CN107528548A - Broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks - Google Patents
Broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks Download PDFInfo
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- CN107528548A CN107528548A CN201710757007.1A CN201710757007A CN107528548A CN 107528548 A CN107528548 A CN 107528548A CN 201710757007 A CN201710757007 A CN 201710757007A CN 107528548 A CN107528548 A CN 107528548A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a kind of broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks, including：Input matching network；Output matching network, input matching network and output matching network are used for the load impedance that the optimum impedance needed for the input and output side of power amplifier is matched to preset value in working frequency range；Intermodulation matching network, intermodulation matching network is arranged between the drain electrode of transistor and output matching network, for carrying out impedance matching at the difference frequency of any two frequency, so that impedance amplitude value of the intermodulation matching network at node is minimum, and optimum impedance is presented in intermodulation matching network at working frequency, to suppress the intermodulation component at differential frequency using more impedance zero points.The amplifier can suppress intermodulation component of the multifrequency power amplifier at differential frequency with the intermodulation matching network of more impedance zero points, so as to effectively lift double frequency concurrent efficiency and the linearity.
Description
Technical field
The present invention relates to mobile communication technology field, more particularly to a kind of width based on more impedance zero point intermodulation matching networks
Band multifrequency power amplifier.
Background technology
With the development of the communication technology, there are increasing 3G/4G/5G communication systems to be standardized and put into effect, this
A little communication systems are dispensed in wide frequency range so that same operator runs multiple different moulds in multiple frequency ranges simultaneously
The communication system of formula turns into a kind of normality.Broadband or multifrequency power amplifier are due to that can be operated in communication frequency apart from each other
Section, the complexity of radio-frequency front-end can be substantially reduced, receive the extensive concern of equipment manufacturers and operator.
In correlation technique, for the design aspect of multifrequency power amplifier, in the general pair net of double-frequency power amplifier
The unrelated double frequency harmonic wave forms control converter structure double frequency of the passive matching network of harmonic tuning multifrequency, frequency of use is added in network
The double-frequency power amplifier in parallel of power amplifier framework and use with spurious reduction etc..But the Dual frequency power in correlation technique is put
Big device when two frequency ranges work independently with prominent performance, and when power amplifier simultaneously in the two band operations when,
Except nonlinear component caused by each frequency range also has the intermodulation component between two frequency ranges, as shown in figure 1, these intermodulation components
A part of nonlinear component can be superimposed on output voltage waveforms, therefore the performance of power amplifier can equally be produced obvious
Influence.
However, only accounted in the double frequency parallel schema of performance boost when being operated in to(for) power amplifier to second harmonic
Control, and the processing for two frequency inter-modulation components lacks effective technical scheme, and works as broadband or multifrequency
, it is necessary to which the intermodulation component of processing is more complicated when power amplifier needs to support multiple double frequency patterns.Therefore, how power is improved
Hydraulic performance decline of the amplifier under double frequency parallel schema, turns into urgent problem to be solved.
The content of the invention
It is contemplated that at least solves one of technical problem in correlation technique to a certain extent.
Therefore, it is an object of the invention to propose a kind of broadband multi-frequency power based on more impedance zero point intermodulation matching networks
Amplifier, effectively lift double frequency concurrent efficiency and the linearity.
To reach above-mentioned purpose, the embodiment of the present invention proposes a kind of more in the broadband of more impedance zero point intermodulation matching networks
Frequency power amplifier, including：Input matching network, one end of the input matching network is connected with radio frequency input side, described defeated
Enter the other end of matching network with the grid of transistor to be connected；Output matching network, one end of the output matching network and institute
The drain electrode for stating transistor is connected, and the other end of the output matching network is connected with radio frequency outlet side, wherein, the input matching
Network and the output matching network are used for the optimum impedance needed for the input and output side of power amplifier in working frequency range
Match the load impedance of preset value；Intermodulation matching network, the intermodulation matching network be arranged at the transistor drain electrode and
Between the output matching network, for carrying out impedance matching at the difference frequency of any two frequency so that the intermodulation
Impedance amplitude value of the distribution network at node is minimum, and optimum impedance is presented in the intermodulation matching network at working frequency, with
Suppress the intermodulation component at differential frequency using more impedance zero points.
The broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks of the embodiment of the present invention, in broadband or
Influence of the intermodulation component to double frequency concurrency performance is considered in the design of multifrequency power amplifier, before traditional output matching network
The intermodulation matching network with multiple impedance zero points is added, suppresses multifrequency work(using the intermodulation matching network of more impedance zero points
Intermodulation component of the rate amplifier at differential frequency, so as to effectively lift double frequency concurrent efficiency and the linearity.
In addition, the broadband multi-frequency power according to the above embodiment of the present invention based on more impedance zero point intermodulation matching networks is put
Big device can also have following additional technical characteristic：
Further, in one embodiment of the invention, the intermodulation matching network includes the first inductance, the second electricity
Sense, the 3rd inductance, the 4th inductance and the 5th inductance and the first electric capacity, the second electric capacity and the 3rd electric capacity, wherein, first inductance
One end be connected with the node, the other end of first inductance respectively with one end of second inductance and the 3rd inductance
One end is connected, and the other end of second inductance is connected with one end of first electric capacity, another termination of first electric capacity
Ground, the other end of the 3rd inductance are connected with one end of the 4th inductance and one end of the 5th inductance respectively, and the described 4th
The other end of inductance is connected with one end of second electric capacity, the other end ground connection of second electric capacity, the 5th inductance
The other end is connected with one end of the 3rd electric capacity, the other end ground connection of the 3rd electric capacity.
Further, in one embodiment of the invention, the load that the load impedance of the preset value is 50 ohm hinders
Anti-, the input matching network, which is further used in working frequency range 50 ohm loads matching transistor, most preferably inputs resistance
Anti-, the output matching network, which is further used for 50 ohm loads are matched into transistor in the working frequency range, most preferably to be exported
Impedance.
Further, in one embodiment of the invention, the output terminal impedance of the transistor is presented at difference frequency
Nearly short-circuit condition, so that the low frequency inter-modulation component between two frequency ranges is shorted to ground respectively, and optimal resistance is then presented in working frequency
It is anti-.
The additional aspect of the present invention and advantage will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
Of the invention above-mentioned and/or additional aspect and advantage will become from the following description of the accompanying drawings of embodiments
Substantially and it is readily appreciated that, wherein：
Fig. 1 is big signal output spectrum diagram of the correlation technique intermediate power amplifier under double frequency burse mode；
Fig. 2 is to be put according to the broadband multi-frequency power based on more impedance zero point intermodulation matching networks of one embodiment of the invention
Big device structural representation；
Fig. 3 is the input matching network structural representation according to the power amplifier of one embodiment of the invention；
Fig. 4 is the schematic equivalent circuit according to more impedance zero point intermodulation matching networks of one embodiment of the invention；
Fig. 5 is the output matching network knot according to the matching network containing intermodulation of the power amplifier of one embodiment of the invention
Structure schematic diagram；And
Fig. 6 is the amplitude curve schematic diagram according to the multifrequency power amplifier output impedance of one embodiment of the invention.
Embodiment
Embodiments of the invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning to end
Same or similar label represents same or similar element or the element with same or like function.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to for explaining the present invention, and is not considered as limiting the invention.
The width based on more impedance zero point intermodulation matching networks proposed according to embodiments of the present invention is described with reference to the accompanying drawings
Band multifrequency power amplifier.
Fig. 2 is the broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks of one embodiment of the invention
Structural representation.
As shown in Fig. 2 being somebody's turn to do the broadband multi-frequency power amplifier PA based on more impedance zero point intermodulation matching networks includes：Input
Matching network IMN, output matching network OMN and intermodulation matching network IMTN.
Wherein, input matching network IMN one end is connected with radio frequency input side, the input matching network IMN other end with
The grid of transistor 100 is connected.Output matching network OMN one end is connected with the drain electrode of transistor 100, output matching network
The OMN other end is connected with radio frequency outlet side, wherein, input matching network IMN and output matching network OMN are used in work frequency
Section matches the optimum impedance needed for multifrequency power amplifier PA input and output side the load impedance of preset value.Intermodulation
Distribution network IMTN is arranged between the drain electrode of transistor 100 and output matching network OMN, and intermodulation matching network IMTN is used in office
Impedance matching is carried out at the difference frequency for two frequencies of anticipating so that impedance amplitude values of the intermodulation matching network IMTN at node is most
It is small, and optimum impedance is presented in intermodulation matching network IMTN at working frequency, to be suppressed using more impedance zero points in differential frequency
The intermodulation component at place.The amplifier PA of the embodiment of the present invention can suppress multifrequency work(with the intermodulation matching network of more impedance zero points
Intermodulation component of the rate amplifier at differential frequency, so as to effectively lift double frequency concurrent efficiency and the linearity.
It is understood that as illustrated in fig. 2, it is assumed that multifrequency power amplifier PA design frequency is f1、f2And f3, and f1<
f2<f3.Optimum performance is reached because multifrequency power amplifier PA has designed when these three frequencies work independently, now
Intermodulation matching network IMTN determines property of the multifrequency power amplifier PA in frequencies above during the work of any two frequency parallel
Energy.In intermodulation matching network IMTN, in the difference frequency f of two frequencies of any of the above2-f1、f3-f1And f3-f2Place carries out impedance
Matching so that impedance amplitude values of the intermodulation matching network IMTN at node is minimum, while in working frequency f1、f2And f3Place is mutual
Adjust matching network IMTN that higher resistance is presented so that the output terminal impedance of transistor 100 is in nearly short-circuit condition at difference frequency, from
And the low frequency inter-modulation component between two frequency ranges is shorted to ground, and optimum impedance is then presented in working frequency.Therefore, in multifrequency work(
Added in rate amplifier PA output matching network OMN after intermodulation matching network IMTN, do not interfere with amplifier not only and setting
Count frequency f1、f2And f3Performance when working independently, and effectively lift double frequency concurrent working performance.
Wherein, in one embodiment of the invention, the load impedance of preset value is 50 ohm of load impedance, input
Distribution network IMN is further used in working frequency range 50 ohm loads matching 100 optimal input impedance of transistor, output
Distribution network OMN is further used in working frequency range 50 ohm loads matching 100 optimal output impedance of transistor.
That is, as shown in figure 3, in an embodiment of the present invention, input matching network IMN and output matching network
OMN can be low reflectingly the optimal resistance needed for multifrequency power amplifier PA input and output side in working frequency range energy low-loss
The anti-load impedance for matching 50 ohm, so as to be presented for guarantee multifrequency power amplifier PA when each frequency range works independently
Optimal performance.
Alternatively, in one embodiment of the invention, as shown in figure 4, intermodulation matching network IMTN includes the first inductance
L1, the second inductance L2, the 3rd inductance L3, the 4th inductance L4 and the 5th inductance L5 and the first electric capacity C1, the second electric capacity C2 and the 3rd
Electric capacity C3, wherein, the first inductance L1 one end is connected with node, the first inductance L1 other end respectively with the second inductance L2 one
End is connected with the 3rd inductance L3 one end, and the second inductance L2 other end is connected with the first electric capacity C1 one end, the first electric capacity C1
Other end ground connection, the 3rd inductance L3 other end is connected with the 4th inductance L4 one end and the 5th inductance L5 one end respectively,
The 4th inductance L4 other end is connected with the second electric capacity C2 one end, the second electric capacity C2 other end ground connection, the 5th inductance L5's
The other end is connected with the 3rd electric capacity C3 one end, the 3rd electric capacity C3 other end ground connection.
In addition, in one embodiment of the invention, as shown in figure 3, the source ground of transistor 100.
Wherein, in one embodiment of the invention, nearly short circuit is presented in the output terminal impedance of transistor 100 at difference frequency
State, so that the low frequency inter-modulation component between two frequency ranges is shorted to ground respectively, and optimum impedance is then presented in working frequency.
For example, put below with being operated in the multifrequency power of 1.8GHz, 2.1GHz and 2.6GHz embodiment of the present invention
It is expanded on further exemplified by big device PA.
In one particular embodiment of the present invention, the multifrequency power amplifier PA of the embodiment of the present invention can use Cree
The model C GH40010 of company GaN HEMT are designed, and it is biased in AB classes, and drain voltage is arranged to 28V, quiescent current
For 100mA.Multifrequency power amplifier PA can be independently operated on 1.7-2.7GHz main flow communications bands, normal using 3.5mm dielectrics
Number, the high frequency sheet material manufacture of 30mil thickness.Multifrequency power amplifier PA input matching network IMN is as shown in figure 3, working
50 ohm loads are matched 100 optimal input impedance of transistor in frequency range.Suppress the output matching net of function containing intermodulation component
50 ohm loads as shown in figure 5, matched 100 optimal output impedance of transistor by network OMN in working frequency range.Obtained after optimization
Intermodulation matching network IMTN equivalent circuit it is as shown in Figure 4.Multifrequency power amplifier PA output impedance is in intermodulation frequency
Amplitude curve at 300MHz, 500MHz and 800MHz is as shown in Figure 6.As a comparison, it have also been devised low-pass intermodulation matching network
IMTN and the more impedance zero point intermodulation matching network IMTN structures proposed are separately in broadband multi-frequency power amplifier PA
It is tested.As multifrequency power amplifier PA under 1.8GHz/2.1GHz and 2.1GHz/2.6GHz both patterns parallel work
When making, difference frequency is 300MHz and 500MHz, and frequency is relatively low, the intermodulation matching network IMTN and low-pass intermodulation of the embodiment of the present invention
Relatively low impedance can be presented in matching network IMTN.And it is parallel under 1.8GHz/2.6GHz patterns to work as multifrequency power amplifier PA
During work, difference frequency 800MHz, the intermodulation matching network IMTN of the embodiment of the present invention still has optimal performance, mutual compared to low pass
Adjust matching network IMTN that lower impedance value is presented, therefore add the intermodulation matching network IMTN of embodiment of the present invention multifrequency work(
Rate amplifier PA double frequency parallel performances are preferably also.
Specifically, in order to test under Three models, multifrequency power amplifier PA is parallel under the excitation of double frequency modulation signal
Performance, the embodiment of the present invention have used 10MHz-LTE modulated signals to enter row energization to three kinds of multifrequency power amplifier PA structures, from
And test obtained ACPR (Adjacent Channel Power Ratio, adjacent-channel power leakage ratio) as shown in table 1.ACPR generations
The exciting power of table signal source is leaked to the power ratio in the power and working band of nearby frequency bands, therefore ACPR is negative
Value, and the lower expression multifrequency power amplifier PA of ACPR performance is better.As shown in table 1, for multifrequency power amplifier PA and
Speech, the intermodulation matching network IMTN of the embodiment of the present invention has the more preferable linearity under any dual-frequency pattern, specifically, original
When multifrequency power amplifier is operated in these three patterns, higher resistance is presented in drain electrode end, as shown in fig. 6, the embodiment of the present invention
Drain impedance amplitude reduction after amplifier PA addition intermodulation matching networks IMTN at the difference frequency of three double frequency patterns, therefore work(
The linearity being placed under double frequency pattern is also improved.Wherein, when double frequency frequency interval is larger, such as the frequency interval of pattern 3
Lower drain electrode is presented compared to low-pass intermodulation matching network IMTN for 800MHz, the intermodulation matching network IMTN of the embodiment of the present invention
Impedance value, therefore power amplifier, when pattern 3 works, linearity improvement effect is than low-pass intermodulation after adding intermodulation matching network IMTN
Distribution network IMTN becomes apparent.Double frequency is simultaneously after the intermodulation matching network IMTN of more impedance zero points is added by multifrequency power amplifier PA
Hair efficiency also lifts 8% or so.Wherein, table 1 is adjacent-channel powers of the broadband multi-frequency power amplifier PA under different double frequency patterns
Table is compared in leakage.
Table 1
The broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks proposed according to embodiments of the present invention,
Influence of the intermodulation component to double frequency concurrency performance is considered in the design of broadband or multifrequency power amplifier, in tradition output
The intermodulation matching network with multiple impedance zero points is added before distribution network, is pressed down using the intermodulation matching network of more impedance zero points
Intermodulation component of the multifrequency power amplifier processed at differential frequency, so as to effectively lift double frequency concurrent efficiency and the linearity.
In the description of the invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise ", " axial direction ", " radial direction ", " circumference " be based on orientation shown in the drawings or
Position relationship, it is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are only used for describing purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include at least one this feature.In the description of the invention, " multiple " are meant that at least two, such as two, three
It is individual etc., unless otherwise specifically defined.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be that machinery connects
Connect or electrically connect；Can be joined directly together, can also be indirectly connected by intermediary, can be in two elements
The connection in portion or the interaction relationship of two elements, limited unless otherwise clear and definite.For one of ordinary skill in the art
For, the concrete meaning of above-mentioned term in the present invention can be understood as the case may be.
In the present invention, unless otherwise clearly defined and limited, fisrt feature can be with "above" or "below" second feature
It is that the first and second features directly contact, or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature are directly over second feature or oblique upper, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is immediately below second feature or obliquely downward, or is merely representative of fisrt feature level height and is less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment or example of the present invention.In this manual, to the schematic representation of above-mentioned term not
Identical embodiment or example must be directed to.Moreover, specific features, structure, material or the feature of description can be with office
Combined in an appropriate manner in one or more embodiments or example.In addition, in the case of not conflicting, the skill of this area
Art personnel can be tied the different embodiments or example and the feature of different embodiments or example described in this specification
Close and combine.
Although embodiments of the invention have been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, one of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changed, replacing and modification.
Claims (4)
- A kind of 1. broadband multi-frequency power amplifier based on more impedance zero point intermodulation matching networks, it is characterised in that including：Input matching network, one end of the input matching network are connected with radio frequency input side, the input matching network it is another One end is connected with the grid of transistor；Output matching network, one end of the output matching network are connected with the drain electrode of the transistor, the output matching net The other end of network is connected with radio frequency outlet side, wherein, the input matching network and the output matching network are used to work Frequency range matches the optimum impedance needed for the input and output side of power amplifier the load impedance of preset value；AndIntermodulation matching network, the intermodulation matching network be arranged at the transistor drain electrode and the output matching network it Between, for carrying out impedance matching at the difference frequency of any two frequency so that resistance of the intermodulation matching network at node Anti- range value is minimum, and optimum impedance is presented in the intermodulation matching network at working frequency, to be suppressed using more impedance zero points Intermodulation component at differential frequency.
- 2. the broadband multi-frequency power amplifier according to claim 1 based on more impedance zero point intermodulation matching networks, it is special Sign is, the intermodulation matching network includes the first inductance, the second inductance, the 3rd inductance, the 4th inductance and the 5th inductance and the One electric capacity, the second electric capacity and the 3rd electric capacity, wherein, one end of first inductance is connected with the node, first inductance The other end be connected respectively with one end of second inductance and one end of the 3rd inductance, the other end of second inductance and institute The one end for stating the first electric capacity is connected, the other end of first electric capacity ground connection, the other end of the 3rd inductance respectively with it is described One end of 4th inductance is connected with one end of the 5th inductance, one end phase of the other end and second electric capacity of the 4th inductance Even, the other end ground connection of second electric capacity, the other end of the 5th inductance is connected with one end of the 3rd electric capacity, described The other end ground connection of 3rd electric capacity.
- 3. the broadband multi-frequency power amplifier according to claim 1 based on more impedance zero point intermodulation matching networks, it is special Sign is that the load impedance of the preset value is 50 ohm of load impedance, and the input matching network is further used in work Make that 50 ohm loads are matched into the optimal input impedance of transistor in frequency range, the output matching network is further used for described 50 ohm loads are matched into the optimal output impedance of transistor in working frequency range.
- 4. the broadband multi-frequency power amplifier according to claim 1 based on more impedance zero point intermodulation matching networks, it is special Sign is that nearly short-circuit condition is presented in the output terminal impedance of the transistor at difference frequency, with respectively low between two frequency ranges Frequency intermodulation component is shorted to ground, and optimum impedance is then presented in working frequency.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111200406A (en) * | 2020-01-17 | 2020-05-26 | 电子科技大学 | Dual-passband power amplifier based on three-frequency impedance matching |
| CN114188204A (en) * | 2020-09-14 | 2022-03-15 | 中微半导体设备(上海)股份有限公司 | Plasma processing method, radio frequency generator and device |
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| CN101674051A (en) * | 2009-09-22 | 2010-03-17 | 锐迪科微电子（上海）有限公司 | Method for improving efficiency of radio frequency power amplifier and radio frequency power amplifier circuit |
| CN103457549A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Tri-band radio frequency power amplifier and impedance matching method of matching network of tri-band radio frequency power amplifier |
| CN103856169A (en) * | 2014-03-17 | 2014-06-11 | 清华大学 | Method for improving output power and efficiency of dual-frequency power amplifier |
| CN106026949A (en) * | 2015-03-31 | 2016-10-12 | 天工方案公司 | Multi-band power amplifier |
| CN105634417A (en) * | 2016-01-28 | 2016-06-01 | 锐迪科微电子（上海）有限公司 | Multi-band radio frequency power amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111200406A (en) * | 2020-01-17 | 2020-05-26 | 电子科技大学 | Dual-passband power amplifier based on three-frequency impedance matching |
| CN114188204A (en) * | 2020-09-14 | 2022-03-15 | 中微半导体设备(上海)股份有限公司 | Plasma processing method, radio frequency generator and device |
| CN114188204B (en) * | 2020-09-14 | 2023-10-31 | 中微半导体设备(上海)股份有限公司 | Plasma processing method, radio frequency generator and device |
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