CN107526011B - High-power micro-discharge power loading system - Google Patents
High-power micro-discharge power loading system Download PDFInfo
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- CN107526011B CN107526011B CN201710752325.9A CN201710752325A CN107526011B CN 107526011 B CN107526011 B CN 107526011B CN 201710752325 A CN201710752325 A CN 201710752325A CN 107526011 B CN107526011 B CN 107526011B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/28—Provision in measuring instruments for reference values, e.g. standard voltage, standard waveform
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- H—ELECTRICITY
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Abstract
The embodiment of the invention discloses a high-power micro-discharge power loading system, which has the working frequency range of 0.8-2.5 GHz, continuous wave output power of more than 500W, three working modes of continuous wave, pulse and pulse plus continuous wave, can continuously work when the radio frequency of an output end is opened, and cannot be damaged by total reflection frequency power. The high-power micro-discharge power loading system of the embodiment of the invention comprises: the high-power amplifier comprises a final-stage high-power synthesis amplifier module, a high-power radio-frequency switch, a 0.8-1.4 GHz high-power harmonic filter, a 1.4-2.5 GHz high-power harmonic filter, a 0.8-1.4 GHz high-power circulator, a 1.4-2.5 GHz high-power circulator, a 0.8-1.4 GHz high-power load and a 1.4-2.5 GHz high-power load.
Description
Technical Field
The invention relates to the field of microwave electronic communication, in particular to a high-power micro-discharge power loading system.
Background
In recent years, with the development of space technology, microwave components are operated more and more powerfully, so that the possibility of micro-discharge in a space is greatly increased. When the microwave device works in a high-power state, the micro-discharge effect occurs when the power, the radio frequency and the internal structure size of the device meet a certain relation.
Once micro discharge is generated, serious consequences can be caused, so that the standing wave ratio of the microwave transmission system is increased, the reflected power is increased, the noise level is raised, and the system cannot work normally. High level microdischarges can cause breakdown, total reflection of radio frequency power, permanent destruction of components, and loss of communication channel operation. The method is based on that the micro-discharge can generate serious influence, and the micro-discharge generation mechanism is complex and is not completely mastered so far; meanwhile, the actual micro-discharge threshold value is lower than the designed micro-discharge threshold value due to the manufacturing process and process defects in the actual process, possible pollution in the storage process and other reasons; therefore, micro-discharge tests must be performed on the manufactured devices and the devices to be used, and particularly, a high-power micro-discharge power loading system is required to test and verify whether the microwave devices meet the design requirements or not when the working power of the microwave devices is increased.
Disclosure of Invention
The embodiment of the invention provides a high-power micro-discharge power loading system, which has the working frequency range of 0.8-2.5 GHz, the continuous wave output power of more than 500W, three working modes of continuous wave, pulse and pulse plus continuous wave, can continuously work when the radio frequency of an output end is opened, and cannot be damaged by the total reflection frequency power.
