CN107579075A - Display device - Google Patents
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- Publication number
- CN107579075A CN107579075A CN201710067676.6A CN201710067676A CN107579075A CN 107579075 A CN107579075 A CN 107579075A CN 201710067676 A CN201710067676 A CN 201710067676A CN 107579075 A CN107579075 A CN 107579075A
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- China
- Prior art keywords
- display device
- connecting portion
- substrate
- conductive layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
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- 238000004519 manufacturing process Methods 0.000 description 24
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- 239000004020 conductor Substances 0.000 description 10
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- -1 region Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
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- 239000007769 metal material Substances 0.000 description 3
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- OGMBGEBDYBDOEN-UHFFFAOYSA-N [Zn].[Sb]=O Chemical compound [Zn].[Sb]=O OGMBGEBDYBDOEN-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of display device, comprising substrate, has first surface and second surface, second surface is relative to first surface;First conductive layer, is arranged on first surface;Second conductive layer, is arranged on second surface;Processing unit, it is arranged on second surface, and is electrically connected with the second conductive layer;And first connecting portion, it is at least partially arranged in substrate, and second surface is through to by first surface, wherein the first conductive layer is electrically connected by first connecting portion with the second conductive layer.
Description
Technical field
The present invention relates to display device, and more particularly to the display device in substrate with connecting portion.
Background technology
With the development of digital technology, display device has been widely used in the every aspect of daily life, such as
It is widely used to the modernization information equipment such as TV, notebook, computer, mobile phone, intelligent mobile phone.Display dress at present
In putting, processing unit and display unit are arranged in the similar face of substrate, and the border of non-display area is larger so that effectively display
Space is by shrinkage limit.
The content of the invention
Some embodiments of the present invention provide display device, comprising substrate, have first surface and second surface, the second table
Face is relative to first surface;First conductive layer, is arranged on first surface;Second conductive layer, is arranged on second surface;Processing
Unit, it is arranged on second surface, and is electrically connected with the second conductive layer;And first connecting portion, it is at least partially arranged at substrate
It is interior, and second surface is through to by first surface, wherein the first conductive layer is electrically connected by first connecting portion with the second conductive layer.
For allow the embodiment of the present invention feature and advantage can become apparent, it is cited below particularly go out preferred embodiment, and coordinate
Appended accompanying drawing, is described in detail below.
Brief description of the drawings
Fig. 1 is some embodiments of the invention, the sectional view of display device;
Fig. 2A~Fig. 2 E are some embodiments of the invention, the signal of each stage manufacture craft of the connecting portion formed in substrate
Figure, wherein Fig. 2A~Fig. 2 D are stereograms, and Fig. 2 E are sectional views;
Fig. 3 A~Fig. 3 F are some embodiments of the invention, the signal of each stage manufacture craft of the connecting portion formed in substrate
Figure, wherein Fig. 3 A~Fig. 3 E are stereograms, and Fig. 3 F are sectional views;
Fig. 4 A~Fig. 4 E are some embodiments of the invention, and each stage for forming the substrate with through hole and blind hole makes work
The sectional view of skill;
Fig. 5 A~Fig. 5 B are the sectional view of some embodiments of the invention, substrate and through hole;
Fig. 6 A are some embodiments of the invention, the sectional view of display device;
Fig. 6 B are some embodiments of the invention, the top view of the circuit configuration of display device as shown in Figure 6A;
Fig. 6 C are some embodiments, along the diagrammatic cross-section of the C-C ' tangent lines of the display device shown in Fig. 6 B;
Fig. 6 D are some embodiments, along the diagrammatic cross-section of the D-D ' tangent lines of the display device shown in Fig. 6 B;
Fig. 6 E are some embodiments, along the diagrammatic cross-section of the E-E ' tangent lines of the display device shown in Fig. 6 B;
Fig. 6 F are some embodiments of the invention, the top view of the display device of the change case shown in Fig. 6 B;
Fig. 7 A are some embodiments of the invention, the sectional view of display device;
Fig. 7 B are some embodiments of the invention, the top view of the circuit configuration of display device as shown in Figure 7 A;
Fig. 7 C are some embodiments, along the diagrammatic cross-section of the F-F ' tangent lines of the display device shown in Fig. 7 B;
Fig. 7 D are some embodiments, along the diagrammatic cross-section of the G-G ' tangent lines of the display device shown in Fig. 7 B;
Fig. 7 E are some embodiments, along the diagrammatic cross-section of the H-H ' tangent lines of the display device shown in Fig. 7 B;
Fig. 7 F are some embodiments of the invention, the top view of the display device of the change case shown in Fig. 7 B;
Fig. 8 is some embodiments of the invention, the circuit diagram of de-multiplexer;
Fig. 9 is some embodiments of the invention, the top view of display device;
Figure 10 A are some embodiments, along the diagrammatic cross-section of the A-A ' tangent lines of the display device shown in Fig. 9;
Figure 10 B are some embodiments, along the diagrammatic cross-section of the B-B ' tangent lines of the display device shown in Fig. 9;
Figure 11 A are some embodiments of the invention, the partial sectional view of display device;
Figure 11 B are the local top view of some embodiments of the invention, as shown in Figure 11 A display device;
Figure 12 is some embodiments of the invention, the partial sectional view of display device;
Figure 13 is some embodiments of the invention, the partial sectional view of display device;
Figure 14 A are some embodiments of the invention, the partial sectional view of display device;
Figure 14 B are the local top view of some embodiments of the invention, as shown in Figure 14 A display device;Figure 15 A are the present invention
Some embodiments, the partial sectional view of display device;
Figure 15 B are the local top view of some embodiments of the invention, as shown in fig. 15 display device;Figure 16 is the present invention
Some embodiments, the sectional view of display device;
Figure 17 is some embodiments of the invention, the sectional view of display device;
Figure 18 is some embodiments of the invention, the sectional view of display device.
