can be 100nm-100 μm, be preferably
300nm-50μm。
In the present invention, the metal substrate 1 can be selected from aluminium sheet, aluminium alloy plate, copper coin, copper alloy plate, steel plate, stainless
Steel plate or zine plate.In the present invention, it is contemplated that cost of material, preferably using the aluminium sheet of relative low price.
In the present invention, the thickness of the metal substrate 1 can be selected as needed, it is contemplated that financial cost, example
Such as can be 500 μm of -2mm.
In the present invention, the oxide skin(coating) 2 can contain but be not limited to：Aluminum oxide, silica, magnesia, iron oxide,
One or more in cupric oxide, manganese oxide, chromium oxide, zinc oxide and titanium oxide.
In the present invention, the thickness of the oxide skin(coating) 2 can be 500nm-100 μm.
Second aspect of the present invention provides the preparation method of above-mentioned heat conductive insulating plate, wherein, this method includes following step
Suddenly：
(A) oxide skin(coating) 2 is formed on metal substrate 1；
(B) Perhydropolysilazane solution is coated with oxide skin(coating) 2, is then solidified, is formed containing silica
Coating 3.
The method according to the invention, in step (A), the method for forming oxide skin(coating) 2 can be selected from, but not limited to,：
One kind in anodizing, micro-arc oxidation, hot water oxidizing process, sol-gal process, acidleach deactivation method and alkali leaching deactivation method.Institute
Method is stated as the conventional method in this area, will not be repeated here.
The method according to the invention, in step (B), the Perhydropolysilazane solution includes Perhydropolysilazane, molten
Agent, initiator, and optional dimethyl silicone polymer and/or inorganic matter.
The solvent can be but be not limited to：N-butyl ether or dichloromethane.
The initiator can be but be not limited to：N- normal-butyl-N- methylethanolamines, methylethanolamine, N- butyl diethyls
Hydramine, monoethanolamine or diethanol amine.
The inorganic matter can be nano aluminium oxide, nano silicon oxide, nano magnesia, nano zine oxide, nano silicon nitride
One or more in boron, nano aluminum nitride, nano-silicon nitride and nanometer silicon carbide.Inorganic matter can also increase the thickness of film.
After solidification, Perhydropolysilazane is changed into silica, and solvent volatilization is not present, and initiator content is relatively low and easy decomposition, gathers
Dimethyl siloxane is changed into silica, and inorganic matter is still inorganic matter.
The method according to the invention, Perhydropolysilazane, solvent, initiator, dimethyl silicone polymer and inorganic matter it is mixed
Composition and division in a proportion example, for the purpose of the Perhydropolysilazane solution for ensureing to obtain can be coated, such as solid matter is more, will be unable to
It is coated.Perhydropolysilazane, solvent, initiator, the charged material weight ratio of dimethyl silicone polymer and inorganic matter can be
0.8：(1-5)：(0.1-2)：(0-6)：(0-4)；Preferably 0.8：(1-3)：(0.1-1)：(0-4)：(0-4).For example, per 4g
Perhydropolysilazane (solid content is 20 weight %) and 2g n-butyl ethers, 0.36g N- normal-butyl-N- methylethanolamines, 1g poly- two
Methylsiloxane, 0.56g nano silicon oxides, 2g nano magnesias are mixed, and obtain Perhydropolysilazane solution.Use poly- two
Methylsiloxane and inorganic matter can increase certain thickness.
The method according to the invention, in step (B), the method for the coating can be selected from, but not limited to,：Spin-coating method, leaching
Coating, spraying process, silk screen print method, ink-jet printing process, scraper for coating method, print roll coating method, slope flow coat cloth method and dropping curtain coating
One kind in method, preferably slope flow coat cloth method or dropping curtain rubbing method.The above method is the conventional method in this area, no longer superfluous herein
State.
The method according to the invention, the curing can be but be not limited to：Ultraviolet irradiation solidification method or moisture cure
Method.
The method according to the invention, the condition of the Ultraviolet irradiation method can include：Ultraviolet wavelength is 365nm, irradiation
Time is 5min-360min, irradiation power 0.4kW-1.7kW.Preferably, the atmosphere of the ultraviolet irradiation curing process is sky
Gas, nitrogen, oxygen, argon gas or helium, preferably nitrogen.
