CN107557871B - Laser anneal device and method - Google Patents
Laser anneal device and method Download PDFInfo
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- CN107557871B CN107557871B CN201610516604.0A CN201610516604A CN107557871B CN 107557871 B CN107557871 B CN 107557871B CN 201610516604 A CN201610516604 A CN 201610516604A CN 107557871 B CN107557871 B CN 107557871B
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Abstract
The present invention provides a kind of laser anneal device and method, which includes: the laser light source subsystem, is controlled by the host, generates and exports laser；The temperature monitoring subsystem, the temperature at laser irradiating position described in monitoring wafer surface, and feed back to the host；The optical subsystem is controlled by the host, is carried out shaping and transmission to the laser of laser light source subsystem output, is obtained the hot spot of optical power detection；The spatial light intensity modulation subsystem, it is modulated by the laser that host control is emitted the optical subsystem, keep the light distribution for being incident to the hot spot at the silicon chip surface corresponding with the reflectivity of the silicon chip surface, so that absorbed energy is consistent at each facula position of silicon chip surface, and the energy can be determined according to the temperature monitored；Laser light source subsystem, optical subsystem and spatial light intensity modulation subsystem described in feedback control of the host according to the temperature monitoring subsystem.
Description
Technical field
The present invention relates to the annealing devices and method after silicon wafer manufacture field more particularly to a kind of silicon wafer photoetching.
Background technique
Under the promotion of Moore's Law, manufacture of microchips experienced fast development in past many decades.It is this lasting
Fast development be derived from chip size lasting diminution.Correspondingly, processing and manufacturing of this smaller size to chip
Technique proposes higher and higher difficulty and challenge.Traditional silicon wafer rapid thermal annealing mode has been difficult to meet 45nm and higher
The requirement of node.New annealing technology substitutes by numerous studies.
In recent years due to the development of laser application technique, laser annealing techniques have shown that good application prospect.Laser
The opposite conventional anneal of annealing, heat budget is small, and activation efficiency is high, can largely reduce the thermal diffusion of impurity, and drop
Low-heat strain.
After silicon wafer passes through photoetching process, different nanometers (nm) grade geometry knot will form at the different location on surface
Structure and material properties, cause inconsistent to the absorption of incident laser energy at the different location on surface, move back so as to cause laser
The temperature distribution evenness of fiery rear surface is deteriorated, i.e., so-called pattern effect.
As shown in Figure 1, for the structural schematic diagram of the silicon chip surface after the processing of specific photoetching process.It can see
It arrives, silicon chip surface has the composition of bare chip shown in a series of box of black.For the bare chip of formation, has receive on the surface
A series of specific space structures of rice (nm) grade space scale, and there is different material compositions in internal depth, such as
Shown in Fig. 2.Based on above-mentioned factor, according to EM theory, for the incident light with specific wavelength λ and incidence angle θ, silicon wafer table
Reflectivity R at faceθ, λ(x, y) is the function of position, wherein (x, y) indicates the position coordinates at silicon chip surface to be annealed.
In laser anneal process, for above-mentioned target silicon wafer, energy source is used a laser as, irradiates silicon wafer to be processed
Surface so that silicon wafer reach as defined in annealing temperature T0, realize target annealing.As noted previously, as reflectivity Rθ, λ(x,y)
It is the function of position, therefore causes to generate difference to the laser energy absorbed at a position, further results in silicon wafer to be processed not
Temperature Distribution with position there are certain range △ T, it is this as the reflectivity or absorptivity on surface it is different caused by
Temperature difference, commonly referred to as " pattern effect ".
Temperature non-uniformity caused by this pattern effect will generate the diffusion kinetics scholarship and moral conduct of the doping particle of otherness
Eventually to generate important influence to the consistency of device performance in silicon wafer.Therefore, in laser anneal process, figure is avoided
Case effect is maintained at temperature change △ T in one acceptable range and is an important issue.
It is also pointed out that:
Fig. 1 is to carry the silicon wafer schematic diagram of bare chip distribution after photoetching process, wherein circular with dotted
The part of pattern indicates silicon wafer；The rectangular part with grid shape pattern indicates bare chip:
Fig. 2 is the geometry and material properties schematic diagram of bare chip, and the picture left above indicates single bare chip, and top right plot indicates
The periodic spatial distribution of bare chip at silicon chip surface；Lower right gives in silicon wafer internal direction, four kinds of different materials
Attribute, A indicate total silicon material (Si), and B indicates that growth is by polysilicon (P-Si) above silicon materials, and the upper surface of C expression silicon materials are raw
Long to be covered with polysilicon (P-Si) again above by silica (SiO2), D indicates the growth of the upper surface of silicon materials by silica
(SiO2)。
In the prior art, US2013/0196455A1 is to utilize long wavelength CO2Laser, with the side of brewster angle incidence
Formula makes the R at different location selectively only for the polarised light on specific directionBrewsterAngle, λ(x, y) difference reduces,
To mitigate pattern effect.
In this scheme, there are the following problems:
1, it cannot be completely eliminated pattern effect: polarised light part and silicon chip surface phase to be processed on one side orthogonal direction
When interaction, still it can be partially absorbed；On the other hand, theoretic Brewster's angle can only be approached infinitely, and for tool
The hot spot for having certain space to be distributed, must have certain distribution, therefore in above-mentioned particular polarization near Brewster's angle
Incident light there is also pattern effects；
2, Technological adaptability is poor, and control freedom degree is low: for silicon chip surface pattern complicated and changeable, can not take corresponding
Disappear pattern effect measure.
Summary of the invention
The technical problem to be solved by the present invention is to pattern effect how is effectively treated.
In order to solve this technical problem, the present invention provides a kind of laser anneal devices, including host, laser light source point
System, optical subsystem, spatial light intensity modulation subsystem and temperature monitoring subsystem,
The laser light source subsystem, is controlled by the host, generates and exports laser；
The temperature monitoring subsystem, the temperature at laser irradiating position described in monitoring wafer surface, and feed back to described
Host；
The optical subsystem is controlled by the host, carries out shaping to the laser of laser light source subsystem output
And transmission, obtain the hot spot of optical power detection；
The spatial light intensity modulation subsystem is adjusted by the laser that host control is emitted the optical subsystem
System, so that the light distribution for the hot spot being incident at the silicon chip surface is corresponding with the reflectivity of the silicon chip surface, thus
So that absorbed energy is consistent at each facula position of silicon chip surface, and the energy can be true according to the temperature monitored
It is fixed；
Laser light source subsystem, optical subsystem described in feedback control of the host according to the temperature monitoring subsystem
With spatial light intensity modulation subsystem.
Optionally, the laser light source subsystem includes one or more laser, and each laser is by the host
Independent control.
Optionally, the optical subsystem includes:
Laser spot detection mechanism, the laser progress energy exported to the laser light source subsystem and corresponding facula position
It measures and feeds back to host；
Energy attenuation mechanism is controlled by the host, according to the measurement result of the laser spot detection mechanism, to the laser
The energy of the laser of light source subsystem output is controlled；
Beam-expanding collimation mechanism is controlled by the host, carries out hot spot shape to the laser after the energy attenuation mechanism controls
The control of shape；
And even ray machine structure, the laser facula after being controlled by host control shape carries out shaping, and then obtains
Uniform hot spot.
Optionally, the spatial light intensity modulation subsystem includes spatial light intensity modulator and the loading spatial light intensity modulation
The modulator loading stage of device, in which:
The spatial light intensity modulator, is controlled by the host, the uniform light that will be emitted after the optical subsystem
Spot transmission or reflection is to the silicon chip surface.
Optionally, the light transmittance T for the laser being emitted after the spatial light intensity modulatorθ,λ(x, y) and the silicon chip surface
Reflectivity Rθ,λ(x, y) is adapted, and meets following relationship:
Wherein, the light transmittance T of the laserθ,λ(x, y) refers to the laser being emitted from the spatial light intensity modulator and is incident to
The ratio between the laser of the spatial light intensity modulator, λ be incident light wavelength, θ be incident light incidence angle, (x, y) expression described in
Position coordinates at silicon chip surface.
