CN107564878A - The enhanced encapsulating structure of salient point - Google Patents
The enhanced encapsulating structure of salient point Download PDFInfo
- Publication number
- CN107564878A CN107564878A CN201710694122.9A CN201710694122A CN107564878A CN 107564878 A CN107564878 A CN 107564878A CN 201710694122 A CN201710694122 A CN 201710694122A CN 107564878 A CN107564878 A CN 107564878A
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- Prior art keywords
- pad
- salient point
- layer
- enhanced
- opening
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention discloses a kind of enhanced encapsulating structure of salient point, by the way that welding resisting layer upper shed to be dimensioned to the structure for being more than pad and bump size, and coated polymer support ring on the salient point lateral surface between salient point and pad and opening sidewalls and on welding resisting layer, the polymer support materials in cladding salient point foundation portion can be made to wrap up area increase, it can reduce simultaneously and pull stress at salient point, so as to improve the reliability of solder joint.Preferably, the annular groove around pad is formed on dielectric layer or insulating barrier around pad, the extension of Polymer-supported pushing out ring is inserted in annular groove, can further increase polymer wrapped area, improve welding spot reliability and stress at pad can be improved, prevent cold shock testing from causing rupture of line.More preferably, while on welding resisting layer enhancement layer is laid, and the opening size of enhancement layer is designed to the structure for being more than pad and bump size, polymer support materials amount and parcel height can be further ensured that, further improve welding spot reliability.
Description
Technical field
The present invention relates to field of semiconductor package, more particularly to a kind of enhanced encapsulation knot of salient point of semiconductor packaging chip
Structure.
Background technology
The chip of crystal wafer chip dimension encapsulation, when being connected with surface-mounted integrated circuit, generally pass through chip bump attachment to electricity
On the plate of road.At present, it is one of key issue for perplexing properties of product that WLCSP, which encapsulates board level reliability, is surveyed after SMT by falling
Easily there is solder joint fracture at salient point in examination, bias TCT (energization thermal cycling test), can not meet vehicle-mounted, security protection, intelligence wearing
Etc. high reliability request.
Patent document CN106653721A discloses a kind of bump structure around sealing ring, including a chip, chip tool
There are first surface and second surface corresponding thereto, chip first surface or second surface are provided with least one layer of metal level, metal
Layer is provided with one layer of welding resisting layer, and the pad of expose metal layer is offered on welding resisting layer, be disposed with pad polymer adhesive and
Salient point, the polymer adhesive form the sealing ring with 3-D polymer network structures upon reflowing, and sealing ring is on welding resisting layer
Wrap up salient point foundation portion.So, the salient point root loop on welding resisting layer enhances the combination between salient point and pad around sealing ring
Power, and the thrust strength of salient point also greatly increases, and has good reworking, optimizes the reliability connection of salient point, but it is right
In require the products such as more stringent vehicle-mounted, security protection encapsulate, it is desirable to provide a kind of encapsulating structure of better reliability.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention proposes a kind of enhanced encapsulating structure of salient point, increases polymer wrapped
Area reduces and stress is pullled at salient point simultaneously, so as to improve welding spot reliability at salient point, meets vehicle-mounted, security protection, intelligence wearing etc.
High reliability request.
The technical proposal of the invention is realized in this way：
A kind of enhanced encapsulating structure of salient point, including a substrate, have in the substrate as the pad that electrically export is put,
And welding resisting layer is equipped with the substrate, and the first opening of pad in the exposure substrate is reserved with the welding resisting layer, it is described
First opening radial dimension be more than the pad radial dimension, it is described first opening in pad on make have salient point, institute
State to be coated with the salient point lateral surface between salient point and the pad and first opening sidewalls and on the welding resisting layer and polymerize
Thing support ring.
Further, the substrate is chip substrate, and the chip substrate front has dielectric layer and positioned at the medium
Some weld pads of chip internal metallic circuit are electrically connected with layer, second that the exposure weld pad is offered on the dielectric layer opens
Mouthful, the welding resisting layer and the pad are formed on the dielectric layer；The pad is directly arranged on the weld pad exposed or institute
State and the metal rewiring layer for being electrically connected with the weld pad is provided between welding resisting layer and the dielectric layer, the pad is located at the gold
Category is rerouted on layer；Inserted on the dielectric layer formed with the annular groove around the pad, the Polymer-supported pushing out ring extension
In the annular groove.
Further, the substrate is chip substrate, formed with insulating barrier and metal weight cloth on the chip substrate back side
Line layer, the welding resisting layer and the pad are formed at the metal and rerouted on layer, formed with around described on the insulating barrier
The annular groove of pad, the Polymer-supported pushing out ring extension are inserted in the annular groove.
Further, the substrate is packaging body, and there is insulating barrier and metal to reroute layer on the packaging body, described anti-
Layer and the pad are formed at the metal and rerouted on layer, formed with the annular around the pad on the insulating barrier
Groove, the Polymer-supported pushing out ring extension are inserted in the annular groove.
Further, enhancement layer is equipped with the described first parameatal welding resisting layer, appearance is reserved with the enhancement layer
Put the salient point the 3rd is open, the gap described in the polymer support ring filling between the 3rd opening and the salient point, and
Coat the lateral surface of salient point on the enhancement layer.
Further, the enhancement layer thickness is 10-50 μm, and its material is photoresist or dry film.
Further, the salient point is solid soldered ball, hollow soldered ball, plastics core soldered ball, one kind in copper core soldered ball, and institute
Salient point is stated on the pad, and wraps up the pad.
Further, the Polymer-supported pushing out ring after polymer adhesive Reflow Soldering by forming.
Further, the diameter of first opening is bigger than the pad diameter 10-100 μm.
The beneficial effects of the invention are as follows：The present invention provides a kind of enhanced encapsulating structure of salient point, by will be opened on welding resisting layer
Mouth is dimensioned to the structure for being more than pad and bump size, and between salient point and pad and the first opening sidewalls and welding resisting layer
On salient point lateral surface on coated polymer support ring, can make cladding salient point foundation portion polymer support materials wrap up area
(height) increase, while can reduce and pull stress at salient point, so as to improve the reliability of solder joint between salient point and pad.Preferably
, the annular groove around pad is formed on the dielectric layer or insulating barrier around pad, the extension of Polymer-supported pushing out ring is inserted ring
It in shape groove, can further increase polymer wrapped area, improve welding spot reliability and stress at pad can be improved, and then slow down
Junction stress at pad, prevents cold shock testing from causing rupture of line.Strengthen preferably, being laid on welding resisting layer
Layer, and the opening size of enhancement layer is designed to the structure for being more than pad and bump size, make polymer support ring filling the 3rd
Gap between opening and salient point, and the lateral surface of salient point on enhancement layer is coated, polymer support materials can be further ensured that
Amount and parcel height, further improve welding spot reliability.More preferably, enhancement layer is laid on welding resisting layer, Jie around pad
The annular groove around pad is formed on matter layer or insulating barrier, the extension of Polymer-supported pushing out ring is inserted in annular groove.
Brief description of the drawings
Fig. 1 is the enhanced example structure schematic diagram of encapsulating structure one of salient point of the present invention；
Fig. 2 is another example structure schematic diagram of the enhanced encapsulating structure of salient point of the present invention；
Fig. 3 is another example structure schematic top plan view of the enhanced encapsulating structure of salient point of the present invention；
Fig. 4 is the another example structure schematic diagram of the enhanced encapsulating structure of salient point of the present invention；
Fig. 5 is the enhanced encapsulating structure another embodiment structural representation of salient point of the present invention.
Fig. 6 is the example structure schematic diagram for having in the enhanced encapsulating structure of salient point of the present invention annular groove.
Fig. 7 is to have the signal of the example structure of annular groove and enhancement layer in the enhanced encapsulating structure of salient point of the present invention simultaneously
Figure.
Embodiment
It is more understandable to enable the invention to, the embodiment of the present invention is done specifically below in conjunction with the accompanying drawings
It is bright.For convenience of description, each part is not scaled by normal rates in the structure of embodiment accompanying drawing, therefore is not represented each in embodiment
The actual relative size of structure.Above wherein described structure or face or upside, include the middle situation for also having other layers.
Embodiment 1
As shown in figure 1, a kind of enhanced encapsulating structure of salient point, including a substrate, the substrate is chip substrate 101, institute
State some welderings that chip substrate front has dielectric layer 102 and chip internal metallic circuit is electrically connected with the dielectric layer
Pad 103, offers the second opening of the exposure weld pad on the dielectric layer, on the weld pad on the dielectric layer in the second opening
Formed with the pad 104 as electrical export point, welding resisting layer 105 is equipped with the dielectric layer, is reserved with the welding resisting layer
First opening of the exposure pad, the radial dimension of first opening are more than the radial dimension of the pad, and described first
Made on pad in opening have salient point 106 (i.e. on pad long salient point, for example plant soldered ball), the salient point and the pad and
Polymer-supported pushing out ring 107 is coated with salient point lateral surface between first opening sidewalls and on the welding resisting layer.So, lead to
Cross and the first opening size on welding resisting layer is designed to the structure that is more than pad and bump size, and opened in salient point and pad with first
Coated polymer support ring on salient point lateral surface between mouth side wall and on welding resisting layer, the polymer in cladding salient point foundation portion can be made
Backing material parcel area (height) increase, while can reduce and pull stress at salient point, so as to improve between salient point and pad
The reliability of solder joint.
Embodiment 2
As shown in Fig. 2 the present embodiment 2 has most of technical characteristic of embodiment 1, its difference is, in welding resisting layer and
Metal provided with electric connection weld pad between dielectric layer reroutes layer, and (referring to Fig. 3, E-E ' cutting planes do not reroute layer in metal
On circuit), the pad is rerouted on layer located at the metal；I.e. pad is directly arranged on the weld pad exposed, but
It is arranged on metal to reroute on layer, the electrical of the weld pad of chip leads to pad and salient point by metal wiring layer.
Embodiment 3
As shown in figure 4, the present embodiment 2 has most of technical characteristic of embodiment 1, its difference is, welding resisting layer and weldering
Disk is formed at the back side of chip substrate, i.e., reroutes layer formed with insulating barrier 202 and metal on the chip substrate back side, described anti-
Layer and the pad are formed at the metal and rerouted on layer.The present embodiment is commonly in chip back and enters row metal rewiring
Situation, for example chip is electrically led into chip back by silicon hole or fluting, then form insulating barrier, metal in chip back
Reroute layer and welding resisting layer, salient point is formed at default aperture position on welding resisting layer as electrically export point, is provided with opening pair
Metal is answered to reroute the pad of layer.
Embodiment 4
The present embodiment 2 has most of technical characteristic of embodiment 1, and its difference is, substrate is encapsulation in the present embodiment
Body, there is on the packaging body insulating barrier and metal to reroute layer, the welding resisting layer and the pad are formed at the metal weight
On wiring layer, insert described formed with the annular groove around the pad, the Polymer-supported pushing out ring extension on the insulating barrier
In annular groove.The present embodiment is commonly in chip adapter panel, stacked chips encapsulation, chip front side or the back side and has carried out multilayer rewiring
Situation, the salient point on packaging body outermost layer RDL stacked or is connected with other chips or circuit board.Here, dielectric layer is same
Sample is substituted by insulating barrier, can be on the insulating layer formed with the annular groove around pad, and the extension of Polymer-supported pushing out ring is inserted institute
State in annular groove.
As the further improvement of the various embodiments described above, other preferred embodiments are the following provided.
Preferably, as shown in figure 5, formed with the annular groove 108 around the pad, institute on the dielectric layer or insulating barrier
The extension of Polymer-supported pushing out ring is stated to insert in the annular groove.So, by being formed on the dielectric layer or insulating barrier around pad
Around the annular groove of pad, the extension of Polymer-supported pushing out ring is inserted in annular groove, can further increase polymer wrapped area, carry
High welding spot reliability and stress at pad can be improved, and then slow down junction stress at pad, prevent thermal shock from trying
Testing causes rupture of line.Annular groove depth can be with 5-30 μm, and annular groove outer ring is preferably slightly less than the first opening size.Annular groove
In the case where not destroying dielectric layer or the default chip metal circuit of insulating barrier, it can enter and extend into chip substrate,
Chip substrate can use silicon substrate etc..
