CN103866285B - Utilize ald to prepare the method for film - Google Patents
Utilize ald to prepare the method for film Download PDFInfo
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- CN103866285B CN103866285B CN201210552777.XA CN201210552777A CN103866285B CN 103866285 B CN103866285 B CN 103866285B CN 201210552777 A CN201210552777 A CN 201210552777A CN 103866285 B CN103866285 B CN 103866285B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of method of utilizing ald to prepare film, whether described method is identified precursor source by precursor source and temperature adjusting database is the precursor source that ald and chemical vapour deposition (CVD) are suitable for simultaneously, and control the temperature of reaction chamber and sample according to the precursor source identifying, can realize in the situation that ensureing chamber vacuum, parasitic chemical vapour deposition (CVD) reaction everywhere of inhibitory reaction chamber, make film forming substrate temperature required in optimum ald, the fully required precursor source of absorption, the accessory substance that desorption need to be got rid of simultaneously, prepare thus high-quality thin-film material.
Description
Technical field
The present invention relates to technique for atomic layer deposition field, be specifically related to one and utilize ald to prepare filmMethod.
Background technology
Ald (ALD) technology is one of current state-of-the-art film deposition techniques, its uniqueness heavyLong-pending mode (monatomic layer by layer deposition) makes the film of preparation have at the aspect of performance such as homogeneity, roughnessVery large improvement, except growth rate is lower, all the other aspects are all better than other depositional modes.
ALD deposition principle and chemical vapor deposition (CVD) are approximate, the volatility of precursors and stableProperty be all in course of reaction must consider key factor. Different, ALD precursors needs canCarry out effective chemical reaction with backing material or substrate material surface group surface rapidly, and reach fullWith adsorbed film deposition process; And CVD reaction temperature is relatively high, persursor material just can like thisWith in the strong indoor gas-phase reaction that first occurs, fall within afterwards and on substrate, complete deposition process. These differences cause ALDDeposition has better step coverage, impurity homogeneity of ingredients still less, and lower film-forming temperature.
ALD technology still, in constantly improving, up to the present, is applicable to the precursor of CVD though not allCan be technical applicable at ALD, be that both can share but also have a large amount of presoma reaction sources, for exampleTrimethyl borine, Boron tribromide, diethyl zinc etc. These general character of ALD and CVD make to fit when both simultaneouslyWith precursor source while entering reaction chamber, in suitable temperature range (between 300 DEG C to 600 DEG C),Can there is the layer by layer deposition reaction of ALD and the one-tenth nuclear reaction of CVD simultaneously.
In order to make ALD bring into play to greatest extent its characteristic and advantage, need to suppress atomic layer deposition system reactionChamber parasitic CVD reaction everywhere, makes the required chemical reaction temperature of film forming substrate in optimum, fully inhalesAttached required precursor source, the accessory substance that desorption need to be got rid of simultaneously, prepares thus ALD and deposits required heightQuality thin film material.
Summary of the invention
The object of the present invention is to provide a kind of method of utilizing ald to prepare film, can realizeEnsure in the situation of reaction chamber vacuum the parasitic chemical vapour deposition (CVD) everywhere of inhibitory reaction chamberReaction, prepares high-quality thin film material thus.