The method according to the invention, the condition of the moisture cure method can include：Steam temperature is 250-350 DEG C, wet
Spend for 30-85%, hardening time 30-600min.
Third aspect present invention provides a kind of electronic component, wherein, it is exhausted that the electronic component includes above-mentioned heat conduction
Listrium.For example, using above-mentioned heat conductive insulating plate as carrier substrate, with resistance, capacitor, potentiometer, electron tube, radiator etc.
Assembled, form electronic component.
The present invention will be described in detail by way of examples below.
In example 1 below, Perhydropolysilazane is purchased from UK corporation, and solid content is 20 weight %.
Nano aluminium oxide is purchased from Sigma, particle diameter distribution 20-30nm.
Nano silicon oxide is purchased from Sigma, particle diameter distribution 15-45nm.
N- normal-butyl-N- methylethanolamines are purchased from lark prestige company, purity more than 96%.
Monoethanolamine is purchased from lark prestige company, purity more than 99%.
Diethanol amine is purchased from lark prestige company, purity more than 99%.
Dimethyl silicone polymer is purchased from lark prestige company, purity more than 97%.
N-butyl ether is purchased from company of Sa En chemical technologies Co., Ltd, and analysis is pure.
Dichloromethane is purchased from lark prestige company, and analysis is pure.
Preparation example 1
By 4g Perhydropolysilazanes (solid content is 20 weight %), 2g n-butyl ethers, 0.36g N- normal-butyl-N- methyl second
Hydramine, 1g dimethyl silicone polymers, 0.56g nano silicon oxides and 2g nano magnesias are mixed, and Perhydropolysilazane is made
Solution 1.
Preparation example 2
By 4g Perhydropolysilazanes (solid content is 20 weight %), 5g dichloromethane, 0.44g diethanol amine and 4g nano oxygens
SiClx is mixed, and Perhydropolysilazane solution 2 is made.
Preparation example 3
By 4g Perhydropolysilazanes (solid content is 20 weight %), 1g n-butyl ethers, 0.51g monoethanolamines and 1g poly dimethyl silicon
Oxygen alkane and mixed, Perhydropolysilazane solution 3 is made.
Preparation example 4
By 4g Perhydropolysilazanes (solid content is 20 weight %), 2g n-butyl ethers and 0.36g N- normal-butyl-N- methyl second
Hydramine is mixed, and Perhydropolysilazane solution 4 is made.
Embodiment 1
Prepare 10cm (length) × 20cm (width) × 2mm (thickness) flat aluminium sheet, aluminium sheet is placed in molten containing 0.2M oxalic acid
Anodic oxidation is carried out in the anodic oxidation pond of liquid, 240min is aoxidized in 10 DEG C of thermostats, to form the oxide skin(coating) of 20 μ m thicks.
Using slope flow coat cloth method, Perhydropolysilazane solution 1 (preparation example 1 obtains) is coated with the oxide layer, after surface drying,
It is sent under the ultraviolet that wavelength is 365nm, irradiation power 1.2kW, ultraviolet irradiation processing 60min, forms 50 μm under blanket of nitrogen
The coating containing silica of thickness.Heat conductive insulating plate is obtained, as described in Figure 1.
By the heat conductive insulating plate, according to ASTM D5470 stable state heat flow methods, boundary material thermal resistance and the coefficient of heat conduction are used
Measurement apparatus (Taiwan Rui Ling companies produce, model LW-9389), the thermal conductivity factor for measuring the heat conductive insulating plate is 25.7W/
m·K。
According to GB/T 1408-2006 standards, using electric dielectric test instrument, (Beijing hat, which surveys smart power utilization instrument device, to be had
Limit company produces, model DDJ-10KV) to be tested, the minimum disruptive voltage for measuring the heat conductive insulating plate is 2500V.
Embodiment 2
Prepare 10cm (length) × 20cm (width) × 2mm (thickness) flat aluminium sheet, it is 10.0/ that aluminium sheet, which is placed in containing concentration,
2.0g/L Na3PO4Differential arc oxidation is carried out in the differential arc oxidation oxidation trough of/NaOH electrolyte, in current density 10A/dm2Lower oxygen
Change 30min, to form the oxide skin(coating) of 25 μ m thicks.
Using dropping curtain rubbing method, Perhydropolysilazane solution 2 (preparation example 2 obtains) is coated with the oxide layer, after surface drying,
It is sent under the ultraviolet that wavelength is 365nm, irradiation power 1.7kW, ultraviolet irradiation processing 40min, forms 30 μm under air atmosphere
The coating containing silica of thickness.Obtain heat conductive insulating plate.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 27.6W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 2300V.
Embodiment 3
Prepare 10cm (length) × 20cm (width) × 2mm (thickness) flat aluminium alloy plate, aluminium alloy plate is placed in 75 DEG C
In ionized water, constant temperature immersion 20min, the oxide skin(coating) of 200nm thickness is obtained.
Using spin-coating method, Perhydropolysilazane solution 3 (preparation example 3 obtains) is coated with the oxide layer, after surface drying,
300 DEG C, humidity be 50% steam in, solidify 30min, formed 500nm thickness the coating containing silica.Obtain heat conduction
Insulation board.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 29.5W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 1500V.
Embodiment 4
Prepare 10cm (length) × 20cm (width) × 2mm (thickness) flat steel plate, iron plate is placed in cold concentrated nitric acid, soaked
10min is steeped, obtains the oxide skin(coating) of 500nm thickness.
Using print roll coating method, Perhydropolysilazane solution 4 (preparation example 4 obtains) is coated with the oxide layer, after surface drying,
It is sent under the ultraviolet that wavelength is 365nm, operating power 1.5kW, ultraviolet irradiation processing 30min, obtains 100 μm under oxygen atmosphere
The coating containing silica of thickness.Obtain heat conductive insulating plate.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 29.1W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 1700V.
Embodiment 5
Prepare the aluminium sheet of 10cm (length) × 20cm (width) × 500 μm (thickness), aluminium sheet is placed in 0.5M sodium hydroxide boiling water
In, continuously boil and dried at 2 hours, 150 DEG C, obtain the oxide skin(coating) of 100 μ m thicks.
Using dip coating, Perhydropolysilazane solution 1 (preparation example 1 obtains) is coated with the oxide layer, after surface drying, be sent into
Wavelength is operating power 1.5kW under 365nm ultraviolet, and ultraviolet irradiation processing 30min, obtains 30 μ m thicks under oxygen atmosphere
The coating containing silica.Obtain heat conductive insulating plate.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 28.1W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 1800V.
Embodiment 6
Prepare 10cm (length) × 20cm (width) × 1mm (thickness) flat stainless steel plate, the titanium that stainless steel plate is placed in is molten
In glue (content is 20 weight %, colloid diameter 30nm), 20min is soaked, obtains the oxide of 10 μ m thicks.
Using dip coating, Perhydropolysilazane solution 1 (preparation example 1 obtains) is coated with the oxide layer, after surface drying, be sent into
Wavelength is operating power 0.4kW under 365nm ultraviolet, and ultraviolet irradiation processing 30min, obtains 5 μ m thicks under oxygen atmosphere
Coating containing silica.Obtain heat conductive insulating plate.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 27.2W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 2120V.
Comparative example 1
Prepare 10cm (length) × 20cm (width) × 2mm (thickness) flat aluminium sheet, aluminium sheet is placed in molten containing 0.2M oxalic acid
Anodic oxidation is carried out in the anodic oxidation pond of liquid, 240min is aoxidized in 10 DEG C of thermostats, to form the oxide skin(coating) of 20 μ m thicks.
Obtain heat conductive insulating plate.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 29.8W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 220V.
Comparative example 2
Conventional Jun Xin aluminium bases Co., Ltd of the Shenzhen pcb board (printed circuit board (PCB)) of market purchasing, the substrate use
The type high heat conduction aluminium of Taiwan 1060, copper foil covered above aluminium, the thickness of copper foil layer is 35 μm -280 μm.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 1.4-1.6W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 3000V.
Comparative example 3
Conventional moral subelectron Science and Technology Ltd. of the Shenzhen FR4 substrates (glass cloth substrate) of market purchasing, in glass
Epoxy resin is covered above cloth, the thickness of the substrate is 0.3mm-3.2mm.
According to the method for embodiment 1, the thermal conductivity factor for measuring the heat conductive insulating plate is 2W/mK.
According to the method for embodiment 1, the minimum disruptive voltage for measuring the heat conductive insulating plate is 480V-5120V.
It can be seen that by the result of embodiment and comparative example and contain by the present invention in that being formed with Perhydropolysilazane solution
There is the coating of silica, and form oxide skin(coating), the heat conductive insulating plate of preparation has higher insulating properties, breakdown minimum
Voltage is 1500V-2500V, but also greatly improves heat conductivility, compared with the substrate that in the market is commonly used, thermal conductivity factor energy
It is enough to be promoted to more than 25W/mK from 2W/mK.The heat conductive insulating plate of the present invention has preferable insulating properties and heat conductivility concurrently.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, still, the present invention is not limited thereto.At this
In the range of the technology design of invention, a variety of simple variants, including each technical characteristic can be carried out to technical scheme
It is combined with any other suitable method, these simple variants and combination should equally be considered as in disclosed in this invention
Hold, belong to protection scope of the present invention.
Claims (10)
1. a kind of heat conductive insulating plate, it is characterised in that the heat conductive insulating plate includes：Metal substrate (1), on metal substrate (1)
The oxide skin(coating) (2) stacked gradually formed and the coating (3) containing silica.
2. heat conductive insulating plate according to claim 1, wherein, the coating (3) containing silica contains titanium dioxide
Silicon and optional inorganic matter, the inorganic matter are selected from silica, aluminum oxide, magnesia, zinc oxide, boron nitride, aluminium nitride, nitridation
One or more in silicon and carborundum；
Preferably, the thickness of the coating (3) containing silica is 100nm-100 μm, preferably 300nm-50 μm.
3. heat conductive insulating plate according to claim 1, wherein, the metal substrate (1) is selected from aluminium sheet, aluminium alloy plate, copper
Plate, copper alloy plate, steel plate, stainless steel plate or zine plate；
Preferably, the thickness of the metal substrate (1) is 500 μm of -2mm.
4. heat conductive insulating plate according to claim 1, wherein, the oxide skin(coating) (2) contains aluminum oxide, silica, oxygen
Change the one or more in magnesium, iron oxide, cupric oxide, manganese oxide, chromium oxide, zinc oxide and titanium oxide；
Preferably, the thickness of the oxide skin(coating) (2) is 500nm-100 μm.
5. the preparation method of the heat conductive insulating plate in claim 1-4 described in any one, wherein, this method includes following step
Suddenly：
(A) oxide skin(coating) (2) is formed on metal substrate (1)；
(B) Perhydropolysilazane solution is coated with oxide skin(coating) (2), is then solidified, forms the painting containing silica
Layer (3).
6. according to the method for claim 5, wherein, in step (A), the method for forming oxide skin(coating) (2) is selected from
One kind in anodizing, micro-arc oxidation, hot water oxidizing process, sol-gal process, acidleach deactivation method and alkali leaching deactivation method.
7. according to the method for claim 5, wherein, in step (B), the Perhydropolysilazane solution gathers including perhydro
Silazane, solvent, initiator, and optional dimethyl silicone polymer and/or inorganic matter；
Preferably, the solvent is n-butyl ether and/or dichloromethane；
Preferably, the initiator is N- normal-butyl-N- methylethanolamines, methylethanolamine, N butyl diethanol amine, monoethanolamine
Or diethanol amine；
Preferably, the inorganic matter is selected from nano aluminium oxide, nano silicon oxide, nano magnesia, nano zine oxide, nano silicon nitride
One or more in boron, nano aluminum nitride, nano-silicon nitride and nanometer silicon carbide；
Preferably, the charged material weight ratio of the Perhydropolysilazane, solvent, initiator, dimethyl silicone polymer and inorganic matter is
0.8：(1-5)：(0.1-2)：(0-6)：(0-4)；Preferably 0.8：(1-3)：(0.1-1)：(0-4)：(0-4).