The embodiment of the invention provides a high-power micro-discharge power loading system, which comprises: the system comprises an input end unidirectional directional coupler, an ALC control module, a step attenuator module, a band-pass switch filter module, a preceding stage drive amplifier module, a final stage high-power synthesis amplifier module, a high-power bidirectional directional coupler, a high-power radio frequency switch, a 0.8-1.4 GHz high-power harmonic filter, a 1.4-2.5 GHz high-power harmonic filter, a 0.8-1.4 GHz high-power circulator, a 1.4-2.5 GHz high-power circulator, a 0.8-1.4 GHz high-power load, a 1.4-2 VAC.5 GHz high-power load, a 380-DC switch power supply, a DC-DC power voltage stabilizing module, an MCU main monitoring module, a power amplifier power supply bias module, a display screen module, a front panel control module, a fan power supply control module, a power detector and a temperature sensor;
the input end unidirectional directional coupler is connected with the ALC control module;
the ALC control module is connected with the step attenuator module;
the step attenuator module is connected with the band-pass switch filter module;
the band-pass switch filter module is connected with the preceding stage drive amplifier module;
the front-stage drive amplifier module is connected with the final-stage high-power synthesis amplifier module;
the final-stage high-power synthesis amplifier module is connected with the high-power bidirectional directional coupler;
the high-power bidirectional directional coupler is connected with the high-power radio frequency switch;
the high-power radio frequency switch is connected with the 0.8-1.4 GHz high-power harmonic filter and the 1.4-2.5 GHz high-power harmonic filter;
the 0.8-1.4 GHz high-power harmonic filter is connected with the 0.8-1.4 GHz high-power circulator; the 0.8-1.4 GHz high-power circulator is connected with the 0.8-1.4 GHz high-power load;
the 1.4-2.5 GHz high-power harmonic filter is connected with the 1.4-2.5 GHz high-power circulator; the 1.4-2.5 GHz high-power circulator is connected with the 1.4-2.5 GHz high-power load;
the ALC control module, the high-power bidirectional directional coupler and the power detector form a closed loop;
the input end unidirectional directional coupler is connected with the power detector in series and simultaneously transmits a power detection voltage value to the MCU main monitoring module;
the MCU main monitoring module is connected with the power amplifier power supply bias module and the high-power radio frequency switch;
the power amplifier power supply bias module is connected with the 380VAC-DC switching power supply;
the DC-DC power supply voltage stabilizing module is connected with the 380VAC-DC switching power supply;
the front panel control module is connected in parallel with the display screen module, the fan power supply control module, the main monitoring module, the power amplifier power supply bias module, the power detector and the temperature sensor through Can lines.
Preferably, the final-stage high-power synthesis amplifier module includes: 16-path 80W final amplifier, 3DB bridge, 4-path power synthesizer and 2-path power synthesizer;
the 16-path 80W final amplifier is connected with the 3DB bridge;
the 3DB bridge is connected with the 4 paths of power synthesizers;
the 4-path power synthesizer is connected with the 2-path power synthesizer.
Preferably, the final-stage high-power synthesis amplifier module further includes: a 2-path power divider and a 4-path power divider;
the 2-path power divider is connected with the 4-path power divider;
and the 4-path power divider is connected with the 3DB bridge.
Preferably, the input end unidirectional directional coupler is connected with a radio frequency signal input interface.
Preferably, the 0.8-1.4 GHz high-power circulator and the 1.4-2.5 GHz high-power circulator are both connected with a radio frequency signal output interface.
Preferably, the input end unidirectional directional coupler and the power detector are used for realizing detection of the over-input power voltage.
Preferably, the MCU main monitoring module is configured to control the power amplifier power supply bias module to be turned on or off by determining the magnitude of the input power.
Preferably, the MCU main monitoring module is further configured to perform power detection and conversion on the power detector and perform frequency band switching on the high-power rf switch.
Preferably, the MCU main monitoring module is further configured to perform over-power protection and over-standing-wave ratio protection.
Preferably, the power amplifier power supply bias module is configured to provide power for each stage of power amplifier module, monitor current, gate voltage, leakage voltage, and temperature of each path of power amplifier chip, and perform overcurrent, overvoltage, and overtemperature protection on the power amplifier chip.
