CN104377294B - A kind of light-emitting device - Google Patents
A kind of light-emitting device Download PDFInfo
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- CN104377294B CN104377294B CN201410627433.XA CN201410627433A CN104377294B CN 104377294 B CN104377294 B CN 104377294B CN 201410627433 A CN201410627433 A CN 201410627433A CN 104377294 B CN104377294 B CN 104377294B
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- light
- fluorescent material
- emitting
- chip
- emitting device
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- 239000000463 material Substances 0.000 claims abstract description 120
- 239000004065 semiconductor Substances 0.000 claims abstract description 36
- 230000005284 excitation Effects 0.000 claims abstract description 17
- 238000000295 emission spectrum Methods 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 15
- 230000003595 spectral effect Effects 0.000 claims description 8
- 150000004767 nitrides Chemical group 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 4
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 4
- 229910052771 Terbium Inorganic materials 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 3
- 229910052689 Holmium Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052772 Samarium Inorganic materials 0.000 claims description 3
- 229910052775 Thulium Inorganic materials 0.000 claims description 3
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims 1
- 206010023126 Jaundice Diseases 0.000 abstract description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 48
- RSEIMSPAXMNYFJ-UHFFFAOYSA-N europium(III) oxide Inorganic materials O=[Eu]O[Eu]=O RSEIMSPAXMNYFJ-UHFFFAOYSA-N 0.000 description 39
- 229910052808 lithium carbonate Inorganic materials 0.000 description 25
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 25
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 19
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 19
- 239000002994 raw material Substances 0.000 description 15
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten(VI) oxide Inorganic materials O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 15
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 14
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 12
- 238000009877 rendering Methods 0.000 description 11
- 238000002360 preparation method Methods 0.000 description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 8
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- 238000000695 excitation spectrum Methods 0.000 description 6
- 238000004020 luminiscence type Methods 0.000 description 6
- 229910000027 potassium carbonate Inorganic materials 0.000 description 6
- 229910000018 strontium carbonate Inorganic materials 0.000 description 6
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 description 6
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052573 porcelain Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical class [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910000019 calcium carbonate Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 3
- 238000000498 ball milling Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910002637 Pr6O11 Inorganic materials 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052789 astatine Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052909 inorganic silicate Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Inorganic materials [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 2
- 230000000280 vitalizing effect Effects 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 229910019626 (NH4)6Mo7O24 Inorganic materials 0.000 description 1
- 229910015667 MoO4 Inorganic materials 0.000 description 1
- -1 SmO3 Chemical compound 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002284 excitation--emission spectrum Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
- C09K11/597—Sulfates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/67—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals
- C09K11/68—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing refractory metals containing chromium, molybdenum or tungsten
- C09K11/685—Aluminates; Silicates
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
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- Chemical & Material Sciences (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention belongs to lighting engineering, display and optoelectronic areas, it is related to a kind of with the light-emitting device that can be excited the fluorescent material for sending red light by the light of 240～540nm of wave-length coverage, including more than at least two light-emitting components as excitation source, which is semiconductor luminous chip of the Emission Spectrum Peals in the UV-blue-green light regional extent of 240～540nm；And luminescent layer, which includes the light luminous fluorescent material received from the light-emitting component, the fluorescent material includes the fluorescent material of the fluorescent material of burn red and jaundice coloured light, it is respectively coated on after mixing on two semiconductor luminous chips, the launching light of the light-emitting component can be converted into light of the peak wavelength more than at least one in 600～700nm wave-length coverages by the fluorescent material of wherein described burn red.Fluorescent material in the present invention can improve the color developing and luminosity of existing white light LEDs, multi-chip structure novel form, reliability.
Description
Technical field
The invention belongs to lighting engineering, display and optoelectronic areas, be related to a kind of comprising can by wave-length coverage 240～
The light-emitting device of the excited fluorescent material for sending red light of the light of 540nm.
Background technology
LED (Light Emitting Diode) is a kind of energy conversion for converting electrical energy into luminous energy
Device, is following light source in the world, it is considered to be one of 21st century most promising high-technology field.As
Novel illumination technology, LED is with its long service life, power consumption is few, application is flexible, environmental protection, easy to adjust, luminescence response are fast
Many advantages, such as, just causing the revolution of a lighting field.With developing rapidly for blue in recent years, purple and ultraviolet LED,
So that LED replaces traditional electric filament lamp and fluorescent lamp to realize that illumination is possibly realized.
At present in prior art, realize that the mode of white light LEDs is mainly two kinds of approach：First, red, green, blue three is utilized
Plant LED combination and produce white light；2nd, corresponding fluorescent material is excited to realize white light by ultraviolet chip or blue chip.Consider
Practicality and the factor of inexpensive commercialization, second method are better than first method.Therefore synthesis has good luminous spy
The fluorescent material of property is the key for realizing white light LEDs.But, due to being limited by fluorescent material, prior art all has one
Fixed limitation.
In patent US 5998925, US 6998771, ZL00801494.9, all it is using blue chip excitation rare-earth cerium
The yttrium-aluminium-garnet fluorescent material of ion doping is (such as Y3Al5O12：Ce, (Y, Gd)3(Al, Ga)5O12：Ce, abbreviation YAG；Or terbium from
The garnet structure fluorescent material of son doping, abbreviation TAG), excite fluorescent material to send gold-tinted by blue chip blue with part
The blue light of color chip is combined out white light.In this method, the fluorescent material that used white light LEDs application and aspect of performance have
There is significant limitation.First, the excites scope of this fluorescent material is in the range of 420～490nm, maximally effective excites
In the range of 450～470nm, for short wavelength region and the green wavelength of UV light region and visible ray, this fluorescent material
Can not be excited；Secondly, the most strong emission peak positions maximum of the fluorescent material of this rear-earth-doped garnet structure can only be arrived
540nm or so, lacks red emission composition in its whole spectral region, causes the color rendering index of white light LEDs relatively low.
Is sulfide red fluorescent material as involved by patent US 6351069 and US 6252254, this phosphor
Material can be added in white light LEDs as complementary color component, in order to make up color rendering index, reduce colour temperature.But, sulfide phosphor
The luminosity of material is low, and its less stable, easily produces color drift in device use.Although color rendering index is improved,
But reduce the luminous efficiency of LED, and corrode chip, shorten the service life of LED.
From the foregoing, existing red fluorescence material luminosity is low, stability is poor, and its excitation wavelength is confined to purple
Outward, purple light and blue wave band (300～470nm), are not related to green light band scope.
Additionally, currently in order to solve the problems, such as white light LEDs color rendering propertiess, exciting YAG phosphors using blue light gallium nitride chip
Material and nitride red phosphor are packaged, or excite green nitrogen oxide fluorescent material using blue light gallium nitride chip
(or silicate) and nitride red phosphor are packaged the high colour developing white light LEDs of acquisition.Brightness during the former white light LEDs
Preferably but colour developing is not good, or brightness high-color rendering is not preferable.Additionally, the nitride and nitrogen oxygen employed in both modes
Compound fluorescent material, its preparation method are very harsh, and therefore price is costly.
Content of the invention
In view of the problem in the presence of above-mentioned prior art, a kind of light-emitting device of present invention offer, its structure are that multicore is tied
Structure, different from existing single structure, is coordinated with red fluorescence material and can produce white light, and the color rendering index of the white light for producing
High.
The technical scheme is that：
A kind of light-emitting device, including more than at least two light-emitting components as excitation source, which is Emission Spectrum Peals
Semiconductor luminous chip in the UV-blue-green light regional extent of 240～540nm；And luminescent layer, its include reception from
The light of the light-emitting component luminous fluorescent material, the fluorescent material include the fluorescent material of burn red and jaundice coloured light
Fluorescent material, be respectively coated on after mixing on two semiconductor luminous chips or be individually coated in different semiconductor light emittings
On chip.The fluorescent material of wherein described burn red can by the launching light of the light-emitting component be converted at least one with
On light of the peak wavelength in 600～700nm wave-length coverages.
