CN100483709C - Light emitting diode packaging structure - Google Patents

Light emitting diode packaging structure Download PDF

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Publication number
CN100483709C
CN100483709C CNB2006101042064A CN200610104206A CN100483709C CN 100483709 C CN100483709 C CN 100483709C CN B2006101042064 A CNB2006101042064 A CN B2006101042064A CN 200610104206 A CN200610104206 A CN 200610104206A CN 100483709 C CN100483709 C CN 100483709C
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CN
China
Prior art keywords
light
emitting diode
diode chip
backlight unit
led
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Expired - Fee Related
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CNB2006101042064A
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Chinese (zh)
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CN101118900A (en
Inventor
李晓乔
吴易座
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Everlight Electronics Co Ltd
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Everlight Electronics Co Ltd
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Publication date
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Priority to CNB2006101042064A priority Critical patent/CN100483709C/en
Publication of CN101118900A publication Critical patent/CN101118900A/en
Application granted granted Critical
Publication of CN100483709C publication Critical patent/CN100483709C/en
Expired - Fee Related legal-status Critical Current
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Abstract

An encapsulation structure of the light emit diode comprises an encapsulation base, a red light emit diode chip, a blue light emit diode chip, a green light emit diode chip, an encapsulation material and a yellow phosphor powder. Wherein, three light emit diode chips are arranged in the containing space of the encapsulation base and are covered and protected by the encapsulation material; and the yellow phosphor powder is evenly mixed in the encapsulation material. After the three energized chips emit different color lights, the three color lights mix with each other and produce a white light, and the glue light emitted by the light emit diode chip induces the yellow phosphor powder to emit yellow light, after that part of the blue light is also mixed with the yellow light and becomes a white light.

Description

Package structure for LED
Technical field
The present invention relates to a kind of package structure for LED, and be particularly related to a kind of encapsulating structure that improves the color rendering of light-emitting diode.
Background technology
In recent years, light-emitting diode (light emitting diode; LED) use of assembly on lighting field presents progression and grows up.For example, light-emitting diode is applied in mobile phone, PDA and other electronic product widely.
Present existing part white light LEDs adopts red-light LED luminescence chip (red chip), green light LED luminescence chip (green chip), blue-ray LED luminescence chip (blue chip) mutual encapsulation in same assembly encapsulation structure body, produces white light by the mixing of three color of light.
Color rendering (color rendering index; Ra) being light presents the measurement of degree, just color degree true to nature to object color.The light source that color rendering is high also can be preferable to the expression power of color, and the color that representative is seen is near natural primary color.Yet general white light LEDs color rendering is not high, and for example tradition only reaches about 60~70 with its color rendering of device of red, blue, green three-color LED luminescence chip mixed light.
Therefore the light-emitting diode producer there's no one who doesn't or isn't is one of its developing goal with the white light LEDs that high color rendering is provided in design.
Summary of the invention
Therefore one of the present invention purpose is exactly in that a kind of LED encapsulating structure that improves color rendering is provided, in order to improve the color rendering of three look light-mixed type LED matrix.
Another object of the present invention is that a kind of LED encapsulating structure that improves color rendering is being provided, and is promoted the color rendering of LED by easy encapsulation step.
Another object of the present invention is that a kind of LED encapsulating structure that improves color rendering is being provided, and reduces the green light LED chip and excites the situation that drives with overcurrent, also makes the drive current of three light-emitting diode chip for backlight unit drive to unanimity.
According to above-mentioned purpose of the present invention, a kind of LED encapsulating structure is proposed, have the effect that improves color rendering.The LED encapsulating structure comprises encapsulation base, luminescence chip group, encapsulating material, fluorescent material.Encapsulation base has an accommodation space, and the luminescence chip group promptly is arranged in accommodation space.
The luminescence chip group comprises second light-emitting diode chip for backlight unit that sends first light-emitting diode chip for backlight unit of 510 nanometer to 550 nano wave length light through energising, sends 440 nanometer to 480 nano wave length light through energising, and the 3rd light-emitting diode chip for backlight unit that sends 600 nanometer to 630 nano wave length light through energising.
Encapsulating material is filled in the accommodation space, covers all chips, and the function of protection is provided.Fluorescent material evenly is mixed in the encapsulating material, can produce the exciting light of 560 nanometer to 600 nano wave lengths when being excited.
When electric current makes the led chip conducting by the electrode pin that is electrically connected at led chip, send the light time of corresponding wavelength, partly blue light was used for excitated fluorescent powder and sent gold-tinted this moment.Therefore not only ruddiness, blue light mix the formation white light with green glow, more have the auxiliary mechanism of yellow light mix part blue light to form white light, and the luminous efficiency of LED matrix is promoted, and color rendering also improves simultaneously.
In addition, aspect the chip drives size of current, also must ask raising, make whole drive current more tend to consistent because of the low blue light of must begging to surrender of green glow.
Describe the present invention below in conjunction with the drawings and specific embodiments, but not as a limitation of the invention.
Description of drawings
Figure 1A is the vertical view of LED encapsulating structure one preferred embodiment of the present invention;
Figure 1B is the sectional side view of LED encapsulating structure one preferred embodiment of the present invention;
Fig. 2 is another preferred arrangement mode of each led chip in the LED encapsulating structure of the present invention.
Wherein, Reference numeral
102: encapsulation base 104: encapsulating material
106: yellow fluorescent powder 108: accommodation space
110: 112: the first light-emitting diode chip for backlight unit of luminescence chip group
116: the second light-emitting diode chip for backlight unit of 114: the three light-emitting diode chip for backlight unit
122a, 124a, 126a: anode electrode pin
122b, 124b, 126b: negative electrode pin
214: the three emitting led chips of 212: the first emitting led chips
216: the second emitting led chips
Embodiment
The present invention discloses a kind of LED encapsulating structure that improves color rendering, by in encapsulating material, sneaking into yellow fluorescent powder, the white light that makes LED is except producing with three color contamination light, and wherein partly blue light more excites yellow fluorescent powder to produce gold-tinted, and then mixes the formation white light with it.Make in conjunction with this two effect that the luminous efficiency of light-emitting diode more promotes, color rendering is higher.
With reference to Figure 1A and Figure 1B, it is respectively the vertical view and the sectional side view of LED encapsulating structure one preferred embodiment of the present invention simultaneously.Wherein among Figure 1A for demonstrating accommodation space 108, encapsulating material is omitted.
In a preferred embodiment, the LED encapsulating structure that improves color rendering comprises an encapsulation base 102, a luminescence chip group 110, encapsulating material 104 and a fluorescent material 106, reaches an electrode pin group.
Encapsulation base 102 is with polyphthalamide (polyphthalamide; PPA), the structure of material injection molding such as epoxy resin, glass fibre, calcium oxide, have an accommodation space 108, in order to ccontaining luminescence chip group 110.
Luminescence chip group 110 comprises one first light-emitting diode chip for backlight unit 112, one second light-emitting diode chip for backlight unit 116 and one the 3rd light-emitting diode chip for backlight unit 114.First light-emitting diode chip for backlight unit 112 can send the light of the specific wavelength of 510 nanometer to 550 nanometers when electric energy is imported, for example be a green light LED chip.Second light-emitting diode chip for backlight unit 116 can send the light of the specific wavelength of 440 nanometer to 480 nanometers when electric energy is imported, for example be a blue-light LED chip.The 3rd light-emitting diode chip for backlight unit 114 can send the light of the specific wavelength of 600 nanometer to 630 nanometers when electric energy is imported, for example be a red LED chip.
Encapsulating material 104 fillings cover luminescence chip group 110 in accommodation space 108, in order to protecting three led chips, and make the light of led chip be exported to the outside.Encapsulating material 104 for example is epoxy resin, acryl or silica gel or its combination.
Fluorescent material 106 evenly is mixed in the encapsulating material 104, and the excitation spectrum peak value that is produced when being excited is 560 nanometer to 600 nanometers, for example is yellow fluorescent powder.Each coloured light that three led chips send produces white light when mixed light, and wherein second led chip 116 also has the function of excitated fluorescent powder 106.Produce an exciting light after fluorescent material 106 is excited, the blue light mixed light of this exciting light and second led chip 116 produces a white light.
The electrode pin group comprises anode electrode pin 122a, 124a, the 126a that is electrically connected at each chip positive pole, and the negative electrode pin 122b, 124b, the 126b that are electrically connected at each chip negative pole, enters an approach of chip so that the external electric energy conduction to be provided.
When external electric energy makes corresponding chip conducting by each anode electrode pin and each negative electrode pin, thereby inspire the light time of wavelength separately, wherein the part blue light that sends of blue-light LED chip 116 will excite yellow fluorescent powder 106, make it send sodium yellow, also have this moment partly blue light to mix mutually and become white light with gold-tinted.Remaining blue light then is mixed into white light with green glow, ruddiness.
Though the rounded projections arranged mode that is configured to of three led chips in the foregoing description, only the present invention is defined in this.And the relative position of each chip chamber is also non-to be limited to the described person of embodiment.For example the arrangement mode shown in the 2nd figure is another kind of preferable configuration, first emitting led chip the 212, the 3rd emitting led chip 214, the second emitting led chip 216 is arranged in line, in the middle of wherein the second emitting led chip 216 is positioned at, be beneficial to exciting of fluorescent material.
Because the sodium yellow that is inspired makes LED matrix of the present invention compared to the existing technology that only blendes together white light with RGB three-colour light-emitting led chip, more adds a color composition, thereby more near sunlight, has promoted color rendering.And the white light conversion efficient of the exciting light of blue light and 560 nanometer to 600 nano wave lengths is preferable.
In addition, in the application of backlight module,, occur as easily to avoid the green glow luminance shortage, and drive the green light LED chip in the mode of overcurrent driving (over drive) because of traditional RGB brightness ratio is about 3:6:1.Blue light partly then occurs as easily avoids brightness too high and only with little current drives blue-light LED chip.Cause the quite inconsistent situation of the whole drive current of LED matrix.
The present invention is because of adding a yellow fluorescent material, makes blue light institute comparatively to improve by a drive current, be responsible for simultaneously with the effect of yellow fluorescent material and with the effect of red, green two light; On the other hand, because the mixed light of blue light and gold-tinted is born the generation of a part of white light, make must the trying to achieve of green glow with reduction.Therefore with regard to whole structure, it is consistent that the electric current of tending to act of LED matrix more tends to, and reduced drop.Because the usage ratio of fluorescent material has influenced the brightness of last generation and the purity of white light integral body, therefore visual must asking and adjust this fluorescent material ratio.
By the invention described above preferred embodiment as can be known, apply the present invention to and have following advantage less.Compare with existing RGB three chip mixed light technology, the invention provides higher color rendering, when being applied to general lighting or backlight module, make the object of desiring to present color react more realistic colour.And also become white light to promote with yellow light mix on the luminous efficiency because of blue light.
Encapsulation step of the present invention and the existing additionally special installation of comparing not only will excite the fluorescent material of wave band 560 nanometer to 600 nanometers to sneak into when the making encapsulating material, sealing step again just make fluorescent material be placed in accommodation space to get final product together with encapsulating material.
And it is, preferable on conversion efficiency with the effect that the mixed light of blue light and gold-tinted produces white light.Existing about three color chips separately the inconsistent situation of drive current also obtained improvement.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.

Claims (4)

1, a kind of package structure for LED is characterized in that, comprises:
One encapsulation base has an accommodation space;
One luminescence chip group is positioned at this accommodation space, comprises:
One first light-emitting diode chip for backlight unit is in order to send a green glow of 510 nanometer to 550 nano wave lengths;
One second light-emitting diode chip for backlight unit is in order to send a blue light of 440 nanometer to 480 nano wave lengths; And
One the 3rd light-emitting diode chip for backlight unit is in order to send a ruddiness of 600 nanometer to 630 nano wave lengths;
One encapsulating material is arranged in this accommodation space, covering protection this first, second and the 3rd light-emitting diode chip for backlight unit; And
One fluorescent material, having wavelength is an excitation spectrum peak value of 560 nanometer to 600 nanometers, be mixed in this encapsulating material,
Wherein a part of and common mixed light of this ruddiness of this green glow, this blue light becomes a white light, and another of this blue light partly excites this fluorescent material to produce an exciting light, and become another white light with this exciting light mixed light, excite the situation that drives with overcurrent to reduce this first light-emitting diode chip for backlight unit.
2, package structure for LED according to claim 1 is characterized in that, this encapsulating material is the combination of epoxy resin, acryl or silica gel or these three kinds of materials.
3, package structure for LED according to claim 1 is characterized in that, described first, second is arranged in triangle with the 3rd light-emitting diode chip for backlight unit.
4, LED encapsulating structure according to claim 1 is characterized in that, described first, second arranged in line with the 3rd light-emitting diode chip for backlight unit.
CNB2006101042064A 2006-08-01 2006-08-01 Light emitting diode packaging structure Expired - Fee Related CN100483709C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006101042064A CN100483709C (en) 2006-08-01 2006-08-01 Light emitting diode packaging structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006101042064A CN100483709C (en) 2006-08-01 2006-08-01 Light emitting diode packaging structure

Publications (2)

Publication Number Publication Date
CN101118900A CN101118900A (en) 2008-02-06
CN100483709C true CN100483709C (en) 2009-04-29

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101661983B (en) * 2008-08-26 2012-03-14 富准精密工业(深圳)有限公司 Light emitting diode (LED) and preparation method thereof
CN101988637A (en) * 2009-07-31 2011-03-23 歌尔声学股份有限公司 White-light light-emitting diode (LED) light sourceS, manufacturing method thereof and street lamp using white-light LED sources
CN101958316B (en) * 2010-07-20 2013-01-16 上海亚明灯泡厂有限公司 LED integrated packaging power source module
CN102386290A (en) * 2010-08-30 2012-03-21 展晶科技(深圳)有限公司 Packaging structure of light-emitting diode
CN102956625A (en) * 2011-08-18 2013-03-06 鸿富锦精密工业(深圳)有限公司 Light-emitting device
CN102683335A (en) * 2012-04-26 2012-09-19 日月光半导体制造股份有限公司 Light-emitting diode package structure
CN111725193B (en) * 2019-03-20 2022-05-24 佛山市国星光电股份有限公司 LED device, LED lamp strip and brightening system
CN113741091A (en) * 2021-08-17 2021-12-03 惠州视维新技术有限公司 Backlight module and display device

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Granted publication date: 20090429

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