8. according to the method for claim 5, wherein, in step (B), the method for the coating is selected from spin-coating method, dip-coating
Method, spraying process, silk screen print method, ink-jet printing process, scraper for coating method, print roll coating method, slope flow coat cloth method and dropping curtain rubbing method
In one kind, preferably slope flow coat cloth method or dropping curtain rubbing method.
9. according to the method for claim 5, wherein, the curing is ultraviolet irradiation solidification method or moisture cure method；
Preferably, the condition of the Ultraviolet irradiation method includes：Ultraviolet wavelength is 365nm, exposure time 5min-360min,
Irradiation power is 0.4kW-1.7kW；Preferably, the atmosphere of the ultraviolet irradiation curing process is air, nitrogen, oxygen, argon gas
Or helium, preferably nitrogen；
Preferably；The condition of the moisture cure method includes：Steam temperature is 250-350 DEG C, humidity 30-85%, during solidification
Between be 30-600min.
10. a kind of electronic component, wherein, the heat conduction that the electronic component is included in claim 1-4 described in any one is exhausted
Listrium.
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| CN201710911161.XA CN107660064B (en) | 2017-09-29 | 2017-09-29 | Heat-conducting insulating plate, preparation method thereof and electronic component |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256449A (en) * | 2018-09-20 | 2019-01-22 | 湖南源创高科工业技术有限公司 | A kind of LED substrate |
| CN115537786A (en) * | 2022-10-31 | 2022-12-30 | 中国科学院高能物理研究所 | Insulating layer and preparation method thereof |
| CN115613013A (en) * | 2022-10-31 | 2023-01-17 | 中国科学院化学研究所 | Composite insulating layer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101287335A (en) * | 2007-04-12 | 2008-10-15 | 环宇真空科技股份有限公司 | Highly heat conductive circuit base board |
| CN101919320A (en) * | 2007-08-08 | 2010-12-15 | Ain株式会社 | Method for producing wiring board and wiring board |
| JP5547032B2 (en) * | 2010-10-21 | 2014-07-09 | パナソニック株式会社 | Thermally conductive resin composition, resin sheet, prepreg, metal laminate and printed wiring board |
| CN104885204A (en) * | 2012-11-22 | 2015-09-02 | Az电子材料（卢森堡）有限公司 | Method for forming of siliceous film and siliceous film formed using same |
-
2017
- 2017-09-29 CN CN201710911161.XA patent/CN107660064B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101287335A (en) * | 2007-04-12 | 2008-10-15 | 环宇真空科技股份有限公司 | Highly heat conductive circuit base board |
| CN101919320A (en) * | 2007-08-08 | 2010-12-15 | Ain株式会社 | Method for producing wiring board and wiring board |
| JP5547032B2 (en) * | 2010-10-21 | 2014-07-09 | パナソニック株式会社 | Thermally conductive resin composition, resin sheet, prepreg, metal laminate and printed wiring board |
| CN104885204A (en) * | 2012-11-22 | 2015-09-02 | Az电子材料（卢森堡）有限公司 | Method for forming of siliceous film and siliceous film formed using same |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109256449A (en) * | 2018-09-20 | 2019-01-22 | 湖南源创高科工业技术有限公司 | A kind of LED substrate |
| CN115537786A (en) * | 2022-10-31 | 2022-12-30 | 中国科学院高能物理研究所 | Insulating layer and preparation method thereof |
| CN115613013A (en) * | 2022-10-31 | 2023-01-17 | 中国科学院化学研究所 | Composite insulating layer and preparation method thereof |
| CN115613013B (en) * | 2022-10-31 | 2024-06-04 | 中国科学院化学研究所 | Composite insulating layer and preparation method thereof |
| CN115537786B (en) * | 2022-10-31 | 2024-06-04 | 中国科学院高能物理研究所 | Insulating layer and preparation method thereof |
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| CN107660064B (en) | 2020-06-05 |
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