CN107634642A - A kind of power isolation circuit and electric supply installation - Google Patents
A kind of power isolation circuit and electric supply installation Download PDFInfo
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- CN107634642A CN107634642A CN201711105864.XA CN201711105864A CN107634642A CN 107634642 A CN107634642 A CN 107634642A CN 201711105864 A CN201711105864 A CN 201711105864A CN 107634642 A CN107634642 A CN 107634642A
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Abstract
The embodiment of the present invention proposes a kind of power isolation circuit and electric supply installation, is related to power supply technique field.The power isolation circuit includes control circuit and metal-oxide-semiconductor, control circuit electrically connects with metal-oxide-semiconductor, the input of metal-oxide-semiconductor, control circuit with a power electric connection, the output end of metal-oxide-semiconductor electrically connects with a load, and control circuit is on for the voltage control metal-oxide-semiconductor of the output end according to metal-oxide-semiconductor or cut-off state.Invent the power isolation circuit provided has the advantages of loss during conducting is small, the efficiency high of power supply with electric supply installation.
Description
Technical field
The present invention relates to power supply technique field, in particular to a kind of power isolation circuit and electric supply installation.
Background technology
With the rapid development of science and technology, semicon industry development is also advanced by leaps and bounds, in the last few years the collection of semiconductor
Cheng Du also more and more highers, chip fabricators in order to reduce chip power-consumption, the operating voltage of chip is done as far as possible it is low, simultaneously
For the electric current for needing to provide with regard to bigger, the electric current for comparatively speaking just needing power supply to provide is increasing.
So generally worked at present using more power sources in parallel, so as to be chip power supply.Powered in more power sources in parallel
When, if wherein a power source internal breaks down, the point of other power supplys can pour in down a chimney into the trouble power.In order to prevent pouring in down a chimney
Situation generation, generally prevented at present using at each power supply rear a diode is connect using the unilateral conduction of diode
The generation of situation about pouring in down a chimney.
But when being isolated using diode, because diode pressure drop itself is about 0.7V, so diode is led
Loss when logical is universal higher, so that power supply is less efficient.
How to solve the above problems, be the emphasis of those skilled in the art's concern.
The content of the invention
In view of this, it is an object of the invention to provide a kind of power isolation circuit, to solve when carrying out isolated from power
The problem of larger is lost.
It is larger to solve to be lost when carrying out isolated from power another object of the present invention is to provide a kind of electric supply installation
Problem.
To achieve these goals, the technical scheme that the embodiment of the present invention uses is as follows：
On the one hand, the embodiments of the invention provide a kind of power isolation circuit, the power isolation circuit includes control electricity
Road and metal-oxide-semiconductor, the control circuit are electrically connected with the metal-oxide-semiconductor, and the input of the metal-oxide-semiconductor, the control circuit are used to
With a power electric connection, the output end of the metal-oxide-semiconductor is used to electrically connect with a load, and the control circuit is used for according to described in
The voltage control metal-oxide-semiconductor of the output end of metal-oxide-semiconductor is on or cut-off state.
Further, the control circuit includes voltage stabilizing element and the first triode, the voltage stabilizing element and the metal-oxide-semiconductor
Output end electrical connection, and the voltage stabilizing element electrically connects with the base stage of first triode, the collection of first triode
Electrode electrically connects with the grid of the metal-oxide-semiconductor, the grounded emitter of first triode, and the voltage stabilizing element is used for when described
When the voltage of the output end of metal-oxide-semiconductor is more than presetting threshold voltage, first triode ON is controlled, so that the MOS
Pipe is in cut-off state, and the voltage stabilizing element is additionally operable to the voltage when the output end of the metal-oxide-semiconductor less than or equal to presetting
During threshold voltage, first triode is controlled to disconnect, so that the metal-oxide-semiconductor is in the conduction state.
Further, the voltage stabilizing element includes benchmark voltage-stablizer, reference pole and the metal-oxide-semiconductor of the benchmark voltage-stablizer
Output end electrical connection, the negative electrode of the benchmark voltage-stablizer electrically connects with the base stage of first triode, the benchmark voltage stabilizing
The plus earth of device.
Further, the control circuit also includes partial pressure component, the ginseng of the partial pressure component and the benchmark voltage-stablizer
Pole electrical connection is examined, and the output end of the metal-oxide-semiconductor is grounded by the partial pressure component.
Further, the partial pressure component includes first resistor and second resistance, one end of the first resistor with it is described
The output end electrical connection of metal-oxide-semiconductor, the other end of the first resistor reference pole with the benchmark voltage-stablizer, described second respectively
One end electrical connection of resistance, the other end ground connection of the second resistance, the resistance of the first resistor and the second resistance are
The resistance of default certainty ratio.
Further, the control circuit also includes compensating electric capacity, one end of the compensating electric capacity and the benchmark voltage stabilizing
The reference pole electrical connection of device, the other end of the compensating electric capacity electrically connect with the negative electrode of the benchmark voltage-stablizer.
Further, the power isolation circuit also includes power protecting circuit, the power protecting circuit respectively with institute
Control circuit electrical connection is stated, and the power protecting circuit is used for and the power electric connection.
Further, the quantity of the metal-oxide-semiconductor is two.
Further, the metal-oxide-semiconductor is N-channel MOS pipe or P-channel metal-oxide-semiconductor.
Second aspect, present invention also offers a kind of electric supply installation, the electric supply installation include multiple power supplys with it is described
Number of power sources identical power isolation circuit, the power isolation circuit include control circuit and metal-oxide-semiconductor, the control circuit with
The metal-oxide-semiconductor electrical connection, the input of the metal-oxide-semiconductor, the control circuit are used to and a power electric connection, the metal-oxide-semiconductor
Output end be used for one load electrically connect, the control circuit be used for according to the metal-oxide-semiconductor output end voltage control institute
State metal-oxide-semiconductor to be on or cut-off state, each power supply electrically connects with a power isolation circuit, and each institute
The output end for stating power isolation circuit electrically connects with identical load.
Compared with the prior art, the invention has the advantages that：
The invention provides a kind of power isolation circuit and electric supply installation, the power isolation circuit include control circuit with
Metal-oxide-semiconductor, control circuit are electrically connected with metal-oxide-semiconductor, and the voltage control metal-oxide-semiconductor that control circuit is used for the output end according to metal-oxide-semiconductor is in
On or off state.Because in the present invention, control circuit can control metal-oxide-semiconductor according to the voltage of the output end of metal-oxide-semiconductor
State, i.e., when power supply pours in down a chimney, control circuit can control metal-oxide-semiconductor to be in cut-off state, and power supply is prevented so as to reach
The generation of situation about pouring in down a chimney.Simultaneously as internal resistance is about 0.35m Ω when metal-oxide-semiconductor turns on so that pressure of the metal-oxide-semiconductor in conducting
Drop it is smaller so that metal-oxide-semiconductor conducting when loss it is smaller, power supply it is more efficient.
To enable the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by embodiment it is required use it is attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this
A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 shows the connection block diagram for the power isolation circuit that one embodiment of the present of invention provides.
Fig. 2 shows the circuit diagram for the power isolation circuit that one embodiment of the present of invention provides.
Fig. 3 shows the connection block diagram for the electric supply installation that another embodiment of the present invention provides.
Fig. 4 shows the power supply of another embodiment of the present invention offer and the connection block diagram of power isolation circuit.
Icon：100- power isolation circuits；110- control circuits；111- benchmark voltage-stablizers；The triodes of 112- first；113-
Partial pressure component；1131- first resistors；1132- second resistances；114- compensating electric capacities；120-MOS is managed；130- power protecting circuits；
200- electric supply installations；210- power supplys.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
Part of the embodiment of the present invention, rather than whole embodiments.The present invention implementation being generally described and illustrated herein in the accompanying drawings
The component of example can be configured to arrange and design with a variety of.
