CN107591345A - Substrate liquid processing method and substrate liquid processing device - Google Patents
Substrate liquid processing method and substrate liquid processing device Download PDFInfo
- Publication number
- CN107591345A CN107591345A CN201710543742.2A CN201710543742A CN107591345A CN 107591345 A CN107591345 A CN 107591345A CN 201710543742 A CN201710543742 A CN 201710543742A CN 107591345 A CN107591345 A CN 107591345A
- Authority
- CN
- China
- Prior art keywords
- substrate
- treatment fluid
- wafer
- liquid film
- liquid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Abstract
The present invention provides a kind of substrate liquid processing method and substrate liquid processing device.The generation of the pettiness particulate such as washmarking can stably be suppressed.Substrate processing method using same comprises the following steps：The step for the treatment of fluid being supplied to the substrate of rotation (S12, S13)；Supply treatment fluid the step of after (S12, S13), come the liquid film of flushing liquor is formed on substrate the step of (S14) to the central part supply flushing liquor of the substrate of rotation.With formed flushing liquor liquid film the step of (S14) before, treatment fluid the discontinued substrate of liquid film peripheral part formed treatment fluid liquid film the step of (S13).
Description
Technical field
Treatment fluid and flushing liquor are supplied to substrate to carry out the technology of liquid processing the present invention relates to a kind of.
Background technology
In order to handle liquid such as the implementation decoction processing of the substrates such as semiconductor crystal wafer and flushing processing, general use makes to be kept
Substrate for flat-hand position rotates around vertical axis and nearby supplies DHF (Diluted to the central portion of the process face of substrate
HydroFluoric acid：Diluted hydrofluoric acid) etc. treatment fluid, DIW (DeIonized Water：Deionized water) etc. flushing liquor side
Method (referring for example to patent document 1).In the method, be fed into treatment fluid near the central portion of substrate, flushing liquor due to
Centrifugal force and spread, the treatment fluid that has spread, the process face of flushing liquor covering substrate, thus carry out at decoction processing and flushing
Reason.
In the case where carrying out above-mentioned decoction processing, for the purpose of the overall equably progress liquid processing to substrate, to set
The rotating speed of substrate when determining the flow for the treatment of fluid and supplying treatment fluid.
It is known when the circuit miniaturization formed on the surface of semiconductor crystal wafer etc., small particulate can turn into problem.Closely
Nian Lai, due to becoming able to determine small particulate, therefore it can be seen that conventional invisible particulate.Moreover, inventor
Particulate as it was found that is due to caused by washmarking, is easily produced in substrate outer edge.
Patent document 1：Japanese Unexamined Patent Publication 2009-59895 publications
The content of the invention
Problems to be solved by the invention
The present invention, which provides one kind, can stably suppress the production of the pettiness particulates (particle) such as washmarking (water mark)
Raw technology.
The solution used to solve the problem
The mode of the present invention is related to a kind of substrate liquid processing method, and the substrate liquid processing method includes following step
Suddenly：Treatment fluid is supplied to the central part of the substrate of rotation；And after the step of supplying treatment fluid, into the substrate of rotation
Center portion supply flushing liquor to be formed the liquid film of flushing liquor on substrate, wherein, the substrate liquid processing method, which has, is forming flushing
Before the step of liquid film of liquid, treatment fluid the discontinued substrate of liquid film peripheral part formed treatment fluid liquid film the step of.
The other manner of the present invention is related to a kind of substrate liquid processing device, and the substrate liquid processing device possesses：Substrate is protected
Portion is held, it keeps substrate and rotates the substrate；Treatment fluid supply unit, it is handled to the substrate supply kept by board holder
Liquid；Flushing liquor supply unit, it is supplied after treatment fluid is supplied by treatment fluid supply unit to the substrate kept by board holder
To be formed the liquid film of flushing liquor on substrate to flushing liquor；And control unit, its control base board maintaining part, treatment fluid supply unit and
Flushing liquor supply unit, wherein, control unit formed flushing liquor liquid film before treatment fluid the discontinued substrate of liquid film week
Edge forms the liquid film for the treatment of fluid.
The effect of invention
In accordance with the invention it is possible to stably suppress the generation of the pettiness particulates such as washmarking.
Brief description of the drawings
Fig. 1 is bowing for the summary for the base plate processing system for representing to possess the processing unit involved by embodiments of the present invention
View.
Fig. 2 is the longitudinal cross-sectional side view for the summary for representing processing unit.
Fig. 3 is the figure of the specific structure of exemplary process unit and control unit.
Fig. 4 is to represent liquid treatment fluid throughout the section of the example for partially forming liquid film of the process face of wafer
Figure.
Fig. 5 be the whole region that represents liquid treatment fluid throughout the process face of wafer formed liquid film example section
Figure.
Fig. 6 is the flow chart of substrate liquid processing method.
Fig. 7 be represent the first decoction processing step, the second decoction processing step and rinse processing step in wafer rotating speed,
The curve map of the relation of time and liquid supply flow rate.
Fig. 8 be represent the first decoction processing step, the second decoction processing step and rinse processing step in wafer rotating speed,
The curve map of the relation of time and liquid supply flow rate.
Description of reference numerals
18：Control unit；30：Substrate holding mechanism；40：Treatment fluid supply unit；W：Wafer.
Embodiment
Illustrate an embodiment of the invention with reference to the accompanying drawings.
First, the typical case of the base plate processing system to that can apply the present invention illustrates.
Fig. 1 is the figure for the Sketch for representing the base plate processing system involved by present embodiment.Hereinafter, in order that position
Relation is clear and definite, and mutually orthogonal X-axis, Y-axis and Z axis are provided, Z axis positive direction is set into vertical upwardly-directed.
As shown in figure 1, base plate processing system 1 possesses carrying-in/carrying-out station 2 and treating stations 3.Carrying-in/carrying-out station 2 and treating stations 3
It is disposed adjacently.
Carrying-in/carrying-out station 2 possesses bearing part mounting portion 11 and delivery section 12.Multiple hold is placed with bearing part mounting portion 11
Holder C, the plurality of bearing part C be used for multiple substrates, be in the present embodiment semiconductor crystal wafer (being below wafer W) with water
Level state is stored.
Delivery section 2 is disposed adjacently with bearing part mounting portion 11, has base board delivery device 13 in the inside of delivery section 12
With junction 14.Base board delivery device 13 has the wafer maintaining body for being used for keeping wafer W.In addition, base board delivery device 13
Can in the horizontal direction with move in vertical and pivoted about with vertical axis, it is existed using wafer maintaining body
Wafer W is conveyed between bearing part C and junction 14.
Treating stations 3 are disposed adjacently with delivery section 12.Treating stations 3 possess delivery section 15 and multiple processing units 16.It is multiple
Processing unit 16 in a manner of being arranged in the both sides of delivery section 15 to set.
Delivery section 15 internally possesses base board delivery device 17.Base board delivery device 17 possesses the crystalline substance for keeping wafer W
Circle maintaining body.In addition, base board delivery device 17 can in the horizontal direction with moved in vertical and using vertical axis in
The heart is rotated, and it conveys wafer W using wafer maintaining body between junction 14 and processing unit 16.
Processing unit 16 is used for conveying the predetermined processing of wafer W to come by base board delivery device 17.
In addition, base plate processing system 1 possesses control device 4.Control device 4 is, for example, computer, and it possesses control unit 18
With storage part 19.Preserved in storage part 19 for being controlled to the various processing performed in base plate processing system 1
Program.Control unit 18 is by reading and performing action of the program being stored in storage part 19 come control base board processing system 1.
In addition, the program can both be stored in program in computer-readable storage medium or from this
Storage medium is installed to the program in the storage part 19 of control device 4.As computer-readable storage medium, exist for example
Hard disk (HD), floppy disk (FD), CD (CD), photomagneto disk (MO) and storage card etc..
In the base plate processing system 1 formed as described, first, the base board delivery device 13 at carrying-in/carrying-out station 2 will
Wafer W is taken out from the bearing part C for being placed in bearing part mounting portion 11, and the wafer W after taking-up is placed in into junction 14.Utilize
The wafer W for being placed in junction 14 is taken out and moved into everywhere from junction 14 by the base board delivery device 17 for the treatment of stations 3
Manage in unit 16.
It is defeated using substrate after being handled using processing unit 16 the wafer W being moved in processing unit 16
Send device 17 to take out of wafer W from processing unit 16 and be placed in junction 14.Then, base board delivery device 13 is utilized
The wafer W being placed in after the completion of the processing of junction 14 is returned to the bearing part C of bearing part mounting portion 11.
Then, reference picture 2 illustrates the typical case of processing unit 16.
As shown in Fig. 2 processing unit 16 possesses chamber 20, substrate holding mechanism 30, treatment fluid supply unit 40 and returned
Receive cup 50.
Chamber 20 is used to store substrate holding mechanism 30, treatment fluid supply unit 40 and recovery cup 50.In chamber 20
Top is provided with FFU (Fan Filter Unit：Blower fan filtering unit) 21.FFU 21 is used to form sinking in chamber 20.
Substrate holding mechanism 30 possesses maintaining part 31, column sections 32 and drive division 33.Maintaining part 31 is horizontal by wafer W
Ground is kept.Column sections 32 are the components extended along vertical, and the supporting of its base end part driven part 33 is can rotate, column sections
32 flatly support maintaining part 31 in top ends.Drive division 33 is used to make column sections 32 rotate around vertical axis.The substrate is protected
Hold mechanism 30 and column sections 32 is rotated and make the maintaining part 31 that is supported by column sections 32 by using drive division 33 and rotate, thus,
Rotate the wafer W kept by maintaining part 31.
Treatment fluid supply unit 40 is used for wafer W supplying processing fluids.Treatment fluid supply unit 40 supplies with treatment fluid
It is connected to source 70.
Recovery cup 50 is configured in a manner of surrounding maintaining part 31, is dispersed with collecting because of the rotation of maintaining part 31 from wafer W
Treatment fluid.In the bottom of recovery cup 50 formed with leakage fluid dram 51, the processing that will be collected into from the leakage fluid dram 51 by recovery cup 50
Liquid is discharged to the outside of processing unit 16.In addition, in the bottom of recovery cup 50 formed with exhaust outlet 52, the exhaust outlet 52 is used for will
The gas supplied from FFU 21 is discharged to the outside of processing unit 16.
The processing unit 16 and control unit 18 for being explained above Sketch are formed involved by embodiments of the present invention
At least a portion of substrate liquid processing device.For example, above-mentioned maintaining part 31, column sections 32 and drive division 33 are handled as holding
Wafer W formed with oxide-film and the board holder performance function of rotating wafer W on face.In addition, above-mentioned processing stream
Body supply source 70 and treatment fluid supply unit 40 aoxidize as to the wafer W supplies kept by board holder as removal is used for
The DHF of the treatment fluid of film treatment fluid supply unit plays function.Similarly, treatment fluid supply source 70 and treatment fluid supply unit
40, which also serve as flushing liquor supply unit, plays function, and the flushing liquor supply unit is passing through to the wafer W kept by board holder
Liquid supply unit supply DHF DIWs of the supply as flushing liquor afterwards is managed, DIW liquid film is formed in wafer W process face.And
And control unit 18 controls these board holders, treatment fluid supply unit and flushing liquor supply unit.
Hereinafter, reference picture 3 illustrates to the detailed construction of these processing units 16 and control unit 18.
Fig. 3 is the figure of the concrete structure of exemplary process unit 16 and control unit 18.
Processing unit 16 possesses the recovery cup 50 being arranged in chamber 20 and the treatment fluid supply unit 40 shown in Fig. 2, right
The wafer W processing being moved in chamber 20.As shown in figure 1, it is arranged on multiple processing units of the both sides of delivery section 15
16 are configured to make respectively carrying-in/carrying-out mouth (not shown) towards the side of delivery section 15.In figure 3, newly come using X ' axles, Y ' axles, Z ' axles
Represent the direction in each processing unit 16.On the direction of these axles, the direction to be provided with carrying-in/carrying-out mouth is used as Y ' axle sides
To front side, pair X ' axle orthogonal with the Y ' axles and Z ' axles are provided, Z ' axle positive directions particularly are set into vertical upward
Direction.
As shown in figure 3, treatment fluid supply unit 40 possesses the nozzle head 41 with first jet 400, installed in top ends
Have the nozzle arm 42 of the nozzle head 41, bearing nozzles arm 42 base end part rotary driving part 43.Rotary driving part 43 can make
Nozzle arm 42 rotates in the horizontal direction using the base end part of nozzle arm 42 as rotary shaft.First jet 400 can correspond to nozzle
The rotation of arm 42 and be set in keeping out of the way for the side of the processing position of wafer W central portion upper side with keeping out of the way recovery cup 50
Moved between position.In the case where carrying out decoction processing, flushing processing to wafer W supplies DHF, DIW, first jet 400 is matched somebody with somebody
Put in processing position.On the other hand, handled without such decoction, in the case of flushing processing, first jet 400 configures
In retreating position.
Rotary driving part 43 can also lift nozzle arm 42, so as to make nozzle arm 42 and first jet 400 in lead
The height and position of upper side on vertical direction when rotating nozzle arm 42 and the lower side for supplying DHF, DIW to wafer W
Height and position between move.
Flushing liquor supply road 711 and DHF supplies road 713 are connected with first jet 400.Flushing liquor supplies the He of road 711
DHF supplies road 713 is connected with the DIW supply sources 701 and DHF supply sources 702 for forming above-mentioned treatment fluid supply source 70 respectively.
DIW supply sources 701 possess storage DIW reservoir, the pump for supplying DIW and flow control valve etc..Similarly, DHF is supplied
Source 702 possesses storage DHF reservoir, the pump for supplying DHF and flow control valve etc..Utilize the control from control unit 18
Signal is controlled to these DIW supply sources 701 and DHF supply sources 702.According to these control signals, from DIW supply sources 701
The supply pipe that road 711 and nozzle arm 42 are supplied via flushing liquor supplies DIW to first jet 400, in addition, from DHF supply sources 702
The supply pipe that road 713 and nozzle arm 42 are supplied via DHF supplies DHF to first jet 400.
Control unit 18 still sends control signal to drive division 33.Using the control signal from control unit 18 to drive division
33 are controlled, and drive division 33 adjusts the rotating speed that column sections 32 rotate around vertical axis according to the control signal, thus by solid
Rotating speed due to the wafer W that the maintaining part 31 of column sections 32 is kept also changes.
<Prevent the generation of pettiness particulate>
Continuously carry out supplying towards the wafer W of rotation central part at DHF decoction processing and supply DIW flushing
Reason.Generally, the quantity delivered of decoction or the rotating speed of substrate are set so as to equably handle the condition on wafer W surface.This case
Inventor has found：In such a situa-tion, DIW is switched to from DHF in the liquid for the hydrophobic process face for being supplied to wafer W
When, it should exposed by the wafer W of liquid overlay film peripheral part.And, it is thus understood which results in the pettiness particulate such as washmarking.
Inventor be conceived to the liquid of the hydrophobic process face for being supplied to wafer W from DHF switch to DIW when pair
Liquid spreadability in wafer W peripheral part, has newly obtained following opinion：By improving the liquid spreadability, can stably reduce
The pettiness particulate such as washmarking.Specifically, in the final stage (such as several seconds or so before decoction processing completion) of decoction processing, make
The quantity delivered increase of wafer W rotating speed, DHF, in the state of the whole region for the process face that wafer W is covered by DHF liquid film
Lower beginning DIW supply, the generation of the washmarking thus, it is possible to effectively suppress pettiness.That is, carried in the stage for carrying out decoction processing
The liquid spreadability of the high process face for wafer W, it is changed into punching from decoction processing in the state of liquid spreadability substantially increases
Processing is washed, thus significantly shortens or elimination is for the time that the liquid spreadability of process face is incomplete state, so as to non-
Often effectively suppress the generation of the washmarking of pettiness.
Based on above-mentioned investigation, the control unit 18 shown in Fig. 3 carries out following control to prevent the liquid using DHF and DIW
The generation of pettiness particulate in processing step.
That is, the control of control unit 18 forms the drive division 33 of board holder and forms the DHF supplies for the treatment of fluid supply unit
Source 702, DHF is supplied to form DHF liquid film throughout the whole region of process face to wafer W central part.In addition, control unit
18 control drive divisions 33 and DHF supply sources 702 so that in the DHF discontinued wafer W of liquid film before DIW liquid film is formed
Peripheral part formed DHF liquid film.Then, control unit 18 controls drive division 33 and forms the DIW supply sources of flushing liquor supply unit
701 to wafer W central part supply DIW, in the whole region throughout process face formed with DHF liquid film in the state of open
Begin to supply DIW to wafer W.
Fig. 4 is to represent liquid treatment fluid L only cutting throughout the wafer W process face Ws example for partially forming liquid film
Face figure.Fig. 5 be the whole region that represents liquid treatment fluid L throughout wafer W process face Ws formed liquid film example section
Figure.Liquid treatment fluid L shown in Fig. 4 and Fig. 5 typically represents above-mentioned DHF and DIW.
When the process face Ws of the wafer W from first jet 400 to being rotated centered on rotation axis Aw supplies liquid processing stream
During body L, liquid treatment fluid L rotates together with wafer W, by towards wafer W radial outside effect centrifugal force influenceed and
Spread towards wafer W peripheral part Wp.
For example, the rotating speed in wafer W is insufficient to big situation, the quantity delivered for wafer W liquid treatment fluid L is insufficient to
In the case of more, as shown in figure 4, by liquid treatment fluid L-shaped into liquid film can not be diffused into wafer W peripheral part Wp, liquid processing
Fluid L only forms liquid film in a part of scope centered on wafer W central portion.On the other hand, in wafer W rotating speed foot
Enough big situations, for wafer W liquid treatment fluid L quantity delivered it is enough in the case of, as shown in figure 5, by liquid processing stream
Body L-shaped into Liquid film diffusion to wafer W peripheral part Wp, so as to throughout wafer W process face Ws whole region form liquid
Treatment fluid L liquid film.
In addition, the remaining liquid treatment fluid L for being helpless to the formation of liquid film departs from from liquid film and turns into drop.Particularly exist
As shown in Figure 4 only in the state of wafer W liquid film of the process face Ws a part of scope formed with liquid treatment fluid L,
The liquid treatment fluid L departed from from liquid film drop is thrown out of from wafer W flowing to after wafer W peripheral part Wp sides.But and
The drop for being not limited to depart from from liquid film and flow to peripheral part Wp sides is all thrown out of from wafer W, sometimes a part of liquid treatment fluid L
Wafer W peripheral part Wp is remained in the form of drop.Especially, at the peripheral part Wp liquid for being present in wafer W with drop
In the case that reason fluid L is DIW, cause the generation of the pettiness particulate such as washmarking.Present embodiment substrate liquid processing device and
In substrate liquid processing method, in order to suppress the generation of such pettiness particulate, throughout wafer W process face Ws whole region
Formed DHF liquid film, afterwards, in the whole region throughout process face Ws formed with DHF liquid film in the state of start to crystalline substance
Circle W supplies DIW.
Hereinafter, the substrate liquid processing method in present embodiment is described in detail.At the substrate liquid of present embodiment
Reason method comprises the following steps：DHF is supplied to the wafer W of rotation central part；And after the step of supplying DHF, Xiang Xuan
The wafer W turned central part supply DIW to be formed DIW liquid film on wafer W.Also, the substrate liquid processing method has
Formed DIW liquid film the step of before, DHF the discontinued wafer W of liquid film peripheral part formed DHF liquid film the step of.
Fig. 6 is the flow chart of substrate liquid processing method.In the substrate liquid processing method of present embodiment, base is carried out successively
Plate preparation process S11, the first decoction processing step S12, the second decoction processing step S13 and flushing processing step S14.
The step of substrate preparation process S11 is the wafer W formed with oxide-film in preparation process face.Using shown in Fig. 1
Base board delivery device 17 in the delivery section 15 in process face the wafer W formed with oxide-films such as natural oxides carry out it is defeated
Send, wafer W is moved in the processing unit 16 for carrying out handling using DHF and DIW liquid via carrying-in/carrying-out mouth, utilizes guarantor
Hold portion 31 and keep wafer W.In addition, after wafer W is handed off into retaining pin 311, base board delivery device 17 is from processing unit 16
Exit.
First decoction processing step S12 and the second decoction processing step S13 is respectively by for going the DHF of oxide film dissolving to supply
The step of being given to the wafer W of rotation.In the first decoction processing step S12, only throughout wafer W process face Ws a part
(particularly central part) form DHF liquid film (reference picture 4).On the other hand, in the second decoction processing step S13, throughout
Form to wafer W process face Ws whole region DHF liquid film (reference picture 5).
With the progress that the removal that oxide is removed using DHF is handled, wafer W process face Ws characteristic changes,
Therefore the state of the liquid film of the DHF on the process face Ws in the first decoction processing step S12 is it can also happen that change.Therefore, exist
In the case of making wafer W in first decoction processing step S12 with the rotation of the first rotating speed, energy when initially DHF is initially supplied
DHF liquid film is formed to enough process face Ws throughout wafer W whole region, when etching oxide-film by DHF, in process face
The upper DHF of Ws liquid film is also interrupted, and DHF liquid film is not re-formed in wafer W peripheral part.Therefore, in the present embodiment, exist
The DHF discontinued wafer W of liquid film peripheral part, DHF liquid film is formed in the second decoction processing step S13.Like this, exist
In present embodiment, the step of supplying DHF to the wafer W that is rotated with the first rotating speed, is including the whole of the process face Ws throughout wafer W
The step of forming DHF liquid film to individual region and only throughout wafer W process face Ws a part of region (particularly center
Portion) the step of forming DHF liquid film.
In addition, the condition of decoction processing is set so as to equably handle wafer W process face Ws, therefore also exist sometimes
DHF liquid film is not formed in first decoction processing step S12 on wafer W process face Ws.And, pass through in this case
Second decoction processing step S13 throughout wafer W process face Ws whole region form DHF liquid film, in DHF liquid film
The wafer W to have broken peripheral part forms DHF liquid film, thus, it is possible to obtain same action effect.In addition, at consideration decoction
During the uniformity of reason, wafer W rotating speed can not be improved sometimes.For example, when making wafer W rotating speed excessively increase, exist from crystalline substance
The DHF that temporarily throw away of circle W are rebounded by the recovery cup 50 of surrounding and are again attached to wafer W worry, wafer W by it is such again
The DHF pollutions of attachment.
Rinse processing step S14 be supply DHF the second above-mentioned decoction processing step S13 after carry out the step of,
Be to rotation wafer W supply DIW come on wafer W process face Ws formed DIW liquid film the step of.Rinse processing step
And then S14 carried out after above-mentioned the second decoction processing step S13, in the whole region of the process face Ws throughout wafer W
Start to supply DIW to wafer W in the state of liquid film formed with DHF.In addition, quantity delivered and crystalline substance of the adjustment for wafer W DIW
Circle W rotating speed so that even in start to wafer W supply DIW after also maintain throughout process face Ws whole region formed
There is the state of liquid film.Thus, after starting to supply DIW to wafer W, immediately using DHF and DIW mixed liquor in process face Ws
Upper formation liquid film, but be gradually increased from the ratio of process over time and the DIW in liquid film after the supply for starting DIW, finally
Only liquid film is formed using DIW.
Like this, advanced with before DIW is initially supplied DHF throughout wafer W process face Ws whole region formed
Liquid film, process face Ws whole region formed with DHF liquid film in the state of start DIW supply.Thereby, it is possible to avoid as
The liquid film of DHF as shown in Figure 4 is formed only in a wafer W process face Ws part and DHF liquid film is not present in wafer W
Peripheral part Wp state.As described above, the pettiness particulate such as washmarking caused by wafer W peripheral part Wp mainly due to
The drop that DHF liquid film is formed only in DIW in the state of a wafer W process face Ws part is present in liquid in the absence of DHF
Caused by the wafer W of film peripheral part Wp.Thus, by avoiding the liquid film of the DHF when being initially supplied DIW as described above only
The state of a wafer W process face Ws part is formed to make the peripheral part Wp in wafer W that DIW drop be not present, can
Prevent the generation of the pettiness particulate such as washmarking at wafer W peripheral part Wp.
Then, the rotating speed of the adjustment wafer W as modified embodiment of the present embodiment is come wafer W process face Ws it is whole
The method that individual region forms liquid film illustrates.
Fig. 7 represents the first decoction processing step S12, the second decoction processing step S13 and rinsed in processing step S14
The curve map of the relation of wafer rotating speed, time and liquid supply flow rate.In the figure 7, transverse axis represents time (second), the longitudinal axis in left side
Represent wafer W rotating speed (rpm：revolutions per minute：Revolutions per minute), the longitudinal axis on right side is represented for wafer
W DHF and DWI liquid supply flow rate (ml/min).Involved by solid line expression present embodiment shown in mark " R1 " " when
Between " and " wafer W rotating speed " relation.Mark " R2 " shown in dotted line represent comparative example involved by " time " and " wafer W's
The relation of rotating speed ".Mark the chain-dotted line shown in " F1 " to represent the relation of " time " and " DHF liquid quantity delivered ", mark " F2 "
Shown double dot dash line represents the relation of " time " and " DIW liquid quantity delivered ".
In addition, the line shown in mark " F1 " and " F2 " is common in present embodiment and comparative example, for wafer W's
DHF quantity delivered and DIW quantity delivered are identicals in present embodiment and comparative example.That is, involved by present embodiment
Substrate liquid processing method and comparative example involved by substrate liquid processing method in any one method in, for wafer W's
No matter when DHF quantity delivered (reference marker " F1 ") is fixed, in addition, the DIW of quantity delivered (reference to(for) wafer W
Mark " F2 ") also no matter when it is fixed, DHF quantity delivered is identical with DIW quantity delivered.
In the comparative example shown in mark " R2 ", in the first above-mentioned decoction processing step S12 and the second decoction processing step
In the two steps of rapid S13, wafer W is rotated with the first rotating speed N1, during DHF is supplied to wafer W, as shown in figure 4, DHF
Liquid film be formed only in wafer W process face Ws a part.Then, when the DHF of supply to(for) wafer W terminates and starts
During DIW supply, wafer W rotating speed gradually increases, and wafer W rotating speed increases to the second rotating speed N2 from the first rotating speed N1.
In the comparative example, during wafer W rotating speed increases to the second rotating speed N2 from the first rotating speed N1, to wafer W
DIW is supplied, on the other hand, is existed during the liquid film to be formed on wafer W process face Ws is not present in peripheral part Wp.Cause
This, the liquid film in during wafer W rotating speed increases to the second rotating speed N2 from the first rotating speed N1 is formed only in wafer W processing
During a face Ws part, the drop containing DIW departed from from liquid film is likely to be present in peripheral part Wp.As described above, it is brilliant
The pettiness particulate such as washmarking caused by circle W peripheral part Wp is due to that DIW drop is present in wafer W peripheral part Wp and caused
, therefore cause in the comparative example generation of pettiness particulate.
On the other hand, mark " R1 " shown in present embodiment in, supply DHF the step of have to the first rotating speed N1
The wafer W of rotation is supplied DHF the first decoction processing step S12 and rotated to the second rotating speed N2 faster than the first rotating speed N1
Wafer W supply DHF the second decoction processing step S13.In the first decoction processing step S12, it is fed into first turn
Process face Wss of the wafer W of the fast N1 rotation DHF in wafer W central part forms liquid film, the periphery of DHF liquid film in wafer W
Interrupt in portion.On the other hand, in the second decoction processing step S13, to what is rotated with the second rotating speed N2 faster than the first rotating speed N1
Wafer W supply DHF, thus supply DIW flushing processing step S14 before throughout wafer W process face Ws whole region
Ground forms DHF liquid film.More specifically, in the second decoction processing step S13, wafer W rotating speed is made from the first rotating speed N1
The second rotating speed N2 is proportionally increased to, afterwards, wafer W rotating speed is maintained the second rotating speed N2.Thus, throughout wafer W's
Form to process face Ws whole region DHF liquid film.Then, in processing step S14 is rinsed, wafer W rotating speed is maintained
For the second rotating speed N2, DIW is supplied to the wafer W rotated with the second rotating speed N2 faster than the first rotating speed N1.Thus, throughout processing
Face Ws whole region formed with the state of liquid film to wafer W carry out DIW supply.
Like this, come in advance in wafer W process face in the rotating speed for the last stage adjustment wafer W for rinsing processing step S14
Ws whole region forms DHF liquid film, and the rotating speed that wafer W is also adjusted in processing step S14 is rinsed causes throughout process face
Form liquid film to Ws whole region.Thus, the liquid film containing DIW is prevented to be formed only in a wafer W process face Ws part,
Thus, it is possible to during avoiding the drop containing DIW from being likely to be present in peripheral part Wp, so as to suppress the water at peripheral part Wp
The generation of the pettiness particulate such as trace.
In addition, in the example shown in above-mentioned Fig. 7, increase wafer W rotating speed in the second decoction processing step S13
To the second rotating speed N2, but as long as can throughout wafer W process face Ws whole region form DHF liquid film, second
The rotating speed of wafer W in decoction processing step S13 is not limited to the second rotating speed N2.But the second decoction processing step S13's
Terminal stage, increase to wafer W rotating speed and turn with wafer W required in processing step S14 is rinsed rotating speed identical
Speed, thus, it is possible to easily carry out from the second decoction processing step S13 to the transformation for rinsing processing step S14.
Then, the method for carrying out to be formed liquid film to adjustment liquid quantity delivered in wafer W process face Ws whole region is carried out
Explanation.
Fig. 8 represents the first decoction processing step S12, the second decoction processing step S13 and rinsed in processing step S14
The curve map of the relation of wafer rotating speed, time and liquid supply flow rate.In fig. 8, transverse axis represents time (second), the longitudinal axis in left side
Wafer W rotating speed (rpm) is represented, the longitudinal axis on right side represents the liquid supply flow rate (ml/min) of DHF and DIW for wafer W.
The solid line shown in " R1 " is marked to represent the relation of " time " and " wafer W rotating speed " involved by present embodiment.Mark " F1 "
Shown chain-dotted line represents the relation of " time " and " DHF liquid quantity delivered ", double dot dash line expression shown in mark " F2 " " when
Between " and " DIW liquid quantity delivered " relation.
In the example shown in Fig. 8, supply DHF the step of with to wafer W supply the first quantity delivered P1 DHF first
At decoction processing step S12 and DHF to the second quantity delivered P2 of the wafer W supplies more than the first quantity delivered P1 the second decoction
Manage step S13.In the first decoction processing step S12, wafer W DHF is fed at wafer W place with the first quantity delivered P1
Reason face Ws central part forms liquid film, and the liquid film for the treatment of fluid interrupts in wafer W peripheral part.On the other hand, at the second decoction
Manage in step S13, to the DHF of quantity delivered of the wafer W supplies more than the first quantity delivered P1, thus throughout wafer W process face Ws
Whole region form DHF liquid film.More specifically, in the second decoction processing step S13, make DHF quantity delivered from
First quantity delivered P1 proportionally increases to the second quantity delivered P2, afterwards, DHF quantity delivered is maintained into the second quantity delivered P2.
Thus, throughout wafer W process face Ws whole region form DHF liquid film.In addition, in the first decoction processing step S12
During the second decoction processing step S13, wafer W is rotated with the first rotating speed N1, wafer W rotating speed is maintained fixed.
Then, in processing step S14 is rinsed, wafer W rotating speed increases to the second rotating speed N2 from the first rotating speed N1, another
Aspect, DIW quantity delivered are initially supplied with the second quantity delivered P2, are reduced to the first quantity delivered P1 afterwards.Make wafer W like this
Rotating speed be reduced to the first supply from the second quantity delivered P2 from the quantity delivered that the first rotating speed N1 increases to the second rotating speed N2 and makes DIW
During measuring P1, state of the whole region ground formed with liquid film of process face Ws throughout wafer W is maintained.In addition, at flushing
Manage in step S14, after wafer W rotating speed reaches the second rotating speed N2, wafer W rotating speed is maintained the second rotating speed N2, separately
Outside, after DIW quantity delivered reaches the first quantity delivered P1, DIW quantity delivered is made to be maintained the first quantity delivered P1.Like this
Make wafer W rotating speed be maintained the second rotating speed N2 and make DIW quantity delivered be maintained the first quantity delivered P1 during, also maintain time
And state of the wafer W process face Ws whole region ground formed with liquid film.
Like this, come in advance throughout wafer W processing in the quantity delivered for the last stage adjustment DHF for rinsing processing step S14
DHF liquid film is formed to face Ws whole region, DIW quantity delivered and turning for wafer W are also adjusted in processing step S14 is rinsed
Speed cause throughout process face Ws whole region form liquid film.Thus, the liquid film containing DIW is prevented to be formed only in wafer W's
A process face Ws part, thus, it is possible to during avoiding the drop containing DIW from being likely to be present in peripheral part Wp, so as to press down
The generation of the pettiness particulates such as the washmarking at combinations circle W peripheral part Wp.
In addition, in the example shown in above-mentioned Fig. 8, supplied to wafer W DHF the first decoction processing step S12 and
During second decoction processing step S13, wafer W rotating speed is maintained fixed, but wafer W rotating speed is not fixed necessarily.
For example, the rotating speed in wafer W is the first rotating speed N1 and DHF quantity delivered is that the 3rd quantity delivered (wherein, meets " the first quantity delivered
P1<3rd quantity delivered<Second quantity delivered P2 " relation) when, sometimes not throughout wafer W process face Ws whole region landform
Into DHF liquid film.In addition, the rotating speed in wafer W (wherein, meets " the first rotating speed N1 for the 3rd rotating speed<3rd rotating speed<Second turn
Fast N2 " relation) and DHF quantity delivered when being the first quantity delivered P1, sometimes not throughout wafer W process face Ws whole region
Ground forms DHF liquid film.On the other hand, when wafer W rotating speed is that the 3rd rotating speed and DHF quantity delivered is three quantity delivered,
Sometimes can throughout wafer W process face Ws whole region form DHF liquid film.In this case, second can be suppressed
The degree of the increase of the quantity delivered of DHF in decoction processing step S13, so as to save DHF consumption.In addition,
In two decoction processing step S13, by wafer W adjustment of rotational speed to the rotating speed faster than the first rotating speed N1, thus in flushing afterwards
By wafer W adjustment of rotational speed to rotating speed of target can be the second rotating speed N2 with the shorter time in processing step S14.From smooth
Ground is carried out from the second decoction processing step S13 to from the viewpoint of rinsing processing step S14 transformation, is preferably made at the second decoction
The final goal rotating speed for managing the wafer W in step S13 is identical with the rotating speed of target for rinsing the wafer W in processing step S14.
In addition, in the example shown in above-mentioned Fig. 8, DHF supply sources 702 are controlled by the control unit 18 shown in Fig. 3, come
Increase the DHF of quantity delivered to(for) wafer W, but the auxiliary equipment that auxiliary supplies DHF to wafer W can also be also set up.That is, also may be used
Respectively to set DHF to supply assisted parts with the above-mentioned phase of DHF supply sources 702, the DHF supplies control of the assisted parts in control unit 18
DHF additionally is supplied to wafer W under system, thus quantity delivered of the increase for wafer W DHF.In addition, the DHF supplies assisted parts
Concrete structure be not particularly limited.For example, DHF supply assisted parts can both share the spray shown in Fig. 3 with DHF supply sources 702
The supply pipe of mouth arm 42, first jet 400, it is possible to have with the special confession of nozzle arm 42 and the phase of first jet 400 respectively
To pipe and nozzle.
It is as discussed above, handled according to the substrate liquid processing method and substrate liquid of present embodiment and variation
Device, the process face Ws throughout wafer W whole region formed with DHF liquid film in the state of start to wafer W supply
DIW.Thus, during preventing that the drop containing DIW is likely to be present in wafer W peripheral part Wp, so as to stably suppress
The generation of the pettiness particulate such as washmarking.
In addition, the present invention be not limited to above-mentioned embodiment and variation, those skilled in the art it is conceivable that application
The various modes of various modifications are also contained in the scope of the present invention, and the effect played by the present invention is also not limited to above-mentioned
Item.Thus, can be to claims and specification institute in the range of the technological thought of the present invention and purport is not departed from
Each key element recorded carries out various additions, change and part and deleted.
For example, in the above-described embodiment, the example that DHF is used as treatment fluid, DIW is used as to flushing liquor is illustrated,
But treatment fluid and flushing liquor are not particularly limited.The solution containing fluoric acid preferably can be used as treatment fluid.It will can aoxidize
The arbitrary liquid that the etching of film is removed etc. needed for the processing of desired decoction is used as treatment fluid, and can be rightly
The arbitrary liquid for the treatment of fluid as flushing is used as flushing liquor.
In addition, wafer W composition is also not particularly limited, typically wafer W is formed by the silicon of high-purity.Especially
It is that above-mentioned substrate liquid processing method and substrate liquid processing device can be preferably applied to eliminate oxide-film using treatment fluid
Process face Ws the contact angle wafer W bigger than the contact angle of the process face Ws formed with oxide-film.
Claims (11)
1. a kind of substrate liquid processing method, comprises the following steps：
Treatment fluid is supplied to the central part of the substrate of rotation；And
After the step of supplying the treatment fluid, come to the central part supply flushing liquor of the substrate of rotation in the substrate
The upper liquid film for forming the flushing liquor,
Wherein, the substrate liquid processing method has before the step of forming the liquid film of the flushing liquor, in the treatment fluid
The step of peripheral part of the discontinued substrate of liquid film forms the liquid film of the treatment fluid.
2. substrate liquid processing method according to claim 1, it is characterised in that
In the step of supplying the treatment fluid, the treatment fluid is supplied to the substrate rotated with the first rotating speed,
In the step of peripheral part forms the liquid film of the treatment fluid, revolved to second rotating speed faster than first rotating speed
The substrate turned supplies the treatment fluid, and the liquid of the treatment fluid is thus formed before the step of supplying the flushing liquor
Film.
3. substrate liquid processing method according to claim 2, it is characterised in that
It is fed into and liquid is formed with central part of the treatment fluid of the substrate of first rotating speed rotation in the substrate
Film, the liquid film of the treatment fluid interrupt in the peripheral part.
4. the substrate liquid processing method according to Claims 2 or 3, it is characterised in that
First rotating speed for can the whole region of the process face of the substrate formed the treatment fluid liquid film rotating speed.
5. the substrate liquid processing method according to any one of claim 2 to 4, it is characterised in that
In the step of supplying the flushing liquor, to the substrate rotated with second rotating speed faster than first rotating speed
Supply the flushing liquor.
6. substrate liquid processing method according to claim 1, it is characterised in that
The step of supplying the treatment fluid with to the substrate supply the first quantity delivered the treatment fluid the step of and to
The step for the treatment of fluid of quantity delivered of the substrate supply more than first quantity delivered,
By the treatment fluid of the quantity delivered to substrate supply more than first quantity delivered, throughout the base
Form to the whole region of plate the liquid film of the treatment fluid.
7. substrate liquid processing method according to claim 6, it is characterised in that
The treatment fluid that the substrate is fed into first quantity delivered forms liquid film, institute in the central part of the substrate
The liquid film for stating treatment fluid interrupts in the peripheral part of the substrate.
8. the substrate liquid processing method according to any one of claim 1 to 7, it is characterised in that
The step of supplying the treatment fluid forms the step of the liquid film of the treatment fluid with the whole region throughout the substrate
Suddenly,
In the step of supplying the flushing liquor, the liquid film for having stated treatment fluid is formed in the whole region throughout the substrate
In the state of start to supply the flushing liquor to the substrate.
9. the substrate liquid processing method according to any one of claim 1 to 8, it is characterised in that
The contact angle of the substrate of oxide-film has been removed using the treatment fluid than the base formed with the oxide-film
The contact angle of plate is big.
10. the substrate liquid processing method according to any one of claim 1 to 9, it is characterised in that
The treatment fluid contains fluoric acid,
The flushing liquor is pure water.
