CN107541715B - 基板处理装置以及利用该基板处理装置的薄膜沉积方法 - Google Patents

基板处理装置以及利用该基板处理装置的薄膜沉积方法 Download PDF

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CN107541715B
CN107541715B CN201710498435.7A CN201710498435A CN107541715B CN 107541715 B CN107541715 B CN 107541715B CN 201710498435 A CN201710498435 A CN 201710498435A CN 107541715 B CN107541715 B CN 107541715B
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李大濬
金容珍
白春金
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YUANYI IPS CORP
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Abstract

本发明涉及基板处理装置以及利用该基板处理装置的薄膜沉积装置。本实施例的基板处理装置包括：腔室，具有密封的工艺区域；基板支撑架，位于所述腔室下部，使晶片安装在上面，并且在内部使防止沉积气体通过气体通道向侧面周围排放；花洒头，位于所述腔室上部，以使源气体以及反应气体供应于所述基板支撑架上；以及清洗环结构体，位于所述基板支撑架的边缘，使从所述基板支撑架内部流入的防止沉积气体供应到所述晶片上面边缘。其中，所述清洗环结构体包括：清洗环，安装在所述基板支撑架周围，以围绕晶片边缘；多个凸起部，从所述清洗环内侧面向所述晶片边缘方向凸出形成；其中，通过所述凸起部在所述清洗环的内侧面与所述晶片边缘之间形成间隙部，通过所述间隙部使所述防止沉积气体供应到所述晶片上面侧。

Description

基板处理装置以及利用该基板处理装置的薄膜沉积方法
技术领域
本发明涉及基板处理装置以及利用该基板处理装置的薄膜沉积方法，更详细地说涉及原子层沉积装置以及利用该原子层沉积装置的薄膜沉积方法。
背景技术
一般地说，为了在半导体晶片或者玻璃基板上沉积固定厚度的薄膜，正在使用物理气相沉积方法(physical vapor deposition,PVD)或者化学气相沉积方法(chemicalvapor deposition,CVD)等。
一般地说CVD装置包括基板支撑架，并且可在基板支撑架的边缘区域包括边缘环(edge ring)以及清洗环(purge ring)。边缘环以及清洗环分别作为包括气体喷射口的环结构体，是用于防止在晶片上面边缘以及后面边缘沉积薄膜的结构体。边缘环被设计成使清洗气体供应于晶片上面边缘，而清洗环可被设计成使清洗气体供应于晶片后面边缘。
如今，随着半导体元件的集成密度的增加，设计规则(design rule)变得详细，进而正在增加对薄膜的精细图的要求。作为该要求的一环，以原子层为单位沉积薄膜的原子层沉积方法(atomic layer deposition；以下，称为ALD)的使用正在增加。进一步的说，为了改善产量，正在持续试图也将晶片边缘区域作为元件区域来利用。但是，所述边缘环是为了将吹扫气体喷射于所述晶片上面边缘而设计的，因此可占据晶片上面边缘的一部分。因为该边缘环，很难增加晶片的产量。
发明内容
根据本发明一实施例的基板处理装置包括：腔室，具有密封的工艺区域；基板支撑架，位于所述腔室下部，使晶片安装在上面，并且在内部使防止沉积气体通过气体通道向侧面周围排放；花洒头，位于所述腔室上部，以使源气体以及反应气体供应于所述基板支撑架上；以及清洗环结构体，位于所述基板支撑架的边缘，使从所述基板支撑架内部流入的防止沉积气体供应到所述晶片上面边缘。所述清洗环结构体包括：清洗环，安装在所述基板支撑架周围，以围绕晶片边缘；多个凸起部，从所述清洗环内侧面向所述晶片边缘方向凸出形成；其中，通过所述凸起部在所述清洗环的内侧面与所述晶片边缘之间形成间隙部，通过所述间隙部使所述防止沉积气体供应到所述晶片上面侧。
另外，利用上述的基板处理装置沉积薄膜方法包括如下的步骤：首先，在腔室内部的所述基板支撑架上部装载所述晶片。接着，使所述基板支撑架上升并移动至所述腔室内部的所述工艺区域。之后，在所述工艺区域将薄膜沉积于所述晶片上，并且为了卸载已沉积薄膜的晶片，使所述基板支撑架下降并移动。之后，卸载所述晶片。
所述薄膜沉积步骤包括如下的步骤：将源气体供应于所述晶片上；将反应气体供应于所述晶片上；其中，所述防止沉积气体在所述源气体供应步骤以及所述反应气体供应步骤期间通过所述间隙部供应于所述晶片上面的边缘。
附图说明
图1是根据本发明一实施例的基板处理装置概略性剖面图。
图2是扩大示出根据本发明一实施例的清洗环结构体的剖面图。
图3是根据本发明一实施例的清洗环结构体的立体图。
图4是根据本发明一实施例的清洗环结构体的平面图。
图5是用于说明根据本发明一实施例的ALD沉积方法的时序图
图6是用于说明根据本发明另一实施例的CVD沉积方法的时序图。
具体实施方法
与附图一起参照详细后述的实施例可明确本发明优点以及特征、达成方法。但是本发明并不限定于在以下公开实施例，而是可实现相互不同的形状，而且本实施例只是使本发明的公开更加完整，并且是为了向本发明所属技术领域的技术人员告知本发明的范畴而提供的，并且本发明只由权利要求的范围而被定义。为了说明的明确性，可夸张示出图面中的层以及区域的大小以及相对大小。在说明书整体内容中相同参照符号称为相同构成要素。
图1是根据本发明一实施例的基板处理装置概略性剖面图。
本实施例的ALD装置100包括定义工艺区域110a的真空腔室110。在真空腔室110内部设置有基板支撑架120。
在工艺区域110a的顶部可设置花洒头130，该花洒头130将由源气体与反应气体构成的处理气体供应于工艺区域110a。花洒头130可包括用于向所述晶片W喷射处理气体的多个喷射孔H。
基板支撑架120可包括：安装有晶片W的平台121；以及设置在工艺区域110a底部来支撑所述平台121的中空的支撑部122。
在基板支撑架120内部可具有主要气体通道140a。主要气体通道140a与防止沉积气体源(未示出)连接，进而可传达防止沉积气体。
在基板支撑架120的上部边缘设置清洗环结构体150，进而可限制附属气体通道140b。附属气体通道140b与主要气体通道140a连通，从而可将从附属气体通道140b供应的防止沉积气体传达于晶片W后面。所述清洗环结构体150可位于基板支撑架120的边缘，可使防止沉积气体供应于所述晶片W后面边缘。
如图2至图4所示，本实施例的清洗环结构体150可包括：环形清洗环152；以及位于清洗环152内侧壁的多个凸起部155(例如，至少三个凸起部155)。
清洗环152安装在基本支撑架120的平台121的周围，以围绕所述晶片边缘。
凸起部155从清洗环152的内侧面向所述晶片W的边缘方向凸出形成，进而可调节所述晶片W与清洗环152之间的间隔。通过所述凸起部155可在清洗环152的内侧面与所述晶片W的边缘之间配置有间隙部160。据此，从所述附属气体通道140b传达的防止沉积气体以及追加的反应气体通过所述间隙部160均匀地供应于所述晶片边缘上面。
并且，为使气体能够均匀地传达于晶片W边缘区域，优选为多个(例如，至少三个)所述凸起部155等间距配置。所述凸起部155可向所述清洗环中心部凸出，并且使所述凸起部155具有0.1至1.5mm的宽度。即，所述晶片W边缘与所述清洗环152内侧面无部分性接触，因此所述凸起部155限制所述间隙部160。
另一方面，在清洗环152的上面与所述凸起部155的上面之间(例如，清洗环152的内侧上部表面)形成倾斜部157。对于倾斜部157，为了在安装晶片W时对准晶片中心(centering)而提供的。
如上所述，通过本实施例的清洗环结构体150，防止沉积气体以及追加反应气体均匀地喷射于晶片后面以及上面边缘，因此可调节不均匀地沉积于晶片W边缘的材料薄膜，例如可调节沉积金属膜的均匀度。只是，考虑到沉积于晶片W边缘的材料薄膜的厚度的均匀度，优选为最好使间隙部160的大小均匀。
本实施例的基板处理装置设置清洗环结构体，来代替省略占据晶片边缘的现有的边缘环，其中该清洗环结构体将气体供应于晶片后面的同时通过清洗环与晶片之间的间隙部供应防止沉积气体以及追加反应气体。据此，晶片边缘不被装置占据，而是将气体适当地供应于晶片后面以及上面，进而可利用位于晶片边缘的模具，而且也能够改善形成在晶片边缘的材料薄膜的沉积均匀度，因此能够大幅度改善产量。
可如下驱动如上所述的基板处理装置：
首先，晶片W被装入腔室100的入口部D1，安装在所述基板支撑架120的平台121上部。本实施例的情况，并不具有边缘环本身，而是清洗环结构体150安装在基板支撑架120的结构，因此若安装晶片W，则可直接上升并移动至腔室内工艺区域。
之后，通过花洒头130喷射源气体、反应气体以及吹扫气体，并且通过所述清洗环结构体150供应防止沉积气体以及追加反应气体，从而在晶片上部沉积具有均匀的厚度的薄膜。
若完成薄膜沉积工艺，则所述基板支撑架下降并移动，进而可通过出口D2卸载晶片W。之后，通过所述腔室100的出口D2卸载晶片W。
例如，如图5所示，通过ALD方法沉积材料薄膜的方法可包括：注入源气体的步骤、注入吹扫气体的步骤、注入反应气体的步骤、注入所述吹扫气体的步骤。根据沉积的材料可改变源气体以及反应气体。在执行材料薄膜沉积工艺时，为了抑制材料薄膜的沉积反应，可通过所述附属气体通道140b将防止沉积气体持续供应于晶片W的后面，其中防止沉积气体可以是诸如Ar(氩)、He(氦)、Ne(氖)、Kr(氪)、Xe(氙)以及Rn(氡)的惰性气体。另外，在供应所述反应气体时，可在注入所述反应气体的同时注入H2(氢)气体来作为追加反应气体。据此，可控制沉积于晶片W边缘的材料薄膜的反应。
另一方面，如图6所示，在本发明的清洗环结构体150安装在CVD装置的情况下，材料薄膜沉积方法可一次性将源气体、反应气体、防止沉积气体以及追加反应气体全部供应。
在此，所述反应气体与所述追加反应气体可以是相同的物质。
根据本发明，设置清洗环内侧壁具有多个凸起部的清洗环结构体，来代替去除曾占据晶片上侧边缘的边缘环，其中清洗环设置在基板支撑架周围。利用本发明实施例的清洗环结构体，将防止沉积气体供应于晶片后面边缘，并且通过凸起部使间隙部限制在所述清洗环与晶片边缘之间。通过该间隙部，可将防止沉积气体以及追加反应气体选择性地供应于晶片上面。据此，能够改善在晶片边缘沉积的材料薄膜的沉积均匀度。
以上，详细说明了本发明的优选实施例，但是本发明并不限定于上述实施例，而是在该技术领域的技术人员在本发明的技术思想范围内能够进行各种变形。

Claims (8)

1.一种基板处理装置，其特征在于，包括：
腔室，具有密封的工艺区域；
基板支撑架，位于所述腔室下部，使晶片安装在上面，并且在内部使防止沉积气体通过气体通道向侧面周围排放；
花洒头，位于所述腔室上部，以使源气体以及反应气体供应于所述基板支撑架上；以及
清洗环结构体，位于所述基板支撑架的边缘，使从所述基板支撑架内部流入的防止沉积气体供应到所述晶片上面边缘；
其中，所述清洗环结构体包括：
清洗环，安装在所述基板支撑架周围，以围绕晶片边缘；
多个凸起部，从所述清洗环内侧面向所述晶片边缘方向凸出形成；
其中，通过所述凸起部在所述清洗环的内侧面与所述晶片边缘之间形成间隙部，通过所述间隙部使所述防止沉积气体供应到所述晶片上面侧；
其中，在所述清洗环内侧上面与所述凸起部的上面还形成用于对准所述晶片中心的倾斜部。
2.根据权利要求1所述的基板处理装置，其特征在于，
所述凸起部向所述清洗环中心部凸出，以使所述凸起部具有0.1至1.5mm的宽度。
3.根据权利要求2所述的基板处理装置，其特征在于，
所述凸起部至少具有三个以上，以使所述晶片边缘与所述清洗环内侧面部分性非接触。
4.根据权利要求1所述的基板处理装置，其特征在于，
所述防止沉积气体包括氩气。
5.一种薄膜沉积方法，作为利用权利要求1的基板处理装置沉积薄膜的方法，其特征在于，包括如下的步骤：
在所述腔室内部的所述基板支撑架上部装载所述晶片；
使所述基板支撑架上升并移动至所述腔室内部的所述工艺区域；
在所述工艺区域中将薄膜沉积于所述晶片上；
为了卸载已沉积薄膜的晶片，使所述基板支撑架下降并移动；以及
卸载所述晶片；
其中，所述薄膜沉积步骤包括如下的步骤：
将源气体供应于所述晶片上；以及
将反应气体供应于所述晶片上；
其中，所述防止沉积气体在所述源气体供应步骤以及所述反应气体供应步骤期间通过所述间隙部供应于所述晶片上面的边缘。
6.根据权利要求5所述的薄膜沉积方法，其特征在于，
通过所述间隙部进一步将追加反应气体供应于所述晶片边缘。
7.根据权利要求6所述的薄膜沉积方法，其特征在于，
所述追加反应气体是与所述反应气体相同的物质。
8.根据权利要求5所述的薄膜沉积方法，其特征在于，
所述防止沉积气体包括氩气。
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