CN107543977A - A kind of isotropism emf sensor - Google Patents

A kind of isotropism emf sensor Download PDF

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Publication number
CN107543977A
CN107543977A CN201710899467.8A CN201710899467A CN107543977A CN 107543977 A CN107543977 A CN 107543977A CN 201710899467 A CN201710899467 A CN 201710899467A CN 107543977 A CN107543977 A CN 107543977A
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CN
China
Prior art keywords
opening
screen layer
metal screen
isotropism
electromagnetic field
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Pending
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CN201710899467.8A
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Chinese (zh)
Inventor
上官云祺
夏震宇
杨明
袁建生
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ZHEJIANG TIANCHAUNG XINCE COMMUNICATION TECHNOLOGY Co Ltd
Tsinghua University
Original Assignee
ZHEJIANG TIANCHAUNG XINCE COMMUNICATION TECHNOLOGY Co Ltd
Tsinghua University
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Priority to CN201710899467.8A priority Critical patent/CN107543977A/en
Publication of CN107543977A publication Critical patent/CN107543977A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a kind of isotropism emf sensor, mainly it is made up of at least one electromagnetic field sensing unit, electromagnetic field sensing unit is the multiturn coil winding wrapped up by metal screen layer, metal screen layer symmetrically opens up the first opening and the second opening, metal screen layer is divided into two sections of independent regions by the first opening and the second opening, first opening and the second opening connect first lead-out terminal and the second lead-out terminal respectively, the 3rd opening and the 4th opening are symmetrically opened up in the perpendicular both sides of metal screen layer and the first opening and the second opening line, every section of region division is two cross-talk regions by the 3rd opening and the 4th opening, interconnection has low-resistance circuit to two sections of independent subregions end to end, form 8-shaped loop.A kind of isotropism emf sensor of the present invention, solves the defects of emf sensor electric field measurement can decline rapidly to poor anti jamming capability, the accuracy of measurement in magnetic field with the increase of field frequency and amplitude.

Description

A kind of isotropism emf sensor
Technical field
The present invention relates to electromagnetic field measurementses technical field, more specifically, it relates to which a kind of isotropism electromagnetic field senses Device.
Background technology
Current existing electromagnetic field measurementses technology has many different detection methods to the electromagnetic field of 3Hz-3KHz frequency ranges, leads to It is low frequency often to define 3Hz-3KHz frequency ranges.The principle of electric field (E) sensor is typically based on capacitive element, such as parallel plate capacitance Device;The principle of magnetic field (B) sensor is typically that coil windings are based on induced-current caused by Faraday's electromagnetic induction law.In order to Enable coil windings that the influence of external electrical field, generally use metal screen layer parcel coil windings, and metallic shield is immunized An opening can be set on layer prevents the magnetic field of change from producing induced-current in screen layer.
As shown in figure 1, having electric field and the magnetic field that some probes can measure low frequency simultaneously, sensed used in these probes Unit is the coil that a circle carries two openings, and aperture position is relative with coil diameter.When measuring electromagnetic field, coil is drawn respectively Two opening output signals enter respective signal processing circuit;The output signal of signal processing circuit respectively with magnetic field (B)And electric field(E)Amplitude in proportion.But the sensing unit has the obvious disadvantage that:I.e. the sensor structure can be used Measurement in electric field and magnetic field, but electric field and magnetic field can not be measured simultaneously, and because being single-turn circular coil, sensor is to low frequency Field sensitivity is low, it is therefore desirable to which the signal processing circuit of complex designing is to strengthen output signal.For disadvantages mentioned above, these probes Sensing unit be designed as the coil windings being made up of multiturn coil, and the metal screen layers composition with two openings.
Based on isotropism emf sensor made of above-mentioned electromagnetic field sensing unit scheme, sensed by three electromagnetic fields Unit forms;And each electromagnetic field sensing unit is the multicircuit winding coil wrapped up by metal screen layer, on metal screen layer The relative position of diameter has opened up two openings;Metal screen layer is divided into two sections of independent regions by the position of opening, The terminal in each region is provided with lead-out terminal;One of terminal is used to export the induced electricity in the coil windings in measurement magnetic field Stream, another terminal is used to export the induced voltage on screen layer, and another of metal screen layer functions as electric field survey Quantity sensor is used to measure electric field.
Above-mentioned isotropism emf sensor can measure electric field and magnetic field simultaneously, and not need complicated signal Process circuit;But this sensor still suffers from poor anti jamming capability of the electric field measurement to magnetic field of sensor, accuracy of measurement The defects of declining rapidly with the increase of field frequency and amplitude.
Therefore need to propose a kind of new scheme to solve this problem.
The content of the invention
In view of the deficienciess of the prior art, it is an object of the invention to provide a kind of isotropism emf sensor, Emf sensor electric field measurement is solved to the poor anti jamming capability in magnetic field, accuracy of measurement with the increasing of field frequency and amplitude Add the defects of declining rapidly.
The present invention above-mentioned technical purpose technical scheme is that:A kind of isotropism electromagnetic field passes Sensor, mainly it is made up of at least one electromagnetic field sensing unit, each electromagnetic field sensing unit includes metal screen layer, quilt Metal screen layer parcel multiturn coil winding, symmetrically offered on the metal screen layer the first opening and second opening with Multiturn coil winding is exposed, metal screen layer is divided into two sections of independent regions by the first opening and the second opening, in institute State the first opening and the second opening be connected to for export on multiturn coil winding faradic first lead-out terminal and For exporting the second lead-out terminal of induced voltage on metal screen layer, the perpendicular institute with the first opening and the second opening line The both sides for stating metal screen layer symmetrically offer the 3rd opening and the 4th opening so that the multiturn coil winding is exposed, and described the Two sections of independent region divisions are respectively two sections of independent subregions by three openings and the 4th opening;In same independent region, 8-shaped loop is formed between two sections of independent subregions by being provided with the intersecting connection of low-resistance circuit end to end.
By using above-mentioned technical proposal, in the prior art, two are provided with the case where field frequency and amplitude become big Induced-current can be still produced in the metal screen layer of opening, in this case, is measuring the second opening of the second lead-out terminal There can be a displacement current, and a voltage drop is produced on its sampling resistor, but this voltage drop is due to that magnetic field produces Rather than electric field so that electric field measurement is inaccurate;And the above-mentioned technical proposal of the present invention, will by using low-resistance circuit Interconnection forms 8-shaped loop to two sections of independent subregions end to end, according to the law of electromagnetic induction, point in each 8-shaped loop Do not produce and cancelled each other clockwise with electric current counterclockwise, two electric currents, electric current would not be produced, i.e., will not on sampling resistor Voltage drop is produced because of induced-current caused by magnetic field;So that the anti-magnetic interference energy of the electric field measurement of emf sensor Power is strong, can simultaneously, it is independent, accurately measure electric field and magnetic field.
The present invention is further arranged to:In same independent region, the 8-shaped loop includes two loops, and two The individual loop area equation, and face normal orientation is opposite.
By using above-mentioned technical proposal, the magnetic flux of the metal screen layer institute envelope surface product in each 8-shaped loop is kept not Become, i.e., induced-current will not be produced in metal screen layer, so as to avoid the pseudo- pressure drop on electric field measurement sampling resistor, thus obtain Very strong diamagnetic field interference performance is arrived.
The present invention is further arranged to:The electromagnetic field sensing unit has three, three electromagnetic field sensing units two Two is orthogonal.
The present invention is further arranged to:The electromagnetic field sensing unit is circle, and adjacent two first opening, second open Central angle corresponding to mouth, the 3rd opening and the 4th opening is 90 degree.
The present invention is further arranged to:The electromagnetic field sensing unit is rectangle, first opening, the second opening, the The position of three openings and the 4th opening is at the center of each edge.
The present invention is further arranged to:The number of turn of the coil windings is 12 circles.
In summary, the invention has the advantages that:By using low-resistance circuit by two sections of independent subregion heads Tail interconnection forms 8-shaped loop, according to the law of electromagnetic induction, the metal screen layer institute envelope surface product in each 8-shaped loop Magnetic flux keep it is constant, i.e., induced-current will not be produced in metal screen layer, so as to avoid on electric field measurement sampling resistor because Induced-current caused by magnetic field and produce voltage drop;So that the diamagnetic field interference performance of the electric field measurement of emf sensor is strong, Can simultaneously, it is independent, accurately measure electric field and magnetic field.
Brief description of the drawings
Fig. 1 is the structural representation of prior art;
Fig. 2 is the structural representation of the electromagnetic field sensing unit of the present embodiment one;
Fig. 3 is the structural representation of the emf sensor of the present embodiment one;
Fig. 4 is the structural representation of the electromagnetic field sensing unit of the present embodiment two.
In figure:1st, electromagnetic field sensing unit;11st, metal screen layer;12nd, coil windings;2nd, the first opening;3rd, second open Mouthful;4th, first lead-out terminal;5th, the second lead-out terminal;6th, the 3rd opening;7th, the 4th opening;8th, low-resistance circuit;9th, region;91、 Subregion;10th, 8-shaped loop;101st, loop.
Embodiment
With reference to the accompanying drawings and examples, the present invention will be described in detail.
Embodiment one:A kind of isotropism emf sensor, as shown in figure 1, mainly by three electromagnetic field sensing units 1 Composition, the multiturn coil winding 12 that each electromagnetic field sensing unit 1 includes metal screen layer 11, wrapped up by metal screen layer 11, The first opening 2 and the second opening 3 are symmetrically offered on metal screen layer 11 so that multiturn coil winding 12 is exposed, is opened by first Metal screen layer 11 is divided into two sections of symmetrical and independent regions 9 by the opening 3 of mouth 2 and second, in the first opening 2 and the second opening 3 are connected to for exporting on multiturn coil winding 12 faradic first lead-out terminal 4 and for exporting metallic shield Second lead-out terminal 5 of induced voltage on layer 11, and a sampling resistor R is connected with the second 3 both ends of opening, for producing voltage Drop.The measurement direction of electric-field sensor and magnetic field sensor is marked in Fig. 1, the induced-current that magnetic field is triggered has passed through metal screen Layer 11 and sampling resistor R are covered, a displacement current is generated at the opening of metal screen layer 11 first 2;In some low-frequency ranges Under magnetic field environment(Such as 10 hertz), the first opening 2 and the second opening 3 are it is considered that open circuit, now thinks in metal screen layer 11 There is no induced-current to form loop, thus do not influence the measurement of electric field;But when magnetic field environment is changed into high frequency(It is more than 3K hertz) Afterwards, the capacitive reactances at the first opening 2 and the second opening 3 can reduce as the change of field frequency is big, now will be the A displacement current is formed at one opening 2, this displacement current can form loop by metal screen layer 11 and sampling resistor R, A pseudo- voltage drop is produced on sampling resistor R, influences the measurement of electric field.
To improve the diamagnetic field interference performance of electric field measurement, as shown in Fig. 2 connect with the first opening 2 and the second opening 3 again The both sides of the perpendicular metal screen layer 11 of line symmetrically offer the 3rd opening 6 and the 4th opening 7 with by the multiturn coil around Group 12 is exposed, and two sections of independent regions 9 are divided into two sections of independent subregions 91 by the 3rd opening 6 and the 4th opening 7 again respectively; In same independent region 9, intersected end to end between two sections of independent subregions 91 and be connected with low-resistance circuit 8, form 8 words Shape loop 10.According to the law of electromagnetic induction, the magnetic flux of 11 envelope surface products of metal screen layer in each 8-shaped loop 10 is kept not Become, i.e., will not produce induced-current in metal screen layer 11, sampling resistor R is upper because of magnetic field generation during so as to avoid electric field measurement Induced-current and produce voltage drop;So that the diamagnetic field interference performance enhancing of the electric field measurement of emf sensor, and can be same When, independence, accurately measure electric field and magnetic field.
It is furthermore preferred that in same independent region 9,8-shaped loop 10 includes two loops 101, two closings The area equation of loop 101, and face normal orientation is opposite.
Electromagnetic field sensing unit 1 is shaped as circle, and size is diameter 10cm, and the adjacent opening 3 of two first opening 2, second, Central angle corresponding to 3rd opening 6 and the 4th opening 7 is 90 degree, and the number of turn of coil windings 12 is 12 circles, and low-resistance circuit 8 is copper Wire, metal screen layer 11 use copper foil.
In the isotropism emf sensor of the present invention, as shown in Figure 2 and Figure 3, three electromagnetic field sensing units 1 are two-by-two Orthogonal, the opening 6 of first the 2, second opening of opening 3, the 3rd and the 4th opening 7 are used as the electromagnetic field sensing units 1 of pairwise orthogonal Tie point.
By the present invention in that by two sections of independent subregions 91, interconnection forms 8-shaped loop end to end with low-resistance circuit 8 10, reduce in magnetic field environment(Without electric field)Voltage drop on middle electric-field sensor sampling resistor R.In this way, this hair The diamagnetic field energy power of electric-field sensor in the electromagnetic field sensing unit 1 of bright proposition has obtained significant raising.Even if because system Make technological reason, two loops 101 in each 8-shaped loop 10 are unequal, induced-current be present in metal screen layer 11, The current loop in the 8-shaped loop 10 with the presence of low-resistance is remained on, voltage drop can't be produced on sampling resistor R and changed The result of electric field measurement.
Embodiment two:A kind of isotropism emf sensor, as shown in figure 4, the difference from embodiment one is:Electricity Magnetic field sensing cell 1 is rectangle, and the position of the opening 6 of first the 2, second opening of opening the 3, the 3rd and the 4th opening 7 is in each edge Center.
Described above is only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned implementation Example, all technical schemes belonged under thinking of the present invention belong to protection scope of the present invention.It should be pointed out that for the art Those of ordinary skill for, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications It should be regarded as protection scope of the present invention.

Claims (6)

  1. A kind of 1. isotropism emf sensor, mainly by least one electromagnetic field sensing unit(1)Composition, its feature exist In:Each electromagnetic field sensing unit(1)Including metal screen layer(11), by metal screen layer(11)The multiturn coil of parcel Winding(12), in the metal screen layer(11)On symmetrically offer the first opening(2)With the second opening(3)With by multiturn coil Winding(12)It is exposed, by the first opening(2)With the second opening(3)By metal screen layer(11)It is divided into two sections of independent regions (9), in the described first opening(2)With the second opening(3)It is connected to for exporting multiturn coil winding(12)Upper induced electricity The first lead-out terminal of stream(4)With for exporting metal screen layer(11)Second lead-out terminal of upper induced voltage(5), with first Opening(2)With the second opening(3)The perpendicular metal screen layer of line(11)Both sides symmetrically offer the 3rd opening(6) With the 4th opening(7)With by the multiturn coil winding(12)It is exposed, the 3rd opening(6)With the 4th opening(7)Respectively will Two sections of independent regions(9)It is divided into two sections of independent subregions(91);Same independent region(9)In, two sections of independent sons Region(91)Between end to end by being provided with low-resistance circuit(8)Intersecting connection, forms 8-shaped loop(10).
  2. A kind of 2. isotropism emf sensor according to claim 1, it is characterised in that:Same independent region (9)In, the 8-shaped loop(10)Including two loops(101), two loops(101)Area equation, and Face normal orientation is opposite.
  3. A kind of 3. isotropism emf sensor according to claim 1 or 2, it is characterised in that:The electromagnetic field passes Feel unit(1)There are three, three electromagnetic field sensing units(1)Pairwise orthogonal.
  4. A kind of 4. isotropism emf sensor according to claim 1 or 2, it is characterised in that:The electromagnetic field passes Feel unit(1)For circle, adjacent two first opening(2), second opening(3), the 3rd opening(6)With the 4th opening(7)Institute Corresponding central angle is 90 degree.
  5. A kind of 5. isotropism emf sensor according to claim 1 or 2, it is characterised in that:The electromagnetic field passes Feel unit(1)For rectangle, first opening(2), second opening(3), the 3rd opening(6)With the 4th opening(7)Position it is equal At the center of each edge.
  6. A kind of 6. isotropism emf sensor according to claim 1 or 2, it is characterised in that:The coil windings (12)The number of turn be 12 circles.
CN201710899467.8A 2017-09-28 2017-09-28 A kind of isotropism emf sensor Pending CN107543977A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115117629A (en) * 2022-08-09 2022-09-27 沈阳铁路信号有限责任公司 Loop antenna shielding structure

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CN105470087A (en) * 2014-09-11 2016-04-06 中微半导体设备(上海)有限公司 Inductively coupled plasma processing device
CN105738838A (en) * 2016-04-14 2016-07-06 中国科学院上海微系统与信息技术研究所 Superconducting quantum interference device gradiometer and height-balanced magnetic field detection method

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US4023093A (en) * 1975-10-20 1977-05-10 The Narda Microwave Corporation Magnetic field radiation detector
CA1060099A (en) * 1977-01-26 1979-08-07 Narda Microwave Corporation (The) Magnetic field radiation detector
JPH04246331A (en) * 1991-01-31 1992-09-02 Shimadzu Corp Mri antenna coil
US5300885A (en) * 1992-06-05 1994-04-05 Flam & Russell, Inc. Field probe for measuring vector components of an electromagnetic field
US6285188B1 (en) * 1998-02-25 2001-09-04 Kabushiki Kaisha Toshiba Self-shielded coil with non-inductive winding
US20080262628A1 (en) * 2004-01-12 2008-10-23 Angiomed Gmbh & Co. Medizintechnik Kg Mri Compatible Implant Comprising Electrically Conductively Closed Loops
WO2006105184A1 (en) * 2005-03-30 2006-10-05 Silicon Laboratories Inc. Magnetically differential inductors and associated methods
CN102084439A (en) * 2008-05-29 2011-06-01 意法爱立信有限公司 Radio frequency eight-shaped balun
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CN103487770A (en) * 2013-04-19 2014-01-01 北京航空航天大学 Passive detection device for measuring full tensor information of space magnetic field gradient
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115117629A (en) * 2022-08-09 2022-09-27 沈阳铁路信号有限责任公司 Loop antenna shielding structure

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