CN107591490B - Organic electroluminescence device and its manufacturing method - Google Patents
Organic electroluminescence device and its manufacturing method Download PDFInfo
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Abstract
The present invention provides a kind of organic electroluminescence device and its manufacturing method, including substrate, the first metal layer, the first inorganic layer, semiconductor layer, the second inorganic layer, second metal layer, the third inorganic layer successively to form a film above substrate, wherein, through-hole is formed on third inorganic layer, and through-hole is formed by twice etching, through-hole is in step-like, through-hole includes the first hole, step and the second hole, and the minimum diameter in the second hole is greater than the maximum gauge in the first hole.The present invention solves the problems, such as that low temperature polycrystalline silicon can not be applied to large-size glass; simple process simultaneously; can save the cost improve production efficiency; by carrying out twice etching to third inorganic layer; so that metal layer exposed after existing processing procedure has one layer of inorganic protection; to solve the problems, such as that metal layer exposed in the prior art is oxidized, device lifetime and yield are improved.
Description
Technical field
The invention belongs to illuminating device and display device manufacturing field more particularly to a kind of organic electroluminescence device and its
Manufacturing method.
Background technique
Display technology is mainly liquid crystal display (Liquid Crystal Display, LCD) and organic on the market at present
Two kinds of electroluminescent display (Organic Light-Emitting Diode, OLED)；Wherein OLED is with its self-luminous institute band
High contrast, high colour gamut, wide viewing angle, low energy consumption, low reaction time and its more frivolous advantage come more are favored by market.
The basic structure of OLED includes anode layer, functional layer and cathode layer.Wherein functional layer includes: hole transmission layer, hair
Photosphere and electron transfer layer.OLED principle of luminosity is that anode and cathode respectively provides electronics and hole in the effect of extra electric field in simple terms
Under, it being combined in luminescent layer and forms exciton, exciton returns to ground state and issues photon, so OLED is a kind of galvanoluminescence device,
Size of current is controlled by semiconductor backplate, to control light emission luminance.When providing appropriate voltage to cathode and anode, electronics and
Hole is injected into electron and hole transport layer from cathode and anode respectively, and moves to hair by electron and hole transport layer respectively
Photosphere, hole and the electronics recombination luminescence in luminescent layer, to realize the luminous characteristic of OLED itself.
At present on the market more mature backboard mainly with monocrystalline silicon (a-Si), low temperature polycrystalline silicon (LTPS), indium gallium zinc
(IGZO) based on these three, and LTPS becomes the preferred side of OLED backboard with its higher mobility and mature manufacture craft
Case, at present on the market volume production OLED based on LTPS backboard.
General LCD panel is by thin film transistor (TFT) (Thin Film Transistor, TFT) and color filter (Color
Filter, CF) composition, and oled panel is made of TFT and OLED device.General oled panel is by buffer layer, low temperature polycrystalline silicon
Layer LTPS, gate insulating layer GI, the first metal layer M1, intermediate insulating layer ILD, second metal layer M2, planarization layer PLN, anode
RE, pixel defining layer PDL, supporting layer PS, OLED device etc. are constituted, although oled panel, there are numerous advantages, its disadvantage exists
It is also that can not ignore during volume production.Firstly, low temperature polycrystalline silicon (LTPS) passes through such as laser crystallization by monocrystalline silicon (a-Si)
(ELA) etc. modes crystallize to be formed, but since current equipment and technology limits, and ELA can not be applied to large-size glass, therefore the production of LTPS
It can be a problem with efficiency.Secondly, needing to carry out LTPS repeatedly doping in LTPS backboard processing procedure, to change its characteristic, technique is multiple
Miscellaneous, process is various, and corresponding cost is not equally low, these are also the problem of can not be ignored.
In this case, for the above-mentioned problems in the prior art, the present invention proposes a kind of new organic electroluminescence
Luminescent device and its manufacturing method.
Summary of the invention
The purpose of the present invention is to provide one kind, and metal layer can be prevented in normal process to be oxidized, improves product yield
Organic electroluminescence device.
The present invention provides a kind of organic electroluminescence device, comprising:
Substrate；
The first metal layer being formed in above the substrate；
The inorganic layer being formed in above the first metal layer, the inorganic layer include at least three layers of inorganic layer, it is described extremely
Few three layers of inorganic layer include the first inorganic layer, the second inorganic layer and third inorganic layer；
The semiconductor layer being formed between the first inorganic layer and the second inorganic layer；
The second metal layer being formed between the second inorganic layer and third inorganic layer；
Wherein, be formed with through-hole on the third inorganic layer, the through-hole in step-like, the through-hole include the first hole,
Step and the second hole, the minimum diameter in second hole are greater than the maximum gauge in first hole.
Preferably, the invention also includes hole, by inorganic layer in step-like, the inorganic layer is third inorganic layer in the hole
A part and inorganic layer be overlying on above the second metal layer.
Preferably, the thickness of the inorganic layer of the invention is identical as the thickness of step.
Preferably, the invention also includes buffer layers, and the buffer layer is between the substrate and the first metal layer.
The present invention also provides a kind of manufacturing methods of organic electroluminescence device, this method comprises:
S01: the first metal layer is formed on substrate；
S02: the first inorganic layer, semiconductor layer and the second inorganic layer are formed on the first metal layer；
S03: second metal layer is formed on second inorganic layer；
S04: third inorganic layer and the first organic layer are formed in the second metal layer；
Wherein, be formed with through-hole on the third inorganic layer, the through-hole in step-like, including the first hole, step and
Second hole, the minimum diameter in second hole are greater than the maximum gauge in first hole.
Preferably, the S04 of the invention specifically:
S041: form a film third inorganic layer in the second metal layer, carries out first time etching to the third inorganic layer,
The a part for etching the third inorganic layer, there are certain thickness inorganic layer, the thickness of the inorganic layer is less than the third
The film thickness of inorganic layer；
S042: form a film the first organic layer on the third inorganic layer, forms the first organic layer pattern；
S043: it uses first organic layer pattern to carry out second to the third inorganic layer as photoresist and etches, move
Except inorganic layer, the through-hole with step is formed.
Preferably, the thickness of the film thickness and the inorganic layer with a thickness of the third inorganic layer of the step of the invention
Difference.
Preferably, the S01 of the invention further include:
S01: form a film buffer layer on the substrate；
S02: form a film the first metal layer on the buffer layer.
Preferably, the S02 of the invention specifically:
S021: successively form a film the first inorganic layer and semiconductor layer on the first metal layer, forms semiconductor layer pattern；
S022: form a film the second inorganic layer on the semiconductor layer, sequentially forms the second inorganic layer pattern and first inorganic
Layer pattern；Alternatively, being initially formed the first inorganic layer pattern, then second inorganic layer that forms a film on the semiconductor layer, the second nothing is formed
Machine layer pattern.
Preferably, hole is also formed on the third inorganic layer of the invention, the hole is formed in described second and etches,
And it is also formed with inorganic layer, the inorganic layer is a part of third inorganic layer, and the inorganic layer is overlying on the second metal layer
Top and thickness is identical as the thickness of step.
The present invention solves the problems, such as that LTPS can not be applied to large-size glass, and the present invention also can be used such as IGZO backboard
OLED device is driven, simultaneously because IGZO backboard does not need to adulterate, simple process being capable of save the cost raising production efficiency.
Third inorganic layer of the invention is by twice etching, so that metallic copper exposed after existing processing procedure has one layer of inorganic guarantor
Shield, to solve the problems, such as that metallic copper exposed in the prior art is oxidized, improves device lifetime and yield.In addition, this
Invention can improve pixel storage capacitor according to thicknesses of layers by the first inorganic layer of exchange and the second inorganic layer etching sequence
Value improves yield, meanwhile, the one layer of buffer layer that form a film above substrate can prevent influence of the substrate impurity to semiconductor layer.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of organic electroluminescence device of the present invention；
Fig. 2 is the film forming the first metal layer schematic diagram of organic electroluminescence device of the present invention；
Fig. 3 is the first inorganic layer of film forming and semiconductor layer schematic diagram of organic electroluminescence device of the present invention；
Fig. 4 is film forming the second inorganic layer schematic diagram of organic electroluminescence device of the present invention；
Fig. 5 is the film forming second metal layer schematic diagram of organic electroluminescence device of the present invention；
Fig. 6 is the film forming third inorganic layer schematic diagram of organic electroluminescence device of the present invention；
Fig. 7 is film forming the first organic layer schematic diagram of organic electroluminescence device of the present invention；
Fig. 8 is the secondarily etched hole schematic diagram of organic electroluminescence device of the present invention；
Fig. 9 is the film forming anode layer schematic diagram of organic electroluminescence device of the present invention；
Figure 10 is film forming the second organic layer schematic diagram of organic electroluminescence device of the present invention.
Figure 11 is the film forming third organic layer schematic diagram of organic electroluminescence device of the present invention；
Figure 12 is that schematic diagram is completed in the encapsulation of organic electroluminescence device of the present invention.
Specific embodiment
In the following with reference to the drawings and specific embodiments, the present invention is furture elucidated, it should be understood that these embodiments are merely to illustrate
It the present invention rather than limits the scope of the invention, after the present invention has been read, those skilled in the art are to of the invention each
The modification of kind equivalent form falls within the application range as defined in the appended claims.
Organic electroluminescence device 100 of the invention can be used IGZO backboard driving OLED device, therefore solve
LTPS can not be applied to the problem of large-size glass, while IGZO backboard does not need to adulterate, simple process, can save the cost mention
High efficiency.
As shown in Figure 1, organic electroluminescence device 100 includes:
Substrate 1, substrate 1 can be glass substrate and be also possible to flexible base board.
The first metal layer 2 to form a film above substrate 1, wherein the first metal layer 2 can be bottom be Ti, top layer Cu,
Be also possible to bottom be Mo, top layer Cu, be also possible to other metal materials.
At least three layers of inorganic layer to form a film above the first metal layer 2, at least three layers of inorganic layer include the first inorganic layer 3,
Second inorganic layer 5 and third inorganic layer 7.
Specifically, first inorganic layer 3 of the film forming above the first metal layer 2, wherein the first inorganic layer 3 can be bottom
For SiNx, top layer SiO2Double-layer structure, be also possible to by SiO2It constitutes, or other materials.
The semiconductor layer 4 to form a film above the first inorganic layer 3, wherein semiconductor layer 4 is using IGZO semiconductor layer.
The second inorganic layer 5 to form a film above semiconductor layer 4, wherein the second inorganic layer 5 can be by SiO2It constitutes, it can also
To be bottom for SiO, middle layer SiNx, top layer SiO2Three-decker, can also be made of other materials.
The second metal layer 6 to form a film above the second inorganic layer 5, wherein second metal layer 6 can be bottom and be Ti, push up
Layer be Cu, be also possible to bottom be Mo, top layer Cu, be also possible to other metal materials.
The third inorganic layer 7 to form a film above second metal layer 6, wherein it is SiO that third inorganic layer 7, which can be bottom,2、
Top layer is SiNxDouble-layer structure, be also possible to bottom be SiO2, middle layer SiNx, top layer SiO2Three-decker, may be used also
To be by Al2O3Composition, third inorganic layer 7 can also be made of other materials.
As shown in Figure 1, through-hole 13 is formed on third inorganic layer 7, and through-hole 13 is formed by twice etching,
For through-hole 13 in step-like, through-hole 13 includes the first hole 13a, step 14 and the second hole 13b, and the minimum diameter of the second hole 13b is big
In the maximum gauge of the first hole 13a.
As shown in fig. 6, being the hole for formed after first time etching to third inorganic layer 7 in dotted line frame, hole is terraced
Shape, in hole bottom there are the inorganic layer 71 with a thickness of h, the thickness h positioned at the inorganic layer 71 of hole bottom is less than third inorganic layer 7
Film thickness H.
As shown in figure 8, in dotted line frame, be part where the hole formed after the first time etching to third inorganic layer 7 into
The through-hole 13 formed after second of etching of row, after second etches, by hole bottom, there are the inorganic layers 71 with a thickness of h to move completely
It removes, and forms the step 14 having with a thickness of h '.Preferably, the h ' of 14 thickness of step be third inorganic layer 7 film thickness H with it is previous
It is located at the difference of the thickness h of the inorganic layer 71 of hole bottom after secondary etching.
By carrying out twice etching to third inorganic layer 7, after the completion of etching first time, through-hole 13 is not cut through, also
Retain inorganic layer 71, will not be aoxidized in second metal layer 6 without exposed second metal layer 6 when carrying out subsequent technique
Metallic copper removes inorganic layer 71 after second etches, and through-hole 13 is formed, to solve the OLED using IGZO backboard
The problem of exposed metallic copper is oxidized in device, to improve device lifetime and yield.
In other examples, hole 131, and third inorganic layer 7 are also formed on third inorganic layer 7 of the invention
It further include inorganic layer 72, by inorganic layer 72 in step-like, inorganic layer 72 is a part of third inorganic layer 7, inorganic layer in hole 131
72 are overlying on the top of second metal layer 6 and its thickness is identical as the thickness of step 14.
Likewise, protecting the exposed part of second metal layer 6 in the prior art by remaining inorganic layer 72, preventing
The exposed part of second metal layer 6 is aoxidized in subsequent technique and is damaged, to influence device lifetime and yield.
In other examples, as shown in Figure 1, organic electroluminescence device 100 of the invention can also include:
The first organic layer 8 to form a film above third inorganic layer 7.
The anode layer 9 to form a film above the first organic layer 8, wherein anode layer material be bottom be ITO, middle layer Ag,
Top layer is the three-decker of ITO, can also be made of other materials.
The second organic layer 10 to form a film above anode layer 9；The third organic layer 11 to form a film above the second organic layer 10；
Form a film functional layer above third organic layer 11, cathode layer, it is preferable that functional layer include hole injection layer, hole injection layer,
Hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, functional layer, which also can according to need, to be increased or decreased accordingly
Layer.Functional layer, cathode layer can be made by means such as vapor depositions.
Encapsulating structure, encapsulating structure is encapsulated using cover board 12 or thin-film package or other means encapsulation.
In other examples, can also form a film between substrate 1 and the first metal layer 2 has buffer layer, buffer layer
Material is the double-layer structure that bottom is SiO2, top layer is SiNx, can also use other materials.
In the following, by Fig. 2-Figure 12 to the manufacturing method of organic electroluminescence device 100 provided in an embodiment of the present invention into
Row explanation.
As shown in Fig. 2-Figure 12, this method comprises:
S01: providing substrate 1, and substrate 1 is glass substrate or flexible base board, and side's film forming the first metal layer 2, makes on substrate 1
Pattern with first of light shield etching first metal layer 2 and needed for being formed.
S02: first inorganic layer 3 that forms a film above the first metal layer 2, semiconductor layer 4 and the second inorganic layer 5.
S03: form a film second metal layer 6 above the second inorganic layer 5, simultaneously using the 5th light shield etching second metal layer 6
Pattern needed for being formed.
S04: form a film third inorganic layer 7 above second metal layer 6, and form a film the first organic layer above third inorganic layer 7
8。
Wherein, it is formed with through-hole 13 on third inorganic layer 7, through-hole 13 is step type, and in step-like, through-hole 13 includes the
One hole 13a, step 14 and the second hole 13b, the minimum diameter of the second hole 13b are greater than the maximum gauge of the first hole 13a.And lead to
Hole 13 is formed by twice etching.
Specifically, step S04 specifically:
S041: form a film third inorganic layer 7 above second metal layer 6, is carried out using the 6th light shield to third inorganic layer 7
It etches for the first time, etches a part of third inorganic layer 7, which forms hole, wherein hole is inverted trapezoidal, is stayed in hole bottom
There is the inorganic layer 71 with a thickness of h, the film thickness H of third inorganic layer 7 is less than positioned at the thickness h of the inorganic layer 71 of hole bottom.
S042: form a film the first organic layer 8 above third inorganic layer 7, is carried out using the 7th light shield to the first organic layer 8
Exposure development simultaneously forms required pattern.
S043: the pattern of the first good organic layer 8 of use production carries out second to third inorganic layer 7 as photoresist and carves
Erosion, performs etching the hole formed in step S041 again, forms stepped through-hole 13, and through-hole 13 has step 14.?
After secondarily etched, by hole bottom there are removing completely with a thickness of the inorganic layer 71 of h, and the step 14 having with a thickness of h ' is formed.
Preferably, the film thickness H and the inorganic layer 71 after preceding primary etching positioned at hole bottom that the h ' of 14 thickness of step is third inorganic layer 7
The difference of thickness h.
In other examples, hole 131 is also formed on third inorganic layer 7, hole 131 is formed in step S043
, it is formed in second of etching.After second etches, inorganic layer 72 is formed on third inorganic layer 7, inorganic layer 72 is third
A part of inorganic layer 7, inorganic layer 72 is overlying on 6 top of second metal layer and thickness is identical as the thickness of step 14.
In other examples, step S01 can also include:
S011: side's film forming buffer layer on substrate 1.
S012: side's film forming the first metal layer 2 on the buffer layer using first of light shield etching first metal layer 2 and is formed
Required pattern.
In other examples, step S02 can be with specifically:
S021: form a film the first inorganic layer 3 above the first metal layer 2, and form a film semiconductor layer 4 above the first inorganic layer 3,
Wherein, semiconductor layer is IGZO semiconductor layer, the pattern using second light shield etching semiconductor layer 4 and needed for being formed.
S022: form a film the second inorganic layer 5 above semiconductor layer 4, uses the second inorganic layer of third road light shield etching 5 and shape
At required pattern, the pattern needed for the 4th light shield etches the first inorganic layer 3 and formed is reused.
As the embodiment that can be replaced, step S022 be may also is that
Pattern needed for being etched the first inorganic layer 3 using third road light shield and formed, forms a film second above semiconductor layer 4
Inorganic layer 5 reuses the pattern needed for the 4th light shield etches the second inorganic layer 5 and formed.
In other examples, the manufacturing method of organic electroluminescence device 100 of the invention further include:
S05: form a film anode layer 9 above the first organic layer 8, needed for being etched anode layer 9 using the 8th light shield and formed
Pattern.
S06: form a film the second organic layer 10 above anode layer 9, is exposed using the 9th light shield to the second organic layer
Develop and forms required pattern.
S07: above the second organic layer 10 form a film third organic layer 11, using the tenth light shield to third organic layer 11 into
Row exposure development simultaneously forms required pattern.
S08: also form a film active ergosphere, cathode layer above third organic layer 11, it is preferable that functional layer includes hole injection
Layer, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer, functional layer also can according to need increasing
Add deduct less corresponding layer.
S09: encapsulation；Using the encapsulation of cover board 12 or thin-film package.
The present invention can also use IGZO backboard such as to drive OLED device, and large-size glass can not be applied to by solving LTPS
The problem of, also due to IGZO does not need to adulterate, simple process being capable of save the cost raising production efficiency.
Third inorganic layer of the invention is by twice etching, so that metallic copper exposed after existing processing procedure has one layer of inorganic guarantor
Shield, to solve the problems, such as that metallic copper exposed in the prior art is oxidized, improves device lifetime and yield.In addition, this
Invention can improve pixel storage capacitor according to thicknesses of layers by the first inorganic layer of exchange and the second inorganic layer etching sequence
Value improves yield, meanwhile, the one layer of buffer layer that form a film above substrate can prevent influence of the substrate impurity to semiconductor layer.
Claims (8)
1. a kind of organic electroluminescence device (100), comprising:
Substrate (1)；
The first metal layer (2) being formed in above the substrate (1)；
The inorganic layer being formed in above the first metal layer (2), the inorganic layer include at least three layers of inorganic layer, it is described at least
Three layers of inorganic layer include the first inorganic layer (3), the second inorganic layer (5) and third inorganic layer (7)；
The semiconductor layer (4) being formed between the first inorganic layer (3) and the second inorganic layer (5)；
The second metal layer (6) being formed between the second inorganic layer (5) and third inorganic layer (7)；
Wherein, it is formed with through-hole (13) on the third inorganic layer (7), the through-hole (13) is in step-like, the through-hole (13)
It is greater than described first including the first hole (13a), step (14) and the second hole (13b), the minimum diameter of second hole (13b)
The maximum gauge in hole (13a)；
The organic electroluminescence device (100) further includes hole (131), hole (131) by inorganic layer (72) in step-like, it is inorganic
Layer (72) is a part of third inorganic layer (7) and inorganic layer (72) is overlying on above the second metal layer (6).
2. organic electroluminescence device according to claim 1, which is characterized in that the thickness and step of inorganic layer (72)
(14) thickness is identical.
3. organic electroluminescence device according to claim 1, which is characterized in that it further include buffer layer, the buffer layer
Between the substrate (1) and the first metal layer (2).
4. a kind of manufacturing method of organic electroluminescence device (100), this method comprises:
S01: the first metal layer (2) are formed on substrate (1)；
S02: the first inorganic layer (3), semiconductor layer (4) and the second inorganic layer (5) are formed on the first metal layer (2)；
S03: second metal layer (6) are formed on second inorganic layer (5)；
S04: third inorganic layer (7) and the first organic layer (8) are formed on the second metal layer (6)；
Wherein, it is formed with through-hole (13) on the third inorganic layer (7), the through-hole (13) is in step-like, including the first hole
The minimum diameter of (13a), step (14) and the second hole (13b), second hole (13b) are greater than first hole (13a)
Maximum gauge；
The S04 specifically:
S041: forming a film third inorganic layer (7) on the second metal layer (6), carries out for the first time to the third inorganic layer (7)
Etching, etches a part of the third inorganic layer (7), there are certain thickness inorganic layer (71), the thickness of inorganic layer (71)
Less than the film thickness of the third inorganic layer (7)；
S042: forming a film the first organic layer (8) on the third inorganic layer (7), forms the first organic layer pattern；
S043: it uses first organic layer pattern to carry out second to the third inorganic layer (7) as photoresist and etches, remove
Inorganic layer (71) forms the through-hole (13) with step (14).
5. manufacturing method according to claim 4, which is characterized in that the step (14) it is inorganic with a thickness of the third
The difference of the thickness of the film thickness and inorganic layer (71) of layer (7).
6. manufacturing method according to claim 4, which is characterized in that the S01 further include:
S011: form a film buffer layer on the substrate (1)；
S012: the first metal layer (2) are formed a film on the buffer layer.
7. the manufacturing method according to claim 4 or 6, which is characterized in that the S02 specifically:
S021: successively form a film the first inorganic layer (3) and semiconductor layer (4) on the first metal layer (2), forms semiconductor layer
Pattern；
S022: form a film the second inorganic layer (5) on the semiconductor layer (4), sequentially forms the second inorganic layer pattern and the first nothing
Machine layer pattern；Alternatively, being initially formed the first inorganic layer pattern, then form a film on the semiconductor layer (4) the second inorganic layer (5), shape
At the second inorganic layer pattern.
8. manufacturing method according to claim 4, which is characterized in that be also formed with hole on the third inorganic layer (7)
(131), hole (131) are formed in described second and etch, and are also formed with inorganic layer (72), and inorganic layer (72) is third inorganic layer
(7) a part, inorganic layer (72) is overlying on above the second metal layer (6) and thickness is identical as the thickness of step (14).
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| KR100683676B1 (en) * | 2004-06-30 | 2007-02-20 | 삼성에스디아이 주식회사 | OLED with improved via hole |
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Effective date of registration: 20200827 Address after: No.7 Tianyou Road, Qixia District, Nanjing City, Jiangsu Province Patentee after: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Address before: No.7, Tianyou Road, Nanjing LCD Valley, Qixia District, Nanjing City, Jiangsu Province Co-patentee before: NANJING CEC PANDA LCD TECHNOLOGY Co.,Ltd. Patentee before: NANJING CEC PANDA FPD TECHNOLOGY Co.,Ltd. Co-patentee before: Nanjing East China Electronic Information Technology Co.,Ltd. |