11. a kind of substrate liquid processing device, possesses：
Board holder, it keeps substrate and rotates the substrate；
Treatment fluid supply unit, it supplies treatment fluid to the substrate kept by the board holder；
Flushing liquor supply unit, it is protected after the treatment fluid has been supplied by the treatment fluid supply unit to by the substrate
The substrate for holding portion's holding supplies flushing liquor to form the liquid film of the flushing liquor on the substrate；And
Control unit, it controls board holder, the treatment fluid supply unit and the flushing liquor supply unit,
Wherein, the control unit is controlled such that before the liquid film of the flushing liquor is formed in the liquid film of the treatment fluid
The peripheral part of the substrate to have broken forms the liquid film of the treatment fluid.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016134313A JP6765878B2 (en) | 2016-07-06 | 2016-07-06 | Substrate liquid treatment method and substrate liquid treatment equipment |
| JP2016-134313 | 2016-07-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107591345A true CN107591345A (en) | 2018-01-16 |
| CN107591345B CN107591345B (en) | 2023-04-18 |
Family
ID=60949766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710543742.2A Active CN107591345B (en) | 2016-07-06 | 2017-07-05 | Substrate liquid processing method and substrate liquid processing apparatus |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6765878B2 (en) |
| KR (1) | KR102408472B1 (en) |
| CN (1) | CN107591345B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010010242A (en) * | 2008-06-25 | 2010-01-14 | Dainippon Screen Mfg Co Ltd | Substrate processing method and apparatus |
| CN101750898A (en) * | 2008-12-16 | 2010-06-23 | 东京毅力科创株式会社 | Substrate coating method and substrate coating apparatus |
| US20130220382A1 (en) * | 2012-02-24 | 2013-08-29 | Ebara Corporation | Substrate processing method |
| US20140261570A1 (en) * | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Substrate liquid processing method, substrate liquid processing apparatus, and storage medium |
| US20160093517A1 (en) * | 2014-09-25 | 2016-03-31 | Tokyo Electron Limited | Substrate liquid processing method, substrate liquid processing apparatus, and recording medium |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4901650B2 (en) | 2007-08-31 | 2012-03-21 | 東京エレクトロン株式会社 | Liquid processing apparatus, liquid processing method, and storage medium |
| JP6118758B2 (en) * | 2014-05-01 | 2017-04-19 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and computer-readable recording medium recording substrate processing program |
-
2016
- 2016-07-06 JP JP2016134313A patent/JP6765878B2/en active Active
-
2017
- 2017-07-03 KR KR1020170084066A patent/KR102408472B1/en active IP Right Grant
- 2017-07-05 CN CN201710543742.2A patent/CN107591345B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010010242A (en) * | 2008-06-25 | 2010-01-14 | Dainippon Screen Mfg Co Ltd | Substrate processing method and apparatus |
| CN101750898A (en) * | 2008-12-16 | 2010-06-23 | 东京毅力科创株式会社 | Substrate coating method and substrate coating apparatus |
| US20130220382A1 (en) * | 2012-02-24 | 2013-08-29 | Ebara Corporation | Substrate processing method |
| US20140261570A1 (en) * | 2013-03-15 | 2014-09-18 | Tokyo Electron Limited | Substrate liquid processing method, substrate liquid processing apparatus, and storage medium |
| US20160093517A1 (en) * | 2014-09-25 | 2016-03-31 | Tokyo Electron Limited | Substrate liquid processing method, substrate liquid processing apparatus, and recording medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018006647A (en) | 2018-01-11 |
| CN107591345B (en) | 2023-04-18 |
| JP6765878B2 (en) | 2020-10-07 |
| KR102408472B1 (en) | 2022-06-10 |
| KR20180005609A (en) | 2018-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6827814B2 (en) | Processing apparatus, processing system and processing method | |
| CN106796876B (en) | Substrate liquid processing method, substrate liquid processing apparatus, and computer-readable storage medium storing substrate liquid processing program | |
| TWI612558B (en) | Substrate processing apparatus and substrate processing method, and computer readable recording medium on which a substrate processing program is recorded | |
| CN107210216A (en) | Wet etch process, substrate liquid processing device and storage medium | |
| JP6341035B2 (en) | Substrate liquid processing method, substrate liquid processing apparatus, and storage medium | |
| TWI759526B (en) | Substrate processing apparatus, substrate processing method, and storage medium | |
| CN106796875A (en) | The computer-readable recording medium of substrate method for treating liquids, substrate liquid handling device and the substrate liquid handler that is stored with | |
| JP2019016654A (en) | Substrate processing apparatus, substrate processing method and storage medium | |
| KR20180054480A (en) | Application method | |
| CN108028195A (en) | Substrate processing method using same, substrate board treatment and storage medium | |
| TWI700127B (en) | Substrate processing device, substrate processing method and storage medium | |
| JP6400766B2 (en) | Liquid processing method, liquid processing apparatus, and storage medium | |
| CN107591345A (en) | Substrate liquid processing method and substrate liquid processing device | |
| JP2002064079A (en) | Etching apparatus | |
| WO2023136200A1 (en) | Method for treating substrate and device for treating substrate | |
| JP5905666B2 (en) | Substrate processing method and substrate processing apparatus | |
| TWI809258B (en) | Silicon wafer etching method and etching device | |
| JP7136543B2 (en) | Substrate processing method and substrate processing apparatus | |
| JP6411571B2 (en) | Substrate processing apparatus, substrate processing method, and computer-readable recording medium recording substrate processing program | |
| WO2020235438A1 (en) | Substrate processing method | |
| JP2006351805A (en) | Substrate processing method and device | |
| JP6117041B2 (en) | Liquid processing method, liquid processing apparatus, and storage medium | |
| JP2019046927A (en) | Substrate processing apparatus and substrate processing method | |
| TWI682452B (en) | Substrate processing apparatus and substrate processing method | |
| JP2008098663A (en) | Substrate processing method, and substrate processing apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |