CN107576633B - Method for detecting internal defects of optical element by using improved 3PIE technology - Google Patents
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Abstract
The invention discloses a method for detecting internal defects of an optical element by using an improved 3PIE technology, which comprises the steps of firstly, assuming that all internal defects are distributed on the rear surface of the optical element, calculating the complex amplitude distribution of each defect on the rear surface of the optical element by using a traditional laminated diffraction imaging algorithm, determining the axial position of each defect by using an automatic focusing algorithm according to each defect, then determining an axial slice of a three-dimensional laminated diffraction algorithm according to the position of each defect, and finally restoring the amplitude and the phase of the internal defects. The invention can obtain the information of the position, the size and the like of the defect, has simple structure, is suitable for the detection of the large-caliber optical element and has high detection efficiency.
Description
Technical Field
The invention belongs to the field of defect detection, and particularly relates to a method for detecting internal defects of an optical element by using an improved three-dimensional stacked diffraction imaging technology (3 PIE).
Background
Sparse defects in optical materials can significantly affect the performance of optical components in high precision optical systems, resulting in poor signal quality or severe measurement errors, especially in high power laser applications, which can cause the concentration of irregular high energy light, thereby severely affecting the laser damage threshold of the optical system. In the selection, processing and application processes of actual materials, internal defects such as bubbles, subsurface damage and laser damage are important factors influencing the performance of optical elements. In order to reduce or avoid the effects of internal defects and increase the useful life of the optical component, information about the internal defects, such as their location, shape and size, must be obtained for further evaluation.
Existing methods for defect assessment can be divided into two categories, destructive and non-destructive. Among the non-destructive types, optical non-contact measurement is a typical method of defect detection. Total Internal Reflection Microscopy (TIRM) can be used to obtain end-face images of surface damage, but because TIRM has no depth resolving power, the depth of the defect cannot be obtained. Cross-sectional images of the defect can be obtained using optical coherence tomography. However, its lateral resolution is not high and very small defects cannot be detected. Confocal scanning microscopes have higher lateral resolution, but their smaller depth of field and working distance limit the observation of subsurface defects. The surface defect detection system based on microscopic scattering imaging can quantitatively estimate the defect of a plane optical component smaller than 0.5 μm in the range of 800 x 800mm, but cannot obtain the amplitude and phase information of the defect. Digital Holographic Microscopy (DHM) can measure holograms of light fields scattered from defects to determine amplitude and phase information of defects, but these methods necessitate complex measurement systems, which are complicated and cumbersome in the measurement process. M. Maiden in Ptychographic transmission microscopy in three dimensions using a multi-slice propach (Opt. Soc.29(8), 1606-1614,2012) proposes a method that can recover three dimensional information inside a sample, but as the thickness of the sample increases, a large amount of scanning aperture illumination and iteration times are often required in the stacking algorithm.
CN 104406988 discloses a method for detecting internal defects of glass, which uses line structured light to detect the position and shape of internal defects of glass, but cannot obtain information such as the phase thereof.
Disclosure of Invention
The invention aims to provide a method for detecting internal defects of an optical element by using an improved 3PIE technology, which can reduce the iteration times of an algorithm, simplify a test light path and simultaneously obtain information such as the position, the amplitude, the phase and the like of the internal defects.
The technical solution for realizing the purpose of the invention is as follows: a method for detecting internal defects of an optical element by using an improved 3PIE technique, the method comprising the steps of:
step one, building a detection light path:
the detection light path comprises a diaphragm, a lens, a sample to be detected, a CCD and a two-dimensional translation platform, wherein the diaphragm, the lens, the sample to be detected and the CCD are arranged in sequence on a common optical axisThe two-dimensional translation table clamps a sample to be detected; collimated light is focused by a lens after passing through a diaphragm, forms divergent spherical waves after passing through the focal point of the lens, and reaches the target surface of the CCD after penetrating through a sample to be measured, wherein the distance between the diaphragm and the lens is Z1The distance between the lens and the sample to be measured is Z2The distance between the sample to be measured and the CCD is Z3The thickness of the sample to be measured is d; turning to the step two;
collecting images, and using a CCD to record intensity images corresponding to each scanning position in sequence:
moving a two-dimensional translation table, translating a sample to be detected in a plane vertical to an optical axis in a laminated scanning mode, and sequentially recording intensity images corresponding to all scanning positions by using a CCD (charge coupled device); turning to the third step;
step three, calculating an emergent light field of the rear surface of the sample to be detected:
giving an initial random guess of O to the sample to be tested0(r) the illuminating light is P0(r), complex amplitude psi of light field emitted from rear surface of sample to be measuredn(r)：
ψn(r)＝Pn(r)·On(r)
Where n is the number of iterations, calculating psin(r) complex amplitude psi propagating to the CCD target surface via Fresnel diffractionn(u) is:
wherein θ (u) represents ψn(u) the phase of the (u),
expressing Fresnel diffraction propagation between the sample to be detected and the CCD;
the complex amplitude psi obtained by replacing and transforming the light intensity actually collected by the CCDnThe amplitude information in (u) is updated to obtain the complex amplitude ψ 'with the phase portion kept unchanged'n(u)：
The updated complex amplitude psi'n(u) reverse transport back to the back surface of the sample to be tested:
updating the object function O separatelyn+1(r) and an illuminating light field Pn+1(r); turning to the step four;
step four, removing the phase position of the thickness superposition of the sample to be detected:
collecting diffraction patterns I (u) of the CCD target surface when the same sample to be detected is not defective, and updating the updated illumination light field Pn+1(r) transmitting to target surface of CCD to obtain updated illuminating light field Pn+1(r) Complex amplitude Φ at CCD target surfacen+1(u)：
Using I (u) to phin+1(u) strength limiting:
and inversely transmitting the limited complex amplitude phi' (u) distribution to the back surface of the sample to be measured as a new illumination light field:
returning to the step three until the recovered light field information is converged, and obtaining the complex amplitude distribution O (r) of the internal defect with the thickness superposition phase removed on the rear surface of the sample to be detected; turning to the fifth step;
step five, determining the axial position of each defect:
determining the distribution range of the defects in the sample to be tested as [ d ]i，du]And (3) transmitting the complex amplitude O (r) of each defect obtained in the fourth step on the back surface in a step-by-step mode by using deltad, and calculating the Tamura coefficient of each position:
the position d with the maximum Tamura coefficient is obtainedcThat is, the defect position, σ (I) represents the standard deviation of the gray level of the light intensity distribution at the position, m (I) represents the average value of the gray level of the light intensity distribution at the position, and norm represents the normalization function; turning to the step six;
step six, layering the sample to be tested:
calculating the internal defect position d according to the fifth stepc＝[dc，1，dc，2，……，dc，N]Determining the position d of the layer of the sample to be measuredc，i(i ═ 1,2, …, N), using the complex amplitude distribution of internal defects at the back surface of the sample to be tested as an initial guess Od(r)=[Odc，1(r)，Odc，2(r)，…，Odc，N(r)，]Wherein N is the number of internal defects; turning to the seventh step;
step seven, calculating the emergent light field of the internal defect of the sample to be detected in a layered mode:
multiplying the complex amplitude of the first layer in the sixth step by the illumination light to obtain an emergent light field psi of the first layere,1(r)：
ψe,1(r)＝P(r)·Odc,1(r)
Transmitting the emergent light field of the first layer to the second layer to obtain the incident light field psi of the second layeri,2(r)：
Wherein Δ dn＝dc,n+1-dc,nAnd will phii,2(r) complex amplitude of internal defect O with the second layerdc,2(r) multiplying, continuing to propagate to the third layer as illumination light for the third layer; by analogy, the emergent light field psi of the last layer is obtainede,N(r); turning to the step eight;
step eight, recovering the complex amplitude of the internal defects of the sample to be detected in a layering manner:
psi obtained from the seventh stepe,N(r) transmitting to the CCD target surface to obtain the complex amplitude of the internal defect on the CCD target surface
By the collected light intensity Ij(u) replacing the real part, and transmitting back to the Nth layer to obtain the complex amplitude psi 'emitted from the Nth layer'e,N(r)：
Updated to obtain updated illumination light ψ'i,N(r) and updated internal defect complex amplitude O'dc,N(r) after, will psi'i,N(r) reverse transport back to layer N-1 and so on to layer one gets P '(r) and O'dc,1(r)；
Returning to the step seven, let Odc,n(r)＝O′dc,n(r), P (r) ═ P' (r), until the result converges, and finally the complex amplitude distribution of the internal defects is obtained.
