CN107543626A - A kind of temperature sensors of high precision without calibration - Google Patents
A kind of temperature sensors of high precision without calibration Download PDFInfo
- Publication number
- CN107543626A CN107543626A CN201710554271.5A CN201710554271A CN107543626A CN 107543626 A CN107543626 A CN 107543626A CN 201710554271 A CN201710554271 A CN 201710554271A CN 107543626 A CN107543626 A CN 107543626A
- Authority
- CN
- China
- Prior art keywords
- amplifier
- resistance
- high precision
- temperature sensors
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Measuring Temperature Or Quantity Of Heat (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of temperature sensors of high precision without calibration, it is characterized in that the temperature sensors of high precision is made up of two parts, Part I is the reference voltage VREF for producing two accurate VBE voltages and not varying with temperature, Part II is to amplify VBE voltages by amplifier, output TSVIP and TSVIN give ADC, then by configuring different TS_TM<1∶0>, ADC measures be averaging again respectively, further eliminates error component；Wherein, Part I circuit includes bipolar transistor chopper amplifier, current mirroring circuit, resistor voltage divider circuit and RC filter circuits；Part II circuit is made up of amplifier.The present invention need not calibrate can and realize ± 1 DEG C of temperature survey, greatly improve the measurement accuracy of temperature sensor.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to temperature sensor technology in piece.
Background technology
With the unprecedented need of the raising of integrated circuit processing technique, the arrival of the Internet of things era and portable type electronic product
Ask, development of the on-chip system constantly to high frequency, high integration, accelerate the lifting of chip temperature rapidly, temperature change is to core
Piece performance has very big influence.In order to avoid the too high infringement to caused by chip of local temperature, it is necessary to which temperature sensor is with real-time
The change of detection temperature.
Temperature sensor has two kinds of implementations in piece and outside piece, wherein the outer temperature sensor of piece have higher precision and
The advantages of accuracy, but need plate level device to realize, it is not the low cost desired by manufacturer, and in chip operation shape
Under state, the temperature difference in piece and outside piece is larger, so the outer temperature sensor of piece is can not to meet chip internal temperature detection need
Ask.Lower and cost-effective angle is set out in view of the situation, and temperature sensor obtains in the piece of real-time detection chip temperature
It is extensive to pay attention to.
As patent application 201210552748.3 discloses a kind of built-in temperature sensor, including：Basic circuit unit, cuts
Ripple unit, resistor trimming unit, electric fuse array and R-C filter networks.TEMP on piece is eliminated using copped wave unit
Non-ideal factor offset voltage, mismatch and the noise of device；Meanwhile the further of precision is further realized using resistor trimming unit
Improve, and the control bit needed for resistor trimming unit is integrated in chip with electric fuse array, effectively control packaging cost, and
It ensure that the high integration of device.In addition, built-in temperature sensor provided by the invention also realized by R-C filter networks it is defeated
Go out the normalization of voltage, finally give and eliminate technogenic influence, the high accuracy of consistent output result on different chips
Built-in temperature sensor.
Industry generally uses temperature sensing device of the bipolar transistor as temperature sensor at present.Pass through bipolar transistor
A PTAT voltage directly proportional to temperature and a reference voltage V ref not varied with temperature can be produced.The two are believed
Number be sent in analog-digital converter (ADC), it is possible to realize the numeral reading of temperature, then by bus by numeral input into DSP,
Temperature control is provided.Temperature sensor extracts circuit by front end DIE Temperature and ADC is formed, and is suitable at present in temperature sensor
The ADC technologies of application are more ripe, and therefore, the precision major limitation of temperature sensor is in the front end physical quantity related to temperature
Extraction circuit, the temperature characterisitic depending on bipolar transistor after all.Temperature sensor circuit in the piece of prior art
Schematic diagram is as shown in Figure 1.Amplifier OP offset voltage accounts for most important part in overall error, causes 10 DEG C of deviation.At present
High-precision temperature sensor is mainly by correcting the precision to realize very high, but correction can increase cost and the survey of chip
Try cost.Dynamic element matching technology is averaging to reduce error, using dynamic element matching by dynamically exchanging current source
Technology influences to eliminate the error of the mismatch of bipolar transistor and base emitter voltage.Dynamic element matching technology needs
Current source is exchanged, although error can be reduced, increases chip area and goes out the money that data time excessively takes ADC slowly
Source.
