CN107611217A - The manufacture method and HBC type crystalline solar cells of HBC type crystalline solar cells - Google Patents
The manufacture method and HBC type crystalline solar cells of HBC type crystalline solar cells Download PDFInfo
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Abstract
The present invention provides the manufacture method and HBC type crystalline solar cells of HBC type crystalline solar cells.This method possesses following process in order：The substrate formed using the silicon metal by the first conductivity type, three layers be made up of i type amorphous Si layers α, the amorphous Si layer β of the conductivity type different with the first conductivity type and the first metal layer are overlapped to form in order in another surface side for being located at the one side opposite side incident from light relative to substrate；At least all amorphous Si layer β and the first metal layer are removed by using the etching method of mask and form recess；By using the membrane formation process of the mask, to form i type amorphous Si layers γ in a manner of the inner bottom surface and medial surface that cover the recess；By using the membrane formation process of the mask, the amorphous Si layer δ with the first conductivity type identical conductivity type is formed in a manner of the amorphous Si layer γ set on the inner bottom surface and medial surface that cover the recess；Second metal layer is formed with a manner of filling up in the recess formed by amorphous Si layer δ coverings.
Description
Technical field
When can obtain the present invention relates to the simplification that can realize manufacturing process and stably vertical view adjacent electrode it
Between independence (isolated) property HBC type crystalline solar cells manufacture method and HBC type crystalline solar cells.
Background technology
In the past, it is known that using silicon metal in the solar cell (below, also referred to as crystalline solar cells) of substrate, to carry on the back
Contacted solar cell can obtain high generation efficiency.Wherein, back contacts type (HBC types) crystallization of confirmed hetero-junctions type
Solar cell possesses highest generating efficiency in the world, gets most of the attention from many aspects.
In this HBC types crystalline solar cells, in the back side of silicon substrate (positioned at the face of the opposite side of light entrance face)
On via i types amorphous Si layer, local configuration has the position being made up of n-type amorphous Si layer and the portion being made up of p-type amorphous Si layer respectively
Position, and be configured to be separated from each other.It is known to manufacture HBC types via process as shown in figure 20 to obtain this structure
Crystalline solar cells (for example, prior art of patent document 1 etc.).
Figure 20 is the schematic sectional of one for representing the manufacture method involved by existing HBC types crystalline solar cells
Figure.That is, in Figure 20 (a), film forming i types amorphous Si layer 1002 and n-type amorphous Si layer 1003 in the one side of silicon 1001.
In Figure 20 (b), the photoresist 1004 with desired pattern is formed on n-type amorphous Si layer 1003.
In Figure 20 (c), i types amorphous Si layer 1002 and n-type amorphous Si layer 1003 are entered using photoresist 1004
Row etching.
In Figure 20 (d), photoresist 1004 is peeled off after the etching.
In Figure 20 (e), etch stop layer 1005 is formed.It is right by carrying out mask process to etch stop layer 1005
The etch stop layer 1005 for not forming the separation unit of n-type amorphous Si layer is etched.Further thereon, in whole region film forming
I types amorphous Si layer 1006 and p-type amorphous Si layer 1007.
In Figure 20 (f), photoresist 1008 is formed in separation unit.
In Figure 20 (g), using photoresist 1008, i types amorphous Si layer 1006 and p-type amorphous Si layer 1007 are entered
Row etching.
In Figure 20 (h), photoresist 1008 is peeled off after the etching.
In Figure 20 (i), release etch barrier layer 1005.
It is non-in 1002 portion detached from each other of i types amorphous Si layer and n-type amorphous Si layer 1003 and p-type in Figure 20 (j)
Film forming i types amorphous Si layer 1009 in the separation unit of brilliant Si layers 1007.
That is, can be by via above-mentioned multiple works for the manufacture method of existing HBC types crystalline solar cells
Sequence [Figure 20], the specific pattern being made up of n-type amorphous Si layer 1003 (position A) and p-type amorphous Si layer 1007 (position B) is made first
Case region.Therefore, it has to carry out the skill and technique such as multiple photoetching and etching.If however, patterned using this skill and technique,
Process number increases and increases with the cost of manufacturing line and be connected as shown in Figure 20, so in solar cell it is low into
The difficult situation of this change.
Patent document 1：Japanese Patent Publication 2012-243797 publications
The content of the invention
The present invention is to propose in view of the foregoing, and its object is to provide to realize the simplification of manufacturing process simultaneously
The manufacturer of the HBC type crystalline solar cells of independence (isolated) property between electrode adjacent during vertical view can stably be obtained
Method and HBC type crystalline solar cells.
The manufacture method of HBC type crystalline solar cells involved by the 1st aspect of the present invention possesses in order：Use
The substrate being made up of the silicon metal of the first conductivity type (n-type), it is being located at side opposite with the one side of light incidence relative to the substrate
Another surface side, overlap to form in order by the amorphous Si layer α of i types, the conductivity type (p-type) different from first conductivity type
Three layers of the process that amorphous Si layer β and the first metal layer are formed；At least all removed by using the etching method of mask described non-
Brilliant Si layers β and the first metal layer and the process for forming recess；It is described recessed to cover by using the membrane formation process of the mask
The process that the inner bottom surface in portion and the mode of medial surface form the amorphous Si layer γ of i types；By using the membrane formation process of the mask, with
Cover the amorphous Si layer γ set on the inner bottom surface and medial surface of the recess mode formed it is identical with first conductivity type
Conductivity type (n-type) amorphous Si layer δ process；With in a manner of filling up by the recess that forms of amorphous Si layer δ coverings
The process for forming the second metal layer (by what is formed with the first metal layer identical part).
The manufacture method of HBC type crystalline solar cells involved by the 2nd aspect of the present invention possesses in order：Use
The substrate being made up of the silicon metal of the first conductivity type (n-type), it is being located at side opposite with the one side of light incidence relative to the substrate
Another surface side, overlap to form the amorphous Si layer α by i types and the conductivity type (p-type) different from first conductivity type in order
Amorphous Si layer β form two layers of process；At least all remove the amorphous Si layer β by using the etching method of mask and shape
Into the process of recess；By using the membrane formation process of the mask, the shape in a manner of the inner bottom surface and medial surface that cover the recess
Into the amorphous Si layer γ of i types；By using the membrane formation process of the mask, set with covering on the inner bottom surface of the recess and medial surface
The amorphous Si layer γ put mode forms the amorphous Si layer δ with the first conductivity type identical conductivity type (n-type)；With described
The process that metal level is formed on the amorphous Si layer β and amorphous Si layer δ.
The manufacture method of HBC type crystalline solar cells involved by the 3rd aspect of the present invention possesses in order：Use
The substrate being made up of the silicon metal of the first conductivity type (n-type), it is being located at side opposite with the one side of light incidence relative to the substrate
Another surface side, overlap to form in order by the amorphous Si layer α of i types, with the first conductivity type identical conductivity type (n-type)
Three layers of the process that amorphous Si layer β and the first metal layer are formed；At least all removed by using the etching method of mask described non-
Brilliant Si layers β and the first metal layer and the process for forming recess；It is described recessed to cover by using the membrane formation process of the mask
The process that the inner bottom surface in portion and the mode of medial surface form the amorphous Si layer γ of i types；By using the membrane formation process of the mask, with
Cover the amorphous Si layer γ set on the inner bottom surface and medial surface of the recess mode formed it is different from first conductivity type
Conductivity type (p-type) amorphous Si layer δ process；With in a manner of filling up by the recess that forms of amorphous Si layer δ coverings
The process for forming the second metal layer (by what is formed with the first metal layer identical part).
