CN102839375B - Method for preparing light absorption layer of CuInSe2 (CIS) flexible thin-film solar cell - Google Patents
Method for preparing light absorption layer of CuInSe2 (CIS) flexible thin-film solar cell Download PDFInfo
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- CN102839375B CN102839375B CN201210369197.7A CN201210369197A CN102839375B CN 102839375 B CN102839375 B CN 102839375B CN 201210369197 A CN201210369197 A CN 201210369197A CN 102839375 B CN102839375 B CN 102839375B
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Abstract
The invention discloses a method for preparing a light absorption layer of a CuInSe2 (CIS) flexible thin-film solar cell, relating to the method for preparing the light absorption layer of the CuInSe2 (CIS) flexible thin-film solar cell. In order to solve problems of immature technology of chemical nickel plating on the surface of polyimide, poor bonding strength of a plating layer, poor cover degree and high construction cost due to adoption of palladium activation, the method comprises the following steps of: removing oil of a polyimide thin film; thickening the polyimide thin film subjected to oil removing; placing the thickened polyimide thin film in activate fluid to lead activation soaking; leading activation heat treatment; leading activation soaking and activation heat treatment again; reducing the polyimide thin film subjected to activation soaking; placing the polyimide thin film in chemical plating solution for plating; and depositing CuInSe2 on the surface of the polyimide thin film by an electric deposition method, wherein the deposited polyimide thin film is the light absorption layer of the CIS flexible thin-film solar cell. The method is used for preparing the light absorption layer of the CIS flexible thin-film solar cell.
Description
Technical field
The present invention relates to a kind of method of light absorbing zone of the CIS of preparation flexible thin-film solar cell.
Background technology
Under the serious situation of global conventional energy resources shortage of resources, environmental pollution, sun power is a kind of inexhaustible, nexhaustible green energy resource, provides effective way for solving the problems such as energy shortage and environmental pollution.In numerous photovoltaic materials, copper indium diselenide (CuInSe
2, CIS) and owing to thering is adjustable optical band gap, high absorptivity (6 × 10
5cm
-1), the stronger feature such as capability of resistance to radiation and satisfactory stability, be generally considered one of the most potential solar cell.The preparation method of CIS has a variety of, and wherein electrodip process is because its cost is low, can big area, continuously, the advantage such as low temperature depositing, become study hotspot.CuInSe
2film, due to its good performance, has become the preferred material of third generation solar cell.Ripe CIS thin-film solar cells is all to adopt glass basis at present, causes the heavy and difficult carrying of battery, so increasingly ardent to the CIS thin-film solar cells research of flexible substrate in recent years.Had people's sheet metal, as Copper Foil, titanium thin slice etc., prepared CIS thin-film solar cells, but its thermal expansivity are low as flexible substrate, and the curling rear folding line that easily stays, and affect the performance of battery before.And majority concentrates on vacuum method, cost is expensive and be unfavorable for scale operation.
Electroless plating has unique advantage, and it adapts to, and matrix extensively, all plates and covering power is good, convenient for production, changes Coating composition and content and can realize several functions.But in current production process, immature in the technique of polyimide surface chemical nickel plating, coat binding strength is bad, and coverage is poor.Non-metal material surface electroless plating is all to adopt palladium activation mostly, and this kind of method cost is high, and the use of chemical plating technology is restricted.
Summary of the invention
The object of the invention is in order to solve at present immature in the technique of polyimide surface chemical nickel plating, coat binding strength is bad, coverage is poor and adopt the high problem of palladium activation cost, the invention provides a kind of method of light absorbing zone of the CIS of preparation flexible thin-film solar cell.