In order to achieve the above object, the technical solution used in the present invention is:
Utilize ald to prepare a method for film, comprise the steps:
Step (1) passes into the first precursor source in the reaction chamber of atomic layer deposition apparatus;
Step (2) detects described the first precursor source, and compares with precursor source and temperature adjusting database,Whether identify described the first precursor source is the presoma that ald and chemical vapour deposition (CVD) are suitable for simultaneouslySource; Described precursor source and temperature adjusting database have comprised and have been applicable to ald and chemical vapour deposition (CVD)Precursor source, and corresponding precursor source is carried out the temperature range of the sample of chemical vapour deposition reaction;
Step (3) is ald and chemical vapour deposition (CVD) while when identifying described the first precursor sourceWhen applicable precursor source, carry out according to corresponding precursor source in described precursor source and temperature adjusting databaseThe temperature range of the sample of chemical vapour deposition reaction, the heating-up temperature of regulation and control sample carries out the on sampleAn ald; Be the forerunner who is only applicable to ald when identifying described the first precursor sourceWhen body source, on sample, carry out ald for the first time according to the conventional parameter of ald reaction;
Step (4) passes into the second precursor source in described reaction chamber;
Step (5) detects described the second precursor source, and with described precursor source and temperature adjusting databaseWhether comparison, identifying described the second precursor source is that ald and chemical vapour deposition (CVD) are suitable for simultaneouslyPrecursor source;
Step (6) is ald and chemical vapour deposition (CVD) while when identifying described the second precursor sourceWhen applicable precursor source, carry out according to corresponding precursor source in described precursor source and temperature adjusting databaseThe temperature range of the sample of chemical vapour deposition reaction, the heating-up temperature of regulation and control sample carries out the on sampleSecondary ald; Be the forerunner who is only applicable to ald when identifying described the second precursor sourceWhen body source, on sample, carry out ald for the second time according to the conventional parameter of ald reaction;
Step (7) adjust on sample deposit surface reactivity to pass into for the first time the first precursor source itBefore;
Step (8) is cycled to repeat step (1) to step (7), obtains ald film.
In such scheme, the heating-up temperature of described sample is controlled at 300 DEG C～600 according to different precursor sourceDEG C, the heating-up temperature of described sample is temperature required in being applicable to ald, lower than being applicable to chemical gasDeposit mutually temperature required.
In such scheme, described precursor source and temperature adjusting database also comprise be applicable to ald andThe precursor source of chemical vapour deposition (CVD) is carried out the temperature range of the reaction chamber of chemical vapour deposition reaction.
In such scheme, described step (3) also comprises: be atom when identifying described the first precursor sourceWhen precursor source that layer deposition and chemical vapour deposition (CVD) are suitable for simultaneously, according to described precursor source and temperature adjustingIn database, corresponding precursor source is carried out the temperature range of the reaction chamber of chemical vapour deposition reaction, and regulation and control are anti-Answer the temperature of chamber, on sample, carry out ald for the first time; When identifying described the first presomaSource is while being only applicable to the precursor source of ald, and the conventional parameter reacting according to ald is at sampleOn product, carry out ald for the first time.
In such scheme, described step (6) also comprises: be atom when identifying described the second precursor sourceWhen precursor source that layer deposition and chemical vapour deposition (CVD) are suitable for simultaneously, according to described precursor source and temperature adjustingIn database, corresponding precursor source is carried out the temperature range of the reaction chamber of chemical vapour deposition reaction, and regulation and control are anti-Answer the temperature of chamber, on sample, carry out ald for the second time; When identifying described the second presomaSource is while being only applicable to the precursor source of ald, and the conventional parameter reacting according to ald is at sampleOn product, carry out ald for the second time.
In such scheme, the temperature of described reaction chamber is on the basis of room temperature, to heat up 5 DEG C～200 DEG C, instituteThe temperature of stating reaction chamber is lower than being applicable to atomic layer and chemical vapour deposition (CVD) is temperature required.
In such scheme, described step (4) and step (7), before carrying out, purge described reaction chamber.
Compared with prior art scheme, the beneficial effect that the technical solution used in the present invention produces is as follows:
The present invention, according to different precursor source regulation and control reaction chambers and the heating-up temperature of sample, can realizeEnsure that, in the situation of chamber vacuum, the parasitic chemical vapour deposition (CVD) everywhere of inhibitory reaction chamber is anti-Should, make film forming substrate temperature required in optimum ald, fully adsorb required precursor source, withTime the desorption accessory substance that need to get rid of, prepare thus high-quality thin-film material.
Brief description of the drawings
Fig. 1 is the process chart of Atomic layer deposition method provided by the invention;
Fig. 2 is the reaction profile curve map of ALD and CVD deposition and temperature correlation.
Detailed description of the invention
Below in conjunction with drawings and Examples, technical solution of the present invention is described in detail.
As shown in Figure 1, the invention provides a kind of method of utilizing ald to prepare film, comprise as followsStep:
Step 101, passes into the first precursor source in the reaction chamber of atomic layer deposition apparatus;
Step 102, detects the first precursor source, and compares with precursor source and temperature adjusting database, knowsWhether other the first precursor source is the precursor source that ald and chemical vapour deposition (CVD) are suitable for simultaneously; BeforeDrive body source and temperature adjusting database has comprised the presoma that is applicable to ald and chemical vapour deposition (CVD)Source, and corresponding precursor source is carried out the temperature range of reaction chamber and the sample of chemical vapour deposition reaction;
Step 103 is that ald and chemical vapour deposition (CVD) are suitable for simultaneously when identifying the first precursor sourcePrecursor source time, carry out chemical gaseous phase according to corresponding precursor source in precursor source and temperature adjusting databaseThe reaction chamber of deposition reaction and the temperature range of sample, the regulation and control temperature of reaction chamber and sample add hot temperatureDegree carries out ald for the first time on sample; Former for being only applicable to when identifying the first precursor sourceWhen the precursor source of sublayer deposition, carry out for the first time on sample according to the conventional parameter of ald reactionAld;
Step 104, purges reaction chamber;
Step 105, passes into the second precursor source in reaction chamber;
Step 106, detects the second precursor source, and compares with precursor source and temperature adjusting database, knowsWhether other the second precursor source is the precursor source that ald and chemical vapour deposition (CVD) are suitable for simultaneously;
Step 107 is that ald and chemical vapour deposition (CVD) are suitable for simultaneously when identifying the second precursor sourcePrecursor source time, carry out chemical gaseous phase according to corresponding precursor source in precursor source and temperature adjusting databaseThe reaction chamber of deposition reaction and the temperature range of sample, the regulation and control temperature of reaction chamber and sample add hot temperatureDegree carries out ald for the second time on sample; Former for being only applicable to when identifying the second precursor sourceWhen the precursor source of sublayer deposition, carry out for the second time on sample according to the conventional parameter of ald reactionAld;
Step 108, purges reaction chamber;
Step 109, adjust on sample deposit surface reactivity to pass into for the first time the first precursor source itBefore;
Step 110, is cycled to repeat step 101 to step 109, obtains ald film.
In the present embodiment, the heating-up temperature of sample is controlled at 300 DEG C～600 DEG C according to different precursor source,The heating-up temperature of sample is temperature required in being applicable to ald, lower than being applicable to chemical vapour deposition (CVD) instituteNeed temperature.
In the present embodiment, the temperature of reaction chamber is on the basis of room temperature, heat up or lower the temperature 5 DEG C～200 DEG C,The temperature of reaction chamber is lower than being applicable to atomic layer and chemical vapour deposition (CVD) is temperature required. Heating reaction chamberMain purpose is to keep cavity vacuum, and the speed purging, lower than be applicable to ALD and CVD bothTemperature be the product that has any parasitism on cavity, cause gas circuit stop up.
Reaction chamber temperature in the present invention is constant during whole film preparation, according to the forerunner of identificationBody source kind, formulates and heats up or cooling, when having reached after the temperature of setting, and just no longer change of temperature. Different precursor source has different gasification temperatures and pressure, has selected certain precursor source, according toExperimental data record, a selected suitable cavity temperature, is unlikely to overheated this precursor sourceIn cavity temperature, on pipeline or cavity wall, deposit, be also unlikely to cause because cavity temperature is too low vacuumIt is unfavorable to keep, and purges insufficient or purge time is long.
As shown in Figure 2, the interior expression of temperature range 1 deposits temperature required lower than being applicable to ALD and CVDDeposition reaction curve, the interior expression of temperature range 2 is applicable to ALD and deposits temperature required deposition reaction curve,The interior expression of temperature range 3 is applicable to CVD and deposits temperature required deposition reaction curve. Can from Fig. 2Go out, when reaction temperature is in the time that temperature range 1 is interior, because this temperature is any anti-lower than ALD and CVDThe temperature of answering, can avoid having on cavity the product of any parasitism; And when reaction temperature is in temperature modelEnclose 2 and the scope that overlaps of temperature range 3 in time, and precursor source is applicable to ALD and CVD deposition simultaneously,Can there is the layer by layer deposition reaction of ALD and the one-tenth nuclear reaction of CVD in precursor source so simultaneously.
The present invention is exactly in the temperature range overlapping with CVD deposition reaction at ALD, for different presomasSource is carried out temperature adjusting, reaction chamber temperature is is also regulated and controled simultaneously sample, can promote ALD reactionObtain more excellent film quality, to CVD, reaction has certain inhibitory action simultaneously.
Embodiment 1:
The present embodiment provides a kind of Atomic layer deposition method, specifically comprises the steps:
Step 201, sets sample stage temperature, after detection setting value reaches, sample is put into the sample of reaction chamberOn platform, sample is heated;
Step 202, passes into reaction chamber by the first precursor source, and the kind of the first precursor source comprises front threeBase boron, trimethyl aluminium, trimethyl indium, titanium tetrachloride, Boron tribromide, two luxuriant magnesium, diethyl zinc etc. are multipleThe presoma reaction source that ALD and CVD are suitable for simultaneously;
Step 203, by precursor source and temperature adjusting database identification the first precursor source formulation reactionThe temperature of chamber;
Step 204, controls reaction chamber and heats up, and starts deposition for the first time, and intensification temperature range is room temperatureRise 5 DEG C to 200 DEG C;
Step 205, purges reaction chamber;
Step 206, passes into reaction chamber by the second precursor source, the second precursor source comprise water, oxygen,Nitrogen, ammonia etc. are multiple;
Step 207, by precursor source and temperature adjusting database identification the second precursor source formulation reactionThe temperature of chamber;
Step 208, controls reaction chamber cooling, and starts deposition for the second time, and cooling temperature range is from room temperatureFall 5 DEG C to 200 DEG C;
Step 209, purges reaction chamber;
Step 210, before the deposit surface reactivity of adjustment sample extremely passes into precursor source for the first time;
Step 211, above step cycle repeats.
Embodiment 2:
The present embodiment provides a kind of Atomic layer deposition method, specifically comprises the steps:
Step 301, sets sample stage temperature, after detection setting value reaches, sample is put into the sample of reaction chamberOn platform, sample is heated;
Step 302, passes into reaction chamber by the first precursor source, and the kind of the first precursor source comprises front threeBase boron, trimethyl aluminium, trimethyl indium, titanium tetrachloride, Boron tribromide, two luxuriant magnesium, diethyl zinc etc. are multipleThe presoma reaction source that ALD and CVD are suitable for simultaneously;
Step 303, by precursor source and temperature adjusting database identification the first precursor source formulation reactionThe temperature of chamber;
Step 304, controls reaction chamber cooling, and starts deposition for the first time, and cooling temperature range from 5 DEG C extremely200℃；
Step 305, purges reaction chamber;
Step 306, passes into reaction chamber by the second precursor source, the second precursor source comprise water, oxygen,Nitrogen, ammonia etc. are multiple;
Step 307, by precursor source and temperature adjusting database identification the second precursor source formulation reactionThe temperature of chamber;
Step 308, controls reaction chamber and heats up, and starts deposition for the second time, and intensification temperature range from 5 DEG C extremely200℃；
Step 309, purges reaction chamber;
Step 310, before the deposit surface reactivity of adjustment sample extremely passes into precursor source for the first time;
Step 311, above step cycle repeats.
The present invention, according to different precursor source regulation and control reaction chambers and the heating-up temperature of sample, can realizeEnsure that, in the situation of chamber vacuum, the parasitic chemical vapour deposition (CVD) everywhere of inhibitory reaction chamber is anti-Should, make film forming substrate temperature required in optimum ald, fully adsorb required precursor source, withTime the desorption accessory substance that need to get rid of, prepare thus high-quality thin-film material.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for abilityThe technical staff in territory, the present invention can have various modifications and variations. All the spirit and principles in the present invention itIn, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. utilize ald to prepare the method for film, it is characterized in that, comprise the steps:
Step (1) passes into the first precursor source in the reaction chamber of atomic layer deposition apparatus;
Step (2) detects described the first precursor source, and compares with precursor source and temperature adjusting database,Whether identify described the first precursor source is the presoma that ald and chemical vapour deposition (CVD) are suitable for simultaneouslySource; Described precursor source and temperature adjusting database comprise and are applicable to ald and chemical vapour deposition (CVD)Precursor source, and corresponding precursor source is carried out the temperature range of the sample of chemical vapour deposition reaction;
Step (3) is ald and chemical vapour deposition (CVD) while when identifying described the first precursor sourceWhen applicable precursor source, carry out according to corresponding precursor source in described precursor source and temperature adjusting databaseThe temperature range of the sample of chemical vapour deposition reaction, the heating-up temperature of regulation and control sample carries out the on sampleAn ald; The heating-up temperature of described sample according to different precursor source be controlled at 300 DEG C～600 DEG C, the heating-up temperature of described sample is temperature required in being applicable to ald, lower than being applicable to chemistryVapour deposition is temperature required; When identify described the first precursor source be only applicable to ald beforeWhile driving body source, on sample, carry out ald for the first time according to the conventional parameter of ald reaction;
Step (4) passes into the second precursor source in described reaction chamber;
Step (5) detects described the second precursor source, and with described precursor source and temperature adjusting databaseWhether comparison, identifying described the second precursor source is that ald and chemical vapour deposition (CVD) are suitable for simultaneouslyPrecursor source;
Step (6) is ald and chemical vapour deposition (CVD) while when identifying described the second precursor sourceWhen applicable precursor source, carry out according to corresponding precursor source in described precursor source and temperature adjusting databaseThe temperature range of the sample of chemical vapour deposition reaction, the heating-up temperature of regulation and control sample carries out the on sampleSecondary ald; The heating-up temperature of described sample according to different precursor source be controlled at 300 DEG C～600 DEG C, the heating-up temperature of described sample is temperature required in being applicable to ald, lower than being applicable to chemistryVapour deposition is temperature required; When identify described the second precursor source be only applicable to ald beforeWhile driving body source, on sample, carry out ald for the second time according to the conventional parameter of ald reaction;
Step (7) adjust on sample deposit surface reactivity to pass into for the first time the first precursor source itFront state;
Step (8) is cycled to repeat step (1) to step (7), obtains ald film.
2. the method for utilizing ald to prepare film as claimed in claim 1, is characterized in that, instituteState precursor source and temperature adjusting database also comprises the forerunner who is applicable to ald and chemical vapour deposition (CVD)Body source is carried out the temperature range of the reaction chamber of chemical vapour deposition reaction.
3. the method for utilizing ald to prepare film as claimed in claim 2, is characterized in that, instituteStating step (3) also comprises: be that ald and chemical gaseous phase are heavy when identifying described the first precursor sourceWhile amassing simultaneously applicable precursor source, according to corresponding presoma in described precursor source and temperature adjusting databaseThe temperature range of the reaction chamber of chemical vapour deposition reaction is carried out in source, and the temperature of regulation and control reaction chamber, at sampleOn product, carry out ald for the first time; When identifying described the first precursor source for being only applicable to atomic layerWhen the precursor source of deposition, on sample, carry out atom for the first time according to the conventional parameter of ald reactionLayer deposition.
4. the method for utilizing ald to prepare film as claimed in claim 2, is characterized in that, instituteStating step (6) also comprises: be that ald and chemical gaseous phase are heavy when identifying described the second precursor sourceWhile amassing simultaneously applicable precursor source, according to corresponding presoma in described precursor source and temperature adjusting databaseThe temperature range of the reaction chamber of chemical vapour deposition reaction is carried out in source, and the temperature of regulation and control reaction chamber, at sampleOn product, carry out ald for the second time; When identifying described the second precursor source for being only applicable to atomic layerWhen the precursor source of deposition, on sample, carry out atom for the second time according to the conventional parameter of ald reactionLayer deposition.
5. the ald that utilizes as described in claim 3 or 4 is prepared the method for film, it is characterized in that,The temperature of described reaction chamber is on the basis of room temperature, heat up or lower the temperature 5 DEG C～200 DEG C, described reaction chamberTemperature lower than being applicable to atomic layer and chemical vapour deposition (CVD) is temperature required.
6. the method for utilizing ald to prepare film as claimed in claim 1, is characterized in that, instituteState step (4) and step (7) before carrying out, purge described reaction chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210552777.XA CN103866285B (en) | 2012-12-18 | 2012-12-18 | Utilize ald to prepare the method for film |
| PCT/CN2012/086984 WO2014094263A1 (en) | 2012-12-18 | 2012-12-20 | Method for utilizing atomic layer deposition to prepare thin film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210552777.XA CN103866285B (en) | 2012-12-18 | 2012-12-18 | Utilize ald to prepare the method for film |
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| CN103866285A CN103866285A (en) | 2014-06-18 |
| CN103866285B true CN103866285B (en) | 2016-05-11 |
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| CN107974666B (en) * | 2017-11-28 | 2019-08-16 | 南通大学 | A kind of method of the ALD-window of quick measurement sequential keyboard encoder ALD processing procedure |
| CN110527974A (en) * | 2018-05-25 | 2019-12-03 | 中国电子科技集团公司第十八研究所 | Preparation method of atomic layer deposition LiPON solid electrolyte film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1768158A (en) * | 2003-02-04 | 2006-05-03 | 泰格尔公司 | Nanolayer deposition process |
| CN101300373A (en) * | 2005-10-27 | 2008-11-05 | 赛德尔参与公司 | Method for monitoring a plasma, device for carrying out this method, use of this method for depositing a film onto a PET hollow body |
| US7459913B2 (en) * | 2004-08-13 | 2008-12-02 | International Business Machines Corporation | Methods for the determination of film continuity and growth modes in thin dielectric films |
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| US7442415B2 (en) * | 2003-04-11 | 2008-10-28 | Sharp Laboratories Of America, Inc. | Modulated temperature method of atomic layer deposition (ALD) of high dielectric constant films |
| US8163343B2 (en) * | 2008-09-03 | 2012-04-24 | Applied Materials, Inc. | Method of forming an aluminum oxide layer |
| US8071452B2 (en) * | 2009-04-27 | 2011-12-06 | Asm America, Inc. | Atomic layer deposition of hafnium lanthanum oxides |
| TW201306082A (en) * | 2011-04-18 | 2013-02-01 | Tokyo Electron Ltd | Plasma evaluation method, plasma processing method and plasma processing apparatus |
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- 2012-12-20 WO PCT/CN2012/086984 patent/WO2014094263A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1768158A (en) * | 2003-02-04 | 2006-05-03 | 泰格尔公司 | Nanolayer deposition process |
| US7459913B2 (en) * | 2004-08-13 | 2008-12-02 | International Business Machines Corporation | Methods for the determination of film continuity and growth modes in thin dielectric films |
| CN101300373A (en) * | 2005-10-27 | 2008-11-05 | 赛德尔参与公司 | Method for monitoring a plasma, device for carrying out this method, use of this method for depositing a film onto a PET hollow body |
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| WO2014094263A1 (en) | 2014-06-26 |
| CN103866285A (en) | 2014-06-18 |
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