Compared with the prior art, the invention has the remarkable advantages that:
(1) the position and the shape of the internal defect can be obtained, the information such as the amplitude, the phase and the like can be obtained, a complex microscopic imaging device is not needed, the light path is simple, and a large-caliber optical element can be detected; (2) the sample to be detected is layered in advance according to the calculated internal defect position, so that the iteration step number is small, the convergence speed is high, and the detection efficiency is high; (3) the phase of the object is transferred to the illumination light through the limitation of the intensity of the illumination light, so that the phase influence of the superposition of the thickness of the object can be removed, and the contrast of the measurement result is enhanced.
Drawings
FIG. 1 is a flow chart of a method of detecting internal defects in an optical element using the modified 3PIE technique of the present invention.
FIG. 2 is a schematic diagram of a detection light path according to the present invention.
FIG. 3(a) is the phase distribution of the back surface of the sample to be measured in the example.
FIG. 3(b) shows the surface intensity and phase of a defect in the sample under test in the example.
FIG. 3(c) shows the surface intensity and phase of another defect in the sample under test in the embodiment.
Detailed Description
The present invention is described in further detail below with reference to the attached drawing figures.
With reference to fig. 1 and 2, a method for detecting internal defects of an optical element by using a modified 3PIE technique can obtain information of the position, shape, amplitude, phase, etc. of the defects, and comprises the following steps:
step one, building a detection light path:
the detection light path comprises a diaphragm 1, a lens 2, a sample 4 to be detected and a CCD 5 which are arranged in sequence along a common optical axis, and further comprises a two-dimensional translation table 3, wherein the two-dimensional translation table 3 clamps the sample 4 to be detected; collimated light is focused by a lens 2 after passing through a diaphragm 1, forms divergent spherical waves after passing through the focal point of the lens, and reaches the target surface of a CCD 5 after passing through a sample 4 to be measured, wherein the distance between the diaphragm 1 and the lens 2 is Z1The distance between the lens 2 and the sample 4 is Z2The distance between the sample 4 to be measured and the CCD 5 is Z3The thickness of the sample 4 to be measured is d; turning to the step two;
collecting images, and sequentially recording intensity images corresponding to all scanning positions by using a CCD 5:
moving the two-dimensional translation table 3, translating the sample 4 to be measured in a plane vertical to the optical axis in a laminated scanning mode, and sequentially recording intensity images corresponding to all scanning positions by using a CCD 5; turning to the third step;
step three, calculating an emergent light field of the rear surface of the sample 4 to be detected:
giving the sample 4 to be tested an initial random guess as O0(r) the illuminating light is P0(r), complex amplitude psi of light field emitted from back surface of sample (4) to be measuredn(r)：
ψn(r)＝Pn(r)·On(r)
Where n is the number of iterations, calculating psin(r) complex amplitude psi propagating to CCD 5 target surface via Fresnel diffractionn(u) is:
wherein θ (u) represents ψn(u) the phase of the (u),
expressing Fresnel diffraction propagation between the sample 4 to be detected and the CCD 5;
the complex amplitude psi obtained by replacing and transforming the light intensity I (u) actually collected by the CCD 5nThe amplitude information in (u) is updated to obtain the complex amplitude ψ 'with the phase portion kept unchanged'n(u)：
The updated complex amplitude psi'n(u) reverse transmission back to the rear surface of the sample 4 to be measured:
updating the object function O separatelyn+1(r) and an illuminating light field Pn+1(r); turning to the step four;
step four, removing the phase position of the thickness superposition of the sample 4 to be detected:
collecting the diffraction pattern I (u) of the target surface of the CCD 5 when the same sample 4 to be detected is not defective, and updating the updated illumination light field Pn+1(r) transmitting to target surface of CCD 5 to obtain updated illumination light field Pn+1(r) Complex amplitude Phi at CCD 5 target surfacen+1(u)：
Using I (u) to phin+1(u) strength limiting:
and inversely transmitting the limited complex amplitude phi' (u) distribution to the back surface of the sample 4 to be measured as a new illumination light field:
returning to the step three until the recovered light field information is converged, and obtaining the complex amplitude distribution O (r) of the internal defect with the thickness superposition phase removed on the rear surface of the sample 4 to be detected; turning to the fifth step;
step five, determining the axial position of each defect:
determining the distribution range of the defects in the sample 4 to be tested as dl，du]And (3) transmitting the complex amplitude O (r) of each defect obtained in the fourth step on the back surface in a step-by-step mode by using deltad, and calculating the Tamura coefficient of each position:
the position d with the maximum Tamura coefficient is obtainedcNamely the position of the defect; σ (I) represents a standard deviation of gray levels of the light intensity distribution at the position, m (I) represents an average value of gray levels of the light intensity distribution at the position, and norm represents a normalization function; turning to the step six;
step six, layering a sample 4 to be detected:
calculating the internal defect position d according to the fifth stepc＝[dc，1，dc，2，……，dc，N]Determining the layer position d of the sample 4 to be measuredc，i(i ═ 1,2, …, N), the complex amplitude distribution of internal defects at the rear surface of the sample 4 to be measured was used as an initial guess Od(r)＝[Odc，1(r)，Odc，2(r)，…，Odc，N(r)，]Wherein N is the number of internal defects; turning to the seventh step;
step seven, calculating the emergent light field of the internal defect of the sample to be detected 4 in a layered mode:
multiplying the complex amplitude of the first layer in the sixth step by the illumination light to obtain an emergent light field psi of the first layere,1(r)：
ψe,1(r)＝P(r)·Odc,1(r)
Transmitting the emergent light field of the first layer to the second layer to obtain the incident light field psi of the second layeri,2(r)：
Wherein Δ dn＝dc,n+1-dc,nAnd will phii,2(r) complex amplitude of internal defect O with the second layerdc,2(r) multiplying, continuing to propagate to the third layer as illumination light for the third layer; by analogy, the emergent light field psi of the last layer is obtainede,N(r); turning to the step eight;
step eight, recovering the complex amplitude of the internal defect of the sample to be detected 4 in a layering manner:
psi obtained from the seventh stepe,N(r) transmitting to CCD 5 target surface to obtain complex amplitude of internal defect on CCD 5 target surface
By the collected light intensity Ij(u) replacing the real part, and transmitting back to the Nth layer to obtain the complex amplitude psi 'emitted from the Nth layer'e,N(r)：
Updated to obtain updated illumination light ψ'i,N(r) and updated internal defect complex amplitude O'dc,N(r) after, will psi'i,N(r) reverse transport back to layer N-1 and so on to layer one gets P '(r) and O'dc,1(r)；
Returning to the step seven, let Odc,n(r)＝O′dc,n(r), P (r) ═ P' (r), until the result converges, and finally the complex amplitude distribution of the internal defects is obtained.
In the second step, the stacked scanning method refers to a stacked scanning method, which is to scan the sample 4 to be measured in a serpentine manner in the object plane by using the two-dimensional translation stage 3, and ensure that a certain overlapping rate exists in the area of the sample 4 to be measured illuminated by the light beam between adjacent translation positions. The measurement of the large-aperture optical element can be realized by controlling the scanning steps and the overlapping rate. In the fourth step, the illumination field is subjected to intensity limitation by using the diffraction pattern of the sample 4 to be detected without defects, and the phase influence caused by the thickness of the sample 4 to be detected is transferred to the illumination field, so that the contrast is enhanced. In the fifth step, the precise axial position of each internal defect is obtained by calculating Tamura coefficients at different positions. In the sixth step, the layering is carried out according to the axial position of the internal defect obtained in advance in the fifth step, so that the layering quantity is reduced, and the calculation efficiency is improved.
FIG. 3(a) is a phase distribution of the back surface of a sample with internal defects recovered by the method, in which two internal defects of different depths are enclosed in a solid line and a dotted line, respectively. Fig. 3(b) and 3(c) are intensity and phase distributions of two internal defects at respective positions within solid-line and dashed-line frames, respectively, with depths of 0.01mm and 0.002mm, respectively. The images in fig. 3(b) and 3(c) show the shape, amplitude, phase, etc. information of the internal defect more clearly than the restored image of the back surface.
In summary, the present invention determines the axial position of the internal defect of the optical element by the auto-focusing method, and performs the layered recovery on the sample to be tested based on the axial position to obtain the amplitude and phase information of the internal defect. Compared with the traditional three-dimensional laminated diffraction imaging method, the method shortens the calculation time and improves the detection efficiency.
Claims (4)
1. A method for detecting internal defects in an optical element using a modified 3PIE technique, the method comprising the steps of:
step one, building a detection light path:
the detection light path comprises a diaphragm (1), a lens (2), a sample to be detected (4) and a CCD (5) which are arranged in sequence along a common optical axis, and further comprises a two-dimensional translation table (3), wherein the two-dimensional translation table (3) clamps the sample to be detected (4); collimated light is focused by the lens (2) after passing through the diaphragm (1), forms divergent spherical waves through the focal point of the lens, and reaches the target surface of the CCD (5) after penetrating through the sample to be measured (4), wherein the distance between the diaphragm (1) and the lens (2) is Z1The distance between the lens (2) and the sample (4) to be measured is Z2The distance between the sample (4) to be measured and the CCD (5) is Z3The thickness of the sample (4) to be detected is d; turning to the step two;
secondly, collecting images, and using a CCD (5) to record intensity images corresponding to each scanning position in sequence:
moving a two-dimensional translation table (3), translating a sample (4) to be measured in a plane vertical to an optical axis in a laminated scanning mode, and sequentially recording intensity images corresponding to all scanning positions by using a CCD (5); turning to the third step;
step three, calculating an emergent light field of the rear surface of the sample (4) to be detected:
giving the sample (4) to be tested an initial random guess as O0(r) the illuminating light is P0(r), complex amplitude psi of light field emitted from back surface of sample (4) to be measuredn(r)：
ψn(r)＝Pn(r)·On(r)
Where n is the number of iterations, calculating psin(r) complex amplitude psi propagating to CCD (5) target surface via Fresnel diffractionn(u) is:
wherein θ (u) represents ψn(u) the phase of the (u),
representing Fresnel diffraction propagation between the sample (4) to be measured and the CCD (5);
the complex amplitude psi obtained by replacing and transforming the light intensity I (u) actually collected by the CCD (5)nThe amplitude information in (u) is updated to obtain the complex amplitude ψ 'with the phase portion kept unchanged'n(u)：
The updated complex amplitude psi'n(u) reverse transmission back to the rear surface of the sample (4) to be measured:
updating the object function O separatelyn+1(r) and an illuminating light field Pn+1(r); turning to the step four;
step four, removing the phase position of the thickness superposition of the sample (4) to be detected:
collecting the diffraction pattern I (u) of the target surface of the CCD (5) when the same sample (4) to be detected is not defective, and updating the updated illumination light field Pn+1(r) transmitting to the target surface of CCD (5) to obtain updated illuminating light field Pn+1(r) Complex amplitude Phi at CCD (5) target surfacen+1(u)：
Using I (u) to phin+1(u) strength limiting:
and inversely transmitting the limited complex amplitude phi' (u) distribution to the back surface of the sample to be measured (4) as a new illumination light field:
returning to the step three until the recovered light field information is converged, and obtaining the complex amplitude distribution O (r) of the internal defect with the thickness superposition phase removed on the rear surface of the sample (4) to be detected; turning to the fifth step;
step five, determining the axial position of each defect:
determining the distribution range of the defects in the sample (4) to be tested as [ d ]l，du]And (3) transmitting the complex amplitude O (r) of each defect obtained in the fourth step on the back surface in a step-by-step mode by using deltad, and calculating the Tamura coefficient of each position:
the position d with the maximum Tamura coefficient is obtainedcThat is, the defect position, σ (I) represents the standard deviation of the gray level of the light intensity distribution at the position, m (I) represents the average value of the gray level of the light intensity distribution at the position, and norm represents the normalization function; turning to the step six;
step six, layering a sample to be detected (4):
calculating the internal defect position d according to the fifth stepc＝[dc，1，dc，2，......，dc，N]Determining the layer position d of the sample (4) to be measuredc，iWherein i is 1,2, N, which represents the number of the layered position of the sample to be tested, i is a natural number, and the complex amplitude distribution of the internal defect on the rear surface of the sample to be tested (4) is used as an initial guess Od(r)＝[Odc，1(r)，Odc，2(r)，...，Odc，N(r)，]Wherein N is the number of internal defects; turning to the seventh step;
step seven, calculating the emergent light field of the internal defect of the sample (4) to be detected in a layered mode:
multiplying the complex amplitude of the first layer in the sixth step by the illumination light to obtain an emergent light field psi of the first layere，1(r)：
ψe，1(r)＝P(r)·Odc，1(r)
Transmitting the emergent light field of the first layer to the second layer to obtain the incident light field psi of the second layeri，2(r)：
Wherein Δ d1＝dc，2-dc，1Is the thickness of the first layer and will be psii，2(r) complex amplitude of internal defect O with the second layerdc，2(r) multiplying, continuing to propagate to the third layer as illumination light for the third layer; by analogy, the incident light field psi of the n-th layeri，n(r) is:
Δdn＝dc，n+1-dc，nis the thickness of the (n-1) th layer to finally obtain the emergent light field psi of the last layere，N(r); turning to the step eight;
step eight, recovering the internal defect complex amplitude of the sample (4) to be detected in a layering manner:
psi obtained from the seventh stepe，N(r) is transmitted to the CCD (5) target surface to obtain the complex amplitude of the internal defect on the CCD (5) target surface
By the collected light intensity Ij(u) replacing the real part, and transmitting back to the Nth layer to obtain the complex amplitude psi 'emitted from the Nth layer'e，N(r)：
Updated to obtain updated illumination light ψ'i，N(r) and updated internal defect complex amplitude O'dc，N(r) after, will psi'i，N(r) reverse transport back to layer N-1 and so on to layer one gets P '(r) and O'dc，1(r)；
Returning to the step seven, let Odc，n(r)＝O′dc，n(r), P (r) ═ P' (r), until the result converges, and finally the complex amplitude distribution of the internal defects is obtained.
2. The method for detecting internal defects of an optical element using the modified 3PIE technique of claim 1, wherein: in the second step, the stacked scanning mode refers to that the two-dimensional translation stage (3) is used for performing snake-shaped scanning on the sample (4) to be measured in a plane perpendicular to the optical axis, a certain overlapping rate is ensured to exist in an area, illuminated by the light beam, of the sample (4) to be measured between adjacent translation positions, and the measurement of the large-aperture optical element can be realized by controlling the scanning steps and the overlapping rate.
3. The method for detecting internal defects of an optical element using the modified 3PIE technique of claim 1, wherein: in the fourth step, the diffraction pattern of the defect-free sample (4) to be detected is used for limiting the intensity of the illumination field, and the phase influence caused by the thickness of the sample (4) to be detected is transferred to the illumination field, so that the contrast is enhanced.
4. The method for detecting internal defects of an optical element using the modified 3PIE technique of claim 1, wherein: in the fifth step, the precise axial position of each internal defect is obtained by calculating Tamura coefficients at different positions.
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