Preferably, the chemical composition formula for sending the fluorescent material of red light is MaAbQcOdDe:Rf, wherein M be Li, Na,
At least one element in K, Mg, Ca, Sr, Ba, Be, Zn, Y, Gd, Ga；A is a kind of element in Li, Na, K, Bi；Q is selected from
At least one element in Mo, W；O is oxygen element；D is selected from Cl-、F-、Br-、I-、NH4+、Au+、Ag+In a kind of ion；R is choosing
At least one element from Eu, Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Sm, Yb, Lu, Sb, Tb, Mn, wherein Eu are to select
The element that selects；A, b, c, d, e, f be mole coefficient, 0.1≤a≤5,0.01≤b≤3,0<C≤8,1<D≤32,0≤e≤1,
0.001≤f≤1, and 0.1≤a+b+f≤9,4c=d+e.
Preferably, light-emitting component is for nitride semiconductor light-emitting chip or with the nitride semiconductor light-emitting core containing indium
Piece.
Preferably, light-emitting device also includes that radiating insulating substrate, the light-emitting component are arranged in the radiating insulating substrate.
Preferably, luminescent layer is dome-shaped.
Preferably, it is coated uniformly on after fluorescent material is mixed with transparent resin on the semiconductor luminous chip, together
It is arranged among reflector.
Preferably, the fluorescent material of epoxy resin and the fluorescent material for glowing and Yellow light-emitting low temperature is with 1:0.5：0.3
Mass ratio uniformly mixes, and is respectively coated with the semiconductor luminous chip.
Preferably, blue chip of the one of which semiconductor luminous chip for 465～467.5nm of wavelength, another group is ripple
The green glow chip of long 530.9～535nm.
The present invention also provides another kind of light-emitting device, including more than at least two light-emitting components as excitation source, its
In one group of light-emitting component be semiconductor luminous chip of the Emission Spectrum Peals in 395～400nm, another group of light-emitting component is transmitting
Spectrum peak 465～467.5nm semiconductor luminous chip or launching light spectral peak 530.9～535nm quasiconductor send out
Optical chip；And luminescent layer, comprising the light luminous fluorescent material that receive from the light-emitting component, the fluorescent material includes
The fluorescent material of the fluorescent material and blue light-emitting of burn red, is respectively coated on two quasiconductors after the fluorescent material mixing and sends out
On optical chip, the fluorescent material of the blue light-emitting can be swashed by the fluorescent material of wherein described burn red by the light-emitting component
At least a portion blue light that sends out and launch is converted into the peak wavelength more than at least one in 600～700nm wave-length coverages
Interior HONGGUANG, to obtain mixed high colour developing white light.
The beneficial effects of the present invention is：Fluorescent material employed in the present invention can be had by ultraviolet, purple light or blue green light
Effect is excited, the excitation wavelength range of the fluorescent material wide (for 240～540nm), luminous efficiency height, perfect crystalline, chemical property
Stable, the color developing and luminosity of existing white light LEDs can be improved.The multi-chip structure shape of the light-emitting device of the present invention
Formula is novel, reliable.Additionally, multi-chip assembled package is than existing RGB multi-chip packages low cost, circuit is simple and white light
LED luminance is high.
Description of the drawings
Below in conjunction with the accompanying drawings and instantiation is described in detail to the present invention, but following reality the invention is not limited in
Example.
Exciting light spectrograms of the Fig. 1 for the fluorescent material of the embodiment of the present invention 1.
Under Fig. 2 is for three different exciting lights (395nm, 466nm and 534nm) of the fluorescent material of the embodiment of the present invention 1
Launching light spectrogram.
Fig. 3 is that gained fluorescent material is luminous with F ion molal quantity 615nm is changed in embodiment of the present invention 1- embodiment 5
The change curve of intensity.
Fig. 4 a are the LED structure schematic diagram of fluorescent material used in 51 embodiment 52 of embodiment, are that single-chip LED lights
Device, including semiconductor luminous chip 1, fluorescent material 2, encapsulating material 3, pin 4, negative electrode 5, lead 6, anelectrode 7, reflective
Cup 8.