According to the technical scheme, the embodiment of the invention has the following advantages:
the embodiment of the invention provides a high-power micro-discharge power loading system, which comprises: the system comprises an input end unidirectional directional coupler, an ALC control module, a step attenuator module, a band-pass switch filter module, a preceding stage drive amplifier module, a final stage high-power synthesis amplifier module, a high-power bidirectional directional coupler, a high-power radio frequency switch, a 0.8-1.4 GHz high-power harmonic filter, a 1.4-2.5 GHz high-power harmonic filter, a 0.8-1.4 GHz high-power circulator, a 1.4-2.5 GHz high-power circulator, a 0.8-1.4 GHz high-power load, a 1.4-2 VAC.5 GHz high-power load, a 380-DC switch power supply, a DC-DC power voltage stabilizing module, an MCU main monitoring module, a power amplifier power supply bias module, a display screen module, a front panel control module, a fan power supply control module, a power detector and a temperature sensor; the input end unidirectional directional coupler is connected with the ALC control module; the ALC control module is connected with the step attenuator module; the step attenuator module is connected with the band-pass switch filter module; the band-pass switch filter module is connected with the preceding stage drive amplifier module; the front-stage drive amplifier module is connected with the final-stage high-power synthesis amplifier module; the final-stage high-power synthesis amplifier module is connected with the high-power bidirectional directional coupler; the high-power bidirectional directional coupler is connected with the high-power radio frequency switch; the high-power radio frequency switch is connected with the 0.8-1.4 GHz high-power harmonic filter and the 1.4-2.5 GHz high-power harmonic filter; the 0.8-1.4 GHz high-power harmonic filter is connected with the 0.8-1.4 GHz high-power circulator; the 0.8-1.4 GHz high-power circulator is connected with the 0.8-1.4 GHz high-power load; the 1.4-2.5 GHz high-power harmonic filter is connected with the 1.4-2.5 GHz high-power circulator; the 1.4-2.5 GHz high-power circulator is connected with the 1.4-2.5 GHz high-power load; the ALC control module, the high-power bidirectional directional coupler and the power detector form a closed loop; the input end unidirectional directional coupler is connected with the power detector in series and simultaneously transmits a power detection voltage value to the MCU main monitoring module; the MCU main monitoring module is connected with the power amplifier power supply bias module and the high-power radio frequency switch; the power amplifier power supply bias module is connected with the 380VAC-DC switching power supply; the DC-DC power supply voltage stabilizing module is connected with the 380VAC-DC switching power supply; the front panel control module is connected in parallel with the display screen module, the fan power supply control module, the main monitoring module, the power amplifier power supply bias module, the power detector and the temperature sensor through Can lines. In the embodiment, the high-power radio frequency switch, the 0.8-1.4 GHz high-power harmonic filter, the 1.4-2.5 GHz high-power harmonic filter, the 0.8-1.4 GHz high-power circulator, the 1.4-2.5 GHz high-power circulator 12, the 0.8-1.4 GHz high-power load, the 1.4-2.5 GHz high-power load and the final-stage high-power synthesis amplifier module form a structure which outputs the 0.8-2.5G working frequency in two sections to realize that the continuous wave output power is more than 500W, and the structure has three working modes of continuous wave, pulse and continuous wave, can continue to work when the radio frequency of an output end is open, and cannot be damaged by the total reflection frequency power, thereby solving the problems that the existing power loading system can only divide the working frequency into a plurality of sections, the bandwidth of the microwave circulator is narrow, the power is very small, and in the process of carrying out the high-power micro-discharge test and verification of, thereby damaging the chip of the power amplifier.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive exercise.
FIG. 1 is a schematic diagram of an embodiment of a high power microdischarge power loading system provided in an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an embodiment of a final-stage high-power combining amplifier module provided in an embodiment of the present invention.
Detailed Description
The embodiment of the invention provides a high-power micro-discharge power loading system, which has the working frequency range of 0.8-2.5 GHz, the continuous wave output power of more than 500W, three working modes of continuous wave, pulse and pulse plus continuous wave, can continuously work when the radio frequency of an output end is opened, and cannot be damaged by the total reflection frequency power.
In order to make the objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the embodiments described below are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, an embodiment of a high power micro-discharge power loading system according to an embodiment of the present invention includes:
the system comprises an input end unidirectional directional coupler 1, an ALC control module 2, a step attenuator module 3, a band-pass switch filter module 4, a preceding stage drive amplifier module 5, a final stage high-power synthesis amplifier module 6, a high-power bidirectional directional coupler 7, a high-power radio-frequency switch 8, a 0.8-1.4 GHz high-power harmonic filter 9, a 1.4-2.5 GHz high-power harmonic filter 10, a 0.8-1.4 GHz high-power circulator 11, a 1.4-2.5 GHz high-power circulator 12, a 0.8-1.4 GHz high-power load 13, a 1.4-2.5 GHz high-power load 14, a 380VAC-DC switch power supply 15, a DC-DC power voltage stabilizing module 16, an MCU main monitoring module 17, a power amplifier bias module 18, a display screen module 19, a front panel control module 20, a fan power supply control module 21, a wave detector power 22 and a temperature sensor 23;
the radio frequency signal power amplifying part is sequentially connected in series and comprises an input end unidirectional directional coupler 1, an ALC control module 2, a step attenuator module 3, a band-pass switch filter module 4, a preceding stage driving amplifier module 5, a final stage high-power synthesis amplifier module 6, a high-power bidirectional directional coupler 7, a high-power radio frequency switch 8, a 0.8-1.4 GHz high-power harmonic filter 9, a 1.4-2.5 GHz high-power harmonic filter 10, a 0.8-1.4 GHz high-power circulator 11, a 1.4-2.5 GHz high-power circulator 12, a 0.8-1.4 GHz high-power load 13 and a 1.4-2.5 GHz high-power load 14. The power supply, monitoring, display and protection part comprises a 380V AC-DC switching power supply 15, a DC-DC stabilized power supply module 16, an MCU main monitoring module 17, a power amplifier power supply bias module 18, a display screen module 19, a front panel control module 20, a fan power supply control module 21, a power detector 22 and a temperature sensor 23.
The input end unidirectional directional coupler 1 is connected with the ALC control module 2;
the ALC control module 2 is connected with the step attenuator module 3;
the step attenuator module 3 is connected with the band-pass switch filter module 4;
the band-pass switch filter module 4 is connected with the preceding stage drive amplifier module 5;
the front-stage drive amplifier module 5 is connected with the final-stage high-power synthesis amplifier module 6;
the front-stage driving amplifier module 5 provides a high-gain and signal amplification driving source for the final-stage high-power synthesis amplifier module 6.
The final-stage high-power synthesis amplifier module 6 is connected with a high-power bidirectional directional coupler 7;
the high-power bidirectional directional coupler 7 is connected with a high-power radio frequency switch 8;
the high-power radio frequency switch 8 is connected with a 0.8-1.4 GHz high-power harmonic filter 9 and a 1.4-2.5 GHz high-power harmonic filter 10;
the 0.8-1.4 GHz high-power harmonic filter 9 is connected with the 0.8-1.4 GHz high-power circulator 11; the 0.8-1.4 GHz high-power circulator 11 is connected with a 0.8-1.4 GHz high-power load 13;
the 1.4-2.5 GHz high-power harmonic filter 10 is connected with a 1.4-2.5 GHz high-power circulator 12; the 1.4-2.5 GHz high-power circulator 12 is connected with a 1.4-2.5 GHz high-power load 14;
the ALC control module 2, the high-power bidirectional directional coupler 7 and the power detector 22 form a closed loop;
the ALC control module 2, the high-power bidirectional directional coupler 7 and the power detector 22 form a closed loop, and the protection of limiting setting of an output power value, overpower, an overpower standing wave ratio and the like is realized through detecting forward and reverse voltage of the output power.
The input end unidirectional directional coupler 1 is connected with a power detector 22 in series and simultaneously transmits a power detection voltage value to the MCU main monitoring module 17; the input end unidirectional directional coupler 1 and the power detector 22 realize the detection of the over-input power voltage, the input end unidirectional directional coupler 1 and the power detector 22 transmit the voltage value to the MCU main monitoring module 17, the input end unidirectional directional coupler 1 and the power detector 22 are in front of each other, the MCU main monitoring module 17 is behind, and the input end unidirectional directional coupler 1 and the power detector 22 simultaneously transmit the power detection voltage value to the MCU main monitoring module 17.
The MCU main monitoring module 17 is connected with a power amplifier power supply bias module 18 and a high-power radio frequency switch 8;
and the MCU main monitoring module 17 is used for controlling the power amplifier power supply bias module 18 to be switched on and switched off by judging the magnitude of the input power.
The MCU main monitoring module 17 is also used for carrying out power detection conversion on the power detector 22 and carrying out frequency band switching on the high-power radio frequency switch 8.
And the MCU main monitoring module 17 is also used for overpower protection and over standing wave ratio protection.
The MCU main monitoring module 17 judges the magnitude of the input power to control the power supply bias module 18 to turn on or off, thereby implementing the warning and power amplifier protection of the input power.
The power amplifier power supply bias module 18 is connected with a 380VAC-DC switching power supply 15;
the DC-DC power supply voltage stabilizing module 16 is connected with a 380VAC-DC switching power supply 15; and the DC-DC power supply voltage stabilizing module 16 is used for providing corresponding voltage for the control circuit.
The front panel control module 20 is connected in parallel with the display screen module 19, the fan power supply control module 21, the main monitoring module, the power amplifier power supply bias module 18, the power detector 22 and the temperature sensor 23 through Can lines.
The step attenuator module 3 and the front panel control module 20 realize gain attenuation adjustment and gain flatness adjustment of the system, the band-pass switch filter module 4 is divided into two sections of 0.8-1.4G and 1.4-2.5G, harmonic waves and clutter of input signals can be suppressed, meanwhile, wrong section protection can be well carried out, and the situation that a high-power circulator and a high-power harmonic filter behind are damaged due to wrong frequency bands of the input signals is avoided.
Further, the final-stage high-power synthesis amplifier module 6 includes: 16-way 80W final amplifier 204, 3DB bridge 203, 4-way power combiner 205 and 2-way power combiner 206;
a 16-way 80W final amplifier 204 is connected with the 3DB bridge 203;
the 3DB bridge 203 is connected with a 4-path power combiner 205;
the 4-way power combiner 205 is connected to the 2-way power combiner 206.
Further, the final-stage high-power synthesis amplifier module 6 further includes: a 2-path power divider 201 and a 4-path power divider 202;
the 2-path power divider 201 is connected with the 4-path power divider 202;
the 4-way power divider 202 is connected to a 3DB bridge 203.
Further, the input end unidirectional directional coupler 1 is connected with a radio frequency signal input interface.
Further, the 0.8-1.4 GHz high-power circulator 11 and the 1.4-2.5 GHz high-power circulator 12 are both connected with a radio frequency signal output interface.
Further, the input end unidirectional directional coupler 1 and the power detector 22 are used for realizing the detection of the over-input power voltage.
Further, the power amplifier power supply bias module 18 is configured to provide power to each stage of power amplifier module, monitor current, gate voltage, leakage voltage, and temperature of each path of power amplifier chip, and perform overcurrent, overvoltage, and overtemperature protection on the power amplifier chip.
The 380V AC-DC switching power supply 15, the DC-DC stabilized power supply module 16, the MCU main monitoring module 17, the power amplifier power supply bias module 18, the display screen module 19, the front panel control module 20, the fan power supply control module 21, the power detector 22 and the temperature sensor 23 are connected with other components through power lines and data lines.
The high-power S-band micro-discharge power loading system with the output power larger than 500W provided by the embodiment of the invention has three working modes of continuous wave, pulse and pulse plus continuous wave, can adjust the output power, frequency and gain in real time, remotely controls the switch, and has the functions of overvoltage, overcurrent, over-standing wave, over-excitation, over-temperature and fan disconnection protection. The power loading system has the advantages of excellent power amplification effect, long-time stable work, small nonlinear distortion and the like, equipment with the capability of resisting overdriving can bear the input level up to 2dBm for 24 hours, the performance and the service life of the system are not influenced, the capability of resisting load mismatch can bear the total reflection of power, and the performance and the service life of the system are not influenced. The power loading system can well solve the technical problems that when the microwave device is tested and verified in a high-power micro-discharge mode, the micro-discharge effect is caused due to the fact that the micro-discharge effect is generated due to the fact that the power capacity and the structural size of the microwave device are not enough, the radio-frequency power is totally reflected, and the micro-discharge power loading system is damaged.
The broadband high-power micro-discharge power loading system provided by the embodiment of the invention has the working frequency range of 0.8-2.5 GHz, the continuous wave output power is more than 500W, the power loading system can continue to work in the radio frequency open circuit at the output end, and the system cannot be damaged by the total reflection frequency power.
The micro-discharge power loading system provided by the embodiment of the invention has the advantages of wide frequency band, high gain and high power, can bear the total reflection of the power, can continue to work and is not damaged. The working frequency of the power loading system is 0.8-2.5 GHz, the impedance of the radio frequency input/output port is 50 omega, the output power of continuous waves is more than or equal to 500W, the power gain is more than or equal to 57dB, the gain flatness is less than or equal to +/-1.5 dB, the output power stability is less than or equal to +/-0.25 dB, the long-term gain stability is less than or equal to 1dBPP, the power gain adjusting range is 25dB (digital adjustment and stepping is 0.5dB), the harmonic suppression is less than or equal to-60 dBc, the stray suppression is less than or equal to-65 dBc, the input standing wave ratio is less than or equal to 1.3:1, and the output.
In the embodiment, the high-power radio frequency switch, the 0.8-1.4 GHz high-power harmonic filter, the 1.4-2.5 GHz high-power harmonic filter, the 0.8-1.4 GHz high-power circulator, the 1.4-2.5 GHz high-power circulator 12, the 0.8-1.4 GHz high-power load, the 1.4-2.5 GHz high-power load and the final-stage high-power synthesis amplifier module form a structure which outputs the 0.8-2.5G working frequency in two sections to realize that the continuous wave output power is more than 500W, and the structure has three working modes of continuous wave, pulse and continuous wave, can continue to work when the radio frequency of an output end is open, and cannot be damaged by the total reflection frequency power, thereby solving the problems that the existing power loading system can only divide the working frequency into a plurality of sections, the bandwidth of the microwave circulator is narrow, the power is very small, and in the process of carrying out the high-power micro-discharge test and verification of, thereby damaging the chip of the power amplifier.
Referring to fig. 2, a final-stage high-power combining amplifier module of a high-power micro-discharge power loading system is described in detail, and an embodiment of the final-stage high-power combining amplifier module provided in an embodiment of the present invention includes:
a 2-way power divider 201, a 4-way power divider 202, a 3DB bridge 203, an 80W final amplifier 204, a 4-way power combiner 205 and a 2-way power combiner 206.
The final-stage high-power synthesis amplifier module 6 is one of core modules of a high-power micro-discharge power loading system provided in the embodiment of the present invention, and is a 16-path 80W final-stage amplifier 204, and firstly combines two by two power synthesis into 8 paths through a 3DB bridge 203, then combines into 2 paths through a 4-path power synthesizer 205, and combines into 1 path of high-power output through a 2-path power synthesizer 206, which is a super-large-scale and ultra-wideband power synthesis mode, and the synthesis power reaches over 800W.
The 380V AC-DC switching power supply 15 is mainly used for converting high-voltage 380 AC into DC voltage 27V to be supplied to a system, and the DC-DC power supply voltage stabilizing module 16 is mainly used for supplying corresponding working voltage to a control circuit. The MCU main monitoring module 17 mainly performs power detection and conversion on the power detector 22, and also performs frequency band switching on the high-power switch. The power amplifier power supply bias board 18 obtains 27V working voltage from the AC-DC switching power supply to provide power for each stage of power amplifier module, wherein each stage of power amplifier module refers to a preceding stage power amplifier module and a final stage power amplifier module, monitors the current, grid voltage, leakage voltage and temperature of each path of power amplifier chip, and carries out overcurrent, overvoltage and overtemperature protection on the power amplifier chips, and the power amplifier chips refer to the amplifier chips in the preceding stage power amplifier module and the final stage power amplifier module. The front panel control module 20 is connected in parallel with the display screen module 19, the fan power supply control module 21, the main monitoring module 17, the power amplifier bias module 18, the power detector 22 and the temperature sensor 23 through Can lines, displays the forward power information, the reverse power information and the fault protection information on the display screen, and is also connected with a knob of the panel, and Can set the gain, the output power and the frequency of the power loading system.
