CN113471066A - Wafer glass passivation process method based on orifice plate steel mesh printing - Google Patents
Wafer glass passivation process method based on orifice plate steel mesh printing Download PDFInfo
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- CN113471066A CN113471066A CN202110781285.7A CN202110781285A CN113471066A CN 113471066 A CN113471066 A CN 113471066A CN 202110781285 A CN202110781285 A CN 202110781285A CN 113471066 A CN113471066 A CN 113471066A
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- orifice plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
The invention discloses a wafer glass passivation process method based on orifice plate steel mesh printing, wherein the orifice plate steel mesh comprises a plurality of groove printing areas, and the groove printing areas are mutually arranged to form a plurality of squares as chip protection areas; the sizes of the groove printing areas are consistent, and the distances and the angles are the same; the pore plate comprises two circular positioning holes and a positioning edge, the circular positioning holes are in Y-axis symmetry in the middle of the pore plate, and the positioning frame is arranged around the pore plate. The method has the advantages of simple operation, less wafer pollution, low equipment cost, simple and convenient operation and high environmental friendliness.
Description
Technical Field
The invention relates to the technical field of wafer processing, in particular to a wafer glass passivation process method based on orifice plate steel mesh printing.
Background
The current power device chip generally adopts glass passivation to protect the PN junction joint, reduces particle contamination to reduce chip leakage current, and improves the high temperature resistance of the chip.
The glass passivation technology on the market generally adopts a knife scraping method, an electrophoresis method and a photoresistance method. The knife scraping method has low equipment threshold, is simple and convenient to operate, but can cause linear and flaky residues of glass powder in a non-passivation area on the surface of the wafer, so that the surface of a chip is polluted; the passivation layer of the electrophoresis method is compact, the electrical performance is good, but the equipment cost is high, and the glass powder is contaminated in the non-passivation area of the surface of the wafer, so that the electrical property is reduced due to the contamination of the glass powder on the surface of the chip; the photoresist method requires the use of a photoresist and a photoresist developing machine, has high raw material and equipment costs and harmful gas and liquid generation, and is not environmentally friendly, and thus, improvement is required.
Disclosure of Invention
The invention aims to provide a wafer glass passivation process method based on orifice plate steel mesh printing, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme: a kind of orifice plate steel mesh, the orifice plate steel mesh includes several slot printing areas, the slot printing area is arranged each other and formed several squares as the chip protection area; the sizes of the groove printing areas are consistent, and the distances and the angles are the same; the pore plate comprises two circular positioning holes and a positioning edge, the circular positioning holes are in Y-axis symmetry in the middle of the pore plate, and the positioning frame is arranged around the pore plate.
Preferably, the wafer glass passivation process method based on the orifice plate steel mesh printing comprises the following steps:
A. before printing, firstly fixing and aligning the wafer to positioning points;
B. in the printing operation process, the printing direction of the scraper is inclined by 45 degrees;
C. then printing a layer of glass slurry on the wafer groove;
D. pre-baking the wafer: arranging the printed wafers on a vertical clamping plug, putting the vertical clamping plug into an oven, baking for 5 minutes at the temperature of 125-175 ℃, and removing the organic solvent in the glass slurry;
E. pre-sintering: arranging the sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, and removing the adhesive in the glass slurry;
F. sintering and annealing: arranging the pre-sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, sintering and melting glass powder, and then cooling to 530 ℃ for annealing for 15 minutes to release stress.
Preferably, the glass slurry in the step C comprises: ethyl cellulose, butyl carbitol, IPC760CREG glass powder, ACE, epoxy resin in a weight ratio of 1: 10: 17: 4: 1, and stirring.
Preferably, in the step E, the sintering is carried out at the temperature of 325-375 ℃ for 20-30 minutes.
Preferably, the sintering in the step F is carried out at a temperature of 690-710 ℃ for 10-14 minutes under a pure nitrogen atmosphere.
Compared with the prior art, the invention has the beneficial effects that: the method has the advantages of simple operation, less wafer pollution, low equipment cost, simple and convenient operation and high environmental friendliness; in addition, the training of the staff is easier, and the MO times are obviously reduced; the productivity is obviously improved, and the single yield is increased by 85 percent. Compared with an electrophoresis method, the method has the advantages that the material cost, the equipment depreciation and the operation period are obviously shortened, the comprehensive cost is reduced by 60 percent, and the appearance yield is improved by 4 percent. Compared with a manual scraping method, the performance of the electrophoresis process is improved by 25 ℃ of high-temperature reliability tolerance temperature, the aging time is increased by 500 hours, the reliability index of the electrophoresis method series products is reached, and the electrophoresis process is low in cost, easy to operate, high in yield and high in performance.