Preferably, as shown in fig. 6, being equipped with enhancement layer 109, the enhancement layer on the first parameatal welding resisting layer
On be reserved with the 3rd opening of the accommodating salient point, described in the polymer support ring filling between the 3rd opening and the salient point
Gap, and coat the lateral surface of salient point on the enhancement layer.So, by laying enhancement layer on welding resisting layer, and reinforcement is made
The opening size of layer is designed to the structure for being more than pad and bump size, make the opening of polymer support ring filling the 3rd and salient point it
Between gap, and coat the lateral surface of salient point on enhancement layer, polymer support materials amount and parcel height can be further ensured that,
Further improve welding spot reliability.
Preferably, the enhancement layer thickness is 10-50 μm, and its material is photoresist or dry film.Such as in laying welding resisting layer
Afterwards, one layer of glue can be applied again in the above, to increase Polymer-supported pushing out ring dosage, ensure parcel height.
It is furthermore preferred that as shown in fig. 7, formed with the annular groove 108 around the pad on the dielectric layer or insulating barrier,
The Polymer-supported pushing out ring extension is inserted in the annular groove, meanwhile, it is equipped with and adds on the first parameatal welding resisting layer
Strong layer 109, is reserved with the 3rd opening of the accommodating salient point on the enhancement layer, the 3rd described in the polymer support ring filling
Gap between opening and the salient point, and coat the lateral surface of salient point on the enhancement layer；Polymer can preferably be ensured
Fid doses and parcel height, preferably improve welding spot reliability.
Preferably, the salient point is one kind in solid soldered ball, hollow soldered ball, plastics core soldered ball, copper core soldered ball, and described
Salient point wraps up the pad on the pad.So, when soldered ball is formed on pad, it is wrapped pad, can drop
Stress is pullled at low salient point.
Preferably, the Polymer-supported pushing out ring after polymer adhesive Reflow Soldering by forming.Specific implementation can use
Polymer adhesive and salient point are disposed with pad, the Polymer-supported of parcel salient point periphery is formed after polymer adhesive backflow
Pushing out ring.Here, polymer adhesive removes the metal oxide layer on salient point or/and conductive welding disk in reflux course, can be with
Play a part of helping weldering.Preferably, the viscosity of the polymeric adhesive material is 60CP to 40000CP.The polymer glues
Mixture is a kind of unleaded salient point adhesive.
Preferably, the diameter of first opening is bigger than the pad diameter 10-100 μm.That is welding resisting layer opening diameter is big
In 10-100 μm of pad diameter.Specific size can be selected according to chip wiring space.The size of 3rd opening is preferably with the
One opening size is identical, but not limited to this, can also be more than the first opening size or less than the first opening size.
Substrate can be chip substrate or chip packing-body in the present invention, and welding resisting layer and pad can be produced on chip substrate
Or chip packing-body front, it can also be produced on back to the positive back side, can be specifically active component (active
Element) or the integrated circuit such as passive element (passive element), digital circuit or analog circuit electronic component
It is (electronic components), MEMS (Micro Electro Mechanical Systems, MEMS), micro-
Fluid system (micro fluidic systems) or using the physical quantity variation such as heat, light and pressure come the physics sense that measures
Device (physical sensor), surface acoustic wave element, pressure sensor (pressure sensors) are surveyed, but is not limited.
Above example is referring to the drawings, to a preferred embodiment of the present invention will be described in detail.Those skilled in the art
Member by above-described embodiment carry out various forms on modification or change, but without departing substantially from the present invention essence in the case of, all
Fall within the scope and spirit of the invention.
Claims (9)
1. a kind of enhanced encapsulating structure of salient point, it is characterised in that have including a substrate, in the substrate as electrically export
The pad of point, and welding resisting layer is equipped with the substrate, first of pad in the exposure substrate is reserved with the welding resisting layer
Opening, it is described first opening radial dimension be more than the pad radial dimension, it is described first opening in pad on make
Have and wrapped on the salient point lateral surface between salient point, the salient point and the pad and first opening sidewalls and on the welding resisting layer
It is covered with Polymer-supported pushing out ring.
2. the enhanced encapsulating structure of salient point according to claim 1, it is characterised in that：The substrate is chip substrate, institute
Some weld pads that chip substrate front has dielectric layer and chip internal metallic circuit is electrically connected with the dielectric layer are stated,
The second opening of the exposure weld pad is offered on the dielectric layer, the welding resisting layer and the pad are formed at the dielectric layer
On；The pad be directly arranged on the weld pad exposed or the welding resisting layer and the dielectric layer between be provided be electrically connected with described in
The metal of weld pad reroutes layer, and the pad is rerouted on layer located at the metal；Formed with around described on the dielectric layer
The annular groove of pad, the Polymer-supported pushing out ring extension are inserted in the annular groove.
3. the enhanced encapsulating structure of salient point according to claim 1, it is characterised in that：The substrate is chip substrate, institute
State and reroute layer formed with insulating barrier and metal on the chip substrate back side, the welding resisting layer and the pad are formed at the metal
Reroute on layer, institute is inserted formed with the annular groove around the pad, the Polymer-supported pushing out ring extension on the insulating barrier
State in annular groove.
4. the enhanced encapsulating structure of salient point according to claim 1, it is characterised in that：The substrate is packaging body, described
There is insulating barrier and metal to reroute layer, the welding resisting layer and the pad are formed at the metal and reroute layer on packaging body
On, insert the annular groove formed with the annular groove around the pad, the Polymer-supported pushing out ring extension on the insulating barrier
It is interior.
5. the enhanced encapsulating structure of salient point according to any one of Claims 1-4, it is characterised in that：First opening
Enhancement layer is equipped with the welding resisting layer of surrounding, the 3rd opening of the accommodating salient point, the polymerization are reserved with the enhancement layer
Gap described in thing support ring filling between the 3rd opening and the salient point, and coat the lateral surface of salient point on the enhancement layer.
6. the enhanced encapsulating structure of salient point according to claim 5, it is characterised in that：The enhancement layer thickness is 10-50 μ
M, its material are photoresist or dry film.
7. the enhanced encapsulating structure of salient point according to any one of Claims 1-4, it is characterised in that：The salient point is real
One kind in heart soldered ball, hollow soldered ball, plastics core soldered ball, copper core soldered ball, and the salient point is located on the pad, and wrap up institute
State pad.
8. the enhanced encapsulating structure of salient point according to claim 1, it is characterised in that：The Polymer-supported pushing out ring is by polymerizeing
Formed after thing adhesive Reflow Soldering.
9. the enhanced encapsulating structure of salient point according to claim 1, it is characterised in that：The diameter of first opening compares institute
It is big 10-100 μm to state pad diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201710694122.9A CN107564878B (en) | 2017-08-15 | 2017-08-15 | Salient point enhanced packaging structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710694122.9A CN107564878B (en) | 2017-08-15 | 2017-08-15 | Salient point enhanced packaging structure |
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| CN107564878A true CN107564878A (en) | 2018-01-09 |
| CN107564878B CN107564878B (en) | 2020-01-14 |
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Cited By (3)
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| WO2021237714A1 (en) * | 2020-05-29 | 2021-12-02 | 深圳市汇顶科技股份有限公司 | Chip encapsulation structure and method, and chip module |
| TWI761161B (en) * | 2021-03-25 | 2022-04-11 | 大陸商慶鼎精密電子（淮安）有限公司 | Exposure system, circuit board, method for making circuit board, backlight board, and display device |
| CN115881675A (en) * | 2023-02-08 | 2023-03-31 | 荣耀终端有限公司 | Packaging substrate, preparation method thereof, packaging structure and electronic equipment |
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| CN107564878B (en) | 2020-01-14 |
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