CN107574427A - Apparatus and method for chemical vapor deposition processes - Google Patents
Apparatus and method for chemical vapor deposition processes Download PDFInfo
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- CN107574427A CN107574427A CN201710824600.3A CN201710824600A CN107574427A CN 107574427 A CN107574427 A CN 107574427A CN 201710824600 A CN201710824600 A CN 201710824600A CN 107574427 A CN107574427 A CN 107574427A
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Abstract
The invention discloses the apparatus and method for chemical vapor deposition processes.A kind of device for chemical vapor deposition processes, including：Sensor, it is configured to sense technological parameter in the chemical vapor deposition processes；Database, it is configured to store the technological parameter related to the chemical vapor deposition processes and corresponding film characteristics；And processing unit, film characteristics corresponding with the technological parameter of sensing in desired value and database according to film characteristics are configured to, determine the adjusted value of the technological parameter in the chemical vapor deposition processes.
Description
Technical field
This disclosure relates to the apparatus and method for chemical vapor deposition processes.
Background technology
In semiconductor process technique, widely used chemical vapor deposition (CVD) technique is as main film preparation work
Skill forms deielectric-coating.
In existing CVD technology, before film preparation is started, people preset the process conditions of CVD techniques.Opening
After beginning CVD reactions, film preparation is carried out according to process conditions set in advance.
The content of the invention
The present disclosure proposes a kind of new apparatus and method for chemical vapor deposition processes.
According to an aspect of this disclosure, there is provided a kind of device for chemical vapor deposition processes, including：Sensing
Device, it is configured to sense technological parameter in the chemical vapor deposition processes；Database, it is configured to store and the chemistry
The related technological parameter of vapor deposition processes and corresponding film characteristics；And processing unit, it is configured to special according to film
Film characteristics corresponding with the technological parameter of sensing in the desired value and database of property, determine the chemical vapor deposition processes
In the technological parameter adjusted value.
According to another aspect of the disclosure, there is provided a kind of method for chemical vapor deposition processes, including：Institute
State and technological parameter is sensed in chemical vapor deposition processes；According to the technique in the desired value of film characteristics and database with sensing
Film characteristics corresponding to parameter, the adjusted value of the technological parameter in the chemical vapor deposition processes is determined, wherein, it is described
Database purchase has the technological parameter related to the chemical vapor deposition processes and corresponding film characteristics.
Using the apparatus and method for chemical vapor deposition processes of the disclosure, chemical vapor deposition processes can be monitored
In various technological parameters change, and technological parameter is adjusted according to the change of technological parameter, ensures to be prepared
Film characteristics stabilization, so as to reduce the product rejection caused by film characteristics deviation.
Brief description of the drawings
The accompanying drawing of a part for constitution instruction describes embodiment of the disclosure, and is used to solve together with the description
Release the principle of the disclosure.
Referring to the drawings, according to following detailed description, the disclosure can be more clearly understood, wherein：
Fig. 1 shows a kind of construction of chemical vapor deposition unit.
Fig. 2 shows the construction of the chemical vapor deposition unit of one embodiment according to the disclosure.
Fig. 3 shows the flow chart of the chemical vapor deposition treatment method of one embodiment according to the disclosure.
Fig. 4 shows a part for the database of one embodiment according to the disclosure.
Fig. 5 shows the diagram of the construction example of computer.
Pay attention to, in embodiments described below, be used in conjunction with same reference between different accompanying drawings sometimes
Come the part for representing same section or there is identical function, and omit its repeat specification.In this manual, using similar mark
Number and letter represent similar terms, therefore, once be defined in a certain Xiang Yi accompanying drawing, then in subsequent accompanying drawing do not need pair
It is further discussed.
In order to make it easy to understand, position, size and scope of each structure shown in accompanying drawing etc. etc. does not indicate that reality sometimes
Position, size and scope etc..Therefore, disclosed invention is not limited to position, size and scope disclosed in accompanying drawing etc. etc..
Embodiment
The various exemplary embodiments of the disclosure are described in detail now with reference to accompanying drawing.It should be noted that：Unless have in addition
Body illustrates that the unlimited system of part and the positioned opposite of step, numerical expression and the numerical value otherwise illustrated in these embodiments is originally
Scope of disclosure.
The description only actually at least one exemplary embodiment is illustrative to be never used as to the disclosure below
And its application or any restrictions that use.
It may be not discussed in detail for technology, method and apparatus known to person of ordinary skill in the relevant, but suitable
In the case of, the technology, method and apparatus should be considered as authorizing part for specification.
In shown here and discussion all examples, any occurrence should be construed as merely exemplary, without
It is as limitation.Therefore, the other examples of exemplary embodiment can have different values.
Fig. 1 shows a kind of schematic diagram of the structure of chemical vapor deposition unit.As shown in figure 1, the chemical vapor deposition
Device is a kind of exemplary radio frequency plasma enhancing chemical vapor deposition unit, such as can include radio frequency (RF) generator
101st, gas source 102, reative cell 103, Top electrode 104, bottom electrode 106, heater 110, pressure controller 108 and pump 109.
In Fig. 1 exemplary chemical vapor deposition unit, radio-frequency signal generator 101, which is used to provide to Top electrode 104, to be penetrated
Frequency voltage.Gas source 102 is used to provide reacting gas and carrier gas to reaction zone 107.Gas source 102 can be provided with one or more
Individual flow controller (not shown), for controlling the flow of each gas.Radio-frequency signal generator 101 is electrically connected to Top electrode 104, from
And the radio-frequency voltage of high frequency and/or low frequency is provided to Top electrode 104.Bottom electrode 106 is grounded GND, so, in the He of Top electrode 104
Rf electric field is produced in reaction zone 107 between bottom electrode 106.Heater 110 is used to heat for reative cell 103, so as to control
The temperature of reaction zone 107.Pump 109 is fluidly connected to reative cell 103 by pressure controller 108.Can using pressure controller 108
To control the air pressure in reative cell 103.
The illustrative steps that film is prepared using the chemical vapor deposition unit shown in Fig. 1 are as follows.
(1) device for needing to prepare film is placed in reaction zone 107.The device can for example need to prepare film
Substrate (such as substrate of semiconductor devices) 105 etc..
(2) reative cell 103 is vacuumized by pump 109.In order to reach the vacuum needed for film preparation, can use various
The combination of pump or various pumps.For example, pump 109 can include mechanical pump, molecular pump or ionic pump, or its various combination.For example,
In use, the air pressure in reative cell 103 can be made to be reduced to such as 0.1Pa first by mechanical pump, molecular pump is then turned on, is made
Pressure of bringing about the desired sensation is further decreased to such as 0.01Pa, finally opens ionic pump, air pressure is eventually declined to such as 10-4Pa。
(3) gas source 102 is input to reacting gas and carrier gas in reaction zone 107.Opening pressure controller 108 so that
Stable gas pressure in reative cell 103 is in predetermined value.
(4) heater 110, the temperature of reaction zone 107 is controlled for example, by controlling the power of heater 110.
(5) radio-frequency signal generator 101 is opened, radio-frequency voltage is provided to Top electrode 104, so as in Top electrode 104 and bottom electrode
Rf electric field is formed between 106.Reactant gas molecules in reaction zone 107 are accelerated and touched in the presence of rf electric field
Hit so that molecule is dissociated into ionic group in collision process.These groups react on the surface of substrate 105 and deposit shape
Into film.
For example, in one exemplary embodiment, silica (SiO is prepared on the surface of silicon substrate2) film, reaction gas
Body can use silane (SiH4, flow is about 20sccm) and oxygen (O2, flow is about 50sccm), carrier gas uses such as helium
(He, flow are about 100sccm).The frequency of radiofrequency signal caused by radio-frequency signal generator is about 13.56MHz, radiofrequency signal
Power is about 600W.The temperature of reaction zone 107 is about 850 DEG C.Air pressure in reative cell 103 is maintained at about 1Pa.Processing
Time is 15 minutes.The SiO finally given2The thickness of film is about 2 μm.
Inventors noted that in superincumbent CVD film preparation process, although having preset process conditions, by
In various uncontrollable factors, frequently result in each process conditions and fluctuated in membrane-film preparation process.For example, reacting gas
O2Flow may drop to 40sccm from predetermined 50sccm, and be gradually restored to 50sccm after 30 seconds.At this
In the case of kind, due to the fluctuation of reaction gas flow, cause the SiO finally prepared2The characteristic of film is affected, such as originally
Wish to prepare the SiO that thickness is 2 μm2Film, and the film thickness finally given is 1.9 μm.
Based on understanding above, the present disclosure proposes a kind of new apparatus and method for chemical vapor deposition processes.
Fig. 2 shows the schematic diagram of the chemical vapor deposition unit of one embodiment according to the disclosure.
As shown in Fig. 2 the chemical vapor deposition unit for example may include radio frequency (RF) generator 201, gas source 202, anti-
Answer room 203, Top electrode 204, bottom electrode 206, heater 210, pressure controller 208 and pump 209.Shown in these equipment and Fig. 1
Chemical vapor deposition unit in corresponding device it is similar, be just not repeated herein.Fig. 2 chemical vapor deposition dress is described below
Put the difference between Fig. 1 chemical vapor deposition unit.
As shown in Fig. 2 chemical vapor deposition unit also includes：Database 215, processing unit 216, sensor 211-214.
Sensor 211-214 is used to sense technological parameter in chemical vapor deposition processes.Technological parameter mentioned here refers to can be with
Control and the various parameters for influenceing chemical vapor deposition processes, such as, but not limited to gas flow, reaction chamber temperature, reative cell gas
Pressure, radio-frequency power etc..
In one exemplary embodiment, sensor 211 can be flow sensor, be provided for sense gasses source 202
Gas flow.For example, sensor 211 can be single sensor, for sensing the flow of one of reacting gas and carrier gas,
Or sensor 211 can include multiple sensors, can measure each reacting gas and the flow of carrier gas respectively.In addition, pass
Sensor 212 is power sensor, the power of the radiofrequency signal for measuring radio-frequency signal generator offer.Sensor 213 is air pressure transmission
Sensor, for measuring the air pressure in reative cell 203.Sensor 214 is temperature sensor, for measuring the temperature of reaction zone 207.
In fig. 2, each sensor 211-214 is shown as single sensor, but those skilled in the art should
Understand, these sensors can also be comprised in miscellaneous equipment.Such as sensor 211 can be disposed in gas source 202,
Sensor 212 can be disposed in radio-frequency signal generator 201.In addition, temperature sensor 214 except being arranged in down as shown in Figure 2
It in electrode 206, can also be directly arranged in reaction zone 207, or use non-contact type temperature measurement equipment, such as infrared survey
Warm instrument etc..
The technological parameter related to chemical vapor deposition processes and corresponding film characteristics are stored with database 215.
In database 215, the characteristic of film is associated with the technological parameter for preparing the film.According to a kind of embodiment, number
It can come from according to the technological parameter related to chemical vapor deposition processes and corresponding film characteristics that are stored in storehouse 215 same
The historical data for the same species chemical vapor deposition processes that platform chemical vapor deposition unit had previously performed.In addition, in database 215
The technological parameter related with chemical vapor deposition processes of storage and corresponding film characteristics can be from other it is identical or
The historical data for the same species chemical vapor deposition processes that similar chemical vapor deposition unit had previously performed.Can be specifically for
Build the database and perform chemical vapor deposition processes with a variety of technological parameters, and by technological parameter and caused
The corresponding film characteristics of film are recorded in database 215.Also will can be used in the real work of chemical vapor deposition unit
Technological parameter and the corresponding film characteristics of caused film be recorded in database 215.Can be in chemical vapor deposition
Device carries out updating the database 215 after one or many chemical vapor deposition processes, can also receive other identical or classes
As the technological parameter that is used in chemical vapor deposition processes of chemical vapor deposition unit and corresponding film characteristics update
The database 215.Also the example data stored in database 215 can be described in detail in conjunction with specific embodiments below.
Fig. 3 shows the flow chart of the chemical gaseous phase depositing process of one embodiment according to the disclosure.As shown in figure 3,
The chemical gaseous phase depositing process comprises the following steps：
Technological parameter (step 301) is sensed in the chemical vapor deposition processes；
According to film characteristics corresponding with the technological parameter of sensing, determinization in the desired value of film characteristics and database
Learn the adjusted value (step 302) of the technological parameter in vapor deposition processes.
By the above method, the chemical vapor deposition unit of the disclosure can be according to the adjusted value of identified technological parameter
Control the chemical vapor deposition processes.In the above method, the adjusted value of technological parameter represents will in chemical vapor deposition processes
The desired value of the technological parameter of use.Chemical vapor deposition unit can adjust technological parameter in chemical vapor deposition processes,
So that technological parameter is substantially equal to the adjusted value.
The mistake that above-mentioned chemical gaseous phase depositing process is carried out using Fig. 2 chemical vapor deposition unit is described more fully below
Journey.
Still with above-mentioned using silane (SiH4) and oxygen (O2) be used as reacting gas, helium (He) to prepare oxygen as carrier gas
SiClx (SiO2) carry out the method shown in diagrammatic illustration 3 exemplified by film.
First, the sensor 211-214 in chemical vapor deposition unit is sensed each during chemical vapor deposition
Running parameter (step 301).Such as the flow of silane, the flow of oxygen and helium are sensed respectively by multiple flow sensors 211
The flow of gas, radio-frequency power is sensed by radio-frequency power sensor 212, sensed by baroceptor 213 in reative cell 203
Air pressure, and the temperature by the sensing reaction zone 207 of temperature sensor 214.
Then, it is corresponding with the technological parameter of sensing in desired value and database of the processing unit 216 according to film characteristics
Film characteristics determine the adjusted value (step 302) of technological parameter.The desired value of film characteristics refers to wish to pass through chemical gas
The occurrence of the characteristic for the film that phase deposition process obtains.The desired value of film characteristics can be predetermined value, for example, by behaviour
Work person is input to before chemical vapor deposition processes in processing unit 216.In the present embodiment, film characteristics are SiO2Film
Thickness.It will be appreciated by those skilled in the art that film characteristics can also be other characteristics, for example, refractive index, absorption index and
Resistivity etc..
Fig. 4 shows the example of a part of data stored in database 215.As shown in figure 4, in the database 215, use
In preparation SiO2The technological parameter of the chemical vapor deposition processes of film includes SiH4Flow, O2Flow, He flows, radio-frequency power,
Reative cell air pressure, reaction chamber temperature.The characteristic of film is SiO2The thickness of film.Every group of technological parameter has corresponding thickness
Value.
According to these technological parameters and film thickness stored in the desired value of predetermined film characteristics and database 215
Data, it may be determined that the adjusted value of technological parameter.
Processing unit 216 can set technological parameter according to the adjusted value of technological parameter, so as to control chemical vapor deposition
Product process.
The exemplary mistake of the method for the adjusted value for determining technological parameter is described in detail with reference to the database shown in Fig. 4
Journey.
In one example, the technological parameter that processing unit 216 senses according to sensor 211-214 is in database 215
Search or similar technological parameter equal with the technological parameter of sensing, by database with described equal or similar technological parameter
Corresponding film characteristics are as film characteristics corresponding with the technological parameter of sensing.
For example, the desired value of film characteristics predetermined in processing unit 216, which is thickness, is equal to 2 μm.In chemical vapor deposition
During, processing unit 216 receives the sensing data of sensor 211-214 transmissions.For example, what sensor 211-214 was sent
Sensing data shows, SiH4Flow be 20sccm, O2Flow be 50sccm, He flow is 100sccm, radio-frequency power
500W, the air pressure in reative cell are 1.0Pa, and the temperature in reative cell is 850 DEG C.Then processing unit 216 senses according to these
The value searching data storehouse 215 of technological parameter, the technological parameter in the 3rd group of data for determining to store in Fig. 4 database 215 are equal to
The technological parameter sensed.In addition, (it is corresponding thin in the 3rd group in this example by film thickness corresponding to the technological parameter of sensing
Film thickness) compared with the desired value of film characteristics.It was found that corresponding film thickness is equal to film characteristics in the 3rd group
Desired value, that is, be 2.0 μm.Therefore, processing unit 216 determines technological parameter without adjustment, as long as keeping current work
Skill parameter constant, it becomes possible to obtain the SiO that thickness is 2.0 μm2Film.
In addition, if by it is above-mentioned it was found that film characteristics corresponding to the technological parameter sensed in preparation process not
Equal to the desired value of predetermined film characteristics, then processing unit 216 can determine this such as according to the data stored in database 215
What adjusting process parameter.For example, when preparing the film that desired value is 2 μ m thicks in the examples described above, O2Flow fluctuate,
Such as it is reduced to 40sccm from 50sccm.When sensor 211 detects O2Flow when being reduced to 40sccm, processing unit 216
According to the technological parameter searching data storehouse 215 newly sensed, it can interpolate that current technological parameter is equal to the in database 215
2 groups of technological parameters.According to pair between technological parameter in database and corresponding film characteristics (being the thickness of film in this)
It should be related to, if according to the 2nd group of technological parameter i.e. in O2Flow be 40sccm under conditions of carry out chemical vapor deposition processes,
The film thickness then finally given will be 1.5 μm.In this case, processing unit 216 judges to need adjusting process parameter to come really
It is 2 μm to protect the film thickness being finally prepared.
In order to determine the adjusted value of technological parameter (that is, in order to determine what kind of target by current process parameter adjustment be
Value), in the case where film characteristics corresponding with the technological parameter of sensing are less than the desired value of film characteristics, select database
Technological parameter corresponding with the film characteristics of the desired value more than film characteristics, the adjusted value as technological parameter in 215.
For example, for current example, the film thickness of the 4th group of-the 6 group of data record in database 215 is both greater than
Desired value (2 μm).Therefore, processing unit 216 selects one group of technological parameter in the 4th group of-the 6 group of data, as technological parameter
Adjusted value.Such as the 4th group of technological parameter may be selected.So, follow-up chemical vapor deposition processes are according to the 4th group of technological parameter
Carry out, certain compensation can be carried out to the thickness of film so that the SiO finally given2The thickness of film can be desired value 2
μm or at least reduce deviation from 2 μm of desired value.
In addition, in certain embodiments, when the 4th group of-the 6 group of data in database 215 select, Ke Yigen
Under type is selected according to this：
So that film characteristics corresponding with the technological parameter of sensing are the same as the difference between the desired value of film characteristics in database
It is substantially equal to the desired value of film characteristics with the difference between film characteristics corresponding with the adjusted value of technological parameter in database.
In other words, with the adjusted value of technological parameter corresponding to film characteristics target is deviateed with the direction opposite with the technological parameter of sensing
Value, and deviate the amplitude being substantially identical.In this way so that the adjusted value of technological parameter can compensate for the work of sensing
Film characteristics corresponding to skill parameter relative to the desired value of film characteristics deviation.According to a kind of embodiment, " A is substantially first-class
A and B difference is considered in the range of positive and negative the 33.3% of A in B ".
For example, in database 215, the 4th group of film thickness corresponding to technological parameter is 2.5 μm, and the 5th group of technological parameter is corresponding
Film thickness be 3 μm, the 6th group of film thickness corresponding to technological parameter is 3.5 μm.It it is 2 μm in the desired value of film thickness
In the case of, because the corresponding film thickness of technological parameter with sensing is 1.5 μm, so thin corresponding to the 4th group of technological parameter
(2.5 μm -2.0 μm=0.5 μm) of the difference of film thickness and desired value be equal to desired value with the technological parameter of sensing corresponding film
The difference (2.0 μm -1.5 μm=0.5 μm) of thickness.In the way of above-described embodiment, the 4th group of technological parameter may be selected as technique
The adjusted value of parameter.
Similarly, in order to determine the adjusted value of technological parameter, it is more than in film characteristics corresponding with the technological parameter of sensing
It is corresponding with the film characteristics of the desired value less than film characteristics in database in the case of the desired value of the film characteristics
Selected in technological parameter, the adjusted value as technological parameter.
If for example, SiO2The desired value of the thickness of film is 2.5 μm, the sensing data table that sensor 211-214 is provided
Bright, current SiH4Flow is 40sccm, O2Flow is 70sccm, and He flows are 150sccm, radio-frequency power 900W, reative cell
Air pressure 2.0Pa in 203,950 DEG C of the temperature of reative cell 203.So looked into according to the technological parameter sensed in database 215
Look for, can be determined according to the 5th group of data, film thickness corresponding with the technological parameter of sensing is 3.0 μm.The film thickness is more than
Desired value (2.5 μm).Therefore, processing unit 216 will select technological parameter in the 1st group of-the 3 group of data, as technological parameter
Adjusted value.
It can be selected according to the example similar mode with being less than desired value above：
So that film characteristics corresponding with the technological parameter of sensing are the same as the difference between the desired value of film characteristics in database
It is substantially equal to the desired value of film characteristics with the difference between film characteristics corresponding with the adjusted value of technological parameter in database.
For the present embodiment, film thickness corresponding with the technological parameter of sensing is the same as between the desired value of film thickness
Difference be 3 μm -2.5 μm=0.5 μm, in the 1st group of-the 3 group of data, the 3rd group of film thickness and target corresponding to technological parameter
The difference of value meets above-mentioned requirements, i.e., 2.5 μm -2 μm=0.5 μm.Therefore, the technological parameter in the 3rd group of data is selected as technique
The adjusted value of parameter.
In each example above, the technological parameter of sensing can find one group of essentially equal number in database 215
According to.But in many cases, the technological parameter of sensing can not find one group of essentially equal data in database.At this moment, locate
Reason device 216 can select in database with the technological parameter of sensing similar in one group of technological parameter.Here, the technique of " close "
Parameter represents that according to the film characteristics that two groups of technological parameters progress chemical vapor depositions obtain be probably approximate.In the disclosure
It can determine that two groups of technological parameters are " close " using various ways.
Following each embodiment describes the technological parameter in the technological parameter and database that how to determine sensing in detail
It is similar.
According in some embodiments of the present disclosure, processing unit 216 can calculate each group technological parameter in database 215
Relative to the variance of the technological parameter of the sensing from sensor, then select one group of minimum technological parameter of variance as with sense
Technological parameter similar in the technological parameter of survey.
If for example, sensing technological parameter in, SiH4Flow is 18sccm, O2Flow is 46sccm, and He flows are
130sccm, radio-frequency power 560W, reative cell air pressure are 1.1Pa, and reaction chamber temperature is 860 DEG C.Data can be then calculated respectively
The variance of technological parameter and the technological parameter of sensing in storehouse 215 in each group of data.Specific result of calculation is as follows.
1st group：
(20-18)2+(30-46)2+(100-130)2+(500-560)2
+(1-1.1)2+(850-860)2=4860.01
2nd group：
(20-18)2+(40-46)2+(100-130)2+(500-560)2
+(1-1.1)2+(850-860)2=4640.01
3rd group：
(20-18)2+(50-46)2+(100-130)2+(500-560)2
+(1-1.1)2+(850-860)2=4620.01
4th group：
(30-18)2+(50-46)2+(150-130)2+(700-560)2
+(2-1.1)2+(850-860)2=20260.81
5th group：
(40-18)2+(70-46)2+(150-130)2+(900-560)2
+(2-1.1)2+(950-860)2=125160.81
6th group：
(50-18)2+(80-46)2+(200-130)2+(1000-560)2
+(3-1.1)2+(650-860)2=244783.61
It can see according to the result of calculation of variance above, the 3rd group of side between technological parameter and the technological parameter of sensing
It is poor minimum, hence, it can be determined that the 3rd group of technological parameter is as technological parameter similar in the technological parameter with sensing.So as to, with
3rd group of film thickness corresponding to technological parameter is as film thickness corresponding with the technological parameter of sensing.
In addition, cause each technique as can be seen that because the numerical value difference of each technological parameter is huge from the examples above
The contribution of variance of the parameter for finally giving is different.For example, by taking the 4th group of technological parameter in database as an example, radio-frequency power it
Difference square considerably beyond other each technological parameters difference square.In this case, no matter flow and reative cell gas
How other technological parameters such as pressure change, and are all difficult to produce materially affect to final variance size.That is, no matter sense
Other technological parameters how, as long as the difference of radio-frequency power is larger, then the 4th group of technological parameter will not be selected as and sense
Technological parameter similar in technological parameter.
However, in the chemical deposition process of reality, even if radio-frequency power differs greatly sometimes, but as long as other techniques
Parameter is same or like, and the property of thin film of prepared film is also same or like.Therefore, in order to overcome drawbacks described above,
In some embodiments of the present disclosure, processing unit 216 can also first calculate the work of each group technological parameter and sensing in database
The ratio of the poor technological parameter relative to sensing of skill parameter, the quadratic sum of each ratio is then calculated again.
Still by taking the technological parameter for the sensing being illustrated above as an example, i.e. SiH4Flow is 18sccm, O2Flow is 46sccm,
He flows are 130sccm, and radio-frequency power 560W, reative cell air pressure is 1.1Pa, and reaction chamber temperature is 860 DEG C.
Processing unit 216 can be calculated as follows according to the 1st group of-the 6 group of technological parameter in database 215.
1st group：
2nd group：
3rd group：
4th group：
5th group：
6th group：
According to result of calculation above, one group of minimum technological parameter of quadratic sum can be selected to join as with the technique of sensing
Technological parameter similar in number, i.e. the 3rd group of technological parameter.
In addition, it for example can also first calculate the difference of each technological parameter and cause the unit change of film characteristics (for example, every
0.5 μm of film thickness) process parameter value ratio, then calculate the quadratic sum of each ratio again.Therefore, variance is being calculated
When, it can be needed according to technique or design needs, each technological parameter can also be entered to the item of variance contribution in other ways
Row weighting or normalization.
Except variance calculates, data can also can be calculated using the group of technological parameter as a vector, processing unit 216
Vector vector corresponding with the technological parameter of the sensing from sensor corresponding to each group technological parameter is in space in storehouse 215
Vector distance, one group of minimum technological parameter of vector distance is then selected to join as with the close technique of the technological parameter of sensing
Number.Various vector distances can be used as vector distance used herein.
According in some embodiments of the present disclosure, if film characteristics are limited primarily by a technological parameter, with
The close technological parameter of the technological parameter of sensing can also be the minimum technological parameter of the variance between the technological parameter of sensing,
That is, the minimum technological parameter of the absolute value of the difference between the technological parameter of sensing.
According to some embodiments, there may be multigroup parameter value to correspond to same film characteristics (such as film thickness).Example
Such as, according to previous embodiment, film thickness corresponding to the technological parameter of sensing is 3 μm, and the desired value of film thickness is 2.5 μm,
Then film thickness corresponding to selection is 2 μm of technological parameter as adjusted value, and is 2 μm of corresponding technological parameters with film thickness
May have multigroup.In such a case, it is possible to first determined according to any embodiment corresponding with the adjusted value of technological parameter thin
Film thickness, then one group of technological parameter is selected as adjusted value from multigroup technological parameter corresponding to the film thickness.Certainly may be used
Arbitrarily to select one group of technological parameter to be used as adjusted value from multigroup technological parameter.For example, it is also possible to from multigroup work
The immediate one group of technological parameter of one group of technological parameter with sensing, or the technique ginseng that selection needs adjust are selected in skill parameter
One group of technological parameter of number minimum number, the adjusted value as technological parameter.
According to a kind of embodiment, before chemical vapor deposition processes start, chemical meteorology deposition mistake can be first set
The initial value of each technological parameter of journey.Such as can be in database each technological parameter and film characteristics between it is corresponding
Relation, the desired value based on film characteristics, to set the initial value of each technological parameter.For example, with the corresponding relation shown in Fig. 4
Exemplified by, if the desired value of film thickness is 2.0 μm, the 3rd group of technique corresponding with 2.0 μm of film thickness can be selected to join
Initial value of the number as technological parameter.
In addition, another parameter of chemical vapor deposition processes is processing time.For example, for film thickness, most
The film thickness obtained eventually increases with the increase of processing time.In each embodiment described above, it is assumed that each place
The total processing time of reason process is identical, although joining in that is, above-mentioned each embodiment in chemical vapor deposition processes to each technique
Number is constantly adjusted, but is remained in that total processing time constant.According in some embodiments of the present disclosure, sensor
211-214 may be configured to sense technological parameter according to the predetermined cycle, and processing unit 216 can determine work in each cycle
The adjusted value of skill parameter.For example, sensor 211-214 may be configured to sense technological parameter so that 30 seconds are the cycle, and locate
The output adjustment value (in i.e. 30 seconds) only in a cycle of device 216 is managed, so that the adjusted value determined in a cycle is only answered
For the chemical vapor deposition in the cycle, process parameter value is changed to the process parameter value initially set afterwards.So, every
The individual cycle can adjust the technological parameter of chemical vapor deposition processes, avoid for example carrying out for a long time according to certain group running parameter
Chemical vapor deposition, also avoid the overcompensation of technological parameter, so as to will not substantial deviation film characteristics desired value.Can basis
Technique is needed to set the cycle.For example, can be by the cycle set can be special to film under current process parameter
Property causes the minimum time section of substantial differences or predetermined unit difference (such as 0.1 μm or 0.5 μm).