Below in conjunction with accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Generally exist
The component of the embodiment of the present invention described and illustrated in accompanying drawing can be configured to arrange and design with a variety of herein.Cause
This, the detailed description of the embodiments of the invention to providing in the accompanying drawings is not intended to limit claimed invention below
Scope, but it is merely representative of the selected embodiment of the present invention.Based on embodiments of the invention, those skilled in the art are not doing
The every other embodiment obtained on the premise of going out creative work, belongs to the scope of protection of the invention.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent accompanying drawing in individual accompanying drawing.Meanwhile the present invention's
In description, it is also necessary to explanation, unless otherwise clearly defined and limited, term " connected ", " connection " should be interpreted broadly,
For example, it may be being fixedly connected or being detachably connected, or it is integrally connected；Can be mechanical connection or electricity
Connection；Can be joined directly together, can also be indirectly connected by intermediary, can be the connection of two element internals.For
For one of ordinary skill in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.Tie below
Accompanying drawing is closed, some embodiments of the present invention are elaborated.In the case where not conflicting, following embodiment and embodiment
In feature can be mutually combined.
Fig. 1 is refer to, the embodiments of the invention provide a kind of power isolation circuit 100, the power isolation circuit 100 includes
Power protecting circuit 130, control circuit 110 and metal-oxide-semiconductor 120, power protecting circuit 130, control circuit 110 and metal-oxide-semiconductor
120 are sequentially connected electrically, and the input of power protecting circuit 130, control circuit 110 and metal-oxide-semiconductor 120 is electrically connected with a power supply
Connect, the output end of metal-oxide-semiconductor 120 electrically connects with load.Control circuit 110 is used for the voltage control of the output end according to metal-oxide-semiconductor 120
Metal-oxide-semiconductor 120 is on or cut-off state, and when metal-oxide-semiconductor 120 is in the conduction state, power supply is load supplying.
Specifically, referring to Fig. 2, in the present embodiment, control circuit 110 include voltage stabilizing element, the first triode 112 with
And partial pressure component 113, wherein, voltage stabilizing element electrically connects with the output end of metal-oxide-semiconductor 120, and voltage stabilizing element and the first triode 112
Base stage electrical connection, the colelctor electrode of the first triode 112 electrically connects with the grid of metal-oxide-semiconductor 120, the transmitting of the first triode 112
Pole is grounded, and partial pressure component 113 is electrically connected with voltage stabilizing element, and the output end of metal-oxide-semiconductor 120 is grounded by partial pressure component 113.
In the present embodiment, voltage stabilizing element uses benchmark voltage-stablizer 111, benchmark voltage-stablizer 111 include negative electrode, anode and
With reference to pole, the reference pole of wherein benchmark voltage-stablizer 111 electrically connects with the output end of metal-oxide-semiconductor 120, the negative electrode of benchmark voltage-stablizer 111
Electrically connected with the base stage of the first triode 112, the plus earth of benchmark voltage-stablizer 111.Of course, in some other embodiments
In, other voltage stabilizing elements can be also used, the present embodiment does not do any restriction to this.
Further, the model TL431 for the benchmark voltage-stablizer 111 that the present embodiment provides, its concrete operating principle is, when
When the voltage flowed through with reference to pole is more than the benchmark voltage-stablizer 111 presetting threshold voltage, that is, the voltage flowed through with reference to pole is more than
During the reference voltage of the benchmark voltage-stablizer 111, leakage current can be produced between the negative electrode and anode of benchmark voltage-stablizer 111.It is general next
The reference voltage containing a 2.5V inside TL431 type benchmark voltage-stablizer 111 is said, i.e., the voltage that ought be flowed through with reference to pole is more than 2.5V
When, produce leakage current between negative electrode and anode and flow into the base stage of the first triode 112, so that the first triode 112 turns on,
After the first triode 112 turns on, electric current can be flowed through to emitter stage from the colelctor electrode of the first triode 112 so that no current stream
The base stage of metal-oxide-semiconductor 120 is crossed, so that metal-oxide-semiconductor 120 is in cut-off state.
Because the power supply that the present embodiment provides is 12.7V, and the internal resistance due to metal-oxide-semiconductor 120 at work is smaller, so
During 120 normally of metal-oxide-semiconductor, its output voltage is also about 12.7V, if so directly by the reference pole of benchmark voltage-stablizer 111
Electrically connected with the output end of metal-oxide-semiconductor 120, then can not make and compare.In view of this, in the present embodiment, in order that metal-oxide-semiconductor 120
Compared with the voltage of output end is made with the reference voltage of benchmark voltage-stablizer 111, control circuit 110 includes partial pressure component 113.
Specifically, partial pressure component 113 includes first resistor 1131 and second resistance 1132, one end of first resistor 1131 with
The output end electrical connection of metal-oxide-semiconductor 120, the other end of first resistor 1131 reference the pole with benchmark voltage-stablizer 111, second electric respectively
One end electrical connection of resistance 1132, the other end ground connection of second resistance 1132.Also, first resistor 1131 and second resistance 1132
Resistance is the resistance of default certainty ratio.In order that in 120 normally of metal-oxide-semiconductor, the reference pole of benchmark voltage-stablizer 111 is flowed through
Voltage is identical with the reference voltage of benchmark voltage-stablizer 111, and the present embodiment and the ratio that sets is 41:1.Further, this implementation
The first resistor 1131 that example provides is 8.2K Ω, and the resistance of second resistance 1132 is 2K Ω, certain, in some other implementations
In example, partial pressure component 113 may include more elements, and because the voltage stabilized range of benchmark voltage-stablizer 111 is generally 2.5V-36V,
So can also be by way of the reference voltage of benchmark voltage-stablizer 111 be arranged into 12.7V, without setting partial pressure component
113, the present embodiment does not do any restriction to this.
Further, reactive power, and typically inductive can be produced when in use in the electrical equipment of power system
, so as to reduce the capacity service efficiency of power supply, in view of this, make to increase the stability of circuit and power supply capacity
With efficiency, control circuit 110 also includes compensating electric capacity 114, one end of compensating electric capacity 114 and the reference pole of benchmark voltage-stablizer 111
Electrical connection, the other end of compensating electric capacity 114 electrically connect with the negative electrode of benchmark voltage-stablizer 111.
It should be noted that in the present embodiment, metal-oxide-semiconductor 120 can use N-channel MOS pipe or P-channel metal-oxide-semiconductor, work as selection
During N-channel MOS pipe, the source electrode and power electric connection of metal-oxide-semiconductor 120, and the drain electrode of metal-oxide-semiconductor 120 electrically connects with load, i.e. this implementation
The output end of metal-oxide-semiconductor 120 described in example is the drain electrode of metal-oxide-semiconductor 120.
Simultaneously as in power supply power supply process, in fact it could happen that the situation that power supply or power isolation circuit 100 break down
Appearance, in order to power supply or power isolation circuit 100 failure when, the element in circuit is played a protective role,
In the present embodiment, power isolation circuit 100 also includes power protecting circuit 130, power protecting circuit 130 can in power supply or
When power isolation circuit 100 breaks down, prevent that the curtage in circuit is excessive, so as to play guarantor to the element in circuit
Shield acts on.
