CN101960639A - OLED device with short reduction layer - Google Patents
OLED device with short reduction layer Download PDFInfo
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- CN101960639A CN101960639A CN2009801069529A CN200980106952A CN101960639A CN 101960639 A CN101960639 A CN 101960639A CN 2009801069529 A CN2009801069529 A CN 2009801069529A CN 200980106952 A CN200980106952 A CN 200980106952A CN 101960639 A CN101960639 A CN 101960639A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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Abstract
A method of making an OLED device includes providing a substrate having a first electrode into a controlled environment; baking the substrate in the controlled environment to remove moisture; forming an inorganic short reduction layer over the moisture reduced substrate in the controlled environment after baking the substrate, such short reduction layer having a resistivity greater than the resistivity of the first electrode; forming an organic electroluminescent media over the moisture reduced substrate in the controlled environment; forming a second electrode over the organic electroluminescent media in the controlled environment wherein the OLED device is formed; and encapsulating the OLED device.
Description
Technical field
The present invention relates in OLED device and display, reduce short circuit.
Background technology
In the simplest form, organic electroluminescent (EL) device comprises first electrode of the negative electrode that is arranged on the anode that injects as the hole and is used as the electronics injection and the organic electroluminescent medium between second electrode.The organic electroluminescent medium is supported the reorganization of hole and electronics, thereby produces the light emission.These devices generally also are known as Organic Light Emitting Diode or OLED.Basic organic EL is at United States Patent (USP) 4,356, describes to some extent in No. 429.In order to make up the pixelation OLED display device (pixelated OLED display device) that can be used as such as displays such as TV, computer monitor, cell phones displays or digital camera displays, single organic EL element can be listed in the matrix pattern as line of pixels.These pixels all can be made for the identical color of emission, thereby produce monochrome display, also they can be made for and produce multiple color, for example red, green, blue (RGB) three pixel display.Also made the OLED display device that has active matrix (AM) drive circuit, to produce Performance Monitor.The example of this AM OLED display device is disclosed in United States Patent (USP) 5,550, in No. 066.
The organic electroluminescent medium of AM OLED device is made in the system of large-scale vacuum usually.These vacuum systems are designed to produce the moisture with low concentration and the controlled environment of oxygen.This is because of the existence deterioration of general organic electroluminescent device because of moisture.Have this vacuum system be used to make the example of typical fabrication tool of AM OLED device as shown in Japanese patent application JP2006260939 (A).In Japanese patent application JP2006260939 (A), as seen, it is desirable to comprise baking chamber usually, so that before being formed with organic electroluminescent layer, remove the moisture that may be trapped within substrate or the active matrix circuit layer.In long-term use or storage, this moisture that retains can cause the deterioration of OLED device.It is sustainable more than 2 hours typically to cure operation, and temperature is 200 ℃ to 250 ℃.
When making OLED display, for example the problem of particle contamination in the organic EL Material or scratch can cause the defective of display.One type the defective that is caused by particle contamination or scratch is the short circuit that connects the thin organic material of anode and negative electrode.The pixel (dark pixel) that short circuit between anode and the negative electrode causes light emitting pixel (dead pixel) not or luminosity to reduce.The structure that is used to improve the robustness (robustness) at circuit defect, is described in No. 707 at United States Patent (USP) 7,183 by people such as Tyan.People such as Tyan have described and have been provided with inorganic short circuit between in organic electroluminescent medium and described electrode one and reduce layer.Have anomalous resistivity and thickness and can reduce leakage current thereby short circuit reduces layer by circuit defect.Described some kinds of Available Materials comprise the metal oxide of molybdenum oxide and partially conductive and the mixture of insulation oxide, fluoride and sulfide.
But, have been found that short circuit reduces layer deterioration when being subjected to curing.Therefore, need new manufacturing system and method manufacturing to have the OLED device that short circuit reduces layer and has low retain moisture.
Summary of the invention
An object of the present invention is to provide to make and have the improving one's methods of OLED display device that short circuit reduces layer.Another object of the present invention is to reduce the deterioration that short circuit reduces layer in manufacture process.Another purpose of the present invention is to reduce the moisture or the solvent contamination of OLED display device, thereby reduces the infringement to organic electroluminescent device.
These purposes are achieved by the method for following manufacturing OLED device, and described method comprises:
(a) substrate that will have first electrode provides to controlled environment;
(b) in described controlled environment, cure substrate to remove moisture;
(c) after curing described substrate, in described controlled environment, in the substrate that moisture reduces, form inorganic short circuit and reduce layer, described short circuit reduces the resistivity of the resistivity of layer greater than described first electrode;
(d) in described controlled environment, in the substrate that moisture reduces, be formed with the organic electro luminescent medium;
(e) form therein in the described controlled environment of described OLED device, on described organic electroluminescent medium, form second electrode; With
(f) the described OLED device of encapsulation.
Description of drawings
Fig. 1 is the sectional view of a part of the pixel of OLED device of the present invention;
Fig. 2 is the block diagram that shows the method for manufacturing OLED device of the present invention;
Fig. 3 is the manufacturing system that is used to make the OLED device of the present invention.
Visual because the size (for example Ceng thickness) of some device feature usually in sub-micrometer range, is therefore amplified accompanying drawing, and less than accurately in size.
Embodiment
In Fig. 1, shown the OLED device that short circuit reduces layer that has of the present invention.The figure illustrates the part of the pixel of active array display unit.The OLED device comprises OLED element 30, and OLED element 30 is driven by transistor 140.Transistor 140 is parts of active matrix driving circuit, and described source matrix driving circuit for example is generally used for the driving OLED display and well known in the art.Other example of this active array type OLED device is found in US patent application publication 2007-0257606A1.An embodiment of the invention have been represented in the use of active matrix circuit.But, the invention is not restricted to active array type OLED device, and those skilled in the art also can implement the present invention by can't help the OLED device (that is passive matrix OLED device) that active matrix circuit drives.
The OLED device is made in substrate 100.Available substrate by glass (for example comprises
Or
Type glass) substrate of making.Other the known substrate that is used for the OLED device comprises metal forming (for example stainless steel foil), Silicon Wafer and plastic-substrates.Those skilled in the art also can be used for the present invention with above-mentioned base material.If the OLED device is formed in launches light (that is, top-emission structure) on the direction relative, then can adopt opaque substrate with substrate.
To describe the transistor driving part of OLED device now in detail.The many dissimilar transistor that is used for the driving OLED device is being known in the art.Here shown bottom gate type transistor (bottom gate type amorphous silicon based transistor) based on amorphous silicon.This transistorized being configured in this area is known.The invention is not restricted to such transistor, comprise polysilicon class and transistorized many other driving transistorss of top gate type but also can use.Transistor 140 is formed on the substrate 100.Known in this area, can between substrate 100 and transistor 140, adopt the various barrier layers (not shown) that comprises (for example) silicon nitride or silica in case of necessity.Transistor 140 is formed by three terminals: grid 143, terminal 146 and terminal 149.Grid 143 is by forming such as conductive materials such as Cr, Mo or Al.According to the polarity of OLED element and remaining active matrix pixel drive circuit (not shown), terminal 146 and 149 can be constructed to (for example) source terminal or drain terminal.Terminal 149 also can form the part that the power line (not shown) of electric current is provided to the OLED element.Transistor 140 also comprises semiconductor 141.Terminal 146 and 149 comprises conductor, for example aluminum or aluminum alloy (for example Al:Nd) or also can be formed by stacked sandwich such as conductive material (for example, Al or Al:Nd) and Mo, Cr or Ti.Semiconductor 141 can comprise for example amorphous silicon.Semiconductor 141 is made up of doped region 141b and non-doped region 141a.Semiconductor 141 separates by insulator layer 201 and grid 143, and described insulator layer 201 can be formed by for example silicon nitride etc.On semiconductor 140, form insulator layer 202.Insulator layer 202 comprises and stops subgrade 202a that the described subgrade 202a that stops is formed by for example inorganic layer (for example silicon nitride).Insulator layer 202 also comprises the complanation subgrade, for example complanation subgrade 202b, but described complanation subgrade 202b can be formed by (photo-patternable) organic material etc. of for example exposure image.Select as another kind, insulator layer 202 also can be formed by subgrade more or less.The opening 145 that forms in the insulator layer 202 is in order to allow to be electrically connected to the terminal 146 of transistor 140.
On insulator layer 202, be formed with bottom electrode 181.Bottom electrode 181 can be by tin indium oxide (ITO) or other transparent conductive oxide, for example indium zinc oxide (IZO) or aluminium-doped zinc oxide formation such as (AZO).When with transparent substrates 100 (for example glass) when being used in combination, this transparent lower electrode material makes and can observe light emission from the OLED device by substrate.This structure is known to be end emission structure.(being known as two-way emission constructs) photoemissive alternative constructions of observation on both direction also is well known in the art and can be applied to the present invention from relative direction (be known as and push up the emission structure) or while.Bottom electrode can be constructed to the anode of OLED element 30, but being arranged in this area of negative electrode that alternatively bottom electrode is configured to Organic Light Emitting Diode is known, and can be applied to the present invention.The edges cover of bottom electrode 181 has insulator layer 203.This insulator layer 203 can be by (for example) but the polymer architecture of exposure image and being used to prevents the high electric field at the edge of bottom electrode 181.The similar insulator layer that is used for this purpose is at United States Patent (USP) the 6th, 246, describes to some extent in No. 179.It is useful using insulator layer 203, but optional for successfully implementing the present invention.
Short circuit reduces layer 350 and is formed on the bottom electrode 181.The preferred composition that short circuit reduces layer is tin indium oxide (ITO) and zinc sulphide (ZnS) silicon dioxide (SiO
2) mixture (this mixture is at the following ZSO that is known as).Short circuit reduces layer and can be formed by cosputtering by an ITO sputtering target and the 2nd ZSO sputtering target.Selecting as another kind, can be single compound sputtering target with the material mixing of various compositions.Can be used for other material description to some extent in US patent application publication 2005-0225234A1 that short circuit reduces layer.
Reduce on the layer 120 in short circuit, be formed with organic electro luminescent medium 310.Those skilled in the art can be successfully applied to the present invention with the multiple different organic electroluminescent media constructions that has that is known in the art.Though organic electroluminescent medium 310 is shown as simple layer, it preferably includes a plurality of subgrades, for example hole transport subgrade and electric transmission subgrade.Organic electroluminescent medium 310 can comprise extra subgrade, and for example subgrade and luminous subgrade are injected in the hole.For example, at United States Patent (USP) 4,356, basic two-layer electroluminescent medium device architecture has been described in No. 429.A representative configuration of organic electroluminescent medium 310 comprises hole transport subgrade that contains NPB (4,4 '-two [N-(how basic 1-is)-N-phenyl amino] biphenyl) and the electric transmission subgrade that contains AlQ (three (oxine) aluminium).In addition, usefully between anode and hole transport subgrade, provide the hole to inject subgrade usually.Hole-injecting material can be used for promoting the injection of hole in hole transmission layer.Known in the art have a variety of hole-injecting materials.As United States Patent (USP) 6,720, No. 573 described, and six azepine benzo phenanthrene derivatives can be used as hole-injecting material.Useful especially compound comprises that as shown in the formula six azepine benzo phenanthrene derivatives shown in the K-1 wherein each R is selected from independently or simultaneously by hydrogen atom, C1-12 hydrocarbon, halogen, alkoxyl, arylamine, ester, acid amides, aromatic hydrocarbon, heterocyclic compound, nitro and nitrile (CN) the basic group of forming.
Formula K-1:
It is six cyano group, six azepine benzophenanthrenes (CHATP) that six azepine benzo phenanthrene derivatives are injected in a kind of useful especially hole, shown in K-2:
Formula K-2:
On organic electroluminescent medium 310, form top electrode 320.Though be shown as simple layer, top electrode 320 also can comprise a plurality of subgrades.Known some kinds of top electrodes structure in this area, and can be applied to the present invention by those skilled in the art.A structure of top electrode 320 comprises and promotes Li that electronics about 0.5nm that inject and that contact with organic electroluminescent medium 310 is thick or the subgrade of LiF, is the subgrade of the thick A1 of about 100nm to 400nm subsequently.Also can comprise further feature commonly used in the OLED device manufacturing field, for example moistureproof encapsulation (not shown) or drier (not shown).OLED element 30 is formed by the organic electroluminescent medium 310 that limits by the opening in the insulating barrier 203, bottom electrode 181 and top electrode 320.Applying electric field between bottom electrode 181 and top electrode 320 will cause OLED element 30 to produce light emission 390.
Instruct in US patent application publication 2005-0225234A1 as people such as Tyan, by introducing resistor assembly in the short-channel between electrode, short circuit reduces layer 350 leakage current that can reduce by little partial short-circuit (for example short circuit that is caused by particle contamination).It is high-resistance that short circuit reduces layer, and its resistance is greater than the resistance of first electrode and second electrode.It is desirable to, the resistance that short circuit reduces layer 350 enough height so that the bad leakage current by short circuit is reduced to less than the electric current by functional OLED element 30.But if short circuit reduces layer too high in resistance, then the electric current by whole OLED element 30 will reduce, thereby cause working voltage to increase.On the other hand, low excessively if short circuit reduces the resistance of layer, then reduce in the layer lateral current will take place in short circuit, this can cause crosstalking between adjacent emitting area or pixel.The expectation resistance that people such as Tyan have also instructed the short circuit that is used to reduce electric current to reduce layer depends on the size of the size of radiated element and the electric current by the OLED element drives, and its target is below 10% of electric current that the electric current by short circuit is reduced to the OLED that flows through.The area that also depends on short circuit by the electric current of short circuit.People such as Tyan have described 1 micron * 1 micron exemplary deficiencies area.But actual defective can be obviously littler, for example 0.1 micron * below 0.1 micron.
Use for typical high resolution display, the emitting area of each pixel can be about 0.1mm * 0.1mm or 1 * 10
-4Cm
2The peak pixel electric current of typical OLED display can be 1 microampere (μ A) to 10 microamperes (μ A).Therefore, peak current density is about 10mA/cm
2To 100mA/cm
2Short circuit reduces the thickness that layer is constructed to preferably have 2nm to 500nm, more preferably has the thickness of 20nm to 200nm.
For the purposes of the present invention, the preferred upper limit that short circuit reduces the resistivity of layer will be considered to such resistance: promptly when when peak current moves, surpass this resistance tangible voltage decline will take place.Because according to efficient and layer structure, the OLED element moves under the voltage of 3V to 20V usually, the obvious amount of voltage can be considered to the extra voltage of 2V.
Reducing the resistance of layer (R) can be determined by following equation for the short circuit of given pixel:
(equation 1)
Wherein, ρ is a resistivity, and t is the layer thickness that short circuit reduces layer, A
PixelIt is the emission area of pixel layer.The voltage (V) of crossing over whole short circuit minimizing layer in operation area (not comprising the short circuit area) is so can be drawn by following equation:
V＝I
D×ρ×t
(equation 2)
I wherein
DIt is the current density of per unit area.
As can be seen, voltage descends relevant with current density from equation 2, and directly not relevant with elemental area.Therefore, the voltage pole limit value does not depend on the size of pixel.For the preferred upper limit that realizes 2V and thickness and the 10mA/cm of 20nm
2Peak current density, the resistivity that short circuit reduces layer should preferably be less than or equal to 1 * 10
8Ω cm.More preferably, in order to realize appreciating less than the voltage of 0.2V, the upper limit of resistivity should be less than 1 * 10
7Ω cm.
Preferred lower limit depends on the concrete condition of application similarly.The resistance that short circuit reduces layer is higher than the top electrode of OLED device or any the resistance in the bottom electrode.For example, the tin indium oxide (ITO) that is generally used for bottom electrode generally has 5 * 10
-4The resistivity that Ω cm is following.As previously mentioned, short circuit minimizing layer preferably will be reduced to less than 10% of normal pixel running current by the electric current of short circuit.So the lower limit of resistivity can draw from following equation:
(equation 3)
I wherein
The limitBe the ideal limit that allows by the electric current of short circuit, A
Short circuitIt is the area of short circuit.For following situation: pixel have the thick short circuit of 200nm reduce layer, 0.1 micron * 0.1 micron short circuit, operation under 10V, allow 10% the limit of 10 microamperes peak current, short circuit to reduce layer preferably to have resistivity greater than 50 Ω cm.More preferably, reduce the situation of 10% current limitation of layer and 1 microampere for the short circuit with 20nm thickness, the resistivity that short circuit reduces layer should be greater than 5 * 10
3Ω cm.Further increase to 1 micron at the short circuit area and multiply by under 1 micron the situation, can adopt 5 * 10
5The lower limit of Ω cm.
Do not have precise patterning on a plurality of pixels if short circuit minimizing layer will be applied in, then also expectation limits pixel crosstalking to pixel.The details of design, for example Pixel Dimensions and spacing, running current and pixel driving current are still depended in definite requirement.In this case, short circuit minimizing layer should have enough big resistivity to limit any crosstalk effect.
Use description to the exemplary film that short circuit reduces layer now.By from comprising 68.3 weight %In
2O
3, 20.9 weight %ZnS, 7.6 weight %SnO
2With 3.2 weight %SiO
2Diameter be that two inches single target sputter prepares short circuit and reduces tunic (sample S1).Sputter under the ambient pressure of about 4.5 millitorrs and carry out, blow the argon gas mixture that contains 5.2% oxygen simultaneously.The RF magnetron source is used for being the sputtering target energy supply down at 80 watts.Also preparation contrast simultaneously is with film (sample C1, C2 and C3), accepts to continue two hours curing subsequently under the temperature of 220 ℃, 130 ℃ and 80 ℃.The resistive performance that described film obtains is listed in following table 1.
Table 1
As can be seen from Table 1, cure the change that operation causes film properties, and cause comparing with sample A, contrast is lost with the resistivity of sample or is reduced.The loss of resistivity or minimizing are shown as in minimizing efficient aspect the electric current of circuit defect lower in contrasting with sample.In addition, reduce layer at the configuration that does not have to be applied under the situation of precise patterning on a plurality of pixels if be used for wherein short circuit, then the electric current between the pixel will increase, and cause bad pixel to pixel cross-talk.Like this, determined to have the substrate that short circuit reduces layer and should not cure subsequently, therefore as the Japanese patent application JP2006260939 (A) that formerly the describes OLED fabrication tool of being instructed and the being used to method of making the OLED device be not suitable for and have the OLED device that this short circuit reduces tunic.
Forward Fig. 2 now to, will describe now and show the block diagram that is used to make the manufacture method 500 of OLED device of the present invention.Manufacture method 500 comprises provides substrate 100 initiation layers (step 510).These initiation layers comprise that bottom electrode 181, insulator layer 203, insulator layer 202 and all provide the layer of active matrix circuit, for example comprise the transistor 140 of insulator layer 201.The manufacture method that is used to produce these layers that comprise transistor 140 is being known in the art.
The substrate 100 that comprises these initiation layers is loaded onto (step 520) in the controlled environment subsequently.Controlled environment is environment that contains inert environments gas (for example nitrogen or argon gas etc.) or the environment that keeps decompression (vacuum) (for example less than 133Pa, preferably less than 0.133Pa, being more preferably less than 0.133mPa).A plurality of drying boxes and/or vacuum chamber that controlled environment can be drying box, vacuum chamber or directly links to each other or connect by transmitting catheter.Controlled environment can change in manufacture process.For example, controlled environment can be changed into nitrogen environment from reduced pressure atmosphere by the environmental chamber that connects.For purpose of the present disclosure, the controlled environment of any this connection is referred to as " controlled environment ".Preferred controlled environment is sealed vacuum pipe group system (sealed vacuum vessel cluster system) or the vacuum tube system that embarks on journey (in-line vacuum vessel system).This controlled environment helps the subsequent deposition of organic electroluminescent dielectric material, and this organic electroluminescent dielectric material is known in deterioration under the existence that has moisture and oxygen.
In controlled environment, long high temperature is carried out in substrate cure (step 530) subsequently.For example, substrate can be cured under 220 ℃ 2 hours.Thereby carrying out this baking step removes and remains on the substrate surface or suck moisture in the arbitrary layer of substrate.For example, comprise that the layer (as the complanation subgrade 202b of insulator layer 203 and insulator layer 202) of organic material is tending towards absorbing moisture, described moisture can be retained until discharging in baking step (step 530).Moisture that retains in final OLED device or oxygen can make the OLED element in time and deterioration.Therefore, in order to reduce this deterioration, must remove the large quantity of moisture that retains by curing.After curing, be retained in the controlled environment substrate lower with the amount of moisture that keeps follow-up absorption until packaging.
Then, form short circuit and reduce layer (step 540).This step finishes by (for example) above-mentioned sputtering sedimentation.The inventor observes, reduces layer in case form short circuit, and described short circuit reduces layer and can change when being exposed to high temperature.For example, as mentioned above, the resistivity of having observed short circuit minimizing layer can reduce 10 to 1000 times.This loss of resistivity makes short circuit reduce the functioning efficiency step-down of layer aspect the minimizing circuit defect.Therefore, according to the present invention, removing moisture in curing (step 530) process after, the formation (step 540) of short circuit minimizing layer in controlled environment, carries out.This layout makes also avoids short circuit to reduce the deterioration of layer when removing retain moisture.Optionally, for a good control that short circuit is reduced layer deposition is provided, can reduce layer (step 540) and before substrate is cooled off afterwards and forming short circuit curing (step 530).This cooling can be passive (that is, by waiting for certain hour) or initiatively (that is, by reducing ambient temperature or the cooling radiator being provided).Short circuit reduces layer and also can deposit by shadow mask, so that short circuit reduces the light emitting area that layer only is formed on display, and (for example) is not formed on the favored area of the display of making the external electric connector.
In the time of in being in controlled environment, in substrate, be formed with organic electro luminescent medium 310 in the step 550.As previously mentioned, electroluminescent medium 310 preferably is made of a plurality of subgrades that comprise multiple different organic materials.A kind of method for optimizing that is used to deposit these organic electroluminescent dielectric materials makes material evaporate or distillation and condensation in short circuit minimizing layer 350, bottom electrode 181 and substrate 100 for by heating a plurality of sources (graphite boat or the crucible that for example contain organic material) that contain organic material.The organic electroluminescent dielectric material can produce the zone with the light that only is formed on display device by the shadow mask deposition and upward not be formed on the neighboring area that can be used for making the external electric connector.Deposit that the alternative method of organic electro luminescent dielectric material is known in the art, the example of described alternative method comprises from the laser transfer of alms giver's substrate (laser transfer).
Next, still in controlled environment, form top electrode 320 (step 560).Top electrode 320 can pass through several known methods (as evaporation or sputter) and form.Upper electrode material also can produce on the zone only to be formed on light by the shadow mask deposition, and because the neighboring area is not formed on the neighboring area of substrate 100.
Then, in controlled environment, device is encapsulated (step 570).Multiple method for packing well known in the art, and can be applicable to the present invention.For example, can utilize adhesive to be attached in the substrate by glass or metal seal.This step can be included in the packaged device drier is provided, and may attack the moisture and the oxygen of OLED element with further minimizing.Select as another kind, can use the film encapsulation method that forms the low permeability film at top electrode.The OLED device that alumina layer and the poly-terephthaldehyde subsequently who comprises by ald (ALD) method deposition supportted layer has been described among US patent application publication US 2001/0052752A1 and the US 2002/0003403A1, but some examples that applied film encapsulates.In case device is encapsulated, it can be taken out (step 580) safely from controlled environment.
Forward Fig. 3 now to, shown to can be used for implementing fabrication tool 400 of the present invention.Fabrication tool 400 comprises a plurality of vacuum chambers that are used to keep controlled environment that are positioned at around the centre chamber 440.Centre chamber 440 contains the transfer robot 449 that is useful on mobile substrate between vacuum chamber.Load chamber 410 is used for substrate is loaded into controlled environment (step 520).For the decompression controlled environment, load chamber 410 comprises vacuum pump.Load chamber 410 can optionally keep a plurality of substrates.Then, substrate is transferred to baking chamber 420.Optionally, once a plurality of substrates can be transferred in the baking chamber 420.In alternative constructions, the function of load chamber 410 and baking chamber 420 can be attached to single chamber.In baking chamber 420, substrate is raised to high temperature (step 530), for example 220 ℃.Heating can realize by for example method such as radiation heating or Convective Heating in nitrogen, argon or helium environment.As previously mentioned, cure and be used for removing moisture, to realize the low moisture state from substrate.As mentioned above, alternatively substrate is cooled off.
Then, substrate is transferred in the chamber 430, reduces layer (step 540) with the deposition short circuit.During this period, substrate remains in the controlled environment, to keep by curing the low moisture state that (step 530) realizes.Chamber 430 comprises the sputtering source that is used for deposition short circuit minimizing floor 350 in substrate.As mentioned above, deposition is optionally undertaken by shadow mask.
Then, under controlled environment, substrate is transferred in one or more organic deposits chamber 441,442,443,444 and 445 by the transfer robot in the chamber 440 449, to deposit a plurality of organic subgrade (step 550) of organic electro luminescent medium 310.The organic deposit chamber can be contained one or more evaporation sources (or boat) separately, so that organic material is evaporated in the substrate.By being loaded in the shadow mask in each organic deposit chamber, organic subgrade can be deposited on the selective area of substrate.Then, substrate is transferred in the electro-deposition chamber 446, with deposition top electrode 320 (step 560) by transfer robot 449.One or more evaporation sources or sputtering source can be contained in electro-deposition chamber 446, with the upper electrode material of deposit transparent.Then, by transfer robot 449 substrate is moved under controlled environment in the encapsulation chamber 450.By realizing encapsulation (step 570) with seal sealing OLED device, described containment member is for example for being attached with the glass or the metallic plate of adhesive.After encapsulation, substrate is moved in the relief chamber 460, can safely (step 580) be taken out in substrate from controlled environment here.
The parts tabulation
The 30OLED element
100 substrates
140 transistors
141 semiconductors
141a is doped region not
The 141b doped region
143 grids
145 openings
146 terminals
149 terminals
181 electrodes
201 insulating barriers
202 insulator layers
202a stops subgrade
202b complanation subgrade
203 insulator layers
310 electroluminescent mediums
320 top electrodes
350 short circuits reduce layer
The emission of 390 light
400 fabrication tools
410 load chambers
420 baking chamber
Organic deposit chambers 443
Electro-deposition chambers 446
449 transfer robot
460 relief chamber
500 manufacture methods
510 steps
520 steps
530 steps
540 steps
550 steps
560 steps
570 steps
580 steps
Claims (9)
1. method of making the OLED device, described method comprises:
(a) substrate that will have first electrode provides to controlled environment;
(b) in described controlled environment, cure described substrate to remove moisture;
(c) after curing described substrate, in described controlled environment, in the substrate that moisture reduces, form inorganic short circuit and reduce layer, described short circuit reduces the resistivity of the resistivity of layer greater than described first electrode;
(d) in described controlled environment, in the substrate that moisture reduces, be formed with the organic electro luminescent medium;
(e) form therein in the described controlled environment of described OLED device, on described organic electroluminescent medium, form second electrode; With
(f) the described OLED device of encapsulation.
2. the method for claim 1, wherein described short circuit reduces layer and forms by carrying out sputter from one or more targets.
3. method as claimed in claim 2, wherein, described short circuit reduces layer from a target sputter.
4. the method for claim 1, wherein described short circuit reduces layer and comprises In
2O
3, ZnS, SnO
2And SiO
2In one or more.
5. the resistivity that the method for claim 1, wherein described short circuit reduces layer is 50 Ω cm to 1 * 10
8Ω cm.
6. method as claimed in claim 5, wherein, described short circuit reduces the resistivity of layer greater than 5 * 10
3Ω cm.
7. method as claimed in claim 5, wherein, described short circuit reduces the resistivity of layer less than 1 * 10
7Ω cm.
8. the method for claim 1, wherein described controlled environment provides by the vacuum equipment with one or more chambers.
9. the method for claim 1, wherein described curing under 80 ℃ to 220 ℃ temperature carried out.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/039,970 US20090220680A1 (en) | 2008-02-29 | 2008-02-29 | Oled device with short reduction |
| US12/039,970 | 2008-02-29 | ||
| PCT/US2009/001098 WO2009110965A1 (en) | 2008-02-29 | 2009-02-20 | Oled device with short reduction layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101960639A true CN101960639A (en) | 2011-01-26 |
Family
ID=40637145
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009801069529A Pending CN101960639A (en) | 2008-02-29 | 2009-02-20 | OLED device with short reduction layer |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20090220680A1 (en) |
| EP (1) | EP2248204A1 (en) |
| JP (1) | JP2011513915A (en) |
| KR (1) | KR20100118134A (en) |
| CN (1) | CN101960639A (en) |
| WO (1) | WO2009110965A1 (en) |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2011513915A (en) | 2011-04-28 |
| WO2009110965A1 (en) | 2009-09-11 |
| US20090220680A1 (en) | 2009-09-03 |
| EP2248204A1 (en) | 2010-11-10 |
| KR20100118134A (en) | 2010-11-04 |
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Application publication date: 20110126 |