To prepare SiO in each embodiment above2To the chemical vapor deposition unit and chemistry of the disclosure exemplified by film
CVD method is described in detail.It is understood, however, that the disclosure is not limited to prepare SiO2Film.For example, using
It is thin that the chemical vapor deposition unit and chemical gaseous phase depositing process of the disclosure can also prepare the media such as SiN, GaN, GaO
Film, semiconductive thin film (polysilicon, monocrystalline silicon etc.) and conductive film (Au, Al, Cu etc.) can also be prepared.
In addition, the characteristic of film is also not necessarily limited to the thickness in the various embodiments described above.For example, for dielectric film, it is thin
The characteristic of film can also be refractive index (refractive index), absorption index (absorption index) etc..For leading
Conductive film, the characteristic of film can also be such as resistivity.
In addition, what is carried out in above embodiment by taking radio frequency plasma enhancing chemical vapor deposition (PECVD) as an example retouches
State.It should be appreciated that present invention can also apply in the chemical vapor deposition processes of various other types, such as thermal chemical vapor
Deposit (hot CVD), Laser chemical deposition (LCVD), sonochemistry vapour deposition (UWCVD), electron cyclotron resonace chemical gaseous phase
Deposit (ECRCVD), metal organic chemical vapor deposition (MOCVD) etc..
In addition, work is used as using gas flow, reaction chamber temperature, reative cell air pressure and radio-frequency power in above-mentioned each embodiment
Make the example of parameter.But embodiment of the present disclosure not limited to this.For example, the running parameter of sensor sensing can also be
Such as byproduct compounds, backing line air pressure, backing line temperature, rga (RGA) spectrum, infrared (IR) spectrum etc. represent
The state parameter of chemical vapor deposition processes.Here, backing line refers to pressure controller 208 and reative cell 203 in such as Fig. 2
Between pipeline 218, and the pipeline 219 between pump 209 and pressure controller 208.Shape can also be stored with database
State parameter., equally can be in the desired value and database according to film characteristics according to the method for the description of each embodiment above
Film characteristics corresponding with the state parameter sensed determine such as gas flow, reaction chamber temperature, reaction chamber pressure, radio frequency work(
The running parameters such as rate.
In addition, in fig. 2, although database 215 and processing unit 216 are shown as separated device, database
215 can be stored in processing unit 216.For example, when processing unit 216 is computer, database 215 can be stored in meter
In the storage device of calculation machine.Or database 215 can be located on remote server, processing unit 216 can be for example, by mutual
The internet interview server.
The work stored in database 215 can be seen that according to the description above to the chemical gaseous phase depositing process of the disclosure
The group number of skill parameter is more, and processing unit 216 is more possible to find in database 215 same or like one or more groups of
Technological parameter, and the technological parameter found the technological parameter that also more likely proximity transducer senses.Therefore, can be with
Data are collected using various ways to establish database 215.For example, communicator is provided with chemical vapor deposition unit,
The technological parameter of each chemical vapor deposition process and the property of resulting film can be supplied to far for example, by network
Journey server.The remote server is for example provided by the manufacturer of chemical vapor deposition unit, can be the chemistry of every kind of model
Vapor phase growing apparatus collects data, so as to establish corresponding database 215.So, from more with model chemical vapor deposition
The technological parameter of device can be stored in database 215, so as to improve the data volume stored in database 215.In addition,
Chemical vapor deposition unit can also be special the running parameter of each chemical vapor deposition processes and the film of prepared film
Property is stored on local data base.
A series of above-mentioned processing that processing unit 216 in the disclosure performs can be performed by hardware, can also be performed by software.
In the case where performing this series of processes with software, the program for forming software is mounted in a computer.Here, in computer
In, including the computer being fitted into specialized hardware is (for example, can be various types of to perform by installing various types of programs
The general purpose personal computer of function) etc..
Fig. 5 is the diagram of the construction example of the hardware for the computer for being shown as processing unit 216.
In computer 500, CPU (CPU) 504, storage device 510, input unit 506, output device
508th, communicator 512 is connected to each other by bus 502.
Input unit 506 includes keyboard, mouse, microphone etc..Output device 508 includes display, loudspeaker etc..Storage
Device 510 includes hard disk, nonvolatile memory etc..Communicator 512 is including network interface etc..
In computer 500 constructed as described above, for example, CPU 504 will be stored in storage device via bus 502
Program (such as operating system 516 and using 518) in 510 is loaded into run memory 514 and runs it, so as to perform
A series of above-mentioned processing.
For example, the program of computer 500 (CPU 504) operation can be recorded in removable medium as encapsulation medium etc.
And it is provided.Program can be provided via the wired or wireless transmission medium of such as LAN, internet or digital satellite broadcasting.
In computer 500, program can be received by communicator 512 via wired or wireless transmission medium and can be by journey
Sequence is installed in storage device 510.Or program can be arranged in storage device 510 in advance.
The program that computer 500 is run can follow the order illustrated in this specification to handle in a manner of time series
Program, or can be concurrently or the program in necessary timing while calling (such as, when perform) processing.
Here, in this manual, description is suitable to the processing step for the program for making computer 500 perform various types of processing
The rapid order for being not necessarily required to follow flow chart description is handled in a manner of time series and also includes concurrently or independently holding
Capable processing (for example, parallel processing or the processing carried out by object).
Program can be by computer disposal program or the decentralized processing that multiple computers carry out can be subjected to.Program
Remote computer can be passed to run.
Word "front", "rear", " top ", " bottom " in specification and claim, " on ", " under " etc., if deposited
If, it is not necessarily used to describe constant relative position for descriptive purposes.It should be appreciated that the word so used
Language is interchangeable in appropriate circumstances so that embodiment of the disclosure described herein, for example, can with this institute
Those of description show or other are orientated in other different orientations and operated.
As used in this, word " exemplary " means " being used as example, example or explanation ", not as will be by
" model " accurately replicated.It is not necessarily to be interpreted than other implementations in any implementation of this exemplary description
Preferable or favourable.Moreover, the disclosure is not by above-mentioned technical field, background technology, the content of the invention or embodiment
Given in the theory that is any stated or being implied that goes out limited.
As used in this, word " substantially " mean comprising by design or manufacture the defects of, device or element appearance
Any small change caused by difference, environment influence and/or other factorses.Word " substantially " also allows by ghost effect, made an uproar
Caused by sound and the other actual Considerations being likely to be present in actual implementation with perfect or preferable situation
Between difference.
In addition, just to the purpose of reference, can also be described below it is middle use certain term, and thus not anticipate
Figure limits.For example, unless clearly indicated by the context, be otherwise related to the word " first " of structure or element, " second " and it is other this
Class numeral word does not imply order or sequence.
It should also be understood that the word of "comprises/comprising" one is as used herein, illustrate pointed feature, entirety, step be present
Suddenly, operation, unit and/or component, but it is not excluded that in the presence of or the one or more of the other feature of increase, entirety, step, behaviour
Work, unit and/or component and/or combinations thereof.
In the disclosure, therefore term " offer " " it is right to provide certain from broadly by covering obtain object all modes
As " including but not limited to " purchase ", " preparation/manufacture ", " arrangement/setting ", " installation/assembling ", and/or " order " object etc..
It should be appreciated by those skilled in the art that the border between aforesaid operations is merely illustrative.Multiple operations
Single operation can be combined into, single operation can be distributed in additional operation, and operate can at least portion in time
Divide and overlappingly perform.Moreover, alternative embodiment can include multiple examples of specific operation, and in other various embodiments
In can change operation order.But others are changed, variations and alternatives are equally possible.Therefore, the specification and drawings
It should be counted as illustrative and not restrictive.
In addition, embodiment of the present disclosure can also include the example below：
A kind of 1. device for chemical vapor deposition processes, it is characterised in that including：
Sensor, it is configured to sense technological parameter in the chemical vapor deposition processes；
Database, it is configured to store the technological parameter related to the chemical vapor deposition processes and corresponding film
Characteristic；And
Processing unit, it is configured to corresponding with the technological parameter of sensing in desired value and database according to film characteristics
Film characteristics, determine the adjusted value of the technological parameter in the chemical vapor deposition processes.
2. the device according to 1, it is characterised in that the processing unit is configured to：Search in the database
Equal with the technological parameter of sensing or similar technological parameter, will be corresponding with described equal or similar technological parameter in database
Film characteristics as film characteristics corresponding with the technological parameter of sensing.
3. the device according to 1, it is characterised in that the processing unit is configured to：In the technological parameter with sensing
In the case that corresponding film characteristics are more than the desired value of the film characteristics, select in the database with being less than the film
Technological parameter corresponding to the film characteristics of the desired value of characteristic, the adjusted value as the technological parameter.
4. the device according to 1, it is characterised in that the processing unit is configured to：In the technological parameter with sensing
In the case that corresponding film characteristics are less than the desired value of the film characteristics, select in the database with being more than the film
Technological parameter corresponding to the film characteristics of the desired value of characteristic, the adjusted value as the technological parameter.
5. according to the device described in 3 or 4, it is characterised in that film corresponding with the technological parameter of sensing is special in database
Property with the difference between the desired value of the film characteristics be substantially equal to the desired values of the film characteristics with database with institute
State the difference between film characteristics corresponding to the adjusted value of technological parameter.
6. the device according to 5, it is characterised in that film characteristics corresponding with the technological parameter of sensing are same in database
The desired value of poor and described film characteristics between the desired value of the film characteristics with database with the technological parameter
Poor difference between film characteristics corresponding to the adjusted value film characteristics corresponding with the technological parameter of sensing in database are same
In the range of poor positive and negative 33.3% between the desired value of the film characteristics.
7. the device according to 2, it is characterised in that the processing unit is configured to：
Calculate the variance of the technological parameter stored in the technological parameter and database of sensing；And
The minimum technological parameter of variance is selected as technological parameter similar in the technological parameter with sensing.
8. device according to claim 2, it is characterised in that the processing unit is configured to：
The difference of the technological parameter and technological parameter of sensing stored in database is calculated relative to the technological parameter of sensing
The quadratic sum of ratio；
The minimum technological parameter of the quadratic sum is selected as technological parameter similar in the technological parameter with sensing.
9. the device according to 1, it is characterised in that
The sensor is configured to sense technological parameter with the predetermined cycle, and
The processing unit is configured to determine the adjusted value of technological parameter in each cycle.
10. the device according to 1, it is characterised in that thickness of the film characteristics including film, refractive index, absorption
Index and resistance value.
11. the device according to 1, it is characterised in that the technological parameter is to be used to control the chemical vapor deposition
The parameter of process.
12. the device according to 11, it is characterised in that the technological parameter includes gas flow, reative cell air pressure, anti-
Answer room temperature and radio-frequency power.
A kind of 13. method for chemical vapor deposition processes, it is characterised in that including：
Technological parameter is sensed in the chemical vapor deposition processes；
According to film characteristics corresponding with the technological parameter of sensing in the desired value of film characteristics and database, institute is determined
The adjusted value of the technological parameter in chemical vapor deposition processes is stated, wherein, the database purchase has and the chemical gas
The related technological parameter of phase deposition process and corresponding film characteristics.
14. the method according to 13, it is characterised in that also include：
Search or similar technological parameter equal with the technological parameter of sensing in the database, by database with institute
Film characteristics corresponding to equal or similar technological parameter are stated as film characteristics corresponding with the technological parameter of sensing.
15. the method according to 13, it is characterised in that determine the technique ginseng in the chemical vapor deposition processes
Several adjusted values include：
In the case where film characteristics corresponding with the technological parameter of sensing are more than the desired value of the film characteristics, selection
Technological parameter corresponding with the film characteristics of the desired value less than the film characteristics, joins as the technique in the database
Several adjusted values.
