CN107611044A - A kind of silk screen holiday glassivation mould and its process - Google Patents
A kind of silk screen holiday glassivation mould and its process Download PDFInfo
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- CN107611044A CN107611044A CN201710815321.0A CN201710815321A CN107611044A CN 107611044 A CN107611044 A CN 107611044A CN 201710815321 A CN201710815321 A CN 201710815321A CN 107611044 A CN107611044 A CN 107611044A
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- single crystal
- stainless steel
- silicon single
- crystal flake
- glass
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Abstract
The invention discloses a kind of silk screen holiday glassivation mould, including silicon single crystal flake, stainless steel cloth half tone, stainless steel spatula, silicon single crystal flake is provided with mesa etch groove, stainless steel cloth half tone is with boss and the saturating region of leakage, stainless steel cloth half tone side is provided with boss, leak the arrangement in region, position is completely consistent with the mesa etch groove region of silicon single crystal flake one side with geomery, boss both sides adjacent position, which is provided with, leaks saturating region, stainless steel spatula side is provided with the high blades of 2 5CM, boss protrusion height is short compared with silicon single crystal flake mesa etch groove depth 35 microns, a kind of silk screen holiday glass passivation process method, comprise the following steps：To version；Upper glass paste, blade coating；The shaping of glass paste, off-grid version；Glass scorification, the present invention set boss to prevent excessive glass is pasted from scraping inoperative position among glass guide channel.
Description
Technical field
The present invention relates to a kind of silk screen holiday glass passivation process method, applied to semiconductor chip manufacture and wafer processing
Field, it is specifically for use in the making application of mesa technology device.
Background technology
Glassivation typically has knife scraping method glassivation, electrophoresis glassivation, and knife scraping method glassivation passes through in silicon list
Wafer surface is scraped glass paste in glass guide channel using scraper, then more simple by high temp glass sinter molding, operating method
Single, equipment investment is seldom, but the scratch of distinct program easily occurs in silicon single crystal flake piece surface, and silicon single crystal flake surface need to be wiped except nothing
Glass dust is imitated, mesa etch trench bottom leaves thicker invalid glass dust, and glass strain is larger；Electrophoresis glassivation, passes through electricity
Swimming equipment will adsorb certain thickness glass dust in silicon single crystal flake mesa etch groove, then pass through high temp glass sinter molding, silicon
Fine along being protected close to surface location on single-chip mesa etch groove, still, silicon chip surface has prominent glass dust, influences subsequent optical
The making of carving technology, costly, mesa etch trench bottom leaves thicker invalid glass dust to equipment, and glass strain is larger.
The content of the invention
It is an object of the invention to provide a kind of silk screen holiday glassivation mould and its process.
The technical solution adopted by the present invention is：
A kind of silk screen holiday glassivation mould, it is characterised in that：Including：Silicon single crystal flake, stainless steel cloth half tone, stainless steel are scraped
Knife, the silicon single crystal flake are provided with mesa etch groove, and the stainless steel cloth half tone is with boss and the saturating region of leakage, the stainless steel
Screen mesh printing plate side is provided with boss, platform of arrangement, position and the geomery for leaking saturating region completely with silicon single crystal flake one side
Face etching tank region is consistent, and boss both sides adjacent position, which is provided with, leaks saturating region, and the stainless steel spatula side is provided with 2-5CM
High blade.
The boss protrusion height is compared with the short 3-5 microns of silicon single crystal flake mesa etch groove depth.
The silicon single crystal flake is circular, a diameter of 4 inches, 5 inches, 6 inches, 8 inches, and the thickness of the silicon single crystal flake is
150-500 microns, the silicon single crystal flake one or both sides are provided with mesa etch groove, and mesa etch groove depth is micro- in 50-150
Rice.
The stainless steel cloth half tone material is made up of stainless steel and nylon wire, and the stainless steel spatula is Teflon material
Or stainless steel scraper.
