CN107527896A - A kind of Micro LED encapsulation structures based on RGB colour developings - Google Patents
A kind of Micro LED encapsulation structures based on RGB colour developings Download PDFInfo
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- CN107527896A CN107527896A CN201710664903.3A CN201710664903A CN107527896A CN 107527896 A CN107527896 A CN 107527896A CN 201710664903 A CN201710664903 A CN 201710664903A CN 107527896 A CN107527896 A CN 107527896A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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Abstract
The present invention is a kind of Micro LED encapsulation structures based on RGB colour developings.The present invention includes body, and body is provided with two independent cavitys one and cavity two, and cavity one is interior to be provided with blue chip one, Green Chip and encapsulated layer one, and encapsulated layer one is by blue chip one and the fully wrapped around encapsulation of Green Chip；Blue chip two and encapsulated layer two are provided with cavity two, red fluorescence powder is provided with encapsulated layer two, encapsulated layer two is by two fully wrapped around encapsulation of blue chip, red fluorescence powder fully absorbs blue light that blue chip two sends so as to which cavity two only radiates feux rouges, feux rouges is realized by the red fluorescence powder in blue chip two and encapsulated layer two in cavity two, coordinate with the blue and green light that the blue chip in cavity one, Green Chip are sent, realize that three primary colors light, and pass through current control color blending effect.It is of the invention compared with existing LED is encapsulated, there is the characteristics of size is small, driving voltage is stable, rapid heat dissipation.
Description
Technical field
The invention belongs to diode packaging technology field, specifically a kind of Micro-LED based on RGB colour developings encapsulates knot
Structure.
Background technology
The full-color displaying principles of RGB-LED are mainly based upon three primary colors (red, green, blue) toning general principle.It is well known that
RGB three primary colors can synthesize most colors in nature by certain proportioning.Similarly, RGB-LED is imposed different
Electric current can control its brightness value, so as to realize trichromatic combination, reach the effect of full-color EL display, this is that current LED is big
The method that screen generally uses.RGB LED are upper in application, hence it is evident that come polynary than white light LEDs, such as car light, traffic sign, cupboard
Window etc. is, it is necessary to when using the light of a certain wave band, and RGB LED colour mixture can follow one's bent, in addition its definition, excitation etc.
Performance all has more advantage than white light LEDs.Existing LED is to encapsulate trichromatic LED chip in the body and electrically connect, using saturating
The covering closing of ming tree lipid layer.The specification size of conventional display is 3.0mm × 3.0mm, 2.1mm × 2.1mm, 1.5mm ×
1.5mm, 0.9mm × 0.9mm, the LED thickness of conventional method encapsulation is 0.6mm~1.5mm, is applied it on display, such as
The encapsulation LED of fruit 0.9mm × 0.9mm specifications, then minimum pixel can reach 1.5mm points, meet the pixel, complete of display
The demand that color color is shown, therefore it is used primarily in large-scale outdoor displaying or large-scale indoor exhibition.However, typically in TV or screen
The pixel of LCD or OLED displayings is usually 0.35mm or so used in upper, the pixel compared with display described above
Point is minimum.Because of higher efficiency possessed by LED, want to show to the pixel that the encapsulating structure on RGB-LED bases has been realized,
Compact package can not be realized by original encapsulating structure and size.
In addition, blue, green, the red chip encapsulated in RGB-LED, blue chip and Green Chip are generally using GaN materials as base
Plinth is made and requires 3V driving voltages, and red chip is made based on GaNs materials and requires 2V driving voltage.Therefore
When using chip based on GaN and the chip based on GaNs simultaneously, its driving voltage is different, in the structure of drive circuit
Into and design aspect bothered.
The content of the invention
The present invention is for size is big, can not realize the weak point of compact package after existing LED encapsulation, there is provided one kind utilizes
The Micro-LED encapsulating structures based on RGB colour developings that LED chip is combined with luminescence medium.