The method of the light absorbing zone of preparation CIS flexible thin-film solar cell of the present invention,
It comprises the steps:
Step 1: to Kapton oil removing: Kapton is put into acetone and flood after 5min, then clean to surface without hanging pearl phenomenon with washing powder water, tap water and distilled water successively;
Step 2: the Kapton alligatoring by after oil removing in step 1: Kapton is put into coarsening solution and carry out alligatoring, coarsening time is 10min ~ 20min, wherein coarsening solution is NaOH solution, and the temperature of NaOH solution is 80 ℃ ~ 90 ℃, and concentration is 10g/L ~ 50g/L;
Step 3: Kapton after alligatoring in step 2 is put into activation solution and carry out the auxiliary activation dipping of ultrasonic wave 30min ~ 40min; Then the Kapton after activation dipping is carried out to 200 ℃ ~ 230 ℃ activation heat treatment 30min ~ 40min; Wherein activation solution is that the concentration that is 50g/L ~ 60g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 40g/L ~ 50g/L and Trisodium Citrate is 20g/L ~ 30g/L, sodium hypophosphite, single nickel salt and Trisodium Citrate is added to the water to mix form;
Step 4: repeating step three once, then performs step five;
Step 5: the Kapton after activation heat treatment is put into sodium hypophosphite solution and reduce, until Kapton surface stops reduction while all there is metalluster, the temperature of described sodium hypophosphite solution is 100 ℃, and concentration is 20g/L ~ 30g/L;
Step 6: the Kapton after reduction in step 5 is put into chemical plating fluid plating 30min, wherein chemical plating fluid is that the concentration that is 30g/L ~ 40g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 25g/L ~ 30g/L, Trisodium Citrate is that the concentration of 10g/L ~ 15g/L and sodium-acetate is 10g/L ~ 15g/L, sodium hypophosphite, single nickel salt, Trisodium Citrate and sodium-acetate is added to the water to mix form; The pH of described chemical plating fluid is 4.5～5, and temperature is 85 ℃～95 ℃;
Step 7: adopt electrodip process Kapton surface deposition CuInSe after plating in step 6
2, surface deposition CuInSe
2after Kapton be the light absorbing zone of CIS flexible thin-film solar cell.
The invention has the advantages that, adopt alkaline coarse metallization processes to realize the alligatoring to Kapton, respond well; Adopt no-palladium activating technique to realize Kapton activation, active centre is even, active good; After activation, first reduce, adopt again acidic nickel plating technique to realize the chemical nickel plating of Kapton, binding force of cladding material is good, average shear intensity can reach 49.5MPa, ultimate tensile strength can reach 7.73MPa, and the outward appearance after Kapton surface chemistry nickel deposited is half light, and bonding force is good, coverage is high, and cost is lower simultaneously.
Accompanying drawing explanation
Fig. 1 is the SEM figure of undressed Kapton.
Fig. 2 is the SEM figure of the Kapton after alligatoring in the specific embodiment of the present invention one.
Fig. 3 is the SEM figure of the rear Kapton of reduction in the specific embodiment of the present invention one.
Fig. 4 is the SEM of Kapton figure after plating in the specific embodiment of the present invention one.
Fig. 5 is 90 of Kapton ° of visual angle AFM figure after plating in the specific embodiment of the present invention one, and X-coordinate represents respectively length and the width on Kapton surface after plating.
Fig. 6 is 45 of Kapton ° of visual angle AFM figure after plating in the specific embodiment of the present invention one, and ordinate zou represents the thickness of Kapton after plating.
Fig. 7 is the shear tension curve synoptic diagram that adopts the Kapton after the chemical nickel plating of step 6 in the specific embodiment of the present invention one, and ordinate zou represents pressure, the length that X-coordinate is Kapton.
Fig. 8 is the docking stress strain curve schematic diagram that adopts the Kapton after the chemical nickel plating of step 6 in the specific embodiment of the present invention one, and ordinate zou represents pressure, the length that X-coordinate is Kapton.
Fig. 9 adopts electrodip process at Kapton surface deposition CuInSe in the specific embodiment of the present invention two
2after, the SEM that forms the light absorbing zone of CIS flexible thin-film solar cell schemes.
Figure 10 is the XRD schematic diagram that adopts the Kapton of method of the present invention, and 2Theta represents the twice of the incident angle of X ray.Curve A represents to carry out the XRD schematic diagram of the Kapton after step 3 and step 4 activation heat treatment, and curve B represents the XRD schematic diagram of the Kapton before activation heat treatment, and curve C represents the XRD schematic diagram of the Kapton after chemical nickel plating.
Embodiment
Embodiment one: the method for the light absorbing zone of the preparation CIS flexible thin-film solar cell described in present embodiment, the method for the light absorbing zone of preparation CIS flexible thin-film solar cell,
It comprises the steps:
Step 1: to Kapton oil removing: Kapton is put into acetone and flood after 5min, then clean to surface without hanging pearl phenomenon with washing powder water, tap water and distilled water successively;
Step 2: the Kapton alligatoring by after oil removing in step 1: Kapton is put into coarsening solution and carry out alligatoring, coarsening time is 10min ~ 20min, wherein coarsening solution is NaOH solution, and the temperature of NaOH solution is 80 ℃ ~ 90 ℃, and concentration is 10g/L ~ 50g/L;
Step 3: Kapton after alligatoring in step 2 is put into activation solution and carry out the auxiliary activation dipping of ultrasonic wave 30min ~ 40min; Then the Kapton after activation dipping is carried out to 200 ℃ ~ 230 ℃ activation heat treatment 30min ~ 40min; Wherein activation solution is that the concentration that is 50g/L ~ 60g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 40g/L ~ 50g/L and Trisodium Citrate is 20g/L ~ 30g/L, sodium hypophosphite, single nickel salt and Trisodium Citrate is added to the water to mix form;
Step 4: repeating step three once, then performs step five;
Step 5: the Kapton after activation heat treatment is put into sodium hypophosphite solution and reduce, until Kapton surface stops reduction while all there is metalluster, the temperature of described sodium hypophosphite solution is 100 ℃, and concentration is 20g/L ~ 30g/L;
Step 6: the Kapton after reduction in step 5 is put into chemical plating fluid plating 30min, wherein chemical plating fluid is that the concentration that is 30g/L ~ 40g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 25g/L ~ 30g/L, Trisodium Citrate is that the concentration of 10g/L ~ 15g/L and sodium-acetate is 10g/L ~ 15g/L, sodium hypophosphite, single nickel salt, Trisodium Citrate and sodium-acetate is added to the water to mix form; The pH of described chemical plating fluid is 4.5～5, and temperature is 85 ℃～95 ℃;
Step 7: adopt electrodip process Kapton surface deposition CuInSe after plating in step 6
2, surface deposition CuInSe
2after Kapton be the light absorbing zone of CIS flexible thin-film solar cell.
In present embodiment, in the time regulating the pH of chemical plating fluid, regulate with acetic acid;
Kapton (PI) is can the highest a kind of macromolecule polymer material of withstand temp, can bear 300 ℃, short period of time 400 ℃ of deposit film technological processs under vacuum condition.Also there is radiation hardness simultaneously, be difficult for aging, do not absorb water, the advantage such as good insulation preformance, particularly collapsible, quality is light, its density is 1.4g/cm
3, area is 1m
2, the polyimide film that thickness is 0.05mm, quality is only 70g, this just becomes the first-selected substrate material of light flexible solar cell of development high-specific-power.First electroless plating layer of metal coating on polyimide film, and then at its surface electrical deposition absorption layer film.Electroless plating is one of important method of material surface modifying technology, can make nonmetal basal body surface metalation, in nearly 20 years, the technical development of chemical nickel plating is rapid, and it has, and cost is low, equipment is simple, coating is even, and can be used for the advantages such as the plating of complicated shape matrix.Show that at polyimide chemical nickel plating can make the bottom electrode of the copper-indium-galliun-selenium film solar cell of low cost, high-level efficiency and stable performance.Adopt the Kapton surface deposition CuInSe of a step electrodip process after metallization
2preparation CIS flexible thin-film solar cell absorption layer.
Kapton after alligatoring in undressed Kapton and present embodiment as can be seen from comparison with Figure 1 and Figure 2, adopts the alkaline coarse metallization processes in present embodiment to realize the alligatoring to Kapton, better effects if.
After reducing in step 5 in present embodiment as can be seen from Figure 3 and Figure 4, then adopt the acidic nickel plating technique of step 6 to realize the chemical nickel plating of Kapton, binding force of cladding material is good;
In present embodiment, adopt the average shear intensity of the Kapton after the chemical nickel plating of step 6 can reach 49.5MPa, ultimate tensile strength can reach 7.73Mpa.
Embodiment two: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment one, described step 2 is: the Kapton alligatoring by after oil removing in step 1: Kapton is put into coarsening solution and carry out alligatoring, coarsening time is 10min, wherein coarsening solution is NaOH solution, the temperature of NaOH solution is 80 ℃, and concentration is 10g/L.
Embodiment three: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment one,
Described step 3 is: Kapton after alligatoring in step 2 is put into activation solution and carry out the auxiliary activation dipping of ultrasonic wave 30min; Then the Kapton after activation dipping is carried out to 200 ℃ of activation heat treatment 30min; Wherein activation solution is that the concentration that is 50g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 40g/L and Trisodium Citrate is 20g/L, sodium hypophosphite, single nickel salt and Trisodium Citrate is added to the water to mix form.
Embodiment four: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment one, described step 5 is: the Kapton after activation heat treatment is put into sodium hypophosphite solution and reduce, until Kapton surface stops reduction while all there is metalluster, the temperature of described sodium hypophosphite solution is 100 ℃, and concentration is 20g/L.
Embodiment five: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment one,
Kapton after reduction in step 5 is put into chemical plating fluid plating 30min, wherein chemical plating fluid is that the concentration that is 30g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 25g/L, Trisodium Citrate is that the concentration of 10g/L and sodium-acetate is 10g/L, sodium hypophosphite, single nickel salt, Trisodium Citrate and sodium-acetate is added to the water to mix form; The pH of described chemical plating fluid is 4.5～5, and temperature is 90 ℃.
Embodiment six: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment one, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate pH to 2 ~ 3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L ~ 1.5mmol/L, Trisodium Citrate is 0.1mol/L ~ 0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L ~ 5.0mmol/L and SeO
2concentration be 4mmol/L ~ 4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min ~ 70min under the constant potential condition that is 1.2V ~ 1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃ ~ 400 ℃.
Adopt the Kapton surface deposition CuInSe of a step electrodip process after metallization
2.Electrolytic solution is the sulfate solution system that contains copper sulfate, indium sulfate, selenium oxide and Trisodium Citrate, using the polyimide that is coated with Ni layer as negative electrode, adopts constant potential electro-deposition method to prepare CIS film.
AFM full name Atomic Force Microscope, i.e. atomic force microscope.
XRD full name X-ray diffraction, X-ray diffraction.
Embodiment seven: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment six,
In described step 7, adopt electrodip process Kapton surface deposition CuInSe after plating in step 6
2method be: regulate the pH to 2 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L ~ 1.5mmol/L, Trisodium Citrate is 0.1mol/L ~ 0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L ~ 5.0mmol/L and SeO
2concentration be 4mmol/L ~ 4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min ~ 70min under the constant potential condition that is 1.2V ~ 1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃ ~ 400 ℃.
Embodiment eight: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment six, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate pH to 2 ~ 3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L, Trisodium Citrate is 0.1mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L and SeO
2concentration be 4mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min ~ 70min under the constant potential condition that is 1.2V ~ 1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃ ~ 400 ℃.
Embodiment nine: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment six, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate pH to 2 ~ 3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L ~ 1.5mmol/L, Trisodium Citrate is 0.1mol/L ~ 0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L ~ 5.0mmol/L and SeO
2concentration be 4mmol/L ~ 4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 60min under the constant potential condition that is 1.2V ~ 1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃ ~ 400 ℃.
Embodiment ten: present embodiment is the further illustrating of method of the light absorbing zone to the preparation CIS flexible thin-film solar cell described in embodiment six, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate pH to 2 ~ 3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L ~ 1.5mmol/L, Trisodium Citrate is 0.1mol/L ~ 0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L ~ 5.0mmol/L and SeO
2concentration be 4mmol/L ~ 4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min ~ 70min under the constant potential condition that is 1.2V ~ 1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 350 ℃.
Claims (9)
1. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell, it comprises the steps:
Step 1: to Kapton oil removing: Kapton is put into acetone and flood after 5min, then clean to surface without hanging pearl phenomenon with washing powder water, tap water and distilled water successively;
Step 2: the Kapton alligatoring by after oil removing in step 1: Kapton is put into coarsening solution and carry out alligatoring, coarsening time is 10min～20min, wherein coarsening solution is NaOH solution, and the temperature of NaOH solution is 80 ℃～90 ℃, and concentration is 10g/L～50g/L;
Step 3: Kapton after alligatoring in step 2 is put into activation solution and carry out the auxiliary activation dipping of ultrasonic wave 30min～40min; Then the Kapton after activation dipping is carried out to 200 ℃～230 ℃ activation heat treatment 30min～40min; Wherein activation solution is that the concentration that is 50g/L～60g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 40g/L～50g/L and Trisodium Citrate is 20g/L～30g/L, sodium hypophosphite, single nickel salt and Trisodium Citrate is added to the water to mix form;
Step 4: repeating step three once, then performs step five;
Step 5: the Kapton after activation heat treatment is put into sodium hypophosphite solution and reduce, until Kapton surface stops reduction while all there is metalluster, the temperature of described sodium hypophosphite solution is 100 ℃, and concentration is 20g/L～30g/L;
Step 6: the Kapton after reduction in step 5 is put into chemical plating fluid plating 30min, wherein chemical plating fluid is that the concentration that is 30g/L～40g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 25g/L～30g/L, Trisodium Citrate is that the concentration of 10g/L～15g/L and sodium-acetate is 10g/L～15g/L, sodium hypophosphite, single nickel salt, Trisodium Citrate and sodium-acetate is added to the water to mix form; The pH of described chemical plating fluid is 4.5～5, and temperature is 85 ℃～95 ℃;
Step 7: adopt electrodip process Kapton surface deposition CuInSe after plating in step 6
2, surface deposition CuInSe
2after Kapton be the light absorbing zone of CIS flexible thin-film solar cell;
It is characterized in that, in described step 7, adopt electrodip process Kapton surface deposition CuInSe after plating in step 6
2method be: regulate pH to 2～3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L～1.5mmol/L, Trisodium Citrate is 0.1mol/L～0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L～5.0mmol/L and SeO
2concentration be 4mmol/L～4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min～70min under the constant potential condition that is 1.2V～1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃～400 ℃.
2. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, it is characterized in that, described step 2 is: the Kapton alligatoring by after oil removing in step 1: Kapton is put into coarsening solution and carry out alligatoring, coarsening time is 10min, wherein coarsening solution is NaOH solution, the temperature of NaOH solution is 80 ℃, and concentration is 10g/L.
3. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, is characterized in that, described step 3 is: Kapton after alligatoring in step 2 is put into activation solution and carry out the auxiliary activation dipping of ultrasonic wave 30min; Then the Kapton after activation dipping is carried out to 200 ℃ of activation heat treatment 30min; Wherein activation solution is that the concentration that is 50g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 40g/L and Trisodium Citrate is 20g/L, sodium hypophosphite, single nickel salt and Trisodium Citrate is added to the water to mix form.
4. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, it is characterized in that, described step 5 is: the Kapton after activation heat treatment is put into sodium hypophosphite solution and reduce, until Kapton surface stops reduction while all there is metalluster, the temperature of described sodium hypophosphite solution is 100 ℃, and concentration is 20g/L.
5. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, is characterized in that, described step 6 is:
Kapton after reduction in step 5 is put into chemical plating fluid plating 30min, wherein chemical plating fluid is that the concentration that is 30g/L, single nickel salt by the concentration of sodium hypophosphite is that the concentration of 25g/L, Trisodium Citrate is that the concentration of 10g/L and sodium-acetate is 10g/L, sodium hypophosphite, single nickel salt, Trisodium Citrate and sodium-acetate is added to the water to mix form; The pH of described chemical plating fluid is 4.5～5, and temperature is 90 ℃.
6. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, is characterized in that, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate the pH to 2 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L～1.5mmol/L, Trisodium Citrate is 0.1mol/L～0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L～5.0mmol/L and SeO
2concentration be 4mmol/L～4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min～70min under the constant potential condition that is 1.2V～1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃～400 ℃.
7. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, is characterized in that,
In described step 7, adopt electrodip process Kapton surface deposition CuInSe after plating in step 6
2method be: regulate pH to 2～3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L, Trisodium Citrate is 0.1mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L and SeO
2concentration be 4mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min～70min under the constant potential condition that is 1.2V～1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃～400 ℃.
8. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, is characterized in that, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate pH to 2～3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L～1.5mmol/L, Trisodium Citrate is 0.1mol/L～0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L～5.0mmol/L and SeO
2concentration be 4mmol/L～4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 60min under the constant potential condition that is 1.2V～1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 300 ℃～400 ℃.
9. the method for the light absorbing zone of preparation CIS flexible thin-film solar cell according to claim 1, is characterized in that, adopts electrodip process Kapton surface deposition CuInSe after plating in step 6 in described step 7
2method be: regulate pH to 2～3 of electrolytic solution, the Kapton after plating in step 6 is immersed in electrolytic solution, wherein electrolytic solution is pressed CuSO
4concentration be that the concentration of 1mmol/L～1.5mmol/L, Trisodium Citrate is 0.1mol/L～0.3mol/L, Cu
2(SO
4)
3concentration be 4.5mmol/L～5.0mmol/L and SeO
2concentration be 4mmol/L～4.5mmol/L, by CuSO
4, Trisodium Citrate, Cu
2(SO
4)
3and SeO
2be added to the water to mix and form; And take out after depositing 50min～70min under the constant potential condition that is 1.2V～1.5V at voltage, after cleaning, put into the chamber type electric resistance furnace thermal treatment 30min of 350 ℃.
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| CN103540915B (en) * | 2013-11-12 | 2015-09-23 | 哈尔滨理工大学 | A kind of method of polyimide surface electroless copper |
| CN104278255B (en) * | 2014-09-23 | 2016-08-03 | 哈尔滨工程大学 | Sodium silicate modifies the nickel sulfide conductive film layer preparation method in polypropylene surface |
| US9496452B2 (en) * | 2014-10-20 | 2016-11-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of absorber surface repairing by solution process |
| CN106556171B (en) * | 2015-09-29 | 2018-11-23 | 淄博环能海臣环保技术服务有限公司 | A kind of etching generation high temperature resistant selective absorbing functional membrane |
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