CN107620104A - The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum - Google Patents
The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum Download PDFInfo
- Publication number
- CN107620104A CN107620104A CN201710914802.7A CN201710914802A CN107620104A CN 107620104 A CN107620104 A CN 107620104A CN 201710914802 A CN201710914802 A CN 201710914802A CN 107620104 A CN107620104 A CN 107620104A
- Authority
- CN
- China
- Prior art keywords
- aao
- preparation
- selective absorption
- photonic crystals
- sunlight spectrum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Surface Treatment Of Optical Elements (AREA)
Abstract
The preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum of the present invention, comprises the following steps：1) aluminum alloy base material is polished with sand paper clean, is put into 4~6min of alkali cleaning in alkali wash water, alkali cleaning temperature：60~70 DEG C, after rinsing well, 3~5min of pickling in pickle is put into, water is rinsed well rear standby；2) aluminum alloy base material is put into H2SO4Electrolyte in do the oxidation of periodicity time variant voltage, and minus plate uses graphite cake；3) anodic oxidation template dries up after being washed with distilled water, is put into 100~110g/L H3PO4Ac pore-enlarging in solution, processing time：3min；4) after sample ultrapure water, it is placed in NiSO4·6H2O and CuSO4·5H2O is to carry out AC electrodeposition in the deposition liquid of main salt.The absorber coatings have higher absorptivity in the range of 300~2500nm, there is relatively low infrared emittance in the range of 3300~25000nm.Material source is relatively broad, coating binding force is firm, and production cost is relatively low, can be with heat-absorbing materials such as applied solar energy water heaters.
Description
Technical field
The present invention relates to coating for selective absorption of sunlight spectrum field of material preparation, more particularly to AAO photonic crystals
The preparation method of coating for selective absorption of sunlight spectrum, AAO photonic crystals, right backward branc knot are prepared in the method for anodic oxidation
Metal nanoparticle is embedded in amorphous state Al by way of electro-deposition in the nano-porous structure of structure2O3Formed in (ceramic phase)
Cermet technology.
Background technology
As sustainable economic development trend increasingly strengthens, people are more and more urgent to the demand of clean energy resource.Solar energy
As a kind of renewable, free of contamination eco-friendly power source, more and more it is concerned by people.Selective solar spectrum, which absorbs, to be applied
Layer is the core material for realizing solar energy hot-cast socket, on the one hand, it has high suction for (0.3 μm -2.5 μm) in sunshine wave band
Yield, the amount of absorbing solar energy are converted into heat energy, and on the other hand, it has in infrared emanation wave band (2.5 μm -25 μm)
Low radiance, it can effectively suppress heat loss through radiation.Currently, the spectrum selective paint film structure that solar thermal collector uses
Typically it may be summarized to be basalis/infrared reflecting layer/solar spectrum absorbed layer/surface antireflection layer.What current in the market occurred
Layer material is absorbed in coating for selective absorption mainly Cr2O3-Cr、AlN-Al(NiOx TiN)、Al(Mo、W、Ni、Co)-Al2O3、
Al2O3-Mo-Al2O3、NiCrNxOy, TiNxOyDeng wherein NiCrNxOy、TiNxOyUsing more.But big Alternative is complex,
Material cost is higher, and simultaneously not environmentally.
(the Aqueous solution-chemical derived Ni-Al that Li etc. studies at it2O3solar
Selective absorbing coatings.Solar Energy Materials and Solar Cells, 2012,105：
To aluminum nitrate and nickel nitrate to add a certain amount of complexing agent and wetting agent in the aqueous solution of main salt in 90-95.), what is obtained is mixed
Liquid is closed in N2Compression ring border high temperature processing Al2O3Matrix, more environmentally friendly and higher collecting efficiency spectral selection is obtained and has absorbed
Coating.
Rebouta etc. studies (Solar selective absorbers based on Al at it2O3/W cermets
and AlSiN/AlSiON layers.Solar Energy Materials and Solar Cells,2015,137:93-
100) in, using the method for magnetron sputtering, it is prepared for making infrared reflecting layer, double-deck W/Al with W2O3Metal ceramics thin film makees absorbed layer,
SiO2Or Al2O3Make anti-reflection layer, prepared coating for selective absorption is 0.93-0.95 to the absorptivity of solar spectrum.Show
Preferable solar light spectrum absorption energy.
In recent years, using anodic oxidation with the method that electro-deposition is combined prepare the report of spectral selective absorbing coating compared with
To be rare, the absorbed layer deposited particles of spectral selective absorbing coating prepared by traditional anodizing are single, and coating body
It is that emissivity is higher, absorptivity-emissivity ratio is relatively low, can not meet the needs of social production development.
The content of the invention
The purpose of the present invention is to be directed to existing the shortcomings that preparing solar selective absorbing coatings method, there is provided AAO base photons
The preparation method of crystal coating for selective absorption of sunlight spectrum, material source is relatively broad, and coating binding force is firm, more ring
Protect, solar spectrum absorptivity is higher, the relatively low preparation method of infrared emittance.
In order to solve the above-mentioned technical problem, the present invention is achieved by the following technical solutions：
The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum, comprises the following steps：
1) aluminum alloy base material is polished with the sand paper of different model clean, after rinsing well, be put into alkali cleaning 4 in alkali wash water~
6min, alkali cleaning temperature：60~70 DEG C, after rinsing well, it is put into 3~5min of pickling in pickle, pickling temperature：Room temperature, finally
It is clean rear standby with ultrapure water；
2) aluminum alloy base material after pre-treatment is put into H2SO4Electrolyte in do the oxidation of periodicity time variant voltage, and minus plate
Using graphite cake；
3) dried up after obtained anodic oxidation template is washed with distilled water, be put into 100~110g/L H3PO4Handed in solution
Flow reaming, processing time：3min, temperature：Room temperature；
4) by after the sample ultrapure water after reaming, it is placed in NiSO4·6H2O and CuSO4·5H2O is main salt
Deposition liquid in carry out AC electrodeposition.
Further, in step 1), alkali wash water is 40~50g/L NaOH solutions and 0.5~1.5g/L C12H25SO4Na's is mixed
Solution is closed, pickle is 11%~15%H2SO4, 2%~5%HNO3Remaining is the mixed solution of water, and need to use ultrapure water
Totally.
Further, in step 2), H2SO4The concentration of electrolyte be 108g/L.
Further, in step 2), mainly point 5 stages, its corresponding time parameter are for each periodic voltage change：t0=
300~2400s, t1=12~60s, t2=12~60s, t3=10~40s, t4=36~90s, t5=128s；t0For initial oxygen
Change period, t1, t2, t3, t4, t5For the time in periodic oxidation stage.
Further, in step 2), periodic oxidation stage voltage parameter：U1=1.8~4.2V；U2=6.0~8.5V；U3
=3.8~6.2V；U4=2.8~5V；15~20/ DEG C of temperature；Oxidation cycle N=80~120.
Further, alloy infrared reflecting layer, Al are outwards included successively from substrate2O3Dense barrier layer, cermet absorbed layer
With AAO layer of photonic crystals.
Further, infrared reflecting layer is 6063 aluminium alloys；Cermet absorbed layer is mainly by Cu, the nano combined grains of Cu-Ni
The sub Cu/Al formed with amorphous anodised aluminium2O3、Cu-Ni/Al2O3Cermet sedimentary；AAO layer of photonic crystals
Mainly by the Al of periodic arrangement2O3Branch pipeline configuration is formed.
Further, in step 4), the sedimentary condition for carrying out AC electrodeposition is：The voltage under the conditions of ac frequency 50Hz
11~17V (RMS voltage), sedimentation time 100s~700s, 10 DEG C~40 DEG C of depositing temperature.
Further, in step 4), AC electrodeposition liquid, which mainly forms, is：40g~60g/L NiSO4·6H2O, 3~4.5g/
L CuSO4·5H2O, 25~30g/L H3BO4。
Compared with prior art, the beneficial effects of the invention are as follows：
The preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum of the present invention, the AAO base light of preparation
Sub- crystal coating for selective absorption of sunlight spectrum has higher absorptivity in the range of 300~2500nm, in 3300~25000nm
In the range of have relatively low infrared emittance.Material source is relatively broad, coating binding force is firm, and production cost is relatively low, Ke Yiying
With heat-absorbing materials such as solar water heaters.
Brief description of the drawings
Accompanying drawing is used for providing a further understanding of the present invention, is used to explain the present invention together with embodiments of the present invention,
It is not construed as limiting the invention, in the accompanying drawings：
Figure 1A AO photonic crystal spectral selective absorbing coating schematic diagrames.
In figure,
1 --- infrared reflecting layer, 2 --- Al2O3Dense barrier layer, 3 --- cermet absorbed layer；4 --- photonic crystal
Layer.
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that described herein preferred real
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Embodiment 1:
(1) aluminum alloy specimen pre-treatment：Aluminum alloy specimen is placed on 45g/L NaOH, the 1g/L that temperature is 70 DEG C
C12H25SO4Alkaline etching 3min in Na mixed solution.Sample after alkaline etching is rinsed well with water and is put into 10%H2SO4, 4%HNO3
Pickling 4min in mixed solution, by the test piece after acid with the preparation that AAO photonic crystals are carried out after ultrapure water.
(2) preparation of layer of photonic crystals：Aluminum alloy base material after pre-treatment is put into the H that concentration is 108g/L2SO4Electricity
The oxidation of periodicity time variant voltage is done in solution liquid, and minus plate uses graphite cake.Each periodic voltage change mainly divides 5 stages, its
Corresponding to time parameter is：t0=1200s, t1=40s, t2=36.2s, t3=24.46s, t4=61.42s, t5=128s, voltage
Parameter U1=3.2V, U2=7.0V, U3=5.2V, U4=3.8V；15 DEG C of temperature；Oxidation cycle N=80.
(3) ac pore-enlarging：It is clean to will be provided with the aluminum alloy specimen pure water rinsing of AAO photon crystal structures, after drying, puts
Enter 105g/L H3PO4Ac pore-enlarging is carried out in phosphoric acid solution, alternating voltage 4V (crest voltage) presoaks 10s, and pore-enlargement is
100s, temperature：Room temperature.
(4) AC electrodeposition：AAO photonic crystals aluminum alloy specimen after reaming totally, after drying is put with pure water rinsing
Enter to deposit and electro-deposition is carried out in liquid, AC electrodeposition is carried out in using nickel sulfate, copper sulphate as the deposition liquid of main salt, deposit liquid master
Form and be：40g/L NiSO4·6H2O、4g/L CuSO4·5H2O、25g/L H3BO4.Sedimentary condition：Voltage 11V (virtual values
Threshold voltage), a-c cycle 50Hz, sedimentation time 100s, 10 DEG C of depositing temperature.
Obtain AAO photonic crystal coating for selective absorption of sunlight spectrum absorptivity 0.8, emissivity 0.15, quality factor
5.3, Fig. 1 be AAO photonic crystal spectral selective absorbing coating schematic diagrames, outwards includes alloy infrared reflecting layer successively from substrate
1, Al2O3Dense barrier layer 2, cermet absorbed layer 3 and AAO layer of photonic crystals 4, wherein infrared reflecting layer 1 close for 6063 aluminium
Gold；The Cu/ that cermet absorbed layer 3 is mainly made up of Cu, Cu-Ni nano-complex particles with amorphous anodised aluminium
Al2O3、Cu-Ni/Al2O3Cermet sedimentary；AAO layer of photonic crystals 4 is mainly by the Al of periodic arrangement2O3Branch pipeline knot
Structure is formed.
AAO English full name are：Anodic aluminum oxide, anodised aluminium.
Embodiment 2:
(1) aluminum alloy specimen pre-treatment：Aluminum alloy specimen is placed on 45g/L NaOH, the 1g/L that temperature is 70 DEG C
C12H25SO4Alkaline etching 3min in Na mixed solution.Sample after alkaline etching is rinsed well with water and is put into 10%H2SO4, 4%HNO3
Pickling 4min in mixed solution, by the test piece after acid with the preparation that AAO photonic crystals are carried out after ultrapure water.
(2) preparation of layer of photonic crystals：Aluminum alloy base material after pre-treatment is put into the H that concentration is 108g/L2SO4Electricity
The oxidation of periodicity time variant voltage is done in solution liquid, and minus plate uses graphite cake.Each periodic voltage change mainly divides 5 stages, its
Corresponding to time parameter is：t0=1200s, t1=40s, t2=36.2s, t3=24.46s, t4=61.42s, t5=128s, voltage
Parameter U1=3.2V, U2=7.0V, U3=5.2V, U4=3.8V；15 DEG C of temperature；Oxidation cycle N=90.
(3) ac pore-enlarging：It is clean to will be provided with the aluminum alloy specimen pure water rinsing of AAO photon crystal structures, after drying, puts
Enter 105g/L H3PO4Ac pore-enlarging is carried out in phosphoric acid solution, alternating voltage 4V (crest voltage) presoaks 10s, and pore-enlargement is
300s, temperature：Room temperature.
(4) AC electrodeposition：AAO photonic crystals aluminum alloy specimen after reaming totally, after drying is put with pure water rinsing
Enter to deposit and electro-deposition is carried out in liquid, AC electrodeposition is carried out in using nickel sulfate, copper sulphate as the deposition liquid of main salt, deposit liquid master
Form and be：45g/L NiSO4·6H2O、3.5g/L CuSO4·5H2O、25g/L H3BO4.Sedimentary condition：Voltage 14V is (effectively
It is worth threshold voltage), a-c cycle 50Hz, sedimentation time 100s, 25 DEG C of depositing temperature.
Obtain AAO photonic crystal coating for selective absorption of sunlight spectrum absorptivity 0.84, emissivity 0.14, quality factor
6。
Embodiment 3:
(1) aluminum alloy specimen pre-treatment：Aluminum alloy specimen is placed on 45g/L NaOH, the 1g/L that temperature is 70 DEG C
C12H25SO4Alkaline etching 3min in Na mixed solution.Sample after alkaline etching is rinsed well with water and is put into 10%H2SO4, 4%HNO3
Pickling 4min in mixed solution, by the test piece after acid with the preparation that AAO photonic crystals are carried out after ultrapure water.
(2) preparation of layer of photonic crystals：Aluminum alloy base material after pre-treatment is put into the H that concentration is 108g/L2SO4Electricity
The oxidation of periodicity time variant voltage is done in solution liquid, and minus plate uses graphite cake.Each periodic voltage change mainly divides 5 stages, its
Corresponding to time parameter is：t0=1200s, t1=40s, t2=36.2s, t3=24.46s, t4=61.42s, t5=128s, voltage
Parameter U1=3.2V, U2=7.0V, U3=5.2V, U4=3.8V；18 DEG C of temperature；Oxidation cycle N=100.
(3) ac pore-enlarging：It is clean to will be provided with the aluminum alloy specimen pure water rinsing of AAO photon crystal structures, after drying, puts
Enter 105g/L H3PO4Ac pore-enlarging is carried out in phosphoric acid solution, alternating voltage 4V (crest voltage) presoaks 10s, and pore-enlargement is
150s, temperature：Room temperature.
(4) AC electrodeposition：AAO photonic crystals aluminum alloy specimen after reaming totally, after drying is put with pure water rinsing
Enter to deposit and electro-deposition is carried out in liquid, AC electrodeposition is carried out in using nickel sulfate, copper sulphate as the deposition liquid of main salt, deposit liquid master
Form and be：45g/L NiSO4·6H2O、3g/L CuSO4·5H2O、30g/L H3BO4.Sedimentary condition：Voltage 14V (virtual values
Threshold voltage), a-c cycle 50Hz, sedimentation time 700s, 10 DEG C of depositing temperature.
Obtain AAO photonic crystal coating for selective absorption of sunlight spectrum absorptivity 0.92, emissivity 0.18, quality factor
5.1。
Embodiment 4:
(1) aluminum alloy specimen pre-treatment：Aluminum alloy specimen is placed on 45g/L NaOH, the 1g/L that temperature is 70 DEG C
C12H25SO4Alkaline etching 3min in Na mixed solution.Sample after alkaline etching is rinsed well with water and is put into 10%H2SO4, 4%HNO3
Pickling 4min in mixed solution, by the test piece after acid with the preparation that AAO photonic crystals are carried out after ultrapure water.
(2) preparation of layer of photonic crystals：Aluminum alloy base material after pre-treatment is put into the H that concentration is 108g/L2SO4Electricity
The oxidation of periodicity time variant voltage is done in solution liquid, and minus plate uses graphite cake.Each periodic voltage change mainly divides 5 stages, its
Corresponding to time parameter is：t0=1200s, t1=40s, t2=36.2s, t3=24.46s, t4=61.42s, t5=128s, voltage
Parameter U1=3.2V, U2=7.0V, U3=5.2V, U4=3.8V；20 DEG C of temperature；Oxidation cycle N=110.
(3) ac pore-enlarging：It is clean to will be provided with the aluminum alloy specimen pure water rinsing of AAO photon crystal structures, after drying, puts
Enter 105g/L H3PO4Ac pore-enlarging is carried out in phosphoric acid solution, alternating voltage 4V (crest voltage) presoaks 10s, and pore-enlargement is
100s, temperature：Room temperature.
(4) AC electrodeposition：AAO photonic crystals aluminum alloy specimen after reaming totally, after drying is put with pure water rinsing
Enter to deposit and electro-deposition is carried out in liquid, AC electrodeposition is carried out in using nickel sulfate, copper sulphate as the deposition liquid of main salt, deposit liquid master
Form and be：40g/L NiSO4·6H2O、3.5g/L CuSO4·5H2O、30g/L H3BO4.Sedimentary condition：Voltage 17V is (effectively
It is worth threshold voltage), a-c cycle 50Hz, sedimentation time 100s, 40 DEG C of depositing temperature.
Obtain AAO photonic crystal coating for selective absorption of sunlight spectrum absorptivity 0.84, emissivity 0.12, quality factor
7。
Embodiment 5:
(1) aluminum alloy specimen pre-treatment：Aluminum alloy specimen is placed on 45g/L NaOH, the 1g/L that temperature is 70 DEG C
C12H25SO4Alkaline etching 3min in Na mixed solution.Sample after alkaline etching is rinsed well with water and is put into 10%H2SO4, 4%HNO3
Pickling 4min in mixed solution, by the test piece after acid with the preparation that AAO photonic crystals are carried out after ultrapure water.
(2) preparation of layer of photonic crystals：Aluminum alloy base material after pre-treatment is put into the H that concentration is 108g/L2SO4Electricity
The oxidation of periodicity time variant voltage is done in solution liquid, and minus plate uses graphite cake.Each periodic voltage change mainly divides 5 stages, its
Corresponding to time parameter is：t0=1200s, t1=40s, t2=36.2s, t3=24.46s, t4=61.42s, t5=128s, voltage
Parameter U1=3.2V, U2=7.0V, U3=5.2V, U4=3.8V；15 DEG C of temperature；Oxidation cycle N=90.
(3) ac pore-enlarging：It is clean to will be provided with the aluminum alloy specimen pure water rinsing of AAO photon crystal structures, after drying, puts
Enter 105g/L H3PO4Ac pore-enlarging is carried out in phosphoric acid solution, alternating voltage 4V (crest voltage) presoaks 10s, and pore-enlargement is
300s, temperature：Room temperature.
(4) AC electrodeposition：AAO photonic crystals aluminum alloy specimen after reaming totally, after drying is put with pure water rinsing
Enter to deposit and electro-deposition is carried out in liquid, AC electrodeposition is carried out in using nickel sulfate, copper sulphate as the deposition liquid of main salt, deposit liquid master
Form and be：45g/L NiSO4·6H2O、4g/L CuSO4·5H2O、30g/L H3BO4.Sedimentary condition：Voltage 17V (virtual values
Threshold voltage), a-c cycle 50Hz, sedimentation time 400s, 10 DEG C of depositing temperature.
Obtain AAO photonic crystal coating for selective absorption of sunlight spectrum absorptivity 0.87, emissivity 0.14, quality factor
6.2。
Embodiment 6:
(1) aluminum alloy specimen pre-treatment：Aluminum alloy specimen is placed on 45g/L NaOH, the 1g/L that temperature is 70 DEG C
C12H25SO4Alkaline etching 3min in Na mixed solution.Sample after alkaline etching is rinsed well with water and is put into 10%H2SO4, 4%HNO3
Pickling 4min in mixed solution, by the test piece after acid with the preparation that AAO photonic crystals are carried out after ultrapure water.
(2) preparation of layer of photonic crystals：Aluminum alloy base material after pre-treatment is put into the H that concentration is 108g/L2SO4Electricity
The oxidation of periodicity time variant voltage is done in solution liquid, and minus plate uses graphite cake.Each periodic voltage change mainly divides 5 stages, its
Corresponding to time parameter is：t0=1200s, t1=40s, t2=36.2s, t3=24.46s, t4=61.42s, t5=128s, voltage
Parameter U1=3.2V, U2=7.0V, U3=5.2V, U4=3.8V；15 DEG C of temperature；Oxidation cycle N=100.
(3) ac pore-enlarging：It is clean to will be provided with the aluminum alloy specimen pure water rinsing of AAO photon crystal structures, after drying, puts
Enter 105g/L H3PO4Ac pore-enlarging is carried out in phosphoric acid solution, alternating voltage 4V (crest voltage) presoaks 10s, and pore-enlargement is
150s, temperature：Room temperature.
(4) AC electrodeposition：AAO photonic crystals aluminum alloy specimen after reaming totally, after drying is put with pure water rinsing
Enter to deposit and electro-deposition is carried out in liquid, AC electrodeposition is carried out in using nickel sulfate, copper sulphate as the deposition liquid of main salt, deposit liquid master
Form and be：40g/L NiSO4·6H2O、3.5g/L CuSO4·5H2O、25g/L H3BO4.Sedimentary condition：Voltage 17V is (effectively
It is worth threshold voltage), a-c cycle 50Hz, sedimentation time 700s, 25 DEG C of depositing temperature.
Obtain AAO photonic crystal coating for selective absorption of sunlight spectrum absorptivity 0.95, emissivity 0.13, quality factor
7.3。
Finally it should be noted that：The preferred embodiments of the present invention are these are only, are not intended to limit the invention, although
The present invention is described in detail with reference to embodiment, for those skilled in the art, it still can be to foregoing
Technical scheme described in each embodiment is modified, or to which part technical characteristic carry out equivalent substitution, but it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements made etc., the protection of the present invention should be included in
Within the scope of.
Claims (9)
- The preparation method of 1.AAO photonic crystal coating for selective absorption of sunlight spectrum, it is characterised in that comprise the following steps：1) aluminum alloy base material is polished with the sand paper of different model clean, after rinsing well, be put into alkali cleaning 4 in alkali wash water~ 6min, alkali cleaning temperature：60~70 DEG C, after rinsing well, it is put into 3~5min of pickling in pickle, pickling temperature：Room temperature, finally It is clean rear standby with ultrapure water；2) aluminum alloy base material after pre-treatment is put into H2SO4Electrolyte in do periodicity time variant voltage oxidation, and minus plate use Graphite cake；3) dried up after obtained anodic oxidation template is washed with distilled water, be put into 100~110g/L H3PO4Exchange and expand in solution Hole, processing time：3min, temperature：Room temperature；4) by after the sample ultrapure water after reaming, it is placed in NiSO4·6H2O and CuSO4·5H2O is the deposition of main salt AC electrodeposition is carried out in liquid.
- 2. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In in step 1), alkali wash water is 40~50g/L NaOH solutions and 0.5~1.5g/L C12H25SO4Na mixed solution, pickling Liquid is 11%~15%H2SO4, 2%~5%HNO3Remaining is the mixed solution of water, and need to be clean with ultrapure water.
- 3. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In, in step 2), H2SO4The concentration of electrolyte be 108g/L.
- 4. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In in step 2), mainly point 5 stages, its corresponding time parameter are for each periodic voltage change：t0=300~2400s, t1= 12~60s, t2=12~60s, t3=10~40s, t4=36~90s, t5=128s；t0For initial oxidation period, t1, t2, t3, t4, t5For the time in periodic oxidation stage.
- 5. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In, in step 2), periodic oxidation stage voltage parameter：U1=1.8~4.2V；U2=6.0~8.5V；U3=3.8~6.2V； U4=2.8~5V；15~20/ DEG C of temperature；Oxidation cycle N=80~120.
- 6. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In outwards including alloy infrared reflecting layer, Al successively from substrate2O3Dense barrier layer, cermet absorbed layer and AAO photons are brilliant Body layer.
- 7. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 6, its feature exists In infrared reflecting layer is 6063 aluminium alloys；Cermet absorbed layer mainly by Cu, Cu-Ni nano-complex particles with it is amorphous The Cu/Al that anodised aluminium is formed2O3、Cu-Ni/Al2O3Cermet sedimentary；AAO layer of photonic crystals is mainly by periodically The Al of arrangement2O3Branch pipeline configuration is formed.
- 8. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In in step 4), the sedimentary condition for carrying out AC electrodeposition is：11~17V of voltage is (effective under the conditions of ac frequency 50Hz Threshold voltage), sedimentation time 100s~700s, 10 DEG C~40 DEG C of depositing temperature.
- 9. the preparation method of AAO photonic crystals coating for selective absorption of sunlight spectrum according to claim 1, its feature exists In in step 4), AC electrodeposition liquid, which mainly forms, is：40g~60g/L NiSO4·6H2O, 3~4.5g/L CuSO4· 5H2O, 25~30g/L H3BO4。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710914802.7A CN107620104A (en) | 2017-09-30 | 2017-09-30 | The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710914802.7A CN107620104A (en) | 2017-09-30 | 2017-09-30 | The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107620104A true CN107620104A (en) | 2018-01-23 |
Family
ID=61091687
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710914802.7A Pending CN107620104A (en) | 2017-09-30 | 2017-09-30 | The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107620104A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110320745A (en) * | 2019-06-26 | 2019-10-11 | 复旦大学 | Passive cooling film of flexibility with ideal emission spectra and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752296A (en) * | 2005-06-08 | 2006-03-29 | 武汉大学 | Method for preparing aluminium oxide nano-form photon crystal |
| CN101220510A (en) * | 2007-09-26 | 2008-07-16 | 武汉大学 | Method for manufacturing high quality aluminum oxide photon crystal |
| CN101451260A (en) * | 2008-12-18 | 2009-06-10 | 安徽大学 | Method for preparing porous alumina formwork with Y type structure |
| CN102181902A (en) * | 2011-04-21 | 2011-09-14 | 华南理工大学 | Method for coloring aluminum and alloy surface thereof |
| CN102560650A (en) * | 2010-12-29 | 2012-07-11 | 中国科学院合肥物质科学研究院 | Porous aluminum oxide photonic crystal and preparation method and applications thereof |
| CN102644112A (en) * | 2011-02-17 | 2012-08-22 | 中国科学院合肥物质科学研究院 | Alumina photonic crystal heterojunction and preparation method thereof |
| CN103803618A (en) * | 2013-12-30 | 2014-05-21 | 中国科学院宁波材料技术与工程研究所 | Preparation method of three-dimensional nano structure of porous anodic aluminum oxide |
| CN106350849A (en) * | 2016-09-18 | 2017-01-25 | 佛山科学技术学院 | Method for preparing solar spectrum high-absorption and low-emission oxidation films on aluminum surfaces by means of electro-deposition |
-
2017
- 2017-09-30 CN CN201710914802.7A patent/CN107620104A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1752296A (en) * | 2005-06-08 | 2006-03-29 | 武汉大学 | Method for preparing aluminium oxide nano-form photon crystal |
| CN101220510A (en) * | 2007-09-26 | 2008-07-16 | 武汉大学 | Method for manufacturing high quality aluminum oxide photon crystal |
| CN101451260A (en) * | 2008-12-18 | 2009-06-10 | 安徽大学 | Method for preparing porous alumina formwork with Y type structure |
| CN102560650A (en) * | 2010-12-29 | 2012-07-11 | 中国科学院合肥物质科学研究院 | Porous aluminum oxide photonic crystal and preparation method and applications thereof |
| CN102644112A (en) * | 2011-02-17 | 2012-08-22 | 中国科学院合肥物质科学研究院 | Alumina photonic crystal heterojunction and preparation method thereof |
| CN102181902A (en) * | 2011-04-21 | 2011-09-14 | 华南理工大学 | Method for coloring aluminum and alloy surface thereof |
| CN103803618A (en) * | 2013-12-30 | 2014-05-21 | 中国科学院宁波材料技术与工程研究所 | Preparation method of three-dimensional nano structure of porous anodic aluminum oxide |
| CN106350849A (en) * | 2016-09-18 | 2017-01-25 | 佛山科学技术学院 | Method for preparing solar spectrum high-absorption and low-emission oxidation films on aluminum surfaces by means of electro-deposition |
Non-Patent Citations (1)
| Title |
|---|
| HONGYANG WEI ET AL: ""Improving solar thermal absorption of an anodic aluminum oxide-based photonic crystal with Cu-Ni composite nanoparticles", 《CERAMICS INTERNATIONAL》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110320745A (en) * | 2019-06-26 | 2019-10-11 | 复旦大学 | Passive cooling film of flexibility with ideal emission spectra and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106350849B (en) | The oxidation film electro-deposition preparation method of aluminium surface high-selenium corn and low transmitting solar spectrum | |
| Sabzi et al. | Microstructural analysis and optical properties evaluation of sol-gel heterostructured NiO-TiO2 film used for solar panels | |
| JPS6014983B2 (en) | Selective solar absorption coating on aluminum | |
| CN103078010B (en) | A kind of full adopting non-vacuum process preparation method of copper-zinc-tin-sulfur film solar cell | |
| CN103881709B (en) | A kind of multi-stage porous TiO2The preparation method of/quantum dot composite material | |
| CN108330524B (en) | Nano nickel titanium dioxide nanotube array perforated membrane and preparation method thereof | |
| CN104143587A (en) | Surface passivation technology capable of improving performance of copper indium gallium selenium thin-film solar cells | |
| CN106128772B (en) | A kind of preparation method of vulcanized lead quantum dot photovoltaic battery | |
| CN102184995A (en) | Long-range plasmon waveguide array synergy unit for solar cell | |
| CN103866389A (en) | Preparation method of porous single crystal nanosheet TiN on carbon fiber and use | |
| CN114134506A (en) | Porous composite photoelectric energy storage material for photoinduced continuous cathodic protection and preparation and application thereof | |
| CN107779921A (en) | The preparation method of the compound heat absorbing coating of AAO photonic crystal based high-temp-resistant ternary nanos | |
| CN109786493A (en) | A kind of high adhesion force ceramics and glass-reflected coating paste and its preparation method and application | |
| CN107403853B (en) | A kind of ZTO-ZnO/CBS-GSs flexible thin-film solar cells and preparation method thereof | |
| CN102839375B (en) | Method for preparing light absorption layer of CuInSe2 (CIS) flexible thin-film solar cell | |
| CN105742402B (en) | The preparation method and its structure of a kind of lamination solar cell | |
| CN105779926B (en) | Prepare the new process for being used for high temperature solar energy selective absorption coating under atmospheric environment | |
| CN107620104A (en) | The preparation method of AAO photonic crystal coating for selective absorption of sunlight spectrum | |
| CN202094161U (en) | Long-range plasma excimer waveguide array synergy unit for solar cell | |
| CN103694877B (en) | Nanofiber solar energy efficient absorption composite membrane and preparation thereof and spraying method | |
| CN101950678A (en) | Ag modified ZnO membrane electrode of dye sensitized solar cell and preparation method thereof | |
| CN109502545A (en) | Germanium selenide base sun photodegradation aquatic products hydrogen electronic device, electrode system and preparation method thereof | |
| CN104404565A (en) | Au/TiO2 nanotube composite structure photoelectrode and preparation method thereof | |
| CN105040070B (en) | A kind of preparation method of titanium TA2 surface high solar absorption low-launch-rate film layer | |
| CN100580961C (en) | Method for preparing CuInS2 thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180123 |