CN107591475A - High power LED device and LED chip die-bonding method - Google Patents
High power LED device and LED chip die-bonding method Download PDFInfo
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- CN107591475A CN107591475A CN201710910262.5A CN201710910262A CN107591475A CN 107591475 A CN107591475 A CN 107591475A CN 201710910262 A CN201710910262 A CN 201710910262A CN 107591475 A CN107591475 A CN 107591475A
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Abstract
The invention provides a kind of high power LED device and LED chip die-bonding method, the high power LED device, including chip and substrate, the back side of chip, which interlocks, is better than some first metal bumps of the first solder bump provided with some first solder bumps and heat conductivility, the second solder bump is correspondingly provided with substrate and heat conductivility is better than the second metal bump of the second solder bump, each first solder bump is weldingly connected with corresponding second solder bump, and each first metal bump is connected with the pressing of corresponding second metal bump.The present invention by the first solder bump and the second solder bump by being connected to form weld layer；So that the first metal bump is connected to form thin metal layer with the second metal bump；And then weld layer and thin metal layer is set to form die bond layer；Die bond Welding difficulty is reduced, the thermal stress at die bond interface by thermal stress quick release, can be alleviated；Improve the heat-sinking capability of the high power LED device so that die bond bed boundary has good reliability.
Description
Technical field
The invention belongs to LED die bond technical fields, are to be related to a kind of high power LED device and LED chip more specifically
Die-bonding method.
Background technology
LED is the abbreviation of light emitting diode.(power is generally great power LED core to great power LED in more than 1w chip
Piece) device have efficiently, energy-saving and environmental protection, it is safe the advantages of.But great power LED cooling ability, cause the junction temperature of LED chip
Height, and cause LED component the problems such as color temperature shift, luminous efficiency decline, service life shortening occur.Therefore, by LED chip
It is fixed on the heat dissipation problem that LED chip is must take into consideration when on substrate.The heat-sinking capability of high power LED device die bond layer with it is reliable
Property, it is the key factor for determining LED component reliability.
The chip package of high power LED device is that heat gives out caused by LED chip in the die bond layer formed on substrate
The crucial heat dissipation channel gone.It can not meet high power LED device using the die bond such as heat-conducting glue, silver paste technology in conventional art
Cooling requirements.To improve the heat dissipation problem of LED chip, currently conventional scheme has two kinds：A kind of scheme is consolidated using solder
Although crystal technique, this technology reduce die bond difficulty, but interface (interface between being welded on chip on solder and substrate)
Thermal stress is big, and the hole ratio at interface is high, the growth of interface compound is difficult to control, under arms during interface degradation it is fast, cause
The reliability at interface is low.Another scheme is to use eutectic welding technology, and this technical costs is high and technical process is difficult to control；Separately
Outside, because the thermal coefficient of expansion of chip and substrate is inconsistent so that interfacial thermal stress is big, and especially interface compound takes in device
It is difficult to control during labour, is easily caused interface poor reliability, reduces the service life of high power LED device.
The content of the invention
It is an object of the invention to provide a kind of high power LED device and LED chip die-bonding method, to solve prior art
Present in chip and the thermal stress in substrate crystal boundary face it is big, the problem of the poor reliability of interface.
To achieve the above object, the technical solution adopted by the present invention is：A kind of high power LED device is provided, including for
Luminous chip and the substrate of the support chip, the back side of the chip are staggeredly provided with some first solder bumps and thermal conductivity
Some first metal bumps of first solder bump can be better than, correspond to each first solder bump on the substrate
Position is provided with the second solder bump, and the position that each first metal bump is corresponded on substrate is provided with heat conductivility better than described
Second metal bump of the second solder bump, each first solder bump are weldingly connected with corresponding second solder bump,
Each first metal bump is connected with the corresponding second metal bump pressing.
Further, some first solder bumps and some first metal bump interphase distributions.
Further, some first metal bumps and some first solder bumps are in lattice-like, alternate setting
Block or alternate setting strip.
Further, the height of first solder bump is less than the height of first metal bump or/and described the
The height of two solder bumps is less than the height of second metal bump.
Further, in addition to respectively each first solder bump and corresponding second solder bump are weldingly connected
Some solder sheets.
Further, the bottom of each first solder bump or/and each second solder bump is provided with adhesion layer.
Further, the back side of the chip is provided with some the first locating slots for being used to position each first metal bump
Or/and the substrate is provided with some the second locating slots for being used to position each second metal bump.
Further, the back side of the chip is provided with some the first stopper slots for being used to position each first solder bump
Or/and the substrate is provided with some the second stopper slots for being used to position each second solder bump.
Another object of the present invention is to provide a kind of LED chip die-bonding method, comprise the following steps：
Chip processing：Some first solder bumps and heat conductivility that are staggered are made better than described the in chip back
Some first metal bumps of one solder bump；
Processing substrate：Position corresponding to each first metal bump on substrate is provided with heat conductivility better than described the
Second metal bump of two solder bumps；
Die bond connects：The back side of the chip is fitted on the substrate, by each first solder bump and accordingly
Second solder bump is weldingly connected, and makes each first metal bump and the corresponding second metal bump pressing phase
Even.
Further, step is also included before the chip handling steps：Each institute is correspondingly arranged in the chip back
The position for stating the first metal bump etches the first locating slot；The first metal bump insertion is accordingly in first locating slot.
The beneficial effect of high power LED device provided by the invention and LED chip die-bonding method is：With prior art phase
Than the present invention forms weld layer, while reduce die bond by the way that the first solder bump and corresponding second solder bump are weldingly connected
Welding difficulty；And the first metal bump is connected with the pressing of corresponding second metal bump, form thin metal layer；And then make weldering
Connect layer and thin metal layer forms die bond layer；Die bond layer has been designed to the structure that solder and metal be spaced apart by the structure, not only
Die bond Welding difficulty is reduced, and causes weld layer and thin metal layer to turn into the less connection knot of cross-sectional area one by one
Structure, when die bond layer produces thermal stress because the expansion of chip and substrate is inconsistent, thermal stress quick release can be alleviated die bond
The thermal stress at interface；Again because the heat conductivility of thin metal layer is better than weld layer, there is good heat conductivity, can be to chip
Caused heat carries out quick heat radiating, improves the heat-sinking capability of the high power LED device so that die bond bed boundary has good
Reliability.
Brief description of the drawings
Technical scheme in order to illustrate the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
In the required accompanying drawing used be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Accompanying drawing obtains other accompanying drawings.
Fig. 1 is the flow chart of LED chip die-bonding method provided in an embodiment of the present invention.
Fig. 2 is the die bond process schematic for the high power LED device that the embodiment of the present invention one provides, wherein：Scheming (a) is
Cross-sectional view after the processing of LED chip, figure (b) are the cross-sectional view after the processing of substrate, and figure (c) is solid
The cross-sectional view for the high power LED device that crystalline substance obtains；
Fig. 3 is the decomposition texture schematic diagram of high power LED device in Fig. 1, wherein：After scheming the processing that (a) is LED chip
Structural representation, figure (b) are the structural representation after the processing of substrate.
Fig. 4 is the die bond process schematic for the high power LED device that the embodiment of the present invention two provides, wherein：Scheming (a) is
Cross-sectional view after the processing of LED chip, figure (b) are the cross-sectional view after the processing of substrate, and figure (c) is solid
The cross-sectional view for the high power LED device that crystalline substance obtains；
Fig. 5 is the die bond process schematic for the high power LED device that the embodiment of the present invention three provides, wherein：Scheming (a) is
Cross-sectional view during the first metal bump is produced in LED chip, figure (b) is to produce the first welding in LED chip
Cross-sectional view during layer, figure (c) are cross-sectional view when the second metal bump is produced on substrate, are schemed (d)
To produce cross-sectional view during the second weld layer on substrate, figure (e) is cuing open for the high power LED device that die bond obtains
Face structural representation；
Fig. 6 is the die bond process schematic for the high power LED device that the embodiment of the present invention four provides, wherein：Scheming (a) is
Cross-sectional view when the first locating slot and the first stopper slot is produced in LED chip, figure (b) is to be made in LED chip
Go out cross-sectional view when the first metal bump and the first weld layer, figure (c) be produced on substrate the second locating slot and
Cross-sectional view during the second stopper slot, figure (d) are when the second metal bump and the second weld layer are produced on substrate
Cross-sectional view, figure (e) are the cross-sectional view for the high power LED device that die bond obtains；
Fig. 7 is the die bond process schematic for the high power LED device that the embodiment of the present invention five provides, wherein：Scheming (a) is
Cross-sectional view after the processing of LED chip, figure (b) are the cross-sectional view after the processing of substrate, and figure (c) is solid
The cross-sectional view for the high power LED device that crystalline substance obtains.
Wherein, each accompanying drawing main mark in figure：
10- chips；The locating slots of 11- first；The stopper slots of 12- first；20- substrates；The locating slots of 21- second；22- second is spacing
Groove；30- thin metal layers；The metal bumps of 31- first；The metal bumps of 32- second；40- weld layers；The solder bumps of 41- first；42-
Second solder bump；43- solder sheets；44- adhesion layers.
Embodiment
In order that technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Drawings and Examples are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
To explain the present invention, it is not intended to limit the present invention.
It should be noted that when element is referred to as " being fixed on " or " being arranged at " another element, it can be directly another
On one element or it is connected on another element.When an element is known as " being connected to " another element, it can
To be directly to another element or be indirectly connected on another element.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the invention, " multiple " are meant that two or more,
Unless otherwise specifically defined.
In the description of the invention, it is to be understood that term " " center ", " length ", " width ", " thickness ", " on ",
" under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", the orientation or position of the instruction such as " outer "
Relation is based on orientation shown in the drawings or position relationship, is for only for ease of the description present invention and simplifies description, without referring to
Show or imply that the device of meaning or element there must be specific orientation, with specific azimuth configuration and operation, therefore can not manage
Solve as limitation of the present invention.
In the description of the invention, it is necessary to illustrate, unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or electrical connection；Can be joined directly together, can also be indirectly connected by intermediary, Ke Yishi
The connection of two element internals or the interaction relationship of two elements.For the ordinary skill in the art, can be with
The concrete meaning of above-mentioned term in the present invention is understood as the case may be.
Embodiment one：
Fig. 2 and Fig. 3 are referred to, now high power LED device provided by the invention is illustrated.The great power LED device
Part, including chip 10 and substrate 20, chip 10 are used to light, and substrate 20 is used to support chip 10, and chip 10 is arranged on into substrate
On 20, high power LED device is formed with encapsulation.The back side of chip 10 is provided with some first solder bumps 41 and some first metals
Projection 31, some first solder bumps 41 and some first metal bumps 31 are staggeredly provided with, and some first metal bumps 31
Material heat conductivility be better than the first solder bump 41 material so that the heat conductivility of the first metal bump 31 be better than first
Solder bump 41.Substrate 20 is provided with some second solder bumps 42 and some second metal bumps 32, and some second solders are convex
Rise 42 and some second metal bumps 32 be staggeredly provided with, and the heat conductivility of the material of some second metal bumps 32 is better than the
The material of two solder bumps 42, so that the heat conductivility of the second metal bump 32 is better than the second solder bump 42.And the second gold medal
The position of category projection 32 is corresponding with the position of the first metal bump 31, position and the first solder bump of the second solder bump 42
41 position is corresponding, so as to which each first solder bump 41 when chip 10 is installed on the base plate 20, can be made corresponding one
Second solder bump 42, corresponding second metal bump 32 of each first metal bump 31, each first solder bump 41 with it is corresponding
Second solder bump 42 is weldingly connected, and each first metal bump 31 is connected with the pressing of corresponding second metal bump 32.So as to each the
One solder bump 41 forms weld layer 40, each first metal bump 31 and corresponding second gold medal with the welding of corresponding second solder bump 42
Category projection 32 is connected to form thin metal layer 30, and weld layer 40 and thin metal layer 30 form the die bond that chip 10 is connected with substrate 20
Layer.
Because chip 10 and substrate 20 have the different coefficients of expansion, when the temperature varies, chip 10 and substrate 20
Degrees of expansion it is different, if die bond layer is an entirety being filled between chip 10 and substrate 20, chip 10 can be caused
Die bond layer between substrate 20 produces thermal stress.And die bond layer is made up of weld layer 40 and thin metal layer 30 in the present invention, i.e.,
Weld layer 40 in die bond layer is divided into the solder joint or welding block of area very little, caused stress is readily available release.Separately
Outside, making has thin metal layer 30, and the heat conductivility of the thin metal layer 30 is better than weld layer 40, therefore can be to hot caused by chip 10
Amount carries out quick heat radiating, effectively reduces die bond Welding difficulty, alleviates the thermal stress at die bond interface, improves the great power LED device
The heat-sinking capability of part.
High power LED device provided by the invention, compared with prior art, the present invention by by the first solder bump 41 with
Corresponding second solder bump 42 is weldingly connected, and forms weld layer 40, while reduce die bond Welding difficulty；And cause the first metal
Projection 31 is connected with the pressing of corresponding second metal bump 32, forms thin metal layer 30；And then make weld layer 40 and thin metal layer 30
Form die bond layer；Die bond layer has been designed to the structure that solder and metal be spaced apart by the structure, not only reduces die bond welder
Skill difficulty, and cause weld layer 40 and thin metal layer 30 to turn into the less attachment structure of cross-sectional area one by one, work as die bond
When layer produces thermal stress because the expansion of chip 10 and substrate 20 is inconsistent, thermal stress quick release can be alleviated die bond interface
Thermal stress；Again because the heat conductivility of thin metal layer 30 is better than weld layer 40, there is good heat conductivity, can be to chip
Heat caused by 10 carries out quick heat radiating, improves the heat-sinking capability of the high power LED device so that die bond bed boundary has good
Good reliability.
Further, Fig. 2 and Fig. 3 are referred to, a kind of specific embodiment party as high power LED device provided by the invention
Formula, some first solder bumps 41 and some interphase distributions of first metal bump 31.By the first solder bump 41 and the first metal
Raised 31 interphase distributions, and the position due to the second solder bump 42 is corresponding with the position of the first solder bump 41, the second gold medal
Category projection 32 is corresponding with the position of the first metal bump 31, then the second solder bump 42 and 32 alternate row of the second metal bump
Cloth, then after chip 10 is installed on the base plate 20, weld layer 40 and the interphase distribution of thin metal layer 30 of formation, you can to improve
Bonding strength, thermal stress can be discharged so that die bond bed boundary reliability is higher with quick heat radiating again.
Further, Fig. 2 and Fig. 3 are referred to, a kind of specific embodiment party as high power LED device provided by the invention
Formula, some first metal bumps 31 and some first solder bumps 41 are in the bulk of alternate setting, then corresponding some second gold medals
Category projection 32 and some second solder bumps 42 are also in the bulk of alternate setting.To facilitate layout, while convenient connection.
In some other embodiment, some first metal bumps 31 and some first solder bumps 41 can be in the dot matrix of alternate setting
Shape, corresponding some second metal bumps 32 and some second solder bumps 42 are also in the lattice-like of alternate setting, with but it is more preferable
Release thermal stress.In further embodiments, some first metal bumps 31 and some first solder bumps 41 can be in
The strip of alternate setting, corresponding some second metal bumps 32 and some second solder bumps 42 are also in the bar of alternate setting
Shape, to facilitate processing and fabricating.
Due to the first solder bump 41 is melted and welded together with the second solder bump 42 in embodiment, welding is formed
Layer 40；It is bonded and presses together so that first metal bump 31 is corresponding with second metal bump 32, forms metal
Thin layer 30, the thin metal layer 30 between chip 10 and substrate 20 is realized that metal-metal connects, while thin metal layer 30 can be made real
The electric connection between chip 10 and substrate 20 is showed.Thin metal layer 30 forms die bond layer with weld layer 40, then by die bond layer system
It is made the structure that solder and metal are spaced apart so that solder and metal all turn into the less connection knot of cross-sectional area one by one
Structure, when die bond layer produces thermal stress because the expansion of chip 10 and substrate 20 is inconsistent, thermal stress quick release can be fallen, delay
Solve the thermal stress at die bond interface；In addition, the heat conductivility of thin metal layer 30 is better than solder, there is good heat conductivity, can be right
Heat caused by chip 10 carries out quick heat radiating, improves heat-sinking capability so that die bond bed boundary has good reliability.Separately
Outside, because the fusing point for the metal for being generally used for metal-metal bonding is very high, therefore the technology difficulty of metal and metal bonding is realized
Height, in the present embodiment, using caused chip 10 and substrate 20 after the first solder bump 41 and the welding of the second solder bump 42 it
Between adhesion, press together the first metal bump 31 and the second metal bump 32.Meanwhile can be by adjusting weld layer
40 and the height and area of thin metal layer 30, you can between the first metal bump 31 of adjustment and the second metal bump 32, i.e. metal
Pressure force between metal, so as to which the bonding of the self-coordinating between metal and metal can be realized.
Fig. 1 to Fig. 3 is referred to, the LED chip die-bonding method of the high power LED device of the present embodiment comprises the following steps：
Chip handles S1：Some first solder bumps 41 and heat conductivility being staggered are made at the back side of chip 10 to be better than
Some first metal bumps 31 of first solder bump 41；
Processing substrate S2：It is better than on the base plate 20 corresponding to the position of each first metal bump 31 provided with heat conductivility
Second metal bump 32 of second solder bump 42；
Die bond connects S3：The back side of the chip 10 is fitted on the substrate 20, by each first solder bump
41 are weldingly connected with corresponding second solder bump 42, and make each first metal bump 31 and corresponding second metal
The pressing of projection 32 is connected.
By the way that the first solder bump 41 and corresponding second solder bump 42 are weldingly connected, weld layer 40 is formed, is dropped simultaneously
Low die bond Welding difficulty；And the first metal bump 31 is connected with the pressing of corresponding second metal bump 32, form metal foil
Layer 30；And then weld layer 40 and thin metal layer 30 is set to form die bond layer；Die bond layer has been designed between solder and metal by the structure
Every the structure of distribution, die bond Welding difficulty is not only reduced, and cause weld layer 40 and thin metal layer 30 to turn into one
The individual less attachment structure of cross-sectional area, can when die bond layer produces thermal stress because the expansion of chip 10 and substrate 20 is inconsistent
By thermal stress quick release, to alleviate the thermal stress at die bond interface；Again because the heat conductivility of thin metal layer 30 is better than weld layer
40, there is good heat conductivity, quick heat radiating can be carried out to heat caused by chip 10, improve the great power LED device
The heat-sinking capability of part so that die bond bed boundary has good reliability.
Further, a kind of embodiment as high power LED device provided by the invention, the first metal bump
31 can be produced on the back side of chip 10 using film deposition techniques such as photolithographicallpatterned, plating mode, evaporation modes.
Further, a kind of embodiment as high power LED device provided by the invention, the first solder bump
41 can be produced on the back side of chip 10 using film deposition techniques such as photolithographicallpatterned, plating mode, evaporation modes.
Further, a kind of embodiment as high power LED device provided by the invention, the second metal bump
32 can use the film deposition techniques such as photolithographicallpatterned, plating mode, evaporation mode to make on the base plate 20.
Further, a kind of embodiment as high power LED device provided by the invention, the second solder bump
42 can use the film deposition techniques such as photolithographicallpatterned, plating mode, evaporation mode to make on the base plate 20.
Further, a kind of embodiment as high power LED device provided by the invention, can be in chip 10
The back side coating photoresist layer, and photoetching, development exposure after form predetermined figure；Again using plating or sputter-deposition technology
Form the first metal bump 31 and the first solder bump 41 with default convex surfaces product and predetermined altitude；Remove photoresist,
The first metal bump 31 to be distributed alternately and the first solder bump 41.
Further, a kind of embodiment as high power LED device provided by the invention, can be in substrate 20
Photoresist layer is applied, and predetermined figure is formed after photoetching, development exposure；Tool is formed using plating or sputter-deposition technology again
There are default convex surfaces product and the second metal bump 32 and the second solder bump 42 of predetermined altitude；Photoresist is removed, obtains phase
Between the second metal bump 32 for being distributed and the second solder bump 42.
Further, a kind of embodiment as high power LED device provided by the invention, the first metal bump
31 is identical with the material of the second metal bump 32.The metal materials such as gold, silver or copper can be used.First metal bump 31 and the second gold medal
The thin metal layer 30 that category projection 32 is formed can be Cu-Cu, Ag-Ag or Au-Au etc..
Further, a kind of embodiment as high power LED device provided by the invention, the first solder bump
41 to be connected with the solder joint of the second solder bump 42 can be traditional solder bump-metal connection, such as solder-Cu and
Solder-Au etc. or solder bump-solder bump connection, such as AuSn-AuSn, CuSn-CuSn, SnAgCu-SnAgCu
With SnBi-SnBi etc..
Embodiment two：
Referring to Fig. 4, the big work(of the structure for the high power LED device that the present embodiment provides and preparation method and embodiment one
The structure of rate LED component and being distinguished as preparation method：
In the present embodiment, the height of the second solder bump 42 is less than the height of the second metal bump 32.Such as by the second solder
The height of projection 42 sets the height for being slightly below the second metal bump 32, then by the second solder bump 42 and the first solder bump
41 when being weldingly connected, and can provide stronger pressure, the first metal bump 31 and the second metal bump 32 are more closely pressed
Close and be connected, preferably to extract the small―gap suture at interface.Certainly, in other embodiments, can also be by the first solder bump 41
Highly it is less than the height of the first metal bump 31, or simultaneously by the height of the first solder bump 41 less than the first metal bump 31
Height and the height of the second solder bump 42 are less than the height of the second metal bump 32.
Further, should referring to Fig. 4, a kind of embodiment as high power LED device provided by the invention
High power LED device also includes some welderings that each first solder bump 41 and corresponding second solder bump 42 are weldingly connected respectively
Tablet 43.Set solder sheet 43 that each first solder bump 41 and corresponding second solder bump 42 are weldingly connected, can be more convenient
Welding, while the thickness of weld layer 40 is conveniently adjusted, and then the thickness at interface can be conveniently adjusted, it is accurate to control weld layer 40 thick
Degree, so as to realize that the first metal bump 31 is bonded with the self-coordinating of the second metal bump 32.
In welding process, using reflux technique, solder, through cooled and solidified, the first solder bump 41 and the second solder are melted
Projection 42 realizes that solder joint connects, and now interface binding power is enough to make the first metal bump 31 and the second metal bump 32 fully press
Together, and the small―gap suture at interface is discharged.
After first solder bump 41 is connected with the solder joint of the second solder bump 42, weld layer 40 is formed, chip 10 is fixed in
On substrate 20；After first metal bump 31 and the second metal bump 32 are fitted and connected, thin metal layer 30 is formed, thin metal layer 30 is
Metal-metal connects, and has high-termal conductivity and conductive capability.
In certain embodiments, thus it is possible to vary the convex surfaces of the first solder bump 41 and the second solder bump 42 are accumulated pre-
If value, adjust bonding area, adjustment interface adhesion；The first metal bump 31, the second metal bump 32, first can also be changed
The preset value of the height of the solder bump 42 of solder bump 41 and second, the thickness at interface is adjusted, it is accurate to control the thickness of weld layer 40,
So as to realize that self-coordinating is bonded.
The preparation method of the high power LED device of the present embodiment can use the high power LED device phase with embodiment one
Near preparation method.The preparation method of the high power LED device of the present embodiment and the making of the high power LED device of embodiment one
Method is distinguished as：The preparation method of the present embodiment is using solder sheet 43 that first solder bump 41 and corresponding second solder is convex
42 welding are played, it is accurate to control the thickness of weld layer 40 to facilitate the thickness of adjustment interface, so as to realize that self-coordinating is bonded.
The high power LED device of the other structures of the high power LED device of the present embodiment and preparation method and embodiment one
Other structures it is identical with preparation method, repeating no more.
Embodiment three：
Referring to Fig. 5, the big work(of the structure for the high power LED device that the present embodiment provides and preparation method and embodiment two
The structure of rate LED component and being distinguished as preparation method：
In the present embodiment, the back side of chip 10 makes the first solder bump 41 and the first metal bump 31 is divided into two technique steps
Suddenly, first it is produced on the back side of chip 10 and makes the first metal bump 31, then makes the first solder bump 41.The two certain steps
Order can exchange.
Similarly, the second solder bump 42 is made on substrate 20 and the second metal bump 32 is also divided into two processing steps, first
Making makes the second metal bump 32 on the base plate 20, then makes the second solder bump 42.The order of the two certain steps can
To exchange.
There is no sequencing between some embodiments, chip processing S1 and processing substrate S2, first can carry out at chip
S1 steps are managed, can also first carry out processing substrate S2 steps, or two steps are carried out simultaneously.
The high power LED device of the other structures of the high power LED device of the present embodiment and preparation method and embodiment two
Other structures it is identical with preparation method, repeating no more.
Example IV：
Referring to Fig. 6, the big work(of the structure for the high power LED device that the present embodiment provides and preparation method and embodiment two
The structure of rate LED component and being distinguished as preparation method：
In the present embodiment, the back side of chip 10 is provided with some the first locating slots for being used to position each first metal bump 31
11, so as to convenient the first metal bump of back side processing and fabricating 31 in chip 10, while it can increase by the first metal bump 31
Highly so that the thickness of the thin metal layer 30 after die bond is bigger, improving radiating effect.Similarly, it is further possible in substrate
20 are provided with some the second locating slots 21 for being used to position each second metal bump 32.
Further, the back side of chip 10 is provided with some the first stopper slots 12 for being used to position each first solder bump 41,
So as to convenient the first solder bump of back side processing and fabricating 41 in chip 10, while the height of the first solder bump 41 can be increased
Degree, increase the thickness of the weld layer 40 after die bond, be effectively prevented from the first solder bump 41 or the second solder bump 42 by solder
Solder joint failure caused by piece 43 consumes, so as to effectively lift the reliability that weld layer 40 connects.Chip 10 can be caused simultaneously
Heat transfer that is more firm, and being advantageous to thin metal layer 30 is combined with substrate 20.Similarly, it is further possible on the base plate 20
Provided with some the second stopper slots 22 for being used to position each second solder bump 42.
Also referring to Fig. 1, the preparation method of the high power LED device of the present embodiment can use big with embodiment one
Preparation method similar in power led device.The preparation method of the high power LED device of the present embodiment is high-power with embodiment one
The preparation method of LED component is distinguished as：
Also include step before the chip handles S1 steps：Each described first is correspondingly arranged at the back side of chip 10
The position of metal bump 31 etches the first locating slot 11；First metal bump 31 is embedded in corresponding first locating slot 11
In.So as to process the first locating slot 11 at the back side of chip 10.In some embodiments, TSV (Through Silicon can be used
Vias, the Chinese meaning are：Through silicon chip passage) technical method, in the first locating slot of back-etching 11 of chip 10 so that plating or
The thickness of the first metal bump 31 increase that person's sputtering sedimentation is formed.
Further, step is also included before the chip handles S1 steps：It is correspondingly arranged at the back side of chip 10
The position of each first solder bump 41 etches the first stopper slot 12；First solder bump 41 is embedded in corresponding described first
In stopper slot 12.So as to process the first stopper slot 12 at the back side of chip 10.In some embodiments, TSV technology method can be used,
In the first stopper slot of back-etching 12 of chip 10 so that the thickness of the first solder bump 41 of plating or sputtering sedimentation formation increases
Add.
Further, step is also included before the processing substrate S2 steps：It is correspondingly arranged on the substrate 20 each
The position of second metal bump 32 etches the second locating slot 21；It is fixed that second metal bump 32 is embedded in corresponding described second
In the groove 21 of position.So as to process the second locating slot 21 on the base plate 20.In some embodiments, TSV technology method can be used, in base
The second locating slot 21 is etched on plate 20 so that the thickness of the second metal bump 32 increase of plating or sputtering sedimentation formation.
Further, step is also included before the chip handles S1 steps：It is correspondingly arranged on the substrate 20 each
The position of second solder bump 42 etches the second stopper slot 22；Second solder bump 42 is embedded in corresponding second limit
In the groove 22 of position.So as to process the second stopper slot 22 on the base plate 20.In some embodiments, TSV technology method can be used, in base
The second stopper slot 22 is etched on plate 20 so that the thickness of the second solder bump 42 increase of plating or sputtering sedimentation formation.
The high power LED device of the other structures of the high power LED device of the present embodiment and preparation method and embodiment two
Other structures it is identical with preparation method, repeating no more.
Embodiment five：
Referring to Fig. 7, the big work(of the structure for the high power LED device that the present embodiment provides and preparation method and embodiment two
The structure of rate LED component and being distinguished as preparation method：
The bottom of each first solder bump 41 is provided with adhesion layer 44.First solder bump 41 is fixed on using adhesion layer 44
The back side of chip 10, to increase adhesion, and then increase die bond bed boundary adhesion.Similarly, can also be in each second solder bump
42 bottom is provided with adhesion layer 44.Second solder bump 42 is fixed on the base plate 20 using adhesion layer 44, to increase adhesion,
And then increase die bond bed boundary adhesion.
The high power LED device of the other structures of the high power LED device of the present embodiment and preparation method and embodiment two
Other structures it is identical with preparation method, repeating no more.
The high power LED device of the other structures of the high power LED device of the present embodiment and preparation method and embodiment two
Other structures it is identical with preparation method, repeating no more.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. high power LED device, including for luminous chip and the substrate of the support chip, it is characterised in that：The core
The back side of piece, which interlocks, is better than some first metals of first solder bump provided with some first solder bumps and heat conductivility
Projection, the position that each first solder bump is corresponded on the substrate are provided with the second solder bump, corresponded to respectively on substrate
The position of first metal bump is provided with the second metal bump that heat conductivility is better than second solder bump, and each described the
One solder bump is weldingly connected with corresponding second solder bump, each first metal bump and corresponding second metal
Projection pressing is connected.
2. high power LED device as claimed in claim 1, it is characterised in that：Some first solder bumps and some the
One metal bump interphase distribution.
3. high power LED device as claimed in claim 2, it is characterised in that：Some first metal bumps and some institutes
The first solder bump is stated in lattice-like, the strip of the block or alternate setting of alternate setting.
4. high power LED device as claimed in claim 1, it is characterised in that：The height of first solder bump is less than institute
State the height of the first metal bump or/and the height of second solder bump is less than the height of second metal bump.
5. high power LED device as claimed in claim 4, it is characterised in that：Also include respectively that each first solder is convex
Play some solder sheets being weldingly connected with corresponding second solder bump.
6. the high power LED device as described in claim any one of 1-5, it is characterised in that：Each first solder bump or/
Adhesion layer is provided with the bottom of each second solder bump.
7. the high power LED device as described in claim any one of 1-5, it is characterised in that：If the back side of the chip is provided with
The first locating slot for positioning each first metal bump or/and the substrate are done provided with some each described for positioning
Second locating slot of the second metal bump.
8. the high power LED device as described in claim any one of 1-5, it is characterised in that：If the back side of the chip is provided with
The first stopper slot for positioning each first solder bump or/and the substrate are done provided with some each described for positioning
Second stopper slot of the second solder bump.
A kind of 9. LED chip die-bonding method, it is characterised in that：Comprise the following steps：
Chip processing：Some first solder bumps and heat conductivility that are staggered are made better than the described first weldering in chip back
Expect raised some first metal bumps；
Processing substrate：Position corresponding to each first metal bump on substrate is provided with heat conductivility better than the described second weldering
Expect the second raised metal bump；
Die bond connects：The back side of the chip is fitted on the substrate, it is by each first solder bump and accordingly described
Second solder bump is weldingly connected, and each first metal bump is connected with the corresponding second metal bump pressing.
10. LED chip die-bonding method as claimed in claim 9, it is characterised in that：Also wrapped before the chip handling steps
Include step：The position that each first metal bump is correspondingly arranged in the chip back etches the first locating slot；Described first
In corresponding first locating slot of metal bump insertion.
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| CN201710910262.5A CN107591475B (en) | 2017-09-29 | 2017-09-29 | High power LED device and LED chip die-bonding method |
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| CN201710910262.5A CN107591475B (en) | 2017-09-29 | 2017-09-29 | High power LED device and LED chip die-bonding method |
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| CN112185988A (en) * | 2019-06-17 | 2021-01-05 | 成都辰显光电有限公司 | Display panel and preparation method thereof |
| CN113270389A (en) * | 2020-02-17 | 2021-08-17 | 铠侠股份有限公司 | Semiconductor device and method for manufacturing the same |
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| CN107591475B (en) | 2018-11-30 |
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