CN107603329A - A kind of liquid development photosensitive solder resist ink and preparation method thereof - Google Patents

A kind of liquid development photosensitive solder resist ink and preparation method thereof Download PDF

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Publication number
CN107603329A
CN107603329A CN201710840841.7A CN201710840841A CN107603329A CN 107603329 A CN107603329 A CN 107603329A CN 201710840841 A CN201710840841 A CN 201710840841A CN 107603329 A CN107603329 A CN 107603329A
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CN
China
Prior art keywords
solder resist
resist ink
block
liquid development
photosensitive solder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710840841.7A
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Chinese (zh)
Inventor
沈志刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LEKAITE TECHNOLOGY (TONGLING) Co Ltd
Original Assignee
LEKAITE TECHNOLOGY (TONGLING) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LEKAITE TECHNOLOGY (TONGLING) Co Ltd filed Critical LEKAITE TECHNOLOGY (TONGLING) Co Ltd
Priority to CN201710840841.7A priority Critical patent/CN107603329A/en
Publication of CN107603329A publication Critical patent/CN107603329A/en
Pending legal-status Critical Current

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Abstract

Develop photosensitive solder resist ink the invention discloses a kind of liquid, include the components of following parts by weight:Photosensitive resin 45 65, activated monomer 10 20, light trigger 28, colorant 15, filler 12 18, defoamer 12, solvent 10 15, described photosensitive resin includes amphipathic nature block polymer, bisphenol A type epoxy resin, organic silicon acrylic ester, and the mass ratio of three is 1:(0.8‑1.5):(0.1‑0.5).

Description

A kind of liquid development photosensitive solder resist ink and preparation method thereof
Technical field
The present invention relates to solder mask technical field, more particularly to a kind of liquid development photosensitive solder resist ink and its preparation side Method.
Background technology
Welding resistance is the particularly important procedure of PCB manufacturing process, and its main function is that solder mask is passed through into silk The mode of print is covered on the line pattern etched, the position that need not enter units welding is all covered, to prevent In element welding process because of upper tin and caused by electrical communication the problem of forming short circuit.With the further densifications of PCB and nothing The appearance of lead welding procedure, a large amount of of higher requirement, especially flexible PCB are it is also proposed for the performance of solder mask Use.Solder mask plays moistureproof, anti-pollution, anticorrosion in the solder mask that circuit board surface is formed and prevents welding from causing splicing Deng effect, this requires solder mask to have excellent heat resistance, chemical resistance, pliability.Traditional epoxies soldering-resistance layer solidification Higher fragility is shown afterwards, it is impossible to suitable for flexible board.
The content of the invention
The defects of present invention is in order to make up prior art, there is provided a kind of liquid development photosensitive solder resist ink and its preparation side Method.
The present invention is achieved by the following technical solutions:
A kind of liquid development photosensitive solder resist ink, include the component of following parts by weight:Photosensitive resin 45-65, activated monomer 10- 20th, light trigger 2-8, colorant 1-5, filler 12-18, defoamer 1-2, solvent 10-15, described photosensitive resin include amphipathic Block copolymer, bisphenol A type epoxy resin, organic silicon acrylic ester, the mass ratio of three is 1:(0.8-1.5):(0.1- 0.5).
Described activated monomer is acrylic monomers.
Described light trigger is TMDPO, 2- hydroxy-2-methyl -1- phenyl It is acetone, double(2,4,6- trimethylbenzoyls)Phenyl phosphine oxide, 1- hydroxy cyclohexyl phenylketones and 2,4,6- trimethylbenzene first One kind in acyl group ethoxyl phenenyl phosphine oxide.
Described colorant is according to 1 by pigment and fluorocarbon surfactant:(0.01-0.1)Weight than it is blended, grind Grind, be scattered obtained.
Described filler is mesoporous silicon oxide.
Described amphipathic nature block polymer is poly-(Isoprene-block-oxirane)Block copolymer, gather(Ethene Propylene-block-oxirane)Block copolymer, gather(Butadiene-block-oxirane)Block copolymer, gather(Isoprene- Block-oxirane)One kind in block copolymer.
A kind of preparation method of described liquid development photosensitive solder resist ink, is comprised the following steps that:By photosensitive resin, activity Monomer and light trigger feed intake in passage, are stirred with high speed dispersor under 500-600r/min rotating speeds to after 65-80 DEG C, Stop stirring, add filler, colorant, solvent, defoamer, open stirring, mixing speed 300-500r/min, be stirred Resulting material is ground to fineness less than 5 μm with 260 or 405 type three-roll grinders after even, finally uses the screen pack of 325-600 mesh again Filtering, produce described liquid development photosensitive solder resist ink.
Solder mask prepared by the present invention is with amphipathic nature block polymer modified bisphenol A type epoxy resin and organosilicon third Then olefin(e) acid ester compound reacts, the resinite of synthesis has good photonasty and heat concurrently with activated monomer again as photosensitive resin Curability, amphipathic group therein make itself and mesoporous silicon oxide filler, the pigment through fluorocarbon surfactant modified processing There is more preferable compatibility and adhesion Deng composition, solve that traditional solder mask fragility is big, has the problems such as aberration, it is final to be made Ink uniform color it is stable, pliability is good, heat-resisting, antiseptic power is strong, hydrophobic oleophobic, is especially suitable for high performance flexible circuit Plate.
Embodiment
A kind of liquid development photosensitive solder resist ink, include the component of following parts by weight:Photosensitive resin 45, acrylic monomers 10th, TMDPO 2, colorant 1, mesoporous silicon oxide 12, defoamer 1, solvent 10, it is described Photosensitive resin include it is poly-(Isoprene block oxirane)Block copolymer, bisphenol A type epoxy resin, acid-organosilicon crylic acid Ester, the mass ratio of three is 1:0.8:0.1.
A kind of described liquid development photosensitive solder resist ink, described light trigger is 2,4,6 trimethylbenzoyls two It is phenyl phosphine oxide, 2 hyd roxymethyl phenyl acetone, double(2,4,6 trimethylbenzoyls)Phenyl phosphine oxide, 1 hydroxy-cyclohexyl benzene Ketone and 2, one kind in 4,6 trimethylbenzoyl ethoxyl phenenyl phosphine oxides.
Described colorant is according to 1 by pigment and fluorocarbon surfactant:(0.01)Weight than it is blended, grinding, point Dissipate obtained.
A kind of preparation method of described liquid development photosensitive solder resist ink, is comprised the following steps that:By photosensitive resin, activity Monomer and light trigger feed intake in passage, are stirred with high speed dispersor under 500r/min rotating speeds to after 65 DEG C, stop stirring Mix, add filler, colorant, solvent, defoamer, open stirring, mixing speed 300r/min, be uniformly mixed rear gains Material is ground to fineness less than 5 μm with 260 type three-roll grinders, finally produces described liquid with the filter screen filtration of 325 mesh again Develop photosensitive solder resist ink.

Claims (7)

  1. The photosensitive solder resist ink 1. a kind of liquid is developed, it is characterised in that include the component of following parts by weight:Photosensitive resin 45-65, Activated monomer 10-20, light trigger 2-8, colorant 1-5, filler 12-18, defoamer 1-2, solvent 10-15, described photosensitive tree Fat includes amphipathic nature block polymer, bisphenol A type epoxy resin, organic silicon acrylic ester, and the mass ratio of three is 1:(0.8- 1.5):(0.1-0.5).
  2. 2. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described activated monomer is third Acrylic monomer.
  3. A kind of 3. liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described light trigger is 2, It is 4,6- trimethyl benzoyl diphenyl base phosphine oxides, 2- hydroxy-2-methyl -1- phenylacetones, double(2,4,6- trimethylbenzoyls Base)Phenyl phosphine oxide, 1- hydroxy cyclohexyl phenylketones and 2, one in 4,6- trimethylbenzoyl ethoxyl phenenyl phosphine oxides Kind.
  4. 4. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described colorant is by pigment With fluorocarbon surfactant according to 1:(0.01-0.1)Weight than blended, grinding, scattered obtained.
  5. 5. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described filler is mesoporous two Silica.
  6. 6. a kind of liquid development photosensitive solder resist ink as claimed in claim 1, it is characterised in that described amphipathic block is total to Polymers is poly-(Isoprene-block-oxirane)Block copolymer, gather(Ethylene, propylene-block-oxirane)Block copolymerization Thing, gather(Butadiene-block-oxirane)Block copolymer, gather(Isoprene-block-oxirane)In block copolymer One kind.
  7. A kind of 7. preparation method of liquid development photosensitive solder resist ink as described in claim 1-6, it is characterised in that specific step It is rapid as follows:Photosensitive resin, activated monomer and light trigger are fed intake in passage, with high speed dispersor in 500-600r/min Stirred under rotating speed to after 65-80 DEG C, stop stirring, add filler, colorant, solvent, defoamer, opened and stir, mixing speed is 300-500r/min, it is uniformly mixed rear resulting material and is ground to fineness less than 5 μm with 260 or 405 type three-roll grinders, most Use the filter screen filtration of 325-600 mesh again afterwards, produce described liquid development photosensitive solder resist ink.
CN201710840841.7A 2017-09-18 2017-09-18 A kind of liquid development photosensitive solder resist ink and preparation method thereof Pending CN107603329A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710840841.7A CN107603329A (en) 2017-09-18 2017-09-18 A kind of liquid development photosensitive solder resist ink and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710840841.7A CN107603329A (en) 2017-09-18 2017-09-18 A kind of liquid development photosensitive solder resist ink and preparation method thereof

Publications (1)

Publication Number Publication Date
CN107603329A true CN107603329A (en) 2018-01-19

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CN201710840841.7A Pending CN107603329A (en) 2017-09-18 2017-09-18 A kind of liquid development photosensitive solder resist ink and preparation method thereof

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113549369A (en) * 2021-07-05 2021-10-26 江苏海田电子材料有限公司 Crack-resistant solder-resist hole plugging ink and preparation method thereof
CN116694128A (en) * 2023-06-28 2023-09-05 鹤山市炎墨科技有限公司 Anti-welding ink containing block copolymer and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003005126A1 (en) * 2001-07-04 2003-01-16 Showa Denko K.K. Resist curable resin composition and cured article thereof
CN101027358A (en) * 2004-04-02 2007-08-29 陶氏环球技术公司 Amphiphilic block copolymer-toughened thermoset resins
CN101717599A (en) * 2009-12-27 2010-06-02 浙江桐乡新东方油墨有限公司 Liquid photosensitive solder resist ink and preparation method thereof
CN105418864A (en) * 2015-12-21 2016-03-23 海门埃夫科纳化学有限公司 Amphiphilic block copolymer, preparation method therefor and application of amphiphilic block copolymer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003005126A1 (en) * 2001-07-04 2003-01-16 Showa Denko K.K. Resist curable resin composition and cured article thereof
CN101027358A (en) * 2004-04-02 2007-08-29 陶氏环球技术公司 Amphiphilic block copolymer-toughened thermoset resins
CN101717599A (en) * 2009-12-27 2010-06-02 浙江桐乡新东方油墨有限公司 Liquid photosensitive solder resist ink and preparation method thereof
CN105418864A (en) * 2015-12-21 2016-03-23 海门埃夫科纳化学有限公司 Amphiphilic block copolymer, preparation method therefor and application of amphiphilic block copolymer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113549369A (en) * 2021-07-05 2021-10-26 江苏海田电子材料有限公司 Crack-resistant solder-resist hole plugging ink and preparation method thereof
CN116694128A (en) * 2023-06-28 2023-09-05 鹤山市炎墨科技有限公司 Anti-welding ink containing block copolymer and preparation method thereof
CN116694128B (en) * 2023-06-28 2023-11-24 鹤山市炎墨科技有限公司 Anti-welding ink containing block copolymer and preparation method thereof

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Application publication date: 20180119

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