Optionally, when annealing the spatial light intensity modulator and the silicon wafer by it is discrete be several space lattices, it is described
Reflectivity corresponding to adjacent space lattice point carries out the permitted maximum distance max of value (△ x, △ on spatial light intensity modulator
Y) it needs to meet:
Wherein, the △ x be the silicon wafer on adjacent space lattice point along X to distance, the △ y be the silicon wafer on phase
Adjacent space lattice along Y-direction distance, it is describedIt is characterized thermal diffusion length, is metD is thermal diffusivity, and τ is institute
State some time for exposure experienced at silicon chip surface.
Optionally, the host includes the laser light source control subsystem for controlling the laser light source subsystem, control institute
The optics control subsystem for stating optical subsystem and the spatial light intensity modulation control point for controlling the spatial light intensity modulation subsystem
System.
Optionally, the annealing device for improving anneal uniformity based on reflectivity distribution further includes silicon-chip loading platform,
The silicon slice loading drives the silicon wafer to be horizontally moved in the silicon-chip loading platform, and by host control, to make
The silicon chip surface can be spread by obtaining hot spot.
Optionally, the silicon-chip loading platform controls subsystem by silicon-chip loading platform and is controlled by the host.
Optionally, the silicon-chip loading platform can also be controlled by the host drives the silicon wafer progress vertically movable, with
Meet depth of focus demand.
Optionally, the spatial light intensity modulation subsystem further includes spatial light intensity modulation imaging unit, to by the sky
Between the modulated hot spot of light intensity modulator zoomed in or out.
Optionally, the laser anneal device further includes vibration mirror scanning subsystem, controls the relatively described silicon of the hot spot
Piece movement, enables the hot spot throughout the silicon chip surface.
The present invention also provides a kind of laser anneal methods, comprising the following steps:
Step 1, with proposed adoption annealing wavelength and laser light incident to silicon chip surface incidence angle, to picture on surface
Silicon wafer is annealed, and the reflectivity of the silicon chip surface is measured；
Step 2, production spatial light intensity modulator, make by the modulated laser light incident of the spatial light modulator to described
The light distribution of hot spot at silicon chip surface is corresponding with the reflectivity of the silicon chip surface, so that each hot spot of the silicon chip surface
Absorbed energy is consistent at position；
One silicon wafer with similar face pattern is uploaded to work stage by step 3；
Step 4, the control work stage movement, make the hot spot after the spatial light intensity modulator throughout entire silicon wafer
The annealing of the silicon wafer is completed on surface；
Step 5 repeats step 3, until completing the annealing of all silicon wafers with similar face pattern.
Optionally, the light transmittance T for the laser being emitted after the spatial light intensity modulatorθ,λ(x, y) and the silicon chip surface
Reflectivity Rθ,λ(x, y) is adapted, and meets following relationship:
Wherein, the light transmittance T of the laserθ,λ(x, y) refers to the laser being emitted from the spatial light intensity modulator and is incident to
The ratio between the laser of the spatial light intensity modulator, λ be incident light wavelength, θ be incident light incidence angle, (x, y) expression described in
Position coordinates at silicon chip surface.
Optionally, when annealing the spatial light intensity modulator and the silicon wafer by it is discrete be several space lattices, it is described
Reflectivity corresponding to adjacent space lattice point carries out the permitted maximum distance max of value (△ x, △ on spatial light intensity modulator
Y) it needs to meet:
Wherein, the △ x be the silicon wafer on adjacent space lattice point along X to distance, the △ y be the silicon wafer on phase
Adjacent space lattice along Y-direction distance, it is describedIt is characterized thermal diffusion length, is metD is thermal diffusivity, and τ is institute
State some time for exposure experienced at silicon chip surface.
Optionally, the step 4 further includes controlling the spatial light modulator to move synchronously with the work stage, make through
Hot spot after crossing the spatial light modulator spreads entire silicon chip surface.
The present invention proposes a kind of laser annealing apparatus and laser anneal method, and main contents are based on target silicon to be annealed
The reflectivity distribution of piece, using corresponding spatial light intensity modulation subsystem, the energy for absorbing silicon wafer to be annealed everywhere
Uniformity guarantees the consistency of device performance to eliminate pattern effect.
