CN107516690A - A kind of three-dimensional silicon substrate micro-nano photonic crystal solar cell - Google Patents
A kind of three-dimensional silicon substrate micro-nano photonic crystal solar cell Download PDFInfo
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- CN107516690A CN107516690A CN201710875369.0A CN201710875369A CN107516690A CN 107516690 A CN107516690 A CN 107516690A CN 201710875369 A CN201710875369 A CN 201710875369A CN 107516690 A CN107516690 A CN 107516690A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 239000010703 silicon Substances 0.000 title claims abstract description 109
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 109
- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 55
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- 239000000463 material Substances 0.000 claims abstract description 26
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Abstract
The invention belongs to technical field of solar batteries, is related to a kind of three-dimensional silicon substrate micro-nano photonic crystal solar cell, and preceding contact layer downside is provided with preceding electrode；It is three-dimensional silicon substrate micro-nano photonic crystal solar battery structure between preceding electrode and back electrode, the upper strata of three-dimensional silicon substrate micro-nano photonic crystal solar battery structure is n-type silicon semiconductor layer, lower floor is p-type silicon semiconductor layer, preceding electrode is embedded in the linear defect wave-guide bottom of n-type silicon semiconductor layer, and p-type silicon semiconductor energy forms plane with back electrode；The bottom of back electrode is provided with back contact, and back electrode is arranged on the slower rays area or forbidden band area of p-type silicon semiconductor layer；Its thickness is small, save material, carrier diffusion apart from it is short, stability is good, efficiency of transmission is high；Three-dimensional structure is regular, and flexible and changeable, and it is processed and complex technique is ripe, can turn into most potential, inexpensive, high performance solar batteries device of new generation.
Description
Technical field：
The invention belongs to technical field of solar batteries, is related to a kind of new photonic crystal solar battery structure, special
It is not that one kind makes full use of illumination, sunken light and forbidden photon band and slow light effect are organically combined, photoelectric transformation efficiency is high, material section
The efficient three-dimensional silicon substrate micro-nano photonic crystal solar cell saved.
Background technology：
Solar cell is a kind of semiconductor devices for converting light energy into electric energy, is the important form of Solar use.
Although having much according to matrix material division solar cell species, widely used at present is silica-based solar cell, this
It is that photoelectric transformation efficiency is high because silicon material enriches, photoelectric properties stability and reliability are high, and technology is ripe,
Without toxic element, environment is not polluted, what the factor such as market acceptance level height determined.
The essence of silica-based solar cell is the PN junction of a large area, and the basis of energy conversion is the light using PN knots
Raw Volta effect, is converted solar energy into electrical energy.At present industrialization, large-scale production silicon substrate PN junction material technology into
Ripe, but solar battery efficiency is constantly subjected to limit, in order that solar cell obtains more common application, silicon substrate is too at present
The emphasis direction of positive energy battery research has two：First, improve photoelectric transformation efficiency；Second, reduce cost.Belle experiment in 1954
Monocrystaline silicon solar cell efficiency prepared by room only has 5.4%, and the silicon solar cell substrate thickness at initial stage is thicker；With
Several years afterwards, the efficiency of monocrystalline silicon battery increased 10%；After first time energy crisis in 1973, solar cell research adds
It hurry up, not only efficiency improves, and cost also constantly declines.Into 21 century, for green and sustainable development, the sun
The research of energy battery enters fast traffic lane.Now, the thickness of silicon substrate can be reduced to 150~200 μm from 350~400 μm, battery
Efficiency do not significantly reduce, such as the solar cell that German Fraunhofer companies make, efficiency can reach 23.1%.But
It is that when thickness is reduced, the loss of transmitted light can also increase traditional solar cell with the reduction of thickness.Theoretical calculation table
It is bright：When material is as thin as 50 μm, due to being thinned for cell thickness, structure is received to the absorption efficiency of longer-wave photons to be lowered.Research shows：
Light trapping structure is only used, just can guarantee that the photoelectric transformation efficiency of battery, except battery enters smooth surface anti-reflection and preceding electrode as far as possible less
Outside area coverage, for existing sunken light mode mainly after light is injected in cell body, increase light makes suction in the path of absorbed layer
Receive the big lower floor's textured material thereon of refractive index of layer, the light for making not absorb again returns to battery obsorbing layer, carry out it is secondary or
Repeatedly absorb, for example using single or multiple lift antireflective film, in the antireflective film that silicon face one layer of refractive index of deposition gradually changes, or incite somebody to action
Anti-reflection membrane technology and surface wool manufacturing technology are combined, and prepare antireflective film with suede structure etc., but these technologies are present instead
Ejected wave section is narrower, and the deficiencies of preparation technology more difficult control, majority research is under test.
Recently, researching and proposing silicon nanowires (or hole) may most potential, inexpensive, high performance solar batteries device material
One of material, silicon nanowires can increase light absorbs, but existing research is mostly the nano solar battery structure of one-dimentional structure, is adopted
Mechanism is to fall into light by diffusing reflection, and some have researched and proposed radial direction silicon nanowires two-dimensional structure, but its manufacture craft is answered
It is miscellaneous, also do not combine with the forbidden band and slower rays theory of photon crystal structure.Chinese patent ZL201410504341.2 is disclosed
A kind of two-dimentional silicon substrate micro-nano photonic crystal solar cell, it is brilliant that ZL20151019657.5 discloses a kind of two-dimentional silicon based photon
Body solar cell, both two-dimentional silicon-based solar cell structures have forbidden photon band and slow light effect, thickness it is small, fall into light
Advantage good, photoelectric transformation efficiency is high, the most crucial part of silica-based solar cell is PN junction, the photovoltaic effect of PN junction,
Convert solar energy into electrical energy, if wire connection load, can just produce direct current in circuit, in the reality of solar cell
In work, two aspects, optical loss and electricity loss can be attributed to by influenceing the principal element of solar battery efficiency, wherein most
Principal element is optical absorption, and its major influence factors has：(1) loss of surface reflection；(2) cell body can not fine earth subsidence
Light, light, which incides, to be fully absorbed；(3) loss of smooth surface electrode material area coverage to incident light gross energy etc. is entered；
The influence factor for causing electricity to lose has：(1) photo-generated carrier meets the life-span；(2) directed movement of photo-generated carrier is not
By force；(3) influence of structure equivalent series resistance, in existing solar cell, both effects can cause battery close to 70%
Energy loss.Therefore, a kind of three-dimensional silica-based solar cell of new structure is designed, not only increases the surface of cell body, and
And with sunken optical property well；The preceding electrode of structure organically combines with broadband linear defect wave-guide, reduces the masking to light；It is wide
Band slow light effect can increase carrier directed movement；Three-dimensional structure makes equivalent gate electrode resistance reduction, short circuit current accordingly increase；
Optical absorption, and can promotion opto-electronic conversion can be increased, it is more efficient.
The content of the invention：
The shortcomings that it is an object of the invention to overcome existing solar battery structure to exist, design a kind of illuminating area it is big,
Fall into the novel three-dimensional silicon substrate micro-nano photon that processing and large-scale production were saved, were easy to good light, high conversion efficiency, Stability Analysis of Structures, material
Crystal solar cell.
To achieve these goals, agent structure of the invention includes preceding contact layer, preceding electrode, three-dimensional silicon substrate micro-nano photon
Crystal solar battery structure, back electrode and back contact；Preceding contact layer downside made of transparent conductive oxide TCO materials
It is provided with the preceding electrode of periodic arrangement；It is three-dimensional silicon substrate micro-nano photonic crystal solar cell knot between preceding electrode and back electrode
Structure, the upper strata of three-dimensional silicon substrate micro-nano photonic crystal solar battery structure is n-type silicon semiconductor layer, and lower floor is p-type silicon semiconductor
Layer, n-type silicon semiconductor layer and p-type silicon semiconductor layer form PN junction；N-type silicon semiconductor is to have forbidden band and slow with three-dimensional silica base band
The nano-photon crystal medium post or air pore structure of luminous effect, including forbidden band area scattering member, forbidden band area scatter first gap, slower rays
Area's scattering member, slower rays area scatter first gap and linear defect wave-guide；Forbidden band area scattering member is formed between adjacent forbidden band area scattering member
Gap, more than seven rows forbidden band area scattering member and forbidden band area scatter first gap composition forbidden band area；Adjacent slower rays area scattering member
Between form slower rays area and scatter first gap, preceding electrode is embedded in linear defect wave-guide bottom, and respectively there is symmetrical 1-3 linear defect wave-guide both sides
Row slower rays area scattering member；The slower rays area scattering member of 1-3 rows, slower rays area scatter first gap and linear defect wave-guide composition slower rays area；In n
Forbidden band area and slower rays area are periodically alternately arranged in type silicon semiconductor, and the space arrangement of n-type silicon semiconductor is triangular crystal lattice, four
Prismatic crystal lattice or alveolate texture；P-type silicon semiconductor is that thickness is more than 50 μm of single semiconductor structure, p-type silicon semiconductor energy with
Back electrode forms plane；The bottom of back electrode is provided with back contact, the material of back contact it is identical with the material of preceding contact layer or
It is different；The back electrode of aluminium laminate structure is arranged on the slower rays region or forbidden band region of p-type silicon semiconductor layer.
Preceding contact layer of the present invention is single slab construction or is and three-dimensional silicon substrate micro-nano photonic crystal solar cell
The identical complementary structure of structural thickness；Preceding electrode is lap siding or net like structure, its concrete structure and three-dimensional silicon substrate micro-nano light
Sub- crystal solar battery structure is related.
Forbidden band area of the present invention scattering member and slower rays area scattering member are circular segment, ellipse, crescent or sector, due to
The centre frequency of forbidden band may not overlap with the frequency of slower rays, to realize more preferably slower rays effect, forbidden band area scattering member and slower rays
Scattering member in area's is first using the scattering of different structure, to adapt to respective normalized frequency.
Back electrode of the present invention is single thin layer, and the shape of back electrode is identical with the shape of preceding electrode, is vertical
Column or net like structure.
When scattering member in forbidden band area of the present invention and slower rays area scattering member are circular segment or ellipse is, if n-type silicon is partly led
The lattice constant of body is a, and parameter b and c represent circular segment respectively or ellipse scatters first major axis and the radius of short axle, and h is scattering
First height, defined parameters e=1-c/b, e=0-1 (dissymmetrical structure has 2 different values due to short axle difference e), parameter a,
E, h changes according to the requirement of forbidden band and slower rays, three-dimensional silicon substrate micro-nano photonic crystal solar battery structure include forbidden band area and
Slower rays area Liang Zhong regions：
(1) forbidden band area：Forbidden band area scatters member by forbidden band areas more than 7 rows and forbidden band area scatters first gap and formed, incident light
Or its component can not have good light trapping effect to vertically propagating；Three-dimensional forbidden band area is not only than the taboo of peacekeeping two dimension
Zone has larger specific surface area, and it scatters first height h between 50 μm -150 μm, and structure is in picturesque disorder, energy edge etc.
Difference series or the change of other curved surfaces, sunken light ability is strong, and its bottom is flat structures or stepped change, is turned with being advantageous to photoelectricity
Change；Using plane wave expansion method analog simulation design parameter, (three-dimensional structure calculating is more numerous and more jumbled, can provide branch by RSOFT softwares
Hold), scattering primitive root according to be actually needed can with constant, can also gradual change and rotation, scatter the size and height, lattice constant etc. of member
Parameter adjustable, the forbidden photon band of n-type silicon semiconductor is set to include 350~1050nm frequency field；Processing factors are taken into full account, are kept away
Exempt from complex-curved structure, its bottom uses flat structures or stepped change, and by Programmed Design and processing, structure is easy to
Complete, be also beneficial to save material；
(2) slower rays area：Slower rays area is between lap siding or net like structure, including slower rays area scattering member, slower rays area scattering member
Gap and linear defect wave-guide, form the broadband slow optical wave guide of dispersion very little；Because the centre frequency of forbidden band may not be with the frequency of slower rays
Overlap, the slower rays scattering member in slower rays area is different from forbidden band area scattering member, to adapt to respective normalized frequency, reaches more preferably
Slower rays effect；Although slower rays scattering member only has 1-3 rows, scattering member and scatter first gap and there are a variety of changes, for example, it is size, flat
Shifting, gradual change and deflection etc., to ensure the realization of broadband slow light effect；Linear defect wave-guide is 1-2 times of lattice constant, and slower rays group rolls over
Penetrate rate ngIt is expressed as with the relation of dispersion：
In formula, c is the light velocity, vgIt is the group velocity of photon, k is wave number, and ω is the center angular frequency of incidence wave, neffTo have
Refractive index is imitated, their relation is k=2 π neff/ λ, λ are operation wavelength, its normalized frequency f=ω a/2 π c；To slower rays
Speech, usual ng＞ ＞ neff, it is possible thereby to release：
For information transfer structure, in order to ensure that signal is undistorted, the structure of low dispersion is obtained, must be requested that ngKeep
Stable, i.e., in certain frequency range, f and k keep linear change；In order to think poorly of dispersion slow optical, by ± 10% as folding
Penetrate rate ngExcursion be referred to as low dispersion, and introduce dimensionless scalar product D as measurement foundation：D values are bigger, the slower rays of structure
Broadband effects are better, see formula (3), and wherein ω is normalized frequency, and Δ ω is with refractive index ng± 10%, which becomes the standard that turns to, chooses；
D=ng×Δω/ω (3)
Solar battery structure in the present invention low chromatic dispersion structure, the requirement to slower rays need not have at 2 points well：One
Be slower rays broadband it is larger, so taking centre frequency ± 5 or 10% ± 10% bandwidth as effective slower rays；Second, group reflects
The average value of rate is relatively large, that is, takes in the range of centre frequency ± 10%, passes through the average value n of group indexavgTo weigh photon
Group velocity, so, in the range of one fixed width, corresponding group index average is bigger, signify photon have it is smaller
Average group velocity, thus enters new dimensionless scalar product D ':
D'=navg×Δω/ω (4)
Moreover, slower rays area thickness only has 50 μm, preceding electrode is just embedded in linear defect wave-guide, so design the advantages of be：
One is due to that preceding electrode is embedded in linear defect wave-guide bottom, few to the inhalation effects of illumination；Second, slower rays plot structure makes the group of light
Speed diminishes, and is easy to absorption of the material to light, so as to produce more carriers and keep its stable displacement；Third,
Preceding electrode and back electrode it is closer to the distance, greatly reduce the compound of carrier, equivalent gate electrode resistance is also accordingly reduced, so as to
Improve the photoelectric transformation efficiency of battery.
Three-D photon crystal solar battery structure of the present invention is made up of forbidden band area and slower rays area periodic arrangement
, there are many advantages in terms of increase falls into light and light absorbs：N-type silicon semiconductor has larger specific surface area；Forbidden band structure has
There is sunken luminous effect, incident light is gradually absorbed in silicon linear array by multiple reflections back and forth；Slower rays structure has wide well
Band slow light effect, is easy to absorption of the material to photon, so as to produce more carriers, also ensure that the direction of carrier flow
Property and stability, ensure that the progress of effective opto-electronic conversion；Meanwhile preceding contact is made in transparent conductive oxide TCO materials
Layer can reduce reflection, and preceding electrode and back electrode form circuit for the carrier of photovoltaic effect and prepared, and preceding electrode shading is few, the back of the body
Contact layer can also increase instead to incident light, and these can improve the efficiency of battery.
Three-dimensional silicon based photon crystal structure is used in the present invention, the deficiencies in the prior art can be largely overcoming,
Its main advantage is as follows：First, three-dimensional silicon based photon crystal structure can be effective by adjusting the factors such as the first pillar height degree of scattering and shape
Ground increases the area of illumination；Second, three-dimensional silicon based photon crystal structural scattering member can use circular segment, ellipse, crescent and fan
The scattering member such as shape, and by modes such as gradual change, asymmetry, deflection and translations, preferably by the forbidden band characteristic of photonic crystal, slower rays
Characteristic is combined with the Dominant Facies of three-dimensional silicon substrate nanostructured, forms sunken luminous effect well；Third, three-dimensional silicon based photon crystal knot
Structure not only limits the propagation path and circulation way of light, and contact layer before increase is carried out to incident light anti-reflection, battery structure
Several aspects such as effectively sunken light and opto-electronic conversion, reduction Carrier recombination combine；Fourth, for the ease of processing and advising
Mould produces, and is calculated by simulating, and the three-dimensional solar battery structure of design is succinct and effective (bottom flat or stepped change),
On the premise of material and cost is not increased, reach the purpose for optimizing and improving battery efficiency on the whole.
The present invention compared with prior art, using three-dimensional silicon substrate micro-nano photonic crystal solar battery structure, not only shading
Less, the absorption of light is added, is also beneficial to the transmission of carrier；Forbidden photon band and slower rays principle are turned applied to solar photoelectric
Change, forbidden band structure has a sunken luminous effect well, and slower rays structure is the line defect structure of the low dispersion in broadband, in larger frequency band range
The group velocity of light diminishes, and is easy to material more preferably to absorb photon, produces more carriers, and ensures the directionality of carrier flow
And stability；Three-dimensional structure general thickness is far below the thickness of traditional silicon solar cell, saves material, carrier diffusion distance
It is short, stability is good, efficiency of transmission is high；The structure of three-dimensional structure modeling takes into full account processing factors, not only compound with regular structure, Er Qieke
With flexible and changeable, corresponding processing and complex technique are ripe, can be as a new generation is most potential, inexpensive, high-efficiency solar is electric
Pond device.
Brief description of the drawings：
Fig. 1 is the agent structure principle schematic of the present invention.
Fig. 2 is former the present invention relates to the structure of the three-dimensional silicon substrate micro-nano photonic crystal solar battery structure in embodiment 1
Schematic diagram is managed, wherein Fig. 2 (1) is top view；Fig. 2 (2) is stereogram.
Fig. 3 is the forbidden band figure in forbidden band area in the embodiment of the present invention 1, wherein, transverse axis is space different directions, and the longitudinal axis is normalizing
Change frequency.
Fig. 4 is group index curve in the embodiment of the present invention 1, and wherein transverse axis is normalized frequency f, and the longitudinal axis is wave number.
Fig. 5 is that the structural principle of the three-dimensional silicon substrate micro-nano photonic crystal solar battery structure in the embodiment of the present invention 2 shows
It is intended to, wherein Fig. 5 (1) is top view；Fig. 5 (2) is stereogram.
Fig. 6 is the forbidden band figure in forbidden band area in the embodiment of the present invention 2, and wherein transverse axis is parameter e values, and the longitudinal axis is normalization frequency
Rate.
Fig. 7 is group index curve in the embodiment of the present invention 2, and wherein transverse axis is normalized frequency f, and the longitudinal axis is wave number.
Embodiment：
It is described further by way of example and in conjunction with the accompanying drawings.
The agent structure of the present embodiment includes preceding contact layer 1, preceding electrode 2, three-dimensional silicon substrate micro-nano photonic crystal solar-electricity
Pool structure 3, back electrode 4 and back contact 5；The preceding downside of contact layer 1 made of transparent conductive oxide TCO materials is provided with week
The preceding electrode 2 of phase property arrangement；It is three-dimensional silicon substrate micro-nano photonic crystal solar battery structure 3 between preceding electrode 2 and back electrode 4,
The upper strata of three-dimensional silicon substrate micro-nano photonic crystal solar battery structure 3 is n-type silicon semiconductor layer 6, and lower floor is p-type silicon semiconductor layer
7, n-type silicon semiconductor layer 6 and p-type silicon semiconductor layer 7 form PN junction；N-type silicon semiconductor 6 be with three-dimensional silica base band have forbidden band and
The nano-photon crystal medium post or air pore structure of slow light effect, including forbidden band area scattering member 8, forbidden band area scatter first gap
9th, slower rays area scattering member 10, slower rays area scatter first gap 11 and linear defect wave-guide 12；Formed between adjacent forbidden band area scattering member 8
Forbidden band area scatters first gap 9, and forbidden band area scattering members 8 and forbidden band area more than seven rows scatters first gap 9 and form forbidden band area；Adjacent
Slower rays area is formed between slower rays area scattering member 10 and scatters first gap 11, and preceding electrode 2 is embedded in the bottom of linear defect wave-guide 12, line defect
Respectively there is symmetrical 2-3 rows slower rays area scattering member 10 both sides of waveguide 12；Between the slower rays area scattering member 10 of 1-3 rows, the scattering of slower rays area are first
Gap 11 and linear defect wave-guide 12 form slower rays area；Forbidden band area and slower rays area are periodically alternately arranged in n-type silicon semiconductor 6, n
The space arrangement of type silicon semiconductor 6 is triangular crystal lattice, tetragonal lattice or alveolate texture；P-type silicon semiconductor 7 is that thickness is more than 50
μm single semiconductor structure, p-type silicon semiconductor energy and back electrode 4 form plane；The bottom of back electrode 4 is provided with back contact 5,
The material of the material of back contact 5 and preceding contact layer 1 is identical or different；The back electrode 4 of aluminium laminate structure is arranged on p-type silicon and partly led
The slower rays region or forbidden band region of body layer 7.
Preceding contact layer 1 described in the present embodiment is single slab construction or is and three-dimensional silicon substrate micro-nano photonic crystal solar-electricity
The identical complementary structure of the thickness of pool structure 3；Preceding electrode 2 is lap siding or net like structure, and its concrete structure and three-dimensional silicon substrate are micro-
Photonic crystal solar battery structure 3 of receiving is related.
Forbidden band area scattering member 8 described in the present embodiment and slower rays area scattering member 10 are circular segment, ellipse, crescent or fan
Shape, because the centre frequency of forbidden band may not overlap with the frequency of slower rays, to realize more preferably slower rays effect, forbidden band area scattering member
8 and slower rays area scattering member 10 using different structure scattering member, to adapt to respective normalized frequency；With circular segment or ellipse
Exemplified by scattering member, if the lattice constant of n-type silicon semiconductor 6 is a, parameter b and c represent circular segment respectively or ellipse scattering member is long
The radius of axle and short axle, h are scattering member height, defined parameters e=1-c/b, e value between 0-1 (for dissymmetrical structure,
Because short axle difference e has 2 different values), parameter a, e, h change according to the requirement of forbidden band and slower rays；Forbidden band area is by 9
The forbidden band area scattering member 8 of the row above and forbidden band area scatter first gap 9 and formed, and forbidden band area scattering member 8 is constant or gradual change, symmetrically or not
Symmetrically, can also translate, gradual change and rotation, so that incident light or its component can not have and fall into well to vertically propagating
Light action；Slower rays area scatters member 10 by the slower rays of 1-3 rows, slower rays area scatters first linear defect wave-guide 12 of gap 11 and formed：Slower rays dissipates
Penetrate member 10, slower rays area scatters first gap 11 a variety of changes, linear defect wave-guide 12 is 1-2 times of lattice constant a, realize broadband,
The slow light effect of low dispersion；Slower rays area scattering member 10 is highly minimum, and the thickness of linear defect wave-guide 12 only has 50 μm or so.
Back electrode 4 described in the present embodiment is single thin layer, and the shape of back electrode 4 is identical with the shape of preceding electrode 2,
For lap siding or net like structure.
The operation principle of the present embodiment is：Incident light is radiated at three-dimensional silicon substrate micro-nano photonic crystal too by preceding contact layer 1
On positive energy battery structure 3, the illumination effective area increase of three-dimensional silicon substrate micro-nano photonic crystal solar battery structure 3, and have
Good forbidden band and slow light effect, can fall into light well, can not only effectively carry out opto-electronic conversion, inspire carrier, Er Qiekuan
The directionality and stability of carrier flow can be ensured very well with slow light effect structure；Preceding electrode 2 and back electrode 4 are photovoltaic effect
Carrier form circuit prepare, three-dimensional silicon substrate micro-nano photonic crystal solar battery structure 3 can effectively fall into light, opto-electronic conversion
With reduction Carrier recombination, back contact 5 increases instead, so as to be effectively improved battery efficiency to incident light.
Three-dimensional silicon substrate micro-nano photonic crystal solar battery structure 3 uses commercially available three-dimensional silicon chip described in the present embodiment, its
Micromachining Technology is ripe, and front and rear electrode, front and rear contact layer material are also using conventional commercially available prod.
Embodiment 1：The linear defect wave-guide of triangular crystal lattice arrangement
The overall structure of the present embodiment is as shown in figure 1, Fig. 2 is the three-dimensional silicon substrate micro-nano photonic crystal sun described in the present embodiment
The energy schematic diagram of battery structure 3, wherein n-type silicon semiconductor 6 is to carry forbidden band and the kernel texture periodic arrangement of slow light effect two
Structure：
(1) forbidden band area：The forbidden band area scattering member 8 of n-type silicon semiconductor 6 is using asymmetric first (the structure major axis of ellipse scattering
Identical, short axle is different, and e has 2 different values), space arrangement is triangular crystal lattice structure；The centre wavelength of forbidden band is located at λ
=700nm, can be in the hope of by plane wave expansion method：When the centre wavelength of forbidden band is located at 700nm, the lattice of n-type silicon semiconductor 6
Constant is a=0.31 λ, and forbidden band area scatters major axis parameter b=0.42a, e of member 81=0.36, e2=0.20；Forbidden band area scattering member
For 8 height h at 50 μm -150 μm, its bottom is flat structures, highly in arithmetic progression, with gradually changing for the Chang ⊿ h=2 μm of Bu；
Member is scattered it can be seen from Fig. 2 (1) using asymmetric ellipse；The height of dielectric posts and row it can be seen from Fig. 2 (2)
Row mode；Fig. 3 is the forbidden band figure of n-type silicon semiconductor 6, and the 42.32% of wavelength, thus may be used centered on the forbidden band of n-type silicon semiconductor 6
See the forbidden band of this spline structure not only includes the scope of visible ray in 400~1000nm, this scope, also including sunshine light intensity compared with
Big region；In order to ensure the sunken light effect of forbidden band, forbidden band area scatters member 8 by forbidden band areas more than 9 rows and forbidden band area scatters member
Gap 9 forms, and so that incident light or its component can not be propagated to perpendicular to the direction of nano-pillar (or hole), its length is according to reality
Border needs and die size determines, it is seen then that because employing three-dimensional structure, structure, which falls into light, more preferable effect；
(2) slower rays area：First gap 11 and linear defect wave-guide 12 are scattered including slower rays area scattering member 10, slower rays area；Line defect
Respectively there is symmetrical 2-3 slower rays area scattering member 10 both sides of waveguide 12, in order to which more preferably slower rays effect, slower rays area scattering member 10 use
First 8 smaller structures are scattered than forbidden band area：Parameter a, e of slower rays area scattering member 101、e 2It is identical with forbidden band area scattering member 8,
But major axis parameter is changed into b '=0.30a；Meanwhile in order to realize preferable slow light effect, slower rays area scatters defect waves along member 10
Leading 12 parallel directions totally has a translation, and the distance of translation Jis ⊿ s=a/4 for the half , of lattice constant, the width of defect waveguide 12
It is 1-2 times of first 10 lattice constants of slower rays area scattering；Preceding electrode 2 is located at the middle position of linear defect wave-guide 12, can use copper,
Aluminium or composite, because front and rear electrode distance is nearer, greatly reduce the compound of carrier；
N-type silicon semiconductor 6 is periodically alternately arranged by forbidden band area and slower rays area, and lower floor is that p-type silicon semiconductor 7 is that thickness is big
In 50 μm of single semiconductor structure, back electrode 5 is strip, corresponding with preceding electrode 2, in order to the transmission of carrier.
The operation principle of the present embodiment is：Incident light is by preceding contact layer 1, and almost unreflected to be radiated at three-dimensional silicon substrate micro-
Receive on photonic crystal solar battery structure 3, due to forbidden band and slow light effect, this structure has good light trapping effect, can
Effectively to carry out opto-electronic conversion, carrier is inspired, and slow light effect also assures that the directionality and stably of carrier flow
Property；Preceding electrode 2 and back electrode 4 are then prepared for the carrier composition circuit of photovoltaic effect, and back contact 5 increases instead to incident light,
Further improve battery efficiency；Preceding contact layer 1 and back contact 5 have the function of protection photonic crystal solar cell, figure
3 be the forbidden band figure in forbidden band area, as seen from Figure 3：This is a reactivation band structure, is advantageous to fall into light, in normalized frequency
Between 0.2460--0.3780, structure has larger forbidden band, and it has maximum with respect to forbidden band, is 42.32%；Fig. 4 is slower rays area
Group index figure, take in the range of centre frequency ± 10%, due to optimizing parameter, group index is in the case of 423.3, still
There is good broadband, its new dimensionless scalar product D ' has also just reached 42.33；If further Optimal Parameters, the bandwidth of slower rays
Or new dimensionless scalar product can also increase.
Embodiment 2：The netted linear defect wave-guide of quadrangular array
The overall structure of the present embodiment is identical with Fig. 1, and Fig. 5 is three-dimensional silicon substrate micro-nano photonic crystal solar battery structure 3
Schematic diagram, wherein n-type silicon semiconductor 6 are the structures with forbidden band and the kernel texture periodic arrangement of slow light effect two：
(1) forbidden band area：The forbidden band area scattering member 8 of n-type silicon semiconductor 6 is using symmetrical circular segment scattering member, space arrangement
For the symmetrical structure of four side lattices；The centre wavelength of forbidden band is located at λ=700nm, can be in the hope of by plane wave expansion method：Forbidden band
Centre wavelength when being located at 700nm, the lattice constant of n-type silicon semiconductor 6 is a=0.29 λ, the major axis ginseng of forbidden band area scattering member 8
Number b=0.40a, e=0.28；Forbidden band area 8 height h of scattering member are 50 μm -150 μm, and its bottom is flat structures, highly by layer
Number from inside to outside, is gradually successively decreased with the Chang ⊿ h=2 μm of Bu；Member is scattered it can be seen from Fig. 5 (1) using of different sizes
Symmetrical circular segment；The height and arrangement mode of dielectric posts it can be seen from Fig. 5 (2), both as pyramid structure, there is scattering member again
Deflection；Fig. 6 is the forbidden band figure of structure, and because the forbidden band of structure is the 38.68% of centre wavelength, the forbidden band of structure and sunken light have
Preferable effect, this is a reactivation band structure, is advantageous to fall into light, between normalized frequency 0.2270--0.3346, structure
There is larger forbidden band, it has maximum with respect to forbidden band, is 38.68%；In order to ensure the sunken light effect of forbidden band, the taboo of each grid
Zone scatters member 8 by forbidden band area more than 9*9 rows and forbidden band area scatters first gap 9 and formed, so that incident light or its component can not
Propagated to perpendicular to the direction of nano-pillar (or hole), the length of structure can determine according to being actually needed with die size.
(2) slower rays area：First gap 11, and linear defect wave-guide 12 are scattered including slower rays area scattering member 10, slower rays area, line lacks
Trap, which leads 12 both sides, respectively symmetrical 2-3 slower rays area scattering member 10, and for the ease of designing and processing, slower rays area scattering member 10 uses
First 8 identical structures are scattered with forbidden band area；Because the centre frequency of forbidden band and the frequency of slower rays are misaligned, in order to more preferably slow
Light effect, slower rays scattering member 10 and the forbidden band area scattering member 8 in slower rays area are slightly different：Parameter a, e of scattering member 10 is the same as scattering member 8
It is identical, but major axis parameter is changed into b '=0.23a, meanwhile, in order to realize preferable slow light effect, the major axis of slower rays area scattering member 10
It is no longer parallel with the parallel direction of linear defect wave-guide 12, but with linear defect wave-guide into 30 ° of angles to 60 ° of deflection, defect waveguide 12
Width be 1-2 times of lattice constant；Preceding electrode 2 is located at the middle position of linear defect wave-guide 12, can use copper, aluminium or compound
Material, because front and rear electrode distance is nearer, greatly reduce the compound of carrier.
N-type silicon semiconductor 6 is periodically alternately arranged by forbidden band area and slower rays area, and p-type silicon semiconductor 7 is that thickness is more than 50 μm
Single semiconductor structure, back electrode 4 is corresponding with preceding electrode 2 to be latticed, referring to Fig. 5, in order to the transmission of carrier.