16. the method according to 13, it is characterised in that determine the technique ginseng in the chemical vapor deposition processes
Several adjusted values include：
In the case where film characteristics corresponding with the technological parameter of sensing are less than the desired value of the film characteristics, selection
Technological parameter corresponding with the film characteristics of the desired value more than the film characteristics in the database, as technological parameter
Adjusted value.
17. according to the method described in 15 or 16, it is characterised in that film corresponding with the technological parameter of sensing in database
Characteristic with the difference between the desired value of the film characteristics be substantially equal to the desired values of the film characteristics with database with
Difference between film characteristics corresponding to the adjusted value of the technological parameter.
18. the method according to 14, it is characterised in that film characteristics corresponding with the technological parameter of sensing in database
With the poor and described film characteristics between the desired value of the film characteristics desired value with database with the technological parameter
Adjusted value corresponding to poor difference between the film characteristics film characteristics corresponding with the technological parameter of sensing in database
In the range of poor positive and negative 33.3% between the desired value of the film characteristics.
19. the method according to 14, it is characterised in that search in the database close with the technological parameter sensed
Technological parameter include：
Calculate the variance of the technological parameter stored in the technological parameter and database of sensing；And
The minimum technological parameter of variance is selected as technological parameter similar in the technological parameter with sensing.
20. according to the method for claim 14, it is characterised in that search the technique with sensing in the database
The technological parameter of parameter similar includes：
The difference of the technological parameter and technological parameter of sensing stored in database is calculated relative to the technological parameter of sensing
The quadratic sum of ratio；
The minimum technological parameter of the quadratic sum is selected as technological parameter similar in the technological parameter with sensing.
21. the method according to 13, it is characterised in that
Technological parameter is sensed with the predetermined cycle in the step of sensing technological parameter, and
It is determined that technological parameter adjusted value the step of in each cycle determine the adjusted value of technological parameter.
22. the method according to 13, it is characterised in that thickness of the film characteristics including film, refractive index, absorption
Index and resistance value.
23. the method according to 13, it is characterised in that the technological parameter is to be used to control the chemical vapor deposition
The parameter of process.
24. the method according to 13, it is characterised in that the technological parameter includes gas flow, reative cell air pressure, anti-
Answer room temperature and radio-frequency power.
Although some specific embodiments of the disclosure are described in detail by example, the skill of this area
Art personnel it should be understood that above example merely to illustrate, rather than in order to limit the scope of the present disclosure.It is disclosed herein
Each embodiment can in any combination, without departing from spirit and scope of the present disclosure.It is to be appreciated by one skilled in the art that can be with
A variety of modifications are carried out to embodiment without departing from the scope of the present disclosure and spirit.The scope of the present disclosure is limited by appended claims
It is fixed.
Claims (10)
- A kind of 1. device for chemical vapor deposition processes, it is characterised in that including：Sensor, it is configured to sense technological parameter in the chemical vapor deposition processes；Database, is configured to store the technological parameter related to the chemical vapor deposition processes and corresponding film is special Property；AndProcessing unit, it is configured to corresponding with the technological parameter of sensing thin in desired value and database according to film characteristics Membrane property, determine the adjusted value of the technological parameter in the chemical vapor deposition processes.
- 2. device according to claim 1, it is characterised in that the processing unit is configured to：In the database Search or similar technological parameter equal with the technological parameter of sensing, by database with described equal or similar technological parameter Corresponding film characteristics are as film characteristics corresponding with the technological parameter of sensing.
- 3. device according to claim 1, it is characterised in that the processing unit is configured to：In the technique with sensing In the case that film characteristics corresponding to parameter are more than the desired value of the film characteristics, select in the database and less than described Technological parameter corresponding to the film characteristics of the desired value of film characteristics, the adjusted value as the technological parameter.
- 4. device according to claim 1, it is characterised in that the processing unit is configured to：In the technique with sensing In the case that film characteristics corresponding to parameter are less than the desired value of the film characteristics, select in the database and more than described Technological parameter corresponding to the film characteristics of the desired value of film characteristics, the adjusted value as the technological parameter.
- 5. the device according to claim 3 or 4, it is characterised in that corresponding with the technological parameter of sensing thin in database Membrane property is substantially equal to the desired value of the film characteristics with database with the difference between the desired value of the film characteristics Difference between film characteristics corresponding with the adjusted value of the technological parameter.
- 6. device according to claim 1, it is characterised in thatThe sensor is configured to sense technological parameter with the predetermined cycle, andThe processing unit is configured to determine the adjusted value of technological parameter in each cycle.
- A kind of 7. method for chemical vapor deposition processes, it is characterised in that including：Technological parameter is sensed in the chemical vapor deposition processes；According to film characteristics corresponding with the technological parameter of sensing in the desired value of film characteristics and database, describedization is determined The adjusted value of the technological parameter in vapor deposition processes is learned, wherein, the database purchase has and the chemical vapor deposition The related technological parameter of product process and corresponding film characteristics.
- 8. according to the method for claim 7, it is characterised in that also include：Search or similar technological parameter equal with the technological parameter of sensing in the database, by database with the phase Deng or similar technological parameter corresponding to film characteristics as film characteristics corresponding with the technological parameter of sensing.
- 9. according to the method for claim 7, it is characterised in that determine the technique in the chemical vapor deposition processes The adjusted value of parameter includes：In the case where film characteristics corresponding with the technological parameter of sensing are more than the desired value of the film characteristics, described in selection Technological parameter corresponding with the film characteristics of the desired value less than the film characteristics in database, as the technological parameter Adjusted value.
- 10. according to the method for claim 7, it is characterised in that determine the work in the chemical vapor deposition processes The adjusted value of skill parameter includes：In the case where film characteristics corresponding with the technological parameter of sensing are less than the desired value of the film characteristics, described in selection Technological parameter corresponding with the film characteristics of the desired value more than the film characteristics in database, as the technological parameter Adjusted value.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110987249A (en) * | 2019-12-09 | 2020-04-10 | 武汉纺织大学 | Fabric type pressure sensor with controllable performance and method for adjusting and controlling pressure sensing performance |
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