Detailed description of the invention
Fig. 1 is the schematic diagram of the silicon wafer after photoetching process in the prior art；
Fig. 2 is naked core sheet material and structural schematic diagram after photoetching process in the prior art；
Fig. 3 is the signal for improving the annealing device of anneal uniformity in an alternate embodiment of the present invention based on reflectivity distribution
Figure；
Fig. 4 is the schematic diagram of optical subsystem in an alternate embodiment of the present invention；
Fig. 5 (a) is the schematic diagram of intensity modulation subsystem in space in alternative embodiment of the present invention；
Fig. 5 (b) is the feature schematic diagram of space light intensity modulator in alternative embodiment of the present invention；
Fig. 6 be in alternative embodiment of the present invention temperature with the variation schematic diagram of heat source distance.
Specific embodiment
The annealing provided by the invention for improving anneal uniformity based on reflectivity distribution is filled below with reference to Fig. 1 to Fig. 6
It sets and is described in detail, be optional embodiment of the present invention, it is believed that those skilled in the art are not changing the present invention
In the range of spirit and content, can it be modified and be polished.
The present invention provides it is a kind of based on reflectivity distribution improve anneal uniformity annealing device, including host 000,
Laser light source subsystem 100, optical subsystem 200, spatial light intensity modulation subsystem 300 and temperature monitoring subsystem 400,
In:
The temperature monitoring subsystem 400, the temperature at monitoring wafer surface laser irradiation position, and feed back to the master
Machine；In other words, real-time monitoring silicon wafer to be processed (Wafer) surface laser irradiation area (Spot) temperature；It is further specific next
It says, is made of pyrometer or reflectivity detector, may be implemented to carry out the temperature of the silicon wafer upper surface at facula position real
When measure.Temperature signal is measured in real time, the foundation feedback as feedback control arrives host 000.
The laser light source subsystem 100 is controlled by the host 000, generates and export laser；It can be understood as using
In generation and control laser.The laser light source subsystem 100 includes one or more lasers, and each laser is by the master
Machine independent control.Signal is controlled according to provided by host 000 simultaneously, controlling subsystem C100 by laser light source may be implemented
Independent regulation is carried out to the power/energy of the exported laser of each laser, wavelength.In optional embodiment of the present invention, swash
The energy/power of light device is adjustable.
The optical subsystem 200 is controlled by the host 000, is swashed to 100 output of laser light source subsystem
Light carries out shaping and transmission, obtains the hot spot of uniform intensity；It is mainly used to carry out shaping to light beam and transports；
In optional embodiment of the present invention, the optical subsystem 200 includes:
The laser spot detection mechanism 2001 carries out energy and corresponding to the laser of the laser light source subsystem 100 output
Facula position measurement and feed back to host 000；
The energy attenuation mechanism 2002 is controlled by the host 000, the survey according to the laser spot detection mechanism 2001
Amount is as a result, control the energy of the laser of the laser light source subsystem 100 output；
The beam-expanding collimation mechanism 2003 carries out light spot shape to the laser after the energy attenuation mechanism 2002 control
Control.
The beam-expanding collimation mechanism 2003 is controlled by the host 000, is controlled the shape of laser facula；
The even ray machine structure 2004, the laser facula after being controlled by the host 000 control shape carry out shaping, into
And obtain uniform hot spot.
Based on visible above, each independent optical subsystem 200 includes: laser spot detection system 2001, by power meter
It is surveyed with energy measurings device and image acquisition device composition, the energy/powers that real-time monitoring laser can be passed through such as CCD with real-time
Relative position of the hot spot in silicon wafer is measured, these data are mutually input to host 000) in, feed back to slide glass bench control system
C400 realizes the annealing to entire silicon wafer；Energy attenuation system 2002 is added the side of polarization beam splitter prism by attenuator or wave plate
Formula is constituted, and by way of changing eyeglass transmitance or polarization direction, is realized to the energy for being incident on the surface silicon wafer (Wafer)
Carry out real-time control；Beam-expanding collimation system 2003 can be used simple lens or telescopic system and constitute, and realize to being irradiated to silicon wafer table
Hot spot (Spot) shape in face is controlled；Even photosystem 2004, can be used microlens array or integral bar construction, make shaping it
Hot spot afterwards is distributed with certain light intensity.Traditionally, the hot spot after optical subsystem generally has linear light intensity equal
Even distribution, aspect ratio with higher is that is, relatively narrow in a scanning direction, longer in non-scan direction.
The spatial light intensity modulation subsystem 300 is emitted the optical subsystem 200 by the host 000 control
Laser is modulated, and keeps the light distribution for being incident to the hot spot at the silicon chip surface opposite with the reflectivity of the silicon chip surface
It answers, so that absorbed energy is consistent at each facula position of the silicon chip surface, and the energy can be according to being monitored
Temperature determines；
Furthermore, it is understood that the spatial light intensity modulation subsystem 300 includes spatial light intensity in optional embodiment of the present invention
Modulator 3001 and modulator loading stage 3002, in which:
The spatial light intensity modulator 3001 is controlled by the host 000, equal by what is be emitted after the optical subsystem
Even hot spot transmission or reflection is to the silicon chip surface；
The modulator loading stage 3002 loads the spatial light intensity modulator 3001, and is controlled by the host 000
It is moved.
When the uniform light spots after 200 shaping of optical subsystem, by spatial light intensity modulator 3001 transmission or
It reflexes at silicon chip surface to be annealed, forms the optical field distribution of spatial non-uniform；By host 000 to 500 He of silicon-chip loading platform
The modulator slide holder 3002 of spatial light intensity modulator 3001 synchronizes movement, makes to spread by modulated Irregular facula
Silicon chip surface to be annealed completes annealing process.
Fig. 5 (b) gives the substantially schematic diagram of spatial light intensity modulator 3001.Image to left provides spatial light intensity modulator
The variation (being indicated with gray values size) of 3001 light transmittance；Right side picture gives substantially space layout and space lattice
Critical size.
Functionally, spatial light intensity modulator 3001 is between silicon wafer and optical subsystem 200, and purpose is to by light
Subsystem 200 is formed by uniform light spots, by the variation of space light transmittance, is formed at silicon chip surface and silicon chip surface
Reflectivity Rθ, λ(x, y) corresponding light distribution hot spot, to guarantee that the energy absorbed at silicon chip surface each position is consistent
's.
In other optional embodiments of the invention, spatial light emphasizes subsystem 300, can also increase with telecentricity property
And with certain multiplying power spatial light intensity modulate imaging unit 3003, for by modulated hot spot carry out reduce or
Person's amplification, is easy to the production of spatial light intensity modulator 3001.
As it can be seen that in optional embodiment of the present invention, the light transmittance for the laser being emitted after the spatial light intensity modulator
Tθ,λThe reflectivity R of (x, y) and the silicon chip surfaceθ,λ(x, y) is adapted, and meets following relationship:
Wherein, the light transmittance T of the laserθ,λ(x, y) refers to the laser being emitted from the spatial light intensity modulator 3001 and enters
It is incident upon the ratio between the laser of the spatial light intensity modulator 3001, λ is the wavelength of incident light, and θ is the incidence angle of incident light, (x, y)
Indicate the position coordinates at the silicon chip surface.
For geometry and size, the geometry and size of silicon wafer to be annealed are depended primarily on, further, due to
Behind spatial light intensity modulator, the optical imaging system to zoom in or out can be placed, but must assure that silicon wafer upper surface
There are one-to-one mapping relations with spatial light intensity modulator face.
For the space lattice critical size of spatial light intensity modulator 3001, it is defined as at silicon chip surface, spatial light intensity
Adjacent space lattice point reflectivity carries out the allowed maximum distance of value in modulator, i.e. max (△ x, △ y) need to meet following
Relationship:
Wherein, the △ x be the silicon wafer on adjacent space lattice point along X to distance, the △ y be the silicon wafer on phase
Adjacent space lattice along Y-direction distance, it is describedIt is characterized thermal diffusion length, is metD is thermal diffusivity, and τ is institute
State some time for exposure experienced at silicon chip surface.Theoretically, in feature thermal diffusion lengthIn distance, temperature is recognized
To be uniform.As shown in fig. 6, in practical applications, under the impulse action of 300ns, when temperature is close to 1680K, feature
Thermal diffusion length is about 2um or so, and in 0.2um distance, temperature difference is less than 10K.So the space point after discretization
Resolution must assure that the distance of less than or equal to 0.1-1 feature thermal diffusion length.
In the most of optional embodiments of the present invention, feedback control institute of the host according to the temperature monitoring subsystem
Laser light source subsystem, optical subsystem and spatial light intensity modulation subsystem are stated, spatial light intensity modulation point therein is especially controlled
System.
In optional embodiment of the present invention, the laser anneal device further includes silicon-chip loading platform 500, the silicon wafer
It is loaded into the silicon-chip loading platform 500, and drives the silicon wafer to be horizontally moved by the host 00 control, so that light
Spot can spread the silicon chip surface.The silicon-chip loading platform 500 can also be controlled by the host drives the silicon wafer to carry out
It is vertically movable, to meet depth of focus demand.Specifically, slide holder 500 can be with the fortune of free movement in horizontal plane by least having
Dynamic platform is constituted, and carrying silicon wafer may be implemented, and is made silicon wafer relative to spot motion, is moved back throughout the realization of entire silicon wafer to entire silicon wafer
Fire.Simultaneously should also, satisfaction be maintained at silicon wafer within the depth of focus of optical subsystem.
In optional embodiment of the present invention, annealing device can also make hot spot relative to silicon wafer by modes such as galvanometers
Movement spreads entire silicon wafer, realizes the annealing of single silicon wafer.For concrete example, laser anneal device further includes vibration mirror scanning
Subsystem controls the relatively described silicon wafer movement of the hot spot, enables the hot spot throughout the silicon chip surface.
For in the above alternative embodiment, the host includes the laser light source control for controlling the laser light source subsystem
The spatial light of subsystem, the optics control subsystem of the control optical subsystem and the control spatial light intensity modulation subsystem
Strong modulation control subsystem.
It may also be noted that and be used as a kind of equipment, general point that should also have some other equipment that should have
System, such as environmental Kuznets Curves subsystem, frame subsystem, chip transmission subsystem etc., and subsystem is controlled accordingly, at this
In no longer describe one by one.
The present invention also provides a kind of laser anneal methods, comprising the following steps:
Step 1, with proposed adoption annealing wavelength and laser light incident to silicon chip surface incidence angle, to picture on surface
Silicon wafer is annealed, and the reflectivity of the silicon chip surface is measured；
Step 2, production spatial light intensity modulator, make by the modulated laser light incident of the spatial light modulator to described
The light distribution of hot spot at silicon chip surface is corresponding with the reflectivity of the silicon chip surface, so that each hot spot of the silicon chip surface
Absorbed energy is consistent at position；
One silicon wafer with similar face pattern is uploaded to work stage by step 3；
Step 4, the control work stage movement, make the hot spot after the spatial light intensity modulator throughout entire silicon wafer
The annealing of the silicon wafer is completed on surface；
Step 5 repeats step 3, until completing the annealing of all silicon wafers with similar face pattern.
In optional embodiment of the present invention, the light transmittance T for the laser being emitted after the spatial light intensity modulatorθ,λ(x,
Y) with the reflectivity R of the silicon chip surfaceθ,λ(x, y) is adapted, and meets following relationship:
Wherein, the light transmittance T of the laserθ,λ(x, y) refers to the laser being emitted from the spatial light intensity modulator and is incident to
The ratio between the laser of the spatial light intensity modulator, λ be incident light wavelength, θ be incident light incidence angle, (x, y) expression described in
Position coordinates at silicon chip surface.
In optional embodiment of the present invention, when annealing the spatial light intensity modulator and the silicon wafer by it is discrete be several
Space lattice, on the spatial light intensity modulator reflectivity corresponding to adjacent space lattice point carry out value it is permitted it is maximum away from
It needs to meet from max (△ x, △ y):
Wherein, the △ x be the silicon wafer on adjacent space lattice point along X to distance, the △ y be the silicon wafer on phase
Adjacent space lattice along Y-direction distance, it is describedIt is characterized thermal diffusion length, is metD is thermal diffusivity, and τ is institute
State some time for exposure experienced at silicon chip surface.
In optional embodiment of the present invention, the step 4 further includes controlling the spatial light modulator and the work stage
It moves synchronously, makes the hot spot after the spatial light modulator throughout entire silicon chip surface.
In conclusion the present invention proposes a kind of laser annealing apparatus and laser anneal method, main contents are based on mesh
The reflectivity distribution for marking silicon wafer to be annealed makes silicon wafer to be annealed everywhere using corresponding spatial light intensity modulation subsystem
The energy uniformity of absorption guarantees the consistency of device performance to eliminate pattern effect.
Claims (16)
1. a kind of laser anneal device, it is characterised in that: including host, laser light source subsystem, optical subsystem, spatial light intensity
Modulation subsystem and temperature monitoring subsystem, in which:
The laser light source subsystem, is controlled by the host, generates and exports laser；
The temperature monitoring subsystem, the temperature at laser irradiating position described in monitoring wafer surface, and feed back to the host；
The optical subsystem is controlled by the host, carries out shaping and biography to the laser of laser light source subsystem output
It is defeated, obtain the hot spot of optical power detection；
The spatial light intensity modulation subsystem is modulated by the laser that host control is emitted the optical subsystem,
Keep the light distribution for being incident to the hot spot at the silicon chip surface corresponding with the reflectivity of the silicon chip surface, so that institute
State that absorbed energy at each facula position of silicon chip surface is consistent, and the energy can be determined according to the temperature monitored；
Laser light source subsystem, optical subsystem and sky described in feedback control of the host according to the temperature monitoring subsystem
Between intensity modulation subsystem.
2. laser anneal device as described in claim 1, it is characterised in that: the laser light source subsystem include one or
Multiple lasers, each laser is by the host independent control.
3. laser anneal device as described in claim 1, it is characterised in that: the optical subsystem includes:
Laser spot detection mechanism carries out the measurement of energy and corresponding facula position to the laser of laser light source subsystem output
And feed back to host；
Energy attenuation mechanism is controlled by the host, according to the measurement result of the laser spot detection mechanism, to the laser light source
The energy of the laser of subsystem output is controlled；
Beam-expanding collimation mechanism is controlled by the host, carries out light spot shape to the laser after the energy attenuation mechanism controls
Control；
And even ray machine structure, the laser facula after being controlled by host control shape carries out shaping, and then obtains uniformly
Hot spot.
4. laser anneal device as described in claim 1, it is characterised in that: the spatial light intensity modulation subsystem includes space
Light intensity modulator and the modulator loading stage for loading the spatial light intensity modulator, in which:
The spatial light intensity modulator, is controlled by the host, and the uniform hot spot being emitted after the optical subsystem is saturating
Penetrate or reflex to the silicon chip surface.
5. laser anneal device as claimed in claim 4, which is characterized in that is be emitted after the spatial light intensity modulator swashs
The light transmittance T of lightθ,λThe reflectivity R of (x, y) and the silicon chip surfaceθ,λ(x, y) is adapted, and meets following relationship:
Wherein, the light transmittance T of the laserθ,λ(x, y) refers to the laser being emitted from the spatial light intensity modulator and is incident to described
The ratio between the laser of spatial light intensity modulator, λ are the wavelength of incident light, and θ is the incidence angle of incident light, and (x, y) indicates the silicon wafer
Position coordinates at surface.
6. laser anneal device as described in claim 4 or 5, which is characterized in that when annealing the spatial light intensity modulator and
The silicon wafer by it is discrete be several space lattices, reflectivity corresponding to adjacent space lattice point on the spatial light intensity modulator
Carrying out the permitted maximum distance max of value (△ x, △ y) needs to meet:
Max (△ x, △ y)≤(0.1~1) * l；
Wherein, the △ x be the silicon wafer on adjacent space lattice point along X to distance, the △ y be the silicon wafer on adjacent vacant
Between lattice point along the distance of Y-direction, the l is characterized thermal diffusion length, meetsD is thermal diffusivity, and τ is the silicon wafer
Some time for exposure experienced at surface.
7. laser anneal device as described in claim 1, it is characterised in that: the host includes controlling the laser light source point
Laser light source control subsystem, the optics control subsystem of the control optical subsystem and the control spatial light intensity of system
The spatial light intensity modulation control subsystem of modulation subsystem.
8. laser anneal device as described in claim 1, it is characterised in that: further include silicon-chip loading platform, the silicon slice loading
The silicon wafer is driven to be horizontally moved in the silicon-chip loading platform, and by host control, so that hot spot can be all over
And the silicon chip surface.
9. laser anneal device as claimed in claim 8, it is characterised in that: the silicon-chip loading platform passes through the control of silicon-chip loading platform
Subsystem processed is controlled by the host.
10. laser anneal device as claimed in claim 8, it is characterised in that: the silicon-chip loading platform can also be by the master
It is vertically movable that machine control drives the silicon wafer to carry out, to meet depth of focus demand.
11. laser anneal device as claimed in claim 4, it is characterised in that: the spatial light intensity modulation subsystem further includes
Spatial light intensity modulates imaging unit, zooms in or out to the hot spot after the spatial light intensity modulators modulate.
12. laser anneal device as described in claim 1, which is characterized in that further include vibration mirror scanning subsystem, described in control
The relatively described silicon wafer movement of hot spot, enables the hot spot throughout the silicon chip surface.
13. a kind of laser anneal method, which comprises the following steps:
Step 1, with proposed adoption annealing wavelength and laser light incident to silicon chip surface incidence angle, to the silicon wafer with picture on surface
It anneals, measures the reflectivity of the silicon chip surface；
Step 2, production spatial light intensity modulator, make by the modulated laser light incident of the spatial light modulator to the silicon wafer
The light distribution of hot spot at surface is corresponding with the reflectivity of the silicon chip surface, so that each facula position of the silicon chip surface
It is consistent to locate absorbed energy；
One silicon wafer with similar face pattern is uploaded to work stage by step 3；
Step 4, the control work stage movement, make the hot spot after the spatial light intensity modulator throughout entire silicon wafer table
The annealing of the silicon wafer is completed in face；
Step 5 repeats step 3, until completing the annealing of all silicon wafers with similar face pattern.
14. laser anneal method as claimed in claim 13, it is characterised in that: be emitted after the spatial light intensity modulator
The light transmittance T of laserθ,λThe reflectivity R of (x, y) and the silicon chip surfaceθ,λ(x, y) is adapted, and meets following relationship:
Wherein, the light transmittance T of the laserθ,λ(x, y) refers to the laser being emitted from the spatial light intensity modulator and is incident to described
The ratio between the laser of spatial light intensity modulator, λ are the wavelength of incident light, and θ is the incidence angle of incident light, and (x, y) indicates the silicon wafer
Position coordinates at surface.
15. laser anneal method according to claim 13 or 14, which is characterized in that spatial light intensity modulator when annealing
With the silicon wafer by it is discrete be several space lattices, reflection corresponding to adjacent space lattice point on the spatial light intensity modulator
Rate, which carries out the permitted maximum distance max of value (△ x, △ y), to be needed to meet:
Max (△ x, △ y)≤(0.1~1) * l；
Wherein, the △ x be the silicon wafer on adjacent space lattice point along X to distance, the △ y be the silicon wafer on adjacent vacant
Between lattice point along the distance of Y-direction, the l is characterized thermal diffusion length, meetsD is thermal diffusivity, and τ is the silicon wafer
Some time for exposure experienced at surface.
16. laser anneal method as claimed in claim 13, which is characterized in that the step 4 further includes controlling the space
Optical modulator is moved synchronously with the work stage, makes the hot spot after the spatial light modulator throughout entire silicon chip surface.
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