The stainless steel cloth half tone leaks saturating region, and by being spaced 1-10 microns, individually discontinuous through hole is formed.
A kind of silk screen holiday glass passivation process method, it is characterised in that：Comprise the following steps：
Step 1：To version：First by screen mesh printing plate with boss with silicon single crystal flake be provided with mesa etch groove while press Fig. 5
Mode carry out to version, overlapping；
Step 2：Upper glass paste, blade coating：Appropriate glass paste is being coated on screen mesh printing plate in the way of Fig. 6, scraper is being close to
Screen mesh printing plate front carries out blade coating 1-2 times by Fig. 6 dotted arrows direction, and glass paste proportioning is（Weight ratio）： INK：GPP glass
Powder=1：（1.5-5）, INK proportionings：Ethyl cellulose：Butyl card finish alcohol=（1.2-4）g：100ml；
Step:3：The shaping of glass paste, off-grid version：The heating preliminary drying shaping of silicon single crystal flake heat version, screen mesh printing plate is vertically departed from silicon list
Chip, hot version T=250 ± 50 DEG C, t=5-40S, glass paste shaping, see that Fig. 8 illustrates；
Step:4：Glass scorification：Silicon single crystal flake is entered into stove sintering, enters stove T=650 ± 15 DEG C, the min constant temperature T of t=10 ± 8 that heats up=
715 ± 15 DEG C, t=15 ± 10min, cool the min of t=100 ± 20, T=450 ± 15 DEG C of coming out of the stove；
Advantages of the present invention：Meet effective protection of the PN junction in silicon single crystal flake mesa etch groove, in also at utmost making in groove
Between the most thinning of the invalid glass in position, significantly reduce glass strain in mesa etch groove, farthest reduce silicon single crystal flake
Because silicon single crystal flake angularity caused by glass strain in mesa etch groove and electrical parameter change, the voltage for greatly improving device is hit
Characteristic is worn, simultaneously as scraper is not directly contacted with silicon chip, damage of the scraper to silicon chip surface band is greatly reduced, improves device
Reliability, taken into account the respective advantage of knife scraping method glassivation method technique and electrophoresis glass passivation process, both met platform
The good protection of PN junction in the etching tank of face, and eliminate low temperature in knife scraping method glass passivation process and dry the complete of powder and surface crocus
Process, avoid glass dust caused by crocus process and dispose, greatly reduce production cost, meanwhile, avoid electrophoresis glass
Glass passivation technology silicon single crystal flake surface influences follow-up photoetching process without prominent glass dust and made.
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description.
Fig. 1 is the structural representation of silicon single crystal flake of the present invention；
Fig. 2 is the structure chart of stainless steel cloth half tone of the present invention；
Fig. 3 is the structure chart of the stainless steel spatula of the present invention；
Fig. 4 is Fig. 1 of the present invention A-A sectional views；
Fig. 5 is Fig. 2 of the present invention B-B sectional views；
Fig. 6 is the side view of the stainless steel spatula of the present invention；
Fig. 7 is schematic diagram of the stainless steel cloth half tone of the present invention with silicon single crystal flake to version；
Fig. 8 is the schematic diagram of the stainless steel spatula blade coating of the present invention；
Fig. 9 is the schematic diagram of glass of the present invention paste shaping.
Wherein：1st, mesa etch groove；2nd, boss；3rd, saturating region is leaked；4th, high blade；5th, silicon single crystal flake；6th, stainless steel cloth
Half tone；7th, stainless steel spatula.
Embodiment
As shown in figs 1-9, a kind of silk screen holiday glassivation mould, including：Silicon single crystal flake 5, stainless steel cloth half tone 6,
Stainless steel spatula 7, silicon single crystal flake 5 are provided with mesa etch groove 1, and stainless steel cloth half tone 6 is stainless with boss 2 and the saturating region 3 of leakage
The side of steel wire half tone 6 is provided with boss 2, leak arrangement, position and the geomery in region 3 completely with the one side of silicon single crystal flake 5
The region of mesa etch groove 1 is consistent, and the both sides adjacent position of boss 2, which is provided with, leaks saturating region 3, and it is high that the stainless side of steel spatula 7 is provided with 2-5CM
Blade 4.