Drawings
FIG. 1 is a schematic view of a wafer stencil according to the present invention;
FIG. 2 is a steel mesh connection diagram of the non-perforated steel mesh region according to the present invention;
FIG. 3 is a flow chart of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1-2, the present invention provides a technical solution: an orifice plate steel mesh, its characterized in that: the pore plate steel mesh comprises a plurality of groove printing areas, and the groove printing areas are mutually arranged to form a plurality of squares as chip protection areas; the sizes of the groove printing areas are consistent, and the distances and the angles are the same; the pore plate comprises two circular positioning holes and a positioning edge, the circular positioning holes are in Y-axis symmetry in the middle of the pore plate, and the positioning frame is arranged around the pore plate. In fig. 1, the color coating area is an opening area, and includes a strip-shaped groove printing area and a circular alignment area; in FIG. 2, 1 is a circle pair point, and 1 is a yellow mark point on the wafer; 2 is an open trench region; and 3 is a steel mesh joint.
As shown in fig. 3
The first embodiment is as follows:
a wafer glass passivation process method based on orifice plate steel mesh printing comprises the following steps:
A. before printing, firstly fixing and aligning the wafer to positioning points;
B. in the printing operation process, the printing direction of the scraper is inclined by 45 degrees;
C. then printing a layer of glass slurry on the wafer groove;
D. pre-baking the wafer: arranging the printed wafers on a vertical clamping plug, putting the vertical clamping plug into an oven, baking for 5 minutes at the temperature of 125 ℃, and removing the organic solvent in the glass slurry;
E. pre-sintering: arranging the sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, and removing the adhesive in the glass slurry;
F. sintering and annealing: arranging the pre-sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, sintering and melting glass powder, and then cooling to 530 ℃ for annealing for 15 minutes to release stress.
In this embodiment, the glass paste in step C includes: ethyl cellulose, butyl carbitol, IPC760CREG glass powder, ACE, epoxy resin in a weight ratio of 1: 10: 17: 4: 1, and stirring.
In this example, step E was carried out at 325 ℃ for 20 minutes.
In this example, step F was sintered at 690 ℃ for 10 minutes in a pure nitrogen atmosphere.
Example two:
a wafer glass passivation process method based on orifice plate steel mesh printing comprises the following steps:
A. before printing, firstly fixing and aligning the wafer to positioning points;
B. in the printing operation process, the printing direction of the scraper is inclined by 45 degrees;
C. then printing a layer of glass slurry on the wafer groove;
D. pre-baking the wafer: arranging the printed wafers on a vertical clamping plug, putting the vertical clamping plug into an oven, and baking the vertical clamping plug for 5 minutes at the temperature of 175 ℃ to remove the organic solvent in the glass slurry;
E. pre-sintering: arranging the sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, and removing the adhesive in the glass slurry;
F. sintering and annealing: arranging the pre-sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, sintering and melting glass powder, and then cooling to 530 ℃ for annealing for 15 minutes to release stress.
In this embodiment, the glass paste in step C includes: ethyl cellulose, butyl carbitol, IPC760CREG glass powder, ACE, epoxy resin in a weight ratio of 1: 10: 17: 4: 1, and stirring.
In this example, step E was carried out at a temperature of 375 ℃ for 30 minutes.
In this example, step F was sintered at a temperature of 710 ℃ for 14 minutes in a pure nitrogen atmosphere.
Example three:
a wafer glass passivation process method based on orifice plate steel mesh printing comprises the following steps:
A. before printing, firstly fixing and aligning the wafer to positioning points;
B. in the printing operation process, the printing direction of the scraper is inclined by 45 degrees;
C. then printing a layer of glass slurry on the wafer groove;
D. pre-baking the wafer: arranging the printed wafers on a vertical clamping plug, putting the vertical clamping plug into an oven, baking the vertical clamping plug for 5 minutes at the temperature of 150 ℃, and removing the organic solvent in the glass slurry;
E. pre-sintering: arranging the sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, and removing the adhesive in the glass slurry;
F. sintering and annealing: arranging the pre-sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, sintering and melting glass powder, and then cooling to 530 ℃ for annealing for 15 minutes to release stress.
In this embodiment, the glass paste in step C includes: ethyl cellulose, butyl carbitol, IPC760CREG glass powder, ACE, epoxy resin in a weight ratio of 1: 10: 17: 4: 1, and stirring.
In this example, step E was carried out at a temperature of 350 ℃ for 25 minutes.
In this example, step F was sintered at a temperature of 700 ℃ for 12 minutes in a pure nitrogen atmosphere.
The method has the advantages of simple operation, less wafer pollution, low equipment cost, simple and convenient operation and high environmental friendliness; in addition, the training of the staff is easier, and the MO times are obviously reduced; the productivity is obviously improved, and the single yield is increased by 85 percent. Compared with an electrophoresis method, the method has the advantages that the material cost, the equipment depreciation and the operation period are obviously shortened, the comprehensive cost is reduced by 60 percent, and the appearance yield is improved by 4 percent. Compared with a manual scraping method, the performance of the electrophoresis process is improved by 25 ℃ of high-temperature reliability tolerance temperature, the aging time is increased by 500 hours, the reliability index of the electrophoresis method series products is reached, and the electrophoresis process is low in cost, easy to operate, high in yield and high in performance.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (5)
1. An orifice plate steel mesh, its characterized in that: the pore plate steel mesh comprises a plurality of groove printing areas, and the groove printing areas are mutually arranged to form a plurality of squares as chip protection areas; the sizes of the groove printing areas are consistent, and the distances and the angles are the same; the pore plate comprises two circular positioning holes and a positioning edge, the circular positioning holes are in Y-axis symmetry in the middle of the pore plate, and the positioning frame is arranged around the pore plate.
2. A wafer glass passivation process method based on orifice plate steel mesh printing is characterized in that: the method comprises the following steps:
A. before printing, firstly fixing and aligning the wafer to positioning points;
B. in the printing operation process, the printing direction of the scraper is inclined by 45 degrees;
C. then printing a layer of glass slurry on the wafer groove;
D. pre-baking the wafer: arranging the printed wafers on a vertical clamping plug, putting the vertical clamping plug into an oven, baking for 5 minutes at the temperature of 125-175 ℃, and removing the organic solvent in the glass slurry;
E. pre-sintering: arranging the sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, and removing the adhesive in the glass slurry;
F. sintering and annealing: arranging the pre-sintered wafers on a horizontal quartz boat, pushing the quartz boat and the wafers into a horizontal furnace tube together, sintering and melting glass powder, and then cooling to 530 ℃ for annealing for 15 minutes to release stress.
3. The wafer glass passivation process method based on the orifice plate steel mesh printing as claimed in claim 1, wherein: the glass slurry in the step C comprises: ethyl cellulose, butyl carbitol, IPC760C REG glass powder, ACE, epoxy resin in a ratio of 1: 10: 17: 4: 1, and stirring.
4. The wafer glass passivation process method based on the orifice plate steel mesh printing as claimed in claim 1, wherein: and in the step E, sintering is carried out at the temperature of 325-375 ℃ for 20-30 minutes.
5. The wafer glass passivation process method based on the orifice plate steel mesh printing as claimed in claim 1, wherein: and sintering the mixture in the step F at the temperature of 690-710 ℃ for 10-14 minutes in the pure nitrogen atmosphere.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110781285.7A CN113471066A (en) | 2021-07-10 | 2021-07-10 | Wafer glass passivation process method based on orifice plate steel mesh printing |
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| CN202110781285.7A CN113471066A (en) | 2021-07-10 | 2021-07-10 | Wafer glass passivation process method based on orifice plate steel mesh printing |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07235533A (en) * | 1994-02-22 | 1995-09-05 | Hitachi Ltd | Glass passivation semiconductor device and its manufacture |
| US20170050426A1 (en) * | 2015-08-20 | 2017-02-23 | Sensata Technologies, Inc. | Squeegee printing on desceded surfaces |
| CN107611044A (en) * | 2017-09-12 | 2018-01-19 | 捷捷半导体有限公司 | A kind of silk screen holiday glassivation mould and its process |
| CN109309017A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of printed glass slurry technique |
| US20190055155A1 (en) * | 2016-08-03 | 2019-02-21 | Ferro Corporation | Passivation Glasses For Semiconductor Devices |
| CN111319345A (en) * | 2018-12-14 | 2020-06-23 | 天津环鑫科技发展有限公司 | TVS chip glass passivation screen printing plate and process method thereof |
-
2021
- 2021-07-10 CN CN202110781285.7A patent/CN113471066A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07235533A (en) * | 1994-02-22 | 1995-09-05 | Hitachi Ltd | Glass passivation semiconductor device and its manufacture |
| US20170050426A1 (en) * | 2015-08-20 | 2017-02-23 | Sensata Technologies, Inc. | Squeegee printing on desceded surfaces |
| US20190055155A1 (en) * | 2016-08-03 | 2019-02-21 | Ferro Corporation | Passivation Glasses For Semiconductor Devices |
| CN109309017A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of printed glass slurry technique |
| CN107611044A (en) * | 2017-09-12 | 2018-01-19 | 捷捷半导体有限公司 | A kind of silk screen holiday glassivation mould and its process |
| CN111319345A (en) * | 2018-12-14 | 2020-06-23 | 天津环鑫科技发展有限公司 | TVS chip glass passivation screen printing plate and process method thereof |
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