The high-power radio frequency switch 8 and 0.8-1.4 GHz high-power harmonic filter 9, 1.4-2.5 GHz high-power harmonic filter 10, 0.8-1.4 GHz high-power circulator 11, 1.4-2.5 GHz high-power circulator 12, 0.8-1.4 GHz high-power load 13, 1.4-2.5 GHz high-power load 14 form two-section output to 0.8-2.5 GHz, because the harmonic of 0.8-1.25 GHz frequency band falls in the 0.8-2.5 GHz working frequency band, to realize higher harmonic suppression, it must be divided into two sections to realize, and the method of dividing into 0.8-1.4 GHz high-power harmonic filter 9 and 1.4-2.5 GHz high-power harmonic filter 10 frequency band to exchange is adopted. The combination of the 0.8-1.4 GHz high-power circulator 11, the 1.4-2.5 GHz high-power circulator 12, the 0.8-1.4 GHz high-power load 13 and the 1.4-2.5 GHz high-power load 14 breaks through the defects of narrow bandwidth, small power and the like of the existing circulator. The high-isolation circulator with the working frequency band of 0.8-2.5 GHz for power increasing is made into a single section, the known technology can only be divided into a plurality of sections, the power is very low, the micro-discharge power loading system divides the working frequency band of 0.8-2.5 GHz into two sections, so that the power capacity of the circulator is up to 1000W, the isolation is more than 15dB, and the loss is less than 0.6 dB. The high-power circulator 11 of 0.8-1.4 GHz, the high-power circulator 12 of 1.4-2.5 GHz, the high-power load 13 of 0.8-1.4 GHz, the high-power load 14 of 1.4-2.5 GHz, have solved the micro discharge power loading system in carrying on the high-power micro discharge test of microwave device and verifying the course, will not produce the micro discharge because of the device, form the total reflection of power, thus the technical matter of the chip of the power amplifier of the damage.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
The above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A high power microdischarge power loading system, comprising: the system comprises an input end unidirectional directional coupler, an ALC control module, a step attenuator module, a band-pass switch filter module, a preceding stage drive amplifier module, a final stage high-power synthesis amplifier module, a high-power bidirectional directional coupler, a high-power radio frequency switch, a 0.8-1.4 GHz high-power harmonic filter, a 1.4-2.5 GHz high-power harmonic filter, a 0.8-1.4 GHz high-power circulator, a 1.4-2.5 GHz high-power circulator, a 0.8-1.4 GHz high-power load, a 1.4-2 VAC.5 GHz high-power load, a 380-DC switch power supply, a DC-DC power voltage stabilizing module, an MCU main monitoring module, a power amplifier power supply bias module, a display screen module, a front panel control module, a fan power supply control module, a power detector and a temperature sensor;
the input end unidirectional directional coupler is connected with the ALC control module;
the ALC control module is connected with the step attenuator module;
the step attenuator module is connected with the band-pass switch filter module;
the band-pass switch filter module is connected with the preceding stage drive amplifier module;
the front-stage drive amplifier module is connected with the final-stage high-power synthesis amplifier module;
the final-stage high-power synthesis amplifier module is connected with the high-power bidirectional directional coupler;
the high-power bidirectional directional coupler is connected with the high-power radio frequency switch;
the high-power radio frequency switch is connected with the 0.8-1.4 GHz high-power harmonic filter and the 1.4-2.5 GHz high-power harmonic filter;
the 0.8-1.4 GHz high-power harmonic filter is connected with the 0.8-1.4 GHz high-power circulator; the 0.8-1.4 GHz high-power circulator is connected with the 0.8-1.4 GHz high-power load;
the 1.4-2.5 GHz high-power harmonic filter is connected with the 1.4-2.5 GHz high-power circulator; the 1.4-2.5 GHz high-power circulator is connected with the 1.4-2.5 GHz high-power load;
the ALC control module, the high-power bidirectional directional coupler and the power detector form a closed loop;
the input end unidirectional directional coupler is connected with the power detector in series and simultaneously transmits a power detection voltage value to the MCU main monitoring module;
the MCU main monitoring module is connected with the power amplifier power supply bias module and the high-power radio frequency switch;
the power amplifier power supply bias module is connected with the 380VAC-DC switching power supply;
the DC-DC power supply voltage stabilizing module is connected with the 380VAC-DC switching power supply;
the front panel control module is connected in parallel with the display screen module, the fan power supply control module, the MCU main monitoring module, the power amplifier power supply bias module, the power detector and the temperature sensor through Can lines.
2. The high power microdischarge power loading system according to claim 1, wherein said final stage high power combining amplifier module comprises: 16-path 80W final amplifier, 3DB bridge, 4-path power synthesizer and 2-path power synthesizer;
the 16-path 80W final amplifier is connected with the 3DB bridge;
the 3DB bridge is connected with the 4 paths of power synthesizers;
the 4-path power synthesizer is connected with the 2-path power synthesizer.
3. The high power microdischarge power loading system according to claim 2, wherein said final stage high power combining amplifier module further comprises: a 2-path power divider and a 4-path power divider;
the 2-path power divider is connected with the 4-path power divider;
and the 4-path power divider is connected with the 3DB bridge.
4. The high power microdischarge power loading system according to claim 3, wherein said input unidirectional directional coupler is connected to a radio frequency signal input interface.
5. The high-power micro-discharge power loading system according to claim 4, wherein the 0.8-1.4 GHz high-power circulator and the 1.4-2.5 GHz high-power circulator are both connected with a radio frequency signal output interface.
6. The high power microdischarge power loading system according to claim 5, wherein said input unidirectional directional coupler and said power detector are configured to perform over-input power voltage detection.
7. The high-power micro-discharge power loading system according to claim 6, wherein the MCU main monitoring module is configured to control the power amplifier power supply bias module to be turned on or off by determining the magnitude of the input power.
8. The high-power micro-discharge power loading system according to claim 7, wherein the MCU main monitoring module is further configured to perform power detection conversion on the power detector and perform frequency band switching on the high-power RF switch.
9. The high-power micro-discharge power loading system according to claim 8, wherein the MCU master monitoring module is further used for over-power protection and over-standing-wave ratio protection.
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| CN110635810B (en) * | 2018-06-22 | 2021-06-25 | 中国电子科技集团公司第二十九研究所 | Four-channel-to-one high-power transmitting system and channel hot switching method and application thereof |
| CN109164338B (en) * | 2018-07-20 | 2021-04-16 | 中国船舶重工集团公司第七O三研究所无锡分部 | High-power medium-voltage direct-current dry-type load device with online monitoring function |
| CN109188079A (en) * | 2018-11-07 | 2019-01-11 | 中电科仪器仪表有限公司 | A kind of vacuum micro discharge experiment test device and method |
| CN111385017B (en) * | 2020-03-10 | 2022-05-06 | 四川灵通电讯有限公司 | KA frequency band high power amplifier |
| CN112462666B (en) * | 2020-12-01 | 2021-11-02 | 成都沃特塞恩电子技术有限公司 | Split type high power source control system and split type high power source |
| CN113406985B (en) * | 2021-07-02 | 2022-11-15 | 中国科学院近代物理研究所 | All-solid-state power source system |
| CN114024515A (en) * | 2021-09-18 | 2022-02-08 | 中国电子科技集团公司第二十九研究所 | Dual-mode power amplifier |
| CN117833609A (en) * | 2024-01-05 | 2024-04-05 | 江苏神州半导体科技有限公司 | Pulse radio frequency power supply system |
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| CN103354468A (en) * | 2013-07-12 | 2013-10-16 | 成都林海电子有限责任公司 | L-band upconverter and upconversion method in bandwidth of 1.2GHz |
| CN104836549B (en) * | 2015-04-23 | 2018-07-10 | 中国电子科技集团公司第四十一研究所 | A kind of the pulse-modulated signal generation device and method of Multipactor detection top bottom power adjustable |
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