CN107615603B - 光源装置和检查装置 - Google Patents

光源装置和检查装置 Download PDF

Info

Publication number
CN107615603B
CN107615603B CN201680030969.0A CN201680030969A CN107615603B CN 107615603 B CN107615603 B CN 107615603B CN 201680030969 A CN201680030969 A CN 201680030969A CN 107615603 B CN107615603 B CN 107615603B
Authority
CN
China
Prior art keywords
light
light source
wavelength
optical amplifier
source device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680030969.0A
Other languages
English (en)
Chinese (zh)
Other versions
CN107615603A (zh
Inventor
中村共则
西泽充哲
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN107615603A publication Critical patent/CN107615603A/zh
Application granted granted Critical
Publication of CN107615603B publication Critical patent/CN107615603B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/265—Contactless testing
    • G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • G01R31/311—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation of integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5027—Concatenated amplifiers, i.e. amplifiers in series or cascaded
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Lasers (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)
CN201680030969.0A 2015-05-29 2016-05-10 光源装置和检查装置 Active CN107615603B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015-110187 2015-05-29
JP2015110187 2015-05-29
PCT/JP2016/063864 WO2016194556A1 (ja) 2015-05-29 2016-05-10 光源装置及び検査装置

Publications (2)

Publication Number Publication Date
CN107615603A CN107615603A (zh) 2018-01-19
CN107615603B true CN107615603B (zh) 2024-06-04

Family

ID=57440607

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680030969.0A Active CN107615603B (zh) 2015-05-29 2016-05-10 光源装置和检查装置

Country Status (6)

Country Link
US (1) US10408874B2 (https=)
EP (1) EP3306761B1 (https=)
JP (2) JP6059411B1 (https=)
KR (1) KR102403498B1 (https=)
CN (1) CN107615603B (https=)
WO (1) WO2016194556A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6605651B2 (ja) * 2018-03-27 2019-11-13 株式会社フジクラ レーザモジュール及びレーザ装置
JP7219096B2 (ja) 2019-01-21 2023-02-07 浜松ホトニクス株式会社 分光測定装置および分光測定方法
US11874213B2 (en) * 2020-03-17 2024-01-16 Becton, Dickinson And Company Gain matched amplifiers for light detection
KR102286322B1 (ko) * 2020-05-29 2021-08-06 한국광기술원 마이크로 led 검사 시스템 및 방법
CN111596158A (zh) * 2020-05-29 2020-08-28 苏州市运泰利自动化设备有限公司 基于产品老化测试状态的感光放大系统及方法
CN116057465A (zh) * 2020-09-09 2023-05-02 古河电气工业株式会社 光源、光源装置、光源的驱动方法、拉曼放大器以及拉曼放大系统
EP4213189B1 (en) 2020-09-23 2026-03-04 Hamamatsu Photonics K.K. Inspection device
JP2023084807A (ja) * 2021-12-08 2023-06-20 古河電気工業株式会社 光源、光源装置、光源の駆動方法、ラマン増幅器、およびラマン増幅システム
US20240142512A1 (en) * 2022-10-31 2024-05-02 Texas Instruments Incorporated Semiconductor device testing

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1208178A (zh) * 1997-08-11 1999-02-17 富士通株式会社 光放大的方法和设备以及含此设备的系统
CN1380758A (zh) * 1996-11-25 2002-11-20 株式会社日立制作所 光放大媒体的控制方法和光放大装置及利用它的系统
CN1591154A (zh) * 2003-08-29 2005-03-09 三星电子株式会社 低噪声多波长光源以及使用该光源的波分复用系统
US20130070793A1 (en) * 2011-09-16 2013-03-21 Kabushiki Kaisha Toshiba Fiber laser
CN103563064A (zh) * 2011-05-31 2014-02-05 浜松光子学株式会社 集成电路检查装置
WO2014028013A1 (en) * 2012-08-16 2014-02-20 Massachusetts Institute Of Technology Optical source for interferometric fiber optic gyroscopes
CN104300360A (zh) * 2014-10-16 2015-01-21 浙江大学 一种改善超辐射发光二极管光源波长稳定性的装置和方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2306605B1 (en) * 1998-07-23 2012-05-23 The Furukawa Electric Co., Ltd. Pumping unit for a Raman amplifier and Raman amplifier comprising the same
US7593647B2 (en) * 2002-09-19 2009-09-22 Novera Optics, Inc. Apparatuses and methods for automatic wavelength locking of an optical transmitter to the wavelength of an injected incoherent light signal
KR20050009584A (ko) * 2003-07-18 2005-01-25 삼성전자주식회사 반도체 광증폭기와 광증폭 모듈
JP2009049123A (ja) * 2007-08-17 2009-03-05 Fujifilm Corp 光半導体素子、該光半導体素子を用いた波長可変光源および光断層画像取得装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1380758A (zh) * 1996-11-25 2002-11-20 株式会社日立制作所 光放大媒体的控制方法和光放大装置及利用它的系统
CN1208178A (zh) * 1997-08-11 1999-02-17 富士通株式会社 光放大的方法和设备以及含此设备的系统
CN1591154A (zh) * 2003-08-29 2005-03-09 三星电子株式会社 低噪声多波长光源以及使用该光源的波分复用系统
CN103563064A (zh) * 2011-05-31 2014-02-05 浜松光子学株式会社 集成电路检查装置
US20130070793A1 (en) * 2011-09-16 2013-03-21 Kabushiki Kaisha Toshiba Fiber laser
WO2014028013A1 (en) * 2012-08-16 2014-02-20 Massachusetts Institute Of Technology Optical source for interferometric fiber optic gyroscopes
CN104300360A (zh) * 2014-10-16 2015-01-21 浙江大学 一种改善超辐射发光二极管光源波长稳定性的装置和方法

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
High-Power, Broad-Band 1550 nm Light Source by Tandem Combination of a Superluminescent Diode and an Er-Doped Fiber Amplifier;Norman S.Kwong;《IEEE PHOTONICS TECHNOLOGY LETTERS》;19920930;第4卷(第9期);正文第1-3页及图1-5 *
K.-Y.Liou等.Operation of an LED with a Single-Mode Semiconductor Amplifier as a Broad-Band 1.3-um Transmitter Source.《IEEE PHOTONICS TECHNOLOGY LETTERS》.1995,第7卷(第9期),全文. *
Norman S.Kwong.High-Power, Broad-Band 1550 nm Light Source by Tandem Combination of a Superluminescent Diode and an Er-Doped Fiber Amplifier.《IEEE PHOTONICS TECHNOLOGY LETTERS》.1992,第4卷(第9期),正文第1-3页及图1-5. *
Operation of an LED with a Single-Mode Semiconductor Amplifier as a Broad-Band 1.3-um Transmitter Source;K.-Y.Liou等;《IEEE PHOTONICS TECHNOLOGY LETTERS》;19950930;第7卷(第9期);全文 *

Also Published As

Publication number Publication date
EP3306761A4 (en) 2019-01-23
KR20180013937A (ko) 2018-02-07
EP3306761A1 (en) 2018-04-11
JP2017092480A (ja) 2017-05-25
JP6714500B2 (ja) 2020-06-24
US20180156860A1 (en) 2018-06-07
US10408874B2 (en) 2019-09-10
JP6059411B1 (ja) 2017-01-11
EP3306761B1 (en) 2022-06-22
JPWO2016194556A1 (ja) 2017-06-22
CN107615603A (zh) 2018-01-19
WO2016194556A1 (ja) 2016-12-08
KR102403498B1 (ko) 2022-05-31

Similar Documents

Publication Publication Date Title
CN107615603B (zh) 光源装置和检查装置
US10101383B2 (en) Semiconductor device inspection device and semiconductor device inspection method
KR101951969B1 (ko) 집적 회로 검사 장치
US10705139B2 (en) Semiconductor device inspection device and semiconductor device inspection method
KR102530265B1 (ko) 캐리어 수명 측정 방법 및 캐리어 수명 측정 장치
US9618576B2 (en) Apparatus for testing a semiconductor device and method of testing a semiconductor device
TWI901737B (zh) 檢查裝置
KR102769879B1 (ko) 반도체 시료의 검사 장치 및 검사 방법
CN111727495B (zh) 浓度测定方法及浓度测定装置
JP2016223899A (ja) 光源装置及び検査装置
KR102566737B1 (ko) 광 계측 장치
JP2016136153A (ja) 集積回路検査装置
WO2019230147A1 (ja) 光差分検出器及び検査装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant