CN107516699A - 一种高亮led芯片的制备方法 - Google Patents
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Abstract
一种高亮LED芯片的制备方法,属于发光二极管芯片制备技术领域,在衬底上依次外延制备缓冲层、N‑GaN、MQW及P‑GaN,其中,P‑GaN周期性开孔,厚度为30~70nm;在P‑GaN表面用电子束蒸发或磁控溅射制备ITO;利用掩膜刻蚀方法使ITO和/或P‑GaN开孔;使用E‑gun在ITO、P‑GaN表面沉积金属纳米颗粒层,金属纳米颗粒层覆盖率为5%‑30%,厚度约1.5‑3nm,再经过600度30min热处理,金属纳米颗粒层自组装成5‑80nm的Au、Ag合金材料的纳米颗粒,即得高亮LED芯片。本发明制备得到的LED芯片的出光能力得到大幅提升,实现一种高亮LED芯片的制备。
Description
技术领域
本发明属于发光二极管(LED)芯片制备技术领域,在制备的LED外延片上使用电子束蒸发、磁控溅射等方式获得透明导电薄膜(ITO),在透明导电薄膜的表面制备直径约5-80nm的Au、Ag、Al合金材料的纳米颗粒。在指定位置制作PN金属电极,通过钝化层、减薄、划裂、点测、分拣等工艺制备成LED芯片成品。利用表面等离激元原理提高LED的内量子效率和光引出效率,获得高亮LED芯片的制备方法。
背景技术
LED器件由于优异的性能,被广泛应用由其在白光照明领域,已取代传统方式成为新一代固态照明光源。大功率高效LED,是目前的重要研发目标,受限于工艺水平与材料本身特性的影响,现阶段氮化镓基LED的外量子效率还有较大的提升空间。因此,如何提高LED的发光效率,设计制造出高亮度、高效率的LED,具有十分重要的研究与应用价值。利用金属纳米结构产生的表面等离激元既可以提高LED的内量子效率,又可以提高光取出效率。纳米点阵与量子阱位置关系和如何制备较小间距的高质量的纳米粒子点阵,以及金属点阵的覆盖率对LED光提取效率的影响等问题极大影响了表面等离激元增加LED光提取效率的理论研究和实际应用。
发明内容
本发明的目的是旨在利用了金属纳米粒子薄膜中的局域表面等离激元近场耦合增强LED的发光强度。实现一种高亮LED芯片的制备方法。
本发明的技术方案:
一种高亮LED芯片的制备方法,步骤如下:
在衬底上依次外延制备缓冲层、N型氮化镓层、多量子阱发光层、P型氮化镓层,用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;使用电子束热蒸发在透明导电薄膜表面沉积金属纳米颗粒层,再经过600度30min热处理,金属纳米颗粒层自组装成5-80nm的Au、Ag、Al合金材料的纳米颗粒,在指定位置制作PN金属电极,通过钝化层、减薄、划裂、点测、分拣等工艺制备成LED芯片成品,即得高亮LED芯片。
一种高亮LED芯片的制备方法,步骤如下:
在衬底上依次外延制备缓冲层、N型氮化镓层、多量子阱发光层及P型氮化镓层,用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;利用掩膜刻蚀方法使透明导电薄膜周期性开孔;再使用电子束热蒸发在透明导电薄膜、P型氮化镓层表面沉积金属纳米颗粒层,再经过600度30min热处理,金属纳米颗粒层自组装成5-80nm的Au、Ag、Al合金材料的纳米颗粒,在指定位置制作PN金属电极,通过钝化层、减薄、划裂、点测、分拣等工艺制备成LED芯片成品,即得高亮LED芯片。
一种高亮LED芯片的制备方法,步骤如下:
在衬底上依次外延制备缓冲层、N型氮化镓层、多量子阱发光层及P型氮化镓层;用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;利用掩膜刻蚀方法使透明导电薄膜全部、P型氮化镓层部分周期性开孔;使用电子束热蒸发在透明导电薄膜、P型氮化镓层表面沉积金属纳米颗粒层,再经过600度30min热处理,金属纳米颗粒层自组装成5-80nm的Au、Ag、Al合金材料的纳米颗粒,在指定位置制作PN金属电极,通过钝化层、减薄、划裂、点测、分拣等工艺制备成LED芯片成品,即得高亮LED芯片。
所述的P型氮化镓层的厚度为30~70nm。
所述的金属纳米颗粒层覆盖率为5%-30%,厚度约1.5-3nm。
所述的衬底为蓝宝石衬底。