Technical scheme is as follows：A kind of Micro-LED encapsulating structures based on RGB colour developings, it should be developed the color based on RGB
Micro-LED encapsulating structures include body, body is provided with two independent cavitys one and cavity two, and indigo plant is provided with cavity one
Color chip one, Green Chip and encapsulated layer one, encapsulated layer one is by blue chip one and the fully wrapped around encapsulation of Green Chip；Cavity two
In be provided with blue chip two and encapsulated layer two, is provided with red fluorescence powder in encapsulated layer two, encapsulated layer two is complete by blue chip two
Wrapping and encapsulating, red fluorescence powder fully absorb blue light that blue chip two sends so as to which cavity two only radiates feux rouges, cavity
Feux rouges is realized by the red fluorescence powder in blue chip two and encapsulated layer two in two, with the blue chip in cavity one, green
The blue and green light that chip is sent coordinates, and realizes that three primary colors light, and pass through current control color blending effect.
In a kind of described Micro-LED encapsulating structures based on RGB colour developings, the blue chip in the cavity one
First, Green Chip uses flip chip structure, and the blue chip two in cavity two uses flip chip structure, radiating faster, energy
Greater density electric current is subjected to, reduces chip size.
In a kind of described Micro-LED encapsulating structures based on RGB colour developings, described encapsulated layer one is transparent ring
Oxygen tree lipid layer, encapsulated layer one are full of cavity one.
In a kind of described Micro-LED encapsulating structures based on RGB colour developings, described encapsulated layer two is to be mixed with red
The epoxy resin layer of fluorescent material, encapsulated layer two are full of cavity two.
A kind of Micro-LED encapsulating structures based on RGB colour developings, should the Micro-LED encapsulating structure bags based on RGB colour developings
Body is included, body is provided with three independent cavitys, is respectively equipped with blue chip in three cavitys, three cavitys are successively with transparent
Encapsulated layer, the encapsulated layer for being mixed with green emitting phosphor, the encapsulated layer encapsulation for being mixed with red fluorescence powder, send in three individual cavities
Blue, green, red trichromatism light mixing, realizes that full color is shown.
In the Micro-LED encapsulating structures that a kind of described RGB develops the color, described body is provided with separate chamber
Body three, cavity four and cavity five, wherein, cavity three, cavity four are provided with envelope with being equipped with blue chip in cavity five in cavity three
Layer three is filled, encapsulated layer three is transparent epoxy resin layer, and the encapsulated layer three of blue light in cavity three projects；Envelope is provided with cavity four
Layer four is filled, encapsulated layer four is to be mixed with the epoxy resin layer of green emitting phosphor, and the green emitting phosphor in encapsulated layer four fully absorbs chamber
The blue light sent in body four only radiates green glow so as to cavity four；Encapsulated layer five is provided with cavity five, encapsulated layer five is to be mixed with
The epoxy resin layer of red fluorescence powder, red fluorescence powder fully absorb blue light so as to which cavity five only radiates feux rouges, cavity three,
The different colours light mixed display as needed that cavity four is sent with cavity five, realizes polynary color.
In the Micro-LED encapsulating structures that a kind of described RGB develops the color, in the cavity three, cavity four and cavity five
Blue chip use flip chip structure.
In the Micro-LED encapsulating structures that a kind of described RGB develops the color, described encapsulated layer three is wrapped in blue chip
Outside and cavity three is full of, encapsulated layer four is wrapped in outside blue chip and is full of cavity four, and encapsulated layer five is wrapped in outside blue chip
And it is full of cavity five.
The present invention is complete using blueness and/or Green Chip and the fluorescent powder packaging layer of the auxiliary displaying for possessing same voltage
Color, simplify drive circuit, effectively reduce the size of LED encapsulation, meet the pixel of Current electronic display screen and clear
Clear degree requires；And the present invention possesses radiating faster, is amenable to the characteristic of greater density electric current.
It is of the invention compared with existing LED is encapsulated, there is the characteristics of size is small, driving voltage is stable, rapid heat dissipation.
Brief description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention one.
Fig. 2 is the structural representation of the embodiment of the present invention two.
In accompanying drawing 1~2,1 represents body；2 represent cavity one；2a represents blue chip one；2b represents Green Chip；2c
Represent encapsulated layer one；3 represent cavity two；3a represents blue chip two；3b represents encapsulated layer two；4 represent cavity three；4a represents envelope
Fill layer three；5 represent cavity four；5a represents encapsulated layer four；6 represent cavity five；6a represents encapsulated layer five；7 represent blue chip.
Embodiment
The embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.
Embodiment one
As shown in figure 1, a kind of Micro-LED encapsulating structures based on RGB colour developings, should the Micro-LED based on RGB colour developings
Encapsulating structure includes body 1, and body 1 is provided with two independent cavitys 1 and cavity 23, blue chip is provided with cavity 1
One 2a, Green Chip 2b and the 2c of encapsulated layer one, the 2a of blue chip one, Green Chip 2b use flip chip structure, encapsulated layer one
2c is by the 2a of blue chip one and the fully wrapped around encapsulation of Green Chip 2b, and the 2c of encapsulated layer one is transparent epoxy resin layer, encapsulated layer
One 2c is full of cavity 1；The 3a of the blue chip two and 3b of encapsulated layer two is provided with cavity 23, the 3a of blue chip two uses upside-down mounting core
Chip architecture, is provided with red fluorescence powder in the 3b of encapsulated layer two, and the 3b of encapsulated layer two is by the fully wrapped around encapsulation of the 3a of blue chip two, encapsulated layer
Two 3b are the epoxy resin layer for being mixed with red fluorescence powder, and the 3b of encapsulated layer two is full of cavity 23, and red fluorescence powder fully absorbs blueness
The blue light that the 3a of chip two is sent radiates feux rouges so as to cavity 23, passes through the 3a of blue chip two and encapsulated layer in cavity 23
Red fluorescence powder in two 3b realizes feux rouges, coordinates with the blue and green light that the blue chip in cavity 1, Green Chip are sent,
Realize that three primary colors light, and faster, be amenable to greater density electric current by current control color blending effect, radiating, reduce chip chi
It is very little.
Embodiment two
As shown in Figure 2, a kind of Micro-LED encapsulating structures based on RGB colour developings, should the Micro- based on RGB colour developings
LED encapsulation structure includes body 1, and body 1 is provided with three independent cavitys 34, cavity 45 and cavity 56, wherein, cavity
34, blue chip three 7 of the cavity 45 with being equipped with flip chip structure in cavity 56, cavity 34 is interior to be provided with encapsulated layer three
4a, the 4a of encapsulated layer three are transparent epoxy resin layer, and the 4a of encapsulated layer three is wrapped in outside blue chip and is full of cavity 34, cavity
The encapsulated 4a of layer three of blue light in 34 is projected；The 5a of encapsulated layer four is provided with cavity 45, the 5a of encapsulated layer four is to be mixed with green fluorescence
The epoxy resin layer of powder, the 5a of encapsulated layer four are wrapped in outside blue chip and are full of cavity 45, the green fluorescence in the 5a of encapsulated layer four
Powder fully absorbs the blue light sent in cavity 45 so as to which cavity 45 radiates green glow；Encapsulated layer five is provided with cavity 56
6a, the 6a of encapsulated layer five are the epoxy resin layer for being mixed with red fluorescence powder, and the 6a of encapsulated layer five is wrapped in outside blue chip and is full of chamber
Body 56, red fluorescence powder fully absorb blue light so as to which cavity 56 radiates feux rouges, cavity 34, cavity 45 and cavity five
The 6 different colours light mixed displays as needed sent, realize polynary color.
Claims (8)
1. a kind of Micro-LED encapsulating structures based on RGB colour developings, it should be included based on the Micro-LED encapsulating structures of RGB colour developings
Body, it is characterised in that described body is provided with two independent cavitys one and cavity two, and blue chip is provided with cavity one
First, Green Chip and encapsulated layer one, encapsulated layer one is by blue chip one and the fully wrapped around encapsulation of Green Chip；It is provided with cavity two
Blue chip two and encapsulated layer two, are provided with red fluorescence powder in encapsulated layer two, and encapsulated layer two is by two fully wrapped around envelope of blue chip
Dress.
A kind of 2. Micro-LED encapsulating structures based on RGB colour developings according to claim 1, it is characterised in that the chamber
Blue chip one, Green Chip in body one use flip chip structure, and the blue chip two in cavity two uses flip-chip
Structure.
3. a kind of Micro-LED encapsulating structures based on RGB colour developings according to claim 1 or 2, it is characterised in that described
Encapsulated layer one be transparent epoxy resin layer, encapsulated layer one is full of cavity one.
4. a kind of Micro-LED encapsulating structures based on RGB colour developings according to claim 1 or 2, it is characterised in that described
Encapsulated layer two be to be mixed with the epoxy resin layer of red fluorescence powder, encapsulated layer two is full of cavity two.
5. a kind of Micro-LED encapsulating structures based on RGB colour developings, it should be included based on the Micro-LED encapsulating structures of RGB colour developings
Body, it is characterised in that described body is provided with three independent cavitys, is respectively equipped with blue chip in three cavitys, three
Cavity successively with transparent encapsulated layer, be mixed with the encapsulated layer of green emitting phosphor, be mixed with red fluorescence powder encapsulated layer encapsulation, three solely
Blue, green, the mixing of red trichromatism light sent in vertical cavity, realizes that full color is shown.
A kind of 6. Micro-LED encapsulating structures of RGB colour developings according to claim 5, it is characterised in that described body 1
Separate cavity three, cavity four and cavity five are provided with, wherein, cavity three, cavity four in cavity five with being equipped with blueness
Chip, cavity three is interior to be provided with encapsulated layer three, and encapsulated layer three is transparent epoxy resin layer；Encapsulated layer four is provided with cavity four, is sealed
Dress layer four is the epoxy resin layer for being mixed with green emitting phosphor；Encapsulated layer five is provided with cavity five, encapsulated layer five is red glimmering to be mixed with
The epoxy resin layer of light powder.
A kind of 7. Micro-LED encapsulating structures of RGB colour developings according to claim 5 or 6, it is characterised in that the cavity
3rd, cavity four uses flip chip structure with the blue chip in cavity five.
A kind of 8. Micro-LED encapsulating structures of RGB colour developings according to claim 5 or 6, it is characterised in that described envelope
Dress layer three is wrapped in outside blue chip and is full of cavity three, and encapsulated layer four is wrapped in outside blue chip and is full of cavity four, encapsulates
Layer five is wrapped in outside blue chip and is full of cavity five.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710664903.3A CN107527896A (en) | 2017-08-07 | 2017-08-07 | A kind of Micro LED encapsulation structures based on RGB colour developings |
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| CN201710664903.3A CN107527896A (en) | 2017-08-07 | 2017-08-07 | A kind of Micro LED encapsulation structures based on RGB colour developings |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022002208A1 (en) * | 2020-07-01 | 2022-01-06 | 惠州视维新技术有限公司 | Dynamic backlight control method, dynamic backlight module, and storage medium |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515422A (en) * | 2008-02-18 | 2009-08-26 | 富士迈半导体精密工业（上海）有限公司 | LED display device |
| CN101937911A (en) * | 2010-07-14 | 2011-01-05 | 深圳市华星光电技术有限公司 | Light-emitting diode packaging structure and backlight module |
| CN102064171A (en) * | 2010-10-22 | 2011-05-18 | 友达光电股份有限公司 | Light-emitting diode (LED) device |
| US20150371973A1 (en) * | 2014-06-19 | 2015-12-24 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Light emitting diode packaging structure and liquid crystal display device |
| CN206210351U (en) * | 2016-09-18 | 2017-05-31 | 佛山市国星光电股份有限公司 | A kind of RGBW display screens |
-
2017
- 2017-08-07 CN CN201710664903.3A patent/CN107527896A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101515422A (en) * | 2008-02-18 | 2009-08-26 | 富士迈半导体精密工业（上海）有限公司 | LED display device |
| CN101937911A (en) * | 2010-07-14 | 2011-01-05 | 深圳市华星光电技术有限公司 | Light-emitting diode packaging structure and backlight module |
| CN102064171A (en) * | 2010-10-22 | 2011-05-18 | 友达光电股份有限公司 | Light-emitting diode (LED) device |
| US20150371973A1 (en) * | 2014-06-19 | 2015-12-24 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Light emitting diode packaging structure and liquid crystal display device |
| CN206210351U (en) * | 2016-09-18 | 2017-05-31 | 佛山市国星光电股份有限公司 | A kind of RGBW display screens |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022002208A1 (en) * | 2020-07-01 | 2022-01-06 | 惠州视维新技术有限公司 | Dynamic backlight control method, dynamic backlight module, and storage medium |
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Application publication date: 20171229 |