Symbol description
10~processing unit;
20~substrate;
20A~first surface;
20B~second surface;
30~first connecting portion;
41~the first conductive layers;
42~the second conductive layers;
50~display element layer;
100~the first bearing substrates;
101~the second bearing substrates;
110~column;
120~substrate;
120A~first surface;
120B~second surface;
130~first connecting portion;
130A~via hole;
140~display element layer;
141~processing unit;
150~cushion;
160~conductive pole;
180~pellicle photomask;
190~blind hole;
200~through hole;
210~active region;
220~bent area;
230~gate driving circuit area;
240~metal material;
240A~conductive layer;
240B~first connecting portion;
251~the first conductive layers;
251a~the first;
251b~the second;
252~the second conductive layers;
260~display element layer;
270~processing unit;
290~gate driving circuit;
300~space;
The touch-control transport part of 306A~first;
306SD~source/drain layer
303~semiconductor layer;
306G~grid;
320~insulating barrier;
325A~insulating barrier;
325B~insulating barrier;
330~doped region;
340~channel region;
350~grid layer;
350A~conductive part;
360~contact hole;
360C~contact hole;
370~pixel-driving circuit;
The touch-control transport part of 380A~second;
380SD~source/drain;
380C~contact hole;
400~active layers;
410~insulating barrier
420~electric capacity;
430~insulating barrier;
435~pixel defining layer;
440~first electrode;
The touch-control transport part of 440A~the 3rd;
450~luminescent layer;
460~second electrode;
500~encapsulated layer;
510A~touch control electrode;
510B~touching signals line;
520~touch-control transport part;
530~touching signals line;
530A~connecting portion;
540~electrically conductive ink;
550~light-emitting component;
550C~contact hole;
600~processing unit;
610~substrate;
610A~first surface;
610B~second surface;
620~first connecting portion;
631~the first conductive layers;
632~the second conductive layers;
640~display element layer;
651~second connecting portion;
650A~display signal line;
650B~output signal circuit;
660~de-multiplexer;
670~data wire;
690~the second insulating barriers;
691~insulating barrier;
692~insulating barrier;
700~the first insulating barriers;
710~processing unit;
720~wire;
721~the first conductive layers;
722~the second conductive layers;
730~first connecting portion;
740~substrate;
740A~first surface;
740B~second surface;
750~display element;
751~second connecting portion;
760~gate driving circuit;
760A~display signal line;
760B~output signal circuit;
770~de-multiplexer;
780~data wire;
790~the first insulating barriers;
800~the second insulating barriers;
810~processing unit;
820~de-multiplexer;
1000~display device;
2000~display device;
The part of 2000P~display device;
4000~display device;
4000A~Touch Zone;
4000B~peripheral region;
5000~display device;
6000~display device;
A, B, C~first connecting portion;
D1, D2, Dn~first connecting portion;
G1~Gn first connecting portions;
A1-A5~area;
P1-P3~projection;
R~reference plane;
T1-T4~thin film transistor (TFT);
Y0-Y5~data wire.
Embodiment
Make in detail below for the manufacture method of the device substrate of some embodiments of the invention, display device and display device
Explanation.It is to be understood that following narration provides many different embodiments or example, to implement some embodiments of the invention
Different patterns.Specific element and arrangement mode as described below only simply clearly describe some embodiments of the invention.Certainly,
These are only illustrating and the restriction of non-invention.In addition, the label repeated or sign may be used in different embodiments.This
It is a little to repeat only for simply clearly describing some embodiments of the invention, the different embodiments and/or structure discussed are not represented
Between there is any relevance.Furthermore when address a first material layer be located in a second material layer or on when, including first
The situation that material layer directly contacts with second material layer.Or, it is also possible to the situation of one or more other materials layers is separated with,
In this situation, it may be not directly contacted between first material layer and second material layer.
In addition, the term of relativity may be used in embodiment, such as " relatively low " or " bottom " and " higher " or " top ",
To describe relativeness of accompanying drawing element for another element.It is appreciated that, if the device upset of accompanying drawing made
It turns upside down, then the element described in " relatively low " side will be as in the element of " higher " side.
Here, " about ", " about ", the term of " on the whole " are generally represented within the 20% of a set-point or scope, preferably
It is within 10%, and is more preferably within 5%, or within 3%, or within 2%, or within 1%, or within 0.5%.Give herein
Quantity be quantity about, that is, in the case of no certain illustrated " about ", " about ", " on the whole ", can still imply "
About ", " about ", the implication of " on the whole ".
It is appreciated that, although can be used term " first ", " second ", " the 3rd " etc. to describe various elements, group herein
Into composition, region, layer and/or part, these elements, constituent, region, layer and/or part should not be limited by these terms
It is fixed, and these terms are intended merely to distinguish different elements, constituent, region, layer and/or part.Therefore, following discussion
One first element, constituent, region, layer and/or part can be in the situation of the teaching without departing from some embodiments of the invention
Under be referred to as one second element, constituent, region, layer and/or part.
Unless otherwise defined, belonging to whole terms (including technology and scientific words) as used herein have and disclosed with this piece
The identical connotation that is generally understood that of general technology person.It is appreciated that, these terms, such as determines in usually used dictionary
The term of justice, it should be interpreted to the meaning consistent with the background or context of correlation technique and the present invention, without Ying Yiyi
Idealization or excessively formal mode are understood, unless having special definition in the embodiment of the present invention.
Some embodiments of the invention can coordinate accompanying drawing to understand in the lump, and the accompanying drawing of the embodiment of the present invention is also regarded as the present invention in fact
Apply the part that example illustrates.It is to be understood that the accompanying drawing of the embodiment of the present invention is not with actual device and the scale of element.
The shape of embodiment may be exaggerated in the accompanying drawings with thickness clearly to show the feature of the embodiment of the present invention.In addition, accompanying drawing
In structure and device illustrate in a schematic manner, clearly to show the feature of the embodiment of the present invention.
In some embodiments of the invention, the term of relativity for example " under ", " on ", " level ", " vertical ", " under ", "
On ", " top ", " bottom " etc. should be understood orientation depicted in this section and relevant drawings.The use of this relativity
Language purposes of discussion merely for convenience, it does not represent device that it is described and need to be manufactured or be operated with particular orientation.And close
In term such as " connection ", " interconnection " etc. of engagement, connection, unless defined, it otherwise can refer to two structures and directly contact, or
Person can also refer to two structures and non-direct contact, wherein there is other structures to be located between this two structures.And this is on engaging, company
The term connect may also comprise two structures and all may move, or the situation that two structures are all fixed.
It is worth noting that, " substrate " one word may include established element on transparency carrier and be covered in base below
Various film layers on plate, thereon side can form any required transistor unit, but here for accompanying drawing is simplified, only with
Smooth substrate represents it.
First, referring to Fig. 1, Fig. 1 is some embodiments of the invention, the sectional view of display device 1000.Display device 1000
Include processing unit 10, substrate 20 and display element layer 50.Processing unit 10 is for example including integrated circuit (IC;integrated
Circuit), microprocessor, memory element, other can process signal element or above-mentioned any combinations.Substrate 20 can be
Bright substrate, such as can be glass substrate, ceramic substrate, plastic substrate or other any suitable substrates.Substrate 20 can be hard
Substrate or flexible base plate.Display element layer 50 can include gate driving circuit, data wire, thin film transistor (TFT), luminescent layer, electricity
Appearance, inductance, passive microelectronic element, active microelectronic element or above-mentioned any combinations.