The manufacture method of HBC type crystalline solar cells involved by the 4th aspect of the present invention possesses in order：Use
The substrate being made up of the silicon metal of the first conductivity type (n-type), it is being located at side opposite with the one side of light incidence relative to the substrate
Another surface side, overlap to form in order by i types amorphous Si layer α and with the first conductivity type identical conductivity type (n-type)
Amorphous Si layer β form two layers of process；At least all remove the amorphous Si layer β by using the etching method of mask and shape
Into the process of recess；By using the membrane formation process of the mask to be formed in a manner of the inner bottom surface and medial surface that cover the recess
The amorphous Si layer γ of i types process；By using the membrane formation process of the mask, to cover the inner bottom surface of the recess and medial surface
The amorphous Si layer γ of upper setting mode forms the amorphous Si layer δ of the conductivity type (p-type) different from first conductivity type work
Sequence；With the process that metal level is formed on the amorphous Si layer β and the amorphous Si layer δ.
In the manufacture method of the HBC type crystalline solar cells involved by the 1st aspect of the present invention~fourth way,
The amorphous Si layer α of the i types can be removed in a manner of so that the another side of the substrate does not expose by forming the process of the recess
And form recess.
In the manufacture method of the HBC type crystalline solar cells involved by the 1st aspect of the present invention~fourth way,
Formed the process of the recess can be removed in a manner of so that the another side of the substrate exposes the i types amorphous Si layer α and
Form recess.
In the manufacture method of the HBC type crystalline solar cells involved by the 1st aspect of the present invention~fourth way,
Same parts can be used as the first metal layer and the second metal layer.
HBC type crystalline solar cells involved by the 5th aspect of the present invention possess：Substrate, by the first conductivity type (n
Type) silicon metal form；The amorphous Si layer γ of amorphous Si layer α and the i type of i types, it is located at continuous cover equivalent to the substrate
The mode of the another side of side opposite with the one side that light is incident configures；The conductivity type (p-type) different from first conductivity type it is non-
Brilliant Si layers β, to be configured in a manner of covering the amorphous Si layer α of the i types；The conductivity type (n-type) different from first conductivity type
Amorphous Si layer δ, configured in a manner of covering the i types amorphous Si layer γ；The first metal layer, to cover the amorphous Si layer β
Mode configure；And second metal layer, configured in a manner of covering the amorphous Si layer δ, the HBC types crystalline solar cells
Have between the amorphous Si layer β and the amorphous Si layer δ：The position being made up of the amorphous Si of i types, with the amorphous Si layer
γ connections, and be configured as passing through between the first metal layer and the second metal layer；With by with it is described first conductive
The position that the amorphous Si of type identical conductivity type (n-type) is formed, is connected with the amorphous Si layer δ, and along described by the non-of i types
The position configuration that brilliant Si is formed.
HBC type crystalline solar cells involved by the 6th aspect of the present invention possess：Substrate, by the first conductivity type (n
Type) silicon metal form；The amorphous Si layer γ of amorphous Si layer α and the i type of i types, it is located at continuous cover equivalent to the substrate
The mode of the another side of side opposite with the one side that light is incident configures；It is non-with the first conductivity type identical conductivity type (n-type)
Brilliant Si layers β, to be configured in a manner of covering the amorphous Si layer α of the i types；The conductivity type (p-type) different from first conductivity type
Amorphous Si layer δ, to be configured in a manner of covering the amorphous Si layer γ of the i types；The first metal layer, to cover the amorphous Si layer
β mode covers；And second metal layer, configured in a manner of covering the amorphous Si layer δ, the HBC types crystallize solar-electricity
Pond has between the amorphous Si layer β and the amorphous Si layer δ：The position being made up of the amorphous Si of i types, with the amorphous Si
Layer γ connections, and be configured as passing through between the first metal layer and the second metal layer；With by being led with described first
The position that the amorphous Si of the different conductivity type of electric type (p-type) is formed, is connected with the amorphous Si layer δ, and along described by i types
The position configuration that amorphous Si is formed.
The manufacture method of HBC type crystalline solar cells according to involved by the 1st aspect of the present invention~fourth way,
It in the case of without using the skill and technique such as necessary photoetching or etching in the prior art, can be connect the lower surface of the first metal layer
It is that the state that electricity is split is (patterned between the amorphous Si layer δ that tactile amorphous Si layer β and the lower surface of second metal layer are contacted
State).That is, according to the 1st aspect of the present invention~fourth way, manufacture is contributed to stably to obtain adjacent during vertical view
Electrode between independence (isolated) property HBC type crystalline solar cells.In addition, according to the 1st aspect of the present invention~4th
Mode, bring the manufacture method of the HBC type crystalline solar cells of process number when can significantly cut down manufacture.Particularly, originally
Manufacture method involved by first method~fourth way of invention brings constructing for the vacuum system all the time without wet processing.
Therefore, according to the 1st aspect of the present invention~fourth way, the system of following HBC type crystalline solar cells is brought
Make method：That is, the process number when manufacture method can significantly cut down manufacture, can stably obtain electrode adjacent during vertical view
Between independence (isolated) property, and can stably be obtained without need for the electrode of patterned process.Therefore, according to the present invention's
First method~fourth way, help to construct the inexpensive manufacturing line of HBC type crystalline solar cells.
According to the HBC type crystalline solar cells involved by the 5th aspect of the present invention and the 6th mode, can obtain
As the amorphous Si layer γ's that i types between the first metal layer and second metal layer of the electrode performance function of adjacent position be present
Structure.In addition, the amorphous Si layer β contacted in the lower surface of the first metal layer contacted with the lower surface of second metal layer it is non-
There is also the amorphous Si layer γ of i types between brilliant Si layers δ, so that being between the two the state of electricity segmentation.Thus, of the invention
Five modes and the 6th mode, which help to provide, can stably obtain independence (isolated) property between electrode adjacent during vertical view
HBC type crystalline solar cells.
In addition, in the HBC type crystalline solar cells involved by the 5th aspect of the present invention and the 6th mode, can be set to
The first metal layer of function and each surface profile almost in the same plane of second metal layer are played as electrode.Therefore,
Such as in the case where setting reflectance coating etc. thereon, the amorphous Si layer β's that can make to contact the lower surface of the first metal layer
The action effect for the amorphous Si layer δ that action effect is contacted with to the lower surface of second metal layer is almost identical.Thus, can also
The few reflectance coating of partial deviations is added in the rear side of HBC type crystalline solar cells.Therefore, according to the 5th aspect of the present invention
And the 6th mode, bring the HBC type crystalline solar cells that generating efficiency is high.
Brief description of the drawings
Fig. 1 is the schematic sectional for the first embodiment for representing HBC type crystalline solar cells involved in the present invention
Figure.
Fig. 2 is the schematic cross sectional views for the manufacturing process for representing the HBC type crystalline solar cells shown in Fig. 1.
Fig. 3 is the schematic cross sectional views for the subsequent processing for representing the process shown in Fig. 2.
Fig. 4 is the schematic cross sectional views for the subsequent processing for representing the process shown in Fig. 3.
Fig. 5 is the schematic cross sectional views for the subsequent processing for representing the process shown in Fig. 4.
Fig. 6 is the schematic cross sectional views for the subsequent processing for representing the process shown in Fig. 5.