本发明的有益效果:采用LED正向封装结构,在厚度范围为30~70nm的P-GaN层上使用电子束热蒸发技术配合热处理工艺形成5-80nm的Au、Ag、Al合金材料的纳米颗粒。形成表面等离激元在增加LED芯片外量子效率的同时提升LED量子阱的发光效率。利用减薄技术控制P-GaN层的厚度使金属纳米颗粒尽量靠近LED量子阱,以更好的实现纳米点阵与量子阱的近场耦合;为达到LED芯片最佳出光效果控制金属点阵的覆盖率在5%-30%范围内。使得LED芯片的出光能力得到大幅提升,进而实现一种高亮LED芯片的制备。
附图说明
图1是透明导电薄膜全部、P型氮化镓层部分周期性开孔,带有金属纳米颗粒层的正装结构LED芯片示意图。
图2是透明导电薄膜周期性开孔,带有金属纳米颗粒层的正装结构LED芯片示意图。
图3是在透明导电薄膜表面沉积金属纳米颗粒层的正装结构LED芯片示意图。
图中:1衬底;2缓冲层;3N-GaN;4MQW;5P-GaN;6ITO;
7金属纳米颗粒层。
具体实施方式
以下结合附图和技术方案,进一步说明本发明的具体实施方式。
实施例
一种高亮LED芯片的制备方法,步骤如下:
在蓝宝石衬底上依次外延制备缓冲层、N型氮化镓掺杂层(N-GaN)、多量子阱发光层(MQW)及P型氮化镓层(P-GaN),其中,P型氮化镓层部分周期性开孔,P型氮化镓层的厚度为50nm;用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;利用掩膜刻蚀方法使透明导电薄膜全部、P型氮化镓层部分周期性开孔;使用电子束热蒸发(E-gun)在透明导电薄膜、P型氮化镓层表面沉积金属纳米颗粒层,金属纳米颗粒层覆盖率为25%,厚度约2nm,再经过600度30min热处理,金属纳米颗粒层自组装成30nm的Au、Ag、Al合金材料的纳米颗粒,即得高亮LED芯片。
Claims (9)
1.一种高亮LED芯片的制备方法,其特征在于,步骤如下:
在衬底上依次外延制备缓冲层、N型氮化镓掺杂层、多量子阱发光层、P型氮化镓层,用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;使用电子束热蒸发在透明导电薄膜表面沉积金属纳米颗粒层,再经过600度30min热处理,金属纳米颗粒层自组装成5-80nm的Au、Ag、Al合金材料的纳米颗粒,即得高亮LED芯片。
2.一种高亮LED芯片的制备方法,其特征在于,步骤如下:
在衬底上依次外延制备缓冲层、N型氮化镓掺杂层、多量子阱发光层及P型氮化镓层,用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;利用掩膜刻蚀方法使透明导电薄膜周期性开孔;再使用电子束热蒸发在透明导电薄膜、P型氮化镓层表面沉积金属纳米颗粒层,再经过600度30min热处理,金属纳米颗粒层自组装成5-80nm的Au、Ag、Al合金材料的纳米颗粒,即得高亮LED芯片。
3.一种高亮LED芯片的制备方法,其特征在于,步骤如下:
在衬底上依次外延制备缓冲层、N型氮化镓掺杂层、多量子阱发光层及P型氮化镓层;用电子束蒸发或磁控溅射的制备方式,在P型氮化镓层表面制备一层透明导电薄膜;利用掩膜刻蚀方法使透明导电薄膜全部、P型氮化镓层部分周期性开孔;使用电子束热蒸发在透明导电薄膜、P型氮化镓层表面沉积金属纳米颗粒层,再经过600度30min热处理,金属纳米颗粒层自组装成5-80nm的Au、Ag、Al合金材料的纳米颗粒,即得高亮LED芯片。
4.根据权利要求1~3任一所述的制备方法,其特征在于,所述的P型氮化镓层的厚度为30~70nm。
5.根据权利要求1~3任一所述的制备方法,其特征在于,所述的金属纳米颗粒层覆盖率为5%-30%,厚度约1.5-3nm。
6.根据权利要求4所述的制备方法,其特征在于,所述的金属纳米颗粒层覆盖率为5%-30%,厚度约1.5-3nm。
7.根据权利要求1、2、3或6所述的制备方法,其特征在于,所述的衬底为蓝宝石衬底。
8.根据权利要求4所述的制备方法,其特征在于,所述的衬底为蓝宝石衬底。
9.根据权利要求5所述的制备方法,其特征在于,所述的衬底为蓝宝石衬底。
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CN109585625A (zh) * | 2018-12-05 | 2019-04-05 | 湘能华磊光电股份有限公司 | 一种透明导电膜、其制备方法及含此透明导电膜的led芯片 |
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CN110993754A (zh) * | 2019-12-04 | 2020-04-10 | 南京邮电大学 | 具有仿生金属纳米岛状结构的led管芯及其制备方法 |
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