The operation principle of the present embodiment is：Incident light is by preceding contact layer 1, and almost unreflected to be radiated at three-dimensional silicon substrate micro-
Receive on photonic crystal solar battery structure 3, due to forbidden band and slow light effect, this structure has good light trapping effect, can
Effectively to carry out opto-electronic conversion, carrier is inspired, and slow light effect also assures that the directionality and stably of carrier flow
Property；Preceding electrode 2 and back electrode 4, then to be prepared for the carrier composition circuit of photovoltaic effect, back contact 5 increases instead to incident light,
Further improve battery efficiency；Preceding contact layer 1 and back contact 5 have the function of protection photonic crystal solar cell.
The forbidden band figure in forbidden band area described in the present embodiment is as shown in fig. 6, as seen from Figure 6, this is a reactivation band structure, favorably
In sunken light, between normalized frequency 0.2460--0.3780, structure has larger forbidden band, and it has maximum with respect to forbidden band, is
38.68%；Fig. 7 is the group index figure in slower rays area, is taken in the range of centre frequency ± 10%, when scattering member deflects 30 °, group's folding
Rate is penetrated in the case of 462.8, still there is good broadband, its new dimensionless scalar product D ' has also just reached 46.28；If enter one
Optimal Parameters are walked, the bandwidth of slower rays or new dimensionless scalar product also can further increase.
Claims (4)
1. a kind of three-dimensional silicon substrate micro-nano photonic crystal solar cell, it is characterised in that agent structure includes preceding contact layer, preceding electricity
Pole, three-dimensional silicon substrate micro-nano photonic crystal solar battery structure, back electrode and back contact；Transparent conductive oxide TCO materials
Manufactured preceding contact layer downside is provided with the preceding electrode of periodic arrangement；It is three-dimensional silicon substrate micro-nano between preceding electrode and back electrode
Photonic crystal solar battery structure, the upper strata of three-dimensional silicon substrate micro-nano photonic crystal solar battery structure is n-type silicon semiconductor
Layer, lower floor are p-type silicon semiconductor layer, and n-type silicon semiconductor layer and p-type silicon semiconductor layer form PN junction；N-type silicon semiconductor be with
Three-dimensional silica base band has a nano-photon crystal medium post or air pore structure of forbidden band and slow light effect, including forbidden band area scattering member,
Forbidden band area scatters first gap, slower rays area scattering member, the first gap of slower rays area scattering and linear defect wave-guide；Adjacent forbidden band area scattering member
Between form forbidden band area and scatter first gap, forbidden band area scattering members and forbidden band area more than seven rows scatters first gap composition forbidden band area；
Slower rays area is formed between adjacent slower rays area scattering member and scatters first gap, and preceding electrode is embedded in linear defect wave-guide bottom, line defect
Respectively there is symmetrical 1-3 rows slower rays area scattering member waveguide both sides；The slower rays area scattering member of 1-3 rows, slower rays area scatter first gap and line
Defect waveguide composition slower rays area；Forbidden band area and slower rays area are periodically alternately arranged in n-type silicon semiconductor, n-type silicon semiconductor
Space arrangement is triangular crystal lattice, tetragonal lattice or alveolate texture；P-type silicon semiconductor is the single semiconductor that thickness is more than 50 μm
Structure, p-type silicon semiconductor energy form plane with back electrode；The bottom of back electrode is provided with back contact, the material of back contact with
The material of preceding contact layer is identical or different；The back electrode of aluminium laminate structure is arranged on slower rays region or the taboo of p-type silicon semiconductor layer
Region.
2. three-dimensional silicon substrate micro-nano photonic crystal solar cell according to claim 1, it is characterised in that the preceding contact layer
Structure for single slab construction or for the complementation that coincide with three-dimensional silicon substrate micro-nano photonic crystal solar battery structure thickness；Preceding electricity
Extremely lap siding or net like structure, its concrete structure are related to three-dimensional silicon substrate micro-nano photonic crystal solar battery structure.
3. three-dimensional silicon substrate micro-nano photonic crystal solar cell according to claim 1, it is characterised in that the forbidden band area dissipates
It is circular segment, ellipse, crescent or sector to penetrate member and slower rays area scattering member, and forbidden band area scattering member and slower rays area scattering member use
The scattering member of different structure, to adapt to respective normalized frequency.
4. three-dimensional silicon substrate micro-nano photonic crystal solar cell according to claim 1, it is characterised in that the back electrode is
Single thin layer, the shape of back electrode is identical with the shape of preceding electrode, is lap siding or net like structure.
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| US20090217971A1 (en) * | 2008-02-29 | 2009-09-03 | International Business Machines Corporation | Photovoltaic Devices with Enhanced Efficiencies Using High-Aspect-Ratio Nanostructures |
| CN102074601A (en) * | 2010-11-30 | 2011-05-25 | 南京理工大学 | Solar cell with surface combined grating structure |
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