Specifically, the power protecting circuit 130 includes 3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance
R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 11st resistance R11, the 12nd resistance R12,
13rd resistance R13, the 14th resistance R14, the 15th resistance R15, the second triode Q2, the 3rd triode Q3, the four or three pole
Pipe Q4, electric capacity C1 and crystal electric capacity C3,3rd resistor R3 one end is used for and power electric connection, the other end of 3rd resistor with
Second triode Q2 base stage electrical connection, the second triode Q2 emitter stage electrically connect with the 11st resistance R11 one end, and the tenth
One resistance R11 other end ground connection, the 5th resistance R5, the 4th resistance R4 are electrically connected the second triode Q2 colelctor electrode successively, and
4th resistance R4 is used to electrically connect with a standby power, the 3rd triode Q3 emitter stage also one end with the 11st resistance R11
Electrical connection, the 3rd triode Q3 colelctor electrode electrically connect with the 7th resistance R7 one end, the 7th resistance the R7 other end and difference
Electrically connected with the 6th resistance R6 one end and the 4th triode Q4 base stage, the 6th resistance R6 other end and the four or three
Pole pipe Q4 colelctor electrode is used to electrically connect with standby power, the 4th triode Q4 other end respectively with the 8th resistance R8,
12 resistance R12 one end electrical connection, the 3rd triode Q3 the base stage other end with the 8th resistance R8, the 9th resistance R9 respectively
One end and the tenth resistance R10 one end electrical connection, the tenth resistance R10 the other end ground connection, the 9th resistance R9 other end
Being electrically connected with the output end of metal-oxide-semiconductor 120, the 12nd resistance R12 other end electrically connects with the base stage of the 5th triode, and the five or three
The grounded emitter of pole pipe, one end with the 15th resistance R15, metal-oxide-semiconductor 120 electrically connect the colelctor electrode of the 5th triode respectively,
The 15th resistance R15 other end is used to electrically connect with standby power, and the 14th resistance R14 one end is used for and standby power electricity
Connection, the 14th resistance R14 other end electrically connect with control circuit 110, electric capacity C1 one end and the transmitting of the 4th diode
Pole electrically connects, and the electric capacity C1 other end electrically connects with the 13rd resistance R13 one end, the 13rd resistance R13 other end ground connection,
Crystal electric capacity C3 one end electrically connects with the output end of metal-oxide-semiconductor 120, crystal electric capacity C3 other end ground connection.
Based on above-mentioned annexation, the concrete operating principle for the power isolation circuit 100 that the present embodiment provides is, when multiple
When power supply is identical load supplying simultaneously, when one of power supply breaks down, because the electricity of other power supplys can pour in down a chimney
Enter in the trouble power, so the voltage of the output end of the metal-oxide-semiconductor 120 in connected power isolation circuit 100 is due to electricity
The reason for amount is poured in down a chimney voltage can be more than or equal to 12.7V, simultaneously so that the voltage for flowing into the reference pole of benchmark voltage-stablizer 111 is big
In or equal to 2.5V, when so that benchmark voltage-stablizer 111 leakage current is produced between anode and negative electrode so that the first triode
112 conductings, electric current will flow through the loop of the first triode 112 after the conducting of the first triode 112, without flowing to metal-oxide-semiconductor 120
Grid, so that metal-oxide-semiconductor 120 is in cut-off state, trouble power is no longer load supplying, realizes the effect of isolation.
It should also be noted that, in the present embodiment, because the internal resistance of metal-oxide-semiconductor 120 is smaller, so being adopted relative to traditional
Loss when being isolated with diode is lower, so as to improve the efficiency of power supply.It will be exemplified below：
For example, when the electric current in loop is 30A, because the conduction voltage drop of isolating diode is about 0.7V, so every
Loss is P0=UI=0.7*30=21W during from diode current flow；And internal resistance is about 7.35m Ω during the conducting of metal-oxide-semiconductor 120, institute
Using the pressure drop on metal-oxide-semiconductor 120 as V1=30*0.00735=0.22V, further, the conduction loss on metal-oxide-semiconductor 120 is P0=
UI=0.22*30=6.6W, it can be seen that, using the mode of metal-oxide-semiconductor 120 than have dropped P1=21- using the scheme of diode
6.6=14.4W, loss during power supply normal work can be effectively reduced.
It should also be noted that, because in actual applications, metal-oxide-semiconductor 120 is likely to occur failure, cause power supply normal
For load supplying, in view of this, in the present embodiment, using two metal-oxide-semiconductors, power supply electrically connects with two metal-oxide-semiconductors respectively, when it
In metal-oxide-semiconductor when breaking down, power supply also can continue as load supplying by another metal-oxide-semiconductor.Meanwhile when use two
When in the case of metal-oxide-semiconductor, loss is changed into 6.6*2=13.2W, compared with by the way of being isolated using diode, using two
Metal-oxide-semiconductor is isolated, and can not only reduce loss, while be can also ensure that and more stablized when power supply is load supplying, even if its
In metal-oxide-semiconductor break down, can also ensure power supply for load normal power supply.Certain, in some other embodiments,
In order to reduce the loss under power supply state, any restriction can not be done to this only with a metal-oxide-semiconductor, the present embodiment yet.
Second embodiment
Referring to Fig. 3, the embodiment of the present invention additionally provides a kind of electric supply installation 200, the electric supply installation 200 includes quantity phase
With multiple power supplys 210 and first embodiment described in power isolation circuit 100, each power supply 210 with an isolated from power
Circuit 100 electrically connects, and the output end of each power isolation circuit 100 electrically connects with identical load.Also, in the present embodiment
In, multiple power supplys 210 refer at least two power supplys 210 and power isolation circuit 100 with power isolation circuit 100.
Specifically, referring to Fig. 4, in the present embodiment, power supply 210 respectively with power protecting circuit 130, control circuit
110 and metal-oxide-semiconductor 120 electrically connect.
In summary, the invention provides a kind of power isolation circuit and electric supply installation, the power isolation circuit to include control
Circuit and metal-oxide-semiconductor processed, control circuit electrically connect with metal-oxide-semiconductor, and control circuit is used for the voltage control of the output end according to metal-oxide-semiconductor
Metal-oxide-semiconductor is on or cut-off state.Because in the present invention, control circuit can be according to the voltage control of the output end of metal-oxide-semiconductor
The state of metal-oxide-semiconductor processed, i.e., when power supply 210 pours in down a chimney, control circuit can control metal-oxide-semiconductor to be in cut-off state, so as to reach
To the generation for preventing situation that power supply 210 pours in down a chimney.Simultaneously as internal resistance is about 0.35m Ω when metal-oxide-semiconductor turns on so that MOS
Pipe conducting when pressure drop it is smaller so that metal-oxide-semiconductor conducting when loss it is smaller, power supply 210 it is more efficient.
It should be noted that herein, the relational terms of such as " first " and " second " or the like are used merely to one
Individual entity or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or operate it
Between any this actual relation or order be present.Moreover, term " comprising ", "comprising" or its any other variant are intended to
Cover including for nonexcludability, so that process, method, article or equipment including a series of elements not only include those
Key element, but also the other element including being not expressly set out, or also include for this process, method, article or set
Standby intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Other identical element in the process including the key element, method, article or equipment also be present.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.It should be noted that：Similar label and letter exists
Similar terms is represented in following accompanying drawing, therefore, once being defined in a certain Xiang Yi accompanying drawing, is then not required in subsequent accompanying drawing
It is further defined and explained.
Claims (10)
1. a kind of power isolation circuit, it is characterised in that the power isolation circuit includes control circuit and metal-oxide-semiconductor, the control
Circuit processed is electrically connected with the metal-oxide-semiconductor, and the input of the metal-oxide-semiconductor, the control circuit are used to and a power electric connection, institute
The output end for stating metal-oxide-semiconductor is used to electrically connect with a load, and the control circuit is used for the voltage of the output end according to the metal-oxide-semiconductor
The metal-oxide-semiconductor is controlled to be on or cut-off state.
2. power isolation circuit as claimed in claim 1, it is characterised in that the control circuit includes voltage stabilizing element and first
Triode, the voltage stabilizing element electrically connect with the output end of the metal-oxide-semiconductor, and the voltage stabilizing element and first triode
Base stage electrically connects, and the colelctor electrode of first triode electrically connects with the grid of the metal-oxide-semiconductor, the transmitting of first triode
Pole is grounded, and the voltage stabilizing element is used to, when the voltage of the output end of the metal-oxide-semiconductor is more than presetting threshold voltage, control institute
The first triode ON is stated, so that the metal-oxide-semiconductor is in cut-off state, the voltage stabilizing element is additionally operable to work as the defeated of the metal-oxide-semiconductor
When going out the voltage at end and being less than or equal to presetting threshold voltage, first triode is controlled to disconnect, so that at the metal-oxide-semiconductor
In conducting state.
3. power isolation circuit as claimed in claim 2, it is characterised in that the voltage stabilizing element includes benchmark voltage-stablizer, institute
The reference pole for stating benchmark voltage-stablizer electrically connects with the output end of the metal-oxide-semiconductor, the negative electrode of the benchmark voltage-stablizer and described first
The base stage electrical connection of triode, the plus earth of the benchmark voltage-stablizer.
4. power isolation circuit as claimed in claim 3, it is characterised in that the control circuit also includes partial pressure component, institute
The reference pole that partial pressure component is stated with the benchmark voltage-stablizer electrically connects, and the output end of the metal-oxide-semiconductor passes through the partial pressure component
Ground connection.
5. power isolation circuit as claimed in claim 4, it is characterised in that the partial pressure component includes first resistor and second
Resistance, one end of the first resistor electrically connect with the output end of the metal-oxide-semiconductor, the other end of the first resistor respectively with institute
State one end electrical connection of the reference pole of benchmark voltage-stablizer, the second resistance, the other end ground connection of the second resistance, described the
The resistance of one resistance and the second resistance is the resistance of default certainty ratio.
6. power isolation circuit as claimed in claim 3, it is characterised in that the control circuit also includes compensating electric capacity, institute
The one end for stating compensating electric capacity electrically connects with the reference pole of the benchmark voltage-stablizer, the other end of the compensating electric capacity and the benchmark
The negative electrode electrical connection of voltage-stablizer.
7. power isolation circuit as claimed in claim 1, it is characterised in that the power isolation circuit also includes power protection
Circuit, the power protecting circuit electrically connect with the control circuit respectively, and the power protecting circuit is used for and the electricity
Source electrically connects.
8. power isolation circuit as claimed in claim 1, it is characterised in that the quantity of the metal-oxide-semiconductor is two.
9. power isolation circuit as claimed in claim 1, it is characterised in that the metal-oxide-semiconductor is N-channel MOS pipe or P-channel
Metal-oxide-semiconductor.
A kind of 10. electric supply installation, it is characterised in that the electric supply installation include multiple power supplys with the number of power sources identical
Power isolation circuit as described in claim 1 to 9 any one, each power supply with a power isolation circuit
Electrical connection, and the output end of each power isolation circuit electrically connects with identical load.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201711105864.XA CN107634642A (en) | 2017-11-10 | 2017-11-10 | A kind of power isolation circuit and electric supply installation |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711105864.XA CN107634642A (en) | 2017-11-10 | 2017-11-10 | A kind of power isolation circuit and electric supply installation |
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| CN107634642A true CN107634642A (en) | 2018-01-26 |
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| CN201711105864.XA Pending CN107634642A (en) | 2017-11-10 | 2017-11-10 | A kind of power isolation circuit and electric supply installation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108469582A (en) * | 2018-02-05 | 2018-08-31 | 天地融电子（天津）有限公司 | A kind of test circuit |
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| CN202978707U (en) * | 2012-11-30 | 2013-06-05 | 东莞市盈聚电子有限公司 | Communication base station power voltage stabilizing circuit having advantage of high current resistance |
| CN204794665U (en) * | 2015-05-04 | 2015-11-18 | 惠州三华工业有限公司 | Two export power supply steady voltage protection circuits |
-
2017
- 2017-11-10 CN CN201711105864.XA patent/CN107634642A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202978707U (en) * | 2012-11-30 | 2013-06-05 | 东莞市盈聚电子有限公司 | Communication base station power voltage stabilizing circuit having advantage of high current resistance |
| CN204794665U (en) * | 2015-05-04 | 2015-11-18 | 惠州三华工业有限公司 | Two export power supply steady voltage protection circuits |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108469582A (en) * | 2018-02-05 | 2018-08-31 | 天地融电子（天津）有限公司 | A kind of test circuit |
| CN108469582B (en) * | 2018-02-05 | 2020-09-08 | 天地融电子（天津）有限公司 | Test circuit |
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Application publication date: 20180126 |
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