In some embodiments, as shown in figure 1, substrate 20 has an a first surface 20A and second surface 20B, the second table
Face 20B is relative to first surface 20A.First conductive layer 41 is arranged on first surface 20A, and the second conductive layer 42 is arranged at second
On the 20B of surface.Processing unit 10 is arranged on second surface 20B, and is electrically connected with the second conductive layer 42.First connecting portion 30 to
Small part is arranged in substrate 20, and is through to second surface 20B by first surface 20A.First conductive layer 41 and display element
Layer 50 electrically connects.Processing unit 10 is electrically connected by first connecting portion 30 with the first conductive layer 41, thus makes processing unit 10
Signal is transferred to display element layer 50.
Refering to Fig. 2A~Fig. 2 E, Fig. 2A~Fig. 2 E are some embodiments of the invention, and the company through substrate is formed in substrate
The manufacture craft of socket part.Following manufacture craft can be applied to form first connecting portion in some embodiments of the invention in substrate.
First, refering to Fig. 2A, there is provided the first bearing substrate 100, and multiple columns 110 are provided with the first bearing substrate 100.
Then, refering to Fig. 2 B, substrate 120 is deposited to the first bearing substrate 100 with depositing manufacture craft so that multiple
Column 110 protrudes from substrate 120.The material of substrate 120 may be, for example, glass, photosensitivity material, fluoropolymer resin or its
Its suitable material.Substrate 120 can be hard substrate or flexible base plate.
Then, the first bearing substrate 100 for being provided with multiple columns 110 is removed, formation has multiple via holes
130A substrate 120.Substrate 120 is transferred on another the second flat bearing substrate 101 again, as shown in Figure 2 C.
Then, as shown in Figure 2 D, conductive material is inserted in multiple via hole 130A and formed using depositing manufacture craft
First connecting portion 130.And display element layer 140 is made on substrate 120.Then, the second bearing substrate 101 is removed.
Finally, as shown in Figure 2 E, processing unit 141 is set, and the edge of substrate 120 is bent.Foundation other embodiment,
The edge of substrate 120 also can be without bending.In this embodiment, substrate 120 has multiple first connecting portions 130, and handles single
Member 141 then can be electrically connected to display element layer 140 or other electron component by these first connecting portions 130.
It is some embodiments of the invention refering to Fig. 3 A~Fig. 3 F, Fig. 3 A~Fig. 3 F, the company through substrate is formed in substrate
The manufacture craft of socket part.Following manufacture craft can be applied to form first connecting portion in some embodiments of the invention in substrate.
First, refering to Fig. 3 A, there is provided the first bearing substrate 100, and cushion 150 is set on the first bearing substrate 100.Cushion
150 can be silica, silicon nitride, silicon oxynitride or other any suitable insulating materials.
Then, as shown in Fig. 3 B~Fig. 3 C, conductive material is formed into multiple conductive poles using deposition and lithographic fabrication process
160 on cushion 150.Substrate 120, and coated with conductive post 160 are formed on cushion 150 using manufacture craft is deposited.Lead
Electric post 160 can be metal column.Substrate 120 can be hard substrate or flexible base plate.
Then, as shown in Figure 3 D, the bearing substrate 100 of cushion 150 and first is removed, and substrate 120 is moved to second and held
On carried base board 101.There are multiple conductive poles 160 in substrate 120.
Then, as shown in FIGURE 3 E, display element layer 140 is made on substrate 120.
Finally, as illustrated in Figure 3 F, processing unit 141 is set, and the edge of substrate 120 is bent.Foundation other embodiment,
The edge of substrate 120 also can be without bending.In this embodiment, substrate 120 has multiple the first connections being made up of conductive pole
Portion 160, and processing unit 141 can then be electrically connected to display element layer 140 or other electronics member by these first connecting portions 160
Part.
It is some embodiments of the invention refering to Fig. 4 A~Fig. 4 E, Fig. 4 A~Fig. 4 E, blind hole 190 is formed in substrate and is run through
The sectional view of the manufacture craft in each stage in hole 200.First, as shown in Figure 4 A, there is provided substrate 120, substrate 120 include active region
210th, bent area 220 and gate driving circuit area 230.In some embodiments, pellicle photomask (half-tone is utilized
Mask) 180 patterned substrate 120, make substrate 120 that there is blind hole 190 and through hole 200.As shown in Figure 4 A, through hole 200 passes through
Substrate 120 is worn, blind hole 190 does not run through substrate 120 then.In some embodiments, blind hole 190 is arranged at bent area 220, through hole
200 are arranged at gate driving circuit area 230, but are not limited to this.The depth of blind hole 190 is not particularly limited, in some realities
Example is applied, the depth of blind hole 190 is less than the half of the thickness of substrate 120.
Then, as shown in Fig. 4 B~Fig. 4 C, conductive material (such as metal material) 240 is deposited to blind hole 190 and run through
In hole 200.In some embodiments, when conductive material 240 is filled to the depth of the half of through hole 200, by the turn-over of substrate 120, and
And continue to deposit conductive material 240, fill up through hole 200 to conductive material 240.As shown in Figure 4 C, passed through in this way, can be formed to fill up
The conductive layer that first connecting portion 240B that the conductive material of perforation 200 is formed, the conductive material inserted in blind hole 190 are formed
240A.Also, the first conductive layer 251 is formed in being used as the first conductive pad on the first surface 120A of substrate 120, second is formed and leads
Electric layer 252 is in being used as the second conductive pad on the second surface 120B of substrate 120.
Then, as shown in Fig. 4 D~Fig. 4 E, form display element layer 260 and substrate 120 is provided with the first conductive layer 251
On surface (first surface 120A), and processing unit 270 is arranged on the surface that substrate 120 is provided with the second conductive layer 252
On (second surface 120B).Display element layer 260 electrically connects with the first conductive layer 251.The conductive layer of processing unit 270 and second
252 electrical connections.
In certain embodiments, conductive layer 240A, first connecting portion 240B, the first conductive layer 251, the second conductive layer 250
It can be formed by identical conductive material 240.In some embodiments, conductive material 240 may include copper, aluminium, molybdenum, tungsten, gold, chromium,
Nickel, platinum, titanium, iridium, rhodium, above-mentioned alloy, combinations of the above or the good metal material of other electric conductivity.
Fig. 5 A are the sectional view of some embodiments of the invention, substrate 120 and first connecting portion 240B.As shown in Figure 5A,
One connecting portion 240B has one first area A1 in the first surface 120A of substrate 120 section, in the second surface of substrate
120B section has a second area A2.In some embodiments, the first area A1 and second area A2 is different, for example, first
Area A1 is more than second area A2, can so increase the yield in first connecting portion manufacture craft, reduces connecting portion fracture machine
Rate..
Fig. 5 B are the sectional view of some embodiments of the invention, substrate 120 and first connecting portion 240B.As shown in Figure 5 B,
One connecting portion 240B has one first area A3 in the first surface 120A of substrate 120 section, in the second surface of substrate
120B section has a second area A5.First area A3 and second area A5 can be identical or different.First connecting portion
240B has one the 3rd area A4 in the section of a reference plane R.According to some embodiments, reference plane R is located at first surface 120A
Between second surface 120B and parallel first surface 120A.According to some embodiments, reference plane R can be located at first surface 120A
Between second surface 120B at distance D half, as shown in Figure 5 B.According to some embodiments, the first area A3 and
Three area A4 can be difference, for example, the first area A3 is more than the 3rd area A4, can so increase in first connecting portion manufacture craft
Yield, reduce connecting portion fracture probability.
Refering to Fig. 6 A, Fig. 6 A are some embodiments of the invention, the sectional view of display device 5000.Display device 5000 includes
Processing unit 600, substrate 610 and display element layer 640.Substrate 610 has an a first surface 610A and second surface 610B,
Second surface 610B is relative to first surface 610A.First surface 610A is commonly referred to as the front of substrate, and second surface 610B leads to
The commonly referred to as back side of substrate.Display element layer 640 is arranged on first surface 610A.One first conductive layer 631 is arranged at first
On the 610A of surface, one second conductive layer 632 is arranged on second surface 610B.Processing unit 600 is arranged at second surface 610B
On, and electrically connected with the second conductive layer 632.First connecting portion 620 is at least partially arranged in substrate 610, and by first surface
610A is through to second surface 610B.First conductive layer 631 is electrically connected by first connecting portion 620 with the second conductive layer 632, by
This makes the signal of processing unit 600 be transferred to display element layer 640.Processing unit 600 is for example including integrated circuit (IC;
Integrated circuit), microprocessor, memory element, other can process signal element or above-mentioned any combinations.
Refering to Fig. 6 B, Fig. 6 B are some embodiments of the invention, the circuit configuration of display device 5000 as shown in Figure 6A
Top view.In order that accompanying drawing is succinct, Fig. 6 B only illustrate processing unit 600, first connecting portion 620 and other are located at display element layer
Circuit in 640.As shown in Figure 6B, display element layer 640 includes gate driving circuit 650 and data wire 670, wherein, grid
Drive circuit 650 includes the display signal line 650A of (being, for example, Y-direction) extension in the first direction (for example, input signal is electric
Road), and the output signal circuit 650B (for example, scan line) of (being, for example, X-direction) extension in a second direction.Gate driving circuit
650 and data wire 670 be arranged on first surface 610A.In some embodiments, processing unit 600 is via multiple first connecting portions
620 and first conductive layer 631 be electrically connected to the display signal line 650A of gate driving circuit 650.Thus, processing unit 600
Signal is transferred to the data of (Y-direction) extension in the first direction via the output signal circuit 650B of gate driving circuit 650 again
Line 670.It is vertical with first direction, second direction in this embodiment, the bearing of trend of first connecting portion 620.
Fig. 6 C are along the diagrammatic cross-section of the C-C ' tangent lines of the display device 5000 shown in Fig. 6 B, and Fig. 6 D are D-D ' tangent lines
Diagrammatic cross-section, Fig. 6 E are the diagrammatic cross-section of E-E ' tangent lines.As shown in Figure 6 C, it is conductive to be arranged at first for the first insulating barrier 700
On layer 631, the second insulating barrier 690 is arranged on the first insulating barrier 700, and data wire 670 is arranged on the second insulating barrier 690.Such as
Shown in Fig. 6 D, second connecting portion 651 is at least partially disposed in the first insulating barrier 700 and runs through the first insulating barrier 700.Display letter
Number line 650A is arranged on the first insulating barrier 700.Gate driving circuit 650 electrically connects with the first conductive layer 631.For example, grid
The display signal line 650A of drive circuit 650 electrically connects via second connecting portion 651 with the first conductive layer 631.As illustrated in fig. 6e,
Second connecting portion 651 is arranged in the first insulating barrier 700 and the second insulating barrier 690 and exhausted through the first insulating barrier 700 and second
Edge layer 690.Data wire 670 electrically connects via second connecting portion 651 with the first conductive layer 631.
Referring again to Fig. 6 C, in some embodiments, the first conductive layer 631 is more than the in (maximum) width along C-C ' directions
One connecting portion 620 is in (maximum) width along C-C ' directions, and the second conductive layer 632 is wide in (maximum) along C-C ' directions
Degree is more than first connecting portion 620 in (maximum) width along C-C ' directions.First conductive layer 631 and the second conductive layer 632 can
As conductive pad, there is the effect that larger width can ensure that conduction.In some embodiments, the position of processing unit 600 connects with first
The position correspondence of socket part 620 is set, for example, from terms of the first surface 610A of substrate 610 direction, processing unit 600
Least partially overlapped first connecting portion 620, and first connecting portion 620 at least with the second conductive layer 632 or the first conductive layer 631
It is a part of overlapping.
Fig. 6 F are Fig. 6 B change case.As fig 6 f illustrates, display device 5000 also includes a de-multiplexer 660, is arranged at
On first surface 610A, and electrically connected with the first conductive layer 631.By processing unit 600 Lai a signal line can be via solution
Multiplexer 660, and select to distribute to one in multiple output ends.For example, shown in Fig. 6 F, by processing unit 600 Lai
One signal line can be via de-multiplexer 660, and selects to distribute to one in three data lines.In this way, three in script Fig. 6 B
Data line 670 need to arrange in pairs or groups three first connecting portions 620, and by Fig. 6 F design, three data lines 670 only need collocation one
First connecting portion 620, the quantity of first connecting portion 620 can be reduced.Sectional view corresponding to Fig. 6 F, with earlier figures 6C~Fig. 6 E classes
Seemingly, will not be repeated here.
Refering to Fig. 7 A, Fig. 7 A are other embodiments of the invention, the sectional view of display device 6000.Display device 6000 is wrapped
Containing processing unit 710, substrate 740 and display element layer 750.Substrate 740 has a first surface 740A and a second surface
740B, second surface 740B is relative to first surface 740A.Display element layer 750 is arranged on first surface 740A.One first
Conductive layer 721 is arranged on first surface 740A, and one second conductive layer 722 is arranged on second surface 740B.Processing unit 710
It is arranged on second surface 740B, tool electrically connects with the second conductive layer 722.First connecting portion 730 is at least partially arranged at substrate
In 740, and second surface 740B is through to by first surface 740A.First conductive layer 721 passes through first connecting portion 730 and second
Conductive layer 722 electrically connects, and the signal of processing unit 710 is transferred to display element layer 750.
In this embodiment, from terms of the first surface 740A of substrate 740 direction, processing unit 710 and first connects
Socket part 730 is simultaneously underlapped, but separate each other.Processing unit 710 is connected by the conductive layer 722 and first of wire 720 and second
Socket part 730 electrically connects, and first connecting portion 730 electrically connects via the first conductive layer 721 with display element layer 750.
Refering to Fig. 7 B, Fig. 7 B are some embodiments of the invention, the circuit configuration of display device 6000 as shown in Figure 7 A
Top view.In order that accompanying drawing is succinct, Fig. 7 B only illustrate processing unit 710, wire 720, first connecting portion 730 and other positioned at aobvious
Show the circuit in element layer 750.As shown in Figure 7 B, display element layer 750 includes gate driving circuit 760 and data wire 780, its
In, gate driving circuit 760 includes the display signal line 760A of (being, for example, Y-direction) extension in the first direction (for example, input letter
Number circuit), and the output signal circuit 760B (for example, scan line) of (being, for example, X-direction) extension in a second direction.In some realities
Example is applied, processing unit 710 is connected to first connecting portion 730 via multiple wires 720.In this embodiment, processing unit 710 is sequentially
The display signal line 760A of gate driving circuit 760 is electrically connected to by wire 720, first connecting portion 730.
Fig. 7 C are along the diagrammatic cross-section of the F-F ' tangent lines of the display device 6000 shown in Fig. 7 B, and Fig. 7 D are G-G ' tangent lines
Diagrammatic cross-section, Fig. 7 E are the diagrammatic cross-section of H-H ' tangent lines.As illustrated in fig. 7d, it is conductive to be arranged at first for the first insulating barrier 790
On layer 721.Second connecting portion 751 is at least partially disposed in the first insulating barrier 790 and runs through the first insulating barrier 790.Display letter
Number line 760A is arranged on the first insulating barrier 790.Gate driving circuit 760 electrically connects with the first conductive layer 721.For example, grid
The display signal line 760A of drive circuit 760 electrically connects via second connecting portion 751 with the first conductive layer 721.
As seen in figure 7e, the second insulating barrier 800 is arranged on the first insulating barrier 790.Second connecting portion 751 is arranged on first
In the insulating barrier 800 of insulating barrier 790 and second and run through the first insulating barrier 790 and the second insulating barrier 800.Data wire 780 is via
Two connecting portions 751 electrically connect with the first conductive layer 721.According to some embodiments, first connecting portion 730 and second connecting portion 751
Can be least partially overlapped.As shown in Fig. 7 A and Fig. 7 C, from terms of the direction of substrate 740, first connecting portion 730 is simultaneously not provided with
In the surface of processing unit 710, processing unit 710 is electrically connected by wire 720 with first connecting portion 730.
Fig. 7 F are Fig. 7 B change case.As shown in Figure 7 F, display device 6000 also includes a de-multiplexer 770, is arranged at
On the second surface 740B of substrate 740, and electrically connected with the second conductive layer 722.By processing unit 710 Lai a signal line
Can be via de-multiplexer 770, and select to distribute to one in multiple output ends.For example, shown in Fig. 7 F, by processing unit
710 and the signal line come can be via de-multiplexer 770, and select to distribute to one in three data lines.In this way, originally
Three data lines 780 need to arrange in pairs or groups three first connecting portions 730 in Fig. 7 B, and only be needed by Fig. 7 F design, three data lines 780
One first connecting portion 730 of collocation, the quantity of first connecting portion 730 can be reduced.Sectional view corresponding to Fig. 6 F, with earlier figures 6C~
Fig. 6 E are similar, will not be repeated here.
Refering to Fig. 8, Fig. 8 is some embodiments of the invention, the circuit diagram of de-multiplexer 820.In earlier figures 6F, Fig. 7 F
De-multiplexer 660,770, such as can have as Fig. 8 de-multiplexer 820 circuit.The electricity of de-multiplexer in Fig. 6 F and Fig. 7 F
Road is similar with principle, is only explained below in case of Fig. 6 F.As shown in figure 8, processing unit 810 and first connecting portion
A, B, C, D1, D2~Dn, G1~Gn couplings.Wherein, first connecting portion A, B, C can produce as the clock pulses of de-multiplexer 820
Raw device, first connecting portion D1 are coupled to data wire Y0, Y1, Y2 source electrode, and first connecting portion D2 is coupled to data wire Y3, Y4, Y5
Source electrode.In some embodiments, there is the source electrode that n first connecting portion is coupled to data wire, but it is succinct for accompanying drawing, only illustrate first
Data wire corresponding to connecting portion D1, D2.First connecting portion G1~Gn is then coupled to the source electrode (not shown) of gate driving circuit.
As shown in figure 8, first connecting portion A is coupled to data wire Y0 and Y3 grid, first connecting portion B is coupled to data wire Y1 and Y4
Grid, and first connecting portion C is coupled to data wire Y2 and Y5 grid.In this embodiment, pass through gate generator (i.e.
One connecting portion A, B, C) signal combination, opening for three data line Y0, Y1, Y2 can be controlled using a first connecting portion D1
Close.Thus, the quantity of first connecting portion can be reduced.
According to some embodiments, processing unit is arranged on the back side of substrate.According to some embodiments, positioned at substrate back
Processing unit is electrically connected to carry out signal using the first connecting portion through substrate with positioned at the display element layer of substrate front side
Transmission.In this way, processing unit is in the front of substrate and prevents take up extra area, therefore narrow border or no border can be formed
(borderless) display device.
Fig. 9 is some embodiments of the invention, the top view of display device 2000.To clearly show that the row between each element
Row relation, the display device 2000 shown in Fig. 9 only illustrate pixel-driving circuit 370, gate driving circuit 290 and processing unit
270.As shown in figure 9, gate driving circuit 290 is arranged at the both sides of display device 2000, and along a first direction (Y-direction)
Extension.Processing unit 270 may be provided at the opposite side of display device 2000, may differ from the side of the setting of gate driving circuit 290,
And may be provided between two gate driving circuits 290, and extend along second direction (X-direction).Fig. 9 shows two raster data models
Circuit.But this technology personage is understood, a gate driving circuit can be also only included in display device 2000.
Refering to Figure 10 A, Figure 10 A are some embodiments, and the section along the A-A ' tangent lines of the display device 2000 shown in Fig. 9 shows
It is intended to.As shown in Figure 10 A, gate driving circuit 290 is arranged on substrate 120, and is arranged at the both sides of substrate 120.One
A little embodiments, pixel-driving circuit 370 is located at different layers with gate driving circuit 290, for example, gate driving circuit 290 and picture
Plain drive circuit 370 may be provided on the first surface 120A of substrate 120, and pixel-driving circuit 370 is arranged on raster data model electricity
The top of road 290.In this embodiment, the space between gate driving circuit 290, substrate 120 and pixel-driving circuit 370
300 circuits that can be used to set other electron component.In some embodiments, space 300 can be used to set touch-control circuit or sense
Slowdown monitoring circuit.
Refering to Figure 10 B, Figure 10 B are some embodiments, and the section along the B-B ' tangent lines of the display device 2000 shown in Fig. 9 shows
It is intended to.As shown in Figure 10 B, processing unit 270 is arranged on the second surface 120B of substrate 120.It is single in some embodiments, processing
Member 270 can least partially overlapped first connecting portion 240B.For example, processing unit 270 is arranged in first connecting portion 240B,
The underface of one conductive layer 251, the second conductive layer 252.In other embodiments, processing unit 270 is not arranged on the first company
Socket part 240B underface, processing unit 270 can be electrically connected to first connecting portion 240B via extra wire (not illustrating).Example
Such as, Figure 10 B can take such as Fig. 7 A mode, processing unit 710 to be electrically connected by wire 720 with first connecting portion 730.That is,
In Figure 10 B, processing unit 270 can be connected by wire (not illustrating, similar wire 720) and the second conductive layer 252 with first
Portion 240B is electrically connected.According to some embodiments, the processing unit 270 being arranged on the second surface 120B of substrate can be via
One connecting portion 240B is electrically connected to the gate driving circuit 290 on the first surface 120A for being arranged at substrate.According to some implementations
Example, the processing unit 270 being arranged on the second surface 120B of substrate, can be electrically connected to via first connecting portion 240B and be arranged at
Touch-control circuit or sensing circuit on the first surface 120A of substrate.Touch-control circuit or sensing circuit may be disposed in space 300.
According to some embodiments, gate driving circuit 290 and pixel-driving circuit 370 at least partially overlap.Pass through this
Kind set-up mode, gate driving circuit 290 is on substrate and prevents take up extra area, therefore can form narrow border or no side
The display device 2000 on boundary.According to some embodiments, processing unit 270 is arranged on the second surface 120B of substrate 120, without
The first surface 120A of substrate 120 area is occupied, therefore narrow border or the display device 2000 without border can be formed.
Refering to Figure 11 A, Figure 11 A are one embodiment of the invention, show the local 2000P of Figure 10 A display devices detailed electricity
Road.Figure 11 A only show that the local 2000P of display device 2000, local 2000P include the part of gate driving circuit 290, as
Plain drive circuit 370, and light-emitting component 550.Gate driving circuit 290, pixel-driving circuit 370, and light-emitting component 550 can be set
It is placed on the first surface 120A of substrate 120.Pixel-driving circuit 370 may include thin film transistor (TFT) T1, T2, T3.T1 can be out
Transistor is closed, T2 can be driving transistor, and T3 can be to reset (reset) transistor.Gate driving circuit 290 may include that output is brilliant
Body pipe T4.Figure 11 A only draw three transistors in pixel-driving circuit 370.This technology personage is, it should be appreciated that according to actual need
Will, pixel-driving circuit may also comprise more transistors.
First conductive layer 251 is arranged on the first surface 120A of first substrate 120.Second conductive layer 252 and processing are single
Member 270 is arranged on the second surface 120B of first substrate 120.First conductive layer 251 may include first 251a and second
251b.First 251a can be located at output transistor T4 lower section, and the shading available for semiconductor layer in T4 303 is used.First
Second 251b of conductive layer 251, can be located at first connecting portion 240B corresponding position, and via first connecting portion 240B and
Electrically connected with processing unit 270.According to some embodiments, first 251a and second 251b can be identical layer.In the present invention
In book, A layers and the declaration of will that B layers are identical layer, A layers and B layers can be used identical material, schemed with identical manufacture craft
Case is made.That is, the conductive layer of identical material can be used to scheme with identical manufacture craft for first 251a and second 251b
Case is made.
In Figure 11 A, processing unit 270 is located at first connecting portion 240B corresponding position, that is, processing unit 270 to
The overlapping first connecting portion 240B of small part.However, according to other embodiment, processing unit 270 also can not overlapping first connecting portion
240B.For example, such as Fig. 7 A mode, processing unit 270 can be taken (can not to be illustrated, similar Fig. 7 A's leads by other wire
Line 720) and the second conductive layer 252 and electrically connected with first connecting portion 240B.
Insulating barrier 320 is located on the first conductive layer 251.Output transistor T4 is located on insulating barrier 320, and including semiconductor
Layer 303, grid layer 350, source/drain layer 306SD.Semiconductor layer 303 is located on insulating barrier 320, and insulating barrier 325A, which is located at, partly to be led
Between body layer 303 and grid layer 350, insulating barrier 325B is located between grid layer 350 and source/drain layer 306SD.Semiconductor layer
303 may include channel region 340 and doped region 330.
According to some embodiments, the transistor in transistor and pixel-driving circuit 370 in gate driving circuit 290 can
With identical layer.For example, in Figure 11 A, output transistor T4 source/drain layer 306SD and T1, T2 in pixel-driving circuit 370,
T3 grid 306G can be identical layer.That is, transistor T4 source/drain 306SD and transistor T1, T2, T3 grid 306G
It can be patterned obtained with identical manufacture craft by the conductive layer of identical material.
T4 can be electrically connected with switching transistor T1 with by the signal output of gate driving circuit 290 to T1.Switching transistor
T1 can electrically connect with driving transistor T2.It is top-gated polar crystal that the transistor T4 in gate driving circuit 290 is shown in Figure 11 A
Manage, the transistor T1, T2, T3 in pixel-driving circuit 370 are bottom gate gated transistors.But the present invention is not limited.T4 also may be used
For bottom gate gated transistors, T1, T2, T3 is alternatively top-gated gated transistors.Active layers in T1, T2, T3, T4 can be semiconductor, example
Such as, it can be non-crystalline silicon, polysilicon, metal oxide.The example of metal oxide can be indium gallium zinc (IGZO;indium
gallium zinc oxide).According to some embodiments of the invention, T1, T2, the active layers 400 in T3 can be IGZO, in T4
Active layers 303 can be polysilicon.
Light-emitting component 550 may be provided on pixel-driving circuit 370.Insulating barrier 410,430 can be located at the and of light-emitting component 550
Between pixel-driving circuit 370.Light-emitting component 550 includes first electrode 440, luminescent layer 450 and second electrode 460.Luminescent layer
450 are arranged between first electrode 440 and second electrode 460, and in the opening of pixel defining layer 435.Second electrode can
Cover pixel defining layer 435.First electrode 440 can be anode, and second electrode 460 can be negative electrode.Or first electrode 440 can
For negative electrode, second electrode 460 can be anode.The first electrode 440 of light-emitting component 550 (be able to can be located at exhausted via contact hole 550C
In edge layer 410,430) and electrically connected with driving transistor T2.
In some embodiments, luminescent layer 450 may include Organic Light Emitting Diode layer, in this way, display device 2000 forms one
Organic LED display device.In some embodiments, luminescent layer 450 may include inorganic light-emitting diode layer, such as can wrap
Micro- light emitting diode is included, in this way, display device 2000 forms a micro- light emitting display device.
Refering to Figure 11 B, Figure 11 B are the top view of the part (2000P) of the display device shown in Figure 11 A.Figure 11 B are only with side
Block illustrates gate driving circuit 290, pixel-driving circuit 370, luminescent layer 450 and substrate 120, to clearly show that position therebetween
Relation.The part of Figure 11 B only display pixel drive circuits 370.First surface 120A of the gate driving circuit 290 in substrate 120
On projection, be defined as the first projection P 1, projection of the pixel-driving circuit 370 on first surface 120A, be defined as the second throwing
Shadow P2, projection of the luminescent layer 450 on first surface 120A, is defined as the 3rd projection P 3.In some embodiments, such as Figure 11 B institutes
Show, in the local 2000P of display device, the first projection P 1 and the second projection P 2 are least partially overlapped.In some embodiments,
Three projection Ps 3 and the second projection P 2 are least partially overlapped, and the first projection P 1 separates each other with the 3rd projection P 3.
Refering to Figure 12, Figure 12 is other embodiments of the invention, and the local 2000P's of display Figure 10 A display devices is detailed
Circuit.Figure 12 is Figure 11 A change case, and Figure 11 A difference is that between insulating barrier 325A and 325B, display device is also
Conductive part 350A is set.Gate driving circuit 290 can be via conductive part 350A and contact hole 360C (in insulating barrier 325B)
And electrically connected with reset transistor T3.Conductive part 350A and output transistor T4 grid layer 350 can be identical layer.
Refering to Figure 13, Figure 13 is other embodiments of the invention, and the local 2000P's of display Figure 10 A display devices is detailed
Circuit.Figure 13 is Figure 11 A change case, and Figure 11 A difference is driving transistor T2 grid 308G and reset transistor
T3 grid 306G is different layers, has an insulating barrier 691 to be separated by between grid 308G and grid 306G.Insulating barrier 692 is positioned at master
Move between layer 400 and grid 308G.Reset transistor T3 grid 306G and output transistor T4 source/drain 306SD can be
Identical layer.
Refering to Figure 14 A, Figure 14 A are other embodiments of the invention, and the local 2000P's of display Figure 10 A display devices is detailed
Thin circuit.Figure 14 A are Figure 11 A change case, and Figure 11 A difference is, the position of luminescent layer 450 and gate driving circuit
290 is least partially overlapped, and the position of luminescent layer 450 and pixel-driving circuit 370 separate each other.That is, the 3rd projection P 3 and
One projection P 1 is least partially overlapped, and the 3rd projection P 3 separates each other with the second projection P 2, as shown in Figure 14 B top view.
Refering to Figure 15 A, Figure 15 A are other embodiments of the invention, and the local 2000P's of display Figure 10 A display devices is detailed
Thin circuit.Figure 15 A are Figure 11 A change case, and Figure 11 A difference is that pixel-driving circuit area 370 can be with luminescent layer 450
It is simultaneously overlapping with gate driving circuit 290.That is, first projection P 1, the second projection P 2 and the 3rd projection P 3 are at least part of
It is that three is overlapping, as shown in Figure 15 B top view.
Refering to Figure 16, Figure 16 is some embodiments of the invention, the partial sectional view of display device 4000.Display device 4000
For touch control display apparatus.Figure 16 has similar element with earlier figures 11A, for example, Figure 16 display device 4000 is driven including pixel
Dynamic circuit 370, light-emitting component 550, processing unit 270, first connecting portion 240B, the first conductive layer 251, the second conductive layer 252
Deng will not be repeated here.Pixel-driving circuit 370, such as may include switching transistor T1, driving transistor T2, reset crystal
Pipe T3, will not be repeated here.As shown in figure 16, display device 4000 further includes encapsulated layer 500, touch control electrode 510A, touch-control letter
Number line 510B, touch-control transport part 520.Touch control electrode 510A is located at the Touch Zone 4000A of display device 4000, touching signals line
510B and touch-control transport part 520 are located at peripheral region (non-touch-control area) 4000B of display device 4000.
Encapsulated layer 500 is arranged on light-emitting component 550, and touch control electrode 510A and touching signals line 510B are arranged on encapsulation
On layer 500.Encapsulated layer 500 can include sandwich construction, for example, include the structure of inorganic layer/organic layer/inorganic layer.Touch control electrode
510A and touching signals line 510B are arranged on the first surface 120 of substrate 120, and touch control electrode 510A is via touching signals line
510B and touch-control transport part 520, and electrically connected with the first conductive layer 251.Thus, processing unit 270 can be via first connecting portion
240B and touch-control transport part 520 and with touching signals line 510B carry out signal transmission.
Touch control electrode 510A and touching signals line 510B can be identical material or can be different materials.The He of touch control electrode 510
Touching signals line 510B material can include indium tin oxide (ITO), tin oxide (SnO), indium zinc oxide (IZO), indium gallium
Zinc (IGZO), indium tin zinc oxide (ITZO), antimony tin (ATO), antimony oxide zinc (AZO), metal or combinations of the above.
Touch-control transport part 520 can include the first touch-control transport part 306A, the second touch-control transport part 380A and the 3rd touch-control passes
Defeated portion 440A.In some embodiments, the first touch-control transport part 306A, the second touch-control transport part 380A and the 3rd touch-control transport part
440A can be identical layer with the electrode layer of transistor in pixel-driving circuit 370, or, can be with the electrode in light-emitting component 550
Layer is identical layer, so that manufacture craft simplifies.For example, as shown in figure 16, the first touch-control transport part 306A can be with pixel driver electricity
The grid 306G of transistor (T1, T2, or T3) is identical layer in road 370, the second touch-control transport part 380A can with transistor (T1,
T2, or T3) source/drain 380SD be identical layer.3rd touch-control transport part 440A can be with the first electrode in light-emitting component 550
440 be identical layer.Touch control electrode 510A is electrically connected via touching signals line 510B, touch-control transport part 520 and the first conductive layer 251
Connect.
Refering to Figure 17, Figure 17 is other embodiments of the invention, the sectional view of display device 4000.Figure 17 is Figure 16 change
Change example, and Figure 16 difference is that Figure 17 display device 4000 also includes touching signals line 530 and connecting portion 530A.Touch-control is believed
Number line 530 may be provided between insulating barrier 325A and insulating barrier 325B, and connecting portion 530A can run through insulating barrier 325A and insulating barrier
320.Touch control electrode 510A via touching signals line 510B, touch-control transport part 520, touching signals line 530 and connecting portion 530A and
It is electrically connected to the first conductive layer 251.
Refering to Figure 18, Figure 18 is other embodiments of the invention, the sectional view of display device 4000.Figure 18 is Figure 16 change
Change example, and Figure 16 difference is that as shown in figure 18, display device 4000 also includes electrically conductive ink 540, is arranged at touching signals line
Between 510B and the 3rd touch-control transport part 440A.Electrically conductive ink 540 can run through the pixel defining layer of encapsulated layer 500 and a part
435。
According to some embodiments, processing unit is arranged on the back side of substrate.According to some embodiments, positioned at substrate back
Processing unit utilizes the first connecting portion through substrate and is electrically connected with the display element layer positioned at substrate front side or touch control electrode layer
Connect to carry out signal transmission.In this way, processing unit is in the front of substrate and prevents take up extra area, therefore narrow border can be formed
Or the display device without border.According to some embodiments, gate driving circuit and pixel-driving circuit at least partially overlap.
In this way, gate driving circuit is on substrate and prevents take up extra area, therefore narrow border or the display without border can be formed
Device.
Although embodiments of the invention and its advantage have been disclosed above, it will be appreciated that technology neck belonging to any
Have usually intellectual in domain, without departing from the spirit and scope of the present invention, can change, substitute and retouching.In addition, this hair
Bright protection domain be not necessarily limited by manufacture craft in specification in the specific embodiment, machine, manufacture, material composition,
Device, method and step, any those of ordinary skill in the art can be out of, some embodiments of the invention disclosures
Existing or following developed manufacture craft, machine, manufacture, material composition, device, method and step are understood in appearance, as long as
More or less the same function can be implemented in the embodiment here or obtain more or less the same result all can be according to some realities of the invention
Apply example use.Therefore, protection scope of the present invention include above-mentioned manufacture craft, machine, manufacture, material composition, device, method and
Step.In addition, each claim forms an other embodiment, and protection scope of the present invention also include each claim and
The combination of embodiment.
Claims (15)
1. a kind of display device, including:
Substrate, there is first surface and second surface, the second surface is relative to the first surface;
First conductive layer, it is arranged on the first surface;
Second conductive layer, it is arranged on the second surface;
Processing unit, it is arranged on the second surface, and is electrically connected with second conductive layer;And
First connecting portion, it is at least partially arranged in the substrate, and the second surface is through to by the first surface,
Wherein first conductive layer is electrically connected by the first connecting portion with second conductive layer.
2. display device as claimed in claim 1, in addition to:One de-multiplexer, be arranged on the first surface, and with this
One conductive layer electrically connects.
3. display device as claimed in claim 1, in addition to:One de-multiplexer, be arranged on the second surface, and with this
Two conductive layers electrically connect.
4. display device as claimed in claim 1, in addition to:One gate driving circuit, it is arranged on the first surface, and with
First conductive layer electrically connects.
5. display device as claimed in claim 4, in addition to:One display signal line, it is arranged on the first surface, wherein should
Gate driving circuit electrically connects via the display signal line with first conductive layer.
6. display device as claimed in claim 5, in addition to:
First insulating barrier, it is arranged on first conductive layer;And
Second connecting portion, it is at least partially arranged in first insulating barrier and runs through first insulating barrier,
Wherein the display signal line is arranged on first insulating barrier, and the display signal line via the second connecting portion and this
One conductive layer electrically connects.
7. least partially overlapped first connecting portion of display device as claimed in claim 6, the wherein processing unit.
8. display device as claimed in claim 6, the wherein first connecting portion and the second connecting portion are least partially overlapped.
9. display device as claimed in claim 4, in addition to:Pixel-driving circuit, it is arranged at the first surface of the substrate
On,
Wherein the gate driving circuit has one first projection on the first surface, and the pixel-driving circuit is in the first surface
Upper to have one second projection, first projection and second projection are least partially overlapped.
10. display device as claimed in claim 9, in addition to:Light-emitting component, it is arranged on the first surface, wherein the hair
Optical element includes luminescent layer, and the luminescent layer has one the 3rd projection on the first surface.
11. display device as claimed in claim 10, wherein second projection and the 3rd projection are least partially overlapped, and should
First projection and the 3rd projection separate each other.
12. display device as claimed in claim 10, wherein first projection, second projection and the 3rd projection are at least
Some is that three is overlapping.
13. display device as claimed in claim 1, in addition to:
Touch control electrode, it is arranged on the first surface;And
Touching signals line, it is arranged on the first surface, wherein the touch control electrode is via the touching signals line and first conduction
Layer electrical connection.
14. display device as claimed in claim 1, the wherein first connecting portion have one first in the section of the first surface
Area, the first connecting portion have a second area in the section of the second surface, and first area is different with the second area.
15. display device as claimed in claim 1,
Wherein the first connecting portion has one first area in the section of the first surface, and the first connecting portion is in a reference plane
Section has one the 3rd area, and the reference plane is located between the first surface and second surface and the parallel first surface, wherein
First area is different with the 3rd area.
Priority Applications (7)
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CN202011256599.7A CN112542468A (en) | 2016-07-05 | 2017-02-07 | Display device |
US15/640,647 US10217416B2 (en) | 2016-07-05 | 2017-07-03 | Display device |
US15/909,097 US10529745B2 (en) | 2016-07-05 | 2018-03-01 | Display device |
US16/702,157 US10872908B2 (en) | 2016-07-05 | 2019-12-03 | Display device |
US16/950,035 US11195470B2 (en) | 2016-07-05 | 2020-11-17 | Display device |
US17/524,122 US11580912B2 (en) | 2016-07-05 | 2021-11-11 | Display device |
US18/155,336 US11935487B2 (en) | 2016-07-05 | 2023-01-17 | Substrate assembly |
Applications Claiming Priority (4)
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US201662358177P | 2016-07-05 | 2016-07-05 | |
US62/358,177 | 2016-07-05 | ||
US201662371252P | 2016-08-05 | 2016-08-05 | |
US62/371,252 | 2016-08-05 |
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