CN107588699B - Coating thread plug gauge - Google Patents

Coating thread plug gauge Download PDF

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CN107588699B
CN107588699B CN201710774365.3A CN201710774365A CN107588699B CN 107588699 B CN107588699 B CN 107588699B CN 201710774365 A CN201710774365 A CN 201710774365A CN 107588699 B CN107588699 B CN 107588699B
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film layer
thin film
sputtering
target
thread
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CN107588699A (en
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李雪林
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Nanjing Duote Tools Co Ltd
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Nanjing Duote Tools Co Ltd
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Abstract

The invention discloses a coating thread plug gauge which is characterized by comprising a screw rod, wherein thread gauges are detachably arranged at two ends of the screw rod, a TiAlN thin film layer, a ZrCN thin film layer and a CrSiAlN thin film layer are sequentially arranged on the surface of the thread gauge from bottom to top, the ZrCN thin film layer is used as an intermediate layer, and the ZrCN thin film layer can be better wetted on the surfaces of the CrSiAlN thin film layer and the TiAlN thin film layer, so that the distance between polar groups on the CrSiAlN thin film layer and the TiAlN thin film layer is very small, and the polar groups generate adhesion balance due to van der Waals force or hydrogen bonds, so that the adhesion of the CrSiAlN thin film layer on the TiAlN thin film layer is improved, and the wear resistance of the surface of the.

Description

Coating thread plug gauge
Technical Field
the invention relates to a detection measuring tool, in particular to a coating thread plug gauge.
Background
A thread plug gauge is a correctness tool for measuring the dimensions of the internal thread. Generally, the types of thread plug gauges can be classified into three types, i.e., normal coarse threads, fine threads, and pipe threads. At present stage, the screw plug gauge is portable mostly, including the screw rod, can dismantle on the screw rod and be connected with the screw plug gauge of unidimensional not to the person of facilitating the use chooses for use the screw plug gauge of different grade type according to the demand of difference.
At present, the invention patent with the publication number of CN105674835A in the existing patent discloses a portable screw thread plug gauge, which comprises a screw rod and a first measuring part, wherein the first measuring part is set to be conical, the outer diameter of the upper end of the first measuring part is larger than that of the lower end of the first measuring part, a plurality of layers of external threads are arranged on the outer surface of the first measuring part, the thread pitches of the external threads at intervals are the same, the screw rod is fixedly connected above the first measuring part, the screw thread size of a measured object can be rapidly measured by the screw thread plug gauge, the detection process is rapid and convenient, and the measurement time.
However, in the process of measuring the screw plug gauge, adhesive wear and abrasive wear occur between the first measuring part and the internal thread to be measured, so that the service life of the first measuring part is shortened; from the surface modification perspective, improving the wear resistance and the antifriction performance of the first measuring part of the thread plug gauge is a main way to prolong the service life of the thread plug gauge.
Disclosure of Invention
the invention aims to provide a coating thread plug gauge, wherein a coating is plated on a first measuring part of the thread plug gauge, so that the wear resistance and the antifriction performance of the measuring part are obviously enhanced.
The technical purpose of the invention is realized by the following technical scheme:
The coating thread plug gauge comprises a screw, wherein thread gauges are detachably arranged at two ends of the screw, and a TiAlN thin film layer, a ZrCN thin film layer and a CrSiAlN thin film layer are sequentially arranged on the surface of each thread gauge from bottom to top.
By adopting the technical scheme, the TiAlN thin film layer is formed by alloying on the basis of TiN and is purple black. When the coating is used for processing stainless steel, titanium alloy, nickel alloy and high alloy steel, the service life of the coating is 3-4 times that of a TiN coating. Therefore, compared with a TiN film, the TiAlN film has the advantages that the hardness, the friction factor, the heat conductivity, the film-substrate binding force, the hot hardness, the high-temperature oxidation resistance and the like are greatly improved, and the service life of a coating is prolonged. When the Al concentration content in the TiAlN film is increased to a certain value, a compact Al layer is generated on the surface of the workpiece in the high-temperature processing process2O3A film is formed, so that a hard inert protective layer is formed, and the wear resistance of the coating is improved; the ZrCN thin film layer has the advantages of high strength, good wear resistance and the like, and the addition of the element C can form an amorphous carbon self-lubricating layer with a self-lubricating effect on the surface of the thread gauge, so that the friction coefficient of the coating is reduced; compared with Ti-based coating, the Cr-based coating has excellent oxidation performance, corrosion resistance, wear resistance and toughness, the Cr-Al-N coating system can contain more Al and keep stable cubic lattice structure, and Cr and Al elements in the CrAlN coating react with O in the air to form Al2O3And Cr2O3The oxide film plays roles of inhibiting oxidation, resisting abrasion and insulating heat; after Si element is introduced into the CrAlN coating, the preferred orientation is changed from (111) to (200), the microstructure is refined, and the structure of the CrAlSiN film layer becomes compact and has no columnar crystal; sequentially plating a TiAlN thin film layer, a ZrCN thin film layer and a CrSiAlN thin film layer on the surface of the thread gauge, wherein if the CrSiAlN thin film layer is directly plated on the TiAlN thin film layer, the adhesion force of the CrSiAlN thin film layer on the TiAlN thin film layer is smaller; the invention takes the ZrCN thin film layer as the intermediate layer, and can better wet the surface of the CrSiAlN thin film layer and the TiAlN thin film layer, so that CrS is enabledthe distance between the polar groups on the iAlN thin film layer and the TiAlN thin film layer is very small, adhesion balance is generated between the polar groups due to van der Waals force or hydrogen bond, and the adhesion of the CrSiAlN thin film layer on the TiAlN thin film layer is improved, so that the coating prepared on the surface of the thread gauge has excellent firmness, and the wear resistance, corrosion resistance and high-temperature oxidation resistance of the surface of the thread gauge are improved.
the invention is further set that the mass ratio of Ti to Al in the TiAlN thin film layer is 1: 1 ~ 3.
by adopting the technical scheme, the density of the metallic titanium is 4.51g/cm3the titanium and oxygen have great affinity, a compact oxide film with strong adhesive force and great inertia is generated on the surface of the titanium in the air or an oxygen ~ containing medium, the titanium can be quickly self ~ healed or regenerated again even if mechanical abrasion occurs, so that the titanium is a metal with light weight, high strength and good corrosion resistance, the strength is remarkably enhanced after the aluminum and other elements form alloy, the specific rigidity is far higher than that of stainless steel, the aluminum also has good corrosion resistance and better plasticity, meanwhile, the aluminum has good thermal conductivity and can be used as various heat dissipation materials, and the mass ratio of Ti to Al in the TiAlN film layer is limited to be 1: 1 ~ 3, so that the coating has good corrosion resistance and excellent strength.
The invention is further configured to: the preparation method of the TiAlN thin film layer comprises the following steps:
(1) Grinding the thread gauge by using abrasive paper, and then polishing by using grinding paste to remove rust and an oxide film on the surface of the sample;
(2) Then sequentially carrying out ultrasonic cleaning on the thread gauge in acetone and absolute ethyl alcohol for 10min respectively to remove oil stains on the surface and residual acetone;
(3) drying the thread gauge, putting the thread gauge into a cleaning chamber, and performing glow cleaning for 30 ~ 40 min;
(4) The cleaned threads are planned in a sputtering chamber, a high-purity Ti target and an Al target are adopted, the Ti target is connected with a direct current power supply, the Al target is connected with a radio frequency power supply, and Ar and reaction gas N are introduced2simultaneously vacuumizing and adjusting the vacuum degree to 6 ~ 6.5 multiplied by 10- 4pa, the working pressure is 0.5 ~ 0.6Pa, and the temperature of the thread gauge is 350 ~ 380 ℃;
(5) after pre ~ sputtering for 5min, starting sputtering and coating, wherein the coating thickness is 0.0006 ~ 0.0007 mm;
(6) And after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge to room temperature.
the invention is further set that the sputtering current of the Ti target in the step (4) is 0.2 ~ 0.25A.
the invention is further set in that the power of the Al target in the step (4) is 40 ~ 120W.
the method is further provided that the flow rate of the nitrogen gas in the step (4) is 30 ~ 40sccm, and the flow rate of the argon gas is 10 ~ 20 sccm.
By adopting the technical scheme, firstly, polishing and burnishing the surface of the thread gauge by using grinding paste, then respectively cleaning the surface of a sample by using acetone and absolute ethyl alcohol, and drying after cleaning; the method is characterized in that a Ti target is bombarded by direct current, an Al target is bombarded by radio frequency current, Ti ions and Al ions generated by bombardment are deposited on the surface of the thread gauge to form a uniform and stable TiAlN thin film layer, and the introduction of nitrogen serving as an environmental gas and argon serving as a working gas is kept in the deposition process.
The invention is further configured to: the preparation method of the ZrCN thin film layer comprises the following steps:
(1) Placing the thread gauge plated with the TiAlN film layer in a sputtering chamber, adopting a high-purity Zr target and a high-purity C target, connecting the Zr target to a direct-current power supply, connecting the C target to a radio-frequency power supply, and introducing Ar gas and reaction gas N2Simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10-4Pa, the working pressure is 0.5 ~ 0.6Pa, and the temperature of the thread gauge is 330 ~ 350 ℃;
(2) after pre ~ sputtering for 1min, starting sputtering and coating, wherein the coating thickness is 0.0002 ~ 0.0003 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge to room temperature.
by adopting the technical scheme, magnetron sputtering is carried out on the TiAlN thin film layer, a ZrCN thin film layer is deposited on the TiAlN thin film layer by taking a high ~ purity Zr target and a high ~ purity C target as target sources, the surface temperature of the thread gauge is 330 ~ 350 ℃ in the deposition process, Zr element can be stably deposited, and the adhesion on the TiAlN thin film layer is firmer.
the invention is further configured to: the preparation method of the CrSiAlN thin film layer comprises the following steps:
(1) placing the thread gauge plated with the ZrCN thin film layer in a sputtering chamber, adopting high-purity Cr, Al and Si single targets for co-sputtering, connecting Cr and Si targets into a direct current power supply, connecting Al targets into a radio frequency power supply, and introducing Ar gas and reaction gas N2Simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10-4Pa, the working pressure is 0.5 ~ 0.6Pa, and the temperature of the thread gauge is 320 ~ 330 ℃;
(2) sputtering and coating until the thickness of the coating is 0.0002-0.0003 mm;
(3) and after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge.
By adopting the technical scheme, high-purity Cr, Al and Si single targets are adopted for co-sputtering, the Cr and Si targets are connected to a direct-current power supply, and the Al target is connected to a radio-frequency power supply, so that the CrSiAlN thin film layer with uniform and stable performance can be plated on the ZrCN thin film layer.
In conclusion, the invention has the following beneficial effects:
1. According to the invention, the surface of the thread gauge is plated in a magnetron sputtering mode, and the TiAlN thin film layer, the ZrCN thin film layer and the CrSiAlN thin film layer are sequentially plated from bottom to top, so that the prepared thread gauge has high strength, excellent wear resistance, corrosion resistance, high and low temperature resistance and oxidation resistance;
2. the ZrCN thin film layer is plated between the TiAlN thin film layer and the CrSiAlN thin film layer, the ZrCN thin film layer has the advantages of high strength, good wear resistance and the like, and the addition of the C element can form an amorphous carbon self-lubricating layer with a self-lubricating effect on the surface of the thread gauge, so that the self-leveling property between the TiAlN thin film layer and the CrSiAlN thin film layer is improved, and the adhesive force between the TiAlN thin film layer and the CrSiAlN thin film layer is enhanced;
3. when the TiAlN thin film layer is prepared, the surface temperature of a thread gauge is 350 ~ 380 ℃, while when the ZrCN thin film layer is prepared, the temperature of a sample is adjusted to be 330 ~ 350 ℃, and when the CrSiAlN thin film layer is prepared, the temperature of the sample is adjusted to be 320 ~ 330 ℃, so that the adhesion force on the surface of the thread gauge is improved.
Drawings
FIG. 1 is a schematic diagram of the construction of an embodiment thread plug gauge;
FIG. 2 is a cross-sectional view of an embodiment thread plug gauge.
in the figure: 1. a screw; 2. a thread gauge; 3. a TiAlN thin film layer; 4. a ZrCN thin film layer; 5. a CrSiAlN thin film layer.
Detailed Description
the present invention will be described in further detail with reference to the following drawings and examples.
the first embodiment is as follows:
a coating thread plug gauge is shown in figure 1 and comprises a cylindrical screw rod 1, thread gauges 2 are detachably arranged at two ends of the screw rod 1, and a TiAlN thin film layer 3, a ZrCN thin film layer 4 and a CrSiAlN thin film layer 5 are sequentially plated on the surface of each thread gauge 2 from bottom to top in a magnetron sputtering mode.
The preparation process of the TiAlN thin film layer 3 is as follows:
(1) Grinding the surface of the thread gauge 2 by using sand paper, and then polishing by using grinding paste to remove rust and an oxide film on the surface of the sample;
(2) then sequentially carrying out ultrasonic cleaning on the thread gauge 2 in acetone and absolute ethyl alcohol for 10min respectively to remove oil stains and residual acetone on the surface;
(3) drying the thread gauge 2, putting the thread gauge into a cleaning chamber, and performing glow cleaning for 30 min;
(4) The cleaned thread gauge 2 is sent into a sputtering chamber, a Ti target and an Al target with the purity of 99.999 percent are adopted, and the size specification of the target is phi 50.8 multiplied by 3mm3connecting Ti target to DC power supply with sputtering current of 0.2A, connecting Al target to RF power supply, regulating Al target power to 80W, and introducing working gas Ar and reaction gas N2Purity of 99.999%, N2The flow rate of Ar gas is 30sccm and 10sccm, and simultaneously the vacuum degree is adjusted to 6.0 × 10-4Pa, working pressure of 0.5Pa, workingthe temperature is 350 ℃;
(5) after pre-sputtering for 5min, starting sputtering and coating, wherein the coating thickness is 0.0006 mm;
(6) After sputtering is stopped, the parameters are adjusted to the initial values, the equipment is closed, and the thread gauge 2 is cooled to the room temperature.
The preparation process of the ZrCN thin film layer 4 is as follows:
(1) Placing the thread gauge 2 plated with the TiAlN film layer 3 in a sputtering chamber, replacing a target material, adopting a high-purity Zr target and a high-purity C target, connecting the Zr target to a direct current power supply, sputtering current of 0.2A, connecting the C target to a radio frequency power supply, and introducing working gas Ar and reaction gas N, wherein the power of the radio frequency power supply is 60W2simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10-4pa, working pressure of 0.5Pa and working temperature of 330 ℃;
(2) after pre-sputtering for 1min, starting sputtering and coating, wherein the coating thickness is 0.0001 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge to room temperature.
The preparation process of the CrSiAlN thin film layer 5 is as follows:
(1) placing the thread gauge 2 plated with the ZrCN thin film layer 4 in a sputtering chamber, replacing a target material, adopting high-purity Cr, Al and Si single-target co-sputtering, connecting the Cr and Si targets into a direct current power supply, controlling the sputtering current of the Cr target to be 0.25A, controlling the sputtering current of the Si target to be 0.15A, connecting the Al target into a radio frequency power supply, controlling the power of the Al target to be 100W, and introducing Ar gas and reaction gas N2simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10-4pa, the working pressure is 0.5Pa, and the working temperature is 320 ℃;
(2) Sputtering and coating until the thickness of the coating is 0.0002 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge.
Example two:
a coated thread plug gauge differing from the first embodiment by:
The preparation process of the TiAlN thin film layer 3 is as follows:
(1) grinding the surface of the thread gauge 2 by using sand paper, and then polishing by using grinding paste to remove rust and an oxide film on the surface of the sample;
(2) Then sequentially carrying out ultrasonic cleaning on the thread gauge 2 in acetone and absolute ethyl alcohol for 10min respectively to remove oil stains and residual acetone on the surface;
(3) Drying the thread gauge 2, putting the thread gauge into a cleaning chamber, and performing glow cleaning for 35 min;
(4) The cleaned thread gauge 2 is sent into a sputtering chamber, a Ti target and an Al target with the purity of 99.999 percent are adopted, and the size specification of the target is phi 50.8 multiplied by 3mm3connecting Ti target to DC power supply with sputtering current of 0.22A, connecting Al target to RF power supply, regulating Al target power to 40W, and introducing working gas Ar and reaction gas N2purity of 99.999%, N2The flow rate of Ar gas is 35sccm and 10sccm, and simultaneously vacuum degree is adjusted to 6.0 × 10-4Pa, the working pressure is 0.55Pa, and the working temperature is 360 ℃;
(5) After pre-sputtering for 5min, starting sputtering and coating, wherein the coating thickness is 0.00065 mm;
(6) after sputtering is stopped, the parameters are adjusted to the initial values, the equipment is closed, and the thread gauge 2 is cooled to the room temperature.
The preparation process of the ZrCN thin film layer 4 is as follows:
(1) placing the thread gauge 2 plated with the TiAlN film layer 3 in a sputtering chamber, replacing a target material, adopting a high-purity Zr target and a high-purity C target, connecting the Zr target to a direct current power supply, sputtering current of 0.25A, connecting the C target to a radio frequency power supply, and introducing working gas Ar and reaction gas N, wherein the power of the radio frequency power supply is 60W2simultaneously vacuumizing and adjusting the vacuum degree to 6.5 multiplied by 10-4pa, working pressure of 0.55Pa and working temperature of 330 ℃;
(2) after pre-sputtering for 1min, starting sputtering and coating, wherein the coating thickness is 0.00015 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge to room temperature.
The preparation process of the CrSiAlN thin film layer 5 is as follows:
(1) the thread gauge 2 plated with the ZrCN thin film layer 4 is placed in a sputtering chamber, the target material is replaced by adopting high-purity Cr, Al,co-sputtering Si with single target, connecting Cr and Si targets to DC power supply, sputtering Cr target with current of 0.25A, sputtering Si target with current of 0.15A, connecting Al target to RF power supply, setting Al target power at 100W, and introducing Ar gas and N gas2Simultaneously vacuumizing and adjusting the vacuum degree to 7 multiplied by 10-4pa, the working pressure is 0.6Pa, and the working temperature is 325 ℃;
(2) Sputtering and coating until the thickness of the coating is 0.00015 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge.
Example three:
a coated thread plug gauge differing from the first embodiment by:
the preparation process of the TiAlN thin film layer 3 is as follows:
(1) grinding the surface of the thread gauge 2 by using sand paper, and then polishing by using grinding paste to remove rust and an oxide film on the surface of the sample;
(2) Then sequentially carrying out ultrasonic cleaning on the thread gauge 2 in acetone and absolute ethyl alcohol for 10min respectively to remove oil stains and residual acetone on the surface;
(3) Drying the thread gauge 2, putting the thread gauge into a cleaning chamber, and performing glow cleaning for 40 min;
(4) The cleaned thread gauge 2 is sent into a sputtering chamber, a Ti target and an Al target with the purity of 99.999 percent are adopted, and the size specification of the target is phi 50.8 multiplied by 3mm3connecting Ti target to DC power supply with sputtering current of 0.25A, connecting Al target to RF power supply, regulating Al target power to 60W, and introducing working gas Ar and reaction gas N2Purity of 99.999%, N2The flow rate of Ar gas is 15sccm and the vacuum degree is adjusted to 6.0X 10-4pa, the working pressure is 0.6Pa, and the working temperature is 370 ℃;
(5) After pre-sputtering for 5min, starting sputtering and coating, wherein the coating thickness is 0.0007 mm;
(6) After sputtering is stopped, the parameters are adjusted to the initial values, the equipment is closed, and the thread gauge 2 is cooled to the room temperature.
the preparation process of the ZrCN thin film layer 4 is as follows:
(1) placing the thread gauge 2 plated with the TiAlN film layer 3 in a sputtering chamber, replacing a target material, adopting a high-purity Zr target and a high-purity C target, connecting the Zr target to a direct current power supply, sputtering current of 0.27A, connecting the C target to a radio frequency power supply, and introducing working gas Ar and reaction gas N, wherein the power of the C target is 80W2simultaneously vacuumizing and adjusting the vacuum degree to 6.5 multiplied by 10-4pa, the working pressure is 0.6Pa, and the working temperature is 330 ℃;
(2) After pre-sputtering for 1min, starting sputtering and coating, wherein the coating thickness is 0.0001 mm;
(3) and after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge to room temperature.
The preparation process of the CrSiAlN thin film layer 5 is as follows:
(1) placing the thread gauge 2 plated with the ZrCN thin film layer 4 in a sputtering chamber, replacing a target material, adopting high-purity Cr, Al and Si single-target co-sputtering, connecting the Cr and Si targets into a direct current power supply, controlling the sputtering current of the Cr target to be 0.25A, controlling the sputtering current of the Si target to be 0.15A, connecting the Al target into a radio frequency power supply, controlling the power of the Al target to be 100W, and introducing Ar gas and reaction gas N2simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10-4pa, the working pressure is 0.6Pa, and the working temperature is 330 ℃;
(2) Sputtering and coating until the thickness of the coating is 0.0002 mm;
(3) and after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge.
example four:
A coated thread plug gauge differing from the first embodiment by:
The preparation process of the TiAlN thin film layer 3 is as follows:
(1) Grinding the surface of the thread gauge 2 by using sand paper, and then polishing by using grinding paste to remove rust and an oxide film on the surface of the sample;
(2) then sequentially carrying out ultrasonic cleaning on the thread gauge 2 in acetone and absolute ethyl alcohol for 10min respectively to remove oil stains and residual acetone on the surface;
(3) drying the thread gauge 2, putting the thread gauge into a cleaning chamber, and performing glow cleaning for 40 min;
(4) The cleaned thread gauge 2 is sent into a sputtering chamber, a Ti target and an Al target with the purity of 99.999 percent are adopted, and the size specification of the target is phi 50.8 multiplied by 3mm3connecting Ti target to DC power supply with sputtering current of 0.23A, connecting Al target to RF power supply, regulating Al target power to 120W, and introducing working gas Ar and reaction gas N2purity of 99.999%, N2the flow rate of Ar gas is 20sccm and the vacuum degree is adjusted to 6.0 × 10-4pa, the working pressure is 0.6Pa, and the working temperature is 370 ℃;
(5) After pre-sputtering for 5min, starting sputtering and coating, wherein the coating thickness is 0.0007 mm;
(6) after sputtering is stopped, the parameters are adjusted to the initial values, the equipment is closed, and the thread gauge 2 is cooled to the room temperature.
The preparation process of the ZrCN thin film layer 4 is as follows:
(1) Placing the thread gauge 2 plated with the TiAlN film layer 3 in a sputtering chamber, replacing a target material, adopting a high-purity Zr target and a high-purity C target, connecting the Zr target to a direct current power supply, sputtering current of 0.3A, connecting the C target to a radio frequency power supply, and introducing working gas Ar and reaction gas N, wherein the power of the C target is 100W2Simultaneously vacuumizing and adjusting the vacuum degree to 6.5 multiplied by 10-4pa, the working pressure is 0.6Pa, and the working temperature is 340 ℃;
(2) After pre-sputtering for 1min, starting sputtering and coating, wherein the coating thickness is 0.0002 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge to room temperature.
The preparation process of the CrSiAlN thin film layer 5 is as follows:
(1) placing the thread gauge 2 plated with the ZrCN thin film layer 4 in a sputtering chamber, replacing a target material, adopting high-purity Cr, Al and Si single-target co-sputtering, connecting the Cr and Si targets into a direct current power supply, controlling the sputtering current of the Cr target to be 0.25A, controlling the sputtering current of the Si target to be 0.15A, connecting the Al target into a radio frequency power supply, controlling the power of the Al target to be 100W, and introducing Ar gas and reaction gas N2Simultaneously vacuumizing and adjusting the vacuum degree to 6.5 multiplied by 10-4pa, the working pressure is 0.6Pa, and the working temperature is 320 ℃;
(2) Sputtering and coating until the thickness of the coating is 0.0001 mm;
(3) and after the sputtering is stopped, adjusting the parameters to the initial values, closing the equipment, and cooling the thread gauge.
comparative example one: in contrast to example one, the ZrCN thin film layer was absent.
Comparative example two: in contrast to example one, the ZrCN thin film layer and CrSiAlN thin film layer were absent.
Comparative example three: compared with the first embodiment, the TiAlN thin film layer and the ZrCN thin film layer are absent.
The detection means is as follows:
And (3) nano hardness detection: and (3) characterizing the hardness and the elastic modulus of the film by adopting a nano indentation test method. The maximum load of the G200 nano indenter produced by Agilent of America is 10mN, the load resolution is 1nN, the maximum indentation depth is 15nm, and the displacement resolution is 0.0002 nm.
the results of the hardness and elastic modulus measurements are shown in the following table
sample (I) hardness (GPa) Modulus of elasticity (GPa)
example one 18.56 286.7
Example two 13.87 228.3
EXAMPLE III 14.28 236.1
Example four 16.35 265.6
Comparative example 1 7.68 146.8
comparative example No. two 9.62 152.9
comparative example No. three 10.34 168.2
the table shows that the hardness of the coating plated by the embodiment can reach more than 13GPa, while the hardness is remarkably reduced due to the absence of the ZrCN thin film layer in the comparative example, which indicates that the bonding capability of the TiAlN thin film layer and the CrSiAlN thin film layer is not strong, and the adhesion of the CrSiAlN thin film layer on the TiAlN thin film layer is weak; accordingly, the elastic modulus and the hardness have the same tendency to change.
Compared with the second comparative example and the third comparative example, the hardness of the single TiAlN thin film layer and the single CrSiAlN thin film layer is about 10GPa, and the embodiment has higher hardness and excellent external force abrasion resistance.
The present embodiment is only for explaining the present invention, and it is not limited to the present invention, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present invention.

Claims (6)

1. A coating thread plug gauge comprises a screw, wherein thread gauges are detachably arranged at two ends of the screw, and the coating thread plug gauge is characterized in that a TiAlN thin film layer, a ZrCN thin film layer and a CrSiAlN thin film layer are sequentially arranged on the surface of the thread gauge from bottom to top, wherein the mass ratio of Ti to Al in the TiAlN thin film layer is 1: 1 ~ 3;
The preparation method of the ZrCN thin film layer comprises the following steps:
(1) placing the thread gauge plated with the TiAlN film layer in a sputtering chamber, adopting a high-purity Zr target and a high-purity C target, connecting the Zr target to a direct-current power supply, connecting the C target to a radio-frequency power supply, and introducing Ar gas and reaction gas N2simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10- 4Pa, the working pressure is 0.5 ~ 0.6Pa, and the working temperature is 330 ~ 350 ℃;
(2) after pre ~ sputtering for 1min, starting sputtering and coating, wherein the coating thickness is 0.0002 ~ 0.0003 mm;
(3) and after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge to room temperature.
2. A coated thread plug gauge according to claim 1, wherein said TiAlN film layer is prepared by the following method:
(1) grinding the thread gauge by using abrasive paper, and then polishing by using grinding paste to remove rust and an oxide film on the surface of the sample;
(2) Then sequentially carrying out ultrasonic cleaning on the thread gauge in acetone and absolute ethyl alcohol for 10min respectively to remove oil stains on the surface and residual acetone;
(3) drying the thread gauge, putting the thread gauge into a cleaning chamber, and performing glow cleaning for 30 ~ 40 min;
(4) The cleaned threads are planned in a sputtering chamber, a high-purity Ti target and an Al target are adopted, the Ti target is connected with a direct current power supply, the Al target is connected with a radio frequency power supply, and Ar and reaction gas N are introduced2simultaneously vacuumizing and adjusting the vacuum degree to 6 ~ 6.5 multiplied by 10-4Pa, the working pressure is 0.5 ~ 0.6Pa, and the working temperature is 350 ~ 380 ℃;
(5) after pre ~ sputtering for 5min, starting sputtering and coating, wherein the coating thickness is 0.0006 ~ 0.0007 mm;
(6) And after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge to room temperature.
3. the coated thread plug gauge according to claim 2, wherein the sputtering current of the Ti target in the step (4) is 0.2 ~ 0.25A.
4. the coated thread plug gauge according to claim 2, wherein the Al target power in step (4) is 40 ~ 120W.
5. the coated plug gauge according ~ claim 2, wherein the flow rate of nitrogen gas in step (4) is 30 ~ 40sccm and the flow rate of argon gas is 10 ~ 20 sccm.
6. The coated thread plug gauge according to claim 1, wherein the CrSiAlN thin film layer is prepared by the following method:
(1) Placing the thread gauge plated with the ZrCN thin film layer in a sputtering chamber, adopting high-purity Cr, Al and Si single targets for co-sputtering, connecting Cr and Si targets into a direct current power supply, connecting Al targets into a radio frequency power supply, and introducing Ar gas and reaction gas N2Simultaneously vacuumizing and adjusting the vacuum degree to 6 multiplied by 10-4Pa, the working pressure is 0.5 ~ 0.6Pa, and the working temperature is 320 ~ 330 ℃;
(2) sputtering and coating until the thickness of the coating is 0.0002-0.0003 mm;
(3) And after the sputtering is stopped, adjusting the parameters to the initial values, and cooling the thread gauge.
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CN104928637A (en) * 2015-05-19 2015-09-23 上海新弧源涂层技术有限公司 Nanometer composite structure protective coating made from high hardness CrAlSiN and preparation method of nanometer composite structure protective coating
CN105296949A (en) * 2015-11-23 2016-02-03 上海理工大学 Nano-structure coating with ultra-high hardness and manufacturing method thereof

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CN101637921A (en) * 2008-07-31 2010-02-03 赢创德固赛有限责任公司 Use of ceramic cutting or stamping tools or those tools containing ceramics as cutters or stampers for compound materials containing ceramics
TW201122123A (en) * 2009-12-30 2011-07-01 Hon Hai Prec Ind Co Ltd Colorized casing
CN102345099A (en) * 2011-09-15 2012-02-08 西北工业大学 Preparation method of multilayer pitting corrosion-resistant coating of steam turbine blade material surface
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