The protrusion height of boss 2 is compared with the short 3-5 microns of the depth of 5 mesa etch groove of silicon single crystal flake 1.
Silicon single crystal flake 5 is circle, and a diameter of 4 inches, 5 inches, 6 inches, 8 inches, the thickness of silicon single crystal flake 5 is 150-
500 microns, the one or both sides of silicon single crystal flake 5 are provided with mesa etch groove 1, and the depth of mesa etch groove 1 is in 50-150 microns.
The material of stainless steel cloth half tone 6 is made up of stainless steel and nylon wire, and stainless steel spatula 7 is Teflon material or stainless
Steel material scraper.
Stainless steel cloth half tone 6 leaks region 3, and by being spaced 1-10 microns, individually discontinuous through hole is formed.
A kind of silk screen holiday glass passivation process method, it is characterised in that：Comprise the following steps：
Step 1：To version：One side of the stainless steel cloth half tone 6 with boss 2 is first provided with mesa etch groove 1 with silicon single crystal flake 5
Simultaneously carried out in the way of Fig. 7 to version, overlapping；
Step 2：Upper glass paste, blade coating：Appropriate glass paste is coated on stainless steel cloth half tone 6, stainless steel spatula 7 is close to
The front of stainless steel cloth half tone 6 carries out blade coating 1-2 times by Fig. 8 dotted arrows direction, and glass paste proportioning is（Weight ratio）： INK：
GPP glass dust=1：（1.5-5）, INK proportionings：Ethyl cellulose：Butyl card finish alcohol=（1.2-4）g：100ml；
Step:3：The shaping of glass paste, off-grid version：The heating preliminary drying shaping of 5 hot version of silicon single crystal flake, stainless steel cloth half tone 6 is vertical
Depart from silicon single crystal flake 5, hot version T=250 ± 50 DEG C, t=5-40S, glass paste shaping, see that Fig. 9 illustrates；
Step:4：Glass scorification：Silicon single crystal flake 5 is entered into stove sintering, enters stove T=650 ± 15 DEG C, the min constant temperature T of t=10 ± 8 that heats up=
715 ± 15 DEG C, t=15 ± 10min, cool the min of t=100 ± 20, T=450 ± 15 DEG C of coming out of the stove；
Version is produced in addition, this process can also carry out the back side：
Step:5：The back side is to version：One side of the stainless steel cloth half tone 6 with boss 2 is first provided with mesa etch with silicon single crystal flake 5
The back side of groove 1 is carried out in the way of Fig. 7 to version, overlapping.
Step:6：Upper glass paste, blade coating：Appropriate glass paste is coated on stainless steel cloth half tone 6, by stainless steel spatula
7 are close to the front of stainless steel cloth half tone 6 carries out blade coating 1-2 times by Fig. 8 dotted arrows direction, and glass paste proportioning is（Weight ratio）：
INK：GPP glass dust=1：（1.5-5）, INK proportionings：Ethyl cellulose：Butyl card finish alcohol=（1.2-4）g：100ml；
Step:7：The shaping of back glass paste, off-grid version：5 hot version of silicon single crystal flake heating preliminary drying shaping, by stainless steel cloth half tone 6
It is vertical to depart from silicon single crystal flake 5, hot version T=250 ± 50 DEG C, t=5-40S, see that Fig. 9 illustrates after glass paste shaping；
Step:8：Secondary glass scorification：Silicon single crystal flake 5 is entered into stove sintering, enters stove T=650 ± 15 DEG C, the heating min of t=10 ± 8 is permanent
Warm T=715 ± 15 DEG C, t=15 ± 10min, cool the min of t=100 ± 20, T=450 ± 15 DEG C of coming out of the stove.
The present invention meets effective protection of the PN junction in silicon single crystal flake mesa etch groove, also at utmost makes pars intermedia in groove
The invalid glass most thinning in position, significantly reduces glass strain in mesa etch groove, farthest reduce silicon single crystal flake due to
Silicon single crystal flake angularity caused by glass strain and electrical parameter change, the voltage breakdown for greatly improving device are special in mesa etch groove
Property, simultaneously as scraper is not directly contacted with silicon chip, is greatly reduced damage of the scraper to silicon chip surface band, and that improves device can
By property, the respective advantage of knife scraping method glassivation method technique and electrophoresis glass passivation process has been taken into account, had both met table top corruption
The good protection of PN junction in groove is lost, and eliminates the full mistake that low temperature in knife scraping method glass passivation process dries powder and surface crocus
Journey, avoid glass dust caused by crocus process and dispose, greatly reduce production cost, meanwhile, avoid electrophoresis glass
Passivation technology silicon single crystal flake surface influences follow-up photoetching process without prominent glass dust and made.
Claims (6)
- A kind of 1. silk screen holiday glassivation mould, it is characterised in that：Including：Silicon single crystal flake, stainless steel cloth half tone, stainless steel Scraper, the silicon single crystal flake are provided with mesa etch groove, and the stainless steel cloth half tone is described stainless with boss and the saturating region of leakage Steel wire half tone side is provided with boss, arrangement, position and the geomery in the saturating region of leakage completely with silicon single crystal flake one side Mesa etch groove region is consistent, and boss both sides adjacent position, which is provided with, leaks saturating region, and the stainless steel spatula side is provided with 2- The high blades of 5CM.
- A kind of 2. silk screen holiday glassivation mould according to claim 1, it is characterised in that：The boss protrusion height Compared with the short 3-5 microns of silicon single crystal flake mesa etch groove depth.
- A kind of 3. silk screen holiday glassivation mould according to claim 1, it is characterised in that：The silicon single crystal flake is circle Shape, a diameter of 4 inches, 5 inches, 6 inches, 8 inches, the thickness of the silicon single crystal flake is 150-500 microns, the silicon single crystal flake One or both sides are provided with mesa etch groove, and mesa etch groove depth is in 50-150 microns.
- A kind of 4. silk screen holiday glassivation mould according to claim 1, it is characterised in that：The stainless steel cloth net Plate matter is made up of stainless steel and nylon wire, and the stainless steel spatula is Teflon material or stainless steel scraper.
- A kind of 5. silk screen holiday glassivation mould according to claim 1, it is characterised in that：The stainless steel cloth net Version leaks saturating region, and by being spaced 1-10 microns, individually discontinuous through hole is formed.
- A kind of 6. silk screen holiday glass passivation process method according to claim 1, it is characterised in that：Including following step Suddenly：Step 1：To version：First by screen mesh printing plate with boss with silicon single crystal flake be provided with mesa etch groove while carry out pair Version, it is overlapping；Step 2：Upper glass paste, blade coating：Appropriate glass paste is coated on screen mesh printing plate, scraper is close to screen mesh printing plate front and entered Row blade coating 1-2 times, glass paste proportioning are（Weight ratio）： INK：GPP glass dust=1：（1.5-5）, INK proportionings：Ethyl cellulose： Butyl card finish alcohol=（1.2-4）g：100ml；Step:3：The shaping of glass paste, off-grid version：The heating preliminary drying shaping of silicon single crystal flake heat version, screen mesh printing plate is vertically departed from silicon list Chip, hot version T=250 ± 50 DEG C, t=5-40S, glass paste shaping；Step:4：Glass scorification：Silicon single crystal flake is entered into stove sintering, enters stove T=650 ± 15 DEG C, the min constant temperature T of t=10 ± 8 that heats up= 715 ± 15 DEG C, t=15 ± 10min, cool the min of t=100 ± 20, T=450 ± 15 DEG C of coming out of the stove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710815321.0A CN107611044B (en) | 2017-09-12 | 2017-09-12 | Wire mesh screen through-coating glass passivation mold and process method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710815321.0A CN107611044B (en) | 2017-09-12 | 2017-09-12 | Wire mesh screen through-coating glass passivation mold and process method thereof |
Publications (2)
| Publication Number | Publication Date |
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| CN107611044A true CN107611044A (en) | 2018-01-19 |
| CN107611044B CN107611044B (en) | 2020-02-14 |
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| CN201710815321.0A Active CN107611044B (en) | 2017-09-12 | 2017-09-12 | Wire mesh screen through-coating glass passivation mold and process method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109087857A (en) * | 2018-08-22 | 2018-12-25 | 扬州杰利半导体有限公司 | A kind of manufacture craft of GPP chip |
| CN111319369A (en) * | 2018-12-14 | 2020-06-23 | 天津环鑫科技发展有限公司 | Twice screen printing method for semiconductor device |
| CN111319345A (en) * | 2018-12-14 | 2020-06-23 | 天津环鑫科技发展有限公司 | TVS chip glass passivation screen printing plate and process method thereof |
| CN113471066A (en) * | 2021-07-10 | 2021-10-01 | 江苏晟驰微电子有限公司 | Wafer glass passivation process method based on orifice plate steel mesh printing |
| CN113471111A (en) * | 2021-07-10 | 2021-10-01 | 江苏晟驰微电子有限公司 | Tool for realizing wafer glass passivation process by using orifice plate steel screen printing |
| CN114420560A (en) * | 2022-01-13 | 2022-04-29 | 杭州赛晶电子有限公司 | GPP diode chip production process adopting honeycomb photoetching plate and knife scraping method |
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| CN102244078A (en) * | 2011-07-28 | 2011-11-16 | 启东市捷捷微电子有限公司 | Controlled silicon chip structure of mesa technology and implementation method |
| CN204184015U (en) * | 2014-10-29 | 2015-03-04 | 蓝思科技股份有限公司 | A kind of small size 3D glass silk screen printing half tone assembly |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109087857A (en) * | 2018-08-22 | 2018-12-25 | 扬州杰利半导体有限公司 | A kind of manufacture craft of GPP chip |
| CN111319369A (en) * | 2018-12-14 | 2020-06-23 | 天津环鑫科技发展有限公司 | Twice screen printing method for semiconductor device |
| CN111319345A (en) * | 2018-12-14 | 2020-06-23 | 天津环鑫科技发展有限公司 | TVS chip glass passivation screen printing plate and process method thereof |
| CN111319345B (en) * | 2018-12-14 | 2021-05-14 | 天津环鑫科技发展有限公司 | TVS chip glass passivation screen printing plate and process method thereof |
| CN113471066A (en) * | 2021-07-10 | 2021-10-01 | 江苏晟驰微电子有限公司 | Wafer glass passivation process method based on orifice plate steel mesh printing |
| CN113471111A (en) * | 2021-07-10 | 2021-10-01 | 江苏晟驰微电子有限公司 | Tool for realizing wafer glass passivation process by using orifice plate steel screen printing |
| CN114420560A (en) * | 2022-01-13 | 2022-04-29 | 杭州赛晶电子有限公司 | GPP diode chip production process adopting honeycomb photoetching plate and knife scraping method |
| CN114420560B (en) * | 2022-01-13 | 2023-12-08 | 杭州赛晶电子有限公司 | GPP diode chip production process adopting honeycomb photoetching plate and knife scraping method |
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Address after: 226200 Jinggangshan Road, Jinggangshan Road, Sutong science and Technology Industrial Park, Nantong City, Jiangsu Province, No. 6 Applicant after: Agile Semiconductor Ltd Address before: 226200 Jiangsu city of Nantong province science and Technology Industrial Park of Su Tong Jiang Cheng Road No. 1088 Jiang Park Building 3, room 2159, R & D Applicant before: Agile Semiconductor Ltd |
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