Fig. 4 b are the LED structure schematic diagram of fluorescent material used in embodiment 53, are multi-chip LED light-emitting device, including
Semiconductor luminous chip 1a, luminescence chip 1b, fluorescent material 2, encapsulating material 3, pin 4, negative electrode 5, lead 6, anelectrode 7,
Reflector 8.
Fig. 5 is the multi-chip LED cup structural representation using fluorescent material, including semiconductor luminous chip 1a, lights
Chip 1b, fluorescent material 2, package material 3.
Fig. 6 is the transmitting spectrogram of the red LED in embodiment 51, and vitalizing semiconductor chip wavelength is 465～467.5nm.
Fig. 7 is the transmitting spectrogram of the white light LEDs in embodiment 52, and vitalizing semiconductor chip wavelength is 465～467.5nm.
Fig. 8 is the transmitting spectrogram of the white light LEDs in embodiment 53 and embodiment 52.
Specific embodiment
Embodiments of the invention 1-61 is set forth below.It is to be noted that the present invention is not limited to these embodiments restrictions.
Fluorescent material involved in the present invention is the fluorescent material for glowing, and its excitation wavelength range is in 240～540nm
Interior, shown go out wave-length coverage in 610nm～620nm.The chemical general formula of the fluorescent material is：MaAbQcOdDe:Rf, wherein M
Be selected from, one or more elements in Li, Na, K, Mg, Ca, Sr, Ba, Be, Zn, Y, Gd, Ga, A is in Li, Na, K, Bi
Element is planted, Q is selected from least one element in Mo, W, and O is oxygen element.R be selected from Eu, Nd, Dy, Ho, Tm, La, Ce, Er, Pr,
At least one element in Sm, Yb, Lu, Sb, Tb, Mn, and Eu is essential element.D is selected from Cl-、F-、Br-、I-、NH4 +、Au+、Ag+
In a kind of ion.A, b, c, d, e, f are mole coefficient, its numerical value satisfaction：0.1≤a≤5,0.01≤b≤3,0<C≤8,1<d
≤ 32,0≤e≤3,0.001≤f≤1, and 0.1≤a+b+f≤9,4c=d+e.
In the following embodiments, the relative spectral power distributions and chromaticity coordinate of LED using PMS-50 types ultraviolet-can
See-near-infrared spectrum analysis system test.The excitation spectrum and emission spectrum of fluorescent material adopts F-4500 fluorescence spectrophotometer
Test.
Embodiment 1：Ca0.8Li0.1MoO4-xFx：Eu0.1The preparation of fluorescent material
Stoichiometrically composition weighs various raw materials of Ca CO3, Li2CO3, Eu2O3, MoO3, NH4F, wherein weighs NH4F rubs
It is 0,0.01,0.02,0.04,0.08,0.10 that your quality is 0,0.01,0.02,0.05,0.08,0.10, i.e. x values.By above 6
After the abundant ball milling mixing of group raw material is uniform, load in 99 porcelain crucibles, 500 DEG C are incubated 5 hours in air atmosphere, are then warmed up to
850 DEG C are incubated 4 hours, after sintered body is cooled down, crush, sieve, being classified the chemical composition obtained in the present invention and are
Ca0.8Eu0.1Li0.1MoO4：NH4The fluorescent material of F.Wherein Ca0.8Li0.1MoO3.92F0.08：Eu0.1Excitation spectrum such as Fig. 1 institutes
Show, as shown in Figure 2 its maximum is transmitted at 615nm the emission spectrum under different exciting lights, the NH of different content4F is to 615nm
The impact of place's luminous intensity is as shown in the line 1 in Fig. 3.
Embodiment 2：Ca0.72Li0.1MoO4-xFx：Eu0.96Sm0.04The preparation of fluorescent material
Stoichiometrically composition weighs various raw materials of Ca CO3, Li2CO3, Eu2O3, MoO3, SmO3, NH4F, wherein weighs NH4F
Molal weight be 0,0.01,0.02,0.05,0.08,0.10, i.e. x values be 0,0.01,0.02,0.04,0.08,0.10.Will be with
After the abundant ball milling mixing of upper 6 groups of raw materials is uniform, load in 99 porcelain crucibles, 500 DEG C are incubated 5 hours in air atmosphere, Ran Housheng
Temperature to 850 DEG C is incubated 4 hours, after sintered body is cooled down, crushes, sieves, being classified the chemical composition obtained in the present invention and is
Ca0.72Li0.1Mo O4-xFx：Eu0.96Sm0.04Fluorescent material.Its excitation and emission spectra characteristic is basically identical with embodiment 1.
The NH of different content4Impacts of the F to luminous intensity at 615nm is as shown in the line 2 in Fig. 3.
Embodiment 3：LiMo2O8-xF2x：The preparation of Eu fluorescent materials
Stoichiometrically composition weighs various raw materials of Ca CO3, Li2CO3, Eu2O3, MoO3, LiF, wherein weigh LiF mole
It is 0,0.01,0.02,0.04,0.08,0.10 that quality is 0,0.01,0.02,0.05,0.08,0.10, i.e. x values.By above 6 groups
After the abundant ball milling mixing of raw material is uniform, load in 99 porcelain crucibles, 500 DEG C are incubated 5 hours in air atmosphere, are then warmed up to
850 DEG C are incubated 4 hours, after sintered body is cooled down, crush, sieve, being classified the chemical composition obtained in the present invention and are
LiMo2O8-xF2x：The fluorescent material of Eu.Its excitation and emission spectra characteristic is basically identical with embodiment 1.LiF pair of different content
At 615nm, the impact of luminous intensity is as shown in the line 3 in Fig. 3.
Embodiment 4：LiW2O8-xF2x：The preparation of Eu fluorescent materials
Stoichiometrically composition weighs various raw material Lis2CO3, Eu2O3, WO3, LiF, the molal weight for wherein weighing LiF is
0th, 0.01,0.02,0.05,0.08,0.10, i.e. x values are 0,0.01,0.02,0.04,0.08,0.10.Above 6 groups of raw materials are filled
After bulb separation mill mix homogeneously, load in 99 porcelain crucibles, 500 DEG C are incubated 5 hours in air atmosphere, are then warmed up to 850 DEG C of guarantors
Temperature 4 hours, it is LiW after sintered body is cooled down, to crush, sieve, being classified the chemical composition obtained in the present invention2O8-xF2x：Eu's
Fluorescent material.Its excitation and emission spectra characteristic is basically identical with embodiment 1.The LiF of different content is to luminous intensity at 615nm
Impact as shown in the line 4 in Fig. 3.
Embodiment 5：LiW1.6Mo0.4O8-xF2x：The preparation of Eu fluorescent materials
Stoichiometrically composition weighs various raw material Lis2CO3, Eu2O3, WO3, LiF, the molal weight for wherein weighing LiF is
0th, 0.01,0.02,0.05,0.08,0.10, i.e. x values are 0,0.01,0.02,0.04,0.08,0.10.Above 6 groups of raw materials are filled
After bulb separation mill mix homogeneously, load in 99 porcelain crucibles, 500 DEG C are incubated 5 hours in air atmosphere, are then warmed up to 850 DEG C of guarantors
Temperature 4 hours, it is LiW after sintered body is cooled down, to crush, sieve, being classified the chemical composition obtained in the present invention1.6Mo0.4O8- xF2x：Eu.Its excitation and emission spectra characteristic is basically identical with embodiment 1.The LiF of different content is to luminous intensity at 615nm
Affect as shown in the line 5 in Fig. 3.
6 embodiment 37 of embodiment
The main raw material(s) in table 1 is pressed, preparation process is same as Example 1, prepare the change synthesized as shown in table 2
Learn the fluorescent material of structural formula.And give the luminous intensity in the case where three wavelength are excited of these materials.Its spectral characteristic with
Embodiment 1 is basically identical.
Raw material used by 1 embodiment 6-37 of table
| Embodiment | Main raw material(s) |
| 6 | SrCO3,Li2CO3,Eu2O3,NH4F |
| 7 | BaCO3,Li2CO3,Eu2O3,NH4F |
| 8 | SrCO3,Li2CO3,Eu2O3,NH4F,SmO3 |
| 9 | BaCO3,Li2CO3,Eu2O3,NH4F,SmO3 |
| 10 | Na2CO3,Eu2O3,MoO3,LiF |
| 11 | K2CO3,Eu2O3,MoO3,LiF |
| 12 | CaCO3,Eu2O3,NH4Cl,K2CO3 |
| 13 | BaCO3Eu2O3,NH4Br,Li2CO3 |
| 14 | Na2CO3, Eu2O3, MoO3, NH4F |
| 15 | K2CO3,Eu2O3,MoO3,NH4F |
| 16 | Li2CO3,NH4Cl,Eu2O3,MoO3 |
| 17 | Na2CO3,Eu2O3,WO3,LiF |
| 18 | K2CO3,Eu2O3,WO3,LiF |
| 19 | K2CO3,Eu2O3,WO3,NH4Br |
| 20 | CaCO3,Eu2O3,WO3,NaF |
| 21 | BaCO3,,Eu2O3,WO3,Li2CO3,LiF |
| 22 | SrCO3,Eu2O3,WO3,Li2CO3,LiF |
| 23 | CaCO3,Eu2O3,WO3,MoO3,NaF |
| 24 | BaCO3,Eu2O3,WO3,Li2CO3,MoO3,LiF |
| 25 | SrCO3,Eu2O3,WO3,Li2CO3,MoO3,LiF |
| 26 | BaCO3,Eu2O3,WO3,Li2CO3,MoO3,LiF,SmO3 |
| 27 | BaCO3,Eu2O3,WO3,Li2CO3,MoO3,LiF,SmO3,Dy2O3 |
| 28 | SrCO3,Eu2O3,WO3,Li2CO3,MoO3,LiF,Pr6O11 |
| 29 | BaCO3,Eu2O3,WO3,Li2CO3,MoO3,NH4Cl, |
| 30 | BaCO3,Eu2O3,WO3,Li2CO3,MoO3,NH4Br |
| 31 | Gd2O3,Eu2O3,MoO3 |
| 32 | Gd2O3,Eu2O3,MoO3,Li2CO3 |
| 33 | Gd2O3,Eu2O3,MoO3,Li2CO3,LiF |
| 34 | Y2O3,Eu2O3,MoO3 |
| 35 | Y2O3,Eu2O3,MoO3,Li2CO3 |
| 36 | Y2O3,Eu2O3,MoO3,Li2CO3,NH4F |
| 37 | Y2O3,Eu2O3,MoO3,Li2CO3,NH4F,SmO3 |
The chemical formula of 2 embodiment 6-37 of table and its characteristics of luminescence (excitation wavelength is 460nm)
38 embodiment 50 of embodiment
It is mainly selected from following raw material：K2CO3, Li2CO3, NaHCO3, Eu2O3, (NH4)6Mo7O24·6H2O, NH4F,
NH4Cl, SmO3, Dy2O3, Pr6O11, Bi2O3.Preparation process is same as Example 1, prepares the change synthesized as shown in table 3
Learn the fluorescent material of structural formula.And give the luminous intensity in the case where three wavelength are excited of these materials.Its spectral characteristic with
Embodiment 1 is basically identical.
The chemical formula of 3 embodiment 38-50 of table and its characteristics of luminescence
Embodiment 51- embodiment 57 is mainly selected from following raw material：Li2CO3, MoO3, WO3, CaCO3, BaCO3, SrCO3,
Eu2O3, NH4F, NH4Cl, SmO3.Preparation process is same as Example 1, prepares the chemical structural formula synthesized as shown in table 4
Fluorescent material.And give the luminous intensity in the case where three wavelength are excited of these materials.Its spectral characteristic and 1 base of embodiment
This is consistent.
The chemical formula of 4 embodiment 51-57 of table and its characteristics of luminescence
The invention further relates to using the light-emitting device of fluorescent material more than any one of present invention, more particularly to making
Be used as excitation source using light-emitting component transmitting semiconductor LED of the main peak in the range of 240～540nm be packaged into warm white
Light and red LED.In the present invention, packaged type can be shown in Fig. 4：Wherein Fig. 4 a are fluorescent material 2 and single quasiconductor
The mode of 1 directly contact of luminescence chip, fluorescent material 2 be coated uniformly on after mixing with transparent resin semiconductor luminous chip 1 it
On, it is arranged among reflector 8.Fig. 4 b are fluorescent material 2 and two and above semiconductor luminous chip 1a, 1b directly contact
Mode, fluorescent material 2 are coated uniformly on after being mixed with transparent resin on semiconductor luminous chip 1a, 1b.Fig. 5 shows twin-core
Structure in piece LED light emission device cup.
Below with specific embodiment in explanation.
The manufacture of 58 red LED device of embodiment
With the red fluorescence material described in embodiment 1, by the fluorescent material and epoxy resin with 0.4:1 mass ratio is equal
Even mixing, is coated on manufacture red LED device on semiconductor luminous chip.The red LED can have such as Fig. 4 a institutes
The conventional structure of description or such as the multi-chip structure described in Fig. 4 b and Fig. 5.Fig. 6 is the transmitting spectrogram of red LED, works as employing
When exciting HONGGUANG of 465～467.5nm wavelength light, the red LED of the present invention are had compared with using conventional red fluorescence material
There is higher emission effciency.
The manufacture of 59 Single chip white light LED light emission device of embodiment
The fluorescent material that mentions in the present invention is implemented in combination with white light LEDs with other fluorescent materials.Wherein other phosphors
Yellow silicate fluorescent material selected by material, and chemical formula is Sr2-xBaxSiO4：Eu2+.In mass ratio 1：0.4：0.2 hybrid epoxidized tree
Red fluorescence material and yellow silicate fluorescent material in fat, embodiment 23, is coated on semiconductor luminous chip and manufactures
White LED light-emitting device.The white light LEDs have the conventional structure as described by Fig. 4 a.Employ 465 in the present embodiment～
467.5nm the blue chip of transmitting.Fig. 7 is the transmitting spectrogram of the white light LEDs.This kind of yellow fluorescent material excites glimmering for broad band
Luminescent material, can effectively be excited and show white light by the chip of 460～470nm, and add the red fluorescence in the present invention
Material can optimize the color rendering index of conventional white light LEDs and colour temperature.After its encapsulation, the chromaticity coordinate of LED is X=0.3243, Y
=0.3227, colour temperature 5305K, color rendering index 89.
The manufacture of 60 multi-chip White LED light-emitting device of embodiment
The fluorescent material that mentions in the present invention is implemented in combination with white light LEDs with other fluorescent materials.Wherein other phosphors
Material is Sr from yellow silicate fluorescent material chemical formula2-xBaxSiO4：Eu2+.In mass ratio 1：0.5：0.3 hybrid epoxidized tree
Red fluorescence material and yellow silicate fluorescent material in fat, embodiment 23, is coated on semiconductor luminous chip and manufactures
White LED light-emitting device.The white light LEDs have the double-chip structure as described by Fig. 4 b.One of which chip be 465～
467.5nm transmitting blue chip, another group be 530.9～535nm green glow chip.Fig. 8 is the emission spectra of the white light LEDs
Figure.This kind of yellow fluorescent material excites fluorescent material for broad band, can effectively be excited by the chip of 460～470nm and be shown
Go out white light, and add color rendering index and the colour temperature that the red fluorescence material in the present invention can optimize conventional white light LEDs.Its
After encapsulation the chromaticity coordinate of LED be X=0.3243, Y=0.3227, colour temperature 5305K, color rendering index 88.
The manufacture of 61 multi-chip LED light-emitting device of embodiment
The white light LEDs have the double-chip structure as described by Fig. 4 b.The Emission Spectrum Peals of one of light-emitting component
In the range of ultraviolet light-purple light, other in which as the light-emitting component of excitation source Emission Spectrum Peals in blue light to green
In the scope of light, in the combination of the fluorescent material absorption excitation source for being used, at least a portion of the fluorescent material of blue light-emitting is blue
Light, and the blue light described at least a portion is converted into the peak wavelength more than at least one in 600～700nm wavelength models
Enclose interior emission spectrum to obtain mixed high colour developing white light.
In sum, fluorescent material luminous efficiency height of the present invention, perfect crystalline and stable chemical performance, LED are sent out
Electro-optical device color rendering index is high, and its double-chip structure is also different from existing LED chip structure form.
Claims (8)
1. a kind of light-emitting device, it is characterised in that：Including more than at least two light-emitting components as excitation source, described luminous
Element is semiconductor luminous chip of the Emission Spectrum Peals in the UV-blue-green light regional extent of 240～540nm；With luminous
Layer, comprising the light luminous fluorescent material that receive from the light-emitting component, the fluorescent material includes the fluorescence for glowing
Material and the fluorescent material of Yellow light-emitting low temperature, are respectively coated on two semiconductor luminous chips or single after the fluorescent material mixing
Solely it is coated on different semiconductor luminous chips；The chemical composition formula of the fluorescent material for sending HONGGUANG is
MaAbQcOdDe:Rf, wherein M is at least one element in Li, Na, K, Mg, Ca, Sr, Ba, Be, Zn, Y, Gd, Ga；A be Li,
A kind of element in Na, K, Bi；At least one elements of the Q in Mo, W；O is oxygen element；D is selected from Cl-、F-、Br-、I-、NH4 +、Au+、Ag+In a kind of ion；R is in Eu, Nd, Dy, Ho, Tm, La, Ce, Er, Pr, Sm, Yb, Lu, Sb, Tb, Mn
At least one element, wherein Eu are the elements that must be selected；A, b, c, d, e, f be mole coefficient, 0.1≤a≤5,0.01≤b≤
3,0<C≤8,1<D≤32,0≤e≤1,0.001≤f≤1, and 0.1≤a+b+f≤9,4c=d+e.
2. light-emitting device according to claim 1, it is characterised in that：Described light-emitting component is nitride semiconductor light-emitting
Chip or with containing indium nitride semiconductor light-emitting chip.
3. light-emitting device according to claim 1, it is characterised in that：The light-emitting device also includes radiating insulating substrate,
The light-emitting component is arranged in the radiating insulating substrate.
4. light-emitting device according to claim 1, it is characterised in that：The luminescent layer is dome-shaped.
5. light-emitting device according to claim 1, it is characterised in that：The fluorescent material is uniform after mixing with transparent resin
It is coated on the semiconductor luminous chip, is set along among reflector.
6. light-emitting device according to claim 5, it is characterised in that：Epoxy resin and the fluorescent material for glowing and
The fluorescent material of Yellow light-emitting low temperature is with 1：0.5：0.3 mass ratio uniformly mixes, and is respectively coated with the semiconductor luminous chip.
7. light-emitting device according to claim 1, it is characterised in that：One of which semiconductor luminous chip is wavelength 465
The blue chip of～467.5nm, another group of green glow chip for 530.9～535nm of wavelength.
8. a kind of light-emitting device, it is characterised in that：Including more than at least two light-emitting components as excitation source, one of which
Light-emitting component is semiconductor luminous chip of the Emission Spectrum Peals in 395～400nm, and another group of light-emitting component is launching light spectral peak
Be worth 465～467.5nm semiconductor luminous chip or launching light spectral peak 530.9～535nm semiconductor luminous chip；
And luminescent layer, comprising the light luminous fluorescent material that receive from the light-emitting component, the fluorescent material includes glowing
Fluorescent material and blue light-emitting fluorescent material, be respectively coated on two semiconductor luminous chips after fluorescent material mixing
On, the fluorescent material of the blue light-emitting can be excited by the light-emitting component and be launched by the wherein described fluorescent material for glowing
At least a portion blue light be converted into HONGGUANG of the peak wavelength more than at least one in 600～700nm wave-length coverages,
To obtain mixed high colour developing white light emitting device.
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| CN202996900U (en) * | 2012-12-27 | 2013-06-12 | 四川新力光源股份有限公司 | White light led device |
| CN103022328A (en) * | 2013-01-17 | 2013-04-03 | 上海中科高等研究院 | Solar simulator light source and realizing method thereof |
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