Fig. 7 is the schematic sectional for the second embodiment for representing HBC type crystalline solar cells involved in the present invention
Figure.
Fig. 8 is the schematic cross sectional views for the manufacturing process for representing the HBC type crystalline solar cells shown in Fig. 7.
Fig. 9 is the schematic cross sectional views for the subsequent processing for representing the process shown in Fig. 8.
Figure 10 is the schematic cross sectional views for the subsequent processing for representing the process shown in Fig. 9.
Figure 11 is the schematic cross sectional views for the subsequent processing for representing the process shown in Figure 10.
Figure 12 is the schematic cross sectional views for the subsequent processing for representing the process shown in Figure 11.
Figure 13 is the schematic sectional for the 3rd embodiment for representing HBC type crystalline solar cells involved in the present invention
Figure.
Figure 14 is the schematic sectional for the 4th embodiment for representing HBC type crystalline solar cells involved in the present invention
Figure.
Figure 15 is the schematic sectional for the 5th embodiment for representing HBC type crystalline solar cells involved in the present invention
Figure.
Figure 16 is the flow chart of the manufacturing process for the HBC type crystalline solar cells for representing conventional example (Figure 20).
Figure 17 is the flow chart of the manufacturing process for the HBC type crystalline solar cells for representing (Fig. 1) of the invention.
Figure 18 is the schematic diagram of one of the manufacture device for representing HBC type crystalline solar cells involved in the present invention.
Figure 19 is the signal of another of the manufacture device for representing HBC type crystalline solar cells involved in the present invention
Figure.
Figure 20 is the schematic cross sectional views for the manufacturing process for representing existing HBC types crystalline solar cells.
Embodiment
Below, solar-electricity is crystallized to the back contacts type (HBC types) of hetero-junctions type involved in the present invention based on accompanying drawing
One embodiment in pond illustrates.
<First embodiment>
(HBC types crystalline solar cells)
Fig. 1 is the structure to the HBC type crystalline solar cells 100J (100) involved by the first embodiment of the present invention
The figure illustrated.
The solar cell 100J (100) of present embodiment is to cover the back side of substrate (the opposite side of light entrance face：
Be lower surface in Fig. 1) mode form " n described later+Position and p+The situation at position ".
HBC type crystalline solar cells 100J involved by present embodiment at least possesses：Substrate 101, by discovery photoelectricity
The silicon metal for changing the first conductivity type (such as n-type semiconductor) of function is formed；With i type amorphous Si layers α 102 and i type amorphous Si
Layer γ 106, to cover the another side 101b (for being located at side opposite with light incident one side 101a (the first face) (indicated by an arrow)
Two faces) mode be configured on the substrate 101.I type amorphous Si layers α 102 and i type amorphous Si layers γ 106 are by interaction (office
Portion) it is configured to any one covering another side 101b therein.Thus, i types amorphous Si layer is configured to continuously cover another side
101b。
It is overlapping in order on an i type amorphous Si layers α (the first i types amorphous Si layer) in crystalline solar cells 100J
It is configured with amorphous Si layer β 103 (the second conductivity type amorphous Si layer, the position of the conductivity type (p-type) different from first conductivity type
) and the first metal layer 104 A.On the other hand, weighed in order on another i types amorphous Si layer γ 106 (the 2nd i types amorphous Si layer)
Folded amorphous Si layer δ 107 (the first conductivity type amorphous Si layer, the position being configured with the first conductivity type same conductivity (n-type)
) and second metal layer 108 B.
In addition, crystalline solar cells 100J possesses between amorphous Si layer β 103 and amorphous Si layer δ 107 by i type amorphous
The position 106B that Si is formed, position 106B is connected with the amorphous Si layer γ 106, and is configured as passing through the first metal layer
Between 104 and second metal layer 108.
In addition, crystalline solar cells 100J possesses by the amorphous with the first conductivity type identical conductivity type (n-type)
The position 107B that Si is formed, position 107B are connected with amorphous Si layer δ 107, and the position 106B that edge is made up of i type amorphous Si
Configuration.
Thus, as shown in figure 1, crystalline solar cells 100J can obtain plays machine in the electrode as adjacent position
I type amorphous Si layers γ 106 be present (more specifically, by i type amorphous between the first metal layer 104 and second metal layer 108 of energy
Si form position 106B) structure.
The i types amorphous Si layer γ 106 not only has position 106B, and is also present in the following table of the first metal layer 104
Between the amorphous Si layer δ 107 that the amorphous Si layer β 103 that face is contacted is contacted with the lower surface of second metal layer 108, from into
For the state (the reference 106A in reference picture 4) for splitting both electricity.
Therefore, the HBC type crystalline solar cells 100J for possessing said structure brings bowing from the lower side from Fig. 1
Independence (isolated) property depending between adjacent electrode (between the first metal layer 104 and second metal layer 108).Therefore, because
It is difficult to produce interfering between adjacent electrode, the HBC types crystallization solar energy involved by first embodiment of the invention
Battery 100J can obtain stable power generation characteristics.
In addition, as shown in figure 1, in HBC type solar cells 100J, it can be set to play the first gold medal of function as electrode
Belong to each surface (each outer surface) of layer 104 and second metal layer 108 almost profile in the same face.Thus, for example to cover
Cover these electrodes mode reflectance coating etc. is set in the case of, will not be from the He of the first metal layer 104 of the substrate as reflectance coating
Second metal layer 108 is influenceed by local bumps, therefore can keep the inner evenness of reflectance coating.Therefore, it is of the invention
HBC type crystalline solar cells 100J can possess uniform light screening effect in wider areal extent.
Because the first metal layer 104 and second metal layer 108 are used as electrode, therefore preferably conductance high (low-resistance)
Material, such as Ag, Al, Cu, Ti etc. can be enumerated.The first metal layer 104 and second metal layer 108 can also be in addition to monofilm
More than two layers of laminated film.
As the typical example of this laminated film, the laminated film of nesa coating (ITO etc.) and metal film (Ag etc.) can be enumerated.
(manufacture method of HBC type solar cells)
Below, the manufacture method of the HBC type crystalline solar cells 100J (100) shown in Fig. 1 is illustrated.Fig. 2~
Fig. 6 is schematic cross sectional views the step of representing to manufacture the HBC type crystalline solar cells shown in Fig. 1.Figure 17 is to represent Fig. 1 institutes
The flow chart of the manufacturing process for the HBC type crystalline solar cells shown.Hereinafter, by " amorphous Si " is abbreviated as " a-Si ".
Below, suitably using Figure 16 and Figure 20 of expression conventional example to the difference between conventional example and first embodiment
Illustrate.
Each operation for manufacturing the HBC types crystalline solar cells 100 involved by above-mentioned embodiment is carried out in detail
Explanation.First, in texture formation process, substrate 101 is carried out for example to use potassium hydroxide (KOH) or sodium hydroxide (NaOH)
Make the wet etch process of etchant.Also, remove the organic matter and gold on the substrate 101 of residual after treatment using fluorine nitric acid
Belong to pollutant.Thus, the one side 101a of substrate 101 and another side 101b are processed as to shape [first process with texture：Figure
2 (a)].
Under prescribed conditions, using CVD the substrate 101 for being processed into the above-mentioned shape with texture another side
The upper film forming i types a-Si layers α 102 of 101b [the second process：Fig. 2 (b)].
Then, under prescribed conditions, the i type a-Si layers using CVD on the another side 101b of substrate 101 is configured in
[the 3rd processes of film forming p-type a-Si layers β 103 on α 102：Fig. 2 (c)].
Further, under prescribed conditions, using sputtering method in a manner of blanket p-type a-Si layers β 103 film forming by Ag, Al,
[the 4th process of the first metal layer 104 of the compositions such as Cu, Ti：Fig. 2 (d)].
To being laminated the substrate formed with above-mentioned three layers (i type a-Si layers α 102, p-type a-Si layers β 103, the first metal layer 104)
101 mask Ms of the configuration with desired opening portion, p-type a-Si layers β 103 and first is at least all removed using dry etching method
Metal level 104 and form recess 105D [the 5th processes：Fig. 3].
Fig. 3 represents the degree that the another side 101b for being etched to substrate 101 of i type a-Si layers α 102 do not expose forming recess
105D situation.It so, it is possible inner bottom surface and substrate 101 as recess 105D by using residual i type a-Si layers α 102
The structure that another side 101b does not expose, so as to prevent the another side 101b of substrate 101 pollution and damage, and can also be whole
Covering i type a-Si layers α 102 p-type a-Si layers β 103 is removed, therefore preferably.
Then, using same mask M used in preceding dry etching method and by mask M opening portion, providing
Under the conditions of, utilize CVD film forming i type a-Si layers γ in a manner of the inner surface (inner bottom surface and medial surface) for covering recess 105D
106 [the 6th process：Fig. 4].
Thus, the position of the medial surface by the position 106A and covering recess 105D of covering recess 105D inner bottom surface is formed
The i type a-Si layers γ 106 that 106B is formed.In other words, i types a-Si layers γ 106 is to have the position being made up of i type a-Si layers (to cover
The position of lid recess 105D medial surface) 106B structure.
As shown in figure 4, the i types a-Si layers γ 106 compared with the depth of recess 105D opening portion thickness (with i types
A-Si layers α 102 thickness is equal) it is sufficiently thin in the case of, i type a-Si layers γ 106 top formed with i type a-Si layers γ
Correspondingly depth and inboard width be reducing for 106 thickness, more smaller than recess 105D recess 106D.
Then, using the same mask M used in preceding dry etching method and by mask M opening portion, advising
Under fixed condition, CVD film forming n-type a-Si layers δ 107 in a manner of the inner side (inner bottom surface and medial surface) for covering recess 106D is utilized
[the 7th process：Fig. 5].
Thus, formed by covering recess 106D inner bottom surface 106A position 107A and covering recess 106D medial surface
The n-type a-Si layers δ 107 that 106B position 107B is formed.In other words, n-type a-Si layers δ 107 exists and is made up of n-type a-Si layers
The structure at position (covering recess 106D medial surface 106B position) 107.
As shown in figure 5, the n-type a-Si layers δ 107 compared with the depth of recess 106D opening portion thickness (with p-type a-
Si layers β 103 thickness is equal) it is sufficiently thin in the case of, n-type a-Si layers δ 107 top formed with n-type a-Si layers δ 107
Thickness correspondingly depth and inboard width be reducing, more smaller than recess 106D recess 107D.
Then, using same mask M used in preceding dry etching method and by mask M opening portion, providing
Under the conditions of, using sputtering method in a manner of the inner surface (inner bottom surface and medial surface) for covering recess 107D film forming by Ag, Al, Cu,
[the 8th process of second metal layer 108 of the compositions such as Ti：Fig. 6 (a)].Thus, formed to fill up the side of recess 107D inside
The second metal layer 108 that formula is formed.
Finally, the mask M [Fig. 6 (b)] being oppositely disposed with substrate 101 is removed.
By implementing above-mentioned each operation in order, Fig. 1 HBC type crystalline solar cells 100J (100) can be made.
In addition, according to above-mentioned 8th process, to cover the position being made up of i type a-Si layers, (covering part 105D's is interior
The position of side) 106B exposed division 106C and the position (portion of covering recess 106D medial surface that is made up of n-type a-Si layers
Position) 107B exposed division 107C mode be attached with second metal layer 108 in the case of, be preferably ground as needed etc.
Reason.
In the manufacture method of above-mentioned HBC types crystalline solar cells, trilaminate (i types are carried out using a mask M
A-Si layers α 102, p-type a-Si layers β 103, the first metal layer 104) etching process [the 5th process：Fig. 3], to by the etching
Manage etching process [the 5th process of the recess formed：Fig. 3] and the recess for being formed by the etching process i types a-Si
Layer γ 106 film forming [the 6th process：Fig. 4], n-type a-Si layers δ 107 film forming [the 7th process：Fig. 5] and second metal layer
108 film forming [the 8th process：Fig. 6 (a)].
In addition, in the manufacture method of the invention described above, mask M selection is critically important.Mask M is made up of metal material,
Formed with opening portion corresponding with above-mentioned recess 105D.For mask M, it is desirable to the etching process of above-mentioned trilaminate
The tolerance of used process gas and technological temperature and to process gas and work used in CVD film forming or spatter film forming
The tolerance of skill temperature.
In order to meet this condition, as the metal material for forming mask M, such as preferred aluminium, titanium, stainless steel etc..
Figure 16 is the flow chart for the manufacturing process for representing the solar cell involved by conventional example (Figure 20), and Figure 17 is to represent
The flow chart of the manufacturing process of solar cell involved by (Fig. 1~Fig. 6) of the invention.
As shown in figure 16, the position A (n-type amorphous Si layer 1003) and position B in existing HBC types crystalline solar cells
(p-type amorphous Si layer 1007) is via formation after the process flow of Figure 20 (a)~Figure 20 (j).That is, according to by " i types a-Si
Film forming, n-type a-Si film forming, photoresist are coated with and patterned, etch, photoresist peel off, etch stop layer film forming simultaneously
Patterning, i type a-Si film forming, p-type a-Si film forming, photoresist are coated with and patterned, etch, photoresist is peeled off, erosion
Barrier layer is carved to peel off, only in the i type a-Si film forming of separation unit " 13 processes forming are handled and are manufactured in order.Existing
In some manufacture methods, at least need to carry out coating and stripping process three times, it is desirable to complicated process flow.
On the other hand, as shown in figure 17, in the HBC type crystalline solar cells involved by embodiments of the present invention
P-type a-Si layers β 103 equivalent to position A and the n-type a-Si layers δ 107 equivalent to position B pass through the process shown in Fig. 2~Fig. 6
Flow and formed.It is not necessary according to the invention that coating and stripping process, only need vacuum technology, therefore can realize all the time
Simple process flow.
That is, according to the manufacture method of above-mentioned HBC types crystalline solar cells, without using necessary light in the prior art
Carve or etching etc. is in the case of skill and technique, can be by a-Si layers (β) 103 and second that the lower surface of the first metal layer 104 is contacted
The state (patterned state) of electricity segmentation is set between the a-Si layers (δ) 107 that the lower surface of metal level 108 is contacted.Tool
For body, the structure that i type a-Si layers (γ) 106 between a-Si layers (β) 103 and a-Si layers (δ) 107 be present can be obtained.That is,
It is adjacent in the vertical view from the rear side of HBC type crystalline solar cells that the present invention contributes to manufacture stably to obtain
Electrode between independence (isolated) property HBC type crystalline solar cells.
Due to solar-electricity can be crystallized to make HBC types by more few process number compared with existing manufacture method
Pond, therefore compared with existing manufacture method, HBC types crystalline solar cells of the invention can significantly cut down " high price
Photo-mask process and etching work procedure ".Therefore, according to the present invention, the complicated procedures of forming due to it can cut down in the past necessary to, therefore can
Manufactured under more stable process management.That is, according to first embodiment, due to being not required to the manufacture device to ask an exorbitant fare, because
This present invention helps to provide cheap HBC type crystalline solar cells.
More specifically, the present invention brings the HBC type crystalline solar cells of process number when can significantly cut down manufacture
Manufacture method.Particularly, manufacture method of the invention is implemented without the vacuum system all the time of wet processing.
Therefore, the present invention bring process number when can significantly cut down manufacture, can stably obtain it is adjacent during vertical view
Independence (isolated) property between electrode and it can stably be obtained without need for the HBC types crystallization of the electrode of patterned process too
The manufacture method of positive energy battery.Therefore, the present invention helps to construct the low cost manufacture production of HBC type crystalline solar cells
Line.
<Second embodiment>
Fig. 7 is the structure to the HBC type crystalline solar cells 200J (200) involved by second embodiment of the present invention
The figure illustrated.Fig. 8~Figure 12 is schematically cuing open the step of representing to manufacture the HBC type crystalline solar cells shown in Fig. 7
View.
From passing through etching process (the 5th process：Fig. 9) it is formed at trilaminate (i type a-Si layers α 202, p-type a-Si
Layer 203, the first metal layer 204) on recess 205D the observation of side profile direction vpg connection, involved by second embodiment
HBC type crystalline solar cells 200J it is different from above-mentioned first embodiment.
More specifically, HBC types crystalline solar cells 200J (200) includes what is be made up of the silicon metal of n-type semiconductor
Substrate 201, i type a-Si layers α 202, (conductivity types different from substrate) p-type a-Si layers β 203, the first metal layer 204, i types a-
Si layers γ 206, (with substrate identical conductivity type) n-type a-Si layers δ 207 and second metal layer 208.
That is, in the case of first embodiment, removed in a manner of the another side 101b to make substrate 101 does not expose
I type a-Si layers α 102 and form recess 105D.On the other hand, in the case of second embodiment, by insertion three layer by layer
Laminate (i type a-Si layers α 202, p-type a-Si layers β 203, the first metal layer 204) is so that the another side 201b (second of substrate 201
Face) mode exposed removes i type a-Si layers α 202 and forms recess 205D.
Thus, the HBC type crystalline solar cells 200J involved by second embodiment brings following manufacture method：It is logical
The another side 201b for crossing detection substrate 201 exposes and judges the end of the 5th process, so as to be easily reduced the inclined of the process
Difference.
In addition, in addition to due to the difference of the shape from above-mentioned recess 205D side profile direction, second is real
It is same with first embodiment to apply mode.Therefore, can be by representing Figure 17 the manufacturing step as shown in Fig. 8~Figure 12
The flow chart of the manufacturing process of HBC type crystalline solar cells involved by shown first embodiment, it is real to make second
Apply the HBC type crystalline solar cells 200J (200) involved by mode.
<3rd embodiment>
Figure 13 is the knot to the HBC type crystalline solar cells 300J (300) involved by third embodiment of the present invention
The figure that structure illustrates.HBC type crystalline solar cells 300J involved by 3rd embodiment is above-mentioned first embodiment
Variation, the configuration of p-type-Si layers and n-type a-Si layers is being set on this point opposite, it is different from first embodiment.
More specifically, HBC types crystalline solar cells 300J (300) includes what is be made up of the silicon metal of n-type semiconductor
Substrate 301, i type a-Si layers α 302, (with substrate identical conductivity type) n-type a-Si layers β 303, the first metal layer 304, i types a-
Si layers γ 306, (conductivity types different from substrate) p-type a-Si layers δ 307 and second metal layer 308.
That is, the trilaminate originally formed in the first embodiment is " i type a-Si layers α 102, (different from substrate
Conductivity type) p-type a-Si layers β 103, the first metal layer 104 ", be in the third embodiment " i type a-Si layers on the other hand
α 302, (with substrate identical conductivity type) n-type a-Si layers β 303, the first metal layer 304 ".In addition, instead of being formed after recess
(with substrate identical conductivity type) n-type a-Si layers δ 107 of the first embodiment of film forming, formed with (different from substrate leads
Electric type) p-type a-Si layers δ 307.
In this way, crystallize the sun even in the HBC types that the configuration of p-type a-Si layers and n-type a-Si layers is set to opposite structure
In energy battery 300J, it can also obtain and above-mentioned first embodiment identical action effect.
In addition, in addition to due to the configuration of p-type a-Si layers and n-type a-Si layers is set into the difference of opposite structure,
3rd embodiment is same with first embodiment.Therefore, it is possible to by representing involved by the first embodiment shown in Figure 17
HBC type crystalline solar cells manufacturing process flow chart, come make involved by the 3rd embodiment HBC types crystallization too
Positive energy battery 300J (300).
<4th embodiment>
Figure 14 is the knot to the HBC type crystalline solar cells 400J (400) involved by the 4th embodiment of the present invention
The figure that structure illustrates.HBC type crystalline solar cells 400J involved by 4th embodiment is above-mentioned second embodiment
Variation, the configuration of p-type a-Si layers and n-type a-Si layers is being set on this point opposite, it is different from second embodiment.
More specifically, HBC types crystalline solar cells 400J (400) includes what is be made up of the silicon metal of n-type semiconductor
Substrate 401, i type a-Si layers α 402, (with substrate identical conductivity type) n-type a-Si layers β 403, the first metal layer 404, i types a-
Si layers γ 406, (conductivity types different from substrate) p-type a-Si layers δ 407 and second metal layer 408.
That is, the trilaminate originally formed in this second embodiment is " i type a-Si layers α 202, (different from substrate
Conductivity type) p-type a-Si layers β 203, the first metal layer 204 ", be " i type a-Si layers in the 4th embodiment on the other hand
α 402, (with substrate identical conductivity type) n-type a-Si layers β 403, the first metal layer 404 ".In addition, instead of being formed after recess
(with substrate identical conductivity type) n-type a-Si layers δ 207 of the second embodiment of film forming, formed with (different from substrate leads
Electric type) p-type a-Si layers δ 407.
In this way, crystallize the sun even in the HBC types that the configuration of p-type a-Si layers and n-type a-Si layers is set to opposite structure
In energy battery 400J, the action effect same with above-mentioned second embodiment can be also obtained.
In addition, in addition to due to the configuration of p-type a-Si layers and n-type a-Si layers is set into the difference of opposite structure,
4th embodiment is same with second embodiment.Therefore, it is same with second embodiment, can be by representing shown in Figure 17
The flow chart of the manufacturing process of HBC type crystalline solar cells involved by first embodiment, to make the 4th embodiment
Involved HBC type crystalline solar cells 400J (400).
<5th embodiment>
Figure 15 is the knot to the HBC type crystalline solar cells 500J (500) involved by the 5th embodiment of the present invention
The figure that structure illustrates.HBC crystalline solar cells 500J involved by 5th embodiment for above-mentioned first embodiment~
The variation of 4th embodiment, eliminating the 4th process to form the first metal layer and the formation gold after the 7th process
It is on this point of belonging to layer, different from first embodiment~the 4th embodiment.
More specifically, HBC types crystalline solar cells 500J (500) includes what is be made up of the silicon metal of n-type semiconductor
Substrate 501, i type a-Si layers α 502, (conductivity types different from substrate) p-type a-Si layers β 503, (metal of the first metal layer 504
Layer), i type a-Si layers γ 506, (with substrate identical conductivity type) n-type a-Si layers δ 507 and the (metal of second metal layer 508
Layer).
That is, by taking first embodiment as an example, after carrying out the process of the first process~the 3rd, omit the 4th process and implement the
Five processes.That is, after the 3rd process is carried out, the first metal layer 504 is not formed.Thus, it is not necessary to the first metal layer 504
Dry-etching is carried out, it is only amorphous Si (double-layer structure body, i type a-Si layers α 502 and p-type a-Si layers that can make dry-etching object
β503).Therefore, compared with the situation comprising the etching condition for carrying out dry-etching to metal level, can easily select
Dry etch conditions.Can by by the mask M shown in Fig. 3 to amorphous Si (i type a-Si layers α 502, p-type a-Si layers β 503)
Dry-etching is carried out, so as to form recess (equivalent to the recess 105D in Fig. 3).
Then, it is same with first embodiment to implement the 6th process, in the interior table of the recess formed by above-mentioned dry-etching
I type a-Si layers γ 506 is formed on face.
Then, the 7th process is implemented, the recess formed with i type a-Si layers γ 506 on inner surface is internally formed n-type
A-Si layers δ 507.
On this point of n-type a-Si layers δ 507 for the inner surface that the 5th embodiment fills up recess in formation and the first embodiment party
Formula~the 4th embodiment is different.
Then, in the 8th process, using mask M and using sputtering method in p-type a-Si layers β 503 and n-type a-Si layers δ 507
Upper formation the first metal layer 504 and second metal layer 508.In addition, the formation side of the first metal layer 504 and second metal layer 508
Method (formation means) is not limited to sputtering method, can use electrode forming method (electrode known to print process or gold-plated method etc.
Formation means).
In addition, structure and manufacture method illustrated in above-mentioned 5th embodiment can also be applied to the second embodiment party
In formula, the 3rd embodiment and the 4th embodiment.Specifically, can also be by penetrating double-layer structure body (i type a-Si layers α
502 and p-type a-Si layers β 503) so that the mode that the another side 501b (the second face) of substrate 501 exposes removes i type a-Si layers α 502
To form recess.Alternatively, it is also possible to which the configuration of p-type a-Si layers and n-type a-Si layers is set into opposite.
<Manufacture device>
For example, carry out institute in the embodiment of above-mentioned first embodiment~the 4th using the manufacture device 700 shown in Figure 18
The all process steps (the first process~the 8th process) of application.But below to making the HBC type knots involved by first embodiment
The situation of brilliant solar cell 100J (100) illustrates.
For the manufacture device 700 shown in Figure 18, each process chamber is configured as being connected in series, and carries by silicon metal structure
Into substrate 101 pallet (not shown) sequentially through each process chamber.Thus, i type a-Si layers α is made on the substrate 101
102nd, p-type a-Si layers β 103, the first metal layer 104, recess 105D, i type a-Si layers γ 106, n-type a-Si layers δ 107 and the second gold medal
Belong to layer 108.
Manufacture device 700 possesses loading room (L) 751, heating chamber (H) 752, film forming room of film forming inlet (EN) 753, first
(S1) film forming room (S3) 756 of the 754, second film forming room (S2) the 755, the 3rd, mask installation room (MS) 757, etching chamber (EC) 758,
Film forming room (S6) 761 of 4th film forming room (S4) the 759, the 5th film forming room (S5) the 760, the 6th, film forming downstream chamber (EX) 762, conveyance
Room (T) 763 and taking-up room (UL) 764.
Moved into from loading room (L) 751 on the pallet (not shown) come on the front and the back side of the substrate 101 carried in advance
Formed textured.In the state of substrate 101 is equipped on pallet (not shown), substrate 101 can only be from loading room (L) 751 direction
Room (UL) 764 is taken out to move along clockwise direction.That is, in the manufacture device 700 shown in Figure 18, it is equipped on the base of pallet (not shown)
Plate 101 to reverse direction [from room (UL) 764 is taken out towards the direction for loading room (L) 751] It is not necessary to return.Therefore, Tu18Suo
The manufacture device 700 shown is excellent in terms of production.
The substrate 101 being fitted into room 751 is moved to after loading room 751 and turning into desired reduced atmosphere from loading room
(L) 751 it is moved in heating chamber (H) 752, and is carried out in place A by temperature control device (not shown) at heating
Reason.It is moved to as the substrate 101 after desired temperature in film forming inlet (EN) 753.With in next first film forming room
(S1) atmospheric condition when i type a-Si layer α 102 are formed in 754 adjusts the film forming inlet 753 for containing substrate 101 in consistent manner
Atmosphere.Film forming inlet 753 has temperature control device (not shown), so as to so that the temperature of substrate 101 is making i types a-
The mode of 102 preferable temperature of Si layers α carries out temperature control.
Then, the substrate 101 adjusted through temperature is moved in the first film forming room (S1) 754, passes through place C.Thus, it is sharp
Only i type a-Si layers α 102 is formed with CVD in the another side 101b sides of substrate 101.Thereby, it is possible to obtain in the another of substrate 101
The simultaneously state formed with a-Si layers α 102 on 101b.The state is that the HBC types of the structure shown in Fig. 2 (b) crystallize solar energy
Battery 100B.
Then, the substrate 101 formed with i type a-Si layers α 102 is moved in the second film forming room (S2) 755, passes through place
D.Thus, only p-type a-Si layers β 103 is formed in the another side 101b sides of substrate 101 using CVD.Thereby, it is possible to obtain in base
State formed with p-type a-Si layers β 103 on the another side 101b of plate 101.The state is the HBC of the structure shown in Fig. 2 (c)
Type crystalline solar cells 100C.
Then, the substrate 101 formed with i type a-Si layers (α) 102 and p-type a-Si layers (β) 103 is moved to the 3rd film forming
In room (S3) 756, pass through place E.Thus, p-type a-Si layer (β) 103 of the sputtering method in the another side 101b sides of substrate 101 is utilized
Upper formation the first metal layer 104.Thereby, it is possible to obtain to press on the i type a-Si layers (α) 102 of the another side 101b sides of substrate 101
Order overlaps to form the state of p-type a-Si layers (β) 103 and the first metal layer 104.The state is the structure shown in Fig. 2 (d)
HBC type crystalline solar cells 100D.
Then, formed with trilaminate [i type a-Si layers (α) 102, p-type a-Si layers (β) 103, the first metal layer 104]
Substrate 101 be moved in mask installation room (MS) 757, and substrate 101 is located at place F.Here, seen from substrate 101
In the superjacent air space for the trilaminate examined, it is configured with the position for separating predetermined distance from substrate 101 and is opened with desired
The mask M of oral area.The so configured state for having mask M is the HBC type crystalline solar cells of the structure shown in Fig. 3 (a)
100E.In addition, mask M is fixed on the pallet (not shown) for being equipped with substrate 101, and can together be moved with substrate 101
It is dynamic.
Then, in the state of being configured with mask M in the top of substrate 101, formed with trilaminate [i type a-Si layers (α)
102nd, p-type a-Si layers (β) 103, the first metal layer 104] substrate 101 be moved in etching chamber (EC) 758, substrate 101
In place G.Here, by carrying out dry etching method via mask M opening portion, so as to form recess to trilaminate
105D.Thus, p-type a-Si layers β 103 and the first metal layer 104 are at least all removed, and i type a-Si layers α 102 is lost
The degree do not exposed to the another side 101b of substrate 101 is carved, so as to obtain the state formed with recess 105D.The state is
The HBC type crystalline solar cells 100F of structure shown in Fig. 3 (b).
Then, the substrate 101 formed with recess 105D is moved to the 4th film forming room (S4) 759 in trilaminate
In, pass through place H.Thus, by identical mask M and CVD is utilized, to cover recess 105D inner surface (inner bottom surface
105th, medial surface 105B) mode form i type a-Si layers γ 106.Thereby, it is possible to obtain formed with covering by etching three layer by layer
Laminate and the i type a-Si layers γ 106 of the recess 105D inner surface state set.As a result, formed by i type a-Si layers γ
The 106 recess 106Ds more smaller than recess 105D formed.In recess 106D inside (inner bottom surface 106A, medial surface 106B), i
Type a-Si layers γ 106 exposes.The state is the HBC type crystalline solar cells 100G of the structure shown in Fig. 4.
Then, formed with i type a-Si layers γ in a manner of covering the inner surface for the recess 105D for being arranged at trilaminate
106 substrate is moved in the 5th film forming room (S5) 760, passes through place I.Thus, by identical mask M and CVD is utilized
Method, the shape in a manner of covering the recess 106D being made up of i type a-Si layers γ 106 inner surface (inner bottom surface 106A, medial surface 16B)
Into n-type a-Si layers δ 107.Thereby, it is possible to obtain the inner surface formed with covering by the recess 106D formed of i type a-Si layers γ 106
N-type a-Si layers δ 107 state.As a result, form the recess more smaller than recess 106D being made up of n-type a-Si layers δ 107
107D.At recess 107D inside (inner bottom surface 107A, medial surface 107B), n-type a-Si layers δ 107 exposes.The state is Fig. 5 institutes
The HBC type crystalline solar cells 100H for the structure shown.
Then, to cover in a manner of the recess 106D formed of i type a-Si layers γ 106 inner surface formed with n-type a-Si
Layer δ 107 substrate 101 is moved in the 6th film forming room (S6) 761, passes through place J.Thus, identical mask M and profit are passed through
With sputtering method, to cover the recess 107D's being made up of n-type a-Si layers δ 107 inner surface (inner bottom surface 107A, medial surface 107B)
Mode forms second metal layer 108.Thus, obtain and formed in a manner of filling up the recess 107D being made up of n-type a-Si layers δ 107
There is the state of second metal layer 108.The state is the HBC type crystalline solar cells 100I of the structure shown in Fig. 6 (a).
According to above process, i type a-Si layers α 102, p-type a-Si layers β 103, the first metal layer are formed on the substrate 101
104th, recess 105, i type a-Si layers γ 106, n-type a-Si layers δ 107 and second metal layer 108.Afterwards, substrate 101 leads in order
Cross the place K of film forming downstream chamber (EX) 762, the place L of carrying room (T) 763 and the place M for taking out room (UL) 764.Thus, quilt
Take out of the outside of manufacture device., can be with this point it is possible to unload mask M from substrate 101 in film forming downstream chamber (EX) 762
After the outside of manufacture device is taken out of mask M is unloaded from substrate 101.
For example above-mentioned all works can also be carried out using the manufacture device shown in Figure 19 to replace Figure 18 manufacture device
Sequence (the first process~the 8th process).Figure 19 manufacture device is to be provided with multiple concentrating type devices into film module etc..Scheming
In 19, reference c1 is load chamber (moving into room), and reference c12 is relief chamber's (taking out of room).Using being arranged at atmospheric pressure
The manipulator 31 of side, move into load chamber c1 as the substrate of handled object or taken out of from relief chamber c12 as processed
The substrate of body.
Load chamber c1 and relief chamber c12 is connected with the first carrying room FX and the second carrying room RX, each carrying room FX, RX difference
Possesses the manipulator 32,33 for transporting substrate.Two carrying rooms FX, RX are connected by medial compartment MX.In the first carrying room FX
On be connected with load chamber c1, four chambers c2, c3, c10, c11 and relief chamber c12.Six are also associated with the second carrying room RX
Individual chamber c4~c9.
, can be by replacing load chamber c1 [loading room (L) 751], chamber c2 respectively in the manufacture device shown in Figure 19
[heating chamber (H) 752], chamber c3 [film forming inlet (EN) 753], chamber c4 [the first film forming room (S1) 754], chamber c5 [
Two film forming room (S2) 755], chamber c6 [the 3rd film forming room (S3) 756], chamber c7 [mask install room (MS) 757], chamber c8
[etching chamber (EC) 758], chamber c9 [the 4th film forming room (S4) 759], chamber c10 [the 5th film forming room (S5) 760], chamber c11
[the 6th film forming room (S6) 761], relief chamber c12 [film forming downstream chamber (EX) 762/ take out room (UL) 764], carrying room FX, RX, in
Compartment MX [carrying room (T) 763], thus it is same with Figure 18 manufacture device, implement above-mentioned all process steps (the first process~8th
Process).Here, the title of the entitled each room corresponding in Figure 18 manufacture device represented with bracket [].When in each room
When carrying out various processing, the upper surface for being configured as substrate 101 is processed surface 101b.
For example, carry out the situation of above-mentioned all process steps (the first process~the 8th process) in the manufacture device using Figure 19
Under, can by suitably by carrying room FX, RX, medial compartment MX by c1 → c2 → c3 → c4 → c5 → c6 → c7 → c8 → c9 →
C10 → c11 → c12 order moving substrate 101, so as to provide the manufacture method of the HBC type crystalline solar cells of the present invention.
Here, each indoor various processing are configured to one, however it is not limited to Figure 19 configuration.
Industrial applicability
The present invention can be widely used in HBC type crystalline solar cells.For example, the generating as per unit area is imitated
Rate is high and can also seek the solar cell of the type of cost degradation, preferably using this HBC types crystalline solar cells.
Description of reference numerals
100HBC type crystalline solar cells；101 substrates；101a one sides (the first face)；101b another sides (the second face)；
102 amorphous Si layer α；103 amorphous Si layer β；104 the first metal layers；105 recesses；106 amorphous Si layer γ；107 amorphous Si layer δ；
108 second metal layers.
Claims (9)
1. a kind of manufacture method of HBC types crystalline solar cells, possesses in order：
The substrate formed using the silicon metal by the first conductivity type, opposite relative to the one side that the substrate is located at light is incident
Another surface side of side, overlap to form in order by the amorphous Si layer α of i types, the conductivity type different from first conductivity type it is non-
Three layers of the process that brilliant Si layers β and the first metal layer are formed；
By using the etching method of mask, at least all remove the amorphous Si layer β and the first metal layer and form recess
Process；
By using the membrane formation process of the mask, to form the non-of i types in a manner of the inner bottom surface and medial surface that cover the recess
Brilliant Si layers γ；
By using the membrane formation process of the mask, to cover the amorphous Si layer γ set on the inner bottom surface of the recess and medial surface
Mode, form the process with the amorphous Si layer δ of the first conductivity type identical conductivity type；With
The process that second metal layer is formed in a manner of filling up in the recess formed by amorphous Si layer δ coverings.
2. a kind of manufacture method of HBC types crystalline solar cells, possesses in order：
The substrate formed using the silicon metal by the first conductivity type, opposite relative to the one side that the substrate is located at light is incident
Another surface side of side, overlap to form in order by i types amorphous Si layer α and the conductivity type different from first conductivity type it is non-
Two layers of the process that brilliant Si layers β is formed；
The process at least all removing the amorphous Si layer β by using the etching method of mask and forming recess；
By using the membrane formation process of the mask, to form the non-of i types in a manner of the inner bottom surface and medial surface that cover the recess
Brilliant Si layers γ process；
By using the membrane formation process of the mask, to cover the amorphous Si layer γ set on the inner bottom surface of the recess and medial surface
Mode, form the process with the amorphous Si layer δ of the first conductivity type identical conductivity type；With
The process that metal level is formed on the amorphous Si layer β and the amorphous Si layer δ.
3. a kind of manufacture method of HBC types crystalline solar cells, possesses in order：
The substrate formed using the silicon metal by the first conductivity type, opposite relative to the one side that the substrate is located at light is incident
Another surface side of side, the amorphous Si layer α, non-with the first conductivity type identical conductivity type by i types is overlapped to form in order
Three layers of the process that brilliant Si layers β and the first metal layer are formed；
The amorphous Si layer β and the first metal layer are at least all removed by using the etching method of mask and form recess
Process；
By using the membrane formation process of the mask, to form i type amorphous in a manner of the inner bottom surface and medial surface that cover the recess
Si layers γ process；
By using the membrane formation process of the mask, to cover the amorphous Si layer γ set on the inner bottom surface of the recess and medial surface
Mode formed the conductivity type different from first conductivity type amorphous Si layer δ process；With
The process that second metal layer is formed in a manner of filling up in the recess formed by amorphous Si layer δ coverings.
4. a kind of manufacture method of HBC types crystalline solar cells, possesses in order：
The substrate formed using the silicon metal by the first conductivity type, opposite relative to the one side that the substrate is located at light is incident
Another surface side of side, overlap to form in order by the amorphous Si layer α of i types and non-with the first conductivity type identical conductivity type
Two layers of the process that brilliant Si layers β is formed；
The process at least all removing the amorphous Si layer β by using the etching method of mask and forming recess；
By using amorphous of the membrane formation process of the mask to form i types in a manner of the inner bottom surface and medial surface that cover the recess
Si layers γ process；
By using the membrane formation process of the mask, to cover the amorphous Si layer γ set on the inner bottom surface of the recess and medial surface
Mode formed the conductivity type different from first conductivity type amorphous Si layer δ process；With
The process that metal level is formed on the amorphous Si layer β and the amorphous Si layer δ.
5. the manufacture method of the HBC type crystalline solar cells according to any one of Claims 1-4,
The process for forming the recess removes the amorphous Si layer α of the i types in a manner of the another side of the substrate is not exposed
And form the recess.
6. the manufacture method of the HBC type crystalline solar cells according to any one of Claims 1-4,
Formed the recess process removed in a manner of exposing the another side of the substrate i types amorphous Si layer α and
Form the recess.
7. the manufacture method of the HBC type crystalline solar cells according to claim 1 or 3,
Using same parts to be used as the first metal layer and the second metal layer.
8. a kind of HBC types crystalline solar cells, possess：
Substrate, it is made up of the silicon metal of the first conductivity type；
The amorphous Si layer γ of amorphous Si layer α and the i type of i types, one incident with light is located at relative to the substrate with continuous cover
The mode of the another side of the opposite side in face configures；
The amorphous Si layer β of the conductivity type different from first conductivity type, to match somebody with somebody in a manner of covering the amorphous Si layer α of the i types
Put；
With the amorphous Si layer δ of the first conductivity type identical conductivity type, to match somebody with somebody in a manner of covering the amorphous Si layer γ of the i types
Put；
The first metal layer, covered in a manner of covering the amorphous Si layer β；With
Second metal layer, configured in a manner of covering the amorphous Si layer δ,
The HBC types crystalline solar cells have between the amorphous Si layer β and the amorphous Si layer δ：
The position being made up of the amorphous Si of i types, it is connected with the amorphous Si layer γ, and is configured as passing through first metal
Between layer and the second metal layer；With
By the position formed with the amorphous Si of the first conductivity type identical conductivity type, it is connected with the amorphous Si layer δ, and
Configured along the position being made up of the amorphous Si of i types.
9. a kind of HBC types crystalline solar cells, possess：
Substrate, it is made up of the silicon metal of the first conductivity type；
The amorphous Si layer γ of amorphous Si layer α and the i type of i types, one incident with light is located at equivalent to the substrate with continuous cover
The mode of the another side of the opposite side in face configures；
With the amorphous Si layer β of the first conductivity type identical conductivity type, to match somebody with somebody in a manner of covering the amorphous Si layer α of the i types
Put；
The amorphous Si layer δ of the conductivity type different from first conductivity type, to match somebody with somebody in a manner of covering the amorphous Si layer γ of the i types
Put；
The first metal layer, covered in a manner of covering the amorphous Si layer β；With
Second metal layer, configured in a manner of covering the amorphous Si layer δ,
The HBC types crystalline solar cells have between the amorphous Si layer β and the amorphous Si layer δ：
The position being made up of the amorphous Si of i types, it is connected with the amorphous Si layer γ, and is configured as passing through first metal
Between layer and the second metal layer；With
The position being made up of the amorphous Si of the conductivity type different from first conductivity type, it is connected with the amorphous Si layer δ, and
Configured along the position being made up of the amorphous Si of i types.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016137452A JP2018010916A (en) | 2016-07-12 | 2016-07-12 | Method for manufacturing hbc type crystal solar cell, and hbc type crystal solar cell |
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| CN113678265A (en) * | 2019-03-29 | 2021-11-19 | 株式会社钟化 | Method for manufacturing solar cell, semi-finished solar cell substrate and solar cell |
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| CN113823705A (en) * | 2021-11-24 | 2021-12-21 | 陕西众森电能科技有限公司 | Heterojunction back contact solar cell and preparation method thereof |
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| US20090293948A1 (en) * | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
| CN103283033A (en) * | 2010-12-29 | 2013-09-04 | 三洋电机株式会社 | Method for manufacturing solar cell and solar cell |
| JP2014075526A (en) * | 2012-10-05 | 2014-04-24 | Sharp Corp | Photoelectric conversion element and photoelectric conversion element manufacturing method |
| WO2014112500A1 (en) * | 2013-01-16 | 2014-07-24 | シャープ株式会社 | Photoelectric conversion element and method for producing photoelectric conversion element |
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| US20090293948A1 (en) * | 2008-05-28 | 2009-12-03 | Stichting Energieonderzoek Centrum Nederland | Method of manufacturing an amorphous/crystalline silicon heterojunction solar cell |
| CN103283033A (en) * | 2010-12-29 | 2013-09-04 | 三洋电机株式会社 | Method for manufacturing solar cell and solar cell |
| JP2014075526A (en) * | 2012-10-05 | 2014-04-24 | Sharp Corp | Photoelectric conversion element and photoelectric conversion element manufacturing method |
| WO2014112500A1 (en) * | 2013-01-16 | 2014-07-24 | シャープ株式会社 | Photoelectric conversion element and method for producing photoelectric conversion element |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113678265A (en) * | 2019-03-29 | 2021-11-19 | 株式会社钟化 | Method for manufacturing solar cell, semi-finished solar cell substrate and solar cell |
| CN113678265B (en) * | 2019-03-29 | 2024-03-26 | 株式会社钟化 | Solar cell manufacturing method, semi-finished solar cell substrate and solar cell |
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