The content of the invention
Based on this, therefore the present invention primary mesh be to provide it is a kind of without calibration temperature sensors of high precision, the biography
Sensor need not calibrate can and realize ± 1 DEG C of temperature survey, greatly improve the measurement accuracy of temperature sensor.
It is to provide a kind of temperature sensors of high precision without calibration, the sensor reduces another mesh of the present invention
The non-match error of transistor, four offset voltage influences for being averaging elimination amplifier again are measured by ADC, so as to further carry
The accuracy of high measurement, while chip cost can be saved and avoid the excessive resource for taking ADC.
To achieve the above object, the technical scheme is that：
A kind of temperature sensors of high precision without calibration, it is characterised in that the temperature sensors of high precision is by two parts group
The reference voltage VREF for producing two accurate VBE voltages and not varying with temperature into, Part I, Part II be by
VBE voltages amplify by amplifier, and output TSVIP and TSVIN give ADC, then by configuring different TS_TM<1∶0>, ADC
Measure and be averaging again respectively, further eliminate error component；Wherein, Part I circuit includes bipolar transistor copped wave
Amplifier, current mirroring circuit, resistor voltage divider circuit and RC filter circuits；The bipolar transistor chopper amplifier includes band copped wave
Amplifier and bipolar transistor Q1, Q2, band chopper amplifier are connected to bipolar transistor Q1 and Q2, bipolar transistor Q1 and Q2
Produce two accurate VBE voltages；The current mirroring circuit is connected to band chopper amplifier and bipolar transistor Q1 and Q2, described
Resistor voltage divider circuit is connected to band chopper amplifier, and RC filter circuits are then connected to resistor voltage divider circuit；Part II circuit is by amplifier
Form.
The bipolar transistor Q1 and Q2 is PNP transistor, and Q1 and Q2 area ratio be arranged to 4: 32, Q1 and
Q2 base stage and colelctor electrode is all connected to ground GND, the negative terminal of Q1 emitter stage connect band chopper amplifier, and Q2 emitter stage first connects electricity
Hinder R3 one end, then the anode of the other end connect band chopper amplifier by R3.
Described resistance R1, R2 form current mirroring circuit.
The resistor voltage divider circuit is made up of resistance R5, R6, and same connect of wherein resistance R5 and R6 is connected to RC filter circuits together.
Further, the output end with chopper amplifier is connected to PMOS M1 grid, and M1 source electrode is connected to power supply
VDD, M1 drain electrode connection resistance R4 one end D, with being connected together, R1's is another for the R4 other end and resistance R1, R2 one end
End is connected to the negative terminal with chopper amplifier, and the R2 other end is connected to the anode with chopper amplifier.
Further, resistance R5 one end is connected to PMOS M1 drain electrode, and the R5 other end connects resistance R6 one end,
The R6 other end is connected to ground GND, forms resistor voltage divider circuit.
Further, resistance R7 and electric capacity C1 forms RC filter circuits, and resistance R7 one end and electric capacity C1 one end are connected in one
Output VREF voltages are played, the R7 other end is connected to R5 and R6 and connects one end together, and the another of C1 terminates to ground GND.
Further, another RC wave filter that resistance R8 and electric capacity C2 is formed, resistance R9 and electric capacity C3 are formed another
Individual RC wave filters, bipolar transistor Q1 base emitter voltage VBE1 pass through resistance R8 and electric capacity C2, output voltage
TEMPVIP；Transistor Q2 base emitter voltage VBE2 similarly passes through resistance R9 and electric capacity C3, output voltage
TEMPVIN。
Further, the band chopper amplifier is made up of folded common source and common grid amplifier and copped wave unit, wherein, copped wave unit tool
There are the first copped wave unit, the second copped wave unit and the 3rd copped wave unit, first copped wave unit CH1 is placed on amplifier input, real
Now to the modulation of input signal；Second copped wave unit CH2, which is placed on, realizes that both-end becomes at single-ended current mirror, passes through switching at runtime
Current mirror metal-oxide-semiconductor can eliminate noise and the imbalance of current mirror；3rd copped wave unit CH3 is placed on amplifier current source, realizes to
The demodulation of signal is adjusted, and offset voltage is modulated.
Further, Part II circuit includes amplifier TS_OP1 and TS_OP2, and wherein TEMPVIP is connected to amplifier TS_
OP1 anode, by configuration bit TS_TM<1>Control, amplifier TS_OP1 outputs TSVIP；TEMPVIN is being connected to amplifier TS_OP2 just
End, by configuration bit TS_TM<0>Control, amplifier TS_OP2 outputs TSVIN；Resistance R21, R22 and R23 are cascaded, resistance
R21 one end is connected to TSVIP, and the R21 other end and resistance R22 one end are together the same as the negative terminal for being connected to amplifier TS_OP1, R22
Another one end for terminating to resistance R23 together with amplifier TS_OP2 negative terminal is connected to, the another of R23 terminates to TSVIN.
Further, Part II circuit also includes electric capacity C21 and C22, wherein, an electric capacity C21 end is connected to
TEMPVIP, other end ground connection GND；An electric capacity C22 end is connected to TEMPVIN, other end ground connection GND.
The beneficial effects of the invention are as follows：
1st, the offset voltage of amplifier is eliminated using wave chopping technology, the output error for finally there was only tens uV, eliminates temperature
The most important error in sensor error source, so as to greatly improve the measurement accuracy of temperature sensor.
2nd, bipolar transistor Q1 and Q2 areas ratio are arranged to 4：32, reduce the non-match error of transistor, and
Layout further reduces error using the common centroid technique of painting.
3rd, two-way precision current ratio is realized by two resistance ratios, instead of metal-oxide-semiconductor current mirroring circuit, due to resistance ratio
Mismatch is less than 0.1% error, and this programme need not realize accurate electric current ratio using Dynamic Matching technology, so as to save chip
Cost and the resource for avoiding excessive occupancy ADC.
4th, because VBE driving force is inadequate, ADC measurements are given again by amplifier amplification, because amplifier is gone back in itself
Configuration bit TS_TM can be passed through there is offset voltage<1∶0>Be respectively configured 00,01,10,11, ADC measures four times and is averaging again
The offset voltage influence of amplifier is eliminated, so as to further improve the accuracy of measurement.
Brief description of the drawings
Fig. 1 is the sensor circuit schematic diagram that prior art is implemented.
Fig. 2 is the circuit diagram that the present invention is implemented.
Fig. 3 is the reference electricity that the present invention implements Part I two accurate VBE voltages of generation and do not varied with temperature
Press VREF circuit diagrams.
Fig. 4 is that the present invention implements the circuit diagram with chopper amplifier in Part I circuit.
Fig. 5 is the structure principle chart that the present invention implements Part II amplifying circuit.
Fig. 6 is the circuit diagram that the present invention implements floating current source amplifier in Part II circuit.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The present invention proposes a kind of temperature sensors of high precision without correction, and its circuit theory diagrams is as shown in Fig. 2 in figure
Shown, temperature sensors of high precision is made up of two parts, and Part I circuit produces two accurate VBE voltages and not with temperature
The reference voltage VREF of change, Part II circuit amplify VBE voltages by amplifier, and output TSVIP and TSVIN gives
ADC, then by configuring different TS_TM<1∶0>, ADC measures be averaging again respectively, further eliminates error component.
Part I circuit diagram as shown in figure 3, including bipolar transistor chopper amplifier, current mirroring circuit, two it is accurate
VBE circuits, resistor voltage divider circuit and RC filter circuits composition；The bipolar transistor chopper amplifier includes band copped wave and transported
Put and be connected to bipolar transistor Q1 and Q2, bipolar transistor Q1 and Q2 production with bipolar transistor Q1, Q2, band chopper amplifier
Raw two accurate VBE voltages.
Bipolar transistor Q1 and Q2 are to use PNP transistor, and Q1 and Q2 area ratio are arranged to 4：32, Q1 and Q2
Base stage and colelctor electrode be all connected to ground GND, at the negative terminal B of Q1 emitter stage connect band chopper amplifier, Q2 emitter stage first connects
Resistance R3 one end, then the anode C of the other end connect band chopper amplifier by R3.Output end with chopper amplifier is connected to
PMOS M1 grid, M1 source electrode are connected to power vd D, M1 drain electrode connection resistance R4 one end D, the R4 other end and resistance
R1, R2 one end are with being connected together, and the R1 other end is connected to the negative terminal with chopper amplifier, and the R2 other end is connected to band copped wave
The anode of amplifier.Resistance R5 one end is connected to PMOS M1 drain electrode, and R5 other end connection resistance R6 one end, R6's is another
One end is connected to ground GND, forms resistor voltage divider circuit, and E point voltages are formed by D point voltages.Resistance R7 and electric capacity C1 is formed
RC filter circuits, resistance R7 one end and electric capacity C1 one end connect together output VREF voltages, the R7 other end be connected to R5 and
R6 is same to connect one end, and the another of C1 terminates to ground GND.Bipolar transistor Q1 base emitter voltage VBE1 passes through resistance
The RC wave filters that R8 and electric capacity C2 is formed, output voltage TEMPVIP；Transistor Q2 base emitter voltage VBE2 is similarly
The RC wave filters formed by resistance R9 and electric capacity C3, output voltage TEMPVIN.
Circuit diagram with chopper amplifier is as shown in figure 4, it is made up of folded common source and common grid amplifier and copped wave unit.First
Copped wave unit CH1 is placed on amplifier input (pipe M1, M2 grid), realizes the modulation to input signal.Second copped wave unit
CH2, which is placed on, realizes that both-end becomes at single-ended current mirror (pipe M4, M5 drain electrode), can be eliminated by switching at runtime current mirror metal-oxide-semiconductor
The noise of current mirror and imbalance.3rd copped wave unit CH3 is placed on amplifier current source (pipe M10, M11 drain electrode), realizes to
The demodulation of signal is adjusted, and offset voltage is modulated.
Voltage VBE1 and VBE2 driving force are inadequate caused by Part I circuit, it is impossible to ADC measurements are directly fed to,
Need to be amplified by amplifying circuit, then give ADC measurements.
The structure principle chart of Part II amplifying circuit as shown in figure 5, TEMPVIP is connected to amplifier TS_OP1 anode, by
Configuration bit TS_TM<1>Control, amplifier TS_OP1 outputs TSVIP.TEMPVIN is connected to amplifier TS_OP2 anode, by configuration bit
TS_TM<0>Control, amplifier TS_OP2 outputs TSVIN.Resistance R21, R22 and R23 are cascaded, resistance R21 one end connection
To TSVIP, the R21 other end and resistance R22 one end terminate to the negative terminal for being connected to amplifier TS_OP1, the another of R22 together
Resistance R23 one end terminates to TSVIN with the negative terminal for being connected to amplifier TS_OP2, the another of R23 together.An electric capacity C21 termination
To TEMPVIP, other end ground connection GND.An electric capacity C22 end is connected to TEMPVIN, other end ground connection GND.
VBE1 and VBE2 is amplified by amplifier, there is offset voltage influence measurement accuracy again in itself for amplifier, it is necessary to will
The offset voltage of amplifier eliminates.Amplifier TS_OP uses floating current source structure, its schematic diagram as shown in fig. 6, amplifier TS_OP1,
TS_OP2 is respectively by configuration bit TS_TM<1∶0>Control.Respectively by TS_TM<1∶0>Be configured to 00,01,10,11, ADC surveys respectively
Four arithmetic averagings again of amount, so as to eliminate the influence of offset voltage, improve measurement accuracy.
The present invention includes following improvement：1st, the offset voltage of amplifier is eliminated using wave chopping technology.2nd, two it is bipolar
Transistor npn npn Q1 and Q2, Q1 and Q2 areas ratio are arranged to 4: 32, and the common centroid technique of painting is used on layout.3rd, current mirroring circuit
To be realized by two resistance, with being connected together, other end is coupled with the positive and negative terminal of chopper amplifier for one end of two resistance,
" empty short " effect of amplifier makes 2 points of voltage equal, is only determined, made by the ratio of resistance so as to the current ratio of current mirror
Obtain this programme and do not need dynamic element matching technology.4th, bipolar transistor Q1 and Q2 base emitter voltage VBE1 and
VBE2 is sent to amplifier amplification by a RC wave filter as temperature sensor voltage, then passes through two configuration bit TS_TM<1∶
0>Be respectively configured 00,01,10,11, ADC measure four times respectively and be averaging again, so as to improve measurement accuracy.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of temperature sensors of high precision without calibration, it is characterised in that the temperature sensors of high precision is by two parts group
The reference voltage VREF for producing two accurate VBE voltages and not varying with temperature into, Part I, Part II be by
VBE voltages amplify by amplifier, and output TSVIP and TSVIN give ADC, then by configuring different TS_TM<1：0>, ADC
Measure and be averaging again respectively, further eliminate error component；Wherein, Part I circuit includes bipolar transistor copped wave
Amplifier, current mirroring circuit, resistor voltage divider circuit and RC filter circuits；The bipolar transistor chopper amplifier includes band copped wave
Amplifier and bipolar transistor Q1, Q2, band chopper amplifier are connected to bipolar transistor Q1 and Q2, bipolar transistor Q1 and Q2
Produce two accurate VBE voltages；The current mirroring circuit is connected to band chopper amplifier and bipolar transistor Q1 and Q2, described
Resistor voltage divider circuit is connected to band chopper amplifier, and RC filter circuits are then connected to resistor voltage divider circuit；Part II circuit is by amplifier
Form.
2. the temperature sensors of high precision without calibration as claimed in claim 1, it is characterised in that the bipolar transistor
Q1 and Q2 is PNP transistor, and Q1 and Q2 area ratio is arranged to 4: 32, Q1 and Q2 base stage and colelctor electrode is all connected to ground
The negative terminal of GND, Q1 emitter stage connect band chopper amplifier, Q2 emitter stage first connect resistance R3 one end, then by the another of R3
Hold the anode of connect band chopper amplifier.
3. the temperature sensors of high precision without calibration as claimed in claim 1, it is characterised in that described resistance R1, R2 are formed
Current mirroring circuit；The resistor voltage divider circuit is made up of resistance R5, R6, and same connect of wherein resistance R5 and R6 is connected to RC filtered electricals together
Road.
4. the temperature sensors of high precision without calibration as claimed in claim 3, it is characterised in that described with chopper amplifier
Output end is connected to PMOS M1 grid, and M1 source electrode is connected to power vd D, M1 drain electrode connection resistance R4 one end D, R4's
With being connected together, the R1 other end is connected to the negative terminal with chopper amplifier, the R2 other end for the other end and resistance R1, R2 one end
It is connected to the anode with chopper amplifier.
5. the temperature sensors of high precision without calibration as claimed in claim 4, it is characterised in that resistance R5 one end connection
To PMOS M1 drain electrode, R5 other end connection resistance R6 one end, the R6 other end is connected to ground GND, forms resistance point
Volt circuit.
6. the temperature sensors of high precision without calibration as claimed in claim 1, it is characterised in that resistance R7 and electric capacity C1 structures
Into RC filter circuits, resistance R7 one end and electric capacity C1 one end, which connect together, exports VREF voltages, and the R7 other end is connected to R5
One end is connect together with R6, and the another of C1 terminates to ground GND.
7. the temperature sensors of high precision without calibration as claimed in claim 6, it is characterised in that resistance R8 and electric capacity C2 structures
Into another RC wave filter, another RC wave filters that resistance R9 and electric capacity C3 are formed, bipolar transistor Q1 base stage-hair
Emitter voltage VBE1 passes through resistance R8 and electric capacity C2, output voltage TEMPVIP；Transistor Q2 base emitter voltage VBE2
Similarly pass through resistance R9 and electric capacity C3, output voltage TEMPVIN.
8. as claimed in claim 1 without calibration temperature sensors of high precision, it is characterised in that the band chopper amplifier by
Folded common source and common grid amplifier and copped wave unit composition, wherein, copped wave unit has the first copped wave unit, the second copped wave unit and the
Three copped wave units, first copped wave unit CH1 are placed on amplifier input, realize the modulation to input signal；Second copped wave list
First CH2, which is placed on, realizes that both-end becomes at single-ended current mirror, by switching at runtime current mirror metal-oxide-semiconductor can eliminate current mirror noise and
Imbalance；3rd copped wave unit CH3 is placed on amplifier current source, realizes the demodulation to modulated signal, and offset voltage is adjusted
System.
9. the temperature sensors of high precision without calibration as claimed in claim 7, it is characterised in that Part II circuit includes
There are amplifier TS_OP1 and TS_OP2, wherein TEMPVIP is connected to amplifier TS_OP1 anode, by configuration bit TS_TM<1>Control, fortune
Put TS_OP1 outputs TSVIP；TEMPVIN is connected to amplifier TS_OP2 anode, by configuration bit TS_TM<0>Control, amplifier TS_OP2
Export TSVIN；Resistance R21, R22 and R23 are cascaded, and resistance R21 one end is connected to TSVIP, the R21 other end and electricity
R22 one end is hindered together with the negative terminal for being connected to amplifier TS_OP1, and R22 another one end for terminating to resistance R23 is same together to be connected to
Amplifier TS_OP2 negative terminal, the another of R23 terminate to TSVIN.
10. the temperature sensors of high precision without calibration as claimed in claim 9, it is characterised in that Part II circuit also wraps
Electric capacity C21 and C22 have been included, wherein, an electric capacity C21 end is connected to TEMPVIP, other end ground connection GND；An electric capacity C22 termination
To TEMPVIN, other end ground connection GND.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710554271.5A CN107543626B (en) | 2017-07-07 | 2017-07-07 | High-precision temperature sensor without calibration |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710554271.5A CN107543626B (en) | 2017-07-07 | 2017-07-07 | High-precision temperature sensor without calibration |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107543626A true CN107543626A (en) | 2018-01-05 |
| CN107543626B CN107543626B (en) | 2019-12-27 |
Family
ID=60970586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710554271.5A Active CN107543626B (en) | 2017-07-07 | 2017-07-07 | High-precision temperature sensor without calibration |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107543626B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110514314A (en) * | 2019-08-27 | 2019-11-29 | 李拥军 | A kind of CMOS technology low power consumption high-precision temperature sensor |
| CN112272008A (en) * | 2020-10-21 | 2021-01-26 | 高新兴物联科技有限公司 | Method and device for automatically matching calibration curve of crystal body temperature parameter |
| CN114035642A (en) * | 2021-11-08 | 2022-02-11 | 芯海科技（深圳）股份有限公司 | Reference circuit, chip and control method |
| CN114073412A (en) * | 2020-07-31 | 2022-02-22 | 浙江绍兴苏泊尔生活电器有限公司 | Temperature detection circuit and method and cooking utensil |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080304546A1 (en) * | 2006-06-28 | 2008-12-11 | Lim Chee H | System to calibrate on-die temperature sensor |
| CN102494791A (en) * | 2011-12-30 | 2012-06-13 | 上海集成电路研发中心有限公司 | On-chip temperature sensor |
| CN104697658A (en) * | 2013-12-10 | 2015-06-10 | 展讯通信（上海）有限公司 | Sensor circuit |
| CN105300539A (en) * | 2014-07-01 | 2016-02-03 | 英飞凌科技股份有限公司 | Remote temperature sensing |
-
2017
- 2017-07-07 CN CN201710554271.5A patent/CN107543626B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080304546A1 (en) * | 2006-06-28 | 2008-12-11 | Lim Chee H | System to calibrate on-die temperature sensor |
| CN102494791A (en) * | 2011-12-30 | 2012-06-13 | 上海集成电路研发中心有限公司 | On-chip temperature sensor |
| CN104697658A (en) * | 2013-12-10 | 2015-06-10 | 展讯通信（上海）有限公司 | Sensor circuit |
| CN105300539A (en) * | 2014-07-01 | 2016-02-03 | 英飞凌科技股份有限公司 | Remote temperature sensing |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110514314A (en) * | 2019-08-27 | 2019-11-29 | 李拥军 | A kind of CMOS technology low power consumption high-precision temperature sensor |
| CN110514314B (en) * | 2019-08-27 | 2021-05-25 | 李拥军 | CMOS (complementary Metal oxide semiconductor) process low-power-consumption high-precision temperature sensor |
| CN114073412A (en) * | 2020-07-31 | 2022-02-22 | 浙江绍兴苏泊尔生活电器有限公司 | Temperature detection circuit and method and cooking utensil |
| CN114073412B (en) * | 2020-07-31 | 2023-05-09 | 浙江绍兴苏泊尔生活电器有限公司 | Temperature detection circuit and method and cooking utensil |
| CN112272008A (en) * | 2020-10-21 | 2021-01-26 | 高新兴物联科技有限公司 | Method and device for automatically matching calibration curve of crystal body temperature parameter |
| CN112272008B (en) * | 2020-10-21 | 2023-10-13 | 高新兴物联科技股份有限公司 | Method and device for automatically matching crystal temperature parameter calibration curve |
| CN114035642A (en) * | 2021-11-08 | 2022-02-11 | 芯海科技（深圳）股份有限公司 | Reference circuit, chip and control method |
| CN114035642B (en) * | 2021-11-08 | 2023-08-18 | 芯海科技（深圳）股份有限公司 | Reference circuit, chip and control method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107543626B (en) | 2019-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107543626A (en) | A kind of temperature sensors of high precision without calibration | |
| CN108225588B (en) | Temperature sensor and temperature detection method | |
| CN100489726C (en) | Energy gap reference circuit with low supply voltage and method for supplying energy gap energy gap reference current | |
| CN103837253B (en) | A kind of CMOS temperature transmitter | |
| CN101762336B (en) | Current temperature sensor circuit for CMOS switch and control method thereof | |
| CN101820256A (en) | Sensor signal amplifying and conditioning circuit | |
| CN201589668U (en) | CMOS switch current temperature sensor circuit | |
| CN104679092B (en) | The excess temperature delay protection circuit of wide power voltage | |
| CN109471486A (en) | A kind of low noise bandgap references circuit reducing offset influence | |
| CN207268657U (en) | A kind of on piece temperature sensing circuit with slope-compensation | |
| TW201445114A (en) | Method for sensing multi-point temperatures applied to integrated circuit chips and system for the same | |
| TWI515413B (en) | Bridge sensor signal detection circuit | |
| CN109813455A (en) | A kind of CMOS temperature transmitter | |
| CN109444792A (en) | A kind of circuit reducing current sensor sampling error | |
| JPS5824042B2 (en) | voltage follower circuit | |
| CN211783939U (en) | Simulation front end of high-precision temperature detection chip | |
| CN217443793U (en) | Chip power supply circuit | |
| CN102980677B (en) | Temperature measuring method and device for large-scale objects based on quartz temperature sensor | |
| CN203965060U (en) | A kind of temperature sensor circuit based on reference source | |
| CN206556780U (en) | Temperature-detecting device | |
| CN104569906B (en) | A kind of three-phase intelligent ammeter nonlinear load accurate measurement analysis design method | |
| CN210377197U (en) | Low-temperature floating band gap reference voltage source circuit | |
| CN210007372U (en) | Low-power-consumption over-temperature protection circuit with heat hysteresis function | |
| CN113834961A (en) | Alternating current front end detection circuit | |
| CN206638358U (en) | A kind of high-precision